CN103225106B - A kind of thermal field casting high-efficiency polycrystalline - Google Patents
A kind of thermal field casting high-efficiency polycrystalline Download PDFInfo
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- CN103225106B CN103225106B CN201310002323.XA CN201310002323A CN103225106B CN 103225106 B CN103225106 B CN 103225106B CN 201310002323 A CN201310002323 A CN 201310002323A CN 103225106 B CN103225106 B CN 103225106B
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Abstract
The invention discloses a kind of thermal field casting high-efficiency polycrystalline, comprising: graphite thermal board, described graphite thermal board has thermal baffle; Described thermal baffle can the fritter thermal baffle of self-movement be made up of polylith.Adopt polylith can the fritter thermal baffle of self-movement in the present invention, make thermal baffle according to the distance between different regional temperatures adjustment thermal baffle and graphite thermal board, by adjustment distance, change the heat distribution in the long brilliant process of silicon ingot, in the balanced brilliant process of ingot casting furnace superintendent, the uniformity coefficient of temperature of thermal field, improves the quality of polycrystal silicon ingot.
Description
Technical field
The invention belongs to solar-photovoltaic technology field, relate to the thermal field of the casting high-efficiency polycrystalline used in polycrystalline ingot furnace casting high-efficiency polycrystalline.
Background technology
Crystal silicon battery generating mainly comprises following industrial chain: virgin polycrystalline silicon → silicon chip → cell piece → assembly → system power station, what people pursued under the same conditions is to obtain more electric energy, according to this target, in industrial chain production process, every section all needs to obtain better starting material, the present invention relates to the production of efficient polycrystalline silicon ingot.
Crystalline silicon mainly comprises silicon single crystal and polysilicon, and because the manufacturing cost of polycrystal silicon ingot is far below silicon single crystal rod, therefore casting polycrystalline silicon is more and more widely used in the preparation of solar cell.
Current casting polycrystalline silicon sheet mainly adopts polycrystalline foundry furnace, and polycrystalline foundry furnace is based on directional freeze (DSS), and DSS growth method mainly comprises following steps: heat fused, long crystalline substance, annealing, cooling.Due to temperature of thermal field skewness in long brilliant process, cause the solid-liquid interface curve of silicon ingot uneven, and also can preferred growth near crucible edge section silicon ingot, form the bossing that side is inside, cause edge Ingot quality lower than middle part.For addressing this problem, by the design of the heat insulation bottom board to crucible heat exchange platform bottom, can the uniformity coefficient of temperature of thermal field in the brilliant process of balanced ingot casting furnace superintendent, improve the quality of polycrystal silicon ingot.
Summary of the invention
Goal of the invention: the object of the invention is to solve the deficiencies in the prior art, provides a kind of thermal field that can change the casting high-efficiency polycrystalline of temperature of thermal field uniformity coefficient in long brilliant process.
Technical scheme: in order to realize above object, a kind of thermal field casting high-efficiency polycrystalline of the present invention, comprising: graphite thermal board, and described graphite thermal board has thermal baffle; Described thermal baffle can the fritter thermal baffle of self-movement be made up of polylith.Adopt polylith can the fritter thermal baffle of self-movement in the present invention, make thermal baffle according to the distance between different regional temperatures adjustment thermal baffle and graphite thermal board, by adjustment distance, change the heat distribution in the long brilliant process of silicon ingot, in the balanced brilliant process of ingot casting furnace superintendent, the uniformity coefficient of temperature of thermal field, improves the quality of polycrystal silicon ingot.
Mobile layer is provided with below thermal baffle described in the present invention.Described mobile layer is covered with the hole that can pass into heat-eliminating medium.The pertusate mobile layer of thermal baffle bottom tool, by passing into heat-eliminating medium in hole, taking away produced unnecessary heat, effectively can change the heat distribution in the long brilliant process of silicon ingot, obtain required desirable solid-liquid interface shape, reach the object making efficient polycrystalline silicon ingot.
Thermal baffle described in the present invention is preferably made up of from inside to outside three pieces of fritter thermal baffles; These three pieces of fritter thermal baffles are respectively: thermal baffle A, thermal baffle B and thermal baffle C; Thermal baffle A is positioned at innermost layer; It is outer that thermal baffle B is positioned at thermal baffle A; It is outer that described thermal baffle C is positioned at thermal baffle B.
The thermal baffle of fritter described in the present invention is for being preferably: square is circular or oval.
Heat-insulation and heat-preservation felt is wrapped around the board of graphite thermal described in the present invention; The use of this heat-insulation and heat-preservation felt can reduce the heat loss of the transverse temperature in long brilliant process, and thermal field can be dispelled the heat vertically downward; Can effectively suppress horizontal grain growing, obtain excellent styloid.
Beneficial effect: the present invention compared with prior art has the following advantages:
1, in the present invention by arranging the mobile layer below mobilizable thermal baffle and thermal baffle, have adjusted the temperature distribution in long brilliant process, make the solid-liquid interface of silicon ingot straight, the upwards growth that crystal grain can be vertical, improve the quality of polycrystal silicon ingot;
2, pass through in the present invention to be wound around heat-insulation and heat-preservation felt around graphite thermal board, the horizontal heat loss of silicon ingot can be reduced, to longitudinal more uniform styloid.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the schematic diagram in the embodiment of the present invention.
Fig. 3 is the schematic diagram in the embodiment of the present invention.
Fig. 4 is a kind of thermal insulation board vertical view.
Fig. 5 is a kind of thermal insulation board vertical view.
Fig. 6 is that an existing and novel thermal field temperature curve contrasts.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Cast a thermal field for high-efficiency polycrystalline, comprising: heat-insulation cage 1, well heater 2, graphite thermal board 3, heat-insulation and heat-preservation felt 4, thermal baffle 5, mobile layer 6; Described graphite thermal board has thermal baffle 5; Described thermal baffle 5 is made up of from inside to outside three pieces of fritter thermal baffles; Three pieces of fritter thermal baffles are respectively: thermal baffle A, thermal baffle B and thermal baffle C; Thermal baffle A is positioned at innermost layer; It is outer that thermal baffle B is positioned at thermal baffle A; It is outer that described thermal baffle C is positioned at thermal baffle B; Described fritter thermal baffle is square (as shown in Figure 4) or circular (as shown in Figure 5).
The position relationship of above-mentioned each parts is as follows:
Heat-insulation cage 1 is made up of outer steelframe and internal layer graphite insulation board, forms insulating; Thermal insulation layer inside has well heater 2, graphite thermal board 3 is arranged at thermal insulation layer bottom, graphite thermal board surrounding have heat-insulation and heat-preservation felt 4 around, the thermal baffle 5 can being close to bottom is arranged at graphite thermal board bottom, be provided with mobile layer 6 below described thermal baffle 5, described mobile layer 6 be covered with the hole 7 that can pass into heat-eliminating medium.In different steps, by the movement position that adjusts thermal baffle 5 three layers and the cooling medium consumption changed in mobile layer 6 Hole 7, the temperature distribution bottom silicon ingot can be adjusted arbitrarily.
Three kinds of working ordeies of the present embodiment are as follows:
Working order one,
In the silicon ingot long brilliant stage, in thermal baffle, thermal baffle A, thermal baffle B, thermal baffle C are square structure, and as shown in Figure 4, width 23cm, 68cm, 114cm respectively of thermal baffle A, thermal baffle B, thermal baffle C, thickness is 4cm.In long brilliant process, thermal baffle A is 0cm apart from graphite thermal board, and thermal baffle B is 5cm apart from graphite thermal board distance, and thermal baffle C is 0cm apart from graphite thermal board distance; Hole in graphite linings passes into cold gas respectively, and the flow set bottom thermal baffle A is 10L/min, and thermal baffle B bottom rate is 20L/min, and thermal baffle C bottom rate is 15L/min.Growth obtains efficient polycrystalline silicon ingot under these conditions.
Working order two
In the silicon ingot long brilliant stage, in thermal baffle, thermal baffle A is circular configuration; Thermal baffle B and thermal baffle A contact surface are circle, contact as square with thermal baffle C, and as shown in Figure 5, width 30cm, 70cm, 114cm respectively of thermal baffle A, thermal baffle B, thermal baffle C, thickness is 5cm.In long brilliant process, wherein thermal baffle A is 8cm apart from graphite thermal board, and thermal baffle B is 2cm apart from graphite thermal board distance, and thermal baffle C is 6cm apart from graphite thermal board distance; Hole in graphite linings passes into cold gas respectively, and the flow set bottom thermal baffle A is 15L/min, and thermal baffle B bottom rate is 10L/min, and thermal baffle C bottom rate is 20L/min.Growth obtains efficient polycrystalline silicon ingot under these conditions.
Working order three,
In the silicon ingot long brilliant stage, in thermal baffle, thermal baffle A, thermal baffle B, thermal baffle C are square structure, and the width of thermal baffle A, thermal baffle B, thermal baffle C is respectively 20cm, 75cm, 114cm, and thickness is 4cm.In long brilliant process, thermal baffle A is 10cm apart from graphite thermal board, and thermal baffle B is 12cm apart from graphite thermal board distance, and thermal baffle C is 8cm apart from graphite thermal board distance; Hole in graphite linings passes into cooling fluid respectively, and the coolant rate bottom thermal baffle A is set to 2L/min, and the coolant rate bottom thermal baffle B is 5L/min, and the coolant rate bottom thermal baffle C is 3L/min.Growth obtains efficient polycrystalline silicon ingot under these conditions.
In the above-described example, by the cooling medium consumption in the position of adjustment thermal baffle A, thermal baffle B, thermal baffle C and mobile layer, obtain different solid-liquid interface of different fusion stages.Fig. 6 is the new and old thermal field comparison diagram of long brilliant height same position temperature curve in the present embodiment.
Claims (5)
1. cast a thermal field for high-efficiency polycrystalline, comprising: graphite thermal board, is characterized in that: described heat exchange platform has thermal baffle (5); Described thermal baffle (5) can the fritter thermal baffle of self-movement be formed by three pieces: thermal baffle A, thermal baffle B and thermal baffle C are formed from inside to outside; Thermal baffle A is positioned at innermost layer; It is outer that thermal baffle B is positioned at thermal baffle A; It is outer that described thermal baffle C is positioned at thermal baffle B.
2. the thermal field of casting high-efficiency polycrystalline according to claim 1, is characterized in that: described thermal baffle (5) below is provided with mobile layer (6).
3. the thermal field of casting high-efficiency polycrystalline according to claim 2, is characterized in that: described mobile layer (6) is covered with the hole (7) that can pass into heat-eliminating medium.
4. the thermal field of casting high-efficiency polycrystalline according to claim 1, is characterized in that: described fritter thermal baffle is square, or circular, or oval.
5. the thermal field of casting high-efficiency polycrystalline according to claim 1, is characterized in that: be wrapped heat-insulation and heat-preservation felt (4) around described graphite thermal board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310002323.XA CN103225106B (en) | 2013-01-06 | 2013-01-06 | A kind of thermal field casting high-efficiency polycrystalline |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310002323.XA CN103225106B (en) | 2013-01-06 | 2013-01-06 | A kind of thermal field casting high-efficiency polycrystalline |
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| Publication Number | Publication Date |
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| CN103225106A CN103225106A (en) | 2013-07-31 |
| CN103225106B true CN103225106B (en) | 2015-07-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN103614770A (en) * | 2013-11-20 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Novel ingot furnace and production technology using ingot furnace |
| CN108362131B (en) * | 2018-04-08 | 2023-05-23 | 通威太阳能（安徽）有限公司 | Partition heat insulation base of sintering furnace |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4673459B2 (en) * | 1999-05-07 | 2011-04-20 | イビデン株式会社 | Thermal insulation cylinder for single crystal pulling apparatus and single crystal pulling apparatus |
| CN102140672A (en) * | 2011-03-15 | 2011-08-03 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof |
| CN102828228A (en) * | 2011-06-16 | 2012-12-19 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN203065633U (en) * | 2013-01-06 | 2013-07-17 | 奥特斯维能源（太仓）有限公司 | Thermal field of efficient cast polycrystal |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4673459B2 (en) * | 1999-05-07 | 2011-04-20 | イビデン株式会社 | Thermal insulation cylinder for single crystal pulling apparatus and single crystal pulling apparatus |
| CN102140672A (en) * | 2011-03-15 | 2011-08-03 | 杭州精功机电研究所有限公司 | Double-cavity thermal field of crystal silicon ingot casting furnace and control method thereof |
| CN102828228A (en) * | 2011-06-16 | 2012-12-19 | 浙江昱辉阳光能源有限公司 | Polycrystalline ingot furnace and its hot door device |
| CN203065633U (en) * | 2013-01-06 | 2013-07-17 | 奥特斯维能源（太仓）有限公司 | Thermal field of efficient cast polycrystal |
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