CN103451726A - Water chilling ingot furnace and ingot casting process thereof - Google Patents
Water chilling ingot furnace and ingot casting process thereof Download PDFInfo
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- CN103451726A CN103451726A CN2013103779484A CN201310377948A CN103451726A CN 103451726 A CN103451726 A CN 103451726A CN 2013103779484 A CN2013103779484 A CN 2013103779484A CN 201310377948 A CN201310377948 A CN 201310377948A CN 103451726 A CN103451726 A CN 103451726A
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Abstract
The invention discloses a water chilling ingot furnace and an ingot casting process thereof. A water cooling disc (13) is arranged at the lower end of a heat exchange table (11), located at the lower end of a bottom heater (7), internally provided with a flow cavity and provided with a water inlet (9) and a water outlet (10), wherein the water inlet (9) and the water outlet (10) are communicated through the flow cavity, and are respectively communicated with the outer end of a furnace body (1). The water chilling ingot furnace disclosed by the invention has the beneficial effects that the problem of influence on formation of columnar crystals due to transfer of heat of a crucible in a radial direction caused by lifting an insulating cage to dissipate heat from a side is solved by way of replacing the original mode of lifting the insulating cage to dissipate heat by water cooling; an insulating cage body in a lifting process is prevented from rubbing with the top of the insulating cage to generate carbon dust which is easy to enter the crucible to increase carbon impurity content of a silicon ingot so as to cause lattice deformation.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon ingot or purifying furnace, particularly relate to a kind of water refrigeration ingot furnace and casting ingot process thereof.
Background technology
Polycrystalline silicon ingot or purifying furnace is the major equipment of production of polysilicon in the photovoltaic field; its working process be by hotchpotch and polycrystalline silicon material under vacuum, the condition of high temperature; add again inert protective gas, through heating, fusing, crystallographic orientation, annealing with grow up to the polycrystal silicon ingot that certain crystal growth direction is arranged after cooling several stage.
In existing ingot casting process, adopting top and sidepiece well heater to control thermal field distributes, in fusing and long brilliant stage, take the method for a lifting device lifting heat-insulation cage body to reduce silicon material burn-off rate and control long brilliant speed, annealing stage improves the heat-insulation cage body again, make a heat part transmit and take away by crucible bottom graphite block heat, a part exhales by the heat-insulation cage radiation of opening.
But there are a lot of problems in above-mentioned method.At first, promote the heat-insulation cage body, the side heat radiation, cause crucible radially to have the transmission of heat, radially conduct heat and produce radial symmetry gradient and cause near easy forming core sidewall of crucible, this nucleus can constantly be grown up along with the carrying out of radially conducting heat, vertical gradient and radial gradient dual function cause the non-perpendicular growth of crystal grain, but present from sidewall, to center, grow obliquely, thereby produce a large amount of nucleus, affect the formation of column crystal, simultaneously, a large amount of nucleus easily make silicon ingot have a large amount of crystal boundaries and dislocation, crystal boundary and energy of dislocation are introduced deep energy level in the silicon forbidden band, easily form the deathnium of photoproduction minority carrier, and then the photoelectric transformation efficiency of reduction silion cell, secondly, the heat-insulation cage body in lifting process with the heat-insulation cage friction-top, produce carbon dust, easily enter crucible, increase the carbon foreign matter content of silicon ingot, the carbon atomic ratio Siliciumatom is little, easily cause lattice distortion after carbon atom substituted for silicon atom, cause Sauerstoffatom segregation and form the heterogeneous nuclei of oxygen precipitation nearby, produce primary oxygen precipitation, become deathnium or introduce the secondary defect in deathnium, cause minority carrier lifetime in silicon materials to reduce, high purity carbon can form the SiC particle in silicon melt in addition, affects the effective rate of utilization of silicon ingot, finally, after promoting the heat-insulation cage body, the heat radiation of crucible bottom heat exchange platform center and peripheral is inhomogeneous, in process of production admittedly-the liquid interface is out-of-level, causes the interface nucleation inhomogeneous, affects the formation of column crystal, Gu the out-of-level while of-liquid interface also causes in silicon ingot thermal stresses larger, make in silicon ingot defect more, too much defect easily forms the deathnium of photoproduction minority carrier, affects the photoelectric transformation efficiency of silion cell.
Summary of the invention
The object of the invention is to overcome the shortcoming and defect of above-mentioned prior art, a kind of water refrigeration ingot furnace and casting ingot process thereof are provided, solve existing silicon ingot foundry furnace when casting silicon ingot, the mode that adopts lifting device to promote heat-insulation cage reduces silicon material burn-off rate and controls long brilliant speed, bring silicon ingot to have a large amount of crystal boundaries and the shortcoming of dislocation, and the increase of carbon foreign matter content cause the defect of the reduction of minority carrier lifetime in silicon materials.
Purpose of the present invention is achieved through the following technical solutions: a kind of water refrigeration ingot furnace, comprise body of heater, be arranged on the heat-insulation cage in body of heater and be arranged on heat exchange platform in heat-insulation cage, be placed with a crucible on described heat exchange platform, top and the surrounding of described crucible are distributed with well heater, the lower end of heat exchange platform is provided with bottom heater, the lower end of described heat exchange platform is provided with aqueous cold plate, and aqueous cold plate is positioned at the lower end of bottom heater, establish the stream chamber in aqueous cold plate, and water-in and water outlet be set, water-in and water outlet are communicated with by the stream chamber, water-in and water outlet also are communicated with respectively the body of heater outer end.This device reduces the temperature of crucible bottom by pass into cold water to aqueous cold plate, bottom heater promotes the temperature of crucible bottom, both coordinate consolidate-liquid interface Transverse Temperature Gradient of lower maintenance to go to zero, and to crystal, growth provides desirable warm field condition, promotes the crystal columnar growth; At annealing stage, bottom graphite heater and aqueous cold plate dual function can make silicon ingot temperature homogeneous within a short period of time, obtain the annealing conditions of optimizing, and are conducive to the release of silicon ingot built-in thermal stress, improve the yield rate of silicon chip; Adopt the aqueous cold plate cooling without promoting heat-insulation cage, thereby reduced the carbon dust entered in crucible, effectively eliminate the silicon ingot built-in thermal stress, reduce defect in silicon ingot, significantly improve Si wafer quality.
Further, be provided with the adiabatic felt that solidifies between above-mentioned aqueous cold plate and bottom heater, the adiabatic effectively intercept heat going down of felt that solidifies, reduce energy consumption, guarantees the heats of bottom heater.
Further, the upper and lower surface of above-mentioned bottom heater all is covered with one deck cubic boron nitride, cubic boron nitride is the thermal conductivity good insulating body, not only can effectively stop graphite board above graphite heater to form circuit, can also guarantee effectively evenly transmitting of heat.
Further, described heat exchange platform is fixed by pillar, and an end of described pillar is arranged on the bottom surface of heat exchange platform, and the other end is arranged on the bottom of body of heater through heat-insulation cage.
Further, the periphery of above-mentioned crucible and lower end are provided with the graphite backplate, and the graphite backplate is not only played a supporting role to crucible, can also be incubated body of heater.
Further, above-mentioned heat exchange platform adopts graphite to make, and graphite has good heat conductivility, and heat conduction is more even.
Further, the well heater of the top of above-mentioned crucible, surrounding and bottom heater all adopt graphite to make.
The casting ingot process of water refrigeration ingot furnace, comprise vacuumizing phase, heating phase, fusion stage, long brilliant stage, annealing and cooling stages, when the long brilliant stage, close bottom heater, the fetch boiling water gate of the water-in on cold dish and the gate of water outlet, pass into water coolant to aqueous cold plate, to crucible, carries out cooling, wherein the temperature of water coolant remains on 24 ℃, and its flow is 100-500L/m; When annealing and cooling stages, continue to pass into water coolant to aqueous cold plate, and the control cooling water flow is 120-130L/m.In the present invention, adopt aqueous cold plate to control the cooling of crucible in long brilliant process, avoided adopting the drawback that promotes heat-insulation cage cooling generation side heat radiation, and present method flow that can control water coolant controls the speed of cooling, for the crystal growth provides reasonable temperature field environment.And anneal cooling in, be also can control cooling water flow to control cooling rate, thereby obtain the annealing conditions of optimizing, be conducive to the release of silicon ingot built-in thermal stress, improve the yield rate of silicon chip.
The invention has the beneficial effects as follows: the mode that this device adopts water-cooled to replace original lifting heat-insulation cage to be lowered the temperature, thereby solved because promoting heat-insulation cage, the side heat radiation, cause crucible radially to have the transmission of heat, affect the formation of column crystal, simultaneously, a large amount of nucleus easily make silicon ingot have a large amount of crystal boundaries and dislocation, crystal boundary and energy of dislocation are introduced deep energy level in the silicon forbidden band, easily form the deathnium of photoproduction minority carrier, and then reduce the photoelectric transformation efficiency of silion cell; Also avoided the heat-insulation cage body in lifting process with the heat-insulation cage friction-top, produce carbon dust, easily enter crucible, increase the carbon foreign matter content of silicon ingot, cause lattice distortion.
The accompanying drawing explanation
The structural representation that Fig. 1 is embodiment 1;
The structural representation that Fig. 2 is embodiment 2;
The structural representation that Fig. 3 is embodiment 3;
In figure, 1-body of heater, 2-top heater, 3-heat-insulation cage, 4-crucible, 5-graphite backplate, 6-sidepiece well heater, 7-bottom heater, adiabatic felt, 9-water-in, 10-water outlet, 11-heat exchange platform, 12-cubic boron nitride, 13-aqueous cold plate, the 14-pillar of solidifying of 8-.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but structure of the present invention is not limited only to following examples:
[embodiment 1]
As shown in Figure 1, a kind of water refrigeration ingot furnace, comprise body of heater 1, be arranged on the heat-insulation cage 3 in body of heater and be arranged on heat exchange platform 11 in heat-insulation cage 3, be placed with a crucible 4 on described heat exchange platform 3, top and the surrounding of described crucible 4 are distributed with well heater, the lower end of heat exchange platform 11 is provided with bottom heater 7, the lower end of described heat exchange platform 11 is provided with aqueous cold plate 13, and aqueous cold plate 13 is positioned at the lower end of bottom heater 7, establish the stream chamber in aqueous cold plate 13, and water-in 9 and water outlet 10 be set, water-in 9 and water outlet 10 are communicated with by the stream chamber, water-in 9 and water outlet 10 also are communicated with respectively body of heater 1 outer end.This device reduces the temperature of crucible 4 bottoms by pass into cold water to aqueous cold plate 13, bottom heater 7 is the temperature of lifting crucible 4 bottoms, both coordinate consolidate-liquid interface Transverse Temperature Gradient of lower maintenance to go to zero, and to crystal, growth provides desirable warm field condition, promotes the crystal columnar growth; At annealing stage, bottom graphite heater 7 and aqueous cold plate 13 dual functions can make silicon ingot temperature homogeneous within a short period of time, obtain the annealing conditions of optimizing, and are conducive to the release of silicon ingot built-in thermal stress, improve the yield rate of silicon chip; Adopt aqueous cold plate 13 coolings without promoting heat-insulation cage 3, thereby reduced the carbon dust that enters 4 li, crucible, effectively eliminate the silicon ingot built-in thermal stress, reduce defect in silicon ingot, significantly improve Si wafer quality.
The heat exchange platform 11 of the present embodiment is fixed by pillar 14, and an end of described pillar 14 is arranged on the bottom surface of heat exchange platform 11, and the other end is arranged on the bottom of body of heater 1 through heat-insulation cage 3.
Periphery and the lower end of the crucible 4 of the present embodiment are provided with graphite backplate 5, and the graphite backplate is not only played a supporting role to crucible 4, can also be incubated body of heater.
The heat exchange platform 11 of the present embodiment adopts graphite to make, and graphite has good heat conductivility, and heat conduction is more even.
The top of the crucible 4 of the present embodiment, the well heater of surrounding and bottom heater 7 all adopt graphite to make, and the well heater on the top of crucible is the top heater 2 in figure, and the well heater of surrounding is the sidepiece well heater 6 in figure.
In the present embodiment, crucible 4 adopts quartz to make.
The casting ingot process of water refrigeration ingot furnace comprises vacuumizing phase, heating phase, fusion stage, long brilliant stage, annealing and cooling stages:
First with mechanical pump, be evacuated to furnace pressure in vacuumizing phase and be less than 50 millibars, open lobe pump, until furnace pressure approaches vacuum values;
In the heating phase, adopt power heating under vacuum mode, make temperature in stove reach as early as possible temperature required (approximately 1100 ℃ of left and right), automatically by the power heating pattern, convert the temperature control heating pattern to and jump into the fusion stage when reaching temperature required;
After entering the fusion stage, slowly be filled with argon gas, finally make furnace pressure remain on the 400-600 millibar, progressively be heated to stage by stage 1500 ℃ of left and right, and keep certain hour to silicon material to melt fully;
In above three phases coolship, water coolant is all in closing condition;
When the long brilliant stage, close bottom heater 7, the gate of the water-in 9 on the cold dish 13 of fetching boiling water and the gate of water outlet 10, pass into water coolant to aqueous cold plate 13, crucible 4 carried out cooling, and wherein the temperature of water coolant remains on 24 ℃, and its flow is 100-500L/m;
When annealing and cooling stages, continue to pass into water coolant to aqueous cold plate 13, and the control cooling water flow is 120-130L/m.
In the present invention, adopt aqueous cold plate 13 to control the cooling of crucible 4 in long brilliant process, avoided adopting the drawback that promotes heat-insulation cage 3 cooling generation side heat radiations, and present method flow that can control water coolant controls the speed of cooling, for the crystal growth provides reasonable temperature field environment.And anneal cooling in, be also can control cooling water flow to control cooling rate, thereby obtain the annealing conditions of optimizing, be conducive to the release of silicon ingot built-in thermal stress, improve the yield rate of silicon chip.
[embodiment 2]
As Fig. 2, the structure of the present embodiment and embodiment 1 are basically identical, and difference is between aqueous cold plate 13 and bottom heater 7 to be provided with the adiabatic felt 8 that solidifies, the adiabatic effectively intercept heat going down of felt 8 that solidifies, reduce energy consumption, guarantee the heats of bottom heater 7.
[embodiment 3]
As Fig. 3, the structure of the present embodiment and embodiment 2 are basically identical, difference is that the upper and lower surface of bottom heater 7 all is covered with one deck cubic boron nitride 12, cubic boron nitride 12 is thermal conductivity good insulating bodies, not only can effectively stop the bottom heater 7 of graphite to form circuit with the board 3 of graphite, can also guarantee effectively evenly transmitting of heat.
Claims (8)
1. a water refrigeration ingot furnace, comprise body of heater (1), be arranged on the heat-insulation cage (3) in body of heater and be arranged on heat exchange platform (11) in heat-insulation cage (3), be placed with a crucible (4) on described heat exchange platform (11), top and the surrounding of described crucible (4) are distributed with well heater, the lower end of heat exchange platform (11) is provided with bottom heater (7), it is characterized in that: the lower end of described heat exchange platform (11) is provided with aqueous cold plate (13), and aqueous cold plate (13) is positioned at the lower end of bottom heater (7), establish the stream chamber in aqueous cold plate (13), and water-in (9) and water outlet (10) be set, water-in (9) and water outlet (10) are communicated with by the stream chamber, water-in (9) and water outlet (10) also are communicated with respectively body of heater (1) outer end.
2. a kind of water refrigeration ingot furnace according to claim 1, is characterized in that, is provided with the adiabatic felt (8) that solidifies between described aqueous cold plate (13) and bottom heater (7).
3. a kind of water refrigeration ingot furnace according to claim 1 and 2, is characterized in that, the upper and lower surface of described bottom heater (7) all is covered with one deck cubic boron nitride (12).
4. a kind of water refrigeration ingot furnace according to claim 1, it is characterized in that, described heat exchange platform (11) is fixed by pillar (14), one end of described pillar (14) is arranged on the bottom surface of heat exchange platform (11), and the other end is arranged on the bottom of body of heater (1) through heat-insulation cage (3).
5. a kind of water refrigeration ingot furnace according to claim 1, is characterized in that, the periphery of described crucible (4) and lower end are provided with graphite backplate (5).
6. a kind of water refrigeration ingot furnace according to claim 1, is characterized in that, described heat exchange platform (11) adopts graphite to make.
7. a kind of water refrigeration ingot furnace according to claim 1, is characterized in that, the top of described crucible (4), the well heater of surrounding and bottom heater (7) all adopt graphite to make.
8. the casting ingot process of water refrigeration ingot furnace, comprise vacuumizing phase, heating phase, fusion stage, long brilliant stage, annealing and cooling stages, it is characterized in that, when the long brilliant stage, close bottom heater (7), the fetch boiling water gate of the water-in (9) on cold dish (13) and the gate of water outlet (10), pass into water coolant to aqueous cold plate (13), crucible (4) is carried out cooling, wherein the temperature of water coolant remains on 24 ℃, its flow is 100-500L/m, until long crystalline substance completes; When annealing and cooling stages, continue to pass into water coolant to aqueous cold plate (13), and the control cooling water flow is 120-130L/m.
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Cited By (7)
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| CN103741205A (en) * | 2014-01-28 | 2014-04-23 | 安徽大晟新能源设备科技有限公司 | Full monocrystalline silicon ingot casting furnace |
| CN103741207A (en) * | 2013-12-19 | 2014-04-23 | 江苏吉星新材料有限公司 | High-quality crystal growth method |
| CN107523865A (en) * | 2017-09-28 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of energy-saving and high efficient polycrystalline silicon ingot or purifying furnace for orienting water-cooling |
| CN109023519A (en) * | 2018-08-14 | 2018-12-18 | 晶科能源有限公司 | Ingot furnace |
| CN109097831A (en) * | 2018-10-30 | 2018-12-28 | 浙江羿阳太阳能科技有限公司 | A kind of the polycrystal silicon ingot pouring device and casting method of efficient photoelectricity treater conversion ratio |
| CN109137067A (en) * | 2018-10-30 | 2019-01-04 | 浙江羿阳太阳能科技有限公司 | A kind of polycrystal silicon ingot pouring device and casting method |
| CN110184651A (en) * | 2019-07-17 | 2019-08-30 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103741207A (en) * | 2013-12-19 | 2014-04-23 | 江苏吉星新材料有限公司 | High-quality crystal growth method |
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| CN107523865A (en) * | 2017-09-28 | 2017-12-29 | 浙江晶盛机电股份有限公司 | A kind of energy-saving and high efficient polycrystalline silicon ingot or purifying furnace for orienting water-cooling |
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| CN109137067A (en) * | 2018-10-30 | 2019-01-04 | 浙江羿阳太阳能科技有限公司 | A kind of polycrystal silicon ingot pouring device and casting method |
| CN110184651A (en) * | 2019-07-17 | 2019-08-30 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace |
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Application publication date: 20131218 |