CN205907394U - Polycrystalline silicon ingot furnace is with six heating device - Google Patents
Polycrystalline silicon ingot furnace is with six heating device Download PDFInfo
- Publication number
- CN205907394U CN205907394U CN201620909997.7U CN201620909997U CN205907394U CN 205907394 U CN205907394 U CN 205907394U CN 201620909997 U CN201620909997 U CN 201620909997U CN 205907394 U CN205907394 U CN 205907394U
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- heater
- crucible
- polycrystalline silicon
- silicon ingot
- power supply
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Abstract
The utility model discloses a polycrystalline silicon ingot furnace is with six heating device, laying at the lateral part heater in four lateral walls outsides of crucible respectively and laying the bottom heater in the crucible below including the top heater that lays the crucible top in the polycrystalline silicon ingot furnace, four, the crucible is the cube crucible, the crucible is the level to be laid, and top heater and bottom heater all are the level and lay, and it is vertical to laying that four lateral part heaters all are, top heater, bottom heater and four lateral part heater equipartitions are located in the polycrystalline silicon ingot furnace. The utility model has the advantages of simple structure and reasonable design and use easy and simple to handle, excellent in use effect, through add in the crucible below bottom heater in to the crucible silicon material carry out six heating, can solve that current polycrystalline silicon ingot furnace institute adopts the melting efficiency of five heating structure existence lower, gas is difficult to to get rid of bottom the crucible, the higher scheduling problem of oxygen content bottom the ingot casting finished product.
Description
Technical field
This utility model belongs to polycrystalline silicon ingot casting technical field, especially relates to a kind of hexahedro heating of polycrystalline silicon ingot or purifying furnace
Device.
Background technology
Photovoltaic generation is one of currently the most important clean energy resource, has great development potentiality.Restriction photovoltaic industry is sent out
The key factor of exhibition, is on the one hand that electricity conversion is low, is on the other hand high expensive.Photovoltaic silicon wafer is to produce solar-electricity
Pond and the stock of assembly, for produce photovoltaic silicon wafer polysilicon purity must (i.e. non-silicon impurity always contains more than 6n level
Amount is in below 1ppm), otherwise the performance of photovoltaic cell will be subject to very big negatively affecting.In recent years, polysilicon chip production technology
There is marked improvement, polycrystalline cast ingot technology arrives from g4 (each silicon ingot weighs about 270 kilograms, can cut 4 × 4=16 silicon side) progress
G5 (5 × 5=25 silicon side), then g6 (6 × 6=36 silicon side) is arrived in progress again.And, the unit of produced polycrystalline silicon ingot casting
Volume incrementally increases, and yield rate increases, and the manufacturing cost of unit volume polycrystalline silicon ingot casting gradually reduces.
In actual production process, during solar energy polycrystalline silicon ingot casting, silicon material need to be loaded using silica crucible, and silicon material is thrown
After entering silica crucible, also need under normal circumstances preheated, fusing (also referred to as melt), long crystalline substance (also referred to as directional solidification crystallization), annealing,
The steps such as cooling, just can complete polycrystalline silicon ingot casting process.Actual when carrying out polycrystalline silicon ingot casting, the control of melt process is not only direct
Impact ingot casting efficiency, and quality and the yield rate of ingot casting finished product can be directly influenced, melt process control is bad, may lead to
Viscous crucible, crystalline substance split, the low defect of purity, directly affect yield rate.The heater that existing polycrystalline silicon ingot or purifying furnace is adopted generally is
Five face heating arrangements, are provided with heater at the top of crucible and four side-wall outer side, this five face mode of heatings from
Upper and under carry out heat radiation, melting efficiency is relatively low, and crucible bottom gas is difficult to exclude simultaneously, makes the oxygen content of ingot casting finished product bottom
Higher.
Utility model content
Technical problem to be solved in the utility model is, for above-mentioned deficiency of the prior art, to provide a kind of polycrystalline
The hexahedro heater of silicon ingot furnace, its structure is simple, reasonable in design and good, by earthenware using easy and simple to handle, using effect
Set up bottom heater below crucible and hexahedro heating is carried out to silicon material in crucible, existing polycrystalline silicon ingot or purifying furnace can be solved and adopted five faces
Heating arrangement exist melting efficiency is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher etc. asks
Topic.
For solving above-mentioned technical problem, the technical solution adopted in the utility model is: a kind of polycrystalline silicon ingot or purifying furnace is with hexahedro
Heater it is characterised in that: the top heater above crucible that includes being laid in polycrystalline silicon ingot or purifying furnace, four difference cloth
It is located at the side heater of four side-wall outer side of crucible and is laid in bottom heater below crucible, described crucible is cube
Body crucible；Described crucible is in horizontal layout, described top heater and bottom heater all in horizontal layout, four described sidepieces
Heater is all in vertically to laying；Described top heater, bottom heater and four described side heater are all laid in institute
State in polycrystalline silicon ingot or purifying furnace.
A kind of above-mentioned hexahedro heater of polycrystalline silicon ingot or purifying furnace, is characterized in that: described bottom heater is fixed on support
On the ds block of crucible bottom, described bottom heater is located at below ds block, described bottom heater top and ds block bottom it
Between distance be 0.5cm～3cm.
A kind of above-mentioned hexahedro heater of polycrystalline silicon ingot or purifying furnace, is characterized in that: also includes top heater, bottom are added
The heating power adjusting means that the heating power of hot device and four described side heater is adjusted respectively, described top firing
Device, bottom heater and four described side heater are all connected with heating power adjusting means.
A kind of above-mentioned hexahedro heater of polycrystalline silicon ingot or purifying furnace, is characterized in that: described top heater passes through the first electricity
Pole is connected with top firing power supply, and four described side heater are all connected with sidepiece heating power supply by second electrode, described
Bottom heater is connected with bottom-heated power supply by the 3rd electrode；Described top firing power supply, sidepiece heating power supply and bottom
Heating power supply is all connected with heating power adjusting means, and described heating power adjusting means is that top firing power supply, sidepiece are added
The PCU Power Conditioning Unit that the output of thermoelectric generator and bottom-heated power supply is adjusted respectively.
A kind of above-mentioned hexahedro heater of polycrystalline silicon ingot or purifying furnace, is characterized in that: described bottom heater is located at crucible
Underface.
A kind of above-mentioned hexahedro heater of polycrystalline silicon ingot or purifying furnace, is characterized in that: described top heater, side heater
It is resistance heater with bottom heater.
This utility model compared with prior art has the advantage that
1st, structure is simple, reasonable in design and input cost is relatively low.
2nd, install and lay simplicity.
3rd, the variation to existing polycrystalline silicon ingot or purifying furnace is less, only need to set up bottom heater below crucible, and
Bottom heater is fixed on the ds block being supported in crucible bottom, fixing easy.
4th, top heater, bottom heater and side heater are using each independent power supply, top heater, bottom
Heater and side heater can individually be controlled and the heating power of three can separate and is individually controlled, now controlling party
Formula has the advantage that first, more energy-conservation, such as can reduce the heat time heating time of side heater in crystal growing stage, thus reaching
To the purpose reducing h eating power, effectively can reduce the unit interval simultaneously in the heat taken away of cooling water, thus indirectly reducing
The load of power refrigeration equipment；Secondth, thermal field can be better controled over, because top heater, bottom heater and sidepiece add
Hot device can individually be controlled, and simplicity can realize the purpose that top heater, bottom heater and side heater separately heat,
So as to reach the purpose of effective control thermal field；3rd, for crystal growing process, there is very big improvement result, be conducive to
Polycrystalline silicon ingot or purifying furnace is internally formed vertical gradient thermal field evenly, thus better controling over long crystalline substance speed so that long crystal boundary face
More gentle, thus reducing the unfavorable factors such as shade, red sector；The 4th, the load carrying can effectively be mitigated on main line, effectively subtract
Electric current superposition amount on few main line, thus reducing line load amount, has certain protective effect for bus and switchgear house；The
5th, the service life of internal thermal field can be extended, such as reduce the heat time heating time of side heater in crystal growing stage after, can effectively reduce
The thermo-contact time to adjacent warming plate for the side heater, thus extend the service life of internal insulation plate and thermal field.
5th, using effect is good and practical value is high, change existing polycrystalline silicon ingot or purifying furnace adopt five face heating arrangements from upper and
Under carry out thermal-radiating mode of heating, after setting up bottom heater below crucible, formed one from upper and lower, left and right, front and
The hexahedro heating arrangement that six direction is heated to silicon material in crucible afterwards, can not only improve melting efficiency, and can effectively carry
The rate of heat addition of crucible bottom during high melt, is conducive to crucible bottom gas to discharge, and reduces ingot casting finished product so as to effective
Bottom oxygen content, yield rate and the quality of ingot casting finished product can be significantly improved.
In sum, this utility model structure is simple, reasonable in design and good using easy and simple to handle, using effect, by
Set up bottom heater below crucible and hexahedro heating is carried out to silicon material in crucible, existing polycrystalline silicon ingot or purifying furnace can be solved and adopted five
The melting efficiency that face heating arrangement exists is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher etc.
Problem.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Brief description
Fig. 1 is structural representation of the present utility model.
Fig. 2 is schematic block circuit diagram of the present utility model.
Description of reference numerals:
1 crucible；2 top heater；2-1 top firing power supply；
3 bottom heaters；3-1 bottom-heated power supply；4 side heater；
4-1 sidepiece heating power supply；5 ds blocks；6 heating power adjusting meanss.
Specific embodiment
As shown in figure 1, this utility model include being laid in polycrystalline silicon ingot or purifying furnace the top heater 2 of crucible 1 top,
The side heater 4 of four four side-wall outer side being laid in crucible 1 respectively and the bottom heater 3 being laid in crucible 1 lower section,
Described crucible 1 is cube crucible；Described crucible 1 is in horizontal layout, and described top heater 2 and bottom heater 3 are all in water
Plain cloth sets, and four described side heater 4 are all in vertically to laying；Described top heater 2, bottom heater 3 and four institutes
State side heater 4 to be all laid in described polycrystalline silicon ingot or purifying furnace.
In the present embodiment, described bottom heater 3 is fixed on the ds block 5 being supported in crucible 1 bottom, described bottom-heated
Device 3 is located at below ds block 5, and the distance between described bottom heater 3 top and ds block 5 bottom are 0.5cm～3cm.
During actual installation, can according to specific needs the distance between bottom heater 3 top and ds block 5 bottom be carried out
Corresponding regulation.
Wherein, ds block 5 is graphite block, and the heat conductivity of described graphite block is very strong.Described ds block 5 be also referred to as directional solidification block or
ds-block.
As shown in Fig. 2 this utility model is also included to top heater 2, bottom heater 3 and four described sidepiece heating
The heating power adjusting means 6 that the heating power of device 4 is adjusted respectively, described top heater 2, bottom heater 3 and four
Individual described side heater 4 is all connected with heating power adjusting means 6.
In the present embodiment, described top heater 2 is connected with top firing power supply 2-1, described in four by first electrode
Side heater 4 is all connected with sidepiece heating power supply 4-1 by second electrode, described bottom heater 3 pass through the 3rd electrode with
Bottom-heated power supply 3-1 connects；Described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 all with
Heating power adjusting means 6 connects, and described heating power adjusting means 6 is to top firing power supply 2-1, sidepiece heating power supply 4-
The PCU Power Conditioning Unit that 1 and bottom-heated power supply 3-1 output is adjusted respectively.
Thus, described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 are power adjustable
Economize on electricity source, and top heater 2, bottom heater 3 are respectively adopted three different power supplys with four described side heater 4
(i.e. described top firing power supply, described sidepiece heating power supply and described bottom-heated power supply), enables top heater 2, bottom
Portion's heater 3 and the independent control of side heater 4, using easy and simple to handle and using effect is good.
In the present embodiment, described heating power adjusting means 6 includes three heating power adjustment equipments, adds described in three
Thermal power adjustment equipment is respectively the first heating power adjustment equipment that the heating power of top heater 2 is adjusted, right
The second heating power adjustment equipment that the heating power of bottom heater 3 is adjusted and to four described side heater 4
Heating power synchronizes the 3rd heating power adjustment equipment of regulation.
When actually used, three described heating power adjustment equipments can also share a described heating power regulation and set
Standby, only need to reach the purpose that three described power supplys are respectively controlled.
In the present embodiment, described bottom heater 3 is located at the underface of crucible 1.
In the present embodiment, described top heater 2, side heater 4 and bottom heater 3 are resistance heater.
Wherein, described top heater 2 and side heater 4 are the existing heating that existing polycrystalline silicon ingot or purifying furnace adopts
Device, the structure of described top heater 2 and four described side heater 4 and installation position are existing polycrystalline silicon ingot or purifying furnace phase
With.Each described side heater 4 is in parallel laying all with the side wall of crucible 1 on its inside.
In the present embodiment, the resistance wire material of described bottom heater 3 is the alloy cpd such as ni, cr, mn.
The above, be only preferred embodiment of the present utility model, not this utility model imposed any restrictions, every
Any simple modification, change and equivalent structure change above example made according to this utility model technical spirit, all still
Belong in the protection domain of technical solutions of the utility model.
Claims (6)
1. a kind of polycrystalline silicon ingot or purifying furnace with hexahedro heater it is characterised in that: include being laid in earthenware in polycrystalline silicon ingot or purifying furnace
Top heater (2) above crucible (1), the side heater (4) of four four side-wall outer side being laid in crucible (1) respectively and
It is laid in the bottom heater (3) below crucible (1), described crucible (1) is cube crucible；Described crucible (1) is in horizontal cloth
If, all in horizontal layout, four described side heater (4) are all in vertically for described top heater (2) and bottom heater (3)
To laying；Described top heater (2), bottom heater (3) and four described side heater (4) are all laid in described polycrystalline
In silicon ingot furnace.
2. according to a kind of polycrystalline silicon ingot or purifying furnace described in claim 1 with hexahedro heater it is characterised in that: described bottom adds
Hot device (3) is fixed on the ds block (5) being supported in crucible (1) bottom, and described bottom heater (3) is located at below ds block (5), institute
Stating the distance between bottom heater (3) top and ds block (5) bottom is 0.5cm～3cm.
3. according to a kind of polycrystalline silicon ingot or purifying furnace described in claim 1 or 2 with hexahedro heater it is characterised in that: also include
The heating power of top heater (2), bottom heater (3) and four described side heater (4) is adjusted respectively
Heating power adjusting means (6), described top heater (2), bottom heater (3) and four described side heater (4) are all
It is connected with heating power adjusting means (6).
4. according to a kind of polycrystalline silicon ingot or purifying furnace described in claim 3 with hexahedro heater it is characterised in that: described top adds
Hot device (2) is connected with top firing power supply (2-1) by first electrode, and four described side heater (4) are all by the second electricity
Pole is connected with sidepiece heating power supply (4-1), and described bottom heater (3) passes through the 3rd electrode with bottom-heated power supply (3-1) even
Connect；Described top firing power supply (2-1), sidepiece heating power supply (4-1) and bottom-heated power supply (3-1) are all adjusted with heating power
Device (6) connect, described heating power adjusting means (6) be to top firing power supply (2-1), sidepiece heating power supply (4-1) and
The PCU Power Conditioning Unit that the output of bottom-heated power supply (3-1) is adjusted respectively.
5. according to a kind of polycrystalline silicon ingot or purifying furnace described in claim 1 or 2 with hexahedro heater it is characterised in that: described bottom
Portion's heater (3) is located at the underface of crucible (1).
6. according to a kind of polycrystalline silicon ingot or purifying furnace described in claim 1 or 2 with hexahedro heater it is characterised in that: described top
Portion's heater (2), side heater (4) and bottom heater (3) are resistance heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620909997.7U CN205907394U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon ingot furnace is with six heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620909997.7U CN205907394U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon ingot furnace is with six heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205907394U true CN205907394U (en) | 2017-01-25 |
Family
ID=57801338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620909997.7U Expired - Fee Related CN205907394U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon ingot furnace is with six heating device |
Country Status (1)
| Country | Link |
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| CN (1) | CN205907394U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111254493A (en) * | 2020-03-04 | 2020-06-09 | 浙江晶阳机电股份有限公司 | Improved heating structure and heating method for silicon core ingot furnace |
-
2016
- 2016-08-19 CN CN201620909997.7U patent/CN205907394U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111254493A (en) * | 2020-03-04 | 2020-06-09 | 浙江晶阳机电股份有限公司 | Improved heating structure and heating method for silicon core ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170125 Termination date: 20210819 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |