CN208151524U - It is layered snakelike polycrystalline silicon ingot casting graphite side heater - Google Patents
It is layered snakelike polycrystalline silicon ingot casting graphite side heater Download PDFInfo
- Publication number
- CN208151524U CN208151524U CN201820498723.2U CN201820498723U CN208151524U CN 208151524 U CN208151524 U CN 208151524U CN 201820498723 U CN201820498723 U CN 201820498723U CN 208151524 U CN208151524 U CN 208151524U
- Authority
- CN
- China
- Prior art keywords
- side heater
- heater
- snakelike
- layer side
- upper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a kind of layering snakelike polycrystalline silicon ingot casting graphite side heaters, it is related to photovoltaic apparatus ingot casting technology field, including 8 side heater monomers, 3 booms, 3 electrodes and 4 pieces of angle connecting plates, side heater monomer is snakelike and presses every layer of 4 composition upper layer side heater and lower layer side heater, boom middle and lower sections and upper layer side heater, the connection of lower layer side heater, so that upper layer side heater and lower layer side heater are connected in parallel, side heater is divided into impartial three-phase by boom, electrode is connected to boom top, angle connecting plate connects upper layer side heater monomer and lower layer side heater monomer and connects the side heater monomer that left and right is adjacent in same layer.Side heater is designed as upper layer and lower layer parallel-connection structure by the utility model, can effectively reduce the resistance of side heater, improves the peak power of side heater；G8 and larger size ingot furnace are balanced to the double requirements of graphite side heater power and thickness.
Description
Technical field
The utility model relates to photovoltaic apparatus ingot casting technology fields, more particularly to a kind of snakelike polycrystalline silicon ingot or purifying furnace of layering
Graphite side heater.
Background technique
Solar energy power generating is emerging one of renewable energy utilization form, and in recent years, solar photovoltaic industry exists
Rapid development is achieved both at home and abroad.In photovoltaic industry, using most often crystal silicon solar energy battery, including monocrystalline
The advantages that silicon silicon wafer and polysilicon silicon wafer, polysilicon chip is high, at low cost with its production capacity, occupies the leading of solar photovoltaic industry
Status.
Polycrystalline silicon ingot or purifying furnace is the capital equipment for producing solar-grade polysilicon ingot, and traditional ingot furnace heater uses resistance
Heating, heating source is the three-phase alternating-current supply of 50Hz, when heater is run, in addition to generating Joule heat and providing heat source for ingot furnace,
Electromagnetic field can be also generated simultaneously, and penetration by electromagnetic fields melts silicon face, and generates Lorentz force on its surface, influences melt silicon convection current.
Therefore, core component of the heater as polysilicon ingot furnace thermal field not only determines thermal field distribution in furnace, but also to silicon melt pair
Stream and impurity transmission etc. play a crucial role.In the prior art, polycrystalline silicon ingot or purifying furnace heater mostly uses greatly big week
Phase snakelike graphite heater, triangular in shape to be attached around in crucible guard boards surrounding, heater electromagnetic field is in molten silicon face penetrated bed
The interior Lorentz force generated with heater shape periodically up and down seriously affects melt convection and long brilliant solid liquid interface
Stability.
In addition, the ingot furnaces such as G7, G8 gradually occur and put into production with the continuous upgrading of polycrystalline silicon ingot or purifying furnace, feed intake
Amount and silicon ingot size greatly increase, this increases the side heater length for being surrounded on crucible guard boards surrounding, required heater peak
Value power is consequently increased.Meanwhile the compact thermal field space requirement heater thickness of ingot furnace should not be too large, thicker graphite adds
Hot device occupies more thermal field space, not only limits silicon ingot size, and due to the presence of human error, and whens loading and unloading easily causes
It is collided between backplate heater, shortens heater service life.Therefore, increased simultaneously in side heater length and peak power
Under the conditions of, mono-layer graphite side heater, which is difficult to meet the large scales such as G7, G8 ingot furnace, wants the bilayer of heater thickness and power
It asks.
Utility model content
In view of the above technical problems, the shortcomings that overcoming the prior art, provides a kind of snakelike polysilicon of layering to the utility model
Ingot furnace graphite side heater, balances G8 and larger size ingot furnace wants graphite side heater power and the dual of thickness
It asks.
In order to solve the above technical problems, the utility model provides a kind of snakelike polycrystalline silicon ingot casting graphite side heating of layering
Device, including 8 side heater monomers, 3 booms, 3 electrodes and 4 pieces of angle connecting plates, side heater monomer are snakelike and by every
4 composition upper layer side heater of layer and lower layer side heater, boom middle and lower sections and upper layer side heater, lower layer side heater connect
It connects, so that upper layer side heater and lower layer side heater are connected in parallel, side heater is divided into impartial three-phase by boom, and electrode connects
It is connected to boom top, angle connecting plate connects left and right in upper layer side heater monomer and lower layer side heater monomer and connection same layer
Adjacent side heater monomer.
Technical effect：Side heater is designed as upper layer and lower layer parallel-connection structure by the utility model, can effectively reduce side heating
The resistance of device improves the peak power of side heater；G8 and larger size ingot furnace are balanced to graphite side heater power
With the double requirements of thickness.
The technical solution that the utility model further limits is：
Further, upper layer side heater height L1 > 20mm, lower layer side heater height L2 > 20mm.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, boom are located at the height above upper layer side heater
Spend D1 > 20mm, height D2 > 0mm of the boom between upper layer side heater and lower layer side heater.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, side heater monomer includes several snakelike weeks
Phase, there is gas gap between the adjacent snakelike period, the width of gas gap is 5~50mm.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, boom is L-shaped and its long-armed middle and lower sections with it is upper
Layer side heater, the connection of lower layer side heater.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, angle connecting plate in hollow and including left part,
Middle part and right part, left part, right part and middle part connect in obtuse angle, so that left part and right part distinguish sides adjacent heater monomer to the left and right
Bending, the quadrangle of angle connecting plate is connect with 4 sides adjacent heater monomers respectively.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, side heater monomer and electrode are all made of graphite
Material is made.
The preceding snakelike polycrystalline silicon ingot casting graphite side heater of layering, side heater monomer, boom, electrode and angle connect
Nut-screw form is all made of between fishplate bar to be detachably connected.
The utility model has the beneficial effects that：
（1）Heater every phase in side contains identical heating cycle in the utility model, ensure that heating uniformity；Meanwhile
Upper layer side heater and lower layer side heater include the close snakelike period, can effectively offset the snakelike heater melt of large period
The magnetic field force of the periodicity that silicon face generates upward or downward, is effectively improved molten silicon convection current, improves the flatness of solid liquid interface；
（2）Boom is L-shaped in the utility model, long-armed to be not only connected to upper layer side heater, but also is connected to lower layer side heating
Device, realizes the parallel connection of upper layer and lower layer side heater, and electric current draws from the top of the lower part of upper layer side heater, lower layer side heater
Enter, guarantees the up-down symmetry of electric current in two layers of side heater, enhance thermal field uniformity；
（3）Angle connecting plate is in hollow in the utility model, and every piece of angle connecting plate had both been connected to left and right two panels in same layer
Side heater monomer, ensure that current lead-through between single layer, and be connected to upper layer and lower layer side heater, and it is strong to increase corner connection
Degree prevents side heater texturing, improves side heater service life；Meanwhile the structure of angle connecting plate increases the electricity of its own
Resistance ensure that the fever of side heater corner is uniform；
（4）Side heater thickness reduces in the utility model, is effectively saved thermal field space, increases crucible guard boards and side
The distance between heater, the collision of backplate and heater when reducing loading and unloading improve thermal field stability and heater
Service life；
（5）The resistance of every layer of side heater is adjusted in the utility model, thus the hair of controllable upper layer and lower layer side heater
Thermal power effectively controls temperature of thermal field gradient.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is boom structure schematic diagram in the utility model；
Wherein：1, side heater monomer；2, boom；3, electrode；4, angle connecting plate.
Specific embodiment
A kind of layering provided in this embodiment snakelike polycrystalline silicon ingot casting graphite side heater, structure is as shown in Figs. 1-2, packet
The boom 2,3 of 8 side heater monomers 1,3 electrode 3 and 4 piece angle connecting plate 4 is included, side heater monomer 1 and electrode 3 are all made of
Graphite material is made, and nut-screw form is all made of between each components and is detachably connected.
Side heater monomer 1 includes several snakelike periods, has gas gap, the width of gas gap between the adjacent snakelike period
Degree is 5~50mm.By every layer of 4 composition upper layer side heater and lower layer side heater, upper layer side heater height L1 > 20mm,
Lower layer side heater height L2 > 20mm.
Boom 2 is L-shaped and its long-armed middle and lower sections is connect with upper layer side heater, lower layer side heater, so that upper layer side adds
Hot device and lower layer side heater are connected in parallel, and boom 2 is located at the height D1 > 20mm above upper layer side heater, and boom 2 is located at
Height D2 > 0mm between upper layer side heater and lower layer side heater.Side heater is divided into impartial three-phase, electricity by boom 2
Pole 3 is connected to 2 top of boom, and angle connecting plate 4 connects upper layer side heater monomer 1 and lower layer side heater monomer 1 and connection is same
The adjacent side heater monomer 1 in left and right in one layer.
In hollow and including left part, middle part and right part, left part, right part and middle part connect angle connecting plate 4 in obtuse angle, so that
Sides adjacent heater monomer 1 is bent to the left and right respectively for left part and right part, and the quadrangle of angle connecting plate 4 is heated with 4 sides adjacents respectively
Device monomer 1 connects.
Heater every phase in side contains identical heating cycle in the utility model, ensure that heating uniformity；Meanwhile upper layer
Side heater and lower layer side heater include the close snakelike period, can effectively offset the snakelike heater melt silicon table of large period
The magnetic field force of the periodicity that face generates upward or downward, is effectively improved molten silicon convection current, improves the flatness of solid liquid interface；
Boom 2 is L-shaped, long-armed to be not only connected to upper layer side heater, but also is connected to lower layer side heater, realizes upper and lower two
The parallel connection of layer side heater, electric current guarantee that two layers of side adds from the lower part of upper layer side heater, the top introducing of lower layer side heater
The up-down symmetry of electric current in hot device, enhances thermal field uniformity.
Angle connecting plate 4 is in hollow, and every piece of angle connecting plate 4 had both been connected to left and right two panels side heater monomer 1 in same layer,
It ensure that current lead-through between single layer, and be connected to upper layer and lower layer side heater, increase corner bonding strength, prevent side heater
Deformation improves side heater service life；Meanwhile the structure of angle connecting plate 4 increases the resistance of its own, ensure that side is heated
The fever of device corner is uniform.
Side heater thickness reduce, be effectively saved thermal field space, increase between crucible guard boards and side heater away from
From the collision of backplate and heater when reducing loading and unloading improves the service life of thermal field stability and heater.
Side heater is designed as upper layer and lower layer parallel-connection structure by the utility model, can effectively reduce the resistance of side heater,
Improve the peak power of side heater；G8 and larger size ingot furnace are balanced to pair of graphite side heater power and thickness
It is important to ask.The resistance of every layer of side heater is adjusted, thus the heating power of controllable upper layer and lower layer side heater, effectively control heat
Field temperature gradient.
In addition to the implementation, the utility model can also have other embodiments；It is all to use equivalent replacement or equivalent change
The technical solution to be formed is changed, the protection scope of the requires of the utility model is all fallen within.
Claims (8)
1. a kind of layering snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：Including 8 side heater monomers（1）,
3 booms（2）, 3 electrodes（3）With 4 pieces of angle connecting plates（4）, the side heater monomer（1）For it is snakelike and press every layer of 4 structure
At upper layer side heater and lower layer side heater, the boom（2）Middle and lower sections add with the upper layer side heater, the lower layer side
Hot device connection, so that the upper layer side heater and the lower layer side heater are connected in parallel, the boom（2）By side heater
It is divided into impartial three-phase, the electrode（3）It is connected to the boom（2）Top, the angle connecting plate（4）Connect side described in upper layer
Heater monomer（1）With heater monomer in side described in lower layer（1）And connect the side heater list that left and right is adjacent in same layer
Body（1）.
2. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The upper layer
Side heater height L1 > 20mm, the lower layer side heater height L2 > 20mm.
3. a kind of layering according to claim 2 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：It is described
Boom（2）Height D1 > 20mm above the upper layer side heater, the boom（2）Positioned at the upper layer side heater
Height D2 > 0mm between the lower layer side heater.
4. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The side adds
Hot device monomer（1）Including several snakelike periods, there is gas gap, the width of the gas gap between the adjacent snakelike period
Degree is 5~50mm.
5. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The boom
（2）L-shaped and its long-armed middle and lower sections are connect with the upper layer side heater, the lower layer side heater.
6. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The angle connects
Fishplate bar（4）In hollow and including left part, middle part and right part, the left part, the right part connect in obtuse angle with the middle part, make
Obtain the left part and the right part side heater monomer adjacent to the left and right respectively（1）Bending, the angle connecting plate（4）Four
Angle respectively with 4 adjacent side heater monomers（1）Connection.
7. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The side adds
Hot device monomer（1）With the electrode（3）Graphite material is all made of to be made.
8. layering according to claim 1 snakelike polycrystalline silicon ingot casting graphite side heater, it is characterised in that：The side adds
Hot device monomer（1）, the boom（2）, the electrode（3）With the angle connecting plate（4）Between be all made of nut-screw form into
Row is detachably connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820498723.2U CN208151524U (en) | 2018-04-10 | 2018-04-10 | It is layered snakelike polycrystalline silicon ingot casting graphite side heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820498723.2U CN208151524U (en) | 2018-04-10 | 2018-04-10 | It is layered snakelike polycrystalline silicon ingot casting graphite side heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208151524U true CN208151524U (en) | 2018-11-27 |
Family
ID=64381159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820498723.2U Active CN208151524U (en) | 2018-04-10 | 2018-04-10 | It is layered snakelike polycrystalline silicon ingot casting graphite side heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208151524U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
-
2018
- 2018-04-10 CN CN201820498723.2U patent/CN208151524U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101775642A (en) | Combined resistance heater and energy-saving heat field design for polycrystalline silicon ingot or purifying furnace | |
| CN106082189B (en) | The method producing graphitized material using silicon carbide furnace transformator and resistance furnace | |
| CN107523867A (en) | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace | |
| CN202576194U (en) | Electric melting kiln heating device for melting borosilicate glass | |
| CN208151524U (en) | It is layered snakelike polycrystalline silicon ingot casting graphite side heater | |
| CN108221048A (en) | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater | |
| CN106087053A (en) | A kind of polycrystalline silicon ingot casting method | |
| CN107655333B (en) | Composite heating type heat treatment furnace | |
| CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
| CN206580913U (en) | A kind of polycrystalline silicon ingot or purifying furnace heater | |
| CN106087044A (en) | A kind of polycrystalline silicon ingot casting melt method based on auxiliary heating | |
| CN208201171U (en) | Polycrystalline silicon ingot or purifying furnace top side heater | |
| CN103696002B (en) | The ingot furnace thermal field structure of electromagnetism and resistance Hybrid Heating and using method | |
| CN203768431U (en) | Electroslag remelting furnace | |
| CN208151522U (en) | Close period polycrystalline silicon ingot casting furnace side heater | |
| CN106283182B (en) | A kind of polycrystalline silicon casting ingot process | |
| CN202063819U (en) | Electric melting furnace for special glass | |
| CN205556443U (en) | Platinum passageway and glass manufacture equipment | |
| CN108330537B (en) | Side heater of dense-period polycrystalline silicon ingot furnace | |
| CN215365450U (en) | Basalt fiber vertical heating furnace | |
| CN202755095U (en) | Novel single crystal furnace thermal field and novel single crystal furnace thermal field of drawing slight-mixing silicon single crystal bar | |
| CN208219008U (en) | Single crystal furnace heater | |
| CN207811929U (en) | A kind of side heater assembly and its lifting panel assembly applied to polycrystalline cast ingot | |
| CN106222740A (en) | A kind of polycrystalline silicon ingot casting method reducing oxygen content bottom polycrystalline silicon ingot casting | |
| CN2910921Y (en) | Super miniature glass electrical melting furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |