CN201686765U - Polycrystalline furnace thermal field - Google Patents
Polycrystalline furnace thermal field Download PDFInfo
- Publication number
- CN201686765U CN201686765U CN2010201741126U CN201020174112U CN201686765U CN 201686765 U CN201686765 U CN 201686765U CN 2010201741126 U CN2010201741126 U CN 2010201741126U CN 201020174112 U CN201020174112 U CN 201020174112U CN 201686765 U CN201686765 U CN 201686765U
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- heat insulating
- cage body
- thermal field
- base plate
- thermal insulation
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Abstract
The utility model relates to a polycrystalline furnace thermal field, which belongs to the technical field of directional growing thermal field structures of polycrystalline silicon crystals. The polycrystalline furnace thermal field comprises a thermal insulation cage body, a heater and a heat exchange table, wherein the heater and the heat exchange table are placed in the thermal insulation cage body; a thermal insulation baseplate capable of vertically moving is arranged at the bottom of the thermal insulation cage body; and a cavity chamber is formed by the thermal insulation cage body and the thermal insulation baseplate. The utility model has the advantages of simple structure, reasonable and simple design, excellent trash removing effect and low energy consumption.
Description
Technical field
The utility model relates to a kind of polycrystalline furnace thermal field, belongs to solar energy polycrystalline silicon crystalline oriented growth thermal field structure technical field.
Background technology
Silicon (Si) is a kind of semiconductor element, and solar silicon cell utilizes this characteristic exactly, forms the photovoltaic special efficacy at silicon face and answers, and produces electric energy.Be the preparation solar battery sheet, need be with directional freeze after the polycrystalline silicon raw material remelting, the battery chip module is made in section then.For realizing the directional long crystal process of setting of polysilicon, need one can stablize long brilliant thermal field, the major parts that constitutes the polysilicon long crystal thermal field is heat insulating cage body and places its inner well heater, heat exchange platform as required, the water flowing cooling block to be arranged.Heat insulating cage body is a cubic hexahedron, mainly is that the assurance temperature of thermal field can be kept, and according to technical project, base plate, top board, four side plates separately can be made parts, needs to realize motion; Well heater mainly provides thermal field intensification necessary energy; The heat exchange platform plays thermolysis as the workplatform of polycrystalline silicon raw material; The water flowing cooling block is connected with water coolant because of its inside, exists as forcing cooling effect in indivedual technical schemes.For convenience of description, existing polysilicon directional long crystal thermal field technology can be divided into the side plate crystal pulling method, dividing plate pull method etc.
The side plate crystal pulling method mainly is that four side plates that will constitute the heat insulating cage body of thermal field are designed to a moving parts, side plate down moves and the long brilliant thermal field of polysilicon remelting can be closed, energising heats up the well heater in the thermal field, with the heat fused polycrystalline silicon raw material; Side plate parts up promotes, and then opens the thermal field chamber, exposes the heat exchange platform, forms the thermal field vertical temperature gradient, by certain processing step, realizes the directional long crystal process.Dividing plate pull method is that the centre that will constitute the heat insulating cage body of thermal field is provided with one group of heat insulating dividing plate, the water flowing cooling block and the heat exchange platform of thermal field bottom are separated, after polycrystalline silicon raw material melts fully, take out the heat insulation dividing plate of intermediary by certain processing step, make water flowing cooling block and heat exchange platform generation heat exchange, form the thermal field vertical temperature gradient, realize the directional long crystal process.Problems such as though can both reach the purpose of epitaxis, all there is complex structure in two kinds of above-mentioned methods, and energy consumption is higher, and thermal shocking is big, and are long slowly brilliant, and crystal growth is of poor quality.
The utility model content
The purpose of this utility model provides a kind of reasonable in design, and is simple in structure, a kind of polycrystalline furnace thermal field structure that directional long crystal is effective.
The utility model is a kind of polycrystalline furnace thermal field, comprise heat insulating cage body, place intravital well heater of heat insulating cage and heat exchange platform, the bottom of heat insulating cage body also is provided with the heat insulating base plate of vertical movement up and down, and heat insulating cage body and heat insulating base plate form a chamber.Described heat insulating cage body bottom can directly be connected with the surface of heat insulating base plate.Described heat insulating cage body bottom can be L type structure and is connected with the dislocation of heat insulating base plate two ends.
The utility model is through repeatedly computer simulation and repetition test compare, lifting structure setting by heat insulating cage body bottom heat insulating base plate, obtain the needed process means of polysilicon directional long crystal, compared with prior art, have following outstanding advantage and positively effect: 1, simple in structure, the heat insulating base plate of lift is in light weight, and mode of motion is single, is very easy to integrate with outside other structure units of thermal field; And the interface of heat insulating base plate and heat insulating cage body is few, reduced when motion because of fricative dust each other to the pollution of high-purity polycrystalline silicon raw material; 2, fit actual test by computer mould, the thermal field vertical temperature gradient is even more ideal, and crystallization trend is towards idealized development, and impurities removal is effective; 3, thermal shocking is little, and internal stress is little during the crystallization of silicon liquid, and crystallization dislocation rate is low.When heat insulating cage body bottom heat insulating base plate moves downward, can not cause the rapid decline of temperature in the thermal field chamber, and because by Computer Simulation Optimization, make crystal growth interface level height basically identical, crystalline stress is little, and the dislocation possibility is low; 4, energy consumption is low, at the well heater two ends heat insulating dividing plate is set, and chamber is separated into two portions up and down, after the heat insulating base plate moves downward, can stop further that the chamber first half externally dispels the heat, thereby reduces the heating power of well heater, reduces power consumption.Actual detected, crystallization power are compared and can be reduced by 20% more than; 5, the utility model makes the global design of thermal field structure more become rationally simple, make heating (heater power) be positioned at different zones with heat radiation (base plate slippage), two mutual interference of value reduce, the dynamic adjustment of two values of easier realization in control, thus maximization realizes long brilliant speed.
Description of drawings
Fig. 1 is an one-piece construction sectional view of the present utility model;
Fig. 2 is the structural representation of the B shown in Figure 1 L of place type heat insulating cage body bottom;
Fig. 3 is the structural representation of the B shown in Figure 1 L of place type heat insulating base plate;
Fig. 4 is a fundamental diagram of the present utility model.
Embodiment
The utility model is mainly by heat insulating cage body 1, place well heater 6 and heat exchange platform 5 in the heat insulating cage body 1, place the heat insulating cage body 1 bottom heat insulating base plate 2 of the band support guide rod 4 of vertical movement up and down, place the side of heat insulating cage body 1 and the formations such as heat insulating dividing plate 7 between the heat exchange platform 5; Heat insulating cage body 1 and heat insulating base plate 2 form a chamber 3, and well heater 6 and heat insulating base plate 2 are controlled by the controller 8 of peripheral hardware respectively; Heat insulating cage body 1 and the mode of connection of heat insulating base plate 2 have that heat insulating cage body 1 bottom directly is connected with the surface of heat insulating base plate 2, heat insulating cage body 1 bottom is L type structure and misplace with heat insulating base plate 2 two ends be connected, heat insulating base plate 2 two ends are L type structure and misplace with heat insulating cage body 1 bottom and to be connected etc., shown in accompanying drawing 1,2,3.
Technical process below in conjunction with the polysilicon directional long crystal is further described the utility model:
1, polycrystalline silicon raw material 9 is filled crucible 10, put and be placed on the heat exchange platform 5;
2, operation control 8, rise heat insulating base plate 2, sealing chamber 3;
3, the conventional production process by existing polysilicon vacuumizes chamber 3;
4, when reaching the vacuum tightness of common process setting, energising starts well heater 6, and polycrystalline silicon raw material is heated.Because the heat insulating effect of chamber 3, production technique is about more than ten hours routinely, hundreds of kilograms of polycrystalline silicon raw materials can be melted fully;
5, technology continues insulation for some time routinely, allows the impurity in the polycrystalline silicon raw material fully melt, to volatilize or to gasify;
6, change master mode, progressively, the heat insulating base plate 2 that slowly descends, at this moment, heat exchange platform 5 in chamber 3 Lower Halves comes out, a large amount of heat is distributed to external irradiation by hollow arrow direction shown in the accompanying drawing 4 via heat exchange platform 5 bottoms, at this moment, heat exchange must also take place with heat exchange platform 5 in crucible 10, thereby makes the silicon liquid temp of crucible 10 bottoms reduce the generation crystalline polamer.Simultaneously, after heat insulating base plate 2 is opened, heat insulating dividing plate 7 in the chamber 3 makes chamber 3 tops still surround a high-temperature zone, under the effect of well heater 6, can keep the temperature of arts demand, the bottom is because thermolysis, form a cold zone, like this, in whole technological process, by the heat effect of well heater 6 and the dual regulation effect of heat insulating base plate 2 positions, forming one below the whole crystal plane of silicon smooth has certain temperature gradient temperature curve downwards, make the long crystal solidification of silicon be effectively controlled, thereby produce high-quality polycrystalline silicon ingot casting.
Claims (3)
1. polycrystalline furnace thermal field, comprise heat insulating cage body (1), place well heater (6) and heat exchange platform (5) in the heat insulating cage body (1), the bottom that it is characterized in that heat insulating cage body (1) also is provided with the heat insulating base plate (2) of vertical movement up and down, and heat insulating cage body (1) and heat insulating base plate (2) form a chamber (3).
2. by the described a kind of polycrystalline furnace thermal field of claim 1, it is characterized in that described heat insulating cage body (1) bottom directly is connected with the surface of heat insulating base plate (2).
3. by the described a kind of polycrystalline furnace thermal field of claim 1, it is characterized in that described heat insulating cage body (1) bottom is connected for L type structure and with the dislocation of heat insulating base plate (2) two ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201741126U CN201686765U (en) | 2010-04-29 | 2010-04-29 | Polycrystalline furnace thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201741126U CN201686765U (en) | 2010-04-29 | 2010-04-29 | Polycrystalline furnace thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201686765U true CN201686765U (en) | 2010-12-29 |
Family
ID=43375051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010201741126U Expired - Fee Related CN201686765U (en) | 2010-04-29 | 2010-04-29 | Polycrystalline furnace thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201686765U (en) |
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2010
- 2010-04-29 CN CN2010201741126U patent/CN201686765U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: Wang Chuanyong Document name: Notification to Pay the Fees |
|
| DD01 | Delivery of document by public notice |
Addressee: Wang Chuanyong Document name: Notification of Termination of Patent Right |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101229 Termination date: 20110429 |