CN201217712Y - Polysilicon directional long crystal thermal field structure - Google Patents
Polysilicon directional long crystal thermal field structure Download PDFInfo
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- CN201217712Y CN201217712Y CNU2008201211033U CN200820121103U CN201217712Y CN 201217712 Y CN201217712 Y CN 201217712Y CN U2008201211033 U CNU2008201211033 U CN U2008201211033U CN 200820121103 U CN200820121103 U CN 200820121103U CN 201217712 Y CN201217712 Y CN 201217712Y
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- heat insulating
- cage body
- base plate
- preserving
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 230000000694 effects Effects 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005192 partition Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001149 thermolysis Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The utility model relates to a polysilicon orientated growth thermal field structure which belongs to the technical field of the orientated growth thermal field structure of a solar polysilicon crystal. The polysilicon orientated growth thermal field structure mainly comprises a heat-preserving and heat-insulating cage body (1), a heater e (6) and a heat exchanged table (5) which are placed in the heat-preserving and heat-insulating cage body (1), a heat-preserving and heat-insulating base plate (2) arranged at the bottom part of the heat-preserving and heat-insulating cage body (1), moved vertically and provided with a bearing guide rod (4), and a heat-preserving and heat-insulating partition board (7) positioned between the side surface of the heat-preserving and heat-insulating cage body (1) and the heat exchanged table (5); the heat-preserving and heat-insulating cage body (1) and the heat-preserving and heat-insulating base plate (2) form a cavity chamber (3), and the heater (6) and the heat-preserving and heat-insulating base plate (2) are controlled by a peripheral controller (8). By adopting the lifting structure of the heat-preserving and heat-insulating base plate at the bottom part of the heat-preserving and heat-insulating cage body, the technology method for the polysilicon orientated growth is obtained, the dynamic adjustment is easily realized in control, and thereby the crystal growth speed is realized to the utmost extent.
Description
Technical field
The utility model relates to a kind of polysilicon directional long crystal thermal field, belongs to solar energy polycrystalline silicon crystalline oriented growth thermal field structure technical field.
Background technology
Silicon (Si) is a kind of semiconductor element, and solar silicon cell utilizes this characteristic exactly, forms the photovoltaic special efficacy at silicon face and answers, and produces electric energy.Be the preparation solar battery sheet, need be with directional freeze after the polycrystalline silicon raw material remelting, the battery chip module is made in section then.For realizing the directional long crystal process of setting of polysilicon, need one can stablize long brilliant thermal field, the major parts that constitutes the polysilicon long crystal thermal field is heat insulating cage body and places its inner well heater, heat exchange platform as required, the water flowing cooling block to be arranged.Heat insulating cage body is a cubic hexahedron, mainly is that the assurance temperature of thermal field can be kept, and according to technical project, base plate, top board, four side plates separately can be made parts, needs to realize motion; Well heater mainly provides thermal field intensification necessary energy; The heat exchange platform plays thermolysis as the workplatform of polycrystalline silicon raw material; The water flowing cooling block is connected with water coolant because of its inside, exists as forcing cooling effect in indivedual technical schemes.For convenience of description, existing polysilicon directional long crystal thermal field technology can be divided into the side plate crystal pulling method, dividing plate pull method etc.
The side plate crystal pulling method mainly is that four side plates that will constitute the heat insulating cage body of thermal field are designed to a moving parts, side plate down moves and the long brilliant thermal field of polysilicon remelting can be closed, energising heats up the well heater in the thermal field, with the heat fused polycrystalline silicon raw material; Side plate parts up promotes, and then opens the thermal field chamber, exposes the heat exchange platform, forms the thermal field vertical temperature gradient, by certain processing step, realizes the directional long crystal process.Dividing plate pull method is that the centre that will constitute the heat insulating cage body of thermal field is provided with one group of heat insulating dividing plate, the water flowing cooling block and the heat exchange platform of thermal field bottom are separated, after polycrystalline silicon raw material melts fully, take out the heat insulation dividing plate of intermediary by certain processing step, make water flowing cooling block and heat exchange platform generation heat exchange, form the thermal field vertical temperature gradient, realize the directional long crystal process.Problems such as though can both reach the purpose of epitaxis, all there is complex structure in two kinds of above-mentioned methods, and energy consumption is higher, and thermal shocking is big, and are long slowly brilliant, and crystal growth is of poor quality.
Summary of the invention
The purpose of this utility model provides a kind of reasonable in design, and is simple in structure, the polysilicon directional long crystal thermal field that directional long crystal is effective.
The utility model is a kind of polysilicon directional long crystal thermal field, comprise heat insulating cage body, place intravital well heater of heat insulating cage and heat exchange platform, the bottom that it is characterized in that heat insulating cage body also is provided with the heat insulating base plate of vertical movement up and down, and heat insulating cage body and heat insulating base plate form a chamber.
Described heat insulating cage body bottom can directly be connected with the surface of heat insulating base plate.Described heat insulating cage body bottom can be L type structure and is connected with the dislocation of heat insulating base plate two ends.Described heat insulating base plate two ends can be L type structure and are connected with the dislocation of heat insulating cage body bottom.
Described heat insulating base plate can vertical movement up and down under the effect of support guide rod.
Also be provided with the heat insulating dividing plate between the side of described heat insulating cage body and the heat exchange platform.
Described well heater and heat insulating base plate are controlled by the controller of peripheral hardware respectively.
The utility model is through repeatedly computer simulation and repetition test compare, lifting structure setting by heat insulating cage body bottom heat insulating base plate, obtain the needed process means of polysilicon directional long crystal, compared with prior art, have following outstanding advantage and positively effect:
1, simple in structure, the heat insulating base plate of lift is in light weight, and mode of motion is single, is very easy to integrate with outside other structure units of thermal field; And the interface of heat insulating base plate and heat insulating cage body is few, reduced when motion because of fricative dust each other to the pollution of high-purity polycrystalline silicon raw material;
2, fit actual test by computer mould, the thermal field vertical temperature gradient is even more ideal, and crystallization trend is towards idealized development, and impurities removal is effective;
3, thermal shocking is little, and internal stress is little during the crystallization of silicon liquid, and crystallization dislocation rate is low.When heat insulating cage body bottom heat insulating base plate moves downward, can not cause the rapid decline of temperature in the thermal field chamber, and because by Computer Simulation Optimization, make crystal growth interface level height basically identical, crystalline stress is little, and the dislocation possibility is low;
4, energy consumption is low, at the well heater two ends heat insulating dividing plate is set, and chamber is separated into two portions up and down, after the heat insulating base plate moves downward, can stop further that the chamber first half externally dispels the heat, thereby reduces the heating power of well heater, reduces power consumption.Actual detected, crystallization power are compared and can be reduced by 20% more than;
5, the utility model makes the global design of thermal field structure more become rationally simple, make heating (heater power) be positioned at different zones with heat radiation (base plate slippage), two mutual interference of value reduce, the dynamic adjustment of two values of easier realization in control, thus maximization realizes long brilliant speed.
Description of drawings
Fig. 1 is an one-piece construction sectional view of the present utility model;
Fig. 2 is the structural representation of the B shown in Figure 1 L of place type heat insulating cage body bottom;
Fig. 3 is the structural representation of the B shown in Figure 1 L of place type heat insulating base plate;
Fig. 4 is a fundamental diagram of the present utility model.
Embodiment
The utility model is mainly by heat insulating cage body 1, place well heater 6 and heat exchange platform 5 in the heat insulating cage body 1, place the heat insulating cage body 1 bottom heat insulating base plate 2 of the band support guide rod 4 of vertical movement up and down, place the side of heat insulating cage body 1 and the formations such as heat insulating dividing plate 7 between the heat exchange platform 5; Heat insulating cage body 1 and heat insulating base plate 2 form a chamber 3, and well heater 6 and heat insulating base plate 2 are controlled by the controller 8 of peripheral hardware respectively; Heat insulating cage body 1 and the mode of connection of heat insulating base plate 2 have that heat insulating cage body 1 bottom directly is connected with the surface of heat insulating base plate 2, heat insulating cage body 1 bottom is L type structure and misplace with heat insulating base plate 2 two ends be connected, heat insulating base plate 2 two ends are L type structure and misplace with heat insulating cage body 1 bottom and to be connected etc., shown in accompanying drawing 1,2,3.
Technical process below in conjunction with the polysilicon directional long crystal is further described the utility model:
1, polycrystalline silicon raw material 9 is filled crucible 10, put and be placed on the heat exchange platform 5;
2, operation control 8, rise heat insulating base plate 2, sealing chamber 3;
3, the conventional production process by existing polysilicon vacuumizes chamber 3;
4, when reaching the vacuum tightness of common process setting, energising starts well heater 6, and polycrystalline silicon raw material is heated.Because the heat insulating effect of chamber 3, production technique is about more than ten hours routinely, hundreds of kilograms of polycrystalline silicon raw materials can be melted fully;
5, technology continues insulation for some time routinely, allows the impurity in the polycrystalline silicon raw material fully melt, to volatilize or to gasify;
6, change master mode, progressively, the heat insulating base plate 2 that slowly descends, at this moment, heat exchange platform 5 in chamber 3 Lower Halves comes out, a large amount of heat is distributed to external irradiation by hollow arrow direction shown in the accompanying drawing 4 via heat exchange platform 5 bottoms, at this moment, heat exchange must also take place with heat exchange platform 5 in crucible 10, thereby makes the silicon liquid temp of crucible 10 bottoms reduce the generation crystalline polamer.Simultaneously, after heat insulating base plate 2 is opened, heat insulating dividing plate 7 in the chamber 3 makes chamber 3 tops still surround a high-temperature zone, under the effect of well heater 6, can keep the temperature of arts demand, the bottom is because thermolysis, form a cold zone, like this, in whole technological process, by the heat effect of well heater 6 and the dual regulation effect of heat insulating base plate 2 positions, forming one below the whole crystal plane of silicon smooth has certain temperature gradient temperature curve downwards, make the long crystal solidification of silicon be effectively controlled, thereby produce high-quality polycrystalline silicon ingot casting.
The utility model can not only be produced high-quality polycrystalline silicon ingot casting in actual applications after tested, has also shortened the whole process time, has reduced the energy consumption in the crystallisation process.
Claims (7)
1, a kind of polysilicon directional long crystal thermal field, comprise heat insulating cage body (1), place well heater (6) and heat exchange platform (5) in the heat insulating cage body (1), the bottom that it is characterized in that heat insulating cage body (1) also is provided with the heat insulating base plate (2) of vertical movement up and down, and heat insulating cage body (1) and heat insulating base plate (2) form a chamber (3).
2,, it is characterized in that described heat insulating cage body (1) bottom directly is connected with the surface of heat insulating base plate (2) by the described a kind of polysilicon directional long crystal thermal field of claim 1.
3,, it is characterized in that described heat insulating cage body (1) bottom is connected for L type structure and with the dislocation of heat insulating base plate (2) two ends by the described a kind of polysilicon directional long crystal thermal field of claim 1.
4,, it is characterized in that described heat insulating base plate (2) two ends are L type structure and are connected with the dislocation of heat insulating cage body (1) bottom by the described a kind of polysilicon directional long crystal thermal field of claim 1.
5,, it is characterized in that described heat insulating base plate (2) vertical movement up and down under the effect of support guide rod (4) by claim 1 or 2 or 3 described a kind of polysilicon directional long crystal thermal fields.
6,, it is characterized in that also being provided with heat insulating dividing plate (7) between the side of described heat insulating cage body (1) and the heat exchange platform (5) by the described a kind of polysilicon directional long crystal thermal field of claim 1.
7,, it is characterized in that described well heater (6) and heat insulating base plate (2) controlled by the controller (8) of peripheral hardware respectively by the described a kind of polysilicon directional long crystal thermal field of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201211033U CN201217712Y (en) | 2008-07-04 | 2008-07-04 | Polysilicon directional long crystal thermal field structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201211033U CN201217712Y (en) | 2008-07-04 | 2008-07-04 | Polysilicon directional long crystal thermal field structure |
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| CN201217712Y true CN201217712Y (en) | 2009-04-08 |
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| CNU2008201211033U Expired - Fee Related CN201217712Y (en) | 2008-07-04 | 2008-07-04 | Polysilicon directional long crystal thermal field structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886291A (en) * | 2010-07-13 | 2010-11-17 | 王敬 | Heat insulating cage and ingot casting furnace with same |
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN112176407A (en) * | 2020-10-21 | 2021-01-05 | 苏州昀丰半导体装备有限公司 | Thermal field structure of square silicon core ingot furnace and preparation method |
-
2008
- 2008-07-04 CN CNU2008201211033U patent/CN201217712Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886291A (en) * | 2010-07-13 | 2010-11-17 | 王敬 | Heat insulating cage and ingot casting furnace with same |
| CN102021646A (en) * | 2011-01-07 | 2011-04-20 | 管文礼 | Thermal field structure of polycrystalline silicon crystal growing furnace |
| CN112176407A (en) * | 2020-10-21 | 2021-01-05 | 苏州昀丰半导体装备有限公司 | Thermal field structure of square silicon core ingot furnace and preparation method |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHAOXING JINGGONG ELECTRICAL AND MECHANICAL INSTIT Free format text: FORMER NAME: SHAOXING FINE ELECTROMECHANICAL INSTITUTE CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Jianhu road 312030 Zhejiang County of Shaoxing province Keqiao Industrial Park No. 1809 Cauchy Street Patentee after: Shaoxing Jinggong Electronic Research Institute Co., Ltd. Address before: Jianhu road 312030 Zhejiang County of Shaoxing province Keqiao Industrial Park No. 1809 Cauchy Street Patentee before: Shaoxing Fine Electromechanical Institute Co., Ltd. |
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| C56 | Change in the name or address of the patentee |
Owner name: HANGZHOU JINGGONG ELECTRICAL RESEARCH INSTITUTE CO Free format text: FORMER NAME: SHAOXING JINGGONG MECHANICAL AND ELECTRICAL INSTITUTE CO., LTD. |
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| CP03 | Change of name, title or address |
Address after: 310018, No. 2, No. 17, No. 9, Hangzhou economic and Technological Development Zone, Zhejiang, Hangzhou Province, fourth floors Patentee after: Hangzhou Jinggong Mechanical & Electrical Research Institute Co., Ltd. Address before: Jianhu road 312030 Zhejiang County of Shaoxing province Keqiao Industrial Park No. 1809 Cauchy Street Patentee before: Shaoxing Jinggong Electronic Research Institute Co., Ltd. |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160824 Address after: 312030 Zhejiang city of Shaoxing province Jianhu road Keqiao District No. 1809 Patentee after: Zhejiang Jinggong Science & Technology Co., Ltd. Address before: 310018, No. 2, No. 17, No. 9, Hangzhou economic and Technological Development Zone, Zhejiang, Hangzhou Province, fourth floors Patentee before: Hangzhou Jinggong Mechanical & Electrical Research Institute Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 Termination date: 20170704 |
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| CF01 | Termination of patent right due to non-payment of annual fee |