CN102912412B - A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller - Google Patents
A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller Download PDFInfo
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- CN102912412B CN102912412B CN201210177335.1A CN201210177335A CN102912412B CN 102912412 B CN102912412 B CN 102912412B CN 201210177335 A CN201210177335 A CN 201210177335A CN 102912412 B CN102912412 B CN 102912412B
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Abstract
The present invention discloses a kind of method realizing polycrystalline silicon ingot or purifying furnace cooling, ingot furnace based on existing structure, the heat-insulation cage structure in ingot furnace is improved；The first step, first increases by a Heat-insulation device in the heat-insulation cage of ingot furnace, will form two chambers closed in heat-insulation cage；Second step, is provided with upper heater, crucible and lower heater the most wherein in upper chamber, by closing Heat-insulation device, start upper heater and lower heater heats simultaneously, make the melting silicon materials in crucible；3rd step, is provided with heat-exchanger rig below Heat-insulation device；4th step, the size controlling Heat-insulation device opening controls air conditioning quantity, controls crystal silicon homoepitaxial.This cooling means passes through insulated door, separates cold and hot in stove dexterously；The method, by controlling the power of upper and lower heater, forms upper and lower thermograde, controls ventilation by the every layer of size that can control opening opening insulated door, controls rate of cooling；The method simple in construction, easy to operate.
Description
Technical field
The present invention relates to technical field of polysilicon production, particularly relate to one and realize polycrystalline silicon ingot casting
The method of stove cooling and chiller.
Background technology
In prior art, solar panel mainly uses polysilicon to make, but the system of polysilicon
It is first in ingot furnace, polycrystalline silicon raw material to be added heat fusing as process, then to polycrystalline in crucible
Silicon raw material carries out lowering the temperature, cooled and solidified forms polycrystal silicon ingot.Above-mentioned technology produces polycrystal silicon ingot,
Mainly include following several stages: fusing, crystallographic orientation, anneal, cool down.
Cooling down mostly important in the growth course of polycrystal silicon ingot, many employings are by regulation heater
Power, the contact distance of regulation Base Heat board is lowered the temperature, in order to control silicon ingot growth speed
Degree and the direction of growth.
Also with by arranging circulation coil pipe refrigerating plant in crucible bottom, when crucible heating terminates
After, actively crucible bottom is begun to cool down by starting refrigerating plant circulating refrigerant.Above-mentioned refrigeration
The cooling position of the most uncontrollable crucible in mode, the growth of polysilicon in the most uncontrollable crucible
Direction, with the uniformity of polysilicon can not be controlled, the polycrystal silicon ingot poor quality produced, useless
Material is many, and productivity ratio is low.Existing ingot furnace is as it is shown in figure 1, Application No.: 201010176628.9
Chinese patent, specifically disclosed is the crystal silicon ingot furnace of double-cavity heat-insulation cage.
But the cooling means of a kind of polycrystalline silicon ingot or purifying furnace being provided with Heat-insulation device and chiller
There is not yet report.
Summary of the invention
For solving existing technical problem, it is an object of the invention to provide a kind of energy output high-quality
The method realizing polycrystalline silicon ingot or purifying furnace cooling of polycrystal silicon ingot and chiller.
The technical solution used in the present invention is for achieving the above object:
A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling, ingot furnace based on existing structure, will
Heat-insulation cage structure in ingot furnace improves；
The first step, first increases by a Heat-insulation device, by heat-insulation cage in the heat-insulation cage of ingot furnace
Form two chambers closed；
Second step, is provided with upper heater, crucible and lower heater the most wherein in upper chamber,
By closing Heat-insulation device, start upper heater and lower heater heats, in making crucible simultaneously
Melting silicon materials；
3rd step, is provided with heat-exchanger rig below Heat-insulation device；
4th step, the size controlling Heat-insulation device opening controls air conditioning quantity, controls crystal silicon uniform
Growth.
Heat-insulation device in the above-mentioned first step is two or more temperature separation door, by each every
Temperature gate layer is folded to be arranged.
When in the above-mentioned first step, Heat-insulation device is two-layer temperature separation door, ground floor temperature separation door is set to
Totally-enclosed temperature separation door, is set to the temperature separation door of intermediate openings by second layer temperature separation door；
In the above-mentioned first step, Heat-insulation device is according to the raw material requirement to lowering temperature uniform degree after fusing, will
Temperature separation door is set to N shell door；Ground floor door is totally enclosed, by the second layer ~ n-th layer thermal insulation
Door is set as intermediate openings；When temperature separation door is N shell, the opening on n-th layer temperature separation door is set
Degree is more than the opening degree on N-1 temperature separation door；Wherein N 3, N is integer.
After described ground floor temperature separation door is opened, it is formed there through at the intermediate openings of remaining temperature separation door
Inverted pyramid shape.
A kind of device realizing polycrystalline silicon ingot or purifying furnace cooling, ingot furnace based on existing structure:
It is provided with insulated door in the heat-insulation cage of described ingot furnace, heat-insulation cage is divided into upper and lower chamber
Room；
Described upper chamber is heating chamber, is equipped with heating assembly and crucible in it, is used for melting former
Material；
Described lower chambers is cool room, is equipped with cooling assembly in it, for melting in crucible
Change raw material uniform decrease in temperature, in order to realize crystal silicon homoepitaxial.
It is provided with orientation temperature conduction device in described upper chamber, upper chamber is divided into upper and lower two
Part；
Described upper part is provided with upper heater and crucible, and lower part is provided with lower heater.
Described insulated door is the temperature separation door of two superimposed, and wherein ground floor insulated door is heat insulation for closing
Door；Second layer insulated door is intermediate openings insulated door；
Described each layer insulated door runs through heat-insulation cage sidewall and is connected with driving motor, by driving motor
Door-plate is driven to be connected with heat-insulation cage snug engagement, it is achieved the open/close of insulated door；
When opening ground floor insulated door, second layer insulated door intermediate openings flows through cold air；Root
According to cooling rate and the requirement of lowering temperature uniform degree, make intermediate openings by opening second layer insulated door
Control more greatly to cool down the incoming amount of gas, finally control rate of cooling, control crystallization.
Described insulated door is set to N shell insulated door；Ground floor insulated door is closing insulated door,
Other insulated doors are set to intermediate openings；
When insulated door is n-th layer, the opening degree on n-th layer insulated door is set more than N-1
Opening degree on insulated door；
Wherein N 3, N is integer.
The draw-in groove that described each insulated door tail end is provided with heat-insulation cage sidewall docks, described heat insulation
The material of door is curing carbon fiber；Described opening is square, oblong openings.
The invention have the advantage that
1, refrigerating method of the present invention is that ingot furnace is equipped with Heat-insulation device, and the method is novel skilful
Wonderful effectively separate cold and hot in stove, control upper and lower thermograde.
2, refrigerating method of the present invention can be arranged to N shell temperature separation door, this inverted pyramid structure
Can more accurately control import gas flow and cooling position, make cooling rate and cooling position can
Control.
Accompanying drawing explanation
Fig. 1 be the present invention based on existing ingot furnace structure chart.
Fig. 2 is the overall structure schematic diagram of the present invention.
Fig. 3 is the temperature separation door structural representation of the present invention.
Fig. 4 is the temperature separation door intermediate openings structural representation of the present invention.
Fig. 5 is multiple temperature separation door intermediate openings structural representations of the present invention.
Fig. 6 is the multi-layer door stacked configuration schematic diagram of the present invention.
Detailed description of the invention
As shown in accompanying drawing Fig. 1-6,
A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling, ingot furnace based on existing structure, will
Heat-insulation cage 7 structure in ingot furnace improves；The first step, first at the heat-insulation cage of ingot furnace
Increase by a Heat-insulation device 4 in 7, two chambers closed will be formed in heat-insulation cage 7；Second step,
Upper heater 1, crucible 2 and lower heater 6 it is provided with the most wherein, by closing in upper chamber
Close Heat-insulation device 4, start upper heater 1 and lower heater 6 heats, in making crucible 2 simultaneously
Melting silicon materials；3rd step, is provided with heat-exchanger rig 5 below Heat-insulation device 4；4th step,
The size controlling Heat-insulation device 4 opening controls air conditioning quantity, controls crystal silicon homoepitaxial.Described
Heat-exchanger rig 5 uses water-cooled heat exchange dish.Described Heat-insulation device 4 uses multiple temperature separation door.
Heat-insulation device 4 in the above-mentioned first step is two or more temperature separation door, by each
Temperature separation door stacking is arranged.
When in the above-mentioned first step, Heat-insulation device 4 is two-layer temperature separation door, ground floor temperature separation door is arranged
For totally-enclosed temperature separation door, second layer temperature separation door is set to the temperature separation door of intermediate openings；Above-mentioned
In one step, Heat-insulation device 4 is according to the raw material requirement to lowering temperature uniform degree after fusing, is set by temperature separation door
It is set to N shell door；Ground floor door is totally enclosed, in being set as by the second layer ~ n-th layer temperature separation door
Portion's opening；When temperature separation door is N shell, opening degree on n-th layer temperature separation door is set more than the
Opening degree on N-1 temperature separation door；Wherein N 3, N is integer.
After described ground floor temperature separation door is opened, it is formed there through at the intermediate openings of remaining temperature separation door
Inverted pyramid shape.
A kind of chiller realizing polycrystalline silicon ingot or purifying furnace cooling, ingot casting based on existing structure
Stove, is provided with insulated door in the heat-insulation cage 7 of described ingot furnace, heat-insulation cage 7 is divided into above,
Lower chambers；Described upper chamber is heating chamber, is equipped with heating assembly and crucible 2, is used in it
Melt raw material, described heating assembly is upper and lower heater 1,6.Described lower chambers is refrigeration
Room, is equipped with cooling assembly in it, for the melt raw material uniform decrease in temperature in crucible 2, institute
Stating cooling assembly is water-cooled heat exchange dish, in order to realize crystal silicon homoepitaxial.
It is provided with orientation temperature conduction device 3 in described upper chamber, upper chamber is divided into upper and lower two
Individual part；Described upper part is provided with upper heater 1 and crucible 2, and lower part is provided with down and adds
Hot device 6.Described orientation temperature conduction device 3 is existing product, as used the wind of orientation air-supply
Fan, the blower fan of orientation air-supply, the air channel etc. of orientation air-supply.
Described insulated door is the temperature separation door of two superimposed, and wherein ground floor insulated door is heat insulation for closing
Door；Second layer insulated door is intermediate openings insulated door；Described each layer insulated door runs through heat-insulation cage 7
Sidewall is connected with driving motor, by driving motor to drive door-plate to join with heat-insulation cage 7 side walls
Close and connect, it is achieved the open/close of insulated door；When opening ground floor insulated door, the second layer is heat insulation
Door intermediate openings flows through cold air；According to cooling rate and the requirement of lowering temperature uniform degree, by beating
Opening second layer insulated door makes intermediate openings control more greatly to cool down the incoming amount of gas, finally controls
Rate of cooling, controls crystallization.
Described insulated door is set to N shell insulated door；Ground floor insulated door is closing insulated door,
Other insulated doors are set to intermediate openings；When insulated door is n-th layer, it is heat insulation that n-th layer is set
Opening degree on door is more than the opening degree on N-1 insulated door；Wherein N 3, N is integer.
The draw-in groove that described each insulated door tail end is provided with heat-insulation cage 7 sidewall docks, described every
Popular material is curing carbon fiber；Described opening is square, oblong openings.
Operating process is: by controlling the power of upper and lower heater 6, open insulated door, even
Water flowing cold heat exchange dish, makes temperature under silicon material decline and forms thermograde, and by changing insulated door
Openings of sizes control the size of ventilation volume, and then control the speed of crystal growth.
Open ground floor insulated door, it is achieved second layer insulated door intermediate openings is through, make cooling gas
Body imports and carries out heat exchange；Also can be according to cooling rate and the requirement of lowering temperature uniform degree, by beating again
Opening second layer temperature separation door makes intermediate openings maximum control to cool down the incoming amount of gas, finally controls
Homoepitaxial crystal silicon ingot in crucible 2.
Embodiment
Use existing polycrystalline silicon ingot or purifying furnace, melting 450kg polycrystalline silicon ingot casting, go through 52 hours,
Hair ingot yield rate 66%；After growing crystal silicon after using refrigerating plant of the present invention, same melting 450kg
Polycrystalline silicon ingot casting, goes through 46 hours, hair ingot yield rate 72%.
Claims (3)
1. the method realizing polycrystalline silicon ingot or purifying furnace cooling, ingot furnace based on existing structure, it is special
Levy and be:
Heat-insulation cage structure in ingot furnace is improved；
The first step, first increases by a Heat-insulation device in the heat-insulation cage of ingot furnace, will form two in heat-insulation cage
The chamber of individual closing；
Second step, is provided with upper heater, crucible and lower heater the most wherein in upper chamber, by closing
Close Heat-insulation device, start upper heater and lower heater heats simultaneously, make the melting silicon materials in crucible；
3rd step, is provided with heat-exchanger rig below Heat-insulation device；
4th step, the size controlling Heat-insulation device opening controls air conditioning quantity, controls crystal silicon homoepitaxial；
In the above-mentioned first step, temperature separation door is set to N shell door, and ground floor door is totally enclosed, by the second layer～
N-th layer temperature separation door is set as intermediate openings, each temperature separation door stacking is arranged；
When temperature separation door is N shell, the opening degree on n-th layer temperature separation door is set more than N-1 temperature separation door
On opening degree；
Wherein N 3, N is integer；
After being opened by described ground floor temperature separation door, at the intermediate openings of remaining temperature separation door, it is formed there through down gold word
Turriform shape.
2. realize polycrystalline silicon ingot or purifying furnace cooling a chiller, ingot furnace based on existing structure,
It is characterized in that:
It is provided with insulated door in the heat-insulation cage of described ingot furnace, heat-insulation cage is divided into upper and lower chamber；
Described upper chamber is heating chamber, is equipped with heating assembly and crucible, for melt raw material in it；
Described lower chambers is cool room, is equipped with cooling assembly in it, for the melt raw material in crucible
Uniform decrease in temperature, in order to realize crystal silicon homoepitaxial；
It is provided with orientation temperature conduction device in described upper chamber, upper chamber is divided into upper and lower two parts；
Described upper part is provided with upper heater and crucible, and lower part is provided with lower heater；
Described insulated door is set to N shell insulated door；Ground floor insulated door is for closing insulated door, and other are heat insulation
Door is set to intermediate openings；
When insulated door is n-th layer, it is heat insulation more than N-1 that the opening degree on n-th layer insulated door is set
Opening degree on door；
Wherein N 3, N is integer；
Described each layer insulated door runs through heat-insulation cage sidewall and is connected with driving motor, by driving motor driving gate
Plate is connected with heat-insulation cage snug engagement, it is achieved the open/close of insulated door.
3. the chiller as described in claim 2, it is characterised in that:
The draw-in groove that described each insulated door tail end is provided with heat-insulation cage sidewall docks, the material of described insulated door
Matter is curing carbon fiber；Described opening is square, oblong openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210177335.1A CN102912412B (en) | 2012-06-01 | 2012-06-01 | A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210177335.1A CN102912412B (en) | 2012-06-01 | 2012-06-01 | A kind of method realizing polycrystalline silicon ingot or purifying furnace cooling and chiller |
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| CN102912412A CN102912412A (en) | 2013-02-06 |
| CN102912412B true CN102912412B (en) | 2016-09-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103409790B (en) * | 2013-08-01 | 2016-02-03 | 安徽大晟新能源设备科技有限公司 | The lower well heater hoisting appliance of accurate single-crystal ingot casting furnace |
| CN106868586A (en) * | 2017-04-23 | 2017-06-20 | 连云港清友新能源科技有限公司 | For the heat exchange control device of the polycrystalline ingot furnace of oversize silicon ingot |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201473323U (en) * | 2009-07-27 | 2010-05-19 | 管悦 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN201883183U (en) * | 2010-11-18 | 2011-06-29 | 管悦 | Polysilicon ingot casting furnace thermal door device capable of effectively controlling thermal field |
| CN202766657U (en) * | 2012-06-01 | 2013-03-06 | 沈阳森之洋自动化科技有限公司 | Cooling device for cooling polycrystalline silicon ingot furnace |
-
2012
- 2012-06-01 CN CN201210177335.1A patent/CN102912412B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201473323U (en) * | 2009-07-27 | 2010-05-19 | 管悦 | Polycrystalline silicon ingot production furnace capable of effectively controlling thermal field |
| CN201883183U (en) * | 2010-11-18 | 2011-06-29 | 管悦 | Polysilicon ingot casting furnace thermal door device capable of effectively controlling thermal field |
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN202766657U (en) * | 2012-06-01 | 2013-03-06 | 沈阳森之洋自动化科技有限公司 | Cooling device for cooling polycrystalline silicon ingot furnace |
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Address after: 110013 Jiaxing international, No. 146 North Station Road, Shenhe District, Liaoning, Shenyang Applicant after: Shenyang Senzhiyang Automation Technology Co., Ltd. Address before: 110141 Xinguang village, Daxing street, Yuhong District, Liaoning, Shenyang Applicant before: Shenyang Senzhiyang Photovoltaic Technology Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: SHENYANG SENZHIYANG PHOTOVOLTAIC TECHNOLOGY CO., LTD. TO: SHENYANG SENZHIYANG UTOMATION ECHNOLOGY CO., LTD. |
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