CN102425006A - Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method - Google Patents
Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method Download PDFInfo
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- CN102425006A CN102425006A CN2011104577480A CN201110457748A CN102425006A CN 102425006 A CN102425006 A CN 102425006A CN 2011104577480 A CN2011104577480 A CN 2011104577480A CN 201110457748 A CN201110457748 A CN 201110457748A CN 102425006 A CN102425006 A CN 102425006A
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Abstract
The invention relates to a method and a thermal field for growing ingot polycrystal silicon by adopting a directional solidification method. The method comprises the following steps of melting, crystallizing, annealing and cooling. The heat insulation cavity in the ingot polycrystal thermal field consists of a top plate, side walls and a bottom plate, wherein the top plate is fixedly positioned; the side walls and the bottom plate can move up and down; and the distance between each side wall and the bottom plate is controlled according to the requirements of different stages in a crystal growth process. The invention has the advantages that: the power consumption in the material meting process is reduced, and the effect of saving power is achieved; and the movement distance of the bottom plate and each side wall of the heat cavity is respectively controlled, the heat dissipation direction of the bottom is controlled in the polycrystal silicon ingot growth process and the growth interface of the crystal is indirectly controlled, so that the flat growth interface is favorable for obtaining high-quality crystal and improving the installing and replacing efficiency of photovoltaic cells.
Description
Technical field
The present invention relates to a kind of polycrystalline ingot casting crystal growth technique, especially a kind of can be effectively energy-conservation and the method and the thermal field thereof of the ingot casting polycrystalline growth of control crystal growth interface.
Background technology
Adopt directional freeze that long ingot casting polysilicon takes place two kinds of representational thermal fields are arranged; A kind of is to be representative with GTsolar; Its characteristics reach the purpose of unlatching and closed incubation cavity bottom for to move through the incubation cavity sidewall, realize operations such as crystal material, growth, annealing, cooling.Another kind is to be representative with smart merit polycrystalline furnace reactors thermal field, and the characteristics of its growth technique do, through moving of incubation cavity base plate, reaches the purpose of opening with closed incubation cavity bottom, realizes the operation of growing such as crystal material, growth, annealing, cooling.Two kinds of growth techniques respectively have its characteristics, and the cavity between GTsolar ingot casting piece and the incubation cavity base plate has increased the area of dissipation of high temperature cavity in changing material and annealing process, increased energy consumption.Smart merit polycrystalline furnace is in long brilliant process; The incubation cavity sidewall is fixed, and base plate moves down, and thermal window is bigger apart from ingot casting piece distance; Heat radiation causes its center specific heat load much larger than the edge around opening; Cause crystal growth interface center epirelief, radial symmetry gradient is bigger in the crystal, influences the crystalline quality thereby thermal stresses will produce too much lattice defect.
Summary of the invention
The technical problem that the present invention will solve is: propose a kind of can be effectively energy-conservation and the method and the thermal field thereof of the ingot casting polycrystalline growth of control crystal growth interface.
The technical scheme that the present invention adopted is: a kind of method of directional solidification method growth ingot casting polysilicon may further comprise the steps:
Before melting process, incubation cavity base plate and sidewall move simultaneously, are kept closed between the two; It is 0～200mm that base plate and graphite help the distance between the grumeleuse, and incubation cavity is a closure state, and the volume compression of incubation cavity is to minimum; When keeping the high temperature melting process; Make that the heat-delivery surface of incubation cavity is minimum, thereby reduce energy consumption, saves energy.
When growing brilliant process, incubation cavity base plate and sidewall move down 5～500mm at first simultaneously, and rear wall moves on gradually, and base plate moves down gradually, and both separate.Graphite helps grumeleuse high temperature lower surface to lower the temperature through slit between incubation cavity base plate and the sidewall and furnace wall generation heat exchange, and realization crystalline forming core is also grown up.Through adjustment incubation cavity base plate and the surface of separation of sidewall and the distance that graphite helps the grumeleuse lower surface, can control the crystalizing interface at long brilliant initial stage.Surface of separation and graphite help the distance between the grumeleuse lower surface more little, and graphite helps below the grumeleuse heat radiation of radial direction even more, obtain the crystalizing interface of putting down more easily at the long brilliant initial stage.
During cooling; When being in the cooling of pyritous crystal in order to make; Axial and radial thermograde minimum in the body, graphite ingot casting piece underlaying surface temperature radial symmetry gradient must be little, for reaching this purpose; Graphite ingot casting piece lower surface to around when dispelling the heat, graphite helps the distance of the surface of separation of grumeleuse lower surface and incubation cavity base plate and sidewall will be from small to large.When crystal was in the height more than 800 ℃, it is motionless that sidewall keeps, and the base plate small scale moves down, and distance is little between sidewall and the base plate.When the crystalline temp temperature drops to below 800 ℃, can increase the distance between sidewall and the base plate, enlarge thermal window, reach the purpose of quick crystals cooled.
Simultaneously; The present invention also provides a kind of thermal field of directional solidification method growth ingot casting polysilicon; Form furnace chamber by upper furnace body and lower furnace body; Be provided with the incubation cavity of being made up of incubation cavity top board, incubation cavity sidewall and incubation cavity base plate in the furnace chamber, be disposed with quartz ceramic crucible, plumbago crucible and graphite in the incubation cavity from top to bottom and help grumeleuse, graphite helps the middle part of the lower surface of grumeleuse to be provided with pillar stiffener; The outside top of plumbago crucible is provided with well heater, and the middle part of described incubation cavity top board is provided with gas cylinder; Described incubation cavity base plate and the detachable setting of incubation cavity sidewall, the top of incubation cavity sidewall is provided with the sidewall pull bar, and described pull bar vertically prolongs the outside that rises to upper furnace body; The lower surface of incubation cavity base plate connects the base plate pull bar, and the base plate pull bar vertically prolongs the outside that rises to lower furnace body.
Say that further for the needs according to the different steps of long brilliant process, incubation cavity base plate of the present invention is with the incubation cavity sidewall while or move up and down separately, the internal diameter of described incubation cavity sidewall is greater than the external diameter 5～20mm of incubation cavity base plate.
The invention has the beneficial effects as follows: 1) reduced the power consumption of changing the material process, reached the effect of economize on electricity, changed material engineering energy consumption and can reduce by 10～15%; 2) through controlling the miles of relative movement of incubation cavity base plate and incubation cavity sidewall respectively; In the polycrystalline silicon ingot process of growth, control bottom heat dissipation direction is controlled the crystalline growth interface indirectly; Smooth growth interface helps to obtain high-quality crystal, and the dress that helps improving photovoltaic cell changes efficient; The brilliant process crystal growth interface of whole length, promptly solid-liquid interface can be kept comparatively ideal flat state, reduces the thermal stresses in the crystal, improves crystal mass.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the thermal field structure synoptic diagram of the present invention when carrying out thermal field heating, fusing and annealing stage technology;
Fig. 2 is the thermal field structure synoptic diagram of the present invention when carrying out long crystalline substance of thermal field and colling stages technology;
Among the figure: 1, incubation cavity top board; 2, quartz ceramic crucible; 3, plumbago crucible; 4, graphite helps grumeleuse; 5, lower furnace body; 6, pillar stiffener; 7, incubation cavity sidewall pull bar; 8, gas cylinder; 9, upper furnace body; 10, well heater; 11, incubation cavity sidewall; 12, incubation cavity base plate; 13, incubation cavity base plate pull bar.
Embodiment
Combine accompanying drawing and preferred embodiment that the present invention is done further detailed explanation now.These accompanying drawings are the synoptic diagram of simplification, substruction of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
Like Fig. 1, shown in 2; A kind of thermal field of directional solidification method growth ingot casting polysilicon; Form furnace chamber by upper furnace body 9 and lower furnace body 5; Be provided with the incubation cavity of being made up of incubation cavity top board 1, incubation cavity sidewall 11 and incubation cavity base plate 12 in the furnace chamber, be disposed with quartz ceramic crucible 2, plumbago crucible 3 and graphite in the incubation cavity from top to bottom and help grumeleuse 4, graphite helps the middle part of the lower surface of grumeleuse 4 to be provided with pillar stiffener 6; The outside top of plumbago crucible is provided with well heater 10, and the middle part of described incubation cavity top board 1 is provided with gas cylinder 8; Described incubation cavity base plate 12 and the 11 detachable settings of incubation cavity sidewall, the top of incubation cavity sidewall 11 is provided with sidewall pull bar 7, and described sidewall pull bar 7 vertically prolongs the outside that rises to upper furnace body 9; The lower surface of incubation cavity base plate 12 connects base plate pull bar 13, and base plate pull bar 13 vertically prolongs the outside that rises to lower furnace body 5.
Helping 25cm place, grumeleuse below with graphite is zero point.
1) before the fusing: incubation cavity base plate and incubation cavity sidewall move simultaneously, are kept closed between the two, and it is 5cm that incubation cavity base plate and graphite help the distance between the grumeleuse; Reduce traditional thermal field incubation cavity base plate and graphite and helped the space between the grumeleuse, make the high temperature melting stage, thereby high-temperature space has reduced heat radiation, reached energy-conservation effect;
2) high temperature melting, after fusing is accomplished 0.5 hour; Incubation cavity base plate and incubation cavity sidewall are displaced downwardly to zero point simultaneously; Draw back incubation cavity base plate and graphite and help the distance between the grumeleuse, when opening the incubation cavity base plate, in crucible, be formed centrally cold spot, the large size crystal grain of expansion around the mind-set in the formation;
3) long brilliant: long brilliant stage difference and traditional thermal field, incubation cavity sidewall and base plate be move toward one another simultaneously, has strengthened the control to process window;
The G1 stage: move on the incubation cavity sidewall apart from 3cm place at zero point, the incubation cavity base plate is displaced downwardly to apart from zero point-5cm, and the time is 0.5 hour;
The G2 stage: move on the incubation cavity sidewall apart from 6cm at zero point, the incubation cavity base plate is displaced downwardly to apart from zero point-6cm, and the time is 2.5 hours;
The G3 stage: move on the incubation cavity sidewall apart from 8cm at zero point, the incubation cavity base plate is displaced downwardly to apart from zero point-6cm, and the time is 6 hours;
The G4 stage: move on the incubation cavity sidewall apart from 10cm at zero point, the incubation cavity base plate is displaced downwardly to apart from zero point-5cm, and the time is 1 hour;
The G5 stage: move on the incubation cavity sidewall apart from 16cm at zero point, the incubation cavity base plate is displaced downwardly to zero point, and the time is 8 hours;
The G6 stage: move on the incubation cavity sidewall apart from 17cm at zero point, the incubation cavity base plate is displaced downwardly to zero point, and the time is 5 hours;
The G7 stage: move on the incubation cavity sidewall apart from 17cm at zero point, the incubation cavity base plate is displaced downwardly to zero point, and the time is 4 hours;
4) get into annealing stage, incubation cavity base plate and incubation cavity sidewall are moved to graphite simultaneously help 5cm place below the grumeleuse; Reduce high-temperature space, practice thrift power consumption, the insulation of incubation cavity bottom is good, helps reducing the intravital thermograde of crystal ingot, reduces the lattice defect that crystals causes because of thermal stresses;
5) cooling: different with traditional thermal field, the present invention keeps the incubation cavity sidewall motionless to the cooling window of crystal ingot, from moving down through incubation cavity, and enlarges the cooling window gradually;
The C1 stage: the incubation cavity sidewall keeps motionless, and the incubation cavity base plate is displaced downwardly to apart from 12cm place at zero point, and the time is 0.5 hour;
The C2 stage: the incubation cavity sidewall keeps motionless, and the incubation cavity base plate is displaced downwardly to apart from 10cm place at zero point, and the time is 2 hours;
The C3 stage: the incubation cavity sidewall keeps motionless, and the incubation cavity base plate is displaced downwardly to the place at zero point, and the time is 4 hours;
The C4 stage: move 5cm on the incubation cavity sidewall, the incubation cavity base plate be displaced downwardly to apart from the zero point-the 10cm place, the time is 5 hours;
The C5 stage: the incubation cavity sidewall keeps motionless, and it is motionless that the incubation cavity base plate keeps, and the time is 5 hours;
Below through table 1 explanation:
| Stage | Time (hr.) | Sidewall (cm) | Base plate (cm) |
| Heating | —— | 20 | 20 |
| Fusing | —— | 20 | 20 |
| Fusing-end | 0.5 | 0 | 0 |
| Long brilliant G1 | 0.5 | 3 | -5 |
| Long brilliant G2 | 2.5 | 6 | -6 |
| Long brilliant G3 | 6 | 8 | -6 |
| Long |
1 | 10 | -5 |
| Long brilliant G5 | 5 | 16 | 0 |
| Long |
8 | 17 | 0 |
| Long brilliant G7 | 4 | 17 | 0 |
| Annealing | —— | 20 | 20 |
| Cooling C1 | 0.5 | 20 | 12 |
| Cooling C2 | 2 | 20 | 10 |
| Cooling C3 | 4 | 20 | 0 |
| Cooling C4 | 5 | 25 | -10 |
| Cooling C5 | 5 | 25 | -10 |
Test result does, gets under the situation in identical charge, and fusion stage economize on electricity 236kwh reduces about 20% on year-on-year basis.Silicon chip is under same battery technology, and cell conversion efficiency promotes 0.1 percentage point.
Embodiment 2
With the fusion stage make-position is zero point.
Process step is similar with embodiment 1, no longer itemizes here, and concrete processing parameter is as shown in table 2:
| Stage | Time (hr.) | Sidewall (cm) | Base plate (cm) |
| Heating | —— | 0 | 0 |
| Fusing | —— | 0 | 0 |
| Fusing-end | 0.5 | -20 | -20 |
| Long brilliant G1 | 0.5 | -17 | -25 |
| Long brilliant G2 | 2.5 | -14 | -26 |
| Long brilliant G3 | 6 | -12 | -26 |
| Long brilliant G4 | 1 | -10 | -25 |
| Long brilliant G5 | 5 | -4 | -20 |
| Long brilliant G6 | 8 | -3 | -20 |
| Long brilliant G7 | 4 | -3 | -20 |
| Annealing | —— | 0 | 0 |
| Cooling C1 | 0.5 | 0 | -8 |
| Cooling C2 | 2 | 0 | -10 |
| Cooling C3 | 4 | 0 | -20 |
| Cooling C4 | 5 | 5 | -30 |
| Cooling C5 | 5 | 5 | -30 |
Test result does, gets under the situation in identical charge, and fusing and the annealing stage 316kwh that economizes on electricity reduces about 21% on year-on-year basis.Silicon chip is under same battery technology, and cell conversion efficiency promotes 0.12 percentage point.
What describe in the above specification sheets is embodiment of the present invention; Various not illustrating constitutes restriction to flesh and blood of the present invention; Under the those of ordinary skill of technical field after having read specification sheets can to before described embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.
Claims (5)
1. the method for directional solidification method growth ingot casting polysilicon is characterized in that may further comprise the steps:
1) before the fusing: incubation cavity base plate and incubation cavity sidewall move simultaneously, are kept closed between the two, and it is 0～200mm that incubation cavity base plate and graphite help the distance between the grumeleuse;
2) high temperature melting;
3) long brilliant: the incubation cavity base plate moves down earlier 5～500mm simultaneously with the incubation cavity sidewall, and the incubation cavity sidewall moves on gradually then, and the incubation cavity base plate moves down gradually, both is separated form the slit;
4) cooling: graphite helps grumeleuse and incubation cavity sidewall to keep static relatively, and the incubation cavity base plate moves down with the decline of crystalline temp gradually.
2. the method for directional solidification method growth ingot casting polysilicon as claimed in claim 1 is characterized in that: graphite helps the grumeleuse lower surface through the slit and the thermal field furnace wall of incubation cavity base plate and incubation cavity sidewall heat exchange to take place in the described step 3).
3. the method for directional solidification method growth ingot casting polysilicon as claimed in claim 1, it is characterized in that: when the crystalline temperature was higher than 800 ℃, the incubation cavity base plate slowly moved down in the described step 4); When crystalline temp was lower than 800 ℃, the incubation cavity base plate was accelerated the speed that moves down.
4. the thermal field of directional solidification method growth ingot casting polysilicon; It is characterized in that: form furnace chamber by upper furnace body (9) and lower furnace body (6); Be provided with the incubation cavity of forming by incubation cavity top board (1), incubation cavity sidewall (11) and incubation cavity base plate (12) in the furnace chamber; Be disposed with quartz ceramic crucible (2), plumbago crucible (3) and graphite in the incubation cavity from top to bottom and help grumeleuse (4), graphite helps the middle part of the lower surface of grumeleuse (4) to be provided with pillar stiffener (6); The outside top of plumbago crucible (3) is provided with well heater (10), and the middle part of described incubation cavity top board (1) is provided with gas cylinder (8); Described incubation cavity base plate (12) and the detachable setting of incubation cavity sidewall (11), the top of incubation cavity sidewall (11) is provided with sidewall pull bar (7), and described sidewall pull bar (7) vertically prolongs the outside that rises to upper furnace body (9); The lower surface of incubation cavity base plate (12) connects base plate pull bar (13), and base plate pull bar (13) vertically prolongs the outside that rises to lower furnace body (5).
5. the thermal field of directional solidification method growth ingot casting polysilicon as claimed in claim 4; It is characterized in that: described incubation cavity base plate (12) and incubation cavity sidewall (11) simultaneously or move up and down separately, the internal diameter of described incubation cavity sidewall (11) is greater than the external diameter 5～20mm of incubation cavity base plate (12).
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732947A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Ingot thermal field for growing pure quasi-monocrystalline |
| CN102776564A (en) * | 2012-08-30 | 2012-11-14 | 晶科能源有限公司 | Polycrystalline silicon ingot furnace |
| CN103184516A (en) * | 2013-03-25 | 2013-07-03 | 湖南红太阳光电科技有限公司 | Polysilicon ingot casting thermal-field structure and method capable of reducing shadows and hard spots |
| CN103469293A (en) * | 2013-09-02 | 2013-12-25 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon |
| CN103614770A (en) * | 2013-11-20 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Novel ingot furnace and production technology using ingot furnace |
| CN103741214A (en) * | 2014-01-28 | 2014-04-23 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting process |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732947A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Ingot thermal field for growing pure quasi-monocrystalline |
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| CN102776564A (en) * | 2012-08-30 | 2012-11-14 | 晶科能源有限公司 | Polycrystalline silicon ingot furnace |
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| CN103184516B (en) * | 2013-03-25 | 2015-07-01 | 湖南红太阳光电科技有限公司 | Polysilicon ingot casting thermal-field structure and method capable of reducing shadows and hard spots |
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| CN103469293B (en) * | 2013-09-02 | 2015-10-28 | 湖南红太阳光电科技有限公司 | A kind of preparation method of polysilicon |
| CN103614770A (en) * | 2013-11-20 | 2014-03-05 | 奥特斯维能源（太仓）有限公司 | Novel ingot furnace and production technology using ingot furnace |
| CN103741214A (en) * | 2014-01-28 | 2014-04-23 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon ingot casting process |
| CN103741214B (en) * | 2014-01-28 | 2015-12-30 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon casting ingot process |
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Application publication date: 20120425 |