CN109402734A - Crystal silicon ingot casting heater and its application method - Google Patents
Crystal silicon ingot casting heater and its application method Download PDFInfo
- Publication number
- CN109402734A CN109402734A CN201811389892.3A CN201811389892A CN109402734A CN 109402734 A CN109402734 A CN 109402734A CN 201811389892 A CN201811389892 A CN 201811389892A CN 109402734 A CN109402734 A CN 109402734A
- Authority
- CN
- China
- Prior art keywords
- heater
- ingot casting
- side upper
- silicon ingot
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 238000005266 casting Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 241000270295 Serpentes Species 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- 206010037660 Pyrexia Diseases 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 7
- 239000002210 silicon-based material Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005265 energy consumption Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention relates to a kind of crystal silicon ingot casting heaters, including top heater；Side heater, including side upper heater and side lower heater, wherein the side upper heater and top heater connect to form series unit, the series unit and side lower heater independently connect power supply.Above-mentioned crystal silicon ingot casting heater, side heater is divided into two parts, a part independent connection power supply, another part is connected with top heater, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexibly control side heater to silicon material radiations heat energy, optimize the long brilliant time-consuming and ingot casting period.Also propose a kind of application method of above-mentioned heater.
Description
Technical field
The present invention relates to silicon ingot ingot casting preparation fields, more particularly to a kind of crystal silicon ingot casting heater and its application method.
Background technique
Crystallographic orientation casting polysilicon ingot process is simply easy to industrialized production, and output yield is big, and opposite production cost
It is low, so casting polysilicon is most popular solar energy materials.However compared with traditional thermal power generation, photovoltaic
Cost of electricity-generating is still higher, therefore still needs to advanced optimize polycrystalline silicon casting ingot process, improves output, improves polycrystal silicon ingot matter
Amount improves photoelectric conversion efficiency, and then reduces cost for solar power generation.
The long crystalline substance of directional solidification is to conduct heat downwards by cold and hot swap block (DSS block), while by polycrystalline silicon ingot or purifying furnace
Heating system heat compensation grow the different columnar-shaped polycrystalline of crystal orientation to form longitudinal temperature gradient in melted silicon
Silicon.But actual ingot casting process not only has biggish longitudinal temperature gradient in melted silicon, and there are also obvious transverse temperature ladders
Degree, long crystal boundary face is rough " W " shape, and there are in more thermal stress and polycrystal silicon ingot in crystal during ingot casting
Form the major reason of dislocation bundles.The heating systems of polycrystalline silicon ingot or purifying furnace include top heater and side heater, small part
It further include bottom heater in ingot furnace, top side bottom heater is parallel with one another, in heat-insulation cage opening procedure, respectively from top side
To silicon solution heat compensation, but as crystal is constantly grown, the heat that melted silicon receives the radiation of top side portion heater is got over for bottom
Come more, conducts that heat is slower and slower outward by DSS block, the longitudinal temperature gradient in melted silicon reduces, and long crystalline substance speed can be got over
Come slower, the long brilliant time-consuming and ingot casting period is constrained, to influence ingot casting energy consumption and production cost.
Summary of the invention
Based on this, it is necessary to for the long brilliant time-consuming problem long with the ingot casting period is kept, provide a kind of crystal silicon ingot casting heating
Device and its application method.
A kind of crystal silicon ingot casting heater, including
Top heater；
Side heater, including side upper heater and side lower heater, wherein the side upper heater and top
Heater connects to form series unit, and the series unit and side lower heater independently connect power supply.
Above-mentioned crystal silicon ingot casting heater, side heater are divided into two parts, a part independent connection power supply, another part with
Top heater series connection, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexibly control
Side heater optimizes the long brilliant time-consuming and ingot casting period to silicon material radiations heat energy.
The series unit is connected to three-phase alternating-current supply in one of the embodiments, and the side lower heater connects
It is connected to different three-phase alternating-current supplies.
The top heater includes in conplane 2 snake types arranged side by side in one of the embodiments,
Heater, the two sides of each snakelike heater are respectively arranged with 2 S type heaters, and the side upper heater is along the circumferential direction
It is evenly equipped at 4, each side upper heater includes 2 U-shaped heaters arranged side by side, at the top heater and described 4
Side upper heater form two series connection subelements, wherein each subelement of connecting is by the 2 of 1 snakelike heater and its two sides
A S type heater connects the U-shaped heater that 4 are arranged successively to be formed, on 2 S type heaters in the series connection subelement
It is connected separately with graphite electrode.
In one of the embodiments, in the series connection subelement, along the circumferencial direction, the adjacent U-shaped heating
Device is sequentially connected in series by S type heater or snake type heater, wherein the both ends of the snake type heater pass through a switching respectively
Plate is connected to U-shaped heater, and the both ends of S type heater pass through a pinboard respectively and are connected to U-shaped heater.
The width for the pinboard that the S type heater is connected in one of the embodiments, and the width of S type heater
Difference is less than 10 millimeters.
The inner surface of the inner surface of the side upper heater and the side lower heater in one of the embodiments,
It is in the same plane.
The distance between the side upper heater and the side lower heater are 10 millis in one of the embodiments,
Rice~60 millimeters.
The resistance of the side lower heater is heated no more than side upper heater and top in one of the embodiments,
The sum of concatenated resistance of device；The resistance of the side upper heater is less than side upper heater and the concatenated resistance of top heater
The sum of 1/2.
The application method of above-mentioned crystal silicon ingot casting heater, comprising steps of
In the long brilliant first stage, the heating power of the side lower heater is made to be greater than the fever of the side upper heater
Power；
In long brilliant second stage, gradually decreases the heating power of the side lower heater or close under the side and heat
Device.
The above method avoids the appearance of " cold-wall effect " in the long brilliant heating power for increasing side lower heater early period, long
Brilliant stage is reduced or switched off the heating power of side lower heater, and side upper heater is used only, and accelerates heat in silicon crystal
Scatter and disappear, while optimizing the temperature gradient in long brilliant later period melted silicon and long brilliant rate, make the long brilliant rate fluctuation of long brilliant process compared with
It is small, optimize the long brilliant time-consuming and ingot casting period, reduces silicon crystal Dislocations density, reduce production energy consumption and cost, further mention
High Ingot quality.
In one of the embodiments, in long brilliant first stage, the side lower heater and the side upper heater
Heating power ratio be not less than 4.5:2；In long brilliant second stage, the heating power of the side lower heater and the side
The ratio of the heating power of upper heater is not more than 1:2.
Detailed description of the invention
Fig. 1 is the schematic perspective view of the heater of one embodiment of the invention；
Fig. 2 is the heater of one embodiment of the invention and the assembling schematic diagram of graphite crucible；
Fig. 3 is the connection schematic diagram of top heater and side upper heater in the heater of one embodiment of the invention；
Fig. 4 is the schematic top plan view of structure shown in Fig. 3；
Fig. 5 and Fig. 6 is respectively the side schematic view of the different angle of structure shown in Fig. 3；
Fig. 7 is that the cross section PL of the polycrystalline silicon ingot according to made from the application method of the heater of the embodiment of the present invention illustrates
Figure；And
Fig. 8 is that the sub- longevity is lacked in the cross section of the polycrystalline silicon ingot according to made from the application method of the heater of the embodiment of the present invention
Life figure.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited by the specific embodiments disclosed below.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
With reference to Fig. 1, one embodiment of the invention discloses a kind of crystal silicon ingot casting heater, including top heater 10 and side
Portion's heater 20.Side heater 20 includes side upper heater 210 and side lower heater 220, wherein side upper heater
210 and top heater 10 series connection form series unit, wherein series unit and side lower heater 220 independently connect electricity
Source.In other words, it in the present embodiment, is controlled using dual power supply.The electricity of top heater 10 and side heater 20 in ingot furnace
Pole installation site can be consistent with the graphite heater that traditional single supply controls.When dual power supply controls, crystal silicon ingot casting heater
Nominal total power be not less than single supply when nominal total power.
Side upper heater 210 and top heater 10 constitute series unit, the series unit and side lower heater 220
The energy independent control on circuit, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexible
Side heater 20 is controlled to silicon material radiations heat energy, to optimize the long brilliant time-consuming and ingot casting period.Specifically, can be before long crystalline substance
Phase increases the heating power of side lower heater 220, the appearance of " cold-wall effect " is avoided, to weaken side forming core effect；It is long
Brilliant stage is reduced or switched off the heating power of side lower heater 220, and side upper heater 210 is used only, and accelerates silicon crystal
Middle heat scatters and disappears, while optimizing the temperature gradient in long brilliant later period melted silicon and long brilliant rate, makes the long brilliant rate of long brilliant process
Fluctuate smaller, optimize the long brilliant time-consuming and ingot casting period, reduce silicon crystal Dislocations density, reduce production energy consumption and cost, more into
One step improves Ingot quality.In addition side upper heater 210 is connected with top, can increase the total heat release power in side, reduces top
The heating power (a part of heating power has given side upper heater 210) of portion's heater 10, optimizes long crystal boundary face, avoids crystalline substance
The appearance of crystallite in body can also reduce the thermal stress in crystal, reduce silicon ingot evolution crackle ratio.
According to some embodiments of the present invention, side upper heater 220 and top heater 10 are connected to three-phase alternating current
Source, side lower heater 220 are connected to different three-phase alternating-current supplies, to realize the independent control on circuit.Such as Fig. 1 institute
Show, is connected with 4 the first graphite electrodes 110 on the series unit of side upper heater 220 and the composition of top heater 10, to
It is connected to three-phase alternating-current supply.
According to some embodiments of the present invention, top heater 10 includes in conplane 2 snakes arranged side by side
Type heater 120, the two sides of each snakelike heater 120 are respectively arranged with 2 S type heaters 130.Side upper heater 210
It is provided at 4.Each side upper heater 210 includes 2 U-shaped heaters 211 arranged side by side.Top heater 10 and side
Upper heater 210 forms two series connection subelements, wherein each subelement of connecting is by the 2 of 1 snakelike heater 120 and its two sides
A S type heater 130 forms the 4 U-shaped heater 211 being sequentially arranged series connection, and 2 S types in the series connection subelement add
The first graphite electrode 110 is connected separately on hot device 130.Side lower heater 220 is arranged to snakelike, and both ends are connected separately with
Second graphite electrode 221.
Specifically, 2 snake type heaters 120 are placed side by side as shown in Fig. 1, Fig. 3 to Fig. 6, and each 2 snake types heat
2 S type heaters 130 are respectively set in the two sides of device 120.In this way, 4 S type heaters 130 and 2 snake type heaters on the whole
120 is circumferentially disposed on the whole and substantially surround rectangle, wherein 4 S type heaters 130 form an opposite side of rectangle, 2
Part snake type heater 120 then forms another opposite side of rectangle.8 U-shaped heaters 211 are then uniformly respectively in four sides of rectangle
At side, i.e. each side is arranged side by side 2 U-shaped heaters 211.As shown in figure 4, be located at left side snake type heater 120 and
4 U-shaped heaters 211 are together in series to form sub-series list by 2 S type heaters 130 of about 120 two sides of snake type heater altogether
First a and b.In schematic perspective view shown in FIG. 1, the generally lower arrangement of two series connection subelements a and b.Vertical view shown in Fig. 4
In schematic diagram, two series connection subelements a and b or so are arranged side by side.
Further, it connects in subelement, along the circumferencial direction, adjacent U-shaped heater 211 passes through snake type heater
120 or S type heater 130 is sequentially connected in series, and wherein the both ends of snake type heater 120 pass through a pinboard 40 respectively and are connected to U
Type heater 211, the both ends of S type heater 130 pass through a pinboard 40 respectively and are connected to U-shaped heater 2021.With reference to figure
1, Fig. 4 is located in the middle 2 U-shaped heating in 4 U-shaped heaters 211 in the subelement a that connects by taking the subelement a that connects as an example
Each own end of device 211 is connected with pinboard 40, and two pinboards 40 are connect with the both ends of snake type heater 120 respectively.
In this way, two intermediate U-shaped heaters 211 are together in series by snake type heater 120.Similar, S type heater 130 is by turning
The remaining one end of 2 intermediate U-shaped heaters 211 is connected to the U-shaped heater 211 positioned at outside by fishplate bar.In this way, 4
A U-shaped heater 211 forms series connection subelement a by 1 snake type heater 120 and 2 S type heaters 130.For sub-series
Unit b, connection type is similar with series connection subelement a, repeats no more.
Further, the width of the width and S type heater 130 of the pinboard 40 that the S type heater 130 is connected is poor
Less than 10 millimeters, which can guarantee that thermal power is more evenly distributed, while guarantee that the side in side heater and ingot furnace is protected
The spacing of Wen Ping is within safe distance.
Further, the equivalent width of the amplitude of side lower heater 220 and U-shaped heater 211.As shown in Figure 1, side
Lower heater 220 is snakelike heater, the U of amplitude (i.e. the height) and composition side upper heater 210 of each snakelike heater
The equivalent width of type heater 211.The structure can make the radiant heat of U-shaped heater 211 be mainly distributed on the middle and upper part of silicon material.
In above-described embodiment, top heater 10 includes the heater of S type and U-shaped two kinds of shapes, side upper heater 210
Then it is made of U-shaped heater 211.It is to be appreciated that can be the heating of selection other shapes according to ingot furnace thermal field feature
Device, such as class ellipse or rectangle etc..
According to some embodiments of the present invention, the interior table of the inner surface of side upper heater 210 and side lower heater 220
Face is in the same plane, guarantees side heater that side upper heater 210 and side lower heater 220 form surface everywhere
It is consistent with crucible spacing, and with crucible and side heat protection screen spacing within safe distance.Inner surface herein refers on side
Heater 210 or side lower heater 220 to the surface opposite with graphite crucible 40.As shown in Fig. 2, working as side heater
After 20 assemble with graphite crucible 50, the inner surface of side upper heater 210 and the inner surface of side lower heater 220 are collectively formed
The inner wall in the surrounded space of side heater 20.
According to some embodiments of the present invention, the width of side lower heater 220 and side upper heater 210 and width are poor
Less than 50 millimeters, guarantee U-shaped 211 thermal radiation distribution of heater in the middle and upper part of silicon material.Add under side upper heater 210 and side
The distance between hot device 220 is 10 millimeters~60 millimeters.
According to some embodiments of the present invention, the material of side upper heater 210 and side lower heater 220 is CC fiber
Plate or graphite.It is to be appreciated that material can want heater resistance value according to the resistance characteristic and ingot furnace thermal field of material itself
Ask determining.
According to some embodiments of the present invention, the resistance of side lower heater 220 is no more than side upper heater 210 and top
The sum of concatenated resistance of portion's heater 10；The resistance of side upper heater 210 is less than side upper heater 210 and top heater
The 1/2 of the sum of 10 concatenated resistance.By the power distribution on regulation top and side, keep long crystal boundary face gentler, long brilliant consumption
When regulation it is more effective.
One embodiment of the invention also proposed a kind of application method of the crystal silicon ingot casting heater of above-described embodiment.The party
Method includes the following steps.
S100, the brilliant first stage is being grown, the heating power of side lower heater 220 is made to be greater than side upper heater 210
Heating power.
According to rate of crystalline growth, long crystalline substance is broadly divided into two stages.First stage is to grow brilliant initial stage, in this stage,
The crystal height of generation is usually no more than the 30% of crystal height.In this stage, keep the heating power of side lower heater 220 big
In the heating power of side upper heater 210, to avoid the appearance of " cold-wall effect ", weaken side caused by " cold-wall effect "
Forming core improves long crystal boundary face.
S120, in long brilliant second stage, gradually decrease or the heating power of close side subordinate heater 220.Second stage
For the long brilliant middle and later periods, in this stage, by gradually decreasing the fever function of side lower heater 220, so that mainly utilizing side
The radiations heat energy into graphite crucible 50 of upper heater 210；Or close side subordinate heater 220, only it is applicable in side upper heater
210 into graphite crucible 50 radiations heat energy.In this way, accelerating scattering and disappearing for heat in silicon crystal, accelerates long brilliant speed, reach optimization length
The purpose of temperature gradient and long brilliant rate in brilliant later period silicon solution.Meanwhile long brilliant rate fluctuation is smaller during long crystalline substance, silicon wafer
Residual thermal stress is smaller in body, reduces silicon crystal Dislocations density, reduces production energy consumption and cost, further improves silicon ingot matter
Amount.
According to some embodiments of the present invention, in long brilliant first stage, side lower heater 220 and side upper heater
210 heating power ratio is not less than 4.5:2；In long brilliant second stage, the heating power and side of side lower heater 210
The ratio of the heating power of heater 10 is not more than 1:2.
Below with reference to one embodiment, illustrate the crystal silicon ingot casting heater and its application method of the embodiment of the present invention.
In one embodiment, crystal silicon ingot casting heater includes top heater 10 and side heater.Side heater 20
Including side upper heater 210 and side lower heater 220.Top heater 10 includes in conplane arranged side by side
2 snake type heaters 120, the two sides of each snakelike heater 120 are respectively arranged with 2 S type heaters 130.It is heated on side
Device 210 includes 8 circumferentially disposed U-shaped heaters 210.Top heater 10 and side upper heater 210 form two
A series connection subelement, wherein each series connection subelement is by 1 snakelike heater 120 and its 2 S type heaters 130 of two sides by 4
A series connection of U-shaped heater 211 being sequentially arranged is formed, and is connected separately with graphite the on 2 S type heaters in subelement of connecting
One graphite electrode.The width of pinboard 40 is 70 millimeters, and the pinboard length of different location can be variant.Snake type heater
The width of 120 and S type heater 130 is 70 millimeters.
The width of side upper heater 210 is 83 millimeters, with a thickness of 26 millimeters.But it may be noted that the side of different location
The wire length (total length after being unfolded) of upper heater can be different.The resistance and top heater 10 of side lower heater 220
It is equal with the sum of the resistance of side upper heater 210, and the resistance ratio of the resistance of side upper heater 210 and top heater 10
For 1:2.
When crystal silicon ingot casting heater is installed to ingot furnace, in conjunction with Fig. 2, the lower edge of side lower heater 220 is apart from stone
Spacing between black bottom plate is 25 millimeters, between the safety between the top edge and side upper heater 210 of side lower heater 220
Away from being 30 millimeters.The top edge of side upper heater 210 is then higher than 20 millimeters of the upper surface of graphite crucible 40.Side upper heater
210 inner surface and the inner surface of side lower heater 220 are in same plane.
Long crystalline substance early period, side lower heater 220 and 210 heating power ratio of side upper heater are 5.5:4.5；In long crystalline substance
Later period is gradually reduced the heating power of side lower heater 2120；Brilliant later period side lower heater 220 will be grown and heated on side
210 heating power Ratio control of device is in 1:4；Crystalline substance latter stage is grown, then close side subordinate heater 220.Measuring and calculating shows that the ingot casting period is
85 hours, be to shorten 7 hours in 92 hours compared with the production cycle same period.In addition, as shown in Figure 7 and Figure 8, utilizing above-mentioned crystal silicon heater
Side forming core caused by the polysilicon crystal " cold-wall effect " of casting obviously weakens, and long crystal boundary face is in dimpling shape, in the ingot of surrounding
Do not occur black dislocation bundles, intermediate small side's spindle position mistake distribution is consistent with normal silicon ingot.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of crystal silicon ingot casting heater, which is characterized in that including
Top heater；
Side heater, including side upper heater and side lower heater, wherein the side upper heater and top heating
Device connects to form series unit, and the series unit and side lower heater independently connect power supply.
2. crystal silicon ingot casting heater according to claim 1, which is characterized in that the series unit is connected to three-phase alternating current
Power supply, the side lower heater are connected to different three-phase alternating-current supplies.
3. crystal silicon ingot casting heater according to claim 1, which is characterized in that the top heater includes in same
The arranged side by side 2 snake type heater of plane, the two sides of each snakelike heater are respectively arranged with 2 S type heaters, described
Side upper heater is along the circumferential direction evenly equipped at 4, and each side upper heater includes 2 U-shaped heaters arranged side by side, institute
It states the side upper heater at top heater and described 4 and forms two series connection subelements, wherein each series connection subelement is by 1
Snakelike heater and its 2 S type heaters of two sides connect the U-shaped heater that 4 are arranged successively to be formed, the sub-series list
Graphite electrode is connected separately on 2 S type heaters in member.
4. crystal silicon ingot casting heater according to claim 3, which is characterized in that in the series connection subelement, along the circle
Circumferential direction, the adjacent U-shaped heater are sequentially connected in series by S type heater or snake type heater, wherein the snake type heats
The both ends of device pass through a pinboard respectively and are connected to U-shaped heater, and the both ends of S type heater pass through a pinboard respectively and connect
It is connected to U-shaped heater.
5. crystal silicon ingot casting heater according to claim 4, which is characterized in that the switching that the S type heater is connected
The width of plate and the width difference of S type heater are less than 10 millimeters.
6. crystal silicon ingot casting heater according to claim 1, which is characterized in that the inner surface of the side upper heater and
The inner surface of the side lower heater is in the same plane.
7. crystal silicon ingot casting heater according to claim 1, which is characterized in that the side upper heater and the side
The distance between lower heater is 10 millimeters~60 millimeters.
8. crystal silicon ingot casting heater according to claim 1, which is characterized in that the resistance of the side lower heater is little
In the sum of side upper heater and the concatenated resistance of top heater；The resistance of the side upper heater, which is less than on side, to be heated
The 1/2 of the sum of device and the concatenated resistance of top heater.
9. a kind of application method of crystal silicon ingot casting heater as described in claim 1, which is characterized in that
In the long brilliant first stage, the heating power of the side lower heater is made to be greater than the fever function of the side upper heater
Rate；
In long brilliant second stage, gradually decreases the heating power of the side lower heater or close the side lower heater.
10. according to the method described in claim 9, it is characterized in that, growing brilliant first stage, the side lower heater and institute
The heating power ratio of side upper heater is stated not less than 4.5:2；In long brilliant second stage, the fever of the side lower heater
The ratio of the heating power of power and the side upper heater is not more than 1:2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811389892.3A CN109402734A (en) | 2018-11-21 | 2018-11-21 | Crystal silicon ingot casting heater and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811389892.3A CN109402734A (en) | 2018-11-21 | 2018-11-21 | Crystal silicon ingot casting heater and its application method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109402734A true CN109402734A (en) | 2019-03-01 |
Family
ID=65474493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811389892.3A Pending CN109402734A (en) | 2018-11-21 | 2018-11-21 | Crystal silicon ingot casting heater and its application method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109402734A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257907A (en) * | 2019-08-01 | 2019-09-20 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace of layered temperature control |
| CN110565163A (en) * | 2019-10-17 | 2019-12-13 | 晶科能源有限公司 | Ingot casting heater and ingot casting furnace |
| CN111254493A (en) * | 2020-03-04 | 2020-06-09 | 浙江晶阳机电股份有限公司 | Improved heating structure and heating method for silicon core ingot furnace |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330148A (en) * | 2011-07-30 | 2012-01-25 | 常州天合光能有限公司 | Polysilicon ingot casting method with low defect and high output and thermal field structure thereof |
| CN204779921U (en) * | 2015-06-04 | 2015-11-18 | 浙江精功科技股份有限公司 | Novel polycrystalline silicon side layering heating device |
| CN106048718A (en) * | 2016-08-19 | 2016-10-26 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon semi-casting ingot impurity removing method |
| CN107523867A (en) * | 2017-10-16 | 2017-12-29 | 镇江环太硅科技有限公司 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN107699943A (en) * | 2017-11-16 | 2018-02-16 | 江苏协鑫硅材料科技发展有限公司 | Prepare the heater and ingot furnace of crystalline silicon ingot |
| CN209456615U (en) * | 2018-11-21 | 2019-10-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater |
-
2018
- 2018-11-21 CN CN201811389892.3A patent/CN109402734A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330148A (en) * | 2011-07-30 | 2012-01-25 | 常州天合光能有限公司 | Polysilicon ingot casting method with low defect and high output and thermal field structure thereof |
| CN204779921U (en) * | 2015-06-04 | 2015-11-18 | 浙江精功科技股份有限公司 | Novel polycrystalline silicon side layering heating device |
| CN106048718A (en) * | 2016-08-19 | 2016-10-26 | 西安华晶电子技术股份有限公司 | Polycrystalline silicon semi-casting ingot impurity removing method |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN107523867A (en) * | 2017-10-16 | 2017-12-29 | 镇江环太硅科技有限公司 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
| CN107699943A (en) * | 2017-11-16 | 2018-02-16 | 江苏协鑫硅材料科技发展有限公司 | Prepare the heater and ingot furnace of crystalline silicon ingot |
| CN209456615U (en) * | 2018-11-21 | 2019-10-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257907A (en) * | 2019-08-01 | 2019-09-20 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace of layered temperature control |
| CN110565163A (en) * | 2019-10-17 | 2019-12-13 | 晶科能源有限公司 | Ingot casting heater and ingot casting furnace |
| CN111254493A (en) * | 2020-03-04 | 2020-06-09 | 浙江晶阳机电股份有限公司 | Improved heating structure and heating method for silicon core ingot furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120118228A1 (en) | Sapphire ingot grower | |
| CN109402734A (en) | Crystal silicon ingot casting heater and its application method | |
| CN102289235B (en) | Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN202030861U (en) | Heating device for polycrystalline silicon crystal growing furnace | |
| CN203923445U (en) | A kind of single crystal growing furnace combination heater | |
| CN107523864A (en) | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace | |
| CN106757338B (en) | The graphite heater and polycrystalline silicon ingot or purifying furnace of polycrystalline silicon ingot or purifying furnace | |
| CN209456615U (en) | Crystal silicon ingot casting heater | |
| CN109056062A (en) | A kind of preparation method of casting monocrystalline silicon | |
| Su et al. | Numerical investigation of bottom grille for improving large-size silicon quality in directional solidification process | |
| CN104372407A (en) | Equipment and method for directional solidification growth of crystalline silicon | |
| CN207646330U (en) | Crystal ingot casting heater and casting unit | |
| CN102787349B (en) | Ingot casting crucible and ingot casting device | |
| CN102912414B (en) | A kind of polycrystalline silicon ingot or purifying furnace and crucible thereof | |
| CN106637387B (en) | heater for pulling single crystal and pulling method | |
| CN103696002A (en) | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure | |
| CN202175745U (en) | Heating control system of polycrystalline silicon ingot furnace based on separate control at the top | |
| CN206512311U (en) | Polycrystalline silicon ingot or purifying furnace | |
| CN107699943A (en) | Prepare the heater and ingot furnace of crystalline silicon ingot | |
| CN103334154A (en) | Preparation method of polycrystalline silicon ingots based on thermal exchange technology | |
| CN205907394U (en) | Polycrystalline silicon ingot furnace is with six heating device | |
| CN110528063A (en) | A kind of crystal growing apparatus | |
| CN110565163A (en) | Ingot casting heater and ingot casting furnace | |
| CN110387579A (en) | A kind of method and casting single crystal silicon ingot using octagon ingot casting thermal field casting single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |