CN103628129A - Graphite heater used for Czochralski method preparation of monocrystalline silicon - Google Patents
Graphite heater used for Czochralski method preparation of monocrystalline silicon Download PDFInfo
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- CN103628129A CN103628129A CN201210309221.8A CN201210309221A CN103628129A CN 103628129 A CN103628129 A CN 103628129A CN 201210309221 A CN201210309221 A CN 201210309221A CN 103628129 A CN103628129 A CN 103628129A
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Abstract
The invention relates to a graphite heater for the Czochralski method preparation of monocrystalline silicon. The graphite heater comprises a heater body (1) forming a heating system, a sidewall heating unit (2) arranged on the sidewall of the heater body (1), and a bottom support leg (3) arranged at the bottom of the heater body (1) and used for supporting a graphite crucible, and the sidewall heating unit (2) downward and inward extends to form an arc-shaped bottom heating unit (4). A novel heating layout idea is introduced to the design of the graphite heater, so the graphite heater has the characteristics of reasonable thermal state thermal state distribution, high heat energy utilization rate, high flat-drawn heavy gauge monocrystal yield and the like on the basis of maintaining the performances of traditional heaters.
Description
Technical field
The present invention relates to a kind of heater assembly, in particular, relate to a kind of vertical pulling method and prepare the graphite heater that silicon single crystal is used.
Background technology
The current silicon single crystal of preparing is mainly by two kinds of technology, different according to crystal growth pattern, can be divided into study on floating zone silicon and pulling of silicon single crystal.Pulling of silicon single crystal is mainly used in microelectronic integrated circuit and solar cell aspect, is the main body of silicon single crystal.
Vertical pulling method is to use the condensation-crystallization drive principle of melt, at solid-liquid interface place, by melt temperature, declines, and by producing, by liquid rotating, changes solid-state phase change into.For the silicon single crystal rod of growth quality qualified (single crystal silicon resistivity, oxygen level and oxygen concn distribution, carbon content, metals content impurity, defect etc.), when adopting Grown by CZ Method, must consider following problem.First be according to technical requirements, the single crystal growth apparatus that choice for use is suitable, is secondly preparation technology, the technology of a whole set of silicon single crystal of GPRS, comprising: the intrasystem thermal field design of (1) silicon single crystal, guarantee that crystal growth has the thermograde of reasonably stability; (2) the intrasystem argon gas system design of monocrystalline silicon growing 1; (3) silicon single crystal is seized the design of technological system on both sides by the arms; (4) for the design of the continuous charging system of enhancing productivity; (5) silicon single crystal preparation technology's process control.
The transmission of heat is by three kinds of Main Patterns, that is radiation, convection current and thermal conduction.Because the growth of crystal is at high temperature to carry out, so these three kinds of patterns are all present in system.In vertical pulling method, melt is to be heated by the radiant heat of graphite heater, and the thermal conduction of melt inside is mainly against convection current, and the heat of crystal bar inside is transmitted mainly against conduction.In addition, from liquid level and crystal bar surface, being lost to peripheral heat is by radiation effect.Intrasystem temperature distribution has a great impact crystal growth quality.Comprise precipitate generation of the density of defect and distribution, oxygen etc.
Pulling of crystals manufacturing process (Czochralski, CZ method) is that the many silicon crystal blocks of raw material are put into and adapted to crucible, heating and melting in single crystal growing furnace, then only have the bar-shaped crystal seed (seed crystal) of 10mm to immerse in liquation a diameter.At suitable temperature, the Siliciumatom in liquation can, along the crystallization of Siliciumatom arrangement architecture formation rule on solid-liquid interface of crystal seed, become single crystal.The rotation that crystal seed is slight upwards promotes, and continues crystallization, and continue its regular atomic arrangement structure on the single crystal that the Siliciumatom in liquation can form above.If whole crystalline environment is stable, the formation crystallization that just can go round and begin again, finally forms the silicon single-crystal crystal that columniform atomic arrangement is neat, i.e. a silicon single crystal ingot.
Single crystal growing furnace mostly adopts graphite heater to carry out heat fused to the polycrystal raw material adapting in crucible at present.Common graphite well heater, as depicted in figs. 1 and 2, is evenly to slot on an annular graphite, and then energising heating on electrode leg, and general voltage is less than 60VDC, and 22 inch thermal field maximum heating power are at 165kw.The axial resistance of this well heater is even, heating power is axially even, and when large thermal field is considered crystal pulling, thermal field gradient needs, and a bottom graphite heater is installed below ring heater again, referring to Fig. 3, as 24 inch thermal field thermal fields bottoms apply the bottom-heated power of maximum 20kw.At present domestic 22 inch thermal fields are all single heater structures, and 24 inches and above thermal field are double-heater structures.Arranging like this increased equipment investment and complicated operation.
CN101580962A provides a kind of improvement structure of graphite heater of czochralski crystal growing furnace.This well heater comprises has arranged annular graphite heater mutual and that evenly slot in the axial direction, an attenuate heating zone is set on annular graphite heater, the radial cross-section of attenuate heating zone amass into the radial cross-section at all the other positions of well heater long-pending 2/3～3/4; Described attenuate heating zone refers to from the bottom of well heater 1/5～1/4 part to total height.The invention enables heating power to increase at the attenuate place of well heater, axial distribution is changed, between be connected on ring heater bottom and form an additional bottom heater function, thereby the structure design by single graphite heater but can reach the effect that annular graphite heater in original technology adds two well heaters of bottom heater.Its heating that arranges so mainly occurs near in the annular wall of annular graphite heater, and the bottom of annular graphite heater is difficult to be heated, hot skewness weighing apparatus.
And for the market of preparing silicon single crystal, its demand is toward drawing major diameter single crystal development, and the growth of major diameter single crystal is along with the increasing of hot system dimension, just need more balanced hot distribution, more stable temperature is controlled, and controls the problem that energy consumption has also become necessary consideration.Traditional well heater is unable to do what one wishes when drawing large size single crystal, when drawing more than 9 cun monocrystalline, all needing increases bottom-heated or insulation to single crystal growing furnace, and fill bottom heater, need to change furnace hearth plate, add two electrodes and water-cooled, increased cost and difficult technology is larger.And the improvement structure of the graphite heater of above-mentioned czochralski crystal growing furnace also obviously cannot meet the demand.
Summary of the invention
Above-mentioned for overcoming, the object of the present invention is to provide a kind of vertical pulling method to prepare the graphite heater that silicon single crystal is used, this graphite heater, without transformation single crystal furnace equipment in the situation that, is realized bottom heater effect.
To achieve these goals, the present invention adopts following technical scheme:
A kind of vertical pulling method is prepared the graphite heater that silicon single crystal is used, comprise form heating system heater body, be arranged on the sidewall heating element of heater body sidewall and be arranged on heater body bottom for supporting the bottom support pin of plumbago crucible, wherein: described sidewall heating element is downwards and extend internally and form the bottom heater of arc.
The present invention introduces type of heat layout principle in graphite heater design, by by sidewall heating element downwards and the structure design of the bottom heater that forms arc of extending internally, can not only reach the effect that annular graphite heater in original technology adds two well heaters of bottom heater, and the design before comparing, bottom is more easily heated, and has that hot distribution is reasonable, heat utilization rate is high, draws large size single crystal yield rate high under the basis that maintains conventional heater performance.
In the present invention, the number of the sidewall heating element of setting is the lobe number of calorifier, can, according to practical situation, be arranged to 16 lobes, 20 lobes, 24 lobes, 28 lobes, 36 lobes.Bottom heater has identical lobe number with sidewall heating element.
In the present invention, described bottom support pin supports the upper surface of plumbago crucible higher than the horizontal plane at the end place of bottom heater.
In the present invention, the distance that described bottom heater extends internally is less than the distance that bottom support pin extends internally.
If the distance that bottom heater extends internally is greater than the distance that bottom support pin extends internally, when plumbago crucible drops to lower position during crystal pulling, bottom heater may will be encountered plumbago crucible, causes the accident.Adopt design of the present invention, generation that can Accident prevention, guarantees the safety of crystal pulling process.
In the present invention, the arc width of described bottom heater radially reduces from outside to inside gradually.
In the present invention, by reducing gradually the arc width of bottom heater, can prevent that every lobe bottom heater from more leaning on and more finally touching together, the more important thing is and can increase resistance, increase the thermal value of bottom heater.
In the present invention, described bottom heater forms arc with sidewall heating element and docks.
In the present invention, described heater body is cylindric.
In the present invention, on the axial direction due of the cylindrical wall of heater body, be evenly provided with the fluting of arranging sidewall heating element.
In the present invention, in described sidewall heating element, be filled with fine strip shape graphite.
In the present invention, in described bottom heater, be filled with graphite.
In the present invention, the consistency of thickness of the graphite of filling in described bottom heater and sidewall heating element.
Prepare the market requirement of silicon single crystal toward drawing major diameter single crystal development, and the growth of major diameter single crystal is along with the increasing of hot system dimension, just needs more balanced hot distribution, more stable temperature is controlled, and controls the problem that energy consumption has also become necessary consideration.Traditional well heater is unable to do what one wishes when drawing large size single crystal, when drawing more than 9 cun monocrystalline, all needing increases bottom-heated or insulation to single crystal growing furnace, and fill bottom heater, need to change furnace hearth plate, add two electrodes and water-cooled, increased cost and difficult technology is larger.Integrated cylindric well heater with bottom heater function of the present invention changes complete straight tube heater shape in the past, has increased the bottom heater that extend to cylinder interior bottom, while drawing major diameter single crystal without bottom heater.
Adopt technique scheme, the present invention has following beneficial effect:
(1) the present invention, without transformation single crystal furnace equipment in the situation that, realizes bottom heater effect, saves technology upgrading cost;
(2) graphite heater of the present invention of comparable size contrasts traditional cylinder graphite heater, has the advantages that heat utilization rate is high, and energy-conservation 4%～8%;
(3) when drawing is greater than the monocrystalline of 9 cun, stable temperature control, the thermal convection of silicon solution is little, and crystal forming rate improves 2%～4%.
Accompanying drawing explanation
Fig. 1 is the annular graphite heater structural representation of existing standard;
Fig. 2 is the vertical view of annular graphite heater in Fig. 1;
Fig. 3 is the structural representation of the bottom heater that is used in conjunction with of the annular graphite heater with Fig. 1;
Fig. 4 is the side-view that the vertical pulling method of the embodiment of the present invention 1 is prepared the graphite heater that silicon single crystal uses;
Fig. 5 is the vertical view that the vertical pulling method of the embodiment of the present invention 1 is prepared the graphite heater that silicon single crystal uses;
Wherein,
1---heater body, 2---sidewall heating element, 3---bottom support pin, 4---bottom heater, 5---fluting.
Embodiment
Below in conjunction with embodiment, the present invention is described in more detail.
A kind of vertical pulling method is as shown in Figure 4 and Figure 5 prepared the graphite heater that silicon single crystal is used, comprise form heating system heater body 1, be arranged on the sidewall heating element 2 of heater body 1 sidewall and be arranged on heater body 1 bottom for supporting the bottom support pin 3 of plumbago crucible, described sidewall heating element 2 is downwards and extend internally and form the bottom heater 4 of arc.
The present invention introduces type of heat layout principle in graphite heater design, by by sidewall heating element downwards and the structure design of the bottom heater that forms arc of extending internally, can not only reach the effect that annular graphite heater in original technology adds two well heaters of bottom heater, and the design before comparing, bottom is more easily heated, and has that hot distribution is reasonable, heat utilization rate is high, draws large size single crystal yield rate high under the basis that maintains conventional heater performance.
In order to guarantee the safety of crystal pulling process, and fully realize bottom-heated function, bottom support pin 3 of the present invention supports the upper surface of plumbago crucible higher than the horizontal plane at the end place of bottom heater 4.As shown in Figure 4.
For further guaranteeing the security of crystal pulling process, the distance that bottom heater 4 of the present invention extends internally is less than the distance that bottom support pin 3 extends internally.When in the time of can preventing crystal pulling like this, plumbago crucible drops to lower position, bottom heater is encountered plumbago crucible, thus the generation of Accident prevention.
In the present invention, the arc width of described bottom heater 4 radially reduces from outside to inside gradually.Referring to Fig. 5.In the present invention, by reducing gradually the arc width of bottom heater, can prevent that every lobe bottom heater from more leaning on and more finally touching together, the more important thing is and can increase resistance, increase the thermal value of bottom heater.
In the present invention, described bottom heater 4 forms arc with sidewall heating element 2 and docks.
In the present invention, described heater body 1 is cylindric.On the axial direction due of the cylindrical wall of heater body 1, be evenly provided with the fluting 5 of arranging sidewall heating element 2.In described sidewall heating element 2, be filled with fine strip shape graphite.In described bottom heater 4, be filled with graphite.Described bottom heater 4 and the consistency of thickness of the graphite of sidewall heating element 2 interior fillings.
In the present invention, can be for wall thickness and the lobe number of the different resistivity of graphite material and single crystal growing furnace heating requirement design graphite heater.As for 22 cun of thermal field well heaters, the wall thickness of heater body is 20mm～24mm, and the lobe number of well heater is 32 lobes, designs 4 bottom support pin, and wherein 2 bottom electrode pin, 2, for supporting the bottom support pin of plumbago crucible, are symmetric; Every two lobe sidewall heating elements are connected between two, to the cylinder interior of heater body is curved, enter, and height is consistent with bottom support pin downwards, and inwardly curved to enter distance be 50mm～100mm; Bottom heater part forms arc with sidewall heating element and docks; Bottom heater part itself is circular arc design.
The lobe number of adjusting well heater is 16 lobes, 20 lobes, 24 lobes, 28 lobes, 36 lobes, according to the different resistivity of graphite material and single crystal growing furnace heating, requires to determine.
Other are with embodiment 1.
For the graphite field system (20 cun, 24 cun, 26 cun, 28 cun, 30 cun, 32 cun) of different size, the length of change heating element, electrode pin, feet and height are to reach the object that increases bottom-heated function.
According to the framework of matching used other graphite piece and single crystal growing furnace, can appropriate change bottom heater with respect to the size of bottom support pin.
Adopt graphite heater provided by the present invention without transformation single crystal furnace equipment in the situation that, to realize bottom heater effect, save technology upgrading cost; The graphite heater of the present invention of comparable size contrasts traditional cylinder graphite heater, has the advantages that heat utilization rate is high, and energy-conservation 4%～8%; When drawing is greater than the monocrystalline of 9 cun, stable temperature control, the thermal convection of silicon solution is little, and crystal forming rate improves 2%～4%.
Embodiment in above-described embodiment can further combine or replace; and embodiment is described the preferred embodiments of the present invention; not the spirit and scope of the present invention are limited; do not departing under the prerequisite of design philosophy of the present invention; the various changes and modifications that in this area, professional and technical personnel makes technical scheme of the present invention, all belong to protection scope of the present invention.
Claims (10)
1. a vertical pulling method is prepared the graphite heater that silicon single crystal is used, comprise form heating system heater body (1), be arranged on the sidewall heating element (2) of heater body (1) sidewall and be arranged on heater body (1) bottom for supporting the bottom support pin (3) of plumbago crucible, it is characterized in that: described sidewall heating element (2) is downwards and extend internally and form the bottom heater (4) of arc.
2. graphite heater according to claim 1, is characterized in that, described bottom support pin (3) supports the upper surface of plumbago crucible higher than the horizontal plane at the end place of bottom heater (4).
3. graphite heater according to claim 2, is characterized in that, the distance that described bottom heater (4) extends internally is less than the distance that bottom support pin (3) extends internally.
4. graphite heater according to claim 3, is characterized in that, the arc width of described bottom heater (4) radially reduces from outside to inside gradually.
5. according to the graphite heater described in claim 1-4 any one, it is characterized in that, described bottom heater (4) forms arc with sidewall heating element (2) and docks.
6. according to the graphite heater described in claim 1-4 any one, it is characterized in that, described heater body (1) is cylindric.
7. graphite heater according to claim 6, is characterized in that, is evenly provided with the fluting (5) of arranging sidewall heating element (2) on the axial direction due of the cylindrical wall of heater body (1).
8. graphite heater according to claim 7, is characterized in that, in described sidewall heating element (2), is filled with fine strip shape graphite.
9. graphite heater according to claim 8, is characterized in that, described bottom heater is filled with graphite in (4).
10. graphite heater according to claim 9, is characterized in that, the consistency of thickness of the graphite of described bottom heater (4) and the interior filling of sidewall heating element (2).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210309221.8A CN103628129A (en) | 2012-08-27 | 2012-08-27 | Graphite heater used for Czochralski method preparation of monocrystalline silicon |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210309221.8A CN103628129A (en) | 2012-08-27 | 2012-08-27 | Graphite heater used for Czochralski method preparation of monocrystalline silicon |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106222736A (en) * | 2016-10-17 | 2016-12-14 | 宁夏协鑫晶体科技发展有限公司 | Heater for pulling of crystals |
| CN107779945A (en) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | Heater and single crystal pulling stove thermal field structure |
| CN112391676A (en) * | 2019-08-13 | 2021-02-23 | 新特能源股份有限公司 | Single crystal furnace thermal field, control method thereof and single crystal furnace |
| CN114875478A (en) * | 2022-05-26 | 2022-08-09 | 西安奕斯伟材料科技有限公司 | Heater and single crystal furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114875478B (en) * | 2022-05-26 | 2024-03-19 | 西安奕斯伟材料科技股份有限公司 | Heater and single crystal furnace |
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Application publication date: 20140312 |