CN205443509U - Cooling system of polycrystalline silicon ingot furnace - Google Patents
Cooling system of polycrystalline silicon ingot furnace Download PDFInfo
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- CN205443509U CN205443509U CN201521136901.XU CN201521136901U CN205443509U CN 205443509 U CN205443509 U CN 205443509U CN 201521136901 U CN201521136901 U CN 201521136901U CN 205443509 U CN205443509 U CN 205443509U
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- heat
- guard shield
- heater
- dam
- cooling platform
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Abstract
The utility model discloses a cooling system of polycrystalline silicon ingot furnace, the ingot furnace includes: the furnace body is provided with the aspirating hole on, be provided with the heat preservation guard shield in the furnace body, be provided with the crucible in the heat preservation guard shield, correspond the crucible the graphite guard shield, correspond the hot topping ware and the lateral part heater of graphite guard shield and lie in the heat dissipation platform of graphite guard shield bottom, the heat dissipation platform sets up the horizontal heat dam of round along the thickness orientation at the lower surface, the heat dissipation platform sets up the vertical heat dam of round along width direction at terminal surface all around, it has thermal insulation material all to fill in horizontal heat dam and the vertical heat dam. The utility model discloses a through the upgrading transformation to cooling system to effective control center heat is to transmission all around, and the control heat is to the transmission of four corners, thereby thermally in the middle of having increased gives off efficiency and reduced the thermal efficiency of giving off all around, thus the degree of consistency of effective control heat exchange, the long brilliant degree of consistency of effective control and ingot casting quality.
Description
Technical field
This utility model relates to polycrystalline silicon battery plate production technical field, particularly to a kind of polycrystalline silicon ingot or purifying furnace, the cooling system upgrading of a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
The production process of polycrystalline silicon battery plate includes: crucible spraying → filler → ingot casting → cutting in bulk → line is slit into sheet → cleaning-drying → detection → packaging, wherein, casting polycrystal silicon ingot is one important technique, and the quality of polycrystalline silicon ingot casting will directly affect conversion efficiency and the quality of solaode.
Casting polycrystal silicon ingot, be by filler after crucible be placed in ingot furnace, evacuates through furnace chamber, heat, melt, long crystalline substance, anneal, cool down after, complete the casting of silicon ingot.Wherein, it is to carry out dispelling the heat by the cooling platform of bottom and realize long crystalline substance in long brilliant process, but this cooling platform is smooth tabular cooling platform in the prior art, owing to heat causes heat radiation inequality from centre to the heat radiation of bottom cooling platform and two ends, during long crystalline substance, there will be convex crystal face, form dislocation, depositing contaminants, have impact on polysilicon quality, and to be easy to retain infusible silicon materialization complete four corners, therefore can not reach to produce the effect of whole ingot.
In view of this, how polycrystalline silicon ingot or purifying furnace of the prior art is made improvement, to improve the quality of polycrystalline silicon ingot casting, be current those skilled in the art's technical issues that need to address.
Utility model content
For solving above-mentioned technical problem, this utility model provides the cooling system of a kind of polycrystalline silicon ingot or purifying furnace, to realize the effective control to cooling platform heat dispersion, improves crystal growth quality to improve the quality of polycrystalline silicon ingot casting.
For reaching above-mentioned purpose, the technical solution of the utility model is as follows:
nullA kind of cooling system of polycrystalline silicon ingot or purifying furnace，Described ingot furnace includes: body of heater，It is provided with aspirating hole on described body of heater，It is provided with heat-preservation guard shield in described body of heater，It is provided with crucible in described heat-preservation guard shield、The graphite guard shield of corresponding described crucible、Top heater and the side heater of corresponding described graphite guard shield and be positioned at the cooling platform bottom described graphite guard shield，Described top heater is controlled to realize graphite guard shield top and the external heat of sidepiece by the external heat copper electrode being arranged on described body of heater top with side heater，Described heat-preservation guard shield and cooling platform support by being arranged on the graphite pillar of described bottom of furnace body，Described cooling platform supports described graphite guard shield，Crucible described in the backplanes support of described graphite guard shield，Described cooling platform through-thickness arranges a horizontal heat dam of circle at lower surface，Described cooling platform arranges a circle longitudinal direction heat dam at surrounding end face in the width direction；Described horizontal heat dam is all filled with heat-barrier material in longitudinal heat dam.
Wherein, the depth H 1 of described horizontal heat dam is less than the thickness H of described cooling platform and equal to 1/2nd of described cooling platform thickness H.
Wherein, the degree of depth of described longitudinal heat dam is less than 1/4th of described cooling platform width.
Wherein, the depth H 1 of described horizontal heat dam is less than distance H2 between described longitudinal heat dam and described cooling platform lower surface.
Pass through technique scheme, the polycrystalline silicon ingot or purifying furnace that this utility model provides, it is by the upgrading to cooling system, thus effectively control centre's heat is to the transmission of surrounding, and control the heat transmission to four corners, thus add the emission efficiency of middle heat and reduce the emission efficiency of surrounding heat, thus effectively control the uniformity of heat exchange, effectively control the long brilliant uniformity and improve the ingot quality of polysilicon.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in this utility model embodiment, in describing embodiment below, the required accompanying drawing used is briefly described.
Fig. 1 is the structural representation of the polycrystalline silicon ingot or purifying furnace disclosed in this utility model embodiment；
Fig. 2 is that the cooling platform master disclosed in this utility model embodiment regards sectional structure schematic diagram；
Fig. 3 be the cooling platform disclosed in this utility model embodiment look up structural representation.
In figure, numeral represents:
11. body of heater 12. heat-preservation guard shield 13. graphite pillars
14. cooling platform 15. graphite guard shield 16. top heater
17. side heater 18. external heat copper electrode 19. aspirating holes
The longitudinal heat dam of the 20. horizontal heat dams 22. of crucible 21.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described.
nullWith reference to Fig. 1，The cooling system of the polycrystalline silicon ingot or purifying furnace that this utility model provides，Ingot furnace includes: body of heater 11，Aspirating hole 19 it is provided with on body of heater 11，Heat-preservation guard shield 12 it is provided with in body of heater 11，Crucible 20 it is provided with in heat-preservation guard shield 12、The graphite guard shield 15 of corresponding crucible 20、Top heater 16 and the side heater 17 of corresponding graphite guard shield 15 and be positioned at the cooling platform 14 bottom graphite guard shield 15，Top heater 16 is controlled to realize graphite guard shield 15 top and the external heat of sidepiece by the external heat copper electrode 18 being arranged on body of heater 11 top with side heater 17，Heat-preservation guard shield 12 and cooling platform 14 support by being arranged on the graphite pillar 13 bottom body of heater 11，Cooling platform 14 supports graphite guard shield 15，The backplanes support crucible 20 of graphite guard shield 15.
With reference to Fig. 2 and 3, it is heat insulation to realize horizontal cross that cooling platform 14 through-thickness arranges a horizontal heat dam of circle 21 at lower surface, and it is the most heat insulation to realize that cooling platform 14 arranges a circle longitudinal direction heat dam 22 at surrounding end face in the width direction；Laterally heat dam 21 is all filled with heat-barrier material in longitudinal heat dam 22；Wherein, laterally the depth H 1 of heat dam 21 is less than the thickness H of cooling platform 14 and equal to 1/2nd of cooling platform 14 thickness H, the degree of depth of longitudinal heat dam 22 is less than 1/4th of cooling platform 14 width, and the depth H 1 of horizontal heat dam 21 is less than distance H2 between longitudinal heat dam 22 and cooling platform 14 lower surface.
The polycrystalline silicon ingot or purifying furnace that this utility model provides, it is by the upgrading to cooling system, thus effectively control centre's heat is to the transmission of surrounding, and control the heat transmission to four corners, thus add the emission efficiency of middle heat and reduce the emission efficiency of surrounding heat, thus effectively control the uniformity of heat exchange, effectively control the long brilliant uniformity and improve the ingot quality of polysilicon.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses this utility model.Multiple amendment to these embodiments will be apparent from for those skilled in the art, and generic principles defined herein can realize in the case of without departing from spirit or scope of the present utility model in other embodiments.Therefore, this utility model is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (4)
- null1. the cooling system of a polycrystalline silicon ingot or purifying furnace，Described ingot furnace includes: body of heater，It is provided with aspirating hole on described body of heater，It is provided with heat-preservation guard shield in described body of heater，It is provided with crucible in described heat-preservation guard shield、The graphite guard shield of corresponding described crucible、Top heater and the side heater of corresponding described graphite guard shield and be positioned at the cooling platform bottom described graphite guard shield，Described top heater is controlled to realize graphite guard shield top and the external heat of sidepiece by the external heat copper electrode being arranged on described body of heater top with side heater，Described heat-preservation guard shield and cooling platform support by being arranged on the graphite pillar of described bottom of furnace body，Described cooling platform supports described graphite guard shield，Crucible described in the backplanes support of described graphite guard shield，It is characterized in that，Described cooling platform through-thickness arranges a horizontal heat dam of circle at lower surface，Described cooling platform arranges a circle longitudinal direction heat dam at surrounding end face in the width direction；Described horizontal heat dam is all filled with heat-barrier material in longitudinal heat dam.
- The cooling system of polycrystalline silicon ingot or purifying furnace the most according to claim 1, it is characterised in that the depth H 1 of described horizontal heat dam is less than the thickness H of described cooling platform and equal to 1/2nd of described cooling platform thickness H.
- The cooling system of polycrystalline silicon ingot or purifying furnace the most according to claim 2, it is characterised in that the degree of depth of described longitudinal heat dam is less than 1/4th of described cooling platform width.
- The cooling system of polycrystalline silicon ingot or purifying furnace the most according to claim 3, it is characterised in that the depth H 1 of described horizontal heat dam is less than distance H2 between described longitudinal heat dam and described cooling platform lower surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136901.XU CN205443509U (en) | 2015-12-31 | 2015-12-31 | Cooling system of polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136901.XU CN205443509U (en) | 2015-12-31 | 2015-12-31 | Cooling system of polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205443509U true CN205443509U (en) | 2016-08-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521136901.XU Expired - Fee Related CN205443509U (en) | 2015-12-31 | 2015-12-31 | Cooling system of polycrystalline silicon ingot furnace |
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| Country | Link |
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| CN (1) | CN205443509U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107236988A (en) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | A kind of polycrystalline air cooling silicon ingot furnace |
-
2015
- 2015-12-31 CN CN201521136901.XU patent/CN205443509U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107236988A (en) * | 2017-07-12 | 2017-10-10 | 晶科能源有限公司 | A kind of polycrystalline air cooling silicon ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160810 Termination date: 20171231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |