CN203144557U - Bidirectional enhanced gas cooling device in crystal growth device - Google Patents
Bidirectional enhanced gas cooling device in crystal growth device Download PDFInfo
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- CN203144557U CN203144557U CN 201320079916 CN201320079916U CN203144557U CN 203144557 U CN203144557 U CN 203144557U CN 201320079916 CN201320079916 CN 201320079916 CN 201320079916 U CN201320079916 U CN 201320079916U CN 203144557 U CN203144557 U CN 203144557U
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- gas cooling
- crucible
- cushion block
- cooling cushion
- gas
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Abstract
The utility model provides a bidirectional enhanced gas cooling device in a crystal growth device, wherein temperature change uniformity in a thermal field can be ensured, temperature change and heat flow can be controlled, and growth of high-quality crystals can be ensured. The device comprises an outer furnace shell which is internally provided with a crucible, an insulating cage, a top heater and peripheral heaters. The crucible, the top heater and the peripheral heaters are located in a cavity formed by the insulating cage. The top heater is located above the crucible. The peripheral heaters are respectively located around the crucible. The insulating cage is provided with an opening which is provided with a bottom insulating plate. The device is characterized in that the bottom of the crucible is supported on the upper end face of a gas cooling pad which is internally provided with a gas way. The gas way of the gas cooling pad is externally connected two ventilating pipes.
Description
Technical field
The utility model relates to the technical field of the heat converter structure in the crystal growth equipment, is specially bidirectional strength oxidizing gases refrigerating unit in a kind of crystal growth equipment.
Background technology
Polycrystalline silicon ingot or purifying furnace is photovoltaic industry polysilicon crystal growth equipment commonly used, its function is through fusing with the polysilicon shivering material, processing steps such as directional solidification growth are produced the crystal growth equipment of the class monocrystalline ingot casting of the polycrystalline ingot casting of crystal growth direction unanimity or single crystal-like performance.Wherein directional solidification processes is the processing step of most critical in the production process.The tradition ingot furnace, see Fig. 1, it is in the directional freeze process, by promoting the height of heat-insulation cage 5 or reduction crucible 3, make the radiating block 6 of crucible 3 bottoms from thermal insulation layer, come out, thereby the temperature that realizes crucible bottom descends, and realizes the process of directional freeze, the speed of growth of control silicon crystal.Among Fig. 1,1 is that top heater, 2 is that outer furnace shell, 3 is that well heater, 5 was that heat-insulation cage, 6 is that bottom radiating block, 7 is that bottom temperature probe, 8 is the movable warming plate in bottom around crucible, 4 was.
But along with development of technology, the some shortcomings part of above-mentioned crucible bottom cooling method slowly reveals.At first, the charge amount of polycrystalline silicon ingot or purifying furnace significantly rises, and rises to present 1000 kilograms from initial more than 200 kilogram.Big charge amount is brought a serious problem to thermal field, namely in the technology operational process, is difficult to guarantee the homogeneity of thermal field internal temperature variation, and therefore the crystal for growing high-quality brings no small difficulty.
The temperature control more accurately of the growth needs of high quality crystal, existing installation is by exposing the mode distribute heat of radiating block, the size of its variation of temperature and heat flux all is difficult to control, is a kind of passive radiating mode, and it can't guarantee the growth of high quality crystal.
Summary of the invention
At the problems referred to above, the utility model provides bidirectional strength oxidizing gases refrigerating unit in a kind of crystal growth equipment, it can guarantee the homogeneity that the thermal field internal temperature changes, and can control temperature variation and heat flux size, can guarantee the growth of high quality crystal.
Bidirectional strength oxidizing gases refrigerating unit in a kind of crystal growth equipment, its technical scheme is such: it comprises outer furnace shell, be furnished with crucible in the described outer furnace shell, heat-insulation cage, top heater, well heater all around, described crucible, top heater, well heater all is positioned at the formed cavity of described heat-insulation cage all around, described top heater is positioned at the top of described crucible, described around well heater lay respectively at described crucible around, described heat-insulation cage has gap, described gap position is provided with the movable warming plate in bottom, it is characterized in that: the bottom supporting of described crucible is in the upper surface of gas cooling cushion block, the indoor design of described gas cooling cushion block has gas circuit, the gas circuit of described gas cooling cushion block is circumscribed with two ventpipes, two described ventpipes, outside interchanger, the gas circuit of gas cooling cushion block, topping-up pump forms the closed cycle path, wherein a described ventpipe is circumscribed with flow sensor, pressure transmitter, described gas cooling cushion block be positioned at the movable warming plate in described bottom directly over.
It is further characterized in that:
Described gas cooling cushion block is specially graphite gas cooling cushion block;
The lower end of two described ventpipes connects behind the gas flow reverser respectively and outside interchanger, topping-up pump form the circulation path.
After adopting structure of the present utility model, the gas cooling cushion block replaces the function of radiating block, and this gas cooling cushion block indoor design has gas circuit, and links to each other with interchanger, the topping-up pump of device external by two ventpipes.During work, the argon gas that temperature is lower or/other gas is by the gas cooling cushion block, the heat of crucible bottom is taken away, thereby realize temperature variation on a declining curve from top to bottom in the inner polysilicon liquation of crucible, the hot gas that carries heat leaves interchanger from outlet, enter into cool end heat exchanger and cool off, and then reenter the gas circuit of gas cooling cushion block inside, it can guarantee the homogeneity that the thermal field internal temperature changes; And because wherein a described ventpipe is circumscribed with flow sensor, pressure transmitter, its can according to the Data Control argon gas or/flow of other gas, thereby control temperature variation and heat flux size are guaranteed the growth of high quality crystal.
Description of drawings
Fig. 1 is the structural representation of existing polycrystalline silicon ingot or purifying furnace;
Fig. 2 is front view structural representation of the present utility model.
Embodiment
See Fig. 2, it comprises outer furnace shell 2, be furnished with crucible 3 in the outer furnace shell 2, heat-insulation cage 5, top heater 1, well heater 4 all around, crucible 3, top heater 1, well heater 4 all is positioned at heat-insulation cage 5 formed cavitys all around, top heater 1 is positioned at the top of crucible 3, all around well heater 4 lay respectively at crucible 1 around, heat-insulation cage 5 have a gap 17, gap 17 positions are provided with the movable warming plate 8 in bottom, the bottom supporting of crucible 3 is in the upper surface of gas cooling cushion block 6, the indoor design of gas cooling cushion block 6 has gas circuit 9, the gas circuit 9 of gas cooling cushion block 6 is circumscribed with two ventpipes 10,11, two ventpipes 10,11, outside interchanger 12, the gas circuit 9 of gas cooling cushion block, topping-up pump 13 forms the closed cycle path, wherein a ventpipe 10 is circumscribed with flow sensor 14,15, two ventpipes 10 of pressure transmitter, 11 lower end connects gas flow reverser 16 backs and outside interchanger 12 respectively, topping-up pump 13 forms the circulation path; Gas cooling cushion block 6 be positioned at the bottom movable warming plate 8 directly over, gas cooling cushion block 6 is specially graphite gas cooling cushion block.7 is the bottom temperature probe among the figure.
Wherein gas flow reverser 16 makes the gas in the gas cooling cushion block can realize two-way flow, and can switch as required in the technology operational process.
Claims (3)
1. bidirectional strength oxidizing gases refrigerating unit in the crystal growth equipment, it comprises outer furnace shell, be furnished with crucible in the described outer furnace shell, heat-insulation cage, top heater, well heater all around, described crucible, top heater, well heater all is positioned at the formed cavity of described heat-insulation cage all around, described top heater is positioned at the top of described crucible, described around well heater lay respectively at described crucible around, described heat-insulation cage has gap, described gap position is provided with the movable warming plate in bottom, it is characterized in that: the bottom supporting of described crucible is in the upper surface of gas cooling cushion block, the indoor design of described gas cooling cushion block has gas circuit, the gas circuit of described gas cooling cushion block is circumscribed with two ventpipes, two described ventpipes, outside interchanger, the gas circuit of gas cooling cushion block, topping-up pump forms the closed cycle path, wherein a described ventpipe is circumscribed with flow sensor, pressure transmitter, described gas cooling cushion block be positioned at the movable warming plate in described bottom directly over.
2. bidirectional strength oxidizing gases refrigerating unit in a kind of crystal growth equipment according to claim 1, it is characterized in that: described gas cooling cushion block is specially graphite gas cooling cushion block.
3. bidirectional strength oxidizing gases refrigerating unit in a kind of crystal growth equipment according to claim 1 and 2 is characterized in that: the lower end of two described ventpipes connects behind the gas flow reverser respectively and outside interchanger, topping-up pump form the circulation path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320079916 CN203144557U (en) | 2013-02-21 | 2013-02-21 | Bidirectional enhanced gas cooling device in crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320079916 CN203144557U (en) | 2013-02-21 | 2013-02-21 | Bidirectional enhanced gas cooling device in crystal growth device |
Publications (1)
| Publication Number | Publication Date |
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| CN203144557U true CN203144557U (en) | 2013-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320079916 Expired - Fee Related CN203144557U (en) | 2013-02-21 | 2013-02-21 | Bidirectional enhanced gas cooling device in crystal growth device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104131345A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same |
| CN104389017A (en) * | 2014-08-18 | 2015-03-04 | 吕铁铮 | Internal inlet gas gas-cooling device of coagulation enhancing block of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN104404619A (en) * | 2014-08-18 | 2015-03-11 | 吕铁铮 | Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof |
-
2013
- 2013-02-21 CN CN 201320079916 patent/CN203144557U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104131345A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | Polysilicon semi-fusion casting device adopting bottom air cooling and technology using the same |
| CN104389017A (en) * | 2014-08-18 | 2015-03-04 | 吕铁铮 | Internal inlet gas gas-cooling device of coagulation enhancing block of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN104404619A (en) * | 2014-08-18 | 2015-03-11 | 吕铁铮 | Polysilicon ingot furnace and coagulation aid block external admission air cooling device thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130821 Termination date: 20150221 |
|
| EXPY | Termination of patent right or utility model |