CN207109142U - Crystal growing furnace - Google Patents
Crystal growing furnace Download PDFInfo
- Publication number
- CN207109142U CN207109142U CN201721005669.5U CN201721005669U CN207109142U CN 207109142 U CN207109142 U CN 207109142U CN 201721005669 U CN201721005669 U CN 201721005669U CN 207109142 U CN207109142 U CN 207109142U
- Authority
- CN
- China
- Prior art keywords
- crucible
- heater
- crystal growing
- growing furnace
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The utility model discloses a kind of crystal growing furnace that crystal is prepared using directional solidification method as principle, its chief component is body of heater, takes out blow-off system, heater, lifting rotation mechanism, thermal insulation system, heat-exchange system, crucible holder.Bridgman method is combined by the growth furnace with heat-exchanging method, is specially：Temperature difference during crystal growth is provided by the relative movement between crucible and calandria, the heat exchange platform of crucible bottom and circulation argon gas.The characteristics of the utility model, is, is additionally arranged rotating mechanism so that during crystal growth, around axis uniform rotation while heater and thermal insulation system slowly move up.It can also ensure that thermal field is uniform when so even if calandria designs less reasonable or local fault.
Description
Technical field
A kind of crystal growing furnace is the utility model is related to, suitable for field of crystal growth.
Background technology
Growing method and equipment have vital influence to the quality for preparing crystal.Common crystal growth side
Method has Bridgman method, zone melting method, czochralski method, heat-exchanging method, casting method etc..Currently realize large-scale industrial production
Crystal is mainly monocrystalline silicon, polysilicon, and the optimization of polycrystalline silicon ingot or purifying furnace is concentrated mainly on expansion and the thermal field of ingot furnace size
Optimization design, and the optimization design of current thermal field is mainly to be set from the optimization of heater shape, position and insulation cage
Meter angularly sets out.
The content of the invention
The utility model provides a kind of crystal growing furnace, and chief component is body of heater, takes out blow-off system, heater, liter
Rotating mechanism, thermal insulation system, heat-exchange system, crucible holder drop.The growth furnace is by Bridgman method and heat-exchanging method phase
With reference to specially：Temperature difference during crystal growth by the relative movement between crucible and calandria, the heat exchange platform of crucible bottom and
Argon gas is circulated to provide.Optimization design with current thermal field is mainly from the excellent of heater shape, position and insulation cage
Change design angularly to set out and compares, be the characteristics of the utility model, be additionally arranged rotating mechanism so that during crystal growth, heating
Around axis uniform rotation while device and thermal insulation system slowly move up.Even if so calandria design is less rationally or local
Also it can ensure that thermal field is uniform during failure.
Figure of description
Fig. 1 is the structure chart of the utility model crystal growing furnace.
Mark is in figure（1）, rotary lifting mechanism（2）, subiculum warming plate（3）, stay-warm case（4）, air inlet pipe（5）,
Air inlet pipe（5）, bleeding point（6）, crucible cover plate（7）, crucible guard boards（8）, graphite bottom plate（9）, crucible（10）, carbon felt（11）, heat
Switching plane（12）, graphite column（13）, side heater（14）, top heater（15）, air exchanging hole（16）, spout hole
（17）, overflow blanket（18）.In addition, graphite column（13）Between, overflow blanket（18）On be evenly equipped with overflow silk（19）.
Embodiment
Particular content of the present utility model is further illustrated below in conjunction with the accompanying drawings：
As shown in figure 1, the crystal growing furnace includes body, takes out blow-off system, heater, lifting rotation mechanism, thermal insulation separation
Hot systems, heat-exchange system, crucible holder.Each several part relation is as follows：
Body of heater（1）Rotary lifting mechanism is set on axis（2）, rotary lifting mechanism one end is connected with thermal insulation system
Connect, thermal insulation system is by being built in body of heater（1）Subiculum warming plate（3）With stay-warm case（4）Composition；Rotary lifting mechanism（2）
It is arranged to hollow, inside sets air inlet pipe（5）, air inlet pipe（5）With bleeding point（6）Collectively constitute and take out blow-off system, wherein, bleeding point
（6）Located at body of heater（1）On, air inlet pipe（5）One end is connected to crucible cover plate（7）And gas exchanges can be kept with crucible；Crucible cover
Plate（7）, crucible guard boards（8）, graphite bottom plate（9）Collectively constitute crucible holder, crucible（10）It is put in crucible holder, and crucible
（10）With being provided with carbon felt among crucible rack side wall（11）；Graphite bottom plate between crucible（8）Have heat exchange platform
（12）, heat exchange platform（12）Pass through graphite column（13）It is fixed on body of heater（1）On, heat exchange platform（12）It is passed through with extraction gas
Circulation argon gas collectively constitute heat-exchange system；Crucible holder is surrounded by side heater（14）, top is heated provided with top
Device（15）.Wherein, crucible guard boards（8）It is provided with air exchanging hole（16）；Warming plate（3）It is provided with spout hole（17）；Body of heater（1）
Bottom is covered with overflow blanket（18）；Graphite column（13）Between, overflow blanket（18）On be evenly equipped with overflow silk（19）.
The running of the crystal growing furnace is as follows：The first step, after crucible charge, it is positioned on crucible holder, seals
Closed furnace body.
Second step, vacuumize, lead to argon gas, be repeated several times, until stove chamber air drains.
3rd step, temperature program(me), calandria climbing speed, the calandria speed of rotation are set.
4th step, operation.Melting sources heat is provided by side heater and top heater.In running, heating
Body rotation rises, and argon gas is taken out, enters circulation, and heat exchange platform three parts provide the temperature difference of crystal growth.If during, crucible is careless
Rupture, the melt of spilling can be left by spout hole, when touching the overflow silk between graphite column or on overflow blanket, i.e., can be reported
It is alert, avoid the further expansion of loss.
Claims (5)
1. crystal growing furnace, chief component is body of heater, takes out blow-off system, heater, lifting rotation mechanism, insulation system
System, heat-exchange system, crucible holder；The physical relationship of each several part is body of heater（1）Rotary lifting mechanism is set on axis（2）, rotation
Turn elevating mechanism one end with thermal insulation system to be connected, thermal insulation system is by being built in body of heater（1）Subiculum warming plate（3）
With stay-warm case（4）Composition；Rotary lifting mechanism（2）It is arranged to hollow, inside sets air inlet pipe（5）, air inlet pipe（5）With bleeding point（6）
Collectively constitute and take out blow-off system, wherein, bleeding point（6）Located at body of heater（1）On, air inlet pipe（5）One end is connected to crucible cover plate
（7）；Crucible cover plate（7）, crucible guard boards（8）, graphite bottom plate（9）Collectively constitute crucible holder, crucible（10）It is put in crucible holder
In, and crucible（10）With being provided with carbon felt among crucible rack side wall（11）；Graphite bottom plate between crucible（9）Have hot friendship
Change platform（12）, heat exchange platform（12）Pass through graphite column（13）It is fixed on body of heater（1）On, heat exchange platform（12）With extraction
The circulation argon gas that gas is passed through collectively constitutes heat-exchange system；Crucible holder is surrounded by side heater（14）, top is provided with top
Portion's heater（15）.
2. crystal growing furnace as claimed in claim 1, it is characterised in that crucible guard boards（8）It is provided with air exchanging hole（16）.
3. crystal growing furnace as claimed in claim 1, it is characterised in that warming plate（3）It is provided with spout hole（17）.
4. crystal growing furnace as claimed in claim 1, it is characterised in that body of heater（1）Bottom is covered with overflow blanket（18）.
5. crystal growing furnace as claimed in claim 1, it is characterised in that graphite column（13）Between, overflow blanket（18）It is upper uniform
There is overflow silk（19）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721005669.5U CN207109142U (en) | 2017-08-12 | 2017-08-12 | Crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721005669.5U CN207109142U (en) | 2017-08-12 | 2017-08-12 | Crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207109142U true CN207109142U (en) | 2018-03-16 |
Family
ID=61571453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721005669.5U Active CN207109142U (en) | 2017-08-12 | 2017-08-12 | Crystal growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207109142U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110158151A (en) * | 2019-06-21 | 2019-08-23 | 河北普兴电子科技股份有限公司 | For the crucible cover of silicon carbide monocrystal growth, crucible and the method for crystal growth |
| CN114959871A (en) * | 2022-06-16 | 2022-08-30 | 西安交通大学 | Heat radiation structure of single crystal casting furnace and single crystal casting furnace |
-
2017
- 2017-08-12 CN CN201721005669.5U patent/CN207109142U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110158151A (en) * | 2019-06-21 | 2019-08-23 | 河北普兴电子科技股份有限公司 | For the crucible cover of silicon carbide monocrystal growth, crucible and the method for crystal growth |
| CN114959871A (en) * | 2022-06-16 | 2022-08-30 | 西安交通大学 | Heat radiation structure of single crystal casting furnace and single crystal casting furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102162125B (en) | Thermal field structure of polysilicon ingot casting furnace | |
| CN102877117A (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN101892518B (en) | System and method for manufacturing polycrystalline ingots | |
| JP6396931B2 (en) | Directional coagulation system and method | |
| CN102358952B (en) | Fuel-gas-heating directional solidification furnace | |
| CN205711031U (en) | A kind of single crystal growing furnace | |
| CN202297866U (en) | Argon gas cooling device of polysilicon ingot furnace | |
| CN202131390U (en) | Recirculated cooling water energy saving device for polycrystal ingot casting production | |
| CN207109142U (en) | Crystal growing furnace | |
| CN203741449U (en) | Device for blowing into polycrystalline silicon melt in directional solidification furnace | |
| CN102021646A (en) | Thermal field structure of polycrystalline silicon crystal growing furnace | |
| CN102154683A (en) | Monocrystal/polycrystal directional solidification system of metal heating body structure | |
| CN203144557U (en) | Bidirectional enhanced gas cooling device in crystal growth device | |
| CN202265626U (en) | Combustion gas heating directional solidification furnace | |
| CN104232932B (en) | A kind of purifying plant of rafifinal and using method thereof | |
| CN202187089U (en) | Quick feedback silicon liquid overflow monitoring device | |
| CN103498194B (en) | A kind of apparatus for directional solidification and prepare the method for polysilicon | |
| CN203486915U (en) | Directional freezing equipment | |
| CN204281893U (en) | A kind of directional solidification thermal-preservation thermal field | |
| CN103741205B (en) | Full monocrystalline silicon cast ingot stove | |
| CN105586636A (en) | Manufacturing technology for directional-solidification growth of polycrystalline silicon ingots used for solar cells | |
| CN203530486U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN216765119U (en) | Single crystal furnace heat exchange system and single crystal furnace | |
| CN102242391B (en) | Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method | |
| CN205874196U (en) | Quartz glass of sharp nature forced air cooling melts continuous gas and smelts and found stove |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |