CN205907393U - Polycrystalline silicon is heating system for ingot casting based on boosting - Google Patents
Polycrystalline silicon is heating system for ingot casting based on boosting Download PDFInfo
- Publication number
- CN205907393U CN205907393U CN201620909627.3U CN201620909627U CN205907393U CN 205907393 U CN205907393 U CN 205907393U CN 201620909627 U CN201620909627 U CN 201620909627U CN 205907393 U CN205907393 U CN 205907393U
- Authority
- CN
- China
- Prior art keywords
- heater
- heating
- polycrystalline silicon
- crucible
- silicon ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a polycrystalline silicon is heating system for ingot casting based on boosting, including the master controller, lay six heating device in the polycrystalline silicon ingot furnace and carry out real -time detection's temperature -detecting device to six heating device's heating temperature, six heating device include auxiliary heater, are located top heater and four lateral part heaters of laying respectively in four lateral walls outsides of crucible of the crucible top of polycrystalline silicon ingot furnace, auxiliary heater is for laying the bottom heater in the crucible below, temperature -detecting device includes hot topping temperature detecting element, lateral part heating temperature detecting element and bottom heating temperature detecting element, be provided with the section of thick bamboo that keeps warm in the polycrystalline silicon ingot furnace, six heating device are located the section of thick bamboo that keeps warm. The utility model has the advantages of simple structure and reasonable design and use easy and simple to handle, excellent in use effect, adopts six heating device in to the crucible silicon material heat, can solve the multiple problem that has five heating structure existence that the polycrystalline silicon ingot furnace adopts now.
Description
Technical field
This utility model belongs to polycrystalline silicon ingot casting technical field, especially relates to a kind of polysilicon casting based on auxiliary heating
Ingot heating system.
Background technology
Photovoltaic generation is one of currently the most important clean energy resource, has great development potentiality.Restriction photovoltaic industry is sent out
The key factor of exhibition, is on the one hand that electricity conversion is low, is on the other hand high expensive.Photovoltaic silicon wafer is to produce solar-electricity
Pond and the stock of assembly, for produce photovoltaic silicon wafer polysilicon purity must (i.e. non-silicon impurity always contains more than 6n level
Amount is in below 1ppm), otherwise the performance of photovoltaic cell will be subject to very big negatively affecting.In recent years, polysilicon chip production technology
There is marked improvement, polycrystalline cast ingot technology arrives from g4 (each silicon ingot weighs about 270 kilograms, can cut 4 × 4=16 silicon side) progress
G5 (5 × 5=25 silicon side), then g6 (6 × 6=36 silicon side) is arrived in progress again.And, the unit of produced polycrystalline silicon ingot casting
Volume incrementally increases, and yield rate increases, and the manufacturing cost of unit volume polycrystalline silicon ingot casting gradually reduces.
In actual production process, during solar energy polycrystalline silicon ingot casting, silicon material need to be loaded using silica crucible, and silicon material is thrown
After entering silica crucible, also need under normal circumstances preheated, fusing (also referred to as melt), long crystalline substance (also referred to as directional solidification crystallization), annealing,
The steps such as cooling, just can complete polycrystalline silicon ingot casting process.Actual when carrying out polycrystalline silicon ingot casting, the control of melt process is not only direct
Impact ingot casting efficiency, and quality and the yield rate of ingot casting finished product can be directly influenced, melt process control is bad, may lead to
Viscous crucible, crystalline substance split, the low defect of purity, directly affect yield rate.The heater that existing polycrystalline silicon ingot or purifying furnace is adopted generally is
Five face heating arrangements, are provided with heater at the top of crucible and four side-wall outer side, this five face mode of heatings from
Upper and under carry out heat radiation, melting efficiency is relatively low, simultaneously crucible bottom gas be difficult to exclude, make the oxygen-containing of ingot casting finished product bottom
Amount is higher.
Utility model content
Technical problem to be solved in the utility model is, for above-mentioned deficiency of the prior art, to provide one kind to be based on
The polycrystalline silicon ingot casting heating system of auxiliary heating, its structure is simple, reasonable in design and good using easy and simple to handle, using effect,
Using hexahedro heater, silicon material in crucible is heated, existing polycrystalline silicon ingot or purifying furnace can be solved and adopted five face heating arrangements
Exist the problems such as melting efficiency is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher.
For solving above-mentioned technical problem, the technical solution adopted in the utility model is: a kind of polycrystalline based on auxiliary heating
Silicon ingot casting heating system it is characterised in that: include main controller, the hexahedro heater that is laid in polycrystalline silicon ingot or purifying furnace and right
The heating-up temperature of described hexahedro heater carries out the temperature-detecting device of real-time detection, and described hexahedro heater includes assisting
Top heater above heater, the crucible being located in polycrystalline silicon ingot or purifying furnace and four four side walls being laid in crucible respectively
The side heater in outside, described auxiliary heater is the bottom heater being laid in below crucible；Described temperature-detecting device
Including the heating-up temperature of top heater is carried out the top firing temperature detecting unit of real-time detection, counter-lateral quadrents heater plus
Hot temperature carries out the sidepiece heating-up temperature detector unit of real-time detection and carries out real-time detection to the heating-up temperature of bottom heater
Bottom-heated temperature detecting unit, described top firing temperature detecting unit, sidepiece heating-up temperature detector unit and bottom add
Hot temperature detecting unit is all connected with main controller；It is provided with heat-preservation cylinder, described hexahedro heater in described polycrystalline silicon ingot or purifying furnace
In heat-preservation cylinder；For cube crucible and it is in horizontal layout to described crucible, and described top heater and bottom heater are equal
In horizontal layout, four described side heater are all in vertically to laying.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described bottom heater is fixed on
It is supported on the ds block of crucible bottom, the distance between described bottom heater top and ds block bottom are 0.5cm～3cm.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: also include to top heater, bottom
The heating power adjusting means that the heating power of portion's heater and four described side heater is adjusted respectively, described top
Heater, bottom heater and four described side heater are all connected with heating power adjusting means；Described heating power is adjusted
Regulating device is connected with main controller.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described top heater passes through the
One electrode is connected with top firing power supply, and four described side heater are all connected with sidepiece heating power supply by second electrode,
Described bottom heater is connected with bottom-heated power supply by the 3rd electrode；Described top firing power supply, sidepiece heating power supply and
Bottom-heated power supply is all connected with heating power adjusting means, and described heating power adjusting means is to top firing power supply, side
The PCU Power Conditioning Unit that the output of portion's heating power supply and bottom-heated power supply is adjusted respectively.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described bottom heater is located at earthenware
The underface of crucible.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: also includes respectively with main controller even
The parameter set unit connecing and display unit.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: outside four side walls of described crucible
Side is provided with crucible guard boards, and described side heater is located at outside crucible guard boards；Described crucible guard boards are to laying in vertically
Graphite cake.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described top heater, sidepiece add
Hot device and bottom heater are resistance heater.
This utility model compared with prior art has the advantage that
1st, structure is simple, reasonable in design and input cost is relatively low, mainly includes main controller, is laid in polycrystalline silicon ingot or purifying furnace
Hexahedro heater and the temperature-detecting device that the heating-up temperature of hexahedro heater is carried out with real-time detection.
2nd, the hexahedro heater being adopted is installed and is laid simplicity, and to existing polycrystalline silicon ingot or purifying furnace inner heating device
Change less, only need to set up bottom heater below crucible, and bottom heater is fixed on and is supported in crucible bottom
Ds block on, fixing easy.
3rd, in the hexahedro heater being adopted, top heater, bottom heater and side heater are using each independent
Power supply, top heater, bottom heater and side heater can individually be controlled and the heating power of three can separately
Individually be controlled, now control mode have the advantage that first, more energy-conservation, such as can reduce sidepiece in crystal growing stage
The heat time heating time of heater, thus reach reduce h eating power purpose, effectively can reduce the unit interval simultaneously in cooling water band
The heat walked, thus indirectly decrease the load of power refrigeration equipment；Secondth, thermal field can be better controled over, due to top plus
Hot device, bottom heater and side heater can individually be controlled, and simplicity can realize top heater, bottom heater and side
The purpose that portion's heater separately heats, so as to reach the purpose of effective control thermal field；3rd, crystal growing process is had
Very big improvement result, is conducive to being internally formed vertical gradient thermal field evenly in polycrystalline silicon ingot or purifying furnace, thus preferably controlling
Make long crystalline substance speed so that long crystal boundary face is gentler, thus reducing the unfavorable factors such as shade, red sector；4th, master can effectively be mitigated
The load carrying on circuit, effectively reduces the electric current superposition amount on main line, thus reducing line load amount, for bus with join
There is certain protective effect electric room；5th, the service life of internal thermal field can be extended, such as reduce side heater in crystal growing stage
Heat time heating time after, can effectively reduce the thermo-contact time to adjacent warming plate for the side heater, thus extending internal insulation plate
And the service life of thermal field.
4th, using easy and simple to handle, real-time detection is carried out simultaneously to the heating-up temperature of hexahedro heater by temperature-detecting device
Institute's detection temperature synchronizing information is sent to main controller, then by main controller to the hexahedro heating being laid in polycrystalline silicon ingot or purifying furnace
Device is controlled.
5th, using effect is good and practical value is high, change existing polycrystalline silicon ingot or purifying furnace adopt five face heating arrangements from upper and
Under carry out thermal-radiating mode of heating, after setting up bottom heater below crucible, formed one from upper and lower, left and right, front and
The hexahedro heating arrangement that six direction is heated to silicon material in crucible afterwards, and control simplicity, temperature control process is easily controllable, no
It is only capable of improving melting efficiency, and the rate of heat addition of crucible bottom during melt can be effectively improved, be conducive to crucible bottom gas
Body is discharged, and so as to effective bottom oxygen content reducing ingot casting finished product, can significantly improve yield rate and the quality of ingot casting finished product.
In sum, this utility model structure is simple, reasonable in design and good using easy and simple to handle, using effect, adopts six
Face heater heats to silicon material in crucible, can solve existing polycrystalline silicon ingot or purifying furnace and be adopted five face heating arrangements to exist
The problems such as melting efficiency is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Brief description
Fig. 1 is structural representation of the present utility model.
Fig. 2 is schematic block circuit diagram of the present utility model.
Description of reference numerals:
1 crucible；2 top heater；2-1 top firing power supply；
3 bottom heaters；3-1 bottom-heated power supply；4 side heater；
4-1 sidepiece heating power supply；5 ds blocks；6 heating power adjusting meanss；
7 crucible guard boards；8 main controllers；9 polycrystalline silicon ingot or purifying furnaces；
10 top firing temperature detecting units；
11 sidepiece heating-up temperature detector units；
12 bottom-heated temperature detecting units；13 heat-preservation cylinders；
14 pressure pins；15 display units；16 parameter set unit.
Specific embodiment
As shown in Figure 1 and Figure 2, this utility model includes main controller 8, the hexahedro heating dress being laid in polycrystalline silicon ingot or purifying furnace 9
Put and the heating-up temperature of described hexahedro heater carried out the temperature-detecting device of real-time detection, described hexahedro heater bag
Include auxiliary heater, the top heater 2 of crucible 1 top being located in polycrystalline silicon ingot or purifying furnace 9 and four and be laid in crucible 1 respectively
Four side-wall outer side side heater 4, described auxiliary heater is the bottom heater 3 being laid in crucible 1 lower section；Described
Temperature-detecting device include the heating-up temperature of top heater 2 is carried out real-time detection top firing temperature detecting unit 10,
The heating-up temperature of counter-lateral quadrents heater 4 carries out the sidepiece heating-up temperature detector unit 11 of real-time detection and to bottom heater 3
Heating-up temperature carries out the bottom-heated temperature detecting unit 12 of real-time detection, described top firing temperature detecting unit 10, sidepiece
Heating-up temperature detector unit 11 and bottom-heated temperature detecting unit 12 are all connected with main controller 8；In described polycrystalline silicon ingot or purifying furnace 9
It is provided with heat-preservation cylinder 13, described hexahedro heater is located in heat-preservation cylinder 13；For cube crucible and it is in level to described crucible 1
Lay, all in horizontal layout, four described side heater 4 are all in vertical to cloth for described top heater 2 and bottom heater 3
If.
In the present embodiment, described bottom heater 3 is fixed on the ds block 5 being supported in crucible 1 bottom, described bottom-heated
The distance between device 3 top and ds block 5 bottom are 0.5cm～3cm.
During actual installation, can according to specific needs the distance between bottom heater 3 top and ds block 5 bottom be carried out
Corresponding regulation.
Wherein, ds block 5 is graphite block, and the heat conductivity of described graphite block is very strong.Described ds block 5 be also referred to as directional solidification block or
ds-block.
In the present embodiment, this utility model also includes top heater 2, bottom heater 3 and four described sidepieces are added
The heating power adjusting means 6 that the heating power of hot device 4 is adjusted respectively, described top heater 2, bottom heater 3 and
Four described side heater 4 are all connected with heating power adjusting means 6；Described heating power adjusting means 6 is with main controller 8 even
Connect.
In the present embodiment, described top heater 2 is connected with top firing power supply 2-1, described in four by first electrode
Side heater 4 is all connected with sidepiece heating power supply 4-1 by second electrode, described bottom heater 3 pass through the 3rd electrode with
Bottom-heated power supply 3-1 connects；Described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 all with
Heating power adjusting means 6 connects, and described heating power adjusting means 6 is to top firing power supply 2-1, sidepiece heating power supply 4-
The PCU Power Conditioning Unit that 1 and bottom-heated power supply 3-1 output is adjusted respectively.
Thus, described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 are power adjustable
Economize on electricity source, and top heater 2, bottom heater 3 are respectively adopted three different power supplys with four described side heater 4
(i.e. described top firing power supply, described sidepiece heating power supply and described bottom-heated power supply), enables top heater 2, bottom
Portion's heater 3 and the independent control of side heater 4, using easy and simple to handle and using effect is good.
In the present embodiment, described heating power adjusting means 6 includes three heating power adjustment equipments, adds described in three
Thermal power adjustment equipment is respectively the first heating power adjustment equipment that the heating power of top heater 2 is adjusted, right
The second heating power adjustment equipment that the heating power of bottom heater 3 is adjusted and to four described side heater 4
Heating power synchronizes the 3rd heating power adjustment equipment of regulation.
When actually used, three described heating power adjustment equipments can also share a described heating power regulation and set
Standby, only need to reach the purpose that three described power supplys are respectively controlled.
In the present embodiment, described bottom heater 3 is located at the underface of crucible 1.
In the present embodiment, described top heater 2, side heater 4 and bottom heater 3 are resistance heater.
Wherein, described top heater 2 and side heater 4 are the existing heating that existing polycrystalline silicon ingot or purifying furnace adopts
Device, the structure of described top heater 2 and four described side heater 4 and installation position are existing polycrystalline silicon ingot or purifying furnace phase
With.Each described side heater 4 is in parallel laying all with the side wall of crucible 1 on its inside.
In the present embodiment, the resistance wire material of described bottom heater 3 is the alloy cpd such as ni, cr, mn.
In the present embodiment, this utility model also includes the parameter set unit 16 being connected respectively with main controller 8 and display is single
Unit 15.
In the present embodiment, four side-wall outer side of described crucible 1 are provided with crucible guard boards 7, described side heater 4
Outside crucible guard boards 7；Described crucible guard boards 7 are in vertically to the graphite cake laid.
Meanwhile, it is additionally provided with pressure pin 14 below described crucible 1.
During actual installation, described top heater 2 and four described side heater 4 are all lifted on polycrystalline by lifting part
On the top cover of silicon ingot furnace 9.
The above, be only preferred embodiment of the present utility model, not this utility model imposed any restrictions, every
Any simple modification, change and equivalent structure change above example made according to this utility model technical spirit, all still
Belong in the protection domain of technical solutions of the utility model.
Claims (8)
1. a kind of based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: include main controller (8), be laid in
Hexahedro heater in polycrystalline silicon ingot or purifying furnace (9) and the heating-up temperature to described hexahedro heater carry out the temperature of real-time detection
Degree detection means, described hexahedro heater include auxiliary heater, be located at polycrystalline silicon ingot or purifying furnace (9) in crucible (1) above
Top heater (2) and four four side-wall outer side being laid in crucible (1) respectively side heater (4), described auxiliary
Heater is the bottom heater (3) being laid in below crucible (1)；Described temperature-detecting device is included to top heater (2)
Heating-up temperature carry out the top firing temperature detecting unit (10) of real-time detection, the heating-up temperature of counter-lateral quadrents heater (4) is entered
Sidepiece heating-up temperature detector unit (11) of row real-time detection and real-time detection is carried out to the heating-up temperature of bottom heater (3)
Bottom-heated temperature detecting unit (12), described top firing temperature detecting unit (10), sidepiece heating-up temperature detector unit
(11) all it is connected with main controller (8) with bottom-heated temperature detecting unit (12)；It is provided with guarantor in described polycrystalline silicon ingot or purifying furnace (9)
Warm cylinder (13), described hexahedro heater is located in heat-preservation cylinder (13)；For cube crucible and it is in horizontal cloth to described crucible (1)
If, all in horizontal layout, four described side heater (4) are all in vertically for described top heater (2) and bottom heater (3)
To laying.
2. according to described in claim 1 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: described bottom
Portion's heater (3) is fixed on the ds block (5) being supported in crucible (1) bottom, described bottom heater (3) top and ds block (5)
The distance between bottom is 0.5cm～3cm.
3. according to the polycrystalline silicon ingot casting heating system based on auxiliary heating described in claim 1 or 2 it is characterised in that: also
Adjust respectively including to the heating power of top heater (2), bottom heater (3) and four described side heater (4)
The heating power adjusting means (6) of section, described top heater (2), bottom heater (3) and four described side heater
(4) all it is connected with heating power adjusting means (6)；Described heating power adjusting means (6) is connected with main controller (8).
4. according to described in claim 3 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: described top
Portion's heater (2) is connected with top firing power supply (2-1) by first electrode, and four described side heater (4) are all by
Two electrodes are connected with sidepiece heating power supply (4-1), and described bottom heater (3) passes through the 3rd electrode and bottom-heated power supply (3-
1) connect；Described top firing power supply (2-1), sidepiece heating power supply (4-1) and bottom-heated power supply (3-1) are all and heating power
Adjusting means (6) connects, and described heating power adjusting means (6) is to top firing power supply (2-1), sidepiece heating power supply (4-
1) and bottom-heated power supply (3-1) the PCU Power Conditioning Unit that is adjusted respectively of output.
5. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute
State the underface that bottom heater (3) is located at crucible (1).
6. according to the polycrystalline silicon ingot casting heating system based on auxiliary heating described in claim 1 or 2 it is characterised in that: also
Including the parameter set unit (16) being connected with main controller (8) respectively and display unit (15).
7. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute
Four side-wall outer side stating crucible (1) are provided with crucible guard boards (7), and described side heater (4) is located at crucible guard boards (7) outward
Side；Described crucible guard boards (7) are in vertically to the graphite cake laid.
8. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute
State top heater (2), side heater (4) and bottom heater (3) and be resistance heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620909627.3U CN205907393U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon is heating system for ingot casting based on boosting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620909627.3U CN205907393U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon is heating system for ingot casting based on boosting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205907393U true CN205907393U (en) | 2017-01-25 |
Family
ID=57801277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620909627.3U Expired - Fee Related CN205907393U (en) | 2016-08-19 | 2016-08-19 | Polycrystalline silicon is heating system for ingot casting based on boosting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205907393U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959917A (en) * | 2022-07-08 | 2022-08-30 | 安徽冠宇光电科技有限公司 | Solar polycrystalline silicon ingot furnace |
-
2016
- 2016-08-19 CN CN201620909627.3U patent/CN205907393U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959917A (en) * | 2022-07-08 | 2022-08-30 | 安徽冠宇光电科技有限公司 | Solar polycrystalline silicon ingot furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102330148B (en) | Polysilicon ingot casting method with low defect and high output and thermal field structure thereof | |
| CN102162125B (en) | Thermal field structure of polysilicon ingot casting furnace | |
| CN204022995U (en) | A kind of novel ingot furnace thermal field structure | |
| CN102108544A (en) | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface | |
| CN106087044A (en) | A kind of polycrystalline silicon ingot casting melt method based on auxiliary heating | |
| CN106087053A (en) | A kind of polycrystalline silicon ingot casting method | |
| CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
| CN205907393U (en) | Polycrystalline silicon is heating system for ingot casting based on boosting | |
| CN102409402A (en) | Ingot casting process for 650kg polycrystalline silicon | |
| CN106048718B (en) | A kind of polysilicon fritting ingot casting sundries discharging method | |
| CN205907394U (en) | Polycrystalline silicon ingot furnace is with six heating device | |
| CN106119956B (en) | A kind of polysilicon fritting casting ingot method | |
| CN106283182B (en) | A kind of polycrystalline silicon casting ingot process | |
| CN102912414A (en) | Polycrystalline silicon ingot production furnace and crucible thereof | |
| CN106087043A (en) | A kind of polysilicon fritting casting ingot method and device | |
| CN103696002B (en) | The ingot furnace thermal field structure of electromagnetism and resistance Hybrid Heating and using method | |
| CN206768277U (en) | A kind of side heater for polycrystalline ingot furnace | |
| CN108866622A (en) | The heating system and its operation method of polycrystalline ingot furnace | |
| CN203144557U (en) | Bidirectional enhanced gas cooling device in crystal growth device | |
| CN106222740A (en) | A kind of polycrystalline silicon ingot casting method reducing oxygen content bottom polycrystalline silicon ingot casting | |
| CN204281893U (en) | A kind of directional solidification thermal-preservation thermal field | |
| CN203144555U (en) | Electromagnetic induction heating system at bottom of polycrystalline silicon ingot furnace | |
| CN106087045B (en) | A kind of polysilicon fritting ingot casting melt and crystal growing technology | |
| CN208151524U (en) | It is layered snakelike polycrystalline silicon ingot casting graphite side heater | |
| KR101196378B1 (en) | Manufacturing equipment for polysilicon ingot comprising multi-crucible |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170125 Termination date: 20210819 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |