CN201678762U - Graphite crucible for preparing monocrystalline silicon with Czochralski method - Google Patents
Graphite crucible for preparing monocrystalline silicon with Czochralski method Download PDFInfo
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- CN201678762U CN201678762U CN2010201238461U CN201020123846U CN201678762U CN 201678762 U CN201678762 U CN 201678762U CN 2010201238461 U CN2010201238461 U CN 2010201238461U CN 201020123846 U CN201020123846 U CN 201020123846U CN 201678762 U CN201678762 U CN 201678762U
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- plumbago crucible
- crucible
- sidewall
- plumbago
- outer side
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Abstract
The utility model discloses a graphite crucible for preparing monocrystalline silicon with Czochralski method. The graphite crucible comprises a graphite crucible body formed by a bottom and side walls. The graphite crucible comprises an inner bottom surface and an inside surface limiting the internal capacity and an outer bottom surface and an outside surface limiting the heat transfer area. The outer bottom surface is a plane. The outside surface is parallel to a vertical central shaft. The outer bottom surface is vertical to the outside surface. Due to the adoption of the utility model, the thermal field for preparing monocrystalline silicon with Czochralski method is further optimized, the bottom of the graphite crucible is effectively prevented from adhering to the base, and the service life of the graphite crucible is prolonged.
Description
Technical field
The utility model relates to a kind of crucible, and particularly a kind of vertical pulling method prepares the employed plumbago crucible of silicon single crystal.
Background technology
Current preparation silicon single crystal according to the crystal growth pattern difference, can be divided into study on floating zone silicon and pulling of silicon single crystal mainly by two kinds of technology.Pulling of silicon single crystal is mainly used in microelectronic integrated circuit and solar cell aspect, is the main body of silicon single crystal.
Vertical pulling method is the condensation-crystallization drive principle of utilization melt, at the solid-liquid interface place, descends by melt temperature, becomes solid-state phase change with producing by liquid transition.For the silicon single crystal rod of growth quality qualified (single crystal silicon resistivity, oxygen level and oxygen concn distribution, carbon content, metals content impurity, defective etc.), when adopting Grown by CZ Method, must consider following problem.At first being according to technical requirements, selecting to use suitable single crystal growth apparatus, secondly is preparation technology, the technology of a whole set of silicon single crystal of GPRS, comprising: the intrasystem thermal field design of (1) silicon single crystal, guarantee that crystal growth has the thermograde of reasonably stability; (2) monocrystalline silicon growing 1 intrasystem argon gas system design; (3) silicon single crystal is seized the design of technological system on both sides by the arms; (4) for the design of the continuous charging system that enhances productivity; (5) silicon single crystal preparation technology's process control.
The transmission of heat is by three kinds of main patterns, that is radiation, convection current and thermal conduction.Because the crystalline growth is at high temperature to carry out, so these three kinds of patterns all are present in the system.In vertical pulling method, melt is to be heated by the radiant heat of graphite heater, and the thermal conduction of melt inside then is mainly against convection current, and crystalline substance is tied up inner heat transfer mainly against conduction.In addition, being lost to peripheral heat from liquid level and crystal bar surface then is by radiation effect.Intrasystem temperature distribution has very big influence to the crystal growth quality.Comprise the precipitate generation of density of defects and distribution, oxygen etc.
The growth interface of the silicon crystal in the CZ method is upwards expansion (along crystal growth direction) normally, so, its inner bottom surface of the quartz crucible that holds the silicon material commonly used is spherical or arcuation, quartz crucible places in the plumbago crucible, the inner bottom surface of plumbago crucible is the spherical or arcuation that adapts, and the crucible outer bottom is also made adapt spherical.During the preparation silicon seed, provide thermal source by the lateral heater element of crucible, the temperature outside that causes melt is than central shaft height, the melt bottom is than liquid level temperature height, because the density of silicon material increases with temperature and reduces, therefore the melt of bottom can up flow by buoyancy, and the preparation system is carried out heat exchange by the heating unit of plumbago crucible wall and both sides, and the plumbago crucible wall radiating effect of arcuation is not ideal.In addition, can produce gas in the preparation process of silicon, condensing into liquid after the gas chance is cold can flow on the collet of plumbago crucible along arcual bottom surface, causes plumbago crucible and collet adhesion at last.Reduce the work-ing life of crucible, be unfavorable for the production of silicon single crystal.
Chinese patent CN201351186, application number is 200920113530.1 to disclose a kind of novel graphite crucible, this plumbago crucible is made up of the crucible body, the crucible body is made up of at least two identical sidewall of crucible assemblies and the crucible bottom component that matches with the sidewall of crucible assembly, this plumbago crucible is compared with the plumbago crucible of routine, reduced the volume of each part, thereby can reduce the tooling cost of plumbago crucible, and avoided original plumbago crucible assembly bottom to contain the tip, the hidden danger that may exist most advanced and sophisticated place to collide with and cause siliconising, leak silicon.But sidewall of crucible assembly that it adopts the sidewall of crucible assembly of arcuation still can't overcome to cause after the liquefaction of gases and the adhesion problems between the crucible bottom component.
In view of this, special the utility model that proposes.
The utility model content
The purpose of this utility model is to provide a kind of vertical pulling method to prepare the employed plumbago crucible of silicon single crystal, makes it have better heat transfer property and solves the technical problem of crucible and base adhesion in the prior art.In order to realize this purpose, the utility model adopts following technical scheme: a kind of vertical pulling method prepares the employed plumbago crucible of silicon single crystal, comprise the plumbago crucible body of forming by bottom and sidewall, this plumbago crucible body comprises inner bottom surface, medial surface that limits internal capacity and outer bottom, the outer side that limits heat transfer area, it is characterized in that: described outer bottom is the plane, outer side is parallel to vertical central shaft, and outer bottom is vertical mutually with outer side.
Described plumbago crucible body comprises at least two identical plumbago crucible assemblies that are made of bottom and sidewall.
The medial surface of described plumbago crucible body and vertical central axes, inner bottom surface is the ball arcuation, and radius of the radian is R1, and for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface and the medial surface, and described R1 is more than or equal to R2.
Described plumbago crucible bottom is provided with a circle catch.
Described plumbago crucible bottom vertically is reverse gibbous shape.
Described plumbago crucible outer side and outer bottom constitute right cylinder or prism.
Described prism seamed edge is 4-16.
Described prism seamed edge is 8-12.
The ratio range of described plumbago crucible bottom thickness and sidewall thickness is 1: 3-3: 1.
The ratio range of described plumbago crucible bottom thickness and sidewall thickness is 1: 2-2: 1.
The utility model discloses a kind of plumbago crucible, comprise the plumbago crucible body of forming by bottom and sidewall, this plumbago crucible body comprises inner bottom surface, medial surface that limits internal capacity and outer bottom, the outer side that limits heat transfer area, outer bottom is the plane, outer side is parallel to vertical central shaft, and outer bottom is vertical mutually with outer side.
Can produce hot steam in the process of preparation silicon single crystal, the outer wall that forms the liquid runs down plumbago crucible after the hot steam condensation flows to the bottom, with the outer side of plumbago crucible and outer bottom be made as vertical after, liquid can effectively avoid liquid to cause crucible and collet adhesion directly under the outer wall of crucible.When the condensed liquid of hot steam more after a little while, flow into the bottom again after may existing liquid to flow down and cause bonding with the junction of collet along outer wall vertical.Therefore, the utility model also can be selected in the bottom and be provided with catch or crucible bottom is set as reverse gibbous shape, further avoids the flow direction bottom, and directly drips along sidewall.
The shape of the inner surface configuration of plumbago crucible body and quartz crucible bottom adapts, its medial surface and vertical central axes, and inner bottom surface is the ball arcuation, radius of the radian is R1, for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface and the medial surface, and described R1 is more than or equal to R2.
Because the thermal field the when shape of plumbago crucible prepares silicon single crystal has very big influence, discover when the outside surface of plumbago crucible is right cylinder or prism, because it is big that outer surface area becomes, it is big that heat exchange area becomes, and the thermal field during preparation can further be optimized.When outside surface was prism, seamed edge was 4-16, preferred 8-12.The the picking and placeing and clearing up of plumbago crucible for convenience, one makes many lobes crucible of being made up of at least two identical plumbago crucible assemblies that are made of bottom and sidewall plumbago crucible.The utility model is preferably made three lobe crucibles or pintongs crucible.
In addition, the thermal field of contriver when vertical pulling method is prepared silicon single crystal done systematic study, find that all there are influence in change plumbago crucible sidewall thickness and bottom thickness to the thermal conduction effect of plumbago crucible, because the bottom of plumbago crucible is the ball arcuation, sidewall is also with the bottom that arc is spherical to be connected, therefore the thickness of sidewall and bottom is a numerical range, the contriver has done a large amount of experiments, find that further the ratio range when plumbago crucible sidewall thickness and bottom thickness is 1: 3-3: in the time of 1, the heat conductivility of stone mill crucible is more satisfactory, when ratio range is 1: 2-2: in the time of 1, best results.
Adopt technique scheme, the utlity model has following beneficial effect: 1. the outside surface of plumbago crucible is made cylinder and helped the crucible heat radiation, thereby further optimized the thermal field of system.
2. the condensed liquid of hot steam can drip along crucible outer wall or catch, avoids liquid to cause crucible and collet adhesion.
3. improve the work-ing life of crucible greatly.
Description of drawings
Fig. 1 longitudinal sectional view Fig. 2 of the present utility model longitudinal sectional view Fig. 3 of the present utility model longitudinal sectional view Fig. 4 of the present utility model structural representation Fig. 5 of the present utility model structural representation Fig. 1 of the present utility model plumbago crucible body 2 plumbago crucible assemblies 11 bottoms 12 sidewalls, 13 catch B11 inner bottom surface B12 medial surface A11 outer bottom A12 outer sides.
Embodiment
Below in conjunction with embodiment the utility model is described in more detail.
The medial surface B12 of plumbago crucible body 1 and vertical central axes, inner bottom surface B11 is the ball arcuation, and radius of the radian is R1, and for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface B11 and the medial surface B12, and described R1 is greater than R2.Plumbago crucible outer side A12 and outer bottom A11 constitute right cylinder.
The ratio range of plumbago crucible bottom 11 thickness and sidewall 12 thickness is 1: 3-1: 1.
The medial surface B12 of plumbago crucible body 1 and vertical central axes, inner bottom surface B11 is the ball arcuation, and radius of the radian is R1, and for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface B11 and the medial surface B12, and described R1 is more than or equal to R2.
As shown in Figure 4, plumbago crucible body 1 is three lobe crucibles, comprises three identical plumbago crucible assemblies 2 that are made of bottom 11 and sidewall 12.Plumbago crucible outer side A12 and outer bottom A11 constitute right cylinder.In order further to prevent flow direction plumbago crucible bottom 11, as shown in Figure 2, can be provided with a circle catch 13 in plumbago crucible bottom 11.
The ratio range of plumbago crucible bottom 11 thickness and sidewall 12 thickness is 1: 1-3: 1.
Embodiment 3 plumbago crucible as shown in Figure 1, comprise the plumbago crucible body of forming by bottom 11 and sidewall 12 1, this plumbago crucible body 1 comprises inner bottom surface B11, medial surface B12 that limits internal capacity and outer bottom A11, the outer side A12 that limits heat transfer area, described outer bottom A11 is the plane, outer side A12 is parallel to vertical central shaft, and outer bottom A11 is vertical mutually with outer side A12.
The medial surface B12 of plumbago crucible body 1 and vertical central axes, inner bottom surface B11 is the ball arcuation, and radius of the radian is R1, and for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface B11 and the medial surface B12, and described R1 is more than or equal to R2.
Plumbago crucible body 1 is the pintongs crucible, comprises four identical plumbago crucible assemblies 2 that are made of bottom 11 and sidewall 12.Plumbago crucible outer side A12 and outer bottom A11 constitute right cylinder.As shown in Figure 3, plumbago crucible bottom 11 vertically is reverse gibbous shape.Prevent flow direction plumbago crucible bottom 11.
The ratio range of plumbago crucible bottom 11 thickness and sidewall 12 thickness is 1: 3-2: 1.
Embodiment 4 a kind of vertical pulling method as described in Figure 1 prepares the employed plumbago crucible of silicon single crystal, comprise the plumbago crucible body of forming by bottom 11 and sidewall 12 1, this plumbago crucible body 1 comprises inner bottom surface B11, medial surface B12 that limits internal capacity and outer bottom A11, the outer side A12 that limits heat transfer area, it is characterized in that: described outer bottom A11 is the plane, outer side A12 is parallel to vertical central shaft, and outer bottom A11 is vertical mutually with outer side A12.
The medial surface B12 of plumbago crucible body 1 and vertical central axes, inner bottom surface B11 is the ball arcuation, and radius of the radian is R1, and for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface B11 and the medial surface B12, and described R1 is more than or equal to R2.
As shown in Figure 5, plumbago crucible body 1 is the pintongs crucible, comprises four identical plumbago crucible assemblies 2 that are made of bottom 11 and sidewall 12.Plumbago crucible outer side A12 and outer bottom A11 constitute quadrangular.
The ratio range of plumbago crucible bottom 11 thickness and sidewall 12 thickness is 1: 2-2: 1.
Embodiment 5-7 is identical with embodiment 4, and difference is that it is 3,8,12,16 that the prism seamed edge of outside surface is respectively.
Embodiment in the foregoing description can further make up or replace; and embodiment is described preferred embodiment of the present utility model; be not that design of the present utility model and scope are limited; under the prerequisite that does not break away from the utility model design philosophy; the various changes and modifications that the professional and technical personnel makes the technical solution of the utility model in this area all belong to protection domain of the present utility model.
Claims (10)
1. a vertical pulling method prepares the employed plumbago crucible of silicon single crystal, comprise the plumbago crucible body of forming by bottom (11) and sidewall (12) (1), this plumbago crucible body (1) comprises inner bottom surface (B11), medial surface (B12) that limits internal capacity and outer bottom (A11), the outer side (A12) that limits heat transfer area, it is characterized in that: described outer bottom (A11) is the plane, outer side (A12) is parallel to vertical central shaft, and outer bottom (A11) is vertical mutually with outer side (A12).
2. plumbago crucible as claimed in claim 1 is characterized in that: described plumbago crucible body (1) comprises at least two identical plumbago crucible assemblies (2) by bottom (11) and sidewall (12) formation.
3. plumbago crucible as claimed in claim 1 or 2, it is characterized in that, the medial surface (B12) of described plumbago crucible body (1) and vertical central axes, inner bottom surface (B11) is the ball arcuation, radius of the radian is R1, for spherical arc shape is connected, radius of the radian is R2 between inner bottom surface (B11) and the medial surface (B12), and described R1 is more than or equal to R2.
4. plumbago crucible as claimed in claim 3 is characterized in that: described plumbago crucible bottom (11) is provided with a circle catch (13).
5. plumbago crucible as claimed in claim 3 is characterized in that: described plumbago crucible bottom (11) vertically is reverse gibbous shape.
6. plumbago crucible as claimed in claim 3 is characterized in that: described plumbago crucible outer side (A12) constitutes right cylinder or prism with outer bottom (A11).
7. plumbago crucible as claimed in claim 6 is characterized in that: described prism seamed edge is 4-16.
8. plumbago crucible as claimed in claim 7 is characterized in that: described prism seamed edge is 8-12.
9. plumbago crucible as claimed in claim 6 is characterized in that: the ratio range of described plumbago crucible bottom (11) thickness and sidewall (12) thickness is 1: 3-3: 1.
10. plumbago crucible as claimed in claim 9 is characterized in that: the ratio range of described plumbago crucible bottom (11) thickness and sidewall (12) thickness is 1: 2-2: 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201238461U CN201678762U (en) | 2010-03-05 | 2010-03-05 | Graphite crucible for preparing monocrystalline silicon with Czochralski method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010201238461U CN201678762U (en) | 2010-03-05 | 2010-03-05 | Graphite crucible for preparing monocrystalline silicon with Czochralski method |
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| CN201678762U true CN201678762U (en) | 2010-12-22 |
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| CN2010201238461U Expired - Fee Related CN201678762U (en) | 2010-03-05 | 2010-03-05 | Graphite crucible for preparing monocrystalline silicon with Czochralski method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103290473A (en) * | 2012-02-28 | 2013-09-11 | 三菱综合材料株式会社 | Quartz crucible, production method of the same, and casting apparatus |
| CN103987881A (en) * | 2011-12-12 | 2014-08-13 | 维苏威法国股份有限公司 | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
| CN106167916A (en) * | 2015-05-18 | 2016-11-30 | 丰田自动车株式会社 | The manufacture method of SiC single crystal |
-
2010
- 2010-03-05 CN CN2010201238461U patent/CN201678762U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103987881A (en) * | 2011-12-12 | 2014-08-13 | 维苏威法国股份有限公司 | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
| CN103290473A (en) * | 2012-02-28 | 2013-09-11 | 三菱综合材料株式会社 | Quartz crucible, production method of the same, and casting apparatus |
| CN106167916A (en) * | 2015-05-18 | 2016-11-30 | 丰田自动车株式会社 | The manufacture method of SiC single crystal |
| CN106167916B (en) * | 2015-05-18 | 2019-01-04 | 丰田自动车株式会社 | The manufacturing method of SiC single crystal |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101222 Termination date: 20160305 |