CN107523864A - The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace - Google Patents
The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN107523864A CN107523864A CN201710893716.2A CN201710893716A CN107523864A CN 107523864 A CN107523864 A CN 107523864A CN 201710893716 A CN201710893716 A CN 201710893716A CN 107523864 A CN107523864 A CN 107523864A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 103
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 45
- 239000010439 graphite Substances 0.000 claims abstract description 45
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 230000001174 ascending effect Effects 0.000 claims abstract description 8
- 230000002459 sustained effect Effects 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052710 silicon Inorganic materials 0.000 abstract description 30
- 239000010703 silicon Substances 0.000 abstract description 30
- 239000013078 crystal Substances 0.000 description 37
- 239000007788 liquid Substances 0.000 description 22
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 11
- 230000009286 beneficial effect Effects 0.000 description 9
- 238000009434 installation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The present invention discloses a kind of combination heater of polycrystalline silicon ingot or purifying furnace, including support, top heater, side heater and graphite electrode component；Side heater includes the multiple sidepiece heating modules being arranged in side face, and each side of support sets a sidepiece heating module, and each sidepiece heating module is combined by multiple heat-generating units；Heat-generating units in each sidepiece heating module are divided into some groups of heating components from top to bottom；The total resistance value of heating component of the sidepiece heating module on sustained height is identical, and the total resistance value of each heating component in same sidepiece heating module is in ascending distribution from top to bottom.The combination heater can in the vertical direction form stable thermograde, and the control of the thermograde is more convenient and accurate.Invention additionally discloses a kind of polycrystalline silicon ingot or purifying furnace, the polycrystalline silicon ingot or purifying furnace obtains preferable temperature distribution gradients in the presence of combination heater, so as to obtain the silicon ingot of higher quality.
Description
Technical field
The present invention relates to a kind of polysilicon ingot casting equipment, and in particular to a kind of combination heater of polycrystalline silicon ingot or purifying furnace and
Polycrystalline silicon ingot or purifying furnace comprising the heater.
Background technology
At present, solar cell (group) is mostly polysilicon solar cell, wherein, crystalline silicon material is most important photovoltaic
Material, and crystalline silicon material is also still the mainstay material of solar cell in the quite a long time from now on.Generally
In the case of, the equipment for manufacturing more silicon wafers is ingot furnace, and existing polycrystalline silicon ingot or purifying furnace mainly by body of heater, heat-insulation cage, crucible, plus
The structures such as hot device and heat exchange platform are formed.
The operation principle of existing polycrystalline silicon ingot or purifying furnace is：After silicon materials are heated to molten condition, by heat-insulation cage from it is lower to
Upper opening, because crucible is arranged on heat exchange platform, therefore the bottom of crucible cools down first, and silicon liquid forms nucleus simultaneously at the position
Start long crystalline substance, because heat-insulation cage moves from bottom to top, in the vertical direction forms bottom low temperature, the Temperature Distribution of upper pyrometer,
So that long crystal boundary face (thermoisopleth) gradually moves up from lower, crystal is allowed to grow from bottom to top.It is well known that long chip to crystalline substance
The quality of body is closely bound up, if wanting to manufacture high-purity polycrystalline silicon, it is important to ensure vertical direction thermograde and radially long crystalline substance
Interface levelness, that is, allow crystal vertically to be grown up under.
In existing polycrystalline silicon ingot or purifying furnace, heater generally includes top heater and lateral heater, each in order to allow
Position thermally equivalent, heating amount of the heater in its thermal radiation range is uniform, such as application publication number is
" graphite heater and polycrystalline silicon ingot or purifying furnace of polycrystalline silicon ingot or purifying furnace " disclosed in CN106757338A application for a patent for invention text, is awarded
Weigh " polycrystalline silicon ingot or purifying furnace " etc., the silicon liquid of this polycrystalline silicon ingot or purifying furnace disclosed in the patent of invention that notification number is CN103541003B
Before crystallization, lateral temperature is uniform, it is long it is brilliant during, it is necessary to it is reasonable to be carried out by the speed lifted to heat-insulation cage
Control, the thermograde of preferable vertical direction could be obtained, allow long crystal boundary face flatly to grow from bottom to top, but heat-insulated
It is difficult to accurately coordinate between the opening process of cage and the brilliant process of optimal length, there can be following deficiency in actual production：
1st, the translational speed of long crystal boundary upwardly is difficult to be precisely controlled, if the lifting speed of heat-insulation cage is excessively slow, may result in long crystal boundary
Movement upwardly is slow, and efficiency is low, and influences crystal quality, if the lifting speed of heat-insulation cage is too fast, under the silicon liquid ratio of top
The silicon liquid of side faster cools down, and cannot ensure that long crystal boundary face grows from bottom to top, have a strong impact on crystal quality；2nd, heat-insulation cage carries
Lifting speed is slower, influences production efficiency.
The content of the invention
Present invention aims to overcome that the deficiencies in the prior art, there is provided a kind of combination heater of polycrystalline silicon ingot or purifying furnace,
The heater enables to ingot furnace in the vertical direction to form stable thermograde, using natural vertically Temperature Distribution come
Promote crystal growth, improve the brilliant efficiency of length of more silicon wafers and the purity of crystal.
The purpose of the present invention is achieved through the following technical solutions：
A kind of combination heater of polycrystalline silicon ingot or purifying furnace, including support, be arranged on the top heater of cantilever tip, set
In the lateral side heater of support and graphite electrode component；Characterized in that, the side heater includes being arranged on branch
Multiple sidepiece heating modules on frame side, each side of support set a sidepiece heating module, and each sidepiece adds
Thermal modules are combined by multiple heat-generating units；Heat-generating units in each sidepiece heating module are divided into some groups and added from top to bottom
Hot component；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, same sidepiece heating module
In the total resistance value of each heating component be in ascending distribution from top to bottom.
The operation principle of the combination heater of above-mentioned polycrystalline silicon ingot or purifying furnace is：
The resistance value of heat-generating units, size, shape can make different specifications in the present invention, form heat-generating units storehouse and treat
From；Because the total resistance value of each heating component in same sidepiece heating module is in ascending distribution from top to bottom, and
The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, therefore is melted being heated to silicon raw material
Afterwards, the temperature on the outside of silicon liquid is distributed in ascending rule from top to bottom, and the delivery position of two adjacent groups heating component
Place, by the heat exchange of local location, temperature is not in great-jump-forward change, and can form nature transition so that on the outside of silicon liquid
Temperature temperature uniformly rises from top to bottom；So in crystallization, heat-insulation cage can be disposably opened, allow on the outside of silicon liquid from
Under to upper there is identical radiating condition, because the temperature of bottom is low, rapid heat dissipation, silicon liquid is long brilliant since bottom, over time
Passage, crystallization temperature line gradually moves up so that long crystal boundary face moving vertically upward progressively, due to the temperature ring of silicon liquid surrounding
Border is consistent, therefore long crystal boundary face can remain horizontality, more so as to obtain the uniform high-quality grown vertically upward
Crystal silicon.
The preferred scheme of the present invention, wherein, the graphite electrode component includes first be connected with top heater
Graphite electrode group and the second graphite electrode group being connected with side heater；The first graphite electrode group and the second graphite electricity
Pole group is connected with the first three phase mains and the second three phase mains respectively.By three phase mains to top heater and side heater
Power supply so that the used time is shorter than dc source on conveying identical heating power, it is possible to increase efficiency, while can
Stable voltage is provided, ensures that heat-generating units being capable of consistent heat generation；Further, since top heater and side heater are connected to
On different three phase mains, by controlling the voltage ratio of two three phase mains, add so as to change top heater with sidepiece
The power ratio of hot device, so as to be more beneficial for obtaining the thermograde needed.
The preferred scheme of the present invention, wherein, when the heat-generating units in the heating component are multiple, these heatings
Unit is vertically or/and arranged radially.So can be using the total resistance value of every group of heating component as target, according to heating component
Vertical direction height and combine installing space, flexibly select the heat-generating units of appropriate resistance and size to be combined.
The preferred scheme of the present invention, wherein, the heat-generating units include the hair of snakelike heat-generating units and tabular
Hot cell.The heat-generating units of serpentine configuration are advantageous to save material, and are advantageous to radiate in follow-up radiation processes, can be with
By specially setting snakelike heat-generating units in diverse location, be advantageous to allow the position to accelerate radiating during subsequent thermal dissipation,
So as to be more beneficial for obtaining the Temperature Distribution needed；And the heat-generating units of tabular then radially and vertically can well with it is snakelike
Heat-generating units be combined collocation.
The preferred scheme of the present invention, wherein, the support includes four connecting plates, and each connecting plate includes pars intermedia
And it is connected between two connecting portions of portion both sides；Two connecting portions in each connecting plate add with two neighboring sidepiece respectively
One end connection of heat-generating units in thermal modules；All heat-generating units are connected to form rectangle frame by four connecting plates
Structure.The support form of this rectangular configuration is not only easy to the installation of heating unit to fix, and simplifies the structure of heating unit, and
It is also beneficial to ensure that each side of support has consistent heating condition and Temperature Distribution, is not in temperature in a circumferential direction
Spend the difference of distribution.
The present invention a preferred scheme, wherein, be equipped with each connecting portion it is multiple vertically arrange be used for and hair
The mounting hole of hot cell connection；The both ends of each heat-generating units are equipped with the fixing hole coordinated with the mounting hole；The heating
Unit is bolted on the connecting portion of connecting plate.This preferred scheme is advantageous in that the peace installation and dismantling for facilitating heat-generating units
Unload, and because mounting hole vertically arranges, so as to neatly regulation heating unit in the fixed position of vertical direction,
The fixation of the heat-generating units of different dimensions is adapted to, versatility is good, and the flexible combination of heat-generating units is better achieved.
The preferred scheme of the present invention, wherein, the top heater include five snakelike heat-generating units in top and
For by the snakelike heat-generating units in each top be connected together be fixedly connected with block.By setting the top of snakelike shape to heat
Device, material can be saved, be easy to processing and subsequent thermal dissipation；In addition, the snakelike heat-generating units in top are connected by being fixedly connected with block
It is fixed, be advantageous to the installation and removal of the snakelike heat-generating units in top.
The preferred scheme of the present invention, wherein, the first graphite electrode group includes three the first graphite electrodes, and
It is evenly provided on the snakelike heat-generating units in top；Three first graphite electrodes are by five snakelike heat-generating units in top
It is bisected into the equal top heating block of three resistance values；Three first graphite electrodes respectively U, V with the first three phase mains,
W phases are connected.This preferred scheme, which is advantageous in that, enables the snakelike heat-generating units in top of top heater to obtain identical electricity
Pressure, so as to obtain uniform thermal field in top heater.
The preferred scheme of the present invention, wherein, the second graphite electrode group has three, and by the side heater
On heating component be divided into resistance value identical three parts in a circumferential direction；It is electric with second graphite in heating component
Pole corresponding position be provided be used to connecting the second graphite electrode and heating component be conductively connected component, the connecting plate is by conductive material
It is made；The transverse slat for being conductively connected component and including the riser that is fixed in heating component and being arranged on riser upper end,
Second graphite electrode is arranged on transverse slat；Three second graphite electrodes U, V, W phase with the second three phase mains respectively
It is connected.By setting three electrodes, not only matched with three phase mains, and these three electrodes will heat group in a circumferential direction
Part is divided into resistance value identical three parts so that the caloric value at each position of circumferencial direction is uniform so that is obtained in heater
Uniform heat is obtained, the stable thermoisopleth moved up is obtained when being advantageous to crystallization.
The present invention also proposes a kind of polycrystalline silicon ingot or purifying furnace, including body of heater, heater, crucible and thermal insulation layer, and its feature exists
In the heater is a kind of above-mentioned combination heater of polycrystalline silicon ingot or purifying furnace.
The present invention has the advantages that compared with prior art：
1st, by from the spread configuration, or from bottom to top identical from resistance value of the heat-generating units with different resistance values
But the different heat-generating units of quantity spread configuration from bottom to top, it is possible to the heating component with different resistance values is obtained, so as to
In the vertical direction can form preferable thermograde after crystallisation by cooling is carried out to silicon liquid, and this thermograde is to crystal
There is power back-off so that the control of temperature is more convenient and accurate, so as to avoid excessively dependence control heat-insulated
The translational speed of cage realizes temperature control, and more efficient, the crystal quality of acquisition is more preferable.
2nd, the selection of heat-generating units is flexible and changeable, and not only the resistance value of heat-generating units can be arranged to different specifications, and
And shape, size can also be arranged to that different specifications is selective, and heat-generating units are also flexible in the installation site of vertical direction
It is changeable, it is more beneficial for obtaining preferable temperature distribution gradients, and then obtain the polycrystal of higher quality.
3rd, by increasing or decreasing the heat-generating units of certain resistance value in specific position, can obtain specific modality etc.
Warm line, to obtain the crystal of certain quality.For example, optimal long crystal boundary face is horizontality, but can not be kept away in silicon raw material
Some impurity of the presence exempted from, partial impurities can be removed after high-temperature heating melts in a manner of volatilization, but partial impurities are not
It can melt, be mingled in silicon liquid, these impurity are fixedly arranged at crystals during long crystalline substance, so as to influence the purity of crystal；For
These impurity are excluded, can allow the middle part in long crystal boundary face raised slightly upward, surrounding tilts down that (this middle part is slightly upward
Length brilliant speed of the raised long crystal boundary in face of long brilliant direction and each position will not cause materially affect), so in the brilliant mistake of length
Cheng Zhong, impurity will flow away on long crystal boundary face to surrounding, and these final impurity may build up the top layer or edge of silicon ingot
Part, can be easily to remove these impurity so in follow-up process；In order to obtain this middle part gently towards
Upper raised long crystal boundary face, it is desirable to which on the cross section of silicon liquid, middle temperature outline is less than the temperature of surrounding, in the present invention
In, can be by increasing in the heating component of bottom on the basis of the heat-generating units assembled scheme with horizontal long brilliant section
A heat-generating units are added, or from the heat-generating units that resistance value is bigger in the heating component of bottom, it is possible to
The starting stage of crystallization, allowing the temperature of silicon liquid bottom periphery, such silicon liquid is in the initial of crystallization than more slightly higher under normal circumstances
Stage, middle silicon liquid can be prior to the first crystallizations on periphery, so in the starting stage with regard to slightly upward raised long crystalline substance in the middle part of being formed
Interface, the brilliant process of follow-up length will keep this state to carry out, and be more beneficial for obtaining the higher crystal of purity.
Brief description of the drawings
Fig. 1 is a kind of dimensional structure diagram of the combination heater of polycrystalline silicon ingot or purifying furnace of the present invention.
Fig. 2 is the top view of the top heater and the first graphite electrode in Fig. 1.
Fig. 3 is the dimensional structure diagram of connecting plate in Fig. 1.
Fig. 4 is the dimensional structure diagram for being conductively connected component in Fig. 1.
Fig. 5 is the dimensional structure diagram of the snakelike heat-generating units in a kind of embodiment of the present invention.
Fig. 6 is the dimensional structure diagram of the large size heat-generating units in a kind of embodiment of the present invention.
Fig. 7 is the dimensional structure diagram of the small size heat-generating units in a kind of embodiment of the present invention.
Fig. 8 is that the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of the first combination of heat-generating units is shown
It is intended to.
Fig. 9 is that the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of second of combination of heat-generating units is shown
It is intended to.
Figure 10 is the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of the third combination of heat-generating units
Schematic diagram.
Figure 11 is the diagrammatic cross-section in the long crystal boundary face of the horizontality in polycrystalline silicon ingot or purifying furnace.
Figure 12 is long crystal boundary face and the diagrammatic cross-section of impurity discharge of the upward dimpling in middle part in polycrystalline silicon ingot or purifying furnace.
Embodiment
With reference to embodiment and accompanying drawing, the invention will be further described, but embodiments of the present invention are not limited only to
This.
Referring to Fig. 1-Fig. 4, a kind of combination heater of polycrystalline silicon ingot or purifying furnace of the present embodiment, including support, be arranged on
The top heater 5 of cantilever tip, it is located at support lateral side heater 2 and graphite electrode component；The sidepiece heating
Device 2 includes the multiple sidepiece heating modules being arranged in side face, and each side of support sets a sidepiece heating module,
Each sidepiece heating module is combined by multiple heat-generating units；Heat-generating units in each sidepiece heating module from it is lower to
On be divided into some groups of heating components；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, together
The total resistance value of each heating component in one sidepiece heating module is in ascending distribution from top to bottom.
Referring to Fig. 1, the graphite electrode component include 4 groups of the first graphite electrode being connected with top heater 5 and with
3 groups of the second graphite electrode that side heater 2 connects；3 groups of 4 groups of first graphite electrode and the second graphite electrode are respectively with
One three phase mains and the connection of the second three phase mains.Powered by three phase mains to top heater 5 and side heater 2 so that
The used time is shorter than dc source on conveying identical heating power, it is possible to increase efficiency, while stabilization can be provided
Voltage, ensure heat-generating units being capable of consistent heat generation；Further, since top heater 5 and side heater 2 be connected to it is different
On three phase mains, by controlling the voltage ratio of two three phase mains, so as to change top heater 5 and side heater 2
Power ratio, so as to be more beneficial for obtain need thermograde.
Referring to Fig. 1, when the heat-generating units in the heating component for it is multiple when, these heat-generating units are vertically or/and footpath
To arrangement.So can using the total resistance value of every group of heating component as target, according to heating component vertical direction height
And installing space is combined, flexibly select the heat-generating units of appropriate resistance and size to be combined.
Referring to Fig. 1, the heat-generating units include the heat-generating units of snakelike heat-generating units and tabular.The hair of serpentine configuration
Hot cell is advantageous to save material, and is advantageous to radiate in follow-up radiation processes, can by diverse location specially
Snakelike heat-generating units are set, are advantageous to allow the position to accelerate radiating during subsequent thermal dissipation, so as to be more beneficial for being needed
The Temperature Distribution wanted；And the heat-generating units of tabular then can be combined with snakelike heat-generating units well radially and vertically
Collocation.
Referring to Fig. 1 and Fig. 3, the support includes four connecting plates 1, and each connecting plate 1 includes pars intermedia 1-1 and connection
Two connecting portion 1-2 in pars intermedia 1-1 both sides；Two connecting portion 1-2 in each connecting plate 1 respectively with two neighboring sidepiece
One end connection of heat-generating units in heating module；All heat-generating units are connected to form square by four connecting plates 1
Shape mount structure.The support form of this rectangular configuration is not only easy to the installation of heating unit to fix, and simplifies the structure of heating unit,
And be also beneficial to ensure that each side of support has consistent heating condition and Temperature Distribution, it will not go out in a circumferential direction
The difference of existing Temperature Distribution.
Referring to Fig. 3, be equipped with each connecting portion 1-2 it is multiple vertically arrange for the installation that is connected with heat-generating units
Hole 1-21；The both ends of each heat-generating units are equipped with the fixing hole coordinated with the mounting hole 1-21；The heat-generating units pass through
It is bolted on the connecting portion 1-2 of connecting plate 1.So setting is advantageous in that the installation and removal for facilitating heat-generating units, and
And because mounting hole 1-21 is vertically arranged, so as to neatly regulation heating unit in the fixed position of vertical direction,
The fixation of the heat-generating units of different dimensions is adapted to, versatility is good, and the flexible combination of heat-generating units is better achieved.
Referring to Fig. 2, the top heater 5 includes five snakelike heat-generating units 5-1 in top and for will each top
Snakelike heat-generating units 5-1 be connected together be fixedly connected with block 5-2.By the top heater 5, Neng Goujie for setting snakelike shape
Material saving, it is easy to processing and subsequent thermal dissipation；It is in addition, by being fixedly connected with block 5-2 that the snakelike heat-generating units 5-1 connections in top is solid
It is fixed, be advantageous to the snakelike heat-generating units 5-1 in top installation and removal.
Referring to Fig. 1 and Fig. 2,4 groups of first graphite electrode includes three the first graphite electrodes 4, and equably sets
On the snakelike heat-generating units 5-1 in top；Three first graphite electrodes 4 put down five snakelike heat-generating units 5-1 in top
It is divided into the equal top heating block of three resistance values；Three first graphite electrodes 4 U, V, W with the first three phase mains respectively
It is connected.This preferred scheme, which is advantageous in that, enables the snakelike heat-generating units 5-1 in top of top heater 5 to obtain identical
Voltage, so as to obtain uniform thermal field in top heater 5.
Referring to Fig. 1 and Fig. 4,3 groups of second graphite electrode has three, and by the heating group on the side heater 2
Part is divided into resistance value identical three parts in a circumferential direction；In heating component with the corresponding position of the second graphite electrode 3
Provided with component 6 is conductively connected for connect the second graphite electrode 3 and heating component, the connecting plate 1 is made of an electrically conducting material；
The transverse slat for being conductively connected component 6 and including the riser 6-1 that is fixed in heating component and being arranged on riser 6-1 upper ends
6-2, second graphite electrode 3 are arranged on transverse slat 6-2；Three second graphite electrodes 3 respectively with the second three phase mains
U, V, W phase be connected.By setting three electrodes, not only matched with three phase mains, and these three electrodes are in circumferencial direction
On heating component is divided into resistance value identical three parts so that the caloric value at each position of circumferencial direction is uniform so that
Uniform heat is obtained in heater, the stable thermoisopleth moved up is obtained when being advantageous to crystallization.
A kind of operation principle of the combination heater of polycrystalline silicon ingot or purifying furnace of the present embodiment is：
Resistance value, size, the shape of the heat-generating units can make different specifications, and it is to be selected to form heat-generating units storehouse
With；Because the total resistance value of each heating component in same sidepiece heating module is in ascending distribution from top to bottom, and institute
Have that the total resistance value of heating component of the sidepiece heating module on sustained height is identical, therefore after to silicon raw material heating melting,
The temperature in the outside of silicon liquid 10 is distributed in ascending rule from top to bottom, and the delivery position of two adjacent groups heating component
Place, by the heat exchange of local location, temperature is not in great-jump-forward change, and can form nature transition so that outside silicon liquid 10
Temperature uniformly rises the temperature of side from top to bottom；So in crystallization, heat-insulation cage can be disposably opened, allow the outside of silicon liquid 10
There is identical radiating condition from top to bottom, because the temperature of bottom is low, rapid heat dissipation, silicon liquid 10 is long brilliant since bottom, with
The passage of time, crystallization temperature line gradually moves up so that long crystal boundary face 11 moving vertically upward progressively, due to silicon liquid 10 4
The temperature environment in week is consistent, therefore long crystal boundary face 11 can remain horizontality, uniformly be given birth to vertically upward so as to obtain
Long high-quality polysilicon.
Referring to Fig. 8-Figure 10, there is the combination heater of the polycrystalline silicon ingot or purifying furnace in the present embodiment multiple combinations mode to come in fact
Thermograde on existing vertical direction, to embody this feature of the present invention, enumerates example below：
Wherein, the heat-generating units storehouse includes small size tabular heat-generating units, large size tabular heat-generating units and snakelike heating
Unit 7, in addition, the resistance value of above-mentioned three kinds of heat-generating units increases successively；
(1) it is made up of, is located at a small size tabular heat-generating units 8 positioned at minimum heating component in sidepiece heating module
Middle heating component is made up of a large size tabular heating unit, positioned at highest heating component by a snakelike heat-generating units
7 compositions；(as shown in Figure 8)
(2) it is made up of, is located at two small size tabular heat-generating units 8 positioned at minimum heating component in sidepiece heating module
Middle heating component is made up of large size tabular heat-generating units 9, positioned at highest heating component by two snakelike 7 groups of heat-generating units
Into；(as shown in Figure 9)
(3) heating component among sidepiece heating module middle position is made up of two small size tabular heat-generating units 8, positioned at most
High heating group valency is by 9, small size tabular heat-generating units 8 of a large size tabular heat-generating units and a snakelike heat-generating units
7 compositions, heat-generating units are not provided with lowest part.(as described in Figure 10)
The combination heater of the polycrystalline silicon ingot or purifying furnace of the present invention is in real work, also various combination sides
Formula, heat-generating units storehouse are more than only three kinds of heat-generating units；By the combination of different heat-generating units, what is ultimately formed is steady
Fixed thermograde, and the temperature of vertical direction is to heat up from the bottom to top all the time, so as to improve crystallization rate and separate out crystal
Purity.
Referring to Figure 11-Figure 12, in addition, the combination of heat-generating units can also be adjusted according to the actual conditions of crystallization.Example
Such as, optimal long crystal boundary face 11 is horizontality (as shown in figure 11), however, cleaning separates out the impurity after crystal for convenience
14, the middle part in long crystal boundary face 11 can be allowed raised slightly upward, surrounding tilts down (the slightly upward raised long crystalline substance in this middle part
Interface 11 will not cause materially affect to the brilliant speed of length in long brilliant direction and each position), impurity 14 is allowed in long crystal boundary face 11
On flowed away to surrounding, be gathered in the top layer of crystal；Now, worker can separately add one in the lowermost layer of sidepiece heating module and add
Heat-generating units 13 (or from the slightly larger heat-generating units of a resistance value), the so starting stage in crystallization, can allow silicon liquid 10
The temperature of bottom periphery will cause the middle meeting of silicon liquid 10 prior to the first crystallization on periphery than more slightly higher under normal circumstances, so that
So that slightly upward raised long crystal boundary face 11, follow-up length in the middle part of just being formed in the starting stage in polycrystalline silicon ingot or purifying furnace 12
Brilliant process will keep this state to carry out, and be more beneficial for obtaining the higher crystal of purity.
Above-mentioned is the preferable embodiment of the present invention, but embodiments of the present invention are not limited by the above, its
His any Spirit Essence without departing from the present invention with made under principle change, modification, replacement, combine, simplification, should be
The substitute mode of effect, is included within protection scope of the present invention.
Claims (10)
1. a kind of combination heater of polycrystalline silicon ingot or purifying furnace, including support, it is arranged on the top heater of cantilever tip, is located at
The lateral side heater of support and graphite electrode component；Characterized in that, the side heater includes being arranged on support
Multiple sidepiece heating modules on side, each side of support set a sidepiece heating module, each sidepiece heating
Module is combined by multiple heat-generating units；Heat-generating units in each sidepiece heating module are divided into some groups of heating from top to bottom
Component；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, in same sidepiece heating module
The total resistance value of each heating component be in ascending distribution from top to bottom.
A kind of 2. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the graphite electricity
Pole component includes the first graphite electrode group being connected with top heater and the second graphite electrode being connected with side heater
Group；The first graphite electrode group and the second graphite electrode group are connected with the first three phase mains and the second three phase mains respectively.
3. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that when the heating
Heat-generating units in component for it is multiple when, these heat-generating units are vertically or/and arranged radially.
4. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the heating is single
Member includes the heat-generating units of snakelike heat-generating units and tabular.
A kind of 5. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the support bag
Four connecting plates are included, each connecting plate includes pars intermedia and is connected between two connecting portions of portion both sides；Each connecting plate
In one end respectively with the heat-generating units in two neighboring sidepiece heating module of two connecting portions be connected；Four connecting plates
All heat-generating units are connected to form rectangular frame structure.
A kind of 6. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 5, it is characterised in that each connecting portion
On be equipped with it is multiple vertically arrange for the mounting hole that is connected with heat-generating units；The both ends of each heat-generating units be equipped with
The fixing hole that the mounting hole coordinates；The heat-generating units are bolted on the connecting portion of connecting plate.
7. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the top adds
Hot device includes the snakelike heat-generating units in five tops and the fixation for the snakelike heat-generating units in each top to be connected together
Contiguous block.
A kind of 8. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 7, it is characterised in that first stone
Electrode ink group includes three the first graphite electrodes, and is evenly provided on the snakelike heat-generating units in top；Three described first
Five snakelike heat-generating units in top are bisected into the equal top heating block of three resistance values by graphite electrode；Three described
One graphite electrode is connected with U, V, W phase of the first three phase mains respectively.
A kind of 9. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 5, it is characterised in that second stone
Electrode ink group has three, and the heating component on the side heater is divided into resistance value identical three in a circumferential direction
Part；It is provided with heating component with the second graphite electrode corresponding position and is used to connect the second graphite electrode and heating component
Component is conductively connected, the connecting plate is made of an electrically conducting material；The component that is conductively connected includes being fixed on heating component
On riser and be arranged on the transverse slat of riser upper end, second graphite electrode is arranged on transverse slat；Three second stones
Electrode ink is connected with U, V, W phase of the second three phase mains respectively.
10. a kind of polycrystalline silicon ingot or purifying furnace, including body of heater, heater, crucible and thermal insulation layer, it is characterised in that the heater
For a kind of combination heater of polycrystalline silicon ingot or purifying furnace described in claim any one of 1-9.
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| CN201710893716.2A CN107523864A (en) | 2017-09-26 | 2017-09-26 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
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| CN108866622A (en) * | 2018-07-31 | 2018-11-23 | 宜昌南玻硅材料有限公司 | The heating system and its operation method of polycrystalline ingot furnace |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
| CN111254493A (en) * | 2020-03-04 | 2020-06-09 | 浙江晶阳机电股份有限公司 | Improved heating structure and heating method for silicon core ingot furnace |
| CN113028442A (en) * | 2021-03-15 | 2021-06-25 | 汪子友 | Ink stick raw materials apparatus for producing |
| CN115125622A (en) * | 2022-05-23 | 2022-09-30 | 平顶山市博翔碳素有限公司 | Graphite heater and single crystal furnace comprising same |
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