CN203382850U - Polycrystalline silicon ingot furnace thermal field heating device - Google Patents
Polycrystalline silicon ingot furnace thermal field heating device Download PDFInfo
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- CN203382850U CN203382850U CN201320445772.7U CN201320445772U CN203382850U CN 203382850 U CN203382850 U CN 203382850U CN 201320445772 U CN201320445772 U CN 201320445772U CN 203382850 U CN203382850 U CN 203382850U
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- polycrystalline silicon
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Abstract
The utility model belongs to the field of polycrystalline silicon ingots and particularly relates to a polycrystalline silicon ingot furnace thermal field heating device. The polycrystalline silicon ingot furnace thermal field heating device comprises a thermoelectric couple, a side heater and a heat insulating layer which are sequentially arranged from inside to outside around the outer wall of a quartz crucible. The polycrystalline silicon ingot furnace thermal field heating device is characterized in that the upper part of the quartz crucible is provided with a concave heater, and the concave heater is connected with the side heater. The polycrystalline silicon ingot furnace thermal field heating device is unique in conception; the top concave heater is controlled to heat the center of liquid silicon according to the concave characteristic of the concave heater in a polycrystalline silicon ingot casting process to ensure that the center temperature of the liquid silicon is close to the side temperature of the liquid silicon, so that a positive temperature gradient is formed in a liquid phase, a convex solid-liquid interface gradually tends to a level solid-liquid interface, the ingot yield is high, meanwhile, the crystal grain orientation can be improved, and the ingot casting efficiency can be greatly increased.
Description
Technical field
The utility model belongs to the polycrystalline silicon ingot casting field, particularly the polysilicon ingot furnace thermal field heating unit.
Background technology
Polysilicon is a kind of form of elemental silicon, and when the elemental silicon of melting solidifies under crossing cool condition, Siliciumatom is arranged in many nucleus with the diamond lattice form, and these nucleus grow up to the different crystal grain of high preferred orientation, and these crystal grain are joined together and just form polysilicon.The technique of producing the photovoltaic product in photovoltaic industry comprises polycrystalline silicon ingot casting, dicing, makes cell piece and is encapsulated as solar components, visible polycrystalline silicon ingot casting is the important component part of photovoltaic industry, is the first link of producing the photovoltaic product.Wherein polycrystalline silicon casting ingot process adopts polycrystalline silicon ingot or purifying furnace to complete, and it comprises step: 1) elemental silicon is heated, until the elemental silicon fusing; 2) the cooling elemental silicon of melting that makes solidifies, long crystalline substance; 3) anneal, and cooling.
At present, in polycrystalline silicon casting ingot process, because the sidepiece well heater is relative with quartz crucible motionless, the sidepiece well heater is in heated condition to quartz crucible always, so just make the temperature of silicon liquid at quartz crucible inside center place lower than crucible sidepiece place temperature, make center silicon liquid solidify prior to sidepiece, thereby the solid-liquid interface obtained is all convex, the thermograde difference is larger, is difficult to obtain the comparatively solid-liquid interface of level.The silicon ingot obtained will be the excision of upper end impurity, and the finished product resection rate of convex silicon ingot is higher, thereby has affected the yield of ingot casting.Simultaneously, owing to being difficult to reach laterally being uniformly distributed of temperature, so be unfavorable for very much the homogenizing growth of crystal.
Patent 201210389622.9, disclose a kind of polycrystalline silicon ingot or purifying furnace and crucible thereof, comprises top heater and the side heater be located in furnace chamber, also comprises the central heater of being located in furnace chamber, in order to the middle part silicon material in crucible is heated.The weak point of this invention is the crucible structure complexity, needs specific customization; And, in the ingot casting process, central heater and ingot casting must have adhesion, be unfavorable for that the later stage gets ingot and cleaning, silicon ingot is easy to breakage; Simultaneously, central heater takies the silicon ingot volume, and there is emptying aperture in the silicon ingot center of taking-up, and the butt yield is reduced greatly.
The utility model content
The utility model overcomes above-mentioned not enough problem, a kind of polysilicon ingot furnace thermal field heating unit is provided, in the polycrystalline silicon ingot casting process, by at the thermal field top, with the matrix well heater, obtaining the solid-liquid interface of level more, simultaneously in the long brilliant process of crystal, reach the silicon liquid consistence of temperature everywhere by the power of controlling the matrix well heater, realize the long brilliant process of homogenizing.
A kind of polysilicon ingot furnace thermal field heating unit that the utility model adopted for achieving the above object, comprise the quartz crucible outer wall from inside to outside successively around thermopair, sidepiece well heater and thermofin, the top that it is characterized in that quartz crucible is equipped with the matrix well heater, and the matrix well heater is connected with the sidepiece well heater.
The radius-of-curvature of matrix well heater is preferably 8～9m.
The matrix well heater is the left-right symmetry structure, and wherein concave point is positioned on the quartz crucible central shaft, and each symmetric points temperature of both sides is consistent, and all lower than the concave point temperature.
Principle of work of the present utility model: adopt this device to carry out polycrystalline silicon casting ingot process, comprise that charging vacuumizes, add argon gas and boost, heating and heat preservation makes the fusing of silicon material, and crystal is long brilliant, and annealing cools; Wherein, in the long brilliant process of crystal, crucible temperature in control device, make it drop to 1400～1420 ℃, and the power of regulating first the matrix well heater makes on silicon material horizontal direction between each point temperature head within 3 ℃; Again regulate the matrix heater power, complete long brilliant.Before the long crystalline substance of crystal silicon, finely tune first power and make horizontal direction each point temperature head dwindle, in long brilliant process, regulating power, reduce thermal power again, in order to make crystal silicon, slowly lowers temperature, is conducive to crystal long brilliant.The quartz crucible bottom is equipped with heat exchange mass and thermal baffle from top to bottom successively.The effect of heat exchange mass is dispelled the heat to the ingot casting bottom in long brilliant process, and the effect of thermal baffle is that quartz crucible is carried out to heat-insulation and heat-preservation.
The present invention conceives uniqueness, in the polycrystalline silicon ingot casting process, spill characteristics due to matrix well heater itself, controlling matrix well heater Dui Guiye center, top is heated, make its temperature close to silicon liquid sidepiece temperature, thereby form positive thermograde in liquid phase, the convex solid-liquid interface is tending towards smooth solid-liquid interface gradually, the ingot casting yield is high, can improve grain orientation simultaneously and can greatly improve ingot casting efficiency.
The accompanying drawing explanation
Fig. 1 is the utility model schematic diagram.
In figure, 1, inlet pipe 2, body of heater 3, matrix well heater 4, thermofin 5, sidepiece well heater 6, thermopair 7, quartz crucible 8, heat exchange mass 9, thermal baffle
Embodiment
Describe the utility model in detail below in conjunction with specific embodiment and accompanying drawing, but the utility model is not limited to specific embodiment.
Embodiment 1:
1. selecting the radius of matrix well heater is 8m, and heater power is 168Kw.
2. 650Kg silicon material is packed in quartz crucible 7; be evacuated down to 0.1Pa, by inlet pipe 1, pass into argon gas as protection gas, open 5 heating of sidepiece well heater; the moisture evaporation of thermofin 4, silicon material etc. is fallen, and the interior temperature of lifting quartz crucible 7 reach 1175 ℃ in 2 hours.
3. pass into argon gas as protection gas, make the interior pressure of body of heater 2 remain on 400KPa, make the interior temperature of quartz crucible 7 arrive 1545 ℃ and be incubated 8 hours in 4 hours, until the silicon material all melts end.
4. control sidepiece well heater 5, make the temperature of quartz crucible 7 drop to 1400 ℃, the power range of regulating first matrix well heater 3 is 0～8kw, thermopair 6 is connected with computer, the Real-Time Monitoring temperature variation, control the power of matrix well heater 3, make on silicon material horizontal direction between each point temperature head within 3 ℃.
5. mechanical external force lifts thermofin 4, form a thermograde to top from the melt bottom, the long brilliant time is 28h, in long brilliant process, again regulates matrix well heater 3, the power of matrix well heater 3 is controlled to 55kw, thereby can accesses the more solid-liquid interface of level.
6., after crystal has been grown, crystal ingot keeps 2h at 1300 ℃, makes the temperature of crystal ingot even, thereby reduces thermal stresses, reduces dislocation.
7. after annealing, in body of heater 2, by inlet pipe 1, pass into large flow argon gas, make temperature be reduced to gradually room temperature, rate of temperature fall is 60 ℃/h.
Embodiment 2
1. selecting the radius of matrix well heater is 9m, and heater power is 180Kw.
2. 750Kg silicon material is packed in quartz crucible 7; be evacuated down to 0.08Pa, by inlet pipe 1, pass into argon gas as protection gas, open 5 heating of sidepiece well heater; the moisture evaporation of thermofin 4, silicon material etc. is fallen, and the interior temperature of lifting quartz crucible 7 reach 1175 ℃ in 2 hours.
3. pass into argon gas as protection gas, make the interior pressure of body of heater 2 remain on 400KPa, make the interior temperature of quartz crucible 7 arrive 1545 ℃ and be incubated 10 hours in 5 hours, until the silicon material all melts end.
4. control sidepiece well heater 5, make the temperature of quartz crucible 7 drop to 1400 ℃, the power range of regulating first matrix well heater 3 is 9～18kw, thermopair 6 is connected with computer, the Real-Time Monitoring temperature variation, control the power of matrix well heater 3, make on silicon material horizontal direction between each point temperature head within 3 ℃.
5. mechanical external force lifts thermofin 4, form a thermograde to top from the melt bottom, the long brilliant time is 40h, in long brilliant process, again regulates matrix well heater 3, the power of matrix well heater 3 is controlled to 60kw, thereby can accesses the more solid-liquid interface of level.
6., after crystal has been grown, crystal ingot keeps 4h at 1370 ℃, makes the temperature of crystal ingot even, thereby reduces thermal stresses, reduces dislocation.
7. after annealing, in body of heater 2, by inlet pipe 1, pass into large flow argon gas, make temperature be reduced to gradually room temperature, rate of temperature fall is 80 ℃/h.
In sum, the utility model can be in the polycrystalline silicon ingot casting process, top matrix well heater can obtain comparatively desirable solid-liquid interface, and by regulating the heating power of top matrix well heater, make horizontal direction each point temperature in 3 ℃ of temperature ranges, and form positive thermograde in liquid phase, can improve grain orientation simultaneously and can greatly improve ingot casting efficiency.
Claims (2)
1. a polysilicon ingot furnace thermal field heating unit, comprise quartz crucible (7) outer wall from inside to outside successively around thermopair (6), sidepiece well heater (5) and thermofin (4), the top that it is characterized in that quartz crucible (7) is equipped with matrix well heater (3), and matrix well heater (3) is connected with sidepiece well heater (5).
2. a kind of polysilicon ingot furnace thermal field heating unit according to claim 1, the radius-of-curvature that it is characterized in that matrix well heater (3) is 8～9m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320445772.7U CN203382850U (en) | 2013-07-25 | 2013-07-25 | Polycrystalline silicon ingot furnace thermal field heating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320445772.7U CN203382850U (en) | 2013-07-25 | 2013-07-25 | Polycrystalline silicon ingot furnace thermal field heating device |
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| Publication Number | Publication Date |
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| CN203382850U true CN203382850U (en) | 2014-01-08 |
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| CN201320445772.7U Expired - Fee Related CN203382850U (en) | 2013-07-25 | 2013-07-25 | Polycrystalline silicon ingot furnace thermal field heating device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107699943A (en) * | 2017-11-16 | 2018-02-16 | 江苏协鑫硅材料科技发展有限公司 | Prepare the heater and ingot furnace of crystalline silicon ingot |
| CN109371459A (en) * | 2018-12-21 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of ladder-like heater improving melt temperature gradient |
| CN110886016A (en) * | 2019-12-27 | 2020-03-17 | 大连理工大学 | Device for uniformly distributing phosphorus element in polycrystalline silicon |
-
2013
- 2013-07-25 CN CN201320445772.7U patent/CN203382850U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107699943A (en) * | 2017-11-16 | 2018-02-16 | 江苏协鑫硅材料科技发展有限公司 | Prepare the heater and ingot furnace of crystalline silicon ingot |
| CN109371459A (en) * | 2018-12-21 | 2019-02-22 | 内蒙古中环光伏材料有限公司 | A kind of ladder-like heater improving melt temperature gradient |
| CN110886016A (en) * | 2019-12-27 | 2020-03-17 | 大连理工大学 | Device for uniformly distributing phosphorus element in polycrystalline silicon |
| CN110886016B (en) * | 2019-12-27 | 2021-04-13 | 大连理工大学 | Device for uniformly distributing phosphorus element in polycrystalline silicon |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180112 Address after: Miao road Laoshan District 266000 Shandong city of Qingdao Province, No. 52 906 Patentee after: QINGDAO NESI DESIGN & RESEARCH INSTITUTE CO.,LTD. Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co.,Ltd. Effective date of registration: 20180112 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co.,Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266234 Patentee before: QINGDAO LONGSHENG CRYSTALLINE SILICON TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140108 Termination date: 20190725 |
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| CF01 | Termination of patent right due to non-payment of annual fee |