CN205907393U - Polycrystalline silicon is heating system for ingot casting based on boosting - Google Patents

Polycrystalline silicon is heating system for ingot casting based on boosting Download PDF

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Publication number
CN205907393U
CN205907393U CN201620909627.3U CN201620909627U CN205907393U CN 205907393 U CN205907393 U CN 205907393U CN 201620909627 U CN201620909627 U CN 201620909627U CN 205907393 U CN205907393 U CN 205907393U
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China
Prior art keywords
heater
heating
polycrystalline silicon
crucible
silicon ingot
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CN201620909627.3U
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Chinese (zh)
Inventor
刘波波
李建军
贺鹏
虢虎平
史燕凯
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XI'AN HUAJING ELECTRONIC TECHNOLOGY Co Ltd
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XI'AN HUAJING ELECTRONIC TECHNOLOGY Co Ltd
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Abstract

The utility model discloses a polycrystalline silicon is heating system for ingot casting based on boosting, including the master controller, lay six heating device in the polycrystalline silicon ingot furnace and carry out real -time detection's temperature -detecting device to six heating device's heating temperature, six heating device include auxiliary heater, are located top heater and four lateral part heaters of laying respectively in four lateral walls outsides of crucible of the crucible top of polycrystalline silicon ingot furnace, auxiliary heater is for laying the bottom heater in the crucible below, temperature -detecting device includes hot topping temperature detecting element, lateral part heating temperature detecting element and bottom heating temperature detecting element, be provided with the section of thick bamboo that keeps warm in the polycrystalline silicon ingot furnace, six heating device are located the section of thick bamboo that keeps warm. The utility model has the advantages of simple structure and reasonable design and use easy and simple to handle, excellent in use effect, adopts six heating device in to the crucible silicon material heat, can solve the multiple problem that has five heating structure existence that the polycrystalline silicon ingot furnace adopts now.

Description

Polycrystalline silicon ingot casting heating system based on auxiliary heating
Technical field
This utility model belongs to polycrystalline silicon ingot casting technical field, especially relates to a kind of polysilicon casting based on auxiliary heating Ingot heating system.
Background technology
Photovoltaic generation is one of currently the most important clean energy resource, has great development potentiality.Restriction photovoltaic industry is sent out The key factor of exhibition, is on the one hand that electricity conversion is low, is on the other hand high expensive.Photovoltaic silicon wafer is to produce solar-electricity Pond and the stock of assembly, for produce photovoltaic silicon wafer polysilicon purity must (i.e. non-silicon impurity always contains more than 6n level Amount is in below 1ppm), otherwise the performance of photovoltaic cell will be subject to very big negatively affecting.In recent years, polysilicon chip production technology There is marked improvement, polycrystalline cast ingot technology arrives from g4 (each silicon ingot weighs about 270 kilograms, can cut 4 × 4=16 silicon side) progress G5 (5 × 5=25 silicon side), then g6 (6 × 6=36 silicon side) is arrived in progress again.And, the unit of produced polycrystalline silicon ingot casting Volume incrementally increases, and yield rate increases, and the manufacturing cost of unit volume polycrystalline silicon ingot casting gradually reduces.
In actual production process, during solar energy polycrystalline silicon ingot casting, silicon material need to be loaded using silica crucible, and silicon material is thrown After entering silica crucible, also need under normal circumstances preheated, fusing (also referred to as melt), long crystalline substance (also referred to as directional solidification crystallization), annealing, The steps such as cooling, just can complete polycrystalline silicon ingot casting process.Actual when carrying out polycrystalline silicon ingot casting, the control of melt process is not only direct Impact ingot casting efficiency, and quality and the yield rate of ingot casting finished product can be directly influenced, melt process control is bad, may lead to Viscous crucible, crystalline substance split, the low defect of purity, directly affect yield rate.The heater that existing polycrystalline silicon ingot or purifying furnace is adopted generally is Five face heating arrangements, are provided with heater at the top of crucible and four side-wall outer side, this five face mode of heatings from Upper and under carry out heat radiation, melting efficiency is relatively low, simultaneously crucible bottom gas be difficult to exclude, make the oxygen-containing of ingot casting finished product bottom Amount is higher.
Utility model content
Technical problem to be solved in the utility model is, for above-mentioned deficiency of the prior art, to provide one kind to be based on The polycrystalline silicon ingot casting heating system of auxiliary heating, its structure is simple, reasonable in design and good using easy and simple to handle, using effect, Using hexahedro heater, silicon material in crucible is heated, existing polycrystalline silicon ingot or purifying furnace can be solved and adopted five face heating arrangements Exist the problems such as melting efficiency is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher.
For solving above-mentioned technical problem, the technical solution adopted in the utility model is: a kind of polycrystalline based on auxiliary heating Silicon ingot casting heating system it is characterised in that: include main controller, the hexahedro heater that is laid in polycrystalline silicon ingot or purifying furnace and right The heating-up temperature of described hexahedro heater carries out the temperature-detecting device of real-time detection, and described hexahedro heater includes assisting Top heater above heater, the crucible being located in polycrystalline silicon ingot or purifying furnace and four four side walls being laid in crucible respectively The side heater in outside, described auxiliary heater is the bottom heater being laid in below crucible;Described temperature-detecting device Including the heating-up temperature of top heater is carried out the top firing temperature detecting unit of real-time detection, counter-lateral quadrents heater plus Hot temperature carries out the sidepiece heating-up temperature detector unit of real-time detection and carries out real-time detection to the heating-up temperature of bottom heater Bottom-heated temperature detecting unit, described top firing temperature detecting unit, sidepiece heating-up temperature detector unit and bottom add Hot temperature detecting unit is all connected with main controller;It is provided with heat-preservation cylinder, described hexahedro heater in described polycrystalline silicon ingot or purifying furnace In heat-preservation cylinder;For cube crucible and it is in horizontal layout to described crucible, and described top heater and bottom heater are equal In horizontal layout, four described side heater are all in vertically to laying.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described bottom heater is fixed on It is supported on the ds block of crucible bottom, the distance between described bottom heater top and ds block bottom are 0.5cm~3cm.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: also include to top heater, bottom The heating power adjusting means that the heating power of portion's heater and four described side heater is adjusted respectively, described top Heater, bottom heater and four described side heater are all connected with heating power adjusting means;Described heating power is adjusted Regulating device is connected with main controller.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described top heater passes through the One electrode is connected with top firing power supply, and four described side heater are all connected with sidepiece heating power supply by second electrode, Described bottom heater is connected with bottom-heated power supply by the 3rd electrode;Described top firing power supply, sidepiece heating power supply and Bottom-heated power supply is all connected with heating power adjusting means, and described heating power adjusting means is to top firing power supply, side The PCU Power Conditioning Unit that the output of portion's heating power supply and bottom-heated power supply is adjusted respectively.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described bottom heater is located at earthenware The underface of crucible.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: also includes respectively with main controller even The parameter set unit connecing and display unit.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: outside four side walls of described crucible Side is provided with crucible guard boards, and described side heater is located at outside crucible guard boards;Described crucible guard boards are to laying in vertically Graphite cake.
The above-mentioned polycrystalline silicon ingot casting heating system based on auxiliary heating, is characterized in that: described top heater, sidepiece add Hot device and bottom heater are resistance heater.
This utility model compared with prior art has the advantage that
1st, structure is simple, reasonable in design and input cost is relatively low, mainly includes main controller, is laid in polycrystalline silicon ingot or purifying furnace Hexahedro heater and the temperature-detecting device that the heating-up temperature of hexahedro heater is carried out with real-time detection.
2nd, the hexahedro heater being adopted is installed and is laid simplicity, and to existing polycrystalline silicon ingot or purifying furnace inner heating device Change less, only need to set up bottom heater below crucible, and bottom heater is fixed on and is supported in crucible bottom Ds block on, fixing easy.
3rd, in the hexahedro heater being adopted, top heater, bottom heater and side heater are using each independent Power supply, top heater, bottom heater and side heater can individually be controlled and the heating power of three can separately Individually be controlled, now control mode have the advantage that first, more energy-conservation, such as can reduce sidepiece in crystal growing stage The heat time heating time of heater, thus reach reduce h eating power purpose, effectively can reduce the unit interval simultaneously in cooling water band The heat walked, thus indirectly decrease the load of power refrigeration equipment;Secondth, thermal field can be better controled over, due to top plus Hot device, bottom heater and side heater can individually be controlled, and simplicity can realize top heater, bottom heater and side The purpose that portion's heater separately heats, so as to reach the purpose of effective control thermal field;3rd, crystal growing process is had Very big improvement result, is conducive to being internally formed vertical gradient thermal field evenly in polycrystalline silicon ingot or purifying furnace, thus preferably controlling Make long crystalline substance speed so that long crystal boundary face is gentler, thus reducing the unfavorable factors such as shade, red sector;4th, master can effectively be mitigated The load carrying on circuit, effectively reduces the electric current superposition amount on main line, thus reducing line load amount, for bus with join There is certain protective effect electric room;5th, the service life of internal thermal field can be extended, such as reduce side heater in crystal growing stage Heat time heating time after, can effectively reduce the thermo-contact time to adjacent warming plate for the side heater, thus extending internal insulation plate And the service life of thermal field.
4th, using easy and simple to handle, real-time detection is carried out simultaneously to the heating-up temperature of hexahedro heater by temperature-detecting device Institute's detection temperature synchronizing information is sent to main controller, then by main controller to the hexahedro heating being laid in polycrystalline silicon ingot or purifying furnace Device is controlled.
5th, using effect is good and practical value is high, change existing polycrystalline silicon ingot or purifying furnace adopt five face heating arrangements from upper and Under carry out thermal-radiating mode of heating, after setting up bottom heater below crucible, formed one from upper and lower, left and right, front and The hexahedro heating arrangement that six direction is heated to silicon material in crucible afterwards, and control simplicity, temperature control process is easily controllable, no It is only capable of improving melting efficiency, and the rate of heat addition of crucible bottom during melt can be effectively improved, be conducive to crucible bottom gas Body is discharged, and so as to effective bottom oxygen content reducing ingot casting finished product, can significantly improve yield rate and the quality of ingot casting finished product.
In sum, this utility model structure is simple, reasonable in design and good using easy and simple to handle, using effect, adopts six Face heater heats to silicon material in crucible, can solve existing polycrystalline silicon ingot or purifying furnace and be adopted five face heating arrangements to exist The problems such as melting efficiency is relatively low, crucible bottom gas is difficult to exclude, the oxygen content of ingot casting finished product bottom is higher.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Brief description
Fig. 1 is structural representation of the present utility model.
Fig. 2 is schematic block circuit diagram of the present utility model.
Description of reference numerals:
1 crucible;2 top heater;2-1 top firing power supply;
3 bottom heaters;3-1 bottom-heated power supply;4 side heater;
4-1 sidepiece heating power supply;5 ds blocks;6 heating power adjusting meanss;
7 crucible guard boards;8 main controllers;9 polycrystalline silicon ingot or purifying furnaces;
10 top firing temperature detecting units;
11 sidepiece heating-up temperature detector units;
12 bottom-heated temperature detecting units;13 heat-preservation cylinders;
14 pressure pins;15 display units;16 parameter set unit.
Specific embodiment
As shown in Figure 1 and Figure 2, this utility model includes main controller 8, the hexahedro heating dress being laid in polycrystalline silicon ingot or purifying furnace 9 Put and the heating-up temperature of described hexahedro heater carried out the temperature-detecting device of real-time detection, described hexahedro heater bag Include auxiliary heater, the top heater 2 of crucible 1 top being located in polycrystalline silicon ingot or purifying furnace 9 and four and be laid in crucible 1 respectively Four side-wall outer side side heater 4, described auxiliary heater is the bottom heater 3 being laid in crucible 1 lower section;Described Temperature-detecting device include the heating-up temperature of top heater 2 is carried out real-time detection top firing temperature detecting unit 10, The heating-up temperature of counter-lateral quadrents heater 4 carries out the sidepiece heating-up temperature detector unit 11 of real-time detection and to bottom heater 3 Heating-up temperature carries out the bottom-heated temperature detecting unit 12 of real-time detection, described top firing temperature detecting unit 10, sidepiece Heating-up temperature detector unit 11 and bottom-heated temperature detecting unit 12 are all connected with main controller 8;In described polycrystalline silicon ingot or purifying furnace 9 It is provided with heat-preservation cylinder 13, described hexahedro heater is located in heat-preservation cylinder 13;For cube crucible and it is in level to described crucible 1 Lay, all in horizontal layout, four described side heater 4 are all in vertical to cloth for described top heater 2 and bottom heater 3 If.
In the present embodiment, described bottom heater 3 is fixed on the ds block 5 being supported in crucible 1 bottom, described bottom-heated The distance between device 3 top and ds block 5 bottom are 0.5cm~3cm.
During actual installation, can according to specific needs the distance between bottom heater 3 top and ds block 5 bottom be carried out Corresponding regulation.
Wherein, ds block 5 is graphite block, and the heat conductivity of described graphite block is very strong.Described ds block 5 be also referred to as directional solidification block or ds-block.
In the present embodiment, this utility model also includes top heater 2, bottom heater 3 and four described sidepieces are added The heating power adjusting means 6 that the heating power of hot device 4 is adjusted respectively, described top heater 2, bottom heater 3 and Four described side heater 4 are all connected with heating power adjusting means 6;Described heating power adjusting means 6 is with main controller 8 even Connect.
In the present embodiment, described top heater 2 is connected with top firing power supply 2-1, described in four by first electrode Side heater 4 is all connected with sidepiece heating power supply 4-1 by second electrode, described bottom heater 3 pass through the 3rd electrode with Bottom-heated power supply 3-1 connects;Described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 all with Heating power adjusting means 6 connects, and described heating power adjusting means 6 is to top firing power supply 2-1, sidepiece heating power supply 4- The PCU Power Conditioning Unit that 1 and bottom-heated power supply 3-1 output is adjusted respectively.
Thus, described top firing power supply 2-1, sidepiece heating power supply 4-1 and bottom-heated power supply 3-1 are power adjustable Economize on electricity source, and top heater 2, bottom heater 3 are respectively adopted three different power supplys with four described side heater 4 (i.e. described top firing power supply, described sidepiece heating power supply and described bottom-heated power supply), enables top heater 2, bottom Portion's heater 3 and the independent control of side heater 4, using easy and simple to handle and using effect is good.
In the present embodiment, described heating power adjusting means 6 includes three heating power adjustment equipments, adds described in three Thermal power adjustment equipment is respectively the first heating power adjustment equipment that the heating power of top heater 2 is adjusted, right The second heating power adjustment equipment that the heating power of bottom heater 3 is adjusted and to four described side heater 4 Heating power synchronizes the 3rd heating power adjustment equipment of regulation.
When actually used, three described heating power adjustment equipments can also share a described heating power regulation and set Standby, only need to reach the purpose that three described power supplys are respectively controlled.
In the present embodiment, described bottom heater 3 is located at the underface of crucible 1.
In the present embodiment, described top heater 2, side heater 4 and bottom heater 3 are resistance heater.
Wherein, described top heater 2 and side heater 4 are the existing heating that existing polycrystalline silicon ingot or purifying furnace adopts Device, the structure of described top heater 2 and four described side heater 4 and installation position are existing polycrystalline silicon ingot or purifying furnace phase With.Each described side heater 4 is in parallel laying all with the side wall of crucible 1 on its inside.
In the present embodiment, the resistance wire material of described bottom heater 3 is the alloy cpd such as ni, cr, mn.
In the present embodiment, this utility model also includes the parameter set unit 16 being connected respectively with main controller 8 and display is single Unit 15.
In the present embodiment, four side-wall outer side of described crucible 1 are provided with crucible guard boards 7, described side heater 4 Outside crucible guard boards 7;Described crucible guard boards 7 are in vertically to the graphite cake laid.
Meanwhile, it is additionally provided with pressure pin 14 below described crucible 1.
During actual installation, described top heater 2 and four described side heater 4 are all lifted on polycrystalline by lifting part On the top cover of silicon ingot furnace 9.
The above, be only preferred embodiment of the present utility model, not this utility model imposed any restrictions, every Any simple modification, change and equivalent structure change above example made according to this utility model technical spirit, all still Belong in the protection domain of technical solutions of the utility model.

Claims (8)

1. a kind of based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: include main controller (8), be laid in Hexahedro heater in polycrystalline silicon ingot or purifying furnace (9) and the heating-up temperature to described hexahedro heater carry out the temperature of real-time detection Degree detection means, described hexahedro heater include auxiliary heater, be located at polycrystalline silicon ingot or purifying furnace (9) in crucible (1) above Top heater (2) and four four side-wall outer side being laid in crucible (1) respectively side heater (4), described auxiliary Heater is the bottom heater (3) being laid in below crucible (1);Described temperature-detecting device is included to top heater (2) Heating-up temperature carry out the top firing temperature detecting unit (10) of real-time detection, the heating-up temperature of counter-lateral quadrents heater (4) is entered Sidepiece heating-up temperature detector unit (11) of row real-time detection and real-time detection is carried out to the heating-up temperature of bottom heater (3) Bottom-heated temperature detecting unit (12), described top firing temperature detecting unit (10), sidepiece heating-up temperature detector unit (11) all it is connected with main controller (8) with bottom-heated temperature detecting unit (12);It is provided with guarantor in described polycrystalline silicon ingot or purifying furnace (9) Warm cylinder (13), described hexahedro heater is located in heat-preservation cylinder (13);For cube crucible and it is in horizontal cloth to described crucible (1) If, all in horizontal layout, four described side heater (4) are all in vertically for described top heater (2) and bottom heater (3) To laying.
2. according to described in claim 1 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: described bottom Portion's heater (3) is fixed on the ds block (5) being supported in crucible (1) bottom, described bottom heater (3) top and ds block (5) The distance between bottom is 0.5cm~3cm.
3. according to the polycrystalline silicon ingot casting heating system based on auxiliary heating described in claim 1 or 2 it is characterised in that: also Adjust respectively including to the heating power of top heater (2), bottom heater (3) and four described side heater (4) The heating power adjusting means (6) of section, described top heater (2), bottom heater (3) and four described side heater (4) all it is connected with heating power adjusting means (6);Described heating power adjusting means (6) is connected with main controller (8).
4. according to described in claim 3 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: described top Portion's heater (2) is connected with top firing power supply (2-1) by first electrode, and four described side heater (4) are all by Two electrodes are connected with sidepiece heating power supply (4-1), and described bottom heater (3) passes through the 3rd electrode and bottom-heated power supply (3- 1) connect;Described top firing power supply (2-1), sidepiece heating power supply (4-1) and bottom-heated power supply (3-1) are all and heating power Adjusting means (6) connects, and described heating power adjusting means (6) is to top firing power supply (2-1), sidepiece heating power supply (4- 1) and bottom-heated power supply (3-1) the PCU Power Conditioning Unit that is adjusted respectively of output.
5. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute State the underface that bottom heater (3) is located at crucible (1).
6. according to the polycrystalline silicon ingot casting heating system based on auxiliary heating described in claim 1 or 2 it is characterised in that: also Including the parameter set unit (16) being connected with main controller (8) respectively and display unit (15).
7. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute Four side-wall outer side stating crucible (1) are provided with crucible guard boards (7), and described side heater (4) is located at crucible guard boards (7) outward Side;Described crucible guard boards (7) are in vertically to the graphite cake laid.
8. according to described in claim 1 or 2 based on auxiliary heating polycrystalline silicon ingot casting heating system it is characterised in that: institute State top heater (2), side heater (4) and bottom heater (3) and be resistance heater.
CN201620909627.3U 2016-08-19 2016-08-19 Polycrystalline silicon is heating system for ingot casting based on boosting Expired - Fee Related CN205907393U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620909627.3U CN205907393U (en) 2016-08-19 2016-08-19 Polycrystalline silicon is heating system for ingot casting based on boosting

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Application Number Priority Date Filing Date Title
CN201620909627.3U CN205907393U (en) 2016-08-19 2016-08-19 Polycrystalline silicon is heating system for ingot casting based on boosting

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959917A (en) * 2022-07-08 2022-08-30 安徽冠宇光电科技有限公司 Solar polycrystalline silicon ingot furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959917A (en) * 2022-07-08 2022-08-30 安徽冠宇光电科技有限公司 Solar polycrystalline silicon ingot furnace

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