CN201138138Y - Polycrystalline silicon segregating and cogging furnace without need of moving component - Google Patents
Polycrystalline silicon segregating and cogging furnace without need of moving component Download PDFInfo
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- CN201138138Y CN201138138Y CNU2007201991280U CN200720199128U CN201138138Y CN 201138138 Y CN201138138 Y CN 201138138Y CN U2007201991280 U CNU2007201991280 U CN U2007201991280U CN 200720199128 U CN200720199128 U CN 200720199128U CN 201138138 Y CN201138138 Y CN 201138138Y
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Abstract
The utility model discloses a polysilicon segregation ingot furnace without moving elements, comprising a vacuum firing furnace, a crucible arranged in the furnace body, a graphite support layer arranged outside the crucible, a soaking layer arranged under the crucible, heating elements arranged outside the crucible, a soaking layer arranged under the heating elements, an insulation layer arranged around and over the heating elements, and a cooling system arranged under the soaking layer. The utility model provides a polysilicon segregation ingot furnace without moving elements, and achieves the smooth and slow upward movement of the solid-liquid interface without moving any elements in the heating and crystallization processes inside the furnace body and without heating elements by delamination, thus achieving the crystallization and stretching in the crystallographic orientation of the liquid silicon in the crucible to achieve the purposes of ingot casting and purification.
Description
Technical field
The utility model belongs to the production of polysilicon equipment technical field, the fractional condensation and the ingot casting vacuum drying oven of the polysilicon of particularly a kind of preparation high-purity (purity＞99.99%).
Background technology
In the process of the production of polysilicon and purification, especially in the process of physics or metallurgy method (also comprising chemical method) preparation purifying polycrystalline silicon, need by directional solidification impurity elimination and ingot casting.Chinese patent 200620031881.4 utility model patents disclose a kind of preparation polysilicon ingot furnace, employing is heated the silicon water in the above-mentioned operation, silicon water in the crucible is heated, is incubated and cools off coming by the heating mantles that is provided with the layering heating element heater from bottom to top, because silicon water in practical operation and infeasible, causes oxidation, silicon water to spill and cause easily crucible to damage by the last crucible of directly pouring into easily; Mechanism's complexity of furnace roof, fault easily; And the mode that adopts the layering heating element heater can't guarantee the effect of the solid ingot casting of silicon water-setting in the crucible simultaneously, can cause the computing of Mathematical Modeling very complicated, and the given actual of desired temperature can't be finished according to model, can't control in real time.Therefore, this patent is actual and infeasible.
The utility model content
A kind of polysilicon fractional condensation ingot furnace that need not moving-member that the utility model provides, there is not moving-member in inherent whole heating of body of heater and the crystallization process, and need not by the layering heating element heater, the level that just can realize solid liquid interface is moved on slowly, make the liquid silicon in the crucible realize that crystallization and crystal orientation stretch, and reach the purpose of ingot casting and purification.
In order to achieve the above object, the utility model provides a kind of polysilicon fractional condensation ingot furnace that need not moving-member, comprises:
Vacuum furnace body is full of protective gas in this body of heater;
Be arranged on the crucible in the body of heater, this crucible is the cube or the cylindrical shape of no loam cake, and promptly the horizontal cross-section is square or circular;
Be arranged on the graphite supporting layer of crucible outside portion, silica crucible intensity step-down when preventing high temperature and cause silicon liquid seepage;
Be arranged on the equal thermosphere of crucible bottom;
Be arranged on the heating component of crucible and graphite supporting layer periphery;
Equal thermosphere bottom being arranged on below the heating element heater;
Be arranged on around the heating component and the heat-insulation layer at top, this heat-insulation layer links to each other with equal thermosphere, forms airtightly substantially with equal thermosphere, and it is lost to reduce heat, the raising energy efficiency;
Be arranged on the cooling system below the equal thermosphere;
Described heating component comprises:
Be positioned at the top heating element heater at crucible top;
Be positioned at the bottom heating element heater of equal thermosphere bottom;
Be positioned at graphite supporting layer peripheral heating element heater all around, this periphery heating element heater surrounds cubical four square heating surfaces or surrounds a cylindrical cylinder according to the shape correspondence of crucible;
Leave the slit between described three groups of heating element heaters;
Also be provided with temperature element around the described crucible;
Also has monitoring system; the protective gas around the crucible and pressure, the flow of cooling fluid are monitored; after adopting special-purpose thermodynamical model to carry out computing according to the temperature in the stove, pressure, flow and time parameter; the electric current of control crucible top, bottom and heating element heater all around; reach the temperature of crucible and silicon liquid is wherein progressively slowly descended from bottom to top; make molten silicon material crystallization and freezing; keep solid liquid interface all the time by rising on the plane simultaneously; reach the low impurity element of segregation coefficient that to remove in the silicon material, can reach good ingot casting effect again.
The monitoring system of this ingot furnace adopts high-precision temperature control and motion control, and automatic control system can be accepted control parameter and the setting value that the MATHEMATICAL MODEL OF THERMODYNAMICS from the user provides, and controls by the control parameter that Mathematical Modeling provides.Simultaneously can guarantee that also system can heat up by the requirement of technology, be incubated, lowers the temperature, discharging, and the manufacturing parameter in the body of heater production process carried out monitoring record and warning, simultaneously personnel can manually control and hand by operating desk/do not have disturbance automatically to switch
A kind of polysilicon fractional condensation ingot furnace of moving-member that need not that the utility model provides is when work, carry out material loading earlier, vacuumize, the energising heating makes crucible, silicon material intensification fusion in crucible supporting layer and the crucible, when silicon liquid after the fusion regular hour, it is given that the data that thermodynamical model is gathered according to automatic control system are carried out the setting value of Temperature Distribution, automatic control system is then controlled heating element heater according to the setting value that given temperature space distributes, make the silicon liquid of the fusing in crucible and the crucible begin upwards progressively cooling from the bottom, and upwards slowly solidify from the bottom, in the process of solidifying, the crystallization of silicon liquid forms polysilicon, and the solid liquid interface of crystallization remains under the level, to guarantee best crystallization effect, simultaneously, impurity under dephlegmation that segregation coefficient is little is upwards extruded, reach the purpose of impurity elimination, after the complete crystallization of the silicon in crucible, begin cooling and blanking.
Compared with prior art, the utility model does not have the relative motion of heating element heater and crucible in the stove internal cause, has reduced vibration interference, can guarantee best crystallization effect; Simultaneously, adopt the side to need not to adopt the method for layering heating element heater with one group of heating element heater, feasible real-time calculating according to thermodynamical model becomes possibility, solid liquid interface can the maintenance level be risen, the rate of climb also can reach optimum control, thereby reaches best crystallization effect and impurity elimination effect; Leave the slit between top, side, the three groups of heating element heaters in bottom, top-down temperature field can be formed; And whole heating element heater is placed in the vacuum drying oven through airtight relatively heat-insulation layer again, can guarantee higher energy efficiency.
The every stove of the utility model can be purified and ingot casting to one ton polysilicon nearly at every turn, and factors such as the size for the treatment of capacity and body of heater and crucible and heating power are relevant, and every stove processing time is 40-70 hour, and the processing time is relevant with the weight and the crystalline condition of silicon material.
Description of drawings
Fig. 1 is a kind of structural representation that need not the polysilicon fractional condensation ingot furnace of moving-member that the utility model provides.
The specific embodiment
Followingly specify better embodiment of the present utility model according to Fig. 1:
As shown in Figure 1, the utility model provides a kind of polysilicon fractional condensation ingot furnace that need not moving-member, comprises:
Vacuum furnace body is full of protective gas in this body of heater;
Be arranged on the crucible 1 in the body of heater, this crucible 1 is the cube of no loam cake or cylindrical shape, and promptly the horizontal cross-section is square or circular;
Be arranged on the graphite supporting layer 2 of crucible 1 outside portion, silica crucible intensity step-down when preventing high temperature and cause silicon liquid seepage;
Be arranged on the equal thermosphere 6 of crucible 1 bottom;
Be arranged on the heating component of crucible 1 and graphite supporting layer 2 peripheries;
Equal thermosphere 7 bottom being arranged on below the heating element heater;
Be arranged on around the heating component and the heat-insulation layer 10 at top, this heat-insulation layer 10 links to each other with equal thermosphere 7, and is airtight substantially with equal thermosphere 7 formation, reduces heat and scatters and disappears, and improves energy efficiency;
Be arranged on the cooling system 8 below the equal thermosphere 7;
Described heating component comprises:
Be positioned at the top heating element heater 3 at crucible 1 top;
Be positioned at the bottom heating element heater 4 of equal thermosphere 6 bottoms;
Be positioned at graphite supporting layer 2 peripheral heating element heater 5 all around, this periphery heating element heater surrounds cubical four square heating surfaces or surrounds a cylindrical cylinder according to the shape correspondence of crucible 1;
Leave the slit between described three groups of heating element heaters 3,4,5;
Also be provided with temperature element around the described crucible;
Also has monitoring system; to the protective gas around the crucible and the pressure of cooling fluid; flow is monitored; adopt special-purpose thermodynamical model according to the temperature in the stove; pressure; after flow and time parameter carry out computing; control crucible top; bottom and heating element heater (3 all around; 4; 5) electric current; reach the temperature of crucible 1 and silicon liquid 9 is wherein progressively slowly descended from bottom to top; make molten silicon material 9 crystallization and freezings; keep solid liquid interface all the time by rising on the plane simultaneously; reach the low impurity element of segregation coefficient that to remove in the silicon material 9, can reach good ingot casting effect again.
When work, carry out material loading earlier, vacuumize, the energising heating makes crucible 1, silicon material 9 intensification fusions in crucible supporting layer 2 and the crucible, when silicon liquid after 9 fusion regular hours, it is given that the data that thermodynamical model is gathered according to automatic control system are carried out the setting value of Temperature Distribution, the setting value that automatic control system then distributes according to given temperature space is to heating element heater 3,4,5 control, make the silicon liquid 9 of the fusing in crucible 1 and the crucible begin upwards progressively cooling from the bottom, and upwards slowly solidify from the bottom, in the process of solidifying, 9 crystallizations of silicon liquid form polysilicon, and the solid liquid interface of crystallization remains under the level, to guarantee best crystallization effect, simultaneously, impurity under dephlegmation that segregation coefficient is little is upwards extruded, reach the purpose of impurity elimination, after the complete crystallization of the silicon in crucible 1, begin cooling and blanking.
The every stove of the utility model can be purified and ingot casting to one ton polysilicon nearly at every turn, and factors such as the size for the treatment of capacity and body of heater and crucible and heating power are relevant, and every stove processing time is 40-70 hour, and the processing time is relevant with the weight and the crystalline condition of silicon material.
Claims (8)
1. a polysilicon fractional condensation ingot furnace that need not moving-member is characterized in that, comprises:
Vacuum furnace body;
Be arranged on the crucible (1) in the body of heater;
Be arranged on the graphite supporting layer (2) of crucible (1) outside portion;
Be arranged on the equal thermosphere (6) of crucible (1) bottom;
Be arranged on the peripheral heating component of crucible (1) and graphite supporting layer (2);
Equal thermosphere (7) bottom being arranged on below the heating element heater;
Be arranged on around the heating component and the heat-insulation layer (10) at top, this heat-insulation layer (10) links to each other with equal thermosphere (7) during the body of heater operate as normal;
Be arranged on the following cooling system (8) of equal thermosphere (7).
2. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 1 is characterized in that described heating component comprises:
Be positioned at the top heating element heater (3) at crucible (1) top;
Be positioned at the bottom heating element heater (4) of equal thermosphere (6) bottom;
Be positioned at graphite supporting layer (2) peripheral heating element heater (5) all around.
3. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 2 is characterized in that, leaves the slit between described three groups of heating element heaters (3,4,5).
4. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 1 is characterized in that, also is provided with temperature element around the described crucible.
5. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 1 is characterized in that, the described polysilicon fractional condensation ingot furnace that need not moving-member also has monitoring system.
6. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 1 is characterized in that, is full of mobile protective gas in the described vacuum furnace body when work.
7. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 1 is characterized in that described crucible (1) is the cube of no loam cake or cylindrical shape, and promptly the horizontal cross-section is square or circular.
8. the polysilicon fractional condensation ingot furnace that need not moving-member as claimed in claim 2 is characterized in that, described peripheral heating element heater (5) surrounds cubical four square heating surfaces or surrounds a cylindrical cylinder according to the shape correspondence of crucible (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201991280U CN201138138Y (en) | 2007-12-12 | 2007-12-12 | Polycrystalline silicon segregating and cogging furnace without need of moving component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201991280U CN201138138Y (en) | 2007-12-12 | 2007-12-12 | Polycrystalline silicon segregating and cogging furnace without need of moving component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201138138Y true CN201138138Y (en) | 2008-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2007201991280U Expired - Fee Related CN201138138Y (en) | 2007-12-12 | 2007-12-12 | Polycrystalline silicon segregating and cogging furnace without need of moving component |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154685A (en) * | 2011-03-15 | 2011-08-17 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN109321975A (en) * | 2018-11-19 | 2019-02-12 | 永平县泰达废渣开发利用有限公司 | Monocrystalline silicon directional solidification seeding module |
-
2007
- 2007-12-12 CN CNU2007201991280U patent/CN201138138Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154685A (en) * | 2011-03-15 | 2011-08-17 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102154685B (en) * | 2011-03-15 | 2012-08-15 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN102766901B (en) * | 2012-08-20 | 2015-09-30 | 元亮科技有限公司 | The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN109321975A (en) * | 2018-11-19 | 2019-02-12 | 永平县泰达废渣开发利用有限公司 | Monocrystalline silicon directional solidification seeding module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu strong Photovoltaic Technology Co., Ltd. Assignor: Shanghai Pro Entergy Technology Co., Ltd. Contract record no.: 2012320000363 Denomination of utility model: Polycrystalline silicon segregating and cogging furnace without need of moving component Granted publication date: 20081022 License type: Exclusive License Record date: 20120330 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20131212 |