CN208201171U - Polycrystalline silicon ingot or purifying furnace top side heater - Google Patents
Polycrystalline silicon ingot or purifying furnace top side heater Download PDFInfo
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- CN208201171U CN208201171U CN201820370182.5U CN201820370182U CN208201171U CN 208201171 U CN208201171 U CN 208201171U CN 201820370182 U CN201820370182 U CN 201820370182U CN 208201171 U CN208201171 U CN 208201171U
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Abstract
The utility model discloses a kind of polycrystalline silicon ingot or purifying furnace top side heaters, it is related to photovoltaic apparatus ingot casting technology field, including heater top and side heater, side heater includes four snakelike side heater monomers, side heater monomer is made of several U-shaped minor comonomers and its periodicity is greater than 4, gap between minor comonomer center and adjacent minor comonomer is gas gap, and the width of gas gap is less than the width at minor comonomer single vertical position, and is less than 80mm；The quadrangle of side heater is respectively equipped with U-shaped angle connecting plate；It further include unidirectional boom and three-dimensional boom, side heater is divided into six phases jointly with three-phase boom by unidirectional boom.The utility model ensure that thermal field is uniform, improve Ingot quality.
Description
Technical field
The utility model relates to photovoltaic apparatus ingot casting technology fields, heat more particularly to a kind of polycrystalline silicon ingot or purifying furnace top side
Device.
Background technique
In photovoltaic industry, polysilicon high, advantage at low cost with its production capacity occupies photovoltaic industry predominantly
Position.Ingot furnace is the key equipment of solar-grade polysilicon ingot production.The uniformity of ingot furnace thermal field, stability are to polycrystal silicon ingot
Quality plays a crucial role.
The core component of polysilicon ingot furnace thermal field is heater, currently, the heater of the polycrystalline silicon ingot or purifying furnace of mainstream
Power supply supply is 50Hz, the three-phase alternating current of 25V.Therefore, when heater is run, Joule heat can be not only generated, is ingot furnace
Heat source is provided, while can also generate alternating electromagnetic field.Under alternating electromagnetism field action, Lorentz force, shadow can be generated in silicon melt
The convection current for ringing silicon melt, causes silicon melt thermal field uneven, and long crystalline substance solid liquid interface is unstable.
As shown in Figure 1, 2, in the prior art, the side heater that ingot furnace uses is mostly that the large period of triangle connection is snakelike
Heater.The snakelike period of such heater can generate Lorentz force periodically upwardly or downwardly in silicon melt side surface,
Lead to convective instability in silicon melt, influence solid-liquid interface shape, to influence Ingot quality.Meanwhile side heater is three-phase
Boom connects, and it is uneven to easily lead to thermal field for the heat generated at boom.In addition, the comer gusset panels of side heater are that nothing adds
The bending structure of heat cycle, resistance is smaller, and corner fever is few, also easily causes thermal field uneven.
Utility model content
The utility model in view of the above technical problems, the shortcomings that overcoming the prior art, provides a kind of polycrystalline silicon ingot casting furnace roof
Side heater guarantees that thermal field is uniform, improves Ingot quality.
In order to solve the above technical problems, the utility model provides a kind of polycrystalline silicon ingot or purifying furnace top side heater, including top
Heater and the side heater below heater top, side heater include that four head and the tail connect rectangular snakelike side heating
Device monomer, every side heater monomer is made of several U-shaped minor comonomers and its periodicity is greater than traditional ingot casting furnace side heater
Periodicity is greater than 4, and the gap between minor comonomer center and adjacent minor comonomer is gas gap, and the width of gas gap is less than small
The width at monomer single vertical position, and the gas gap width for being less than traditional side heater is less than 80mm；
The quadrangle of side heater is respectively equipped with U-shaped angle connecting plate, and the top of angle connecting plate is separately connected adjacent two panels side and adds
The top of hot device monomer；
Further include unidirectional boom and three-dimensional boom, is connected separately with electrode, heater top on unidirectional boom and three-dimensional boom
It is in parallel with side heater；Side heater is simultaneously divided into three-phase, three-dimensional boom by the end connecting side heater monomer of unidirectional boom
End connecting side heater monomer and side heater is divided into three-phase, unidirectional boom and three-dimensional boom are jointly by side heater
It is divided into six phases.
Technical effect: the side heater of the utility model by four close periods snakelike side heater monomer and four U
Type angle connecting plate joins end to end composition, close snakelike cycle offset penetrate to several centimetres of molten silicon side surface periodically upwards
With downward Lorentz force, melt convection is improved, improves the stability and flatness of long brilliant solid liquid interface；Side heater by
Unidirectional boom and three-dimensional boom are divided into six phases, and every phase includes the identical period, ensure that every phase calorific value is of substantially equal, thermal field is equal
It is even；U-shaped angle connecting plate contains the snakelike period an of minor comonomer, compensates for the hair of corner caused by the connecting plate of traditional bendable angle
It is hot uneven.
The technical solution that the utility model further limits is:
Further, heater top is symmetrical and is located in the same horizontal plane including three pieces and the adjacent top of head and the tail adds
Hot device monomer, every heater top monomer are a phase, and the top heating area of the every phase covering of heater top is equal.
The preceding polycrystalline silicon ingot or purifying furnace top side heater, three-dimensional boom include three connecting pins, and cross sectional shape is straight
Angular, the both ends of horizontal position are separately connected adjacent two panels heater top monomer, the end connecting side heating at vertical position
Device.
The preceding polycrystalline silicon ingot or purifying furnace top side heater, side heater monomer, electrode, are unidirectionally hung heater top monomer
It is all made of screw rod between arm, three-dimensional boom and angle connecting plate and nut carries out detachable connection.
The preceding polycrystalline silicon ingot or purifying furnace top side heater, the width of gas gap are 10-40mm.
The beneficial effects of the utility model are:
(1) for heater top by the snakelike heater top monomer composition of three pieces, every phase only includes that a top adds in the utility model
Hot device monomer does not need connection sheet connection installation, reduces installation complexity, while also reducing electricity caused by connection installation
Error is hindered, ensure that the equilibrium of three-phase resistance, improves the uniformity that top generates heat；The top heating area phase of every phase covering
Deng ensure that fever is uniform；
(2) three-dimensional boom realizes heater top and side is heated in the case where not increasing number of electrodes in the utility model
Device is in parallel；
(3) side heater is increased side heater intensity, is improved heating using six boom connections in the utility model
Device service life；
(4) six booms are evenly distributed on heater surrounding in the utility model, improve traditional three boom of side heater
Thermal field caused by connection is uneven；
(5) side heater also can be other intensive periodic structures or plate for intensive serpentine configuration in the utility model
Structure, the utility model can cooperate with the bottom heater of arbitrary shape, any connection, be used for any type of furnace ingot furnace.
Detailed description of the invention
Fig. 1 is traditional large period side heater structure schematic diagram in background technique；
Fig. 2 is that traditional large period side heater melts the silicon side surface direction y Lorentz force in background technique；
Fig. 3 is the structural schematic diagram of the present embodiment；
Fig. 4 is the equivalent circuit diagram of the utility model；
Wherein: 1, side heater monomer；2, heater top monomer；3, gas gap；4, angle connecting plate；5, unidirectional boom；
6, three-dimensional boom；7, the snakelike side heater of large period.
Specific embodiment
A kind of polycrystalline silicon ingot or purifying furnace top side heater provided in this embodiment, structure as shown in figure 3, include heater top and
Side heater below heater top, side heater include that four head and the tail connect rectangular snakelike side heater monomer 1,
Every side heater monomer 1 is made of several U-shaped minor comonomers and its periodicity is greater than the periodicity of traditional ingot casting furnace side heater
It is greater than 4, the gap between minor comonomer center and adjacent minor comonomer is gas gap 3, and the width of gas gap 3 is less than minor comonomer
The width at single vertical position.The width of gas gap is 10-40mm, less than the gas gap width of traditional side heater, that is, small
In 80mm.
The quadrangle of side heater is respectively equipped with U-shaped angle connecting plate 4, and the top of angle connecting plate 4 is separately connected adjacent two panels side
The top of heater monomer 1.
Further include unidirectional boom 5 and three-dimensional boom 6, electrode is connected separately on unidirectional boom 5 and three-dimensional boom 6, top adds
Hot device is in parallel with side heater.Three-dimensional boom 6 include three connecting pins, cross sectional shape be square, the two of horizontal position
End is separately connected adjacent two panels heater top monomer 2, the end connecting side heater at vertical position.The end of unidirectional boom 5
Side heater is simultaneously divided into three-phase by connecting side heater monomer 1, and the end connecting side heater monomer 1 of three-dimensional boom 6 simultaneously will
Side heater is divided into three-phase, and side heater is divided into six phases jointly with three-dimensional boom 6 by unidirectional boom 5.
Heater top is symmetrical and is located in the same horizontal plane including three pieces and the adjacent heater top monomer of head and the tail
2, every heater top monomer 2 is a phase, and the top heating area of the every phase covering of heater top is equal.
Between side heater monomer 1, heater top monomer 2, electrode, unidirectional boom 5, three-dimensional boom 6 and angle connecting plate 4
Detachable connection is carried out using screw rod and nut.
Close snakelike cycle offset is penetrated to several centimetres of molten silicon face of periodicity Lorentz force up and down,
Melt convection is improved, the stability and flatness of long brilliant solid liquid interface are improved；Every stringent phase addition heat cycle of side heater
Deng ensure that thermal field is uniform；Side heater is evenly distributed on heater surrounding, is improved using six boom connections, six booms
Thermal field caused by traditional side heater three boom connection is asymmetric；Side heater intensity is increased, heater use is improved
Service life；The every phase of heater top includes a heater top monomer 2, reduces the resistance error of every phase, so that top fever is more
Uniformly；The complicated loop of heater top and side heater composition, so that electromagnetic field is cancelled out each other, Lorentz force is intracorporal to molten silicon
Convection current influences to reduce, and solid liquid interface is more flat；U-shaped angle connecting plate 4 includes a snakelike period, ensure that quadrangle fever is equal
It is even.
Heater top and side heater shape are variable in the utility model, as long as heater top and side heater composition are as schemed
Parallel-connection structure circuit shown in 4, heater power source are supplied as 50Hz, the three-phase alternating current of 25V.
Every side heater monomer 1 includes 8 periods, and angle connecting plate 4 includes 1 period, in totally 36 period, is divided into 6 phases, often
6 period of phase.Gas gap 25m or so.Such side heater structure ensures that every phase cycle is strictly equal, and heater fever is uniform.
This is the optimal period number for guaranteeing every side heater monomer 1 and the equilibrium of every phase cycle and resistance balance, considers original ingot furnace
Electrode hole location and resistance balance, every and every phase cycle can also be unequal.
In addition to the implementation, the utility model can also have other embodiments；It is all to use equivalent replacement or equivalent change
The technical solution to be formed is changed, the protection scope of the requires of the utility model is all fallen within.
Claims (5)
1. a kind of polycrystalline silicon ingot or purifying furnace top side heater, the side heating including heater top and below the heater top
Device, it is characterised in that: the side heater includes that four head and the tail connect rectangular snakelike side heater monomer (1), every institute
State that side heater monomer (1) is made of several U-shaped minor comonomers and its periodicity is greater than the periodicity of traditional ingot casting furnace side heater
It is greater than 4, the gap between the minor comonomer center and the adjacent minor comonomer is gas gap (3), the gas gap (3)
Width be less than the width at minor comonomer single vertical position and be less than the gas gap width of traditional side heater and be less than
80mm；
The quadrangle of the side heater is respectively equipped with U-shaped angle connecting plate (4), and the top of the angle connecting plate (4) is separately connected phase
The top of side heater monomer (1) described in adjacent two panels；
Further include unidirectional boom (5) and three-dimensional boom (6), is separately connected on the unidirectional boom (5) and the three-dimensional boom (6)
There is electrode, the heater top is in parallel with the side heater；The end of the unidirectional boom (5) connects the side heater list
The side heater is simultaneously divided into three-phase by body (1), and the end of the three-dimensional boom (6) connects the side heater monomer (1)
And the side heater is divided into three-phase, the unidirectional boom (5) and the three-dimensional boom (6) are jointly by the side heater
It is divided into six phases.
2. polycrystalline silicon ingot or purifying furnace top side according to claim 1 heater, it is characterised in that: the heater top is in left and right
It is symmetrical and be located in the same horizontal plane including three pieces and heater top monomer (2) that head and the tail are adjacent, the every heater top list
Body (2) is a phase, and the top heating area of the every phase covering of heater top is equal.
3. polycrystalline silicon ingot or purifying furnace top side according to claim 2 heater, it is characterised in that: three-dimensional boom (6) packet
Three connecting pins are included, cross sectional shape is square, and the both ends of horizontal position are separately connected heater top described in adjacent two panels
The end of monomer (2), vertical position connects the side heater.
4. polycrystalline silicon ingot or purifying furnace top side according to claim 1 heater, it is characterised in that: the side heater monomer
(1), be all made of between heater top monomer (2), electrode, unidirectional boom (5), three-dimensional boom (6) and angle connecting plate (4) screw rod and
Nut carries out detachable connection.
5. polycrystalline silicon ingot or purifying furnace top side according to claim 1 heater, it is characterised in that: the gas gap (3)
Width is 10-40mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820370182.5U CN208201171U (en) | 2018-03-19 | 2018-03-19 | Polycrystalline silicon ingot or purifying furnace top side heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820370182.5U CN208201171U (en) | 2018-03-19 | 2018-03-19 | Polycrystalline silicon ingot or purifying furnace top side heater |
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| Publication Number | Publication Date |
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| CN208201171U true CN208201171U (en) | 2018-12-07 |
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| CN201820370182.5U Active CN208201171U (en) | 2018-03-19 | 2018-03-19 | Polycrystalline silicon ingot or purifying furnace top side heater |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193266A (en) * | 2018-03-19 | 2018-06-22 | 镇江环太硅科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace top side heater |
| WO2021227126A1 (en) * | 2020-05-09 | 2021-11-18 | 宁波恒普真空技术有限公司 | Heating body, and vacuum furnace with multi-region temperature control |
-
2018
- 2018-03-19 CN CN201820370182.5U patent/CN208201171U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193266A (en) * | 2018-03-19 | 2018-06-22 | 镇江环太硅科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace top side heater |
| WO2021227126A1 (en) * | 2020-05-09 | 2021-11-18 | 宁波恒普真空技术有限公司 | Heating body, and vacuum furnace with multi-region temperature control |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201216 Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |