CN204898122U - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
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- CN204898122U CN204898122U CN201520654653.1U CN201520654653U CN204898122U CN 204898122 U CN204898122 U CN 204898122U CN 201520654653 U CN201520654653 U CN 201520654653U CN 204898122 U CN204898122 U CN 204898122U
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- furnace body
- polycrystalline silicon
- silicon ingot
- thermal insulation
- insulation layer
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Abstract
The utility model discloses a polycrystalline silicon ingot furnace, including furnace body, crucible, vacuum apparatus, heating device, backup pad, elevating gear, the furnace body includes furnace body and lower furnace body, be equipped with the heat preservation down in the furnace body, be provided with in the heat preservation heating device, still be equipped with more than 2 in the furnace body down elevating gear, elevating gear is last to be equipped with the backup pad, be equipped with in the backup pad the crucible, vacuum apparatus locates lower furnace body one side, and with the furnace body passes through the vacuum line connection down. The utility model discloses well elevating gear's setting is convenient for the crucible and is risen, is descended for after accomplishing long brilliant, annealing stage under in the furnace body, furnace body in the entering cools off again, thereby obtains the polycrystalline silicon ingot casting. The utility model discloses an at heat preservation installation electrode for the temperature is even in the furnace body down, has eliminated the blind area, has avoided the waste of ore resource, has reduced the energy consumption simultaneously.
Description
Technical field
The utility model relates to polysilicon production process field, particularly relates to a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
At present, polycrystalline silicon ingot or purifying furnace is mainly used in producing silicon semiconductor material with ingot ways, and traditional polycrystalline silicon ingot or purifying furnace is made up of body of heater and bell, usual bell is positioned at body of heater upper end, heating unit is distributed in around the crucible of burner hearth, there is temperature distributing disproportionation, the problem that handling material is inconvenient.
Utility model content
In view of this, the utility model proposes a kind of polycrystalline silicon ingot or purifying furnace, this polycrystalline silicon ingot or purifying furnace solves temperature distributing disproportionation in body of heater, the technical problem that handling material is inconvenient.
The technical solution of the utility model is achieved in that
A kind of polycrystalline silicon ingot or purifying furnace, comprises body of heater, crucible, vacuum unit, heating unit, back up pad, lifting device;
Described body of heater comprises upper furnace body and lower furnace body;
Be provided with thermal insulation layer in described lower furnace body, in described thermal insulation layer, be provided with described heating unit;
Also be provided with the described lifting device of more than 2 in described lower furnace body, described lifting device is provided with described back up pad, and described back up pad is provided with described crucible;
Described vacuum unit is located at outside described lower furnace body, and is connected by vacuum-lines with described lower furnace body.
Preferably, described thermal insulation layer comprises the first thermal insulation layer and the second thermal insulation layer.
Preferably, described first thermal insulation layer is fire resistant heat preserving layer of fibers, and described second thermal insulation layer is graphite carbon brick layer.
Preferably, described heating unit is electrode, and described electrode symmetry is arranged in described second thermal insulation layer.
Preferably, described heating unit is Graphite Electrodes.
Preferably, 5 ~ 50 lifting devices are provided with in described lower furnace body.
Preferably, described upper furnace body is provided with top cover, described top cover is provided with the import of protection gas.
Preferably, sealing cover is connected with between described upper furnace body and described lower furnace body.
Preferably, also comprise controlling organization, described controlling organization is connected with described sealing cover.
Preferably, also comprise refrigerating unit, described refrigerating unit is arranged in described upper furnace body.
The beneficial effects of the utility model are:
In the utility model, the setting of lifting device is convenient to crucible rising, is declined, and after making to complete long crystalline substance, annealing stage in lower furnace body, enters upper furnace body, then cools, thus obtain polycrystalline silicon ingot casting.The utility model, by thermal insulation layer installing electrodes, makes homogeneous temperature in lower furnace body, eliminates blind area, avoid the waste of ore resource, reduce energy consumption simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the utility model polycrystalline silicon ingot or purifying furnace.
In figure:
1, upper furnace body; 2, lower furnace body; 3, the first thermal insulation layer; 4, the second thermal insulation layer; 5, lifting device; 6, back up pad; 7, crucible; 8, heating unit; 9, sealing cover; 10, vacuum unit; 101, vacuum-lines; 11, top cover.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1, the polycrystalline silicon ingot or purifying furnace that the utility model provides, comprises body of heater, crucible 7, heating unit 8, back up pad 6, lifting device 5 and vacuum unit 10.
Described body of heater comprises upper furnace body 1 and lower furnace body 2, and described upper furnace body 1, for cooling polycrystalline silicon ingot casting, when specifically implementing, is provided with refrigerating unit in described upper furnace body 1.
Be provided with thermal insulation layer in described lower furnace body 2, described thermal insulation layer is arranged in described lower furnace body 2, for reducing heat losses in lower furnace body 2, thus ensures the heat-insulating property of polycrystalline silicon ingot or purifying furnace.During concrete enforcement, thermal insulation layer comprises the first thermal insulation layer 3 and the second thermal insulation layer 4, first thermal insulation layer 3 is fire resistant heat preserving layer of fibers, second thermal insulation layer 4 is graphite carbon brick layer, successively be incubated by adopting refractory masses and graphite carbon brick layer, its thermal conduction is reduced gradually, and then ensure that the heat-insulating property of polycrystalline silicon ingot or purifying furnace.
Also be provided with more than 2 lifting devices in described lower furnace body 2, lifting device 5 is provided with back up pad 6, and back up pad 6 is provided with crucible 7, and described crucible 7 is for holding Pure Silicon Metal; Described back up pad 6, for support crucible 7 and Pure Silicon Metal thereof, ensures the stability of crucible 7; Described lifting device 5 is convenient to crucible 7 and is risen, declines, and after making Pure Silicon Metal complete long crystalline substance, annealing clearing in lower furnace body 2, enters upper furnace body 1, then cools, thus obtain polycrystalline silicon ingot casting.Crucible 7 is conveniently put into or taken out to arranging of lifting device 5 in addition, when specifically implementing, is provided with 5 ~ 50 lifting devices 5 in described lower furnace body 2.
Described heating unit 8 is located in thermal insulation layer, makes uniformity of temperature profile in lower furnace body 2, and saves lower furnace body 2 space, improve furnace space utilization ratio, during concrete enforcement, described heating unit 8 is electrode, and described electrode symmetry is arranged in described second thermal insulation layer 4, wherein the quantity of electrode is 5 ~ 25, distance between adjacent electrode is equal, above-mentioned electrode be arranged so that homogeneous temperature in body of heater, eliminate blind area, avoid the waste of ore resource, reduce energy consumption simultaneously.
Described vacuum unit 10 is for ensureing the vacuum state of lower furnace body 2, and this vacuum unit 10 is located at outside lower furnace body 2, is connected with lower furnace body 2 by vacuum-lines 101.
During concrete enforcement; described upper furnace body 1 is provided with top cover 11; described top cover 11 is provided with the import of protection gas; be beneficial to entering at shielding gas; specifically preparing in polycrystalline silicon ingot casting process; long crystalline substance, annealing and cooling stages, ensure that the import of protection gas is closed, the loss of minimizing protection gas and heat to greatest extent.
During concrete enforcement, sealing cover 9 is connected with between described upper furnace body 1 and described lower furnace body 2, in the utility model, body of heater is divided into upper furnace body 1 and lower furnace body 2 by arranging of sealing cover 9, and in the process preparing polycrystalline silicon ingot casting, avoid the thermal exchange of upper furnace body 1, lower furnace body 2, thus causing temperature distributing disproportionation in upper furnace body 1, lower furnace body 2, preferred sealing cover 9 is connected with controlling organization, is convenient to the automatic unlatching of sealing cover 9.
During concrete enforcement, also comprise refrigerating unit, described refrigerating unit is arranged in described upper furnace body 11, for completing annealing stage.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (10)
1. a polycrystalline silicon ingot or purifying furnace, is characterized in that: comprise body of heater, crucible, vacuum unit, heating unit, back up pad, lifting device;
Described body of heater comprises upper furnace body and lower furnace body;
Be provided with thermal insulation layer in described lower furnace body, in described thermal insulation layer, be provided with described heating unit;
Also be provided with the described lifting device of more than 2 in described lower furnace body, described lifting device is provided with described back up pad, and described back up pad is provided with described crucible;
Described vacuum unit is located at outside described lower furnace body, and is connected by vacuum-lines with described lower furnace body.
2. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, is characterized in that: described thermal insulation layer comprises the first thermal insulation layer and the second thermal insulation layer.
3. polycrystalline silicon ingot or purifying furnace as claimed in claim 2, it is characterized in that: described first thermal insulation layer is fire resistant heat preserving layer of fibers, described second thermal insulation layer is graphite carbon brick layer.
4. polycrystalline silicon ingot or purifying furnace as claimed in claim 3, it is characterized in that: described heating unit is electrode, described electrode symmetry is arranged in described second thermal insulation layer.
5. the polycrystalline silicon ingot or purifying furnace as described in any one of Claims 1 to 4, is characterized in that: described heating unit is Graphite Electrodes.
6. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, is characterized in that: be provided with 5 ~ 50 lifting devices in described lower furnace body.
7. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, is characterized in that: described upper furnace body is provided with top cover, described top cover is provided with the import of protection gas.
8. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, is characterized in that: be connected with sealing cover between described upper furnace body and described lower furnace body.
9. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterized in that: also comprise controlling organization, described controlling organization is connected with described sealing cover.
10. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterized in that: also comprise refrigerating unit, described refrigerating unit is arranged in described upper furnace body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520654653.1U CN204898122U (en) | 2015-08-27 | 2015-08-27 | Polycrystalline silicon ingot furnace |
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CN201520654653.1U CN204898122U (en) | 2015-08-27 | 2015-08-27 | Polycrystalline silicon ingot furnace |
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CN204898122U true CN204898122U (en) | 2015-12-23 |
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CN201520654653.1U Expired - Fee Related CN204898122U (en) | 2015-08-27 | 2015-08-27 | Polycrystalline silicon ingot furnace |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105910451A (en) * | 2016-06-13 | 2016-08-31 | 北京神雾环境能源科技集团股份有限公司 | Dry distillation device with lower furnace body capable of moving up and down and dry distillation method of dry distillation device |
-
2015
- 2015-08-27 CN CN201520654653.1U patent/CN204898122U/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105910451A (en) * | 2016-06-13 | 2016-08-31 | 北京神雾环境能源科技集团股份有限公司 | Dry distillation device with lower furnace body capable of moving up and down and dry distillation method of dry distillation device |
CN105910451B (en) * | 2016-06-13 | 2018-02-23 | 神雾科技集团股份有限公司 | A kind of lower furnace body destructive distillation device moving up and down and its method for destructive distillation |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151223 Termination date: 20180827 |
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CF01 | Termination of patent right due to non-payment of annual fee |