CN203144555U - Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace - Google Patents
Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace Download PDFInfo
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- CN203144555U CN203144555U CN 201320079905 CN201320079905U CN203144555U CN 203144555 U CN203144555 U CN 203144555U CN 201320079905 CN201320079905 CN 201320079905 CN 201320079905 U CN201320079905 U CN 201320079905U CN 203144555 U CN203144555 U CN 203144555U
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- induction heating
- polycrystalline silicon
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Abstract
The utility model provides an electromagnetic induction heating system at the bottom of a polycrystalline silicon ingot furnace. According to the electromagnetic induction heating system, a heating body at the bottom of a crucible is directly heated by using an electromagnetic induction heating technology, so that the uniformity of temperature in a thermal field is realized; and meanwhile, after silicon is molten, the molten silicon has good conductive performance and flows under the action of electromagnetic waves, so that the removal of impurities in a directional solidification process is facilitated. The electromagnetic induction heating system is simple in structure and can be used for ensuring that the uniformity of temperature in the thermal field is achieved and few impurities exist on crystal boundaries between crystals. The electromagnetic induction heating system comprises the crucible, an external heat insulation layer, a top heater and periphery heaters, wherein the crucible, the top heater and the periphery heaters are arranged in a cavity defined by the external heat insulation layer, the top heater is positioned above the crucible, and the periphery heaters are respectively arranged around the crucible. The electromagnetic induction heating system is characterized in that the bottom of the crucible is supported on the heating body, and the heating body is supported on a heat preservation and insulation layer.
Description
Technical field
The utility model relates to the technical field of polycrystalline silicon ingot casting furnace structure, is specially a kind of polycrystalline silicon ingot or purifying furnace bottom electromagnetic induction heating system.
Background technology
Polycrystalline silicon ingot or purifying furnace is the major equipment during polycrystalline silicon ingot casting is produced in the present photovoltaic industry, its function is that polycrystalline silicon material behind several processing steps such as technology melts, directional freeze crystallization, annealing, cooling, is grown to serve as the ingot casting with consistent crystallographic direction or the ingot casting with single crystal characteristics according to setting.Produce in the polycrystalline silicon ingot casting process, its topmost parts are the thermal field of ingot furnace.Thermal field reasonable in design, the power that can pass through control heater is exported the position of variation, lagging material, thickness etc., realizes growing polycrystalline silicon ingot crystal selectively, keeps the direction unanimity of crystal growth, more effectively gets rid of metallic impurity.Existing equipment is generally four sides or five heating, its working process is: the silicon material is placed in the crucible, put into thermal field then, the bottom is provided with the heat exchange platform, heating by well heater, with the fusing of silicon material, control heat more step by step and flow out from the bottom, realize that polysilicon solidifies at the crucible interior orientation.
In recent years, along with technical progress, the charge amount of polycrystalline silicon ingot or purifying furnace was increasing.Rise to 800 kilograms to 1000 kilograms from initial more than 200 kilogram, in addition higher.Big charge amount causes the size of crucible to become big, and the thermal field size is corresponding increase also; But, thermal field temperature inside homogeneity is but because the increase of size descends to some extent, particularly in the production technique of class monocrystalline or efficient polycrystalline, more need accurately to control temperature variation and homogeneity in the thermal field, otherwise, the consistence of crystal growth will can not get guaranteeing, and simultaneously, also can deposit a large amount of impurity above the crystal boundary between crystal; The crystal boundary that has a large amount of impurity and dislocation on the silicon chip of making at last will be introduced deep energy level in the silicon forbidden band, become the deathnium of photoproduction minority carrier, reduce the photoelectric transformation efficiency of making solar cell.
The ingot furnace that adopts six heater design is also arranged, that is: the bottom is furnished with one group of graphite heater, also has water cooling heat exchanger usually; By this water cooling heat exchanger, realizing that directional solidification processes is desired solidifies polysilicon from top to bottom.This design makes temperature of thermal field very even, and three warm areas in upper, middle and lower have increased the handiness of technology controlling and process.But, owing to increased the water cooling heat exchanger of bottom, thus having increased the complexity of mechanism, the structure design of bottom is relative complex also.
Summary of the invention
At the problems referred to above, the utility model provides a kind of polycrystalline silicon ingot or purifying furnace bottom electromagnetic induction heating system, and it utilizes the heating element of electromagnetic induction heating technology direct heating crucible bottom, thereby realizes thermal field temperature inside homogeneity; Simultaneously because after the silicon fusing, its conductivity is good, under electromagnetic effect, produces and flow, be conducive to the despumation in the directional freeze process, it is simple in structure, and guaranteed the thermal field internal temperature homogeneity, impurity is few above the crystal boundary between the crystal.
A kind of polycrystalline silicon ingot or purifying furnace bottom electromagnetic induction heating system, its technical scheme is such: it comprises crucible, outer insulative layer, top heater, well heater all around, described crucible, top heater, well heater all is positioned at the formed cavity of described outer insulative layer all around, described top heater is positioned at the top of described crucible, described around well heater lay respectively at described crucible around, it is characterized in that: the bottom supporting of described crucible is in heating element, described heating element is supported on the insulation thermal insulation layer, the bottom of described insulation thermal insulation layer is furnished with electromagnetic induction coil, described electromagnetic induction coil external source, described power supply is circumscribed with power-supply controller of electric, the bottom of described heating element is provided with temperature sensor, and described temperature sensor is external in described power-supply controller of electric.
It is further characterized in that:
Described heating element is specially graphite cake, simultaneously also as the use of graphite backplate;
It is exchange current that described power supply provides the electric current of electromagnetic induction coil;
Described electromagnetic induction coil can be one group of electromagnetic induction coil, also can form at least two identical group electromagnetic induction coils of rotation direction;
Described electromagnetic induction coil floor plan is in the bottom of described insulation thermal insulation layer;
Described electromagnetic induction coil is specially the hollow copper tubing screw arrangement and forms;
The electromagnetic induction coil inner chamber that described hollow copper tubing screw arrangement forms is equipped with water coolant.
After adopting structure of the present utility model, in the process that adds the thermalization material, the bottom electrical magnetic induction coil produces heat by the heating element of heated base, and then heating crucible bottom, it is poor to reduce the thermal field temperature inside, power-supply controller of electric is regulated the power supply of electromagnetic induction coil by the temperature that temperature sensor measures, the power output of control heating element, thereby realize adjusting the purpose of temperature, it utilizes the heating element of the direct indirect heating crucible bottom of electromagnetic induction heating technology, thereby realizes thermal field temperature inside homogeneity; Simultaneously because after the silicon fusing, its conductivity is good, under electromagnetic effect, produces and flow, be conducive to despumation in the directional freeze process, it is simple in structure, and impurity is few above having guaranteed crystal boundary between thermal field temperature inside homogeneity, the crystal.
Description of drawings
Fig. 1 is front view structural representation of the present utility model;
Fig. 2 is the structural representation of electromagnetic induction coil of the present utility model.
Embodiment
See Fig. 1, Fig. 2, it comprises crucible 4, outer insulative layer 2, top heater 1, well heater 3 all around, crucible 4, top heater 1, well heater 3 all is positioned at outer insulative layer 2 formed cavitys all around, top heater 1 is positioned at the top of crucible 4, all around well heater 3 lay respectively at crucible 4 around, the bottom supporting of crucible 4 is in heating element 5, heating element 5 is supported on insulation thermal insulation layer 6, the bottom of insulation thermal insulation layer 6 is furnished with electromagnetic induction coil 7, electromagnetic induction coil 7 external sources 8, it is exchange current that power supply 8 provides the electric current of electromagnetic induction coil, power supply 8 is circumscribed with power-supply controller of electric 9, the bottom of heating element 5 is provided with temperature sensor 10, temperature sensor 10 external source controllers 9.Wherein, heating element 5 is specially the plumbago crucible backplate;
Electromagnetic induction coil 7 can be one group of electromagnetic induction coil, also can form at least two identical group electromagnetic induction coils of rotation direction; Electromagnetic induction coil 7 floor plan are in the bottom of insulation thermal insulation layer 6;
Electromagnetic induction coil 7 can be that the hollow copper tubing layout forms; Hollow copper tubing arranges that the electromagnetic induction coil inner chamber that forms is equipped with water coolant.
Its principle of work is as follows:
In changing material and directional freeze process, can change the frequency of the output exchange current of power supply 8 according to the needs of technology, realize the silicon material being stirred the purpose of despumation.
Claims (7)
1. polycrystalline silicon ingot or purifying furnace bottom electromagnetic induction heating system, it comprises crucible, outer insulative layer, top heater, well heater all around, described crucible, top heater, well heater all is positioned at the formed cavity of described outer insulative layer all around, described top heater is positioned at the top of described crucible, described around well heater lay respectively at described crucible around, it is characterized in that: the bottom supporting of described crucible is in heating element, described heating element is supported on the insulation thermal insulation layer, the bottom of described insulation thermal insulation layer is furnished with electromagnetic induction coil, described electromagnetic induction coil external source, described power supply is circumscribed with power-supply controller of electric, the bottom of described heating element is provided with temperature sensor, and described temperature sensor is external in described power-supply controller of electric.
2. a kind of polycrystalline silicon ingot or purifying furnace according to claim 1 bottom electromagnetic induction heating system, it is characterized in that: described heating element is specially graphite cake.
3. a kind of polycrystalline silicon ingot or purifying furnace according to claim 1 bottom electromagnetic induction heating system, it is characterized in that: it is exchange current that described power supply provides the electric current of electromagnetic induction coil.
4. a kind of polycrystalline silicon ingot or purifying furnace according to claim 1 bottom electromagnetic induction heating system, it is characterized in that: described electromagnetic induction coil can be one group of electromagnetic induction coil, also can be that at least two identical group electromagnetic induction coils of rotation direction are formed.
5. a kind of polycrystalline silicon ingot or purifying furnace according to claim 1 bottom electromagnetic induction heating system, it is characterized in that: described electromagnetic induction coil floor plan is in the bottom of described insulation thermal insulation layer.
6. a kind of polycrystalline silicon ingot or purifying furnace according to claim 1 bottom electromagnetic induction heating system, it is characterized in that: described electromagnetic induction coil is specially the hollow copper tubing screw arrangement and forms.
7. a kind of polycrystalline silicon ingot or purifying furnace according to claim 6 bottom electromagnetic induction heating system, it is characterized in that: the electromagnetic induction coil inner chamber that described hollow copper tubing screw arrangement forms is equipped with water coolant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320079905 CN203144555U (en) | 2013-02-21 | 2013-02-21 | Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320079905 CN203144555U (en) | 2013-02-21 | 2013-02-21 | Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace |
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| CN203144555U true CN203144555U (en) | 2013-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201320079905 Expired - Fee Related CN203144555U (en) | 2013-02-21 | 2013-02-21 | Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614772A (en) * | 2013-12-13 | 2014-03-05 | 光为绿色新能源股份有限公司 | Polysilicon ingot heating method and polysilicon ingot furnace utilizing same |
| CN109745718A (en) * | 2017-11-05 | 2019-05-14 | 丹阳市宏光机械有限公司 | A kind of heating evaporation device that can carry out having core and centreless heating |
-
2013
- 2013-02-21 CN CN 201320079905 patent/CN203144555U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103614772A (en) * | 2013-12-13 | 2014-03-05 | 光为绿色新能源股份有限公司 | Polysilicon ingot heating method and polysilicon ingot furnace utilizing same |
| CN109745718A (en) * | 2017-11-05 | 2019-05-14 | 丹阳市宏光机械有限公司 | A kind of heating evaporation device that can carry out having core and centreless heating |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130821 Termination date: 20150221 |
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| EXPY | Termination of patent right or utility model |