CN102021646A - Thermal field structure of polycrystalline silicon crystal growing furnace - Google Patents
Thermal field structure of polycrystalline silicon crystal growing furnace Download PDFInfo
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- CN102021646A CN102021646A CN2011100027072A CN201110002707A CN102021646A CN 102021646 A CN102021646 A CN 102021646A CN 2011100027072 A CN2011100027072 A CN 2011100027072A CN 201110002707 A CN201110002707 A CN 201110002707A CN 102021646 A CN102021646 A CN 102021646A
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Abstract
The invention relates to a thermal field structure of a polycrystalline silicon crystal growing furnace, which comprises a fixed thermal-preserving screen formed by an upper thermal-preserving screen, a side thermal-preserving screen and a thermal-preserving baseboard, wherein a crystal growing element, a crucible and a heater are arranged in the fixed thermal-preserving screen; a thermal door is arranged on the lower part of the thermal-preserving baseboard; a heat exchanger is connected to the lower part of the thermal door; and a thermal door starting device is connected to the thermal door. The structure of the invention forms a one-way vertical temperature gradient by controlling the temperature change of the thermal field through the opening degree of the thermal door, directionally grows columnar crystal, efficiently reduces the energy exchange of the cold and thermal energy around the melt silicon, reduces the thermal energy loss, and is beneficial to grow crystal along one direction so as to increase the growing quality of the crystal and shorten the growing period of the crystal.
Description
Technical field
The present invention relates to a kind of novel polysilicon crystal growing furnace thermal field structure, belong to photovoltaic equipment manufacturing technology field.
Background technology
The polysilicon crystal growing furnace is that the silicon raw material is made the silicon directional freeze through technologies such as heating, long crystalline substance, annealing, forms unidirectional hot-fluid by the temperature variation of controlling thermal field, thereby forms directed styloid.The directional solidification growth method that at home and abroad generally adopts is a heat-exchanging method at present.Realize that heat-exchanging method mainly contains two kinds of structures, a kind of is to heat around thermal field adopts or heat simultaneously with the top all around, when crystal orientation solidifies beginning, by moving up of heat protection screen, long brilliant device bottom begins cooling, make silicon melt body and form upwards growth of crystal, this growth method causes heat energy loss bigger when heat protection screen is opened, and thermo-efficiency is not high.Another kind of thermal field is to adopt top and bottom heater, when crystal orientation solidifies beginning, bottom heater power strengthens (sharply descending to reduce temperature of lower), hot topic is all opened fast simultaneously, this growth method causes heat energy loss bigger when hot topic is all opened equally, and can't form long brilliant hot wall effect, be unfavorable for that silicon melts the inside impurities removal of body.
Summary of the invention
The technical problem to be solved in the present invention is at the deficiencies in the prior art, has proposed a kind of heat energy loss that reduced, and helps the crystal unidirectional growth simultaneously, thereby improves the crystalline growth quality, shortens the polysilicon crystal growing furnace thermal field structure in crystal growth cycle.
The technical problem to be solved in the present invention is achieved through the following technical solutions.A kind of polysilicon crystal growing furnace thermal field structure, it comprises the fixedly heat protection screen that is made of last guarantor's heat shielding, side heat protection screen and insulation base plate, fixedly is being provided with long brilliant device, crucible and well heater in the heat protection screen; Be characterized in: the bottom at the insulation base plate is provided with hot topic, is connected with heat exchanger in popular bottom, also is connected with popular opening device on the hot topic.
It is popular that popular opening device of the present invention is used to open, and therefore, anyly in the prior art can be used to open popular device and all can be used for the present invention.Preferred use popular opening device disclosed in this invention.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described hot topic is symmetrical arranged by some door bodies, and every Men Tijun is connected with popular opening device.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described hot topic is centrosymmetric by 4 door bodies and is located at the bottom of insulation base plate.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described hot topic is the bottom that left-right symmetry is located at the insulation base plate by 2 door bodies.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described popular opening device comprises and is connected an electric pushrod on the door body that electric pushrod is connected with another piece door body by interlinkage.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: be provided with thermal insulation layer around the described heat exchanger, be provided with cooling water pipeline in heat exchanger inside, also be provided with the water inlet pipe and the rising pipe that are communicated with cooling water pipeline on heat exchanger.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described well heater be located at crucible around, perhaps be located at crucible around and the top.Described well heater can adopt that disclosed any type of heating heats in the prior art.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure, be characterized in: described popular opening device comprises motor, motor is connected with rotating shaft by transmission rig, be connected with crank and guide rail in the rotating shaft, guide rail is provided with link pin, crank is connected with connecting rod, and connecting rod and hot topic are connected on the link pin.
The technical problem to be solved in the present invention can also come further to realize by the following technical programs.Above-described polysilicon crystal growing furnace thermal field structure is characterized in: described popular opening device is the electric pushrod that is connected on the hot topic.
When the present invention uses, adopt fixedly heat protection screen insulation, use well heater, the silicon material is heated with well heater to the heating of silicon material, control the temperature variation of thermal field by the adjusting of popular aperture size, make the silicon material that is dissolved form the convex solid-liquid interface and realize long crystalline substance, carry out the oriented growth styloid, reduce the silicon melt energy exchange of cold and hot amount all around effectively, reduced heat energy loss, help the crystal unidirectional growth simultaneously, thereby improve the crystalline growth quality, shorten the crystal growth cycle.Because heat protection screen is the fixed closed structure, popular in the process of opening simultaneously, heat around the crucible and the heat around the bottom do not carry out heat exchange, thereby have reduced heat energy loss, have shortened the crystal growth cycle.
Description of drawings
Fig. 1 is a kind of structural representation of the present invention (a popular open mode).
Fig. 2 is an another kind of structural representation of the present invention.
Fig. 3 is another structural representation of the present invention.
Fig. 4 is another structural representation of the present invention.
Embodiment
Following with reference to accompanying drawing, further describe concrete technical scheme of the present invention, so that those skilled in the art understands the present invention further.Embodiment of the present invention is exemplary, and following embodiment only is used to explain the present invention, and can not be used for limitation of the present invention.
Embodiment 1.With reference to Fig. 1.A kind of novel polysilicon crystal growing furnace thermal field structure, it comprises the fixedly heat protection screen that is made of last guarantor's heat shielding 7, side heat protection screen 9 and insulation base plate 11, fixedly is being provided with long brilliant device 10, crucible 5 and well heater (4,6) in the heat protection screen; Bottom at insulation base plate 11 is provided with hot topic 2, is connected with heat exchanger 1 in popular 2 bottoms, also is connected with popular opening device on the hot topic 2.
This New Polycrystalline silicon crystal growth oven thermal field structure is under heating cycle, and well heater (4,6) requires to heat according to production formula, and popular 2 are in closing condition; Under long brilliant operating mode, hot topic 2 requires to open gradually according to production formula by popular opening device, starts heat exchanger 1, and the heat of long brilliant device 10 bottoms is taken away, and form silicon and melt the required thermograde of body, thus realization crystalline unidirectional growth.
The input and output material of silicon ingot can be undertaken by two kinds of modes up and down: a kind of is top input and output material method, opens fixedly heat protection screen by the hanger 8 that connects on the last heat protection screen 7, and well heater (4,6) moves together, and silicon ingot is taken out.Another kind is a bottom input and output material method, by decline crucible 5, long brilliant device 10, insulation base plate 11, hot topic 2, silicon ingot is taken out.
Embodiment 2.With reference to Fig. 1-4.In the embodiment 1 described polysilicon crystal growing furnace thermal field structure: described popular 2 are symmetrical arranged by some door bodies, and every Men Tijun is connected with popular opening device.
Embodiment 3.With reference to Fig. 1.In the embodiment 2 described polysilicon crystal growing furnace thermal field structures: described popular 2 by 4 door bodies be centrosymmetric be located at the insulation base plate 11 the bottom.
Embodiment 4.With reference to Fig. 2-4.In the embodiment 2 described polysilicon crystal growing furnace thermal field structures: described popular 2 are left-right symmetry by 2 door bodies is located at the bottom that is incubated base plate 11.
Embodiment 5.With reference to Fig. 3.In the embodiment 4 described polysilicon crystal growing furnace thermal field structures: described popular opening device comprises and is connected an electric pushrod 21 on the door body that electric pushrod 21 is connected with another piece door body by interlinkage 20.
Embodiment 6.With reference to Fig. 1-4.In any one described polysilicon crystal growing furnace thermal field structure of embodiment 1-5: be provided with thermal insulation layer 12 around the described heat exchanger 1, be provided with cooling water pipeline in heat exchanger 1 inside, on heat exchanger 1, also be provided with the water inlet pipe 16 and the rising pipe 18 that are communicated with cooling water pipeline.
Embodiment 7.With reference to Fig. 1-4.In any one described polysilicon crystal growing furnace thermal field structure of embodiment 1-6: described well heater (4,6) be located at crucible 5 around, perhaps be located at crucible 5 around and the top.
Embodiment 8.With reference to Fig. 1-2.In any one described polysilicon crystal growing furnace thermal field structure of embodiment 1-4,6-7: described popular opening device comprises motor 19, motor 19 is connected with rotating shaft 17 by transmission rig, be connected with crank 15 and guide rail 3 in the rotating shaft 17, guide rail 3 is provided with link pin 13, crank 15 is connected with connecting rod 14, and connecting rod 14 is connected on the link pin 13 with popular 2.
Embodiment 9.With reference to Fig. 3-4.In any one described polysilicon crystal growing furnace thermal field structure of embodiment 1-4,6-7: described popular opening device is the electric pushrod 21 that is connected on popular 2.
Claims (9)
1. polysilicon crystal growing furnace thermal field structure, it comprises the fixedly heat protection screen that is made of last guarantor's heat shielding, side heat protection screen and insulation base plate, is being provided with in fixing heat protection screen and is growing brilliant device, crucible and well heater; It is characterized in that: the bottom at the insulation base plate is provided with hot topic, is connected with heat exchanger in popular bottom, also is connected with popular opening device on the hot topic.
2. polysilicon crystal growing furnace thermal field structure according to claim 1 is characterized in that: described hot topic is symmetrical arranged by some door bodies, and every Men Tijun is connected with popular opening device.
3. polysilicon crystal growing furnace thermal field structure according to claim 2 is characterized in that: described hot topic is centrosymmetric by 4 door bodies and is located at the bottom of insulation base plate.
4. polysilicon crystal growing furnace thermal field structure according to claim 2 is characterized in that: described hot topic is the bottom that left-right symmetry is located at the insulation base plate by 2 door bodies.
5. polysilicon crystal growing furnace thermal field structure according to claim 4 is characterized in that: described popular opening device comprises and is connected an electric pushrod on the door body that electric pushrod is connected with another piece door body by interlinkage.
6. polysilicon crystal growing furnace thermal field structure according to claim 1, it is characterized in that: be provided with thermal insulation layer around the described heat exchanger, be provided with cooling water pipeline in heat exchanger inside, on heat exchanger, also be provided with the water inlet pipe and the rising pipe that are communicated with cooling water pipeline.
7. polysilicon crystal growing furnace thermal field structure according to claim 1 is characterized in that: described well heater be located at crucible around, perhaps be located at crucible around and the top.
8. according to any one described polysilicon crystal growing furnace thermal field structure of claim 1-4,6-7, it is characterized in that: described popular opening device comprises motor, motor is connected with rotating shaft by transmission rig, be connected with crank and guide rail in the rotating shaft, guide rail is provided with link pin, crank is connected with connecting rod, and connecting rod and hot topic are connected on the link pin.
9. according to any one described polysilicon crystal growing furnace thermal field structure of claim 1-4,6-7, it is characterized in that: described popular opening device is the electric pushrod that is connected on the hot topic.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330144A (en) * | 2011-10-08 | 2012-01-25 | 陕西合木实业有限公司 | Preparation method and equipment of finished product large area seed crystal and rectangle large area seed crystal |
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN102912412A (en) * | 2012-06-01 | 2013-02-06 | 沈阳森之洋光伏科技有限公司 | Method and device for cooling polysilicon ingot furnace |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN103205807A (en) * | 2011-12-28 | 2013-07-17 | 江苏有能光电科技有限公司 | Ingot furnace for preparing quasi-monocrystalline silicon and method of preparing quasi-monocrystalline silicon |
| CN103827031A (en) * | 2011-09-14 | 2014-05-28 | Memc新加坡私人有限公司 | Multi-crystalline silicon ingot and directional solidification furnace |
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| CN201473323U (en) * | 2009-07-27 | 2010-05-19 | 管悦 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
| CN202030854U (en) * | 2011-01-07 | 2011-11-09 | 管文礼 | Heat field structure of polycrystalline silicon crystal growing furnace |
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| CN101305116A (en) * | 2005-08-25 | 2008-11-12 | 晶体系统公司 | System and method for crystal growing |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103827031A (en) * | 2011-09-14 | 2014-05-28 | Memc新加坡私人有限公司 | Multi-crystalline silicon ingot and directional solidification furnace |
| CN102330144A (en) * | 2011-10-08 | 2012-01-25 | 陕西合木实业有限公司 | Preparation method and equipment of finished product large area seed crystal and rectangle large area seed crystal |
| CN103205807A (en) * | 2011-12-28 | 2013-07-17 | 江苏有能光电科技有限公司 | Ingot furnace for preparing quasi-monocrystalline silicon and method of preparing quasi-monocrystalline silicon |
| CN102732961A (en) * | 2012-06-01 | 2012-10-17 | 沈阳森之洋光伏科技有限公司 | Cooling method and cooling apparatus of polysilicon ingot furnace |
| CN102912412A (en) * | 2012-06-01 | 2013-02-06 | 沈阳森之洋光伏科技有限公司 | Method and device for cooling polysilicon ingot furnace |
| CN102912412B (en) * | 2012-06-01 | 2016-09-21 | 沈阳森之洋自动化科技有限公司 | A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller |
| CN102978697A (en) * | 2012-11-29 | 2013-03-20 | 杭州精功机电研究所有限公司 | Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| CN102978697B (en) * | 2012-11-29 | 2016-03-23 | 杭州精功机电研究所有限公司 | A kind of crystal silicon ingot furnace moves act door gear and control method thereof |
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Application publication date: 20110420 |