CN103225106A - Thermal field for casting high-efficiency polycrystalline - Google Patents
Thermal field for casting high-efficiency polycrystalline Download PDFInfo
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- CN103225106A CN103225106A CN 201310002323 CN201310002323A CN103225106A CN 103225106 A CN103225106 A CN 103225106A CN 201310002323 CN201310002323 CN 201310002323 CN 201310002323 A CN201310002323 A CN 201310002323A CN 103225106 A CN103225106 A CN 103225106A
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Abstract
The invention discloses a thermal field for casting high-efficiency polycrystalline. The thermal field comprises a graphite heat exchange bench and a thermal insulation plate below the graphite heat exchange bench. The thermal insulation plate comprises multiple independently-movable small thermal insulation plate pieces. Through utilization of the multiple independently-movable small thermal insulation plate pieces, the distance between the thermal insulation plate and the graphite heat exchange bench can be adjusted according to different zone temperatures. Through the adjustment of the distance, heat distribution in silicon ingot crystallization can be changed; the uniformity of thermal field temperatures in ingot casting furnace crystallization is guaranteed; and polysilicon ingot quality is improved.
Description
Technical field
The invention belongs to the solar-photovoltaic technology field, relate to the polycrystalline ingot furnace and cast the efficient polycrystalline thermal field of the casting of using in the efficient polycrystalline.
Background technology
The crystal silicon battery generating mainly comprises following industrial chain: primary polysilicon → silicon chip → battery sheet → assembly → system power station, what people pursued under the same conditions is to access more electric energy, according to this target, in the industrial chain production process, every section all needs to obtain better starting material, the present invention relates to the production of efficient polycrystal silicon ingot.
Crystalline silicon mainly comprises silicon single crystal and polysilicon, because the manufacturing cost of polycrystal silicon ingot is far below silicon single crystal rod, so the casting polycrystalline silicon preparation that is applied to solar cell more and more widely.
The casting polycrystalline silicon sheet mainly adopts the polycrystalline foundry furnace at present, and the polycrystalline foundry furnace is based on directional freeze (DSS), and the DSS growth method mainly comprises following steps: heat fused, long crystalline substance, annealing, cooling.Because the temperature of thermal field skewness, cause the solid-liquid interface curve injustice of silicon ingot in the long brilliant process, and also can preferred growth near crucible edge section silicon ingot, form the inside bossing in side, cause edge silicon ingot quality to be lower than the middle part.For addressing this problem, by design to the heat insulation bottom board of crucible heat exchange platform bottom, can the brilliant process of balanced ingot casting furnace superintendent in the uniformity coefficient of temperature of thermal field, improve the quality of polycrystal silicon ingot.
Summary of the invention
Goal of the invention: the objective of the invention is in order to solve the deficiencies in the prior art, a kind of efficient polycrystalline thermal field of casting that can change temperature of thermal field uniformity coefficient in the long brilliant process is provided.
Technical scheme: in order to realize above purpose, the efficient polycrystalline thermal field of a kind of casting of the present invention comprises: graphite heat exchange platform, and described graphite heat exchange platform has thermal baffle; But described thermal baffle is made of the fritter thermal baffle of polylith self-movement.But adopt the fritter thermal baffle of polylith self-movement among the present invention, make thermal baffle according to different regional temperature adjustment thermal baffles and the distance between the graphite heat exchange platform, by adjusting distance, changed the heat distribution in the long brilliant process of silicon ingot, the balanced uniformity coefficient of temperature of thermal field in the brilliant process of ingot casting furnace superintendent improves the quality of polycrystal silicon ingot.
The below of thermal baffle described in the present invention is provided with mobile layer.Be covered with the hole that can feed heat-eliminating medium on the described mobile layer.The thermal baffle bottom has the mobile layer of hole, by in hole, feeding heat-eliminating medium, take away the unnecessary heat that produces, can effectively change the heat distribution in the long brilliant process of silicon ingot, obtain needed desirable solid-liquid interface shape, reach the purpose of making efficient polycrystal silicon ingot.
Thermal baffle described in the present invention preferably is made of from inside to outside three fritter thermal baffles; These three fritter thermal baffles are respectively: thermal baffle A, thermal baffle B and thermal baffle C; Thermal baffle A is positioned at the innermost layer; Thermal baffle B is positioned at thermal baffle A skin; Described thermal baffle C is positioned at thermal baffle B skin.
The thermal baffle of fritter described in the present invention is for being preferably: square is circular or oval.
Twining the heat-insulation and heat-preservation felt around the heat exchange of graphite described in the present invention platform; The heat that the use of this heat-insulation and heat-preservation felt can reduce the transverse temperature in the long brilliant process scatters and disappears, and makes thermal field to dispel the heat vertically downward; Can suppress horizontal grain growing effectively, obtain good styloid.
Beneficial effect: the present invention compared with prior art has the following advantages:
1, among the present invention by the mobile layer of mobilizable thermal baffle and thermal baffle below is set, regulated the temperature distribution in the long brilliant process, make the solid-liquid interface of silicon ingot straight, crystal grain can be vertical upwards growth, improve the quality of polycrystal silicon ingot;
2, among the present invention by twining the heat-insulation and heat-preservation felt around the graphite heat exchange platform, the horizontal heat that can reduce silicon ingot scatters and disappears, to vertical more uniform styloid.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the synoptic diagram in the embodiment of the invention.
Fig. 3 is the synoptic diagram in the embodiment of the invention.
Fig. 4 is a kind of novel heat-insulation plate vertical view.
Fig. 5 is a kind of novel heat-insulation plate vertical view.
Fig. 6 is an existing and novel temperature of thermal field curve contrast.
Embodiment
Below in conjunction with specific embodiment, further illustrate the present invention, should understand these embodiment only is used to the present invention is described and is not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
The efficient polycrystalline thermal field of a kind of casting comprises: heat-insulation cage 1, well heater 2, graphite heat exchange platform 3, heat-insulation and heat-preservation felt 4, thermal baffle 5, mobile layer 6; Described graphite heat exchange platform has thermal baffle 5; Described thermal baffle 5 is made of from inside to outside three fritter thermal baffles; Three fritter thermal baffles are respectively: thermal baffle A, thermal baffle B and thermal baffle C; Thermal baffle A is positioned at the innermost layer; Thermal baffle B is positioned at thermal baffle A skin; Described thermal baffle C is positioned at thermal baffle B skin; Described fritter thermal baffle is square (as shown in Figure 4) or circular (as shown in Figure 5).
Above-mentioned each position component relation is as follows:
Heat-insulation cage 1 is made up of outer steelframe and internal layer graphite warming plate, forms insulating; Thermal insulation layer inside has well heater 2, graphite heat exchange platform 3 is arranged at the thermal insulation layer bottom, there is heat-insulation and heat-preservation felt 4 to center on around the graphite heat exchange platform, the thermal baffle 5 that can be close to the bottom is arranged at graphite heat exchange platform bottom, described thermal baffle 5 belows are provided with mobile layer 6, are covered with the hole 7 that can feed heat-eliminating medium on the described mobile layer 6.In different steps,, can adjust the temperature distribution of silicon ingot bottom arbitrarily by adjusting thermal baffle 5 trilaminar movement positions and changing the cooling medium consumption in the hole 7 in the mobile layer 6.
Three kinds of working ordeies of present embodiment are as follows:
Working order one,
In the long brilliant stage, thermal baffle A, thermal baffle B, thermal baffle C are square structure in the thermal baffle at silicon ingot, and as shown in Figure 4, the width of thermal baffle A, thermal baffle B, thermal baffle C is 23cm, 68cm, 114cm respectively, and thickness is 4cm.In long brilliant process, thermal baffle A is 0cm apart from graphite heat exchange platform, and thermal baffle B is 5cm apart from graphite heat exchange platform distance, and thermal baffle C is 0cm apart from graphite heat exchange platform distance; Hole in the graphite linings feeds cold gas respectively, and the flow set of thermal baffle A bottom is 10L/min, and thermal baffle B bottom rate is 20L/min, and thermal baffle C bottom rate is 15L/min.Growth obtains efficient polycrystal silicon ingot under this condition.
Working order two
In the long brilliant stage, thermal baffle A is a circular configuration in the thermal baffle at silicon ingot; Thermal baffle B and thermal baffle A contact surface are circle, contact with thermal baffle C to be square, and as shown in Figure 5, the width of thermal baffle A, thermal baffle B, thermal baffle C is 30cm, 70cm, 114cm respectively, and thickness is 5cm.In long brilliant process, wherein thermal baffle A is 8cm apart from graphite heat exchange platform, and thermal baffle B is 2cm apart from graphite heat exchange platform distance, and thermal baffle C is 6cm apart from graphite heat exchange platform distance; Hole in the graphite linings feeds cold gas respectively, and the flow set of thermal baffle A bottom is 15L/min, and thermal baffle B bottom rate is 10L/min, and thermal baffle C bottom rate is 20L/min.Growth obtains efficient polycrystal silicon ingot under this condition.
Working order three,
In the long brilliant stage, thermal baffle A, thermal baffle B, thermal baffle C are square structure in the thermal baffle at silicon ingot, and the width of thermal baffle A, thermal baffle B, thermal baffle C is respectively 20cm, 75cm, 114cm, and thickness is 4cm.In long brilliant process, thermal baffle A is 10cm apart from graphite heat exchange platform, and thermal baffle B is 12cm apart from graphite heat exchange platform distance, and thermal baffle C is 8cm apart from graphite heat exchange platform distance; Hole in the graphite linings feeds cooling fluid respectively, and the coolant rate of thermal baffle A bottom is set to 2L/min, and the coolant rate of thermal baffle B bottom is 5L/min, and the coolant rate of thermal baffle C bottom is 3L/min.Growth obtains efficient polycrystal silicon ingot under this condition.
In above-mentioned example,, obtain different solid-liquid interface of different fusion stages by adjusting thermal baffle A, the position of thermal baffle B, thermal baffle C and the cooling medium consumption in the mobile layer.Fig. 6 is the new and old thermal field comparison diagram of long brilliant height same position temperature curve in the present embodiment.
Claims (6)
1. cast efficient polycrystalline thermal field for one kind, comprising: graphite heat exchange platform is characterized in that: described heat exchange platform has thermal baffle (5); Described thermal baffle (5) but constitute by the fritter thermal baffle of polylith self-movement.
2. the efficient polycrystalline thermal field of casting according to claim 1 is characterized in that: described thermal baffle (5) below is provided with mobile layer (6).
3. the efficient polycrystalline thermal field of casting according to claim 2 is characterized in that: be covered with the hole (7) that can feed heat-eliminating medium on the described mobile layer (6).
4. the efficient polycrystalline thermal field of casting according to claim 1 is characterized in that: described thermal baffle (5) is by three fritter thermal baffles: thermal baffle A, thermal baffle B and thermal baffle C constitute from inside to outside; Thermal baffle A is positioned at the innermost layer; Thermal baffle B is positioned at thermal baffle A skin; Described thermal baffle C is positioned at thermal baffle B skin.
5. the efficient polycrystalline thermal field of casting according to claim 1 is characterized in that: described fritter thermal baffle is square, or circular, or oval.
6. the efficient polycrystalline thermal field of casting according to claim 1 is characterized in that: twining heat-insulation and heat-preservation felt (4) around the described graphite heat exchange platform.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310002323.XA CN103225106B (en) | 2013-01-06 | 2013-01-06 | A kind of thermal field casting high-efficiency polycrystalline |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310002323.XA CN103225106B (en) | 2013-01-06 | 2013-01-06 | A kind of thermal field casting high-efficiency polycrystalline |
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| CN103225106A true CN103225106A (en) | 2013-07-31 |
| CN103225106B CN103225106B (en) | 2015-07-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN103614770A (en) * | 2013-11-20 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Novel ingot furnace and production technology using ingot furnace |
| CN108362131A (en) * | 2018-04-08 | 2018-08-03 | 通威太阳能（安徽）有限公司 | A kind of sintering furnace subregion heat insulation pedestal |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4673459B2 (en) * | 1999-05-07 | 2011-04-20 | イビデン株式会社 | Thermal insulation cylinder for single crystal pulling apparatus and single crystal pulling apparatus |
| CN102140672B (en) * | 2011-03-15 | 2012-12-26 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof |
| CN102828228B (en) * | 2011-06-16 | 2015-07-08 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN203065633U (en) * | 2013-01-06 | 2013-07-17 | 奥特斯维能源（太仓）有限公司 | Thermal field of efficient cast polycrystal |
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2013
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN103614770A (en) * | 2013-11-20 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Novel ingot furnace and production technology using ingot furnace |
| CN108362131A (en) * | 2018-04-08 | 2018-08-03 | 通威太阳能（安徽）有限公司 | A kind of sintering furnace subregion heat insulation pedestal |
| CN108362131B (en) * | 2018-04-08 | 2023-05-23 | 通威太阳能（安徽）有限公司 | Partition heat insulation base of sintering furnace |
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| CN103225106B (en) | 2015-07-29 |
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