CN204111927U - A kind of high-efficiency polycrystalline ingot furnace thermal field structure - Google Patents
A kind of high-efficiency polycrystalline ingot furnace thermal field structure Download PDFInfo
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- CN204111927U CN204111927U CN201420514360.9U CN201420514360U CN204111927U CN 204111927 U CN204111927 U CN 204111927U CN 201420514360 U CN201420514360 U CN 201420514360U CN 204111927 U CN204111927 U CN 204111927U
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Abstract
The utility model is a kind of high-efficiency polycrystalline ingot furnace thermal field structure, comprising: body of heater and the heat-insulation cage be located in body of heater; Be located at the upper heater in heat-insulation cage and lower well heater; Be located at the quartz crucible between upper heater and lower well heater; The graphite side being located at the graphite base plate below quartz crucible and being located at above graphite base plate four limit, quartz crucible is embedded between graphite side; Be located at the oriented solidified blocks below described graphite base plate; Flatly be located at the thermal field plate of oriented solidified blocks surrounding, its one end connects with heat-insulation cage Inner arm, and the lower surface of its other end is overlapped on oriented solidified blocks; Be located at the first thermofin between graphite side and graphite base plate and be located at the second thermofin of thermal field plate upper surface; Be located at the thermal insulation layer between graphite base plate and oriented solidified blocks.The utility model can provide applicable efficient thermal field, makes polycrystalline silicon ingot solid-liquid interface distribution in long brilliant process rationally, be beneficial to the impurity impurities removal in long brilliant process, greatly can improve the total quality of crystal.
Description
Technical field
The utility model belongs to photovoltaic element processing units field, relates to ingot furnace thermal field structure, particularly a kind of high-efficiency polycrystalline ingot furnace thermal field structure that a kind of directional solidification method produces polycrystal silicon ingot.
Background technology
Current photovoltaic industry development rapidly, and market competition encourages, reduction battery efficiency and production cost become the most important thing, and efficient polycrystalline silicon heavy stone used as an anchor (little grain-size) becomes current development trend, and constantly promoting efficient polycrystalline silicon heavy stone used as an anchor quality and saving energy and reduce the cost is the important channel that next step reduces costs.
Polycrystalline cast ingot is the most general with seed-grain method at present, first the seed crystal chosen is taped against crucible bottom in ingot casting process, again polycrystalline silicon raw material is put into bottom quartz crucible, then with the directional solidification method production efficient polycrystalline silicon heavy stone used as an anchor comprising the steps such as heating, fusing, long crystalline substance, annealing and cooling.
Existing polycrystalline furnace is provided with one piece of oriented solidified blocks and surrounding trapezoidal plate, such structure ingot casting temperature of thermal field distribution is not suitable for, cause polycrystalline silicon ingot solid-liquid interface convex-concave in long brilliant process obvious, irrational distribution, be unfavorable for the impurity impurities removal in long brilliant process, have larger impact to the total quality of crystal.
Summary of the invention
The technical problems to be solved in the utility model is for the deficiencies in the prior art, a kind of high-efficiency polycrystalline ingot furnace thermal field structure is proposed, this polycrystalline ingot furnace thermal field structure can provide applicable efficient thermal field, make polycrystalline silicon ingot solid-liquid interface distribution in long brilliant process reasonable, be beneficial to the impurity impurities removal in long brilliant process, greatly can improve the total quality of crystal.
The technical problems to be solved in the utility model is achieved through the following technical solutions.The utility model is a kind of high-efficiency polycrystalline ingot furnace thermal field structure, and its point is, comprising:
Body of heater and the heat-insulation cage be located in body of heater;
Be located at the upper heater in heat-insulation cage and lower well heater;
Be located at the quartz crucible for holding polycrystalline silicon material between upper heater and lower well heater;
The graphite side being located at the graphite base plate below quartz crucible coaxially and being located at vertically above graphite base plate four limit, described quartz crucible is embedded between graphite side;
Be located at the oriented solidified blocks for directed heat conduction below described graphite base plate coaxially;
Flatly be located at the thermal field plate of oriented solidified blocks surrounding, its one end connects with heat-insulation cage Inner arm, and the lower surface of its other end is overlapped on the upper surface of oriented solidified blocks;
Be located at the first thermofin between graphite side and graphite base plate and be located at the second thermofin of thermal field plate upper surface;
Be located at the thermal insulation layer between graphite base plate and oriented solidified blocks.
In a kind of high-efficiency polycrystalline ingot furnace thermal field structure of the utility model technical scheme, preferred technical scheme feature is that the first described thermofin length exceeds trapezoidal plate further, and exceeding part long is 10-50mm.
In a kind of high-efficiency polycrystalline ingot furnace thermal field structure of the utility model technical scheme, preferred technical scheme feature is that the length of the first described thermofin horizontal section is identical with width with the length of graphite side bottom surface with width further.
In a kind of high-efficiency polycrystalline ingot furnace thermal field structure of the utility model technical scheme, preferred technical scheme feature is that the material of the first described thermofin, the second thermofin and thermal insulation layer is carbon felt further.
Compared with prior art, the utility model arranges thermal insulation layer by arranging bottom thermofin, graphite and between oriented solidified blocks between graphite base plate and graphite side and on thermal field plate, the heat trnasfer of heat between unlike material can be controlled, reduce scattering and disappearing of crucible and graphite side temperature, when silicon material is melted, appropriateness insulation, reduces energy consumption; Can improve crucible wall temperature during long crystalline substance, improving solid-liquid interface, is level or dimpling from concave change, is conducive to impurity impurities removal, improves crystal mass.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Referring to accompanying drawing, further describe concrete technical scheme of the present utility model, so that those skilled in the art understands the utility model further, and do not form the restriction of its power.
Embodiment 1, with reference to Fig. 1, a kind of high-efficiency polycrystalline ingot furnace thermal field structure, comprising:
Body of heater and the heat-insulation cage 1 be located in body of heater;
Be located at the upper heater 2 in heat-insulation cage 1 and lower well heater 3;
Be located at the quartz crucible for holding polycrystalline silicon material between upper heater and lower well heater;
The graphite side 7 being located at the graphite base plate 5 below quartz crucible 4 coaxially and being located at vertically above graphite base plate 5 four limit, quartz crucible 4 is embedded between graphite side 7;
Be located at the oriented solidified blocks 6 for directed heat conduction below graphite base plate coaxially;
Flatly be located at the thermal field plate 8 of oriented solidified blocks 6 surrounding, thermal field plate 8 one end connects with heat-insulation cage Inner arm, and the lower surface of the other end of thermal field plate 8 is overlapped on the upper surface of oriented solidified blocks 6, and the shape of thermal field plate 8 is trapezoidal.
First thermofin 9 of pad between graphite side 7 and graphite base plate 5 and be laid on the second thermofin 11 of thermal field plate upper surface, first thermofin length exceeds trapezoidal plate, exceeding part long is 10-50mm, be preferably 20mm, can also be 10mm or 50mm, also can be the arbitrary dimension between 10-50mm, the first insulation thickness be 10-50mm.
Pad the thermal insulation layer 10 be located between graphite base plate 5 and oriented solidified blocks 6, the width of thermal insulation layer 10 is 10-50mm, is highly 10-50mm.
Preferably, the length of the first thermofin 9 horizontal section is identical with width with the length of graphite side 7 bottom surface with width,
The first above-mentioned thermofin 9, second thermofin 11 and the material of thermal insulation layer 10 are carbon felt, carbon felt has another name called carbon fiber felt, it is PAN based carbon felt, soft carbon felt and hard carbon felt is divided into (to be also solidification felt, soft carbon felt adds glue after fixing), be divided into carbon felt (domestic general treatment temp is more than 900 degree) and graphite felt (domestic general treatment temp is about 1700 degree) according to the temperature difference in carbon felt production process, be divided into 4 classes on the whole: carbon felt, graphite felt, hard carbon felt, hard graphite felt.
After polycrystalline silicon charge, at graphite base plate 5, surrounding graphite side is installed, and selects suitable lagging material pad bottom graphite and between graphite side.This reforming technology is normally feeded operation, can reduce crucible graphite side plate temperature and scatter and disappear, reduce energy consumption.
Before polycrystalline cast ingot shove charge, by lagging material with suitable size pad on surrounding trapezoidal plate, width is longer than trapezoidal plate, and this reforming technology is normally feeded operation, can reduce crucible ambient temperature and scatter and disappear, reduce energy consumption during fusing; Meanwhile, crucible wall temperature improves, and improving solid-liquid interface, is level or dimpling from concave change, is conducive to impurity impurities removal, improves crystal mass.
After polycrystalline cast ingot shove charge, by lagging material with suitable size plug between graphite base plate and oriented solidified blocks, i.e. oriented solidified blocks surrounding groove, this reforming technology is normally feeded operation, when long brilliant time, improve crucible wall temperature, improve solid-liquid interface, be level or dimpling from concave change, be conducive to impurity impurities removal, improve crystal mass.
The utility model arranges thermal insulation layer by arranging bottom thermofin, graphite and between oriented solidified blocks between graphite base plate and graphite side and on thermal field plate, the heat trnasfer of heat between unlike material can be controlled, reduce scattering and disappearing of crucible and graphite side temperature, when silicon material is melted, appropriateness insulation, reduces energy consumption; Can improve crucible wall temperature during long crystalline substance, improving solid-liquid interface, is level or dimpling from concave change, is conducive to impurity impurities removal, improves crystal mass.
Claims (4)
1. a high-efficiency polycrystalline ingot furnace thermal field structure, is characterized in that, comprising:
Body of heater and the heat-insulation cage be located in body of heater;
Be located at the upper heater in heat-insulation cage and lower well heater;
Be located at the quartz crucible for holding polycrystalline silicon material between upper heater and lower well heater;
The graphite side being located at the graphite base plate below quartz crucible coaxially and being located at vertically above graphite base plate four limit, described quartz crucible is embedded between graphite side;
Be located at the oriented solidified blocks for directed heat conduction below described graphite base plate coaxially;
Flatly be located at the thermal field plate of oriented solidified blocks surrounding, its one end connects with heat-insulation cage Inner arm, and the lower surface of its other end is overlapped on the upper surface of oriented solidified blocks;
Be located at the first thermofin between graphite side and graphite base plate and be located at the second thermofin of thermal field plate upper surface;
Be located at the thermal insulation layer between graphite base plate and oriented solidified blocks.
2. high-efficiency polycrystalline ingot furnace thermal field structure according to claim 1, is characterized in that: the first thermofin length exceeds trapezoidal plate, and exceeding part long is 10-50mm.
3. high-efficiency polycrystalline ingot furnace thermal field structure according to claim 1, is characterized in that: the length of the first described thermofin horizontal section is identical with width with the length of graphite side bottom surface with width.
4. the high-efficiency polycrystalline ingot furnace thermal field structure according to any one of claim 1-3, is characterized in that: the material of the first described thermofin, the second thermofin and thermal insulation layer is carbon felt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420514360.9U CN204111927U (en) | 2014-09-09 | 2014-09-09 | A kind of high-efficiency polycrystalline ingot furnace thermal field structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420514360.9U CN204111927U (en) | 2014-09-09 | 2014-09-09 | A kind of high-efficiency polycrystalline ingot furnace thermal field structure |
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| CN204111927U true CN204111927U (en) | 2015-01-21 |
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| CN201420514360.9U Expired - Fee Related CN204111927U (en) | 2014-09-09 | 2014-09-09 | A kind of high-efficiency polycrystalline ingot furnace thermal field structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
| CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
-
2014
- 2014-09-09 CN CN201420514360.9U patent/CN204111927U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN106702486A (en) * | 2017-03-30 | 2017-05-24 | 韩华新能源科技有限公司 | High crystal quality polysilicon ingot thermal field |
| CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
| CN107299391B (en) * | 2017-07-12 | 2020-07-24 | 晶科能源有限公司 | Polycrystal ingot furnace heat dissipation platform and polycrystal ingot furnace |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20170909 |
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| CF01 | Termination of patent right due to non-payment of annual fee |