CN104357906A - Multi-crucible three-dimensional sapphire single crystal growing device - Google Patents
Multi-crucible three-dimensional sapphire single crystal growing device Download PDFInfo
- Publication number
- CN104357906A CN104357906A CN201410677422.2A CN201410677422A CN104357906A CN 104357906 A CN104357906 A CN 104357906A CN 201410677422 A CN201410677422 A CN 201410677422A CN 104357906 A CN104357906 A CN 104357906A
- Authority
- CN
- China
- Prior art keywords
- crucible
- well heater
- heater
- single crystal
- hot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a growing device, in particular relates to a multi-crucible three-dimensional sapphire single crystal growing device and belongs to the technical field of preparation of crystals. According to the technical scheme, the multi-crucible three-dimensional sapphire single crystal growing device comprises a furnace body and a vacuum device arranged outside the furnace body, wherein a heat insulation screen is arranged inside the furnace body; a single crystal growing crucible mechanism is arranged inside the heat insulation screen and comprises at least two crucible bodies; the crucible bodies in the single crystal growing crucible mechanism are independent of each other. According to the multi-crucible three-dimensional sapphire single crystal growing device, at least two crucible bodies are arranged in the furnace body; with cooperation of the vacuum device and a heating device, at least two sapphire single crystals can be prepared at one time; the growth rate is improved; the yield of the crystals is improved; rectangular crystals can be conveniently processed and cut in subsequent processes; the energy consumption is saved; the cost is lowered; the multi-crucible three-dimensional sapphire single crystal growing device is safe and reliable.
Description
Technical field
The present invention relates to a kind of growing apparatus, the three-dimensional Sapphire Crystal Growth device of especially a kind of many crucibles, belongs to the technical field of crystal preparation.
Background technology
Sapphire crystal chemical property is highly stable, generally water insoluble and acid and alkali, caustic corrosion, only has at higher temperatures (300 DEG C) to can be hydrofluoric acid, the potassium hydroxide of phosphoric acid and fusing corroded.Sapphire crystal hardness is very high, is Mohs' hardness 9 grades, is only second to the hardest diamond.It has good light transmission, heat conductivity and electric insulating quality, mechanics good mechanical property, and has wear-resisting and weather-proof feature.The fusing point of sapphire crystal is 2050 DEG C, and boiling point 3500 DEG C, maximum operating temperature can reach 1900 DEG C.Therefore, sapphire, as a kind of important technology crystal, has been widely used in many fields of science and technology, national defence and civilian industry.Current Sapphire Substrate is as the critical material of LED field, and its large size, high quality, high utilization rate have become difficulty and the target of industry development.
The growth pattern that sapphire crystal grows from melt, the features such as to have growth velocity fast due to it, and the high and perfection of crystal of purity is good, thus become the most frequently used crystal growth pattern preparing large size and specified shape crystal.
The growth method existing a variety of method at present of sapphire crystal material, mainly contains: kyropoulos, EFG technique, heat-exchanging method, crystal pulling method, falling crucible method etc.
Traditional sapphire crystal growth method many employings a is long brilliant to seed crystal, because LED field uses c to make substrate to wafer mostly, the crystal then obtained needs to carry out drawing a series of following process such as rod, section, polishing could meet service requirements, this makes the utilization ratio of crystal very low, is difficult to obtain high profit.A kind of novel Sapphire Crystal Growth device is suggested, if publication number is the open file of CN102828232A, technical scheme in described open file makes sapphire single-crystal grow in length, width and height three directions simultaneously, thus improve the speed of growth of crystal, the more important thing is and saved energy consumption, reduce the time of production, human and material resources cost, shorten the production cycle, improve production efficiency.
Therefore, develop a kind of large size, high utilization rate, short period, low cost can be used for the high-quality Sapphire Crystal Growth device of LED substrate, and double crucible technique can make single furnace output be multiplied, and single stove cost reduces further.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of many crucibles three-dimensional Sapphire Crystal Growth device, it can improve the production efficiency of crystal, and energy efficient reduces costs, safe and reliable.
According to technical scheme provided by the invention, the three-dimensional Sapphire Crystal Growth device of described many crucibles, comprises body of heater and is positioned at the vacuum unit outside described body of heater; Be provided with heat protection screen in described body of heater, be provided with single crystal growing crucible mechanism in described heat protection screen, described single crystal growing crucible mechanism comprises at least two crucible bodies, and the crucible body in described single crystal growing crucible mechanism is separate.
Described crucible body comprises and is positioned at top and the rectangular cast of vertically distribution and be positioned at the wedge surface body of bottom, and be provided with seed slot in the wedge surface body of crucible body, the tapering in described wedge surface portion is 80 ° ~ 110 °.
The heating unit being positioned at single crystal growing crucible mechanism outer ring is also provided with in described heat protection screen, described heating unit comprises the well heater being evenly distributed on the external circle of crucible, described well heater provide in heat protection screen a of a single crystal growing to, b to and c to three dimensional temperature gradient.
Described well heater comprises right well heater, left well heater, post-heater and front well heater; Described right well heater is positioned at the right side of heat protection screen, and left well heater is positioned at the left side of heat protection screen, and post-heater is positioned at the rear side of heat protection screen, and front well heater is positioned at the front side of heat protection screen; Right well heater is arranged the upper right thermopair being used for detected temperatures, left well heater is arranged the lower-left thermopair being used for detected temperatures, post-heater is arranged the rear thermopair being used for detected temperatures, front well heater is arranged the front thermopair being used for detected temperatures.
Described crucible body adopts molybdenum or miramint welding to make.
Described well heater comprises hot-plate, described hot-plate is arranged some equally distributed upper separate slots and lower separate slot, and described upper separate slot and lower separate slot are on hot plate in parallel distribution, and upper separate slot and lower separate slot are alternately distributed on the length direction of hot-plate.
Horizontal direction and vertical direction that described hot-plate is deviating from crucible body side surface all have tapering.
In the horizontal direction, with the axis of hot-plate for benchmark, the tapering between central zone and end is 1 ° ~ 3 °; In vertical direction, the tapering between the bottom of hot-plate and top is with 1 ° ~ 3 °.Described hot-plate adopts graphite cake.
Advantage of the present invention: arrange at least two crucible bodies in body of heater, can once obtain at least two sapphire single-crystals by the cooperation of vacuum unit, heating unit, improves the output of crystal while improving growth velocity; Cuboid-type crystal is convenient to following process cutting, and energy efficient, reduces costs, safe and reliable.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the schematic diagram that heating unit of the present invention coordinates with single crystal growing mechanism.
Fig. 3 is the structural representation of hot-plate of the present invention.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the right view of Fig. 3.
Fig. 6 is thermal field vertical view of the present invention.
Description of reference numerals: separate slot and 20-plate hole under well heater, 17-hot-plate, the upper separate slot of 18-, 19-before 1-crucible body, 2-seed slot, 3-heat protection screen, 4-crystal growing chamber, 5-lower-left thermopair, 6-bottom right thermopair, 7-upper right thermopair, 8-body of heater, the right well heater of 9-, 10-vacuum unit, 11-upper left thermopair, the left well heater of 12-, 13-rear thermopair, 14-post-heater, 15-front thermopair, 16-.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 1, Figure 2 with shown in Fig. 6: in order to the production efficiency of crystal can be improved, energy efficient, reduce costs, the present invention includes body of heater 8 and be positioned at the vacuum unit 10 outside described body of heater 8; Be provided with heat protection screen 3 in described body of heater 8, be provided with single crystal growing crucible mechanism in described heat protection screen 3, described single crystal growing crucible mechanism comprises at least two crucible bodies 1, and the crucible body 1 in described single crystal growing crucible mechanism is separate.
Particularly, body of heater 8 can be made to be in vacuum state by vacuum unit 10, vacuum unit 10 can adopt existing conventional structure, specifically repeats no more.Heat protection screen 3 can adopt graphite to shield, and effectively can completely cut off single crystal growing crucible mechanism and extraneous heat exchange, guarantee the state of temperature of single crystal growing crucible mechanism in heat protection screen 3 by heat protection screen 3.Crucible body 1 in single crystal growing crucible mechanism is and column distribution in body of heater 8, the quantity of the crucible body 1 in body of heater 8 can be arranged as required, two sapphire single-crystals can be obtained by arranging at least two crucible bodies 1 in body of heater 8 simultaneously, thus improve the production efficiency of crystal, energy efficient, cuts down finished cost.
Described crucible body 1 comprises and is positioned at top and the rectangular cast of vertically distribution and be positioned at the wedge surface body of bottom, and be provided with seed slot 2 in the wedge surface body of crucible body 1, the tapering in described wedge surface portion is 80 ° ~ 110 °.Described crucible body 1 adopts molybdenum or miramint welding to make.
In the embodiment of the present invention, each crucible body 1 forms the crystal growing chamber 4 of a monocrystalline, and the rectangular cast of crucible body 1 is connected with wedge surface body, and seed slot 2 is also rectangle shape.
The heating unit being positioned at single crystal growing crucible mechanism outer ring is also provided with in described heat protection screen 3, described heating unit comprises the well heater being evenly distributed on crucible body 1 outer ring, described well heater provide in heat protection screen 3 a of a single crystal growing to, b to and c to three dimensional temperature gradient.
In the embodiment of the present invention, well heater can adopt resistive heating or induction heating, and the mode of heating is indirect heating crucible body 1, to obtain the temperature needed for growing sapphire monocrystalline in crucible body 1.Multiple crucible bodies 1 in body of heater 8 are column distribution also, well heater is positioned at the outer ring of all crucible bodies 1, well heater provides heat all around all crucible bodies 1, with make seed crystal in crucible body 1 a to, b to and c to growth, wherein, a to, b to and c to the length of three-dimensional and seeded growth, width and short transverse corresponding, known by the art personnel, repeat no more herein.
Described well heater comprises right well heater 9, left well heater 12, post-heater 14 and front well heater 16; Described right well heater 9 is positioned at the right side of heat protection screen 3, and left well heater 12 is positioned at the left side of heat protection screen 3, and post-heater 14 is positioned at the rear side of heat protection screen 3, and front well heater 16 is positioned at the front side of heat protection screen 3; Right well heater 9 is arranged the upper right thermopair 7 being used for detected temperatures, left well heater 12 is arranged the lower-left thermopair 11 being used for detected temperatures, post-heater 14 is arranged the rear thermopair 13 being used for detected temperatures, front well heater 16 is arranged the front thermopair 15 being used for detected temperatures.
In the embodiment of the present invention, top due to crucible body 1 is rectangular cast, seed slot 2 is also rectangle shape, therefore, four well heaters are set in heat protection screen 3, i.e. right well heater 9, left well heater 12, post-heater 14 and front well heater 16, so that each direction of guaranteeing crucible body 1 all can obtain heat.Thermopair is set on the heaters, can corresponding Heating temperature be detected by thermopair, the closed-loop control to well heater working order can be realized according to detected temperatures, to obtain the precise temp scope of seeded growth in body of heater 8.Usually, the temperature value of detection is outputted to outside by thermopair, is controlled, be specially known by the art personnel, repeat no more herein by the working order of outside to well heater and vacuum unit 10.In Fig. 1 and Fig. 2, front thermopair 15 comprises lower-left thermopair 6 and bottom right thermopair 5.
As shown in Fig. 3, Fig. 4 and Fig. 5, described well heater comprises hot-plate 17, described hot-plate 17 is arranged some equally distributed upper separate slots 18 and lower separate slot 19, described upper separate slot 18 and lower separate slot 19 are parallel distribution on hot-plate 17, and upper separate slot 18 and lower separate slot 19 are alternately distributed on the length direction of hot-plate 17.
In the embodiment of the present invention, right well heater 9, left well heater 12, post-heater 14 and front well heater 16 all adopt identical structure, namely all adopt hot-plate 17 to heat, and described hot-plate 17 adopts graphite cake.Upper separate slot 18, lower separate slot 19 extend internally from the both sides of hot-plate 17 respectively, and the length of upper separate slot 18, lower separate slot 19 is all less than the width of hot-plate 17, and hot-plate 17 obtains required heating circuit by upper separate slot 18, lower separate slot 19.The two ends of hot-plate 17 arrange plate hole 20, are fixed by the installation of plate hole 20 for hot-plate 17.
Horizontal direction and vertical direction that described hot-plate 17 is deviating from crucible body 1 side all have tapering.Wherein, in the horizontal direction, with the axis of hot-plate 17 for benchmark, the tapering between central zone and end is 1 ° ~ 3 °, reduces gradually to form the thin shape in thick middle both sides to make hot-plate 17 thickness in the horizontal direction; In vertical direction, the tapering between the bottom of hot-plate 17 and top is with 1 ° ~ 3 °, reduces gradually to form the thick thin shape in bottom above to make the thickness of hot-plate 17 in the vertical direction.In the embodiment of the present invention, hot-plate 17 arranges the structure obtaining not equal thickness by above-mentioned tapering at vertical direction, with formed c to thermograde, wherein, the scope of equal thickness is not between 44mm to 48mm; Not equal thickness setting principle: 1), ensure that c is to suitable thermograde; 2), ensure that the resistance of whole well heater is at 0.04 ohm.
To have the single crystal growing crucible mechanism of two crucible bodies 1, the process of Sapphire Crystal Growth is described.Use the wall thickness 3mm of two crucible bodies 1, length 300mm, width 100mm, height 100mm.The degree of depth of crucible seed slot 2 is 10mm, and width is 15mm, and length is 120mm.Two c are placed in the seed slot 2 of two crucibles to seed crystal, load high purity aluminium oxide (> 99.999wt%) raw material and put into crucible body 1, close bell, open vacuum unit 10.
When in body of heater 8, vacuum tightness reaches 2 × 10
-3after Pa, start heating unit to be warming up to 1400 DEG C, keep that constant temperature three is little again reaches 2 × 10 up to vacuum tightness
-3after Pa, continue heating direct to aluminum oxide to start to melt, with the position of tungsten tipped probe detection solid-liquid interface, controlling temperature rise rate makes seed portion melt, and after raw material all melts, declines with the speed of 0.15 DEG C/minute, until crystal growth terminates, progressively improving rate of temperature fall makes crystal be cooled to room temperature, takes out sapphire crystal, obtains two long 300mm, wide 100mm, sapphire crystal that high 100mm does not have the subsurface defects such as similar bubble, twin crystal, crackle completely.
Above embodiment is only for the present invention being described only, but not limitation of the present invention, person skilled in the relevant technique; without departing from the spirit and scope of the present invention; can also make various conversion or modification, therefore all equivalent technical schemes, all fall into protection scope of the present invention.
Claims (9)
1. the three-dimensional Sapphire Crystal Growth device of crucible more than, comprises body of heater (8) and is positioned at described body of heater (8) vacuum unit outward (10); It is characterized in that: in described body of heater (8), be provided with heat protection screen (3), described heat protection screen is provided with single crystal growing crucible mechanism in (3), described single crystal growing crucible mechanism comprises at least two crucible bodies (1), and the crucible body (1) in described single crystal growing crucible mechanism is separate.
2. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 1, it is characterized in that: described crucible body (1) comprises and is positioned at top and the rectangular cast of vertically distribution and be positioned at the wedge surface body of bottom, be provided with seed slot in the wedge surface body of crucible body (1), the tapering in described wedge surface portion is 80 ° ~ 110 °.
3. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 1, it is characterized in that: described heat protection screen is also provided with the heating unit being positioned at single crystal growing crucible mechanism outer ring in (3), described heating unit comprises the well heater being evenly distributed on crucible body (1) outer ring, described well heater provide in heat protection screen (3) a of a single crystal growing to, b to and c to three dimensional temperature gradient.
4. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 3, is characterized in that: described well heater comprises right well heater (9), left well heater (12), post-heater (14) and front well heater (16); Described right well heater (9) is positioned at the right side of heat protection screen (3), and left well heater (12) is positioned at the left side of heat protection screen (3), and post-heater (14) is positioned at the rear side of heat protection screen (3), and front well heater (16) is positioned at the front side of heat protection screen (3); Right well heater (9) is upper arranges the upper right thermopair (7) being used for detected temperatures, left well heater (12) is upper arranges the lower-left thermopair (11) being used for detected temperatures, post-heater (14) is upper arranges the rear thermopair (13) being used for detected temperatures, and front well heater (16) is upper arranges the front thermopair (15) being used for detected temperatures.
5. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 1, is characterized in that: described crucible body (1) adopts molybdenum or miramint welding to make.
6. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 3, it is characterized in that: described well heater comprises hot-plate (17), described hot-plate (17) is arranged some equally distributed upper separate slots (18) and lower separate slot (19), described upper separate slot (18) is upper in parallel distribution at hot-plate (17) with lower separate slot (19), and upper separate slot (18) and lower separate slot (19) are alternately distributed on the length direction of hot-plate (17).
7. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 6, is characterized in that: horizontal direction and vertical direction that described hot-plate (17) is deviating from crucible body (1) side all have tapering.
8. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 7, it is characterized in that: in the horizontal direction, with the axis of hot-plate (17) for benchmark, the tapering between central zone and end is 1 ° ~ 3 °; In vertical direction, the tapering between the bottom of hot-plate (17) and top is with 1 ° ~ 3 °.
9. the three-dimensional Sapphire Crystal Growth device of many crucibles according to claim 6, is characterized in that: described hot-plate (17) adopts graphite cake.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410677422.2A CN104357906A (en) | 2014-11-21 | 2014-11-21 | Multi-crucible three-dimensional sapphire single crystal growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410677422.2A CN104357906A (en) | 2014-11-21 | 2014-11-21 | Multi-crucible three-dimensional sapphire single crystal growing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104357906A true CN104357906A (en) | 2015-02-18 |
Family
ID=52525207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410677422.2A Pending CN104357906A (en) | 2014-11-21 | 2014-11-21 | Multi-crucible three-dimensional sapphire single crystal growing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104357906A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105369344A (en) * | 2015-12-15 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Method and device used for preparing platy monocrystals via temperature field gradient vertical shifting method |
| CN105696072A (en) * | 2016-04-12 | 2016-06-22 | 常州亿晶光电科技有限公司 | Sapphire crystal growth furnace |
| CN106435730A (en) * | 2016-09-08 | 2017-02-22 | 中国科学院上海光学精密机械研究所 | Growth equipment for preparation of magnesium fluoride crystals with multi-crucible descending method and growth method of magnesium fluoride crystals |
| CN110923802A (en) * | 2019-12-24 | 2020-03-27 | 西安交通大学 | Multi-crucible crystal growth furnace with independently-controllable stations and control method |
| CN111088520A (en) * | 2018-10-24 | 2020-05-01 | 蓝宝石科技株式会社 | Sapphire single crystal growth device and method |
| CN114481328A (en) * | 2020-10-26 | 2022-05-13 | 昆明物理研究所 | Preparation device and method of tellurium-zinc-cadmium seed crystal |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1974882A (en) * | 2006-11-20 | 2007-06-06 | 宁波大学 | Monocrystal growing furnace in multiple falling crucible method |
| CN101024898A (en) * | 2007-01-17 | 2007-08-29 | 上海晶生实业有限公司 | Blue-jewel-crystal multi-crucible melt growth technolgoy |
| CN200988869Y (en) * | 2006-12-29 | 2007-12-12 | 万尤宝 | Rotary crucible crystal growing system by temperature gradient method |
| CN200988868Y (en) * | 2006-09-07 | 2007-12-12 | 嘉兴学院 | Resistor heating vertical multiple crucible crystal falling method growing system |
| CN102828232A (en) * | 2012-09-25 | 2012-12-19 | 倪屹 | Three-dimensional sapphire crystal growing device |
| CN204281896U (en) * | 2014-11-21 | 2015-04-22 | 江南大学 | The three-dimensional Sapphire Crystal Growth device of many crucibles |
-
2014
- 2014-11-21 CN CN201410677422.2A patent/CN104357906A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200988868Y (en) * | 2006-09-07 | 2007-12-12 | 嘉兴学院 | Resistor heating vertical multiple crucible crystal falling method growing system |
| CN1974882A (en) * | 2006-11-20 | 2007-06-06 | 宁波大学 | Monocrystal growing furnace in multiple falling crucible method |
| CN200988869Y (en) * | 2006-12-29 | 2007-12-12 | 万尤宝 | Rotary crucible crystal growing system by temperature gradient method |
| CN101024898A (en) * | 2007-01-17 | 2007-08-29 | 上海晶生实业有限公司 | Blue-jewel-crystal multi-crucible melt growth technolgoy |
| CN102828232A (en) * | 2012-09-25 | 2012-12-19 | 倪屹 | Three-dimensional sapphire crystal growing device |
| CN204281896U (en) * | 2014-11-21 | 2015-04-22 | 江南大学 | The three-dimensional Sapphire Crystal Growth device of many crucibles |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105369344A (en) * | 2015-12-15 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Method and device used for preparing platy monocrystals via temperature field gradient vertical shifting method |
| CN105696072A (en) * | 2016-04-12 | 2016-06-22 | 常州亿晶光电科技有限公司 | Sapphire crystal growth furnace |
| CN106435730A (en) * | 2016-09-08 | 2017-02-22 | 中国科学院上海光学精密机械研究所 | Growth equipment for preparation of magnesium fluoride crystals with multi-crucible descending method and growth method of magnesium fluoride crystals |
| CN111088520A (en) * | 2018-10-24 | 2020-05-01 | 蓝宝石科技株式会社 | Sapphire single crystal growth device and method |
| CN110923802A (en) * | 2019-12-24 | 2020-03-27 | 西安交通大学 | Multi-crucible crystal growth furnace with independently-controllable stations and control method |
| CN114481328A (en) * | 2020-10-26 | 2022-05-13 | 昆明物理研究所 | Preparation device and method of tellurium-zinc-cadmium seed crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104357906A (en) | Multi-crucible three-dimensional sapphire single crystal growing device | |
| CN102877117B (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| CN102758249B (en) | A kind of preparation method of colourless boule monocrystal | |
| CN202558970U (en) | Single crystal like silicon ingot furnace | |
| CN104651934B (en) | A kind of energy-saving sapphire crystal growing furnace | |
| CN103103604B (en) | Large size C is to sapphire crystal manufacture method | |
| CN106591937B (en) | A kind of ingot melting crystallization processes of depressed class single crystal seed | |
| CN104651935B (en) | A kind of method that crucible rise method prepares high-quality sapphire crystal | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN102560630A (en) | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof | |
| CN105483825A (en) | Preparation method of bromine-lead-cesium single crystals | |
| CN203795018U (en) | Thermal field for producing sapphire single crystal by edge-defined film-fed crystal growth method | |
| CN110219046A (en) | A kind of visualization oriented growth device and growing method for large scale bromine lead caesium monocrystal | |
| CN105951169B (en) | A kind of big gradient visualization tubular type monocrystal growing furnace | |
| CN104250852A (en) | Sapphire crystal growth device and growth method | |
| CN204281896U (en) | The three-dimensional Sapphire Crystal Growth device of many crucibles | |
| CN202744653U (en) | Graphite crucible for preparing single crystal silicon by adopting Czochralski method | |
| CN104264213A (en) | EFG (edge-defined film-fed growth) device of large-size doped sapphire crystals and growth process thereof | |
| CN102433585B (en) | Thermal field structure of quasi-monocrystal ingot furnace | |
| CN102912430B (en) | Sapphire crystal growth equipment and method | |
| CN206666673U (en) | A kind of multistation crucible declines stove | |
| CN202558965U (en) | Furnace body of kyropoulos method growth furnace | |
| CN105177711A (en) | Sapphire crystal growing furnace heat field, crystal growing furnace with heat field and crystal growing process of crystal growing furnace | |
| CN202591206U (en) | Glass phase material hardening and crushing recovery device | |
| CN207130360U (en) | A kind of heater |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150218 |
|
| RJ01 | Rejection of invention patent application after publication |