CN201473323U - Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field - Google Patents
Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field Download PDFInfo
- Publication number
- CN201473323U CN201473323U CN2009202329855U CN200920232985U CN201473323U CN 201473323 U CN201473323 U CN 201473323U CN 2009202329855 U CN2009202329855 U CN 2009202329855U CN 200920232985 U CN200920232985 U CN 200920232985U CN 201473323 U CN201473323 U CN 201473323U
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- thermal insulation
- base plate
- cage
- polycrystalline silicon
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Abstract
The utility model discloses a polycrystalline silicon ingot production furnace capable of effectively controlling a thermal field, which is provided with a furnace body. A heat-insulated cage is arranged in the furnace body; a charging crucible is arranged on a bearing platform at the bottom of the heat-insulated cage; an upper heater and a lower heater are arranged in the heat-insulated cage which is provided with a peripheral cage body, an upper cover and a base plate; an upper heating body is fixed with the upper cover of the heat-insulated cage; a lower heating body is arranged between the bearing platform and the base plate of the heat-insulated cage; a heat door is arranged in the middle part of the base plate of the heat-insulated cage; a cooling plate is arranged below the heat door; the middle part of the base plate of the heat-insulated cage is provided with a temperature gradient field control port; the heat door is arranged at the temperature gradient field control port; a horizontal draw channel of the heat door is arranged on the side part of the temperature gradient field control port; and the heat door is fixedly connected with a pull rod arranged on the furnace body. The heat door adopts a single-door or double-door structure and the opening mode adopts a longitudinal draw structure, so not only the process time can be shortened and high-quality silicon ingots can be produced, but also the energy consumption in the crystallization process can be reduced. The utility model has reasonable design and simple operation and can improve the growth quality of polycrystalline silicon.
Description
Technical field
The utility model relates to a kind of production unit that is used to produce the base mateiral of solar level battery, particularly a kind of polycrystalline silicon ingot or purifying furnace of effective control thermal field.
Background technology
Sun power is human inexhaustible renewable energy source, also is clean energy, and solar cell is exactly to utilize photovoltaic effectiveness sun power directly to be converted to a kind of device of electric energy.Making solar cell mainly is based on silicon materials, by the directional freeze ingot casting, have stable efficiency of conversion, and the ratio of performance to price is the highest, will satisfy silico briquette section encapsulation process and become the finished product.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon melting equipment, is to produce the peculiar visual plant of big specification solar level cell polysilicon ingot.In the production, will meet the requirements of polycrystalline silicon material and pack in the stove, come out of the stove by vacuum, heating, fusing, long brilliant, annealing, cooling.Unmelted polycrystalline silicon, long crystalline substance, the such core environment of annealing become thermal field.Open popularly when long brilliant earlier, forms a vertical thermograde, popular unlatching opportunity and mode play crucial effects to the quality and the whole long crystalline substance time of the silicon ingot produced.
Summary of the invention
The technical problems to be solved in the utility model is at the deficiencies in the prior art, has proposed a kind of polycrystalline silicon ingot or purifying furnace of reasonable in design, simple to operate, effective control thermal field that can improve the polycrystalline silicon growth quality.
The technical problems to be solved in the utility model is achieved through the following technical solutions, a kind of polycrystalline silicon ingot or purifying furnace of effective control thermal field, be provided with body of heater, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, in Thermal insulation cage, be provided with upper heater and following well heater, cage body around Thermal insulation cage is provided with, loam cake and base plate, the loam cake of last heating member and Thermal insulation cage is fixed, following heating member is arranged between the base plate of accepting platform and Thermal insulation cage, middle part at the base plate of Thermal insulation cage is provided with hot topic, be provided with cooling plate below hot topic, be characterized in: have temperature gradient field control mouth at the middle part of Thermal insulation cage base plate, described hot topic is contained in temperature gradient field control mouthful place, sidepiece at temperature gradient field control mouth is provided with popular horizontal pull passage, and hot topic is fixedlyed connected with the pull bar on being contained in body of heater.
The technical problems to be solved in the utility model can also come to realize that further described pull bar and feed screw nut's driving mechanism join by the following technical programs.
The technical problems to be solved in the utility model can also come to realize that further described hot topic is provided with symmetrical two by the following technical programs.
The technical problems to be solved in the utility model can also come further to realize by the following technical programs, the described popular graphite felt material manufacturing of adopting.
The utility model compared with prior art, heat insulation bottom board contains hot topic, and cooling plate is arranged under the hot topic, makes after hot topic is opened in the chamber to form with individual vertical and stable temperature gradient field.Popular simple gate or the two-door structure of adopting, unfolding mode adopts vertical drawing structure, can not only shorten the process time, produces high-quality silicon ingot, and reduces the energy consumption of crystallisation process.It is reasonable in design, simple to operate, can improve the polycrystalline silicon growth quality.
Description of drawings
Fig. 1 is for singly opening popular structure diagram.
Fig. 2 is two structure diagrams of opening hot topic.
Embodiment
A kind of polycrystalline silicon ingot or purifying furnace of effective control thermal field, be provided with body of heater 1, be provided with Thermal insulation cage in the body of heater 1, charging crucible 5 is placed on accepting on the platform 6 of Thermal insulation cage bottom, in Thermal insulation cage, be provided with upper heater 2 and following well heater 7, cage body 4 around Thermal insulation cage is provided with, loam cake 3 and base plate 8, last heating member 2 is fixing with the loam cake 3 of Thermal insulation cage, following heating member 7 is arranged between the base plate 8 of accepting platform 6 and Thermal insulation cage, be provided with popular 10 at the middle part of the base plate 8 of Thermal insulation cage, below popular 10, be provided with cooling plate 9, have temperature gradient field control mouth at the middle part of Thermal insulation cage base plate 8, popular 10 are contained in temperature gradient field control mouthful place, described popular 10 adopt simple gate or two-door structure, unfolding mode adopts vertical drawing structure, and the side direction of controlling mouth at temperature gradient field is provided with popular horizontal pull passage, and hot topic 10 is fixedlyed connected with the pull bar 12 on being contained in body of heater.Popular employing graphite felt material is made.
Described pull bar 12 joins with feed screw nut's driving mechanism 13.Motor moves by screw mandrel drive pull bar 12 and realizes opening or closing hot topic, is provided with guide wheel 11 as supplemental support in the bottom of pull bar 12.
Claims (4)
1. effective polycrystalline silicon ingot or purifying furnace of control thermal field, be provided with body of heater, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, in Thermal insulation cage, be provided with upper heater and following well heater, cage body around Thermal insulation cage is provided with, loam cake and base plate, the loam cake of last heating member and Thermal insulation cage is fixed, following heating member is arranged between the base plate of accepting platform and Thermal insulation cage, middle part at the base plate of Thermal insulation cage is provided with hot topic, below hot topic, be provided with cooling plate, it is characterized in that: have temperature gradient field control mouth at the middle part of Thermal insulation cage base plate, described hot topic is contained in temperature gradient field and controls a mouthful place, and the sidepiece of controlling mouth at temperature gradient field is provided with popular horizontal pull passage, and hot topic is fixedlyed connected with the pull bar on being contained in body of heater.
2. the polycrystalline silicon ingot or purifying furnace of effective control thermal field according to claim 1 is characterized in that: described pull bar and feed screw nut's driving mechanism join.
3. the polycrystalline silicon ingot or purifying furnace of effective control thermal field according to claim 1 is characterized in that: described hot topic is provided with symmetrical two.
4. according to the polycrystalline silicon ingot or purifying furnace of claim 1 or 3 described effective control thermal fields, it is characterized in that: the described popular graphite felt material manufacturing of adopting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202329855U CN201473323U (en) | 2009-07-27 | 2009-07-27 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202329855U CN201473323U (en) | 2009-07-27 | 2009-07-27 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201473323U true CN201473323U (en) | 2010-05-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009202329855U Expired - Fee Related CN201473323U (en) | 2009-07-27 | 2009-07-27 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
Country Status (1)
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| CN (1) | CN201473323U (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN102051679A (en) * | 2010-12-29 | 2011-05-11 | 浙江昱辉阳光能源有限公司 | Hot door and polycrystalline ingot furnace |
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN102828228A (en) * | 2011-06-16 | 2012-12-19 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN102899720A (en) * | 2012-09-28 | 2013-01-30 | 东海晶澳太阳能科技有限公司 | Ingot casting method for efficient polycrystalline silicon |
| CN102912412A (en) * | 2012-06-01 | 2013-02-06 | 沈阳森之洋光伏科技有限公司 | Method and device for cooling polysilicon ingot furnace |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN103290473A (en) * | 2012-02-28 | 2013-09-11 | 三菱综合材料株式会社 | Quartz crucible, production method of the same, and casting apparatus |
| CN103409790A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103422165A (en) * | 2013-07-22 | 2013-12-04 | 湖南红太阳光电科技有限公司 | Polycrystalline silicon and preparation method thereof |
| CN103526286A (en) * | 2012-07-02 | 2014-01-22 | 浙江宏业新能源有限公司 | Precise temperature adjustment device of polycrystalline ingot furnace |
| CN109208067A (en) * | 2017-07-05 | 2019-01-15 | 奥特斯维能源（太仓）有限公司 | A kind of quasi- monocrystalline ingot casting heating thermal field structure |
-
2009
- 2009-07-27 CN CN2009202329855U patent/CN201473323U/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051679A (en) * | 2010-12-29 | 2011-05-11 | 浙江昱辉阳光能源有限公司 | Hot door and polycrystalline ingot furnace |
| CN102051679B (en) * | 2010-12-29 | 2012-12-05 | 浙江昱辉阳光能源有限公司 | Hot door and polycrystalline ingot furnace |
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN102828228B (en) * | 2011-06-16 | 2015-07-08 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN102828228A (en) * | 2011-06-16 | 2012-12-19 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN103290473A (en) * | 2012-02-28 | 2013-09-11 | 三菱综合材料株式会社 | Quartz crucible, production method of the same, and casting apparatus |
| CN102912412A (en) * | 2012-06-01 | 2013-02-06 | 沈阳森之洋光伏科技有限公司 | Method and device for cooling polysilicon ingot furnace |
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN102912412B (en) * | 2012-06-01 | 2016-09-21 | 沈阳森之洋自动化科技有限公司 | A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller |
| CN103526286A (en) * | 2012-07-02 | 2014-01-22 | 浙江宏业新能源有限公司 | Precise temperature adjustment device of polycrystalline ingot furnace |
| CN102899720A (en) * | 2012-09-28 | 2013-01-30 | 东海晶澳太阳能科技有限公司 | Ingot casting method for efficient polycrystalline silicon |
| CN102899720B (en) * | 2012-09-28 | 2015-06-10 | 东海晶澳太阳能科技有限公司 | Ingot casting method for efficient polycrystalline silicon |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN102978697B (en) * | 2012-11-29 | 2016-03-23 | 杭州精功机电研究所有限公司 | A kind of crystal silicon ingot furnace moves act door gear and control method thereof |
| CN103422165A (en) * | 2013-07-22 | 2013-12-04 | 湖南红太阳光电科技有限公司 | Polycrystalline silicon and preparation method thereof |
| CN103409790A (en) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | Lower heater lifting mechanism of pseudo-single crystal silicon ingot furnace |
| CN103409790B (en) * | 2013-08-01 | 2016-02-03 | 安徽大晟新能源设备科技有限公司 | The lower well heater hoisting appliance of accurate single-crystal ingot casting furnace |
| CN109208067A (en) * | 2017-07-05 | 2019-01-15 | 奥特斯维能源（太仓）有限公司 | A kind of quasi- monocrystalline ingot casting heating thermal field structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100519 Termination date: 20110727 |