CN207294938U - The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace - Google Patents
The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN207294938U CN207294938U CN201721246704.2U CN201721246704U CN207294938U CN 207294938 U CN207294938 U CN 207294938U CN 201721246704 U CN201721246704 U CN 201721246704U CN 207294938 U CN207294938 U CN 207294938U
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Abstract
The utility model discloses a kind of combination heater of polycrystalline silicon ingot or purifying furnace, including stent, top heater, side heater and graphite electrode component；Side heater includes the multiple sidepiece heating modules being arranged in side face, and each side of stent sets a sidepiece heating module, and each sidepiece heating module is composed of multiple heat-generating units；Each sidepiece heated mould heat-generating units in the block are divided into some groups of heating components from top to bottom；The total resistance value of heating component of the sidepiece heating module on sustained height is identical, and the total resistance value of each heating component in same sidepiece heating module is in ascending distribution from top to bottom.Combination heater can in the vertical direction form stable temperature gradient, and the control of the temperature gradient is more convenient and accurate.A kind of polycrystalline silicon ingot or purifying furnace is also disclosed in the utility model, which obtains preferable temperature distribution gradients under the action of combination heater, so as to obtain the silicon ingot of higher quality.
Description
Technical field
It the utility model is related to a kind of polysilicon ingot casting equipment, and in particular to a kind of Combined type heating of polycrystalline silicon ingot or purifying furnace
Device and the polycrystalline silicon ingot or purifying furnace comprising the heater.
Background technology
At present, solar cell (group) is mostly polysilicon solar cell, wherein, crystalline silicon material is most important photovoltaic
Material, and crystalline silicon material is also still the mainstay material of solar cell in the quite a long time from now on.Usually
In the case of, the equipment for manufacturing more silicon wafers is ingot furnace, and existing polycrystalline silicon ingot or purifying furnace mainly by furnace body, heat-insulation cage, crucible, plus
The structures such as hot device and heat exchange platform are formed.
The operation principle of existing polycrystalline silicon ingot or purifying furnace is：After silicon materials are heated to molten condition, by heat-insulation cage from it is lower to
Upper opening, since crucible is arranged on heat exchange platform, the bottom of crucible cools down first, and silicon liquid forms nucleus simultaneously at the position
Start long crystalline substance, since heat-insulation cage moves from bottom to top, in the vertical direction forms lower part low temperature, the Temperature Distribution of upper pyrometer,
So that long crystal boundary face (thermoisopleth) gradually moves up from lower, crystal is allowed to grow from bottom to top.It is well known that long chip to crystalline substance
The quality of body is closely bound up, if wanting to manufacture high-purity polycrystalline silicon, it is important to ensure vertical direction temperature gradient and radially long crystalline substance
Interface levelness, that is, allow crystal vertically to be grown up under.
In existing polycrystalline silicon ingot or purifying furnace, heater generally includes top heater and lateral heater, each in order to allow
Position thermally equivalent, heating amount of the heater in its thermal radiation range is uniform, such as application publication number is
" the graphite heater and polycrystalline silicon ingot casting of polycrystalline silicon ingot or purifying furnace disclosed in the utility application text of CN106757338A
Stove ", Authorization Notice No. are " polycrystalline silicon ingot or purifying furnace " etc. disclosed in the utility model patent of CN103541003B, this polysilicon casting
Before crystallization, lateral temperature is uniform to the silicon liquid of ingot stove, during long crystalline substance, it is necessary to pass through the speed lifted to heat-insulation cage
Degree is reasonably controlled, and could be obtained the temperature gradient of preferable vertical direction, be allowed long crystal boundary face flatly to give birth to from bottom to top
It is long, but be difficult to accurately coordinate between the opening process of heat-insulation cage and optimal long brilliant process, can exist in actual production
Following deficiency：1st, the translational speed of long crystal boundary upwardly is difficult to be precisely controlled, will if the lifting speed of heat-insulation cage is excessively slow
Cause that the movement of long crystal boundary upwardly is slow, and efficiency is low, and influences crystal quality, if the lifting speed of heat-insulation cage is too fast, top
Silicon liquid faster cooled down than the silicon liquid of lower section, cannot ensure that long crystal boundary face is grown from bottom to top, seriously affect crystal quality；2、
The lifting speed of heat-insulation cage is slower, influences production efficiency.
Utility model content
The utility model aim is to overcome the deficiencies of the prior art and provide a kind of Combined type heating of polycrystalline silicon ingot or purifying furnace
Device, the heater enable to ingot furnace in the vertical direction to form stable temperature gradient, utilize natural vertical temperature point
Cloth promotes crystal growth, improves the long brilliant efficiency of more silicon wafers and the purity of crystal.
The purpose of this utility model is achieved through the following technical solutions：
A kind of combination heater of polycrystalline silicon ingot or purifying furnace, including stent, be arranged on the top heater of cantilever tip, set
In the lateral side heater of stent and graphite electrode component；It is characterized in that, the side heater includes being arranged on branch
Multiple sidepiece heating modules on frame side, each side of stent set a sidepiece heating module, and each sidepiece adds
Thermal modules are composed of multiple heat-generating units；Each sidepiece heated mould heat-generating units in the block are divided into some groups and add from top to bottom
Hot component；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, same sidepiece heating module
In the total resistance value of each heating component be in ascending distribution from top to bottom.
The operation principle of the combination heater of above-mentioned polycrystalline silicon ingot or purifying furnace is：
The resistance value of heat-generating units, size, shape can make different specifications in the utility model, form heat-generating units
Wait to select in storehouse；Since the total resistance value of each heating component in same sidepiece heating module is in ascending point from top to bottom
Cloth, and the total resistance value of heating component of all sidepiece heating modules on sustained height is identical, therefore heated to silicon raw material
After melting, the temperature on the outside of silicon liquid is distributed in ascending rule from top to bottom, and the handing-over of two adjacent groups heating component
At position, by the heat exchange of local location, temperature is not in great-jump-forward change, and can form nature transition so that silicon liquid
Temperature uniformly rises the temperature in outside from top to bottom；So in crystallization, heat-insulation cage can be disposably opened, allowed on the outside of silicon liquid
There is identical radiating condition from top to bottom, since the temperature of lower part is low, rapid heat dissipation, silicon liquid is long brilliant since bottom, with
The passage of time, crystallization temperature line gradually move up so that long crystal boundary face moving vertically upward progressively, due to the temperature of silicon liquid surrounding
It is consistent to spend environment, therefore long crystal boundary face can remain horizontality, so as to obtain the uniform Gao Pin grown vertically upward
Matter polysilicon.
One preferred solution of the utility model, wherein, the graphite electrode component includes what is be connected with top heater
First graphite electrode group and the second graphite electrode group being connected with side heater；The first graphite electrode group and the second stone
Electrode ink group is connected with the first three phase mains and the second three phase mains respectively.Added by three phase mains to top heater and sidepiece
Hot device power supply so that the used time is shorter than DC power supply on identical heating power is conveyed, it is possible to increase efficiency, at the same time
Stable voltage is capable of providing, ensures that heat-generating units being capable of consistent heat generation；Further, since top heater and side heater connect
It is connected on different three phase mains, by controlling the voltage ratio of two three phase mains, so as to change top heater and side
The power ratio of portion's heater, so as to be more advantageous to obtaining the temperature gradient needed.
One preferred solution of the utility model, wherein, when the heat-generating units in the heating component are multiple, these
Heat-generating units are vertically or/and arranged radially.So can be using the total resistance value of every group of heating component as target, according to heating
Component vertical direction height and combine installation space, flexibly select the heat-generating units of appropriate resistance and size to carry out group
Close.
One preferred solution of the utility model, wherein, the heat-generating units include snakelike heat-generating units and tabular
Heat-generating units.The heat-generating units of serpentine configuration are conducive to save material, and are conducive to radiate in follow-up radiation processes,
It can be conducive to allow the position to accelerate to dissipate during subsequent thermal dissipation by specially setting snakelike heat-generating units in diverse location
Heat, so as to be more advantageous to obtaining the Temperature Distribution needed；And the heat-generating units of tabular then radially and vertically can well with
Snakelike heat-generating units are combined collocation.
One preferred solution of the utility model, wherein, the stent includes four connecting plates, during each connecting plate includes
Between portion and be connected between two connecting portions of portion both sides；Two connecting portions in each connecting plate respectively with two neighboring side
One end connection of portion's heated mould heat-generating units in the block；All heat-generating units are connected to form square by four connecting plates
Shape mount structure.The stent form of this rectangular configuration is not only fixed easy to the installation of heating unit, simplifies the structure of heating unit,
And be also beneficial to ensure that each side of stent has consistent heating condition and Temperature Distribution, it will not go out in a circumferential direction
The difference of existing Temperature Distribution.
One preferred solution of the utility model, wherein, be equipped with each connecting portion it is multiple vertically arrange be used for
The mounting hole being connected with heat-generating units；The both ends of each heat-generating units are equipped with the mounting hole coordinated with the mounting hole；It is described
Heat-generating units are bolted on the connecting portion of connecting plate.This preferred solution is advantageous in that the installation for facilitating heat-generating units
And dismounting, and since mounting hole vertically arranges, so as to neatly regulation heating unit in the fixed bit of vertical direction
Put, the fixation of the heat-generating units of different dimensions can also be adapted to, versatility is good, and the flexible of heat-generating units is better achieved
Combination.
One preferred solution of the utility model, wherein, the top heater includes five snakelike heat-generating units in top
And for by the connection of the snakelike heat-generating units in each top it is fixed together be fixedly connected with block.Top by setting snakelike shape adds
Hot device, can save material, easy to process and subsequent thermal dissipation；In addition, the snakelike heat-generating units in top are connected by being fixedly connected with block
Fixation is connect, is conducive to the installation and removal of the snakelike heat-generating units in top.
One preferred solution of the utility model, wherein, the first graphite electrode group includes three the first graphite electrodes,
And it is evenly provided on the snakelike heat-generating units in top；Three first graphite electrodes are by five snakelike fevers in top
Unit is bisected into the equal top heating block of three resistance values；Three first graphite electrodes respectively with the first three phase mains
U, V, W phase are connected.This preferred solution be advantageous in that enable top heater the snakelike heat-generating units in top obtain it is identical
Voltage, so as to obtain uniform thermal field in top heater.
One preferred solution of the utility model, wherein, the second graphite electrode group has three, and the sidepiece is added
Heating component on hot device is divided into the identical three parts of resistance value in a circumferential direction；In heating component with second stone
Electrode ink corresponding position be equipped be used to connecting the second graphite electrode and heating component be conductively connected component, the connecting plate is by conduction
Material is made；The horizontal stroke for being conductively connected component and including the riser that is fixed in heating component and being arranged on riser upper end
Plate, second graphite electrode are arranged on transverse slat；Three second graphite electrodes U, V, W with the second three phase mains respectively
Mutually it is connected.By setting three electrodes, not only matched with three phase mains, and these three electrodes in a circumferential direction will heating
Component is divided into the identical three parts of resistance value so that the caloric value at each position of circumferencial direction is uniform so that in heater
Uniform heat is obtained, the thermoisopleth stablized and moved up is obtained when being conducive to crystallization.
The utility model also proposes a kind of polycrystalline silicon ingot or purifying furnace, including furnace body, heater, crucible and thermal insulation layer, it is special
Sign is that the heater is a kind of above-mentioned combination heater of polycrystalline silicon ingot or purifying furnace.
The utility model has the advantages that compared with prior art：
1st, there is the heat-generating units spread configuration, or select resistance value identical from bottom to top of different resistance values by selecting
But the different heat-generating units of quantity spread configuration from bottom to top, it is possible to the heating component with different resistance values is obtained, so that
In the vertical direction can form preferable temperature gradient after crystallisation by cooling is carried out to silicon liquid, and this temperature gradient is to crystal
There is power back-off so that the control of temperature is more convenient and accurate, so as to avoid excessively dependence control heat-insulated
The translational speed of cage realizes temperature control, and more efficient, the crystal quality of acquisition is more preferable.
2nd, the selection of heat-generating units is flexible and changeable, and not only the resistance value of heat-generating units can be arranged to different specifications, and
And shape, size can also be arranged to that different specifications is selective, and heat-generating units are also flexible in the installation site of vertical direction
It is changeable, it is more advantageous to obtaining preferable temperature distribution gradients, and then obtain the polycrystal of higher quality.
3rd, by increasing or decreasing the heat-generating units of certain resistance value in specific position, can obtain specific modality etc.
Warm line, to obtain the crystal of certain quality.For example, optimal long crystal boundary face is horizontality, but can not be kept away in silicon raw material
Exempt from there are some impurity, partial impurities can be removed after high-temperature heating melts in a manner of volatilization, but partial impurities are not
It can melt, be mingled in silicon liquid, these impurity are fixedly arranged at crystals during long crystalline substance, so as to influence the purity of crystal；For
These impurity are excluded, can allow the middle part in long crystal boundary face raised slightly upward, surrounding tilts down that (this middle part is slightly upward
Long brilliant speed of the raised long crystal boundary in face of long brilliant direction and each position will not cause materially affect), so in long brilliant mistake
Cheng Zhong, impurity will flow away around on long crystal boundary face, these final impurity may build up the top layer or edge of silicon ingot
Part, easily can remove these impurity so in follow-up process；In order to obtain this middle part gently towards
Upper raised long crystal boundary face, it is desirable to which on the cross section of silicon liquid, middle temperature outline is less than the temperature of surrounding, in this practicality
In new, on the basis of the heat-generating units assembled scheme with horizontal long brilliant section, the heating component in bottom can be passed through
The more heat-generating units of upper increase, or the resistance value bigger heat-generating units of any are selected in the heating component of bottom, so that it may
In the starting stage of crystallization, to allow the temperature of silicon liquid bottom periphery, than more slightly higher under normal circumstances, such silicon liquid is in crystallization
Starting stage, middle silicon liquid can be prior to the first crystallizations on periphery, so in the starting stage with regard to slightly upward protrusion in the middle part of being formed
Long crystal boundary face, follow-up long brilliant process will keep this state to carry out, be more advantageous to obtaining the crystal of purity higher.
Brief description of the drawings
Fig. 1 is a kind of dimensional structure diagram of the combination heater of polycrystalline silicon ingot or purifying furnace of the utility model.
Fig. 2 is the top view of the top heater and the first graphite electrode in Fig. 1.
Fig. 3 is the dimensional structure diagram of connecting plate in Fig. 1.
Fig. 4 is the dimensional structure diagram for being conductively connected component in Fig. 1.
Fig. 5 is the dimensional structure diagram of the snakelike heat-generating units in a kind of embodiment of the utility model.
Fig. 6 is the dimensional structure diagram of the large size heat-generating units in a kind of embodiment of the utility model.
Fig. 7 is the dimensional structure diagram of the small size heat-generating units in a kind of embodiment of the utility model.
Fig. 8 is that the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of the first combination of heat-generating units is shown
It is intended to.
Fig. 9 is that the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of second of combination of heat-generating units is shown
It is intended to.
Figure 10 is the stereochemical structure of the combination heater of the polycrystalline silicon ingot or purifying furnace of the third combination of heat-generating units
Schematic diagram.
Figure 11 is the diagrammatic cross-section in the long crystal boundary face of the horizontality in polycrystalline silicon ingot or purifying furnace.
Figure 12 is long crystal boundary face and the diagrammatic cross-section of impurity discharge of the upward dimpling in middle part in polycrystalline silicon ingot or purifying furnace.
Embodiment
The utility model is further described with reference to embodiment and attached drawing, but the embodiment of the utility model is not
It is only limitted to this.
Referring to Fig. 1-Fig. 4, a kind of combination heater of polycrystalline silicon ingot or purifying furnace of the present embodiment, including stent, be arranged on
The top heater 5 of cantilever tip, be located at stent lateral side heater 2 and graphite electrode component；The sidepiece heating
Device 2 includes the multiple sidepiece heating modules being arranged in side face, and each side of stent sets a sidepiece heating module,
Each sidepiece heating module is composed of multiple heat-generating units；Each sidepiece heated mould heat-generating units in the block from it is lower to
On be divided into some groups of heating components；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, together
The total resistance value of each heating component in one sidepiece heating module is in ascending distribution from top to bottom.
Referring to Fig. 1, the graphite electrode component include 4 groups of the first graphite electrode being connected with top heater 5 and with
3 groups of the second graphite electrode that side heater 2 connects；3 groups of 4 groups of first graphite electrode and the second graphite electrode are respectively with
One three phase mains and the connection of the second three phase mains.Powered by three phase mains to top heater 5 and side heater 2 so that
The used time is shorter than DC power supply on identical heating power is conveyed, it is possible to increase efficiency, while it is capable of providing stabilization
Voltage, ensure heat-generating units being capable of consistent heat generation；Further, since top heater 5 and side heater 2 be connected to it is different
On three phase mains, by controlling the voltage ratio of two three phase mains, so as to change top heater 5 and side heater 2
Power ratio so that be more advantageous to obtain need temperature gradient.
Referring to Fig. 1, when the heat-generating units in the heating component for it is multiple when, these heat-generating units are vertically or/and footpath
To arrangement.So can using the total resistance value of every group of heating component as target, according to heating component vertical direction height
And installation space is combined, flexibly select the heat-generating units of appropriate resistance and size to be combined.
Referring to Fig. 1, the heat-generating units include the heat-generating units of snakelike heat-generating units and tabular.The hair of serpentine configuration
Hot cell is conducive to save material, and is conducive to radiate in follow-up radiation processes, can by diverse location specially
Snakelike heat-generating units are set, are conducive to allow the position to accelerate heat dissipation during subsequent thermal dissipation, so as to be more advantageous to being needed
The Temperature Distribution wanted；And the heat-generating units of tabular then can be combined with snakelike heat-generating units well radially and vertically
Collocation.
Referring to Fig. 1 and Fig. 3, the stent includes four connecting plates 1, and each connecting plate 1 includes pars intermedia 1-1 and connection
Two connecting portion 1-2 in pars intermedia 1-1 both sides；Two connecting portion 1-2 in each connecting plate 1 respectively with two neighboring sidepiece
One end connection of heated mould heat-generating units in the block；All heat-generating units are connected to form square by four connecting plates 1
Shape mount structure.The stent form of this rectangular configuration is not only fixed easy to the installation of heating unit, simplifies the structure of heating unit,
And be also beneficial to ensure that each side of stent has consistent heating condition and Temperature Distribution, it will not go out in a circumferential direction
The difference of existing Temperature Distribution.
Referring to Fig. 3, be equipped with each connecting portion 1-2 it is multiple vertically arrange for the installation that is connected with heat-generating units
Hole 1-21；The both ends of each heat-generating units are equipped with the mounting hole coordinated with the mounting hole 1-21；The heat-generating units pass through
It is bolted on the connecting portion 1-2 of connecting plate 1.The advantages of this arrangement are as follows facilitate the installation and removal of heat-generating units, and
And since mounting hole 1-21 is vertically arranged, so as to neatly regulation heating unit in the fixed position of vertical direction,
The fixation of the heat-generating units of different dimensions is adapted to, versatility is good, and the flexible combination of heat-generating units is better achieved.
Referring to Fig. 2, the top heater 5 includes five snakelike heat-generating units 5-1 in top and for will each top
Snakelike heat-generating units 5-1 connections it is fixed together be fixedly connected with block 5-2.By the top heater 5, Neng Goujie for setting snakelike shape
Material saving, easy to process and subsequent thermal dissipation；It is in addition, by being fixedly connected with block 5-2 that the snakelike heat-generating units 5-1 connections in top is solid
It is fixed, be conducive to the installation and removal of the snakelike heat-generating units 5-1 in top.
Referring to Fig. 1 and Fig. 2,4 groups of first graphite electrode includes three the first graphite electrodes 4, and equably sets
On the snakelike heat-generating units 5-1 in top；Three first graphite electrodes 4 put down five snakelike heat-generating units 5-1 in top
It is divided into the equal top heating block of three resistance values；Three first graphite electrodes 4 U, V, W with the first three phase mains respectively
It is connected.This preferred solution be advantageous in that enable top heater 5 the snakelike heat-generating units 5-1 in top obtain it is identical
Voltage, so as to obtain uniform thermal field in top heater 5.
Referring to Fig. 1 and Fig. 4,3 groups of second graphite electrode has three, and by the heating group on the side heater 2
Part is divided into the identical three parts of resistance value in a circumferential direction；In heating component with 3 corresponding position of the second graphite electrode
Equipped with component 6 is conductively connected for connect the second graphite electrode 3 and heating component, the connecting plate 1 is made of an electrically conducting material；
The transverse slat for being conductively connected component 6 and including the riser 6-1 that is fixed in heating component and being arranged on riser 6-1 upper ends
6-2, second graphite electrode 3 are arranged on transverse slat 6-2；Three second graphite electrodes 3 respectively with the second three phase mains
U, V, W phase be connected.By setting three electrodes, not only matched with three phase mains, and these three electrodes are in circumferencial direction
On heating component is divided into the identical three parts of resistance value so that the caloric value at each position of circumferencial direction is uniform so that
Uniform heat is obtained in heater, the thermoisopleth stablized and moved up is obtained when being conducive to crystallization.
A kind of operation principle of the combination heater of polycrystalline silicon ingot or purifying furnace of the present embodiment is：
Resistance value, size, the shape of the heat-generating units can make different specifications, and it is to be selected to form heat-generating units storehouse
With；Since the total resistance value of each heating component in same sidepiece heating module is in ascending distribution from top to bottom, and institute
Have that the total resistance value of heating component of the sidepiece heating module on sustained height is identical, therefore after to silicon raw material heating melting,
The temperature in the outside of silicon liquid 10 is distributed in ascending rule from top to bottom, and the delivery position of two adjacent groups heating component
Place, by the heat exchange of local location, temperature is not in great-jump-forward change, and can form nature transition so that outside silicon liquid 10
Temperature uniformly rises the temperature of side from top to bottom；So in crystallization, heat-insulation cage can be disposably opened, allow the outside of silicon liquid 10
There is identical radiating condition from top to bottom, since the temperature of lower part is low, rapid heat dissipation, silicon liquid 10 is long brilliant since bottom, with
The passage of time, crystallization temperature line gradually moves up so that long crystal boundary face 11 moving vertically upward progressively, due to silicon liquid 10 4
The temperature environment in week is consistent, therefore long crystal boundary face 11 can remain horizontality, uniformly be given birth to vertically upward so as to obtain
Long high-quality polysilicon.
Referring to Fig. 8-Figure 10, the combination heater of the polycrystalline silicon ingot or purifying furnace in the present embodiment comes in fact with multiple combinations mode
Temperature gradient on existing vertical direction, to embody this feature of the utility model, enumerates example below：
Wherein, the heat-generating units storehouse includes small size tabular heat-generating units, large size tabular heat-generating units and snakelike fever
Unit 7, in addition, the resistance value of above-mentioned three kinds of heat-generating units is sequentially increased；
(1) it is made of, is located at a small size tabular heat-generating units 8 positioned at minimum heating component in sidepiece heating module
Middle heating component is made of a large size tabular heating unit, positioned at highest heating component by a snakelike heat-generating units
7 compositions；(as shown in Figure 8)
(2) it is made of, is located at two small size tabular heat-generating units 8 positioned at minimum heating component in sidepiece heating module
Middle heating component is made of large size tabular heat-generating units 9, positioned at highest heating component by two snakelike 7 groups of heat-generating units
Into；(as shown in Figure 9)
(3) heating component among sidepiece heating module middle position is made of two small size tabular heat-generating units 8, positioned at most
High heating group valency is by the small size tabular heat-generating units 8 of large size tabular heat-generating units 9, one and a snakelike heat-generating units
7 compositions, heat-generating units are not provided with lowest point.(as described in Figure 10)
The combination heater of the polycrystalline silicon ingot or purifying furnace of the utility model also has various combinations in real work
Mode, heat-generating units storehouse is more than only three kinds of heat-generating units；It is finally formed by the combination of different heat-generating units
Stable temperature gradient, and the temperature of vertical direction is to heat up from the bottom to top all the time, so as to improve crystallization rate and separate out crystal
Purity.
Referring to Figure 11-Figure 12, in addition, the combination of heat-generating units can also be adjusted according to the actual conditions of crystallization.Example
Such as, optimal long crystal boundary face 11 is horizontality (as shown in figure 11), however, cleaning separates out the impurity after crystal for convenience
14, the middle part in long crystal boundary face 11 can be allowed raised slightly upward, surrounding tilts down (the slightly upward raised long crystalline substance in this middle part
Interface 11 will not cause materially affect to the long brilliant speed at long brilliant direction and each position), impurity 14 is allowed in long crystal boundary face 11
On flow away around, be gathered in the top layer of crystal；At this time, worker can separately add one in the lowermost layer of sidepiece heating module and add
Heat-generating units 13 (or selecting the slightly larger heat-generating units of a resistance value), the so starting stage in crystallization, can allow silicon liquid 10
The temperature of bottom periphery will cause the middle meeting of silicon liquid 10 prior to the first crystallization on periphery than more slightly higher under normal circumstances, so that
So that slightly upward raised long crystal boundary face 11, follow-up length in the middle part of just being formed in the starting stage in polycrystalline silicon ingot or purifying furnace 12
Brilliant process will keep this state to carry out, and be more advantageous to obtaining the crystal of purity higher.
Above-mentioned is the preferable embodiment of the utility model, but the embodiment of the utility model and from the above
Limitation, other any Spirit Essences without departing from the utility model with made under principle change, modification, replacement, combine, letter
Change, should be equivalent substitute mode, be included within the scope of protection of the utility model.
Claims (10)
1. a kind of combination heater of polycrystalline silicon ingot or purifying furnace, including stent, it is arranged on the top heater of cantilever tip, is located at
The lateral side heater of stent and graphite electrode component；It is characterized in that, the side heater includes being arranged on stent
Multiple sidepiece heating modules on side, each side of stent set a sidepiece heating module, each sidepiece heating
Module is composed of multiple heat-generating units；Each sidepiece heated mould heat-generating units in the block are divided into some groups of heating from top to bottom
Component；The total resistance value of heating component of all sidepiece heating modules on sustained height is identical, in same sidepiece heating module
The total resistance value of each heating component be in ascending distribution from top to bottom.
A kind of 2. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the graphite electricity
Pole component includes the first graphite electrode group being connected with top heater and the second graphite electrode being connected with side heater
Group；The first graphite electrode group and the second graphite electrode group are connected with the first three phase mains and the second three phase mains respectively.
3. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that when the heating
Heat-generating units in component for it is multiple when, these heat-generating units are vertically or/and arranged radially.
4. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the fever is single
Member includes the heat-generating units of snakelike heat-generating units and tabular.
A kind of 5. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the stent bag
Four connecting plates are included, each connecting plate includes pars intermedia and two connecting portions for being connected between portion both sides；Each connecting plate
In one end respectively with two neighboring sidepiece heated mould heat-generating units in the block of two connecting portions be connected；Four connecting plates
All heat-generating units are connected to form rectangular frame structure.
A kind of 6. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 5, it is characterised in that each connecting portion
On be equipped with it is multiple vertically arrange for the mounting hole that is connected with heat-generating units；The both ends of each heat-generating units be equipped with
The mounting hole that the mounting hole coordinates；The heat-generating units are bolted on the connecting portion of connecting plate.
7. the combination heater of a kind of polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the top adds
Hot device includes the snakelike heat-generating units in five tops and for the snakelike heat-generating units in each top to be connected fixed fixation together
Contiguous block.
A kind of 8. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 7, it is characterised in that first stone
Electrode ink group includes three the first graphite electrodes, and is evenly provided on the snakelike heat-generating units in top；Three described first
Five snakelike heat-generating units in top are bisected into the equal top heating block of three resistance values by graphite electrode；Three described
One graphite electrode is connected with U, V, W phase of the first three phase mains respectively.
A kind of 9. combination heater of polycrystalline silicon ingot or purifying furnace according to claim 5, it is characterised in that second stone
Electrode ink group has three, and the heating component on the side heater is divided into identical three of resistance value in a circumferential direction
Part；It is equipped with heating component with the second graphite electrode corresponding position and is used to connect the second graphite electrode and heating component
Component is conductively connected, the connecting plate is made of an electrically conducting material；The component that is conductively connected includes being fixed on heating component
On riser and be arranged on the transverse slat of riser upper end, second graphite electrode is arranged on transverse slat；Three second stones
Electrode ink is connected with U, V, W phase of the second three phase mains respectively.
10. a kind of polycrystalline silicon ingot or purifying furnace, including furnace body, heater, crucible and thermal insulation layer, it is characterised in that the heater
For a kind of combination heater of polycrystalline silicon ingot or purifying furnace of claim 1-9 any one of them.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
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