CN202717880U - Novel polysilicon ingot casting furnace thermal field structure - Google Patents
Novel polysilicon ingot casting furnace thermal field structure Download PDFInfo
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- CN202717880U CN202717880U CN 201220381777 CN201220381777U CN202717880U CN 202717880 U CN202717880 U CN 202717880U CN 201220381777 CN201220381777 CN 201220381777 CN 201220381777 U CN201220381777 U CN 201220381777U CN 202717880 U CN202717880 U CN 202717880U
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Abstract
The utility model discloses a novel polysilicon ingot casting furnace thermal field structure which comprises an upper furnace cylinder and a lower furnace cylinder, and the upper furnace cylinder and the lower furnace cylinder are connected to form a metal cavity; a crucible with 650-kilogram capacity is arranged in the metal cavity, graphite heat dissipation blocks are arranged at the bottom of the crucible, heat preservation felt is arranged under the graphite heat dissipation blocks, the crucible is supported by a plurality of graphite support pillars, and a top heater and a side heater use high purity isostatic pressing graphite as electrodes and are respectively arranged on the top portion and the outer side of the crucible; a top heat preservation layer is arranged above the top heater, and a movable heat preservation layer is arranged on the outer side of the side heater and provided with a hanging rod which is connected to the upper furnace cylinder. The movable heat preservation layer, the top heat preservation layer and the bottom heat preservation felt can effectively maintain internal heat, and reduce heat loss, at the same time, capacity of the crucible is increased, under the condition that energy consumption is not increased, yield is improved, and cost and pollution are indirectly reduced.
Description
Technical field
The utility model relates to a kind of Novel polycrystalline silicon ingot furnace thermal field structure, belongs to the polycrystalline silicon ingot or purifying furnace technical field.
Background technology
Current, crystalline silicon material (comprising polysilicon and silicon single crystal) is topmost photovoltaic material, and its share of market is more than 90%, and also still is the main flow material of solar cell in one quite long from now on period.
Polycrystalline silicon ingot or purifying furnace is mainly used in the large production of solar-grade polysilicon ingot, adopts the polysilicon directional freezing technology, will tie by the directed condensation of special process after the silicon material high-temperature fusion, thereby reach the requirement that manufacture of solar cells is used the polysilicon quality.The production capacity of present polycrystalline silicon ingot or purifying furnace mostly is greatly the 480kg/ stove, and yield rate is 68%, and yield rate is low and cost is high, and the environmental pollution that causes simultaneously is serious, and energy consumption is large, is unfavorable for the Sustainable development of enterprise.
The utility model content
The utility model relates to a kind of Novel polycrystalline silicon ingot furnace thermal field structure, in order to improve the output of each stove, reduces cost and boosts productivity, and save energy reduces to be polluted.
For realizing this purpose, the method that the utility model adopts is: a kind of Novel polycrystalline silicon ingot furnace thermal field structure, comprise upper furnace tube and lower stove cylinder, upper furnace tube and lower stove cylinder are connected to form metallic cavity, be provided with crucible in the metallic cavity, crucible bottom is provided with the graphite radiating piece, graphite radiating piece below is provided with insulation quilt, crucible bottom is supported by many graphite pillar stiffeners, the crucible top is provided with top heater, the crucible outside is provided with side heater, and the top heater top is provided with the top thermal insulation layer, and the side heater outside is provided with the moving thermal insulation layer.
Described moving thermal insulation layer is provided with suspension rod and is connected on the upper furnace tube.
What described top heater and side heater adopted is Graphite Electrodes, is connected with copper electrode on the Graphite Electrodes.
What described Graphite Electrodes adopted is high-purity isostatic pressing formed graphite material.
The polysilicon capacity of described crucible is 650kg.
Its beneficial effect is: moving thermal insulation layer, top thermal insulation layer and insulation quilt can be kept internal heat effectively, reduce heat loss, and the crucible capacity increases simultaneously, has improved productive rate in the situation that does not increase energy consumption, the pollution that indirectly reduced cost reduction.
Description of drawings
The utility model will illustrate by example and with reference to the mode of accompanying drawing, wherein:
Fig. 1 is the utility model sectional view.
Embodiment
Disclosed all features in this specification sheets, or the step in disclosed all methods or the process except mutually exclusive feature and/or step, all can make up by any way.
Disclosed arbitrary feature in this specification sheets (comprising any accessory claim, summary and accompanying drawing) is unless special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is, unless special narration, each feature is an example in a series of equivalences or the similar characteristics.
As shown in Figure 1, a kind of Novel polycrystalline silicon ingot furnace thermal field structure comprises upper furnace tube 1 and lower stove cylinder 5, and upper furnace tube 1 and lower stove cylinder 5 are connected to form metallic cavity.Be provided with crucible 3 in the metallic cavity, the polysilicon capacity of crucible 3 is 650kg, and crucible 3 bottoms are provided with graphite radiating piece 4, and graphite radiating piece 4 belows are provided with insulation quilt 7, and crucible 3 bottoms are supported by many graphite pillar stiffeners 6.Crucible 3 tops are provided with top heater 11, and crucible 3 outsides are provided with side heater 8, and what top heater 11 and side heater 8 adopted is Graphite Electrodes 2, and what Graphite Electrodes 2 adopted is high-purity isostatic pressing formed graphite, is connected with copper electrode 13 on the Graphite Electrodes 2.Top heater 11 tops are provided with top thermal insulation layer 10, and side heater 8 outsides are provided with moving thermal insulation layer 9, and moving thermal insulation layer 9 is provided with suspension rod 12 and is connected on the upper furnace tube 1.
Production Flow Chart below in conjunction with polycrystalline silicon ingot casting is described further the utility model:
650kg silicon material is packed in the crucible 3, and moving thermal insulation layer 9 drops to the bottom, closes up with insulation quilt 7, and side heater 8 and top heater 11 heating are until the silicon material dissolves fully.Then slowly promote by time variable control moving thermal insulation layer 9, outwards dispel the heat by graphite radiating piece 4, reduce simultaneously the temperature in the thermal field, form a top height, the vertical temperature gradient that the bottom is low, when crucible 3 bottom temps were lower than the zero pour of silicon, the liquid-state silicon in the crucible 3 began to solidify and upwards grows until whole crystallization is finished, and finishes whole ingot casting process by annealing, process for cooling again.By this Novel polycrystalline silicon ingot furnace thermal field structure, with its production capacity by the 480kg/ stove, be promoted to the 650kg/ stove, production cycle is 70 hours, yield rate is higher than 70%, and effective capacity is about 4400kg per month, and unit cost descends more than 15%, thereby significantly improve the polycrystalline silicon ingot or purifying furnace production capacity, reduce production costs.
The utility model is not limited to aforesaid embodiment.The utility model expands to any new feature or any new combination that discloses in this manual, and the arbitrary new method that discloses or step or any new combination of process.
Claims (5)
1. Novel polycrystalline silicon ingot furnace thermal field structure, comprise upper furnace tube (1) and lower stove cylinder (5), upper furnace tube (1) and lower stove cylinder (5) are connected to form metallic cavity, it is characterized in that, be provided with crucible (3) in the metallic cavity, crucible (3) bottom is provided with graphite radiating piece (4), graphite radiating piece (4) below is provided with insulation quilt (7), crucible (3) bottom is supported by many graphite pillar stiffeners (6), crucible (3) top is provided with top heater (11), crucible (3) outside is provided with side heater (8), and top heater (11) top is provided with top thermal insulation layer (10), and side heater (8) outside is provided with moving thermal insulation layer (9).
2. Novel polycrystalline silicon ingot furnace thermal field structure according to claim 1 is characterized in that, described moving thermal insulation layer (9) is provided with suspension rod (12) and is connected on the upper furnace tube (1).
3. Novel polycrystalline silicon ingot furnace thermal field structure according to claim 2 is characterized in that, what described top heater (11) and side heater (8) adopted is Graphite Electrodes (2), is connected with copper electrode (13) on the Graphite Electrodes (2).
4. Novel polycrystalline silicon ingot furnace thermal field structure according to claim 3 is characterized in that, what described Graphite Electrodes (2) adopted is high-purity isostatic pressing formed graphite material.
5. Novel polycrystalline silicon ingot furnace thermal field structure according to claim 4 is characterized in that, the polysilicon capacity of described crucible (3) is 650kg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220381777 CN202717880U (en) | 2012-08-03 | 2012-08-03 | Novel polysilicon ingot casting furnace thermal field structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220381777 CN202717880U (en) | 2012-08-03 | 2012-08-03 | Novel polysilicon ingot casting furnace thermal field structure |
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| Publication Number | Publication Date |
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| CN202717880U true CN202717880U (en) | 2013-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220381777 Expired - Fee Related CN202717880U (en) | 2012-08-03 | 2012-08-03 | Novel polysilicon ingot casting furnace thermal field structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103696002A (en) * | 2013-12-16 | 2014-04-02 | 英利集团有限公司 | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure |
| CN106521623A (en) * | 2016-12-29 | 2017-03-22 | 常州大学 | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
| CN113970243A (en) * | 2021-10-14 | 2022-01-25 | 中国科学院沈阳科学仪器股份有限公司 | Thin-wall heat-insulating layer structure of beam source furnace |
-
2012
- 2012-08-03 CN CN 201220381777 patent/CN202717880U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103696002A (en) * | 2013-12-16 | 2014-04-02 | 英利集团有限公司 | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure |
| CN106521623A (en) * | 2016-12-29 | 2017-03-22 | 常州大学 | Thermal field structure of horizontal pulling forming equipment for silicon wafers |
| CN113970243A (en) * | 2021-10-14 | 2022-01-25 | 中国科学院沈阳科学仪器股份有限公司 | Thin-wall heat-insulating layer structure of beam source furnace |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 Termination date: 20210803 |
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| CF01 | Termination of patent right due to non-payment of annual fee |