CN107523867A - A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace - Google Patents
A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN107523867A CN107523867A CN201710961981.XA CN201710961981A CN107523867A CN 107523867 A CN107523867 A CN 107523867A CN 201710961981 A CN201710961981 A CN 201710961981A CN 107523867 A CN107523867 A CN 107523867A
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- side heater
- layer side
- heater
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- connection
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace, it is related to photovoltaic apparatus ingot casting technology field, including heater top and side heater, side heater includes the upper layer side heater and lower layer side heater being square, upper layer side heater composes in parallel upper strata parallel units with heater top, lower layer side heater independent control, the upper layer side three-dimensional arm of connection is provided between heater top and upper layer side heater, the lower layer side arm of connection is provided between lower layer side heater and upper layer side heater, lower layer side arm is provided with to isolate both insulation spacers with upper layer side heater in crossover position.Upper layer side heater and heater top are formed parallel units, lower layer side heater independent control by the present invention, and side heater is divided into two layers of heating, and the spacing between two layers is adjustable, so as to effectively control thermograde up and down, eliminates shade；In the length brilliant later stage, lower layer side heater can be individually controlled to close, so as to reduce energy loss.
Description
Technical field
The present invention relates to photovoltaic apparatus ingot casting technology field, adds more particularly to a kind of layer-stepping side of polycrystalline silicon ingot or purifying furnace
Hot device.
Background technology
Polycrystalline silicon ingot or purifying furnace is the key equipment of photovoltaic industry middle and upper reaches, is mainly used in the life of solar-grade polysilicon ingot
Production.Core component of the heater as polycrystalline silicon ingot or purifying furnace, vital effect is played to thermal field control in stove.
In the prior art, the heater that ingot furnace generally uses has the heating of five faces（Heater top and side heater）With six faces
Heating（Heater top, side heater and bottom heater）Two kinds.But no matter which kind of heater, side heater using individual layer heat
Control, it can not flexibly control long brilliant thermograde.In the long brilliant later stage, side heater power is constant, and thermograde is by improving in crystal
Heat-insulation cage highly radiates maintenance, adds energy resource consumption.
The content of the invention
The present invention is directed to above-mentioned technical problem, a kind of the shortcomings that overcoming prior art, there is provided layering of polycrystalline silicon ingot or purifying furnace
Formula side heater, thermograde can be effectively controlled, reduce energy loss.
In order to solve the above technical problems, the present invention provides a kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace, including
Heater top and side heater, side heater includes the upper layer side heater being square and lower layer side heater, upper layer side add
Hot device composes in parallel upper strata parallel units, lower layer side heater independent control with heater top, and heater top heats with upper layer side
The upper layer side three-dimensional arm of connection is provided between device, the lower layer side of connection is provided between lower layer side heater and upper layer side heater
Arm, lower layer side arm are provided with to isolate both insulation spacers with upper layer side heater in crossover position.
Technique effect：Upper layer side heater and heater top are formed parallel units by the present invention, and lower layer side heater is independent
Control, side heater are divided into two layers of heating, and the spacing between two layers is adjustable, so as to effectively control thermograde up and down, eliminate
Shade；In the length brilliant later stage, lower layer side heater can be individually controlled to close, so as to reduce energy loss；In addition, multiple upper stratas are set
Side three-dimensional arm and lower layer side arm, be advantageous to improve the uniformity of thermal field and induction field.
The technical scheme that further limits of the present invention is：
Further, the phase current I of heater topTWith the phase current I of upper layer side heaterS-UPRelation meet 0.3IT<IS-UP<
2IT, the phase current of lower layer side heater adjusts with thermal field.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, heater top top and upper layer side heater top
Vertical range d1 between portion>Vertical range d2 between at the top of 10mm, upper layer side heater center and lower layer side heater>
0mm。
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, upper strata parallel units are connected using the electrode of three-phase three
Connect, the electrode of two-phase two connects, any one connected mode in the connection of the electrode of three-dimensional four.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, lower layer side heater are connected using the electrode of three-phase three
Connect, the electrode of two-phase two connects, any one connected mode in the connection of the electrode of three-phase four.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, upper strata parallel units and lower layer side heater it
Between using the electrode of three-phase three connection, the electrode of two-phase two connection, the electrode of three-dimensional four connection in any one connected mode.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, insulation spacer is using zirconia ceramics piece, nitrogen
Change any one in boron potsherd, alumina ceramic plate.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, heater top include three in rotational symmetry
Serpentine resistive piece, upper layer side heater include four snakelike side heater monomers and four snakelike connections with lower layer side heater
Gusset, snakelike side heater monomer have uniform snakelike cycle, the snakelike cycle of snakelike connecting corners and snakelike side heater
The signal period of monomer is identical, and snakelike connecting corners connect adjacent snakelike side heater monomer, and upper layer side three-dimensional arm sets three
Individual and section is in " 7 " font, and the both ends of its lateral projection position connect adjacent serpentine resistive piece respectively, its vertical extending part
End connects the snakelike side heater monomer of upper layer side heater.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, heater top include three in rotational symmetry
Serpentine resistive piece, upper layer side heater includes four tabular side heater monomers with lower layer side heater and four bendings are connected
Gusset, bending connecting corners connect adjacent tabular side heater monomer, and upper layer side three-dimensional arm sets three and section is in " 7 " word
Type, the both ends of its lateral projection position connect adjacent serpentine resistive piece, the end connection upper layer side of its vertical extending part respectively
The tabular side heater monomer of heater.
A kind of layer-stepping side heater of preceding described polycrystalline silicon ingot or purifying furnace, lower layer side arm sets three and section is in
" 7 " font, its vertical extending part, which is pressed close to, is provided with support slot at upper layer side heater, insulation spacer is L-shaped and is attached at branch
Hold in groove, upper layer side heater is arranged in support slot and insulation spacer inner side.
The beneficial effects of the invention are as follows：
（1）The snakelike side heater monomer of the present invention has rotational symmetry, and the top heating surface (area) (HS of every covering is equal, ensures
The uniformity of top heating；
（2）The present invention snakelike side heater monomer signal period and snakelike connecting corners snakelike cycle phase it is same, uniformly and
The snakelike cycle compacted ensure that the uniformity of heating, while ensure that the uniformity of corner heating；
（3）The lower layer side arm of the present invention can both connect lower layer side heater, can pass through support slot and " L " type felt pad again
Piece holds up upper layer side heater, and enough support strengths are provided for upper layer side heater, ensures that lower layer side arm adds with upper layer side
Hot device does not contact at overlapping position；
（4）The upper layer side three-dimensional arm of the present invention it is reasonable in design, while be connected to upper layer side heater and heater top,
The connected mode is effectively saved headroom；
（5）The corner area of the bending connecting corners covering of the present invention is smaller, both ensure that the intensity of bending connecting corners, and had protected again
It is uniform corner heating has been demonstrate,proved；
（6）The individual layer side heater of the present invention can be intensive snakelike, or template, add side heater intensity, prolong
The service life of heater is grown, it is strictly equal that serpentine configuration is often added heat cycle, ensures that thermal field is uniform.
Brief description of the drawings
Fig. 1 is the position view of heater top and side heater；
Fig. 2 is that the electrode of three-phase three connects circuit diagram；
Fig. 3 is that the electrode of two-phase two connects circuit diagram；
Fig. 4 is that the electrode of three-phase four connects circuit diagram；
Fig. 5 is the overall structure diagram of embodiment 1；
Fig. 6 is the insulation spacer schematic diagram of embodiment 1；
Fig. 7 is the overall structure diagram of embodiment 2；
Wherein：1st, heater top；1a, serpentine resistive piece；2nd, side heater；201st, upper layer side heater；202nd, lower layer side heats
Device；2a, snakelike side heater monomer；2b, snakelike connecting corners；2c, tabular side heater monomer；2d, bending connecting corners；3、
Upper layer side three-dimensional arm；4th, lower layer side arm；4a, support slot.
Embodiment
Embodiment 1
A kind of layer-stepping side heater for polycrystalline silicon ingot or purifying furnace that the present embodiment provides, structure is as shown in Fig. 1,5,6.
The layer-stepping side heater is applied to G6 top sides independent control dual power supply ingot furnace（Heat in 5 faces）, including top heating
Device 1 and side heater 2.Side heater 2 includes the upper layer side heater 201 and lower layer side heater 202 being square, upper layer side
Heater 201 composes in parallel upper strata parallel units, the independent control of lower layer side heater 202 with heater top 1.Heater top 1 pushes up
Vertical range d1 between portion and the top of upper layer side heater 201>10mm, the center of upper layer side heater 201 are heated with lower layer side
Vertical range d2 between the top of device 202>0mm, upper layer side heater 201 with lower layer side heater 202 same with can not put down
In face.
The connected mode of upper strata parallel units can use the connection of the electrode of three-phase three, the connection of the electrode of two-phase two, the electrode of three-dimensional four
Any one in connection.The connected mode of lower layer side heater 202, and upper strata parallel units and lower layer side heater 202
Between connected mode can use foregoing three kinds of modes in any one.The equivalent circuit diagram of three kinds of connected modes such as Fig. 2-
Shown in 4, wherein, RT is the equivalent resistance of heater top 1, and RS is the equivalent resistance of side heater 2, and B and B' is same phase.The electrode of three-phase three
The connection phase for connecting connection end A, B/B', C for being connected with the electrode of three-phase four differs 120 ° of AC power, the connection of two-phase electrode
Connection end A, B can be AC power or dc source, the connection end B and B' of the electrode connection method of three-dimensional four connects same phase.Top heating
The phase current I of device 1TWith the phase current I of upper layer side heater 201S-UPRelation meet 0.3IT<IS-UP<2IT, lower layer side heater
202 phase current adjusts with thermal field.
Heater top 1 includes three serpentine resistive piece 1a in rotational symmetry.Upper layer side heater 201 heats with lower layer side
Device 202 includes four snakelike side heater monomer 2a and four snakelike connecting corners 2b, and snakelike connecting corners 2b connections are adjacent
Snakelike side heater monomer 2a.Snakelike side heater monomer 2a has the uniform snakelike cycle, and snakelike connecting corners 2b's is snakelike
Cycle is identical with snakelike side heater monomer 2a signal period.
Three upper layer side three-dimensional arms of connection are provided between the heater top 1 and upper layer side heater 201 of the present embodiment
3, i.e., connected within heat-insulation layer, connect copper electrode beyond heat-insulation layer.The section of upper layer side three-dimensional arm 3 is in " 7 " font, and its level is convex
The both ends for going out position connect adjacent serpentine resistive piece 1a, the end connection upper layer side heater 201 of its vertical extending part respectively
Snakelike side heater monomer 2a.In addition to the aforementioned manner of the present embodiment, it can also use and be flexible coupling beyond heat-insulation layer, Ran Houjie
The mode of copper electrode, is not explained in detail herein.
Three lower layer side arms 4 of connection are provided between lower layer side heater 202 and upper layer side heater 201.Lower layer side
The section of arm 4 is in " 7 " font, and its vertical extending part is provided with support slot 4a with upper layer side heater 201 in crossover position.Lower floor
Side arm 4 is provided with insulation spacer that is L-shaped and being attached in support slot 4a, and upper layer side heater 201 is arranged in support slot
4a and insulation spacer inner side.Insulation spacer can use any in zirconia ceramics piece, boron nitride ceramics piece, alumina ceramic plate
One kind, upper layer side heater 201 to be isolated with lower layer side arm 4.
Embodiment 2
A kind of layer-stepping side heater for polycrystalline silicon ingot or purifying furnace that the present embodiment provides, structure are as shown in Figure 7.
The layer-stepping side heater is applied to G6 top sides independent control dual power supply ingot furnace（Heat in 5 faces）, with embodiment 1
Difference is：Upper layer side heater 201 includes four tabular side heater monomer 2c and four foldings with lower layer side heater 202
Curved connecting corners 2d, the adjacent tabular side heater monomer 2c of bending connecting corners 2d connections.The vertical of upper layer side three-dimensional arm 3 prolongs
The tabular side heater monomer 2c of the end connection upper layer side heater 201 of extending portion position.
Embodiment 1, the shape that embodiment 2 is two preferred embodiments, heater top 1 and upper layer side heater 201
Change, as long as upper layer side heater 201 forms parallel units, the independent control of lower layer side heater 202 with heater top 1.
Heater structure provided by the invention, available for the dual power supply ingot furnace of existing G6, G7, G8 top side independent control or top,
Side, three power supply ingot furnaces of bottom independent control.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domains of application claims.
Claims (10)
1. a kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace, including heater top（1）With side heater（2）, its feature exists
In：The side heater（2）Including the upper layer side heater being square（201）With lower layer side heater（202）, the upper strata
Side heater（201）With heater top（1）Compose in parallel upper strata parallel units, the lower layer side heater（202）Independent control,
The heater top（1）With upper layer side heater（201）Between be provided with connection some upper layer side three-dimensional arms（3）, under described
Layer side heater（202）With upper layer side heater（201）Between be provided with connection some lower layer side arms（4）, the lower layer side
Arm（4）With upper layer side heater（201）It is provided with crossover position to isolate both insulation spacers.
A kind of 2. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The top adds
Hot device（1）Phase current ITWith upper layer side heater（201）Phase current IS-UPRelation meet 0.3IT<IS-UP<2IT, under described
Layer side heater（202）Phase current adjusted with thermal field.
A kind of 3. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The top adds
Hot device（1）Top and upper layer side heater（201）Vertical range d1 between top>10mm, the upper layer side heater（201）
Center and lower layer side heater（202）Vertical range d2 between top>0mm.
A kind of 4. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The upper strata
Parallel units are using any one connected mode in the connection of the electrode of three-phase three, the connection of the electrode of two-phase two, the connection of the electrode of three-dimensional four.
A kind of 5. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 4, it is characterised in that：The lower floor
Side heater（202）Using any one connection in the connection of the electrode of three-phase three, the connection of the electrode of two-phase two, the connection of the electrode of three-phase four
Mode.
A kind of 6. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 5, it is characterised in that：On described
Layer parallel units and lower layer side heater（202）Between using the electrode of three-phase three connection, the electrode of two-phase two connection, the electrode of three-dimensional four
Any one connected mode in connection.
A kind of 7. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The insulation
Pad is using any one in zirconia ceramics piece, boron nitride ceramics piece, alumina ceramic plate.
A kind of 8. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The top adds
Hot device（1）Including three serpentine resistive pieces in rotational symmetry（1a）, the upper layer side heater（201）With lower layer side heater
（202）Include four snakelike side heater monomers（2a）With four snakelike connecting corners（2b）, the snakelike side heater list
Body（2a）With uniform snakelike cycle, the snakelike connecting corners（2b）Snakelike cycle and snakelike side heater monomer（2a）
Signal period it is identical, the snakelike connecting corners（2b）Connect adjacent snakelike side heater monomer（2a）, the upper layer side three
To arm（3）It is in " 7 " font to set three and section, and the both ends of its lateral projection position connect adjacent serpentine resistive piece respectively
（1a）, the end connection upper layer side heater of its vertical extending part（201）Snakelike side heater monomer（2a）.
A kind of 9. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that：The top adds
Hot device（1）Including three serpentine resistive pieces in rotational symmetry（1a）, the upper layer side heater（201）With lower layer side heater
（202）Include four tabular side heater monomers（2c）With four bending connecting corners（2d）, the bending connecting corners
（2d）Connect adjacent tabular side heater monomer（2c）, the upper layer side three-dimensional arm（3）It is in " 7 " word to set three and section
Type, the both ends of its lateral projection position connect adjacent serpentine resistive piece respectively（1a）, the end of its vertical extending part connects
Layer side heater（201）Tabular side heater monomer（2c）.
A kind of 10. layer-stepping side heater of polycrystalline silicon ingot or purifying furnace according to claim 8 or claim 9, it is characterised in that：It is described
Lower layer side arm（4）It is in " 7 " font to set three and section, and its vertical extending part presses close to upper layer side heater（201）Place is set
There is support slot（4a）, the insulation spacer is L-shaped and is attached at support slot（4a）It is interior, the upper layer side heater（201）Card
Located at support slot（4a）With insulation spacer inner side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710961981.XA CN107523867A (en) | 2017-10-16 | 2017-10-16 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710961981.XA CN107523867A (en) | 2017-10-16 | 2017-10-16 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193266A (en) * | 2018-03-19 | 2018-06-22 | 镇江环太硅科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace top side heater |
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
| CN108330537A (en) * | 2018-03-12 | 2018-07-27 | 江苏高照新能源发展有限公司 | A kind of close period polycrystalline silicon ingot casting furnace side heater |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
| CN110257907A (en) * | 2019-08-01 | 2019-09-20 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace of layered temperature control |
| CN111850683A (en) * | 2020-07-31 | 2020-10-30 | 刘穗 | Heat balance's high-efficient type ingot furnace |
| CN111945222A (en) * | 2020-08-14 | 2020-11-17 | 刘穗 | Ingot furnace with tail gas treatment function |
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| CN203320177U (en) * | 2013-06-18 | 2013-12-04 | 浙江省机电设计研究院有限公司 | Double-heater polysilicon ingot casting furnace heating system |
| CN207276779U (en) * | 2017-10-16 | 2018-04-27 | 镇江环太硅科技有限公司 | The layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
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| CN201165563Y (en) * | 2007-11-12 | 2008-12-17 | 中国电子科技集团公司第四十八研究所 | Graphitic heater for polysilicon casting ingot technology |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108330537A (en) * | 2018-03-12 | 2018-07-27 | 江苏高照新能源发展有限公司 | A kind of close period polycrystalline silicon ingot casting furnace side heater |
| CN108330537B (en) * | 2018-03-12 | 2023-09-05 | 江苏美科太阳能科技股份有限公司 | Side heater of dense-period polycrystalline silicon ingot furnace |
| CN108193266A (en) * | 2018-03-19 | 2018-06-22 | 镇江环太硅科技有限公司 | A kind of polycrystalline silicon ingot or purifying furnace top side heater |
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
| CN110257907A (en) * | 2019-08-01 | 2019-09-20 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace of layered temperature control |
| CN111850683A (en) * | 2020-07-31 | 2020-10-30 | 刘穗 | Heat balance's high-efficient type ingot furnace |
| CN111850683B (en) * | 2020-07-31 | 2021-12-24 | 扬州晶樱光电科技有限公司 | Heat balance's high-efficient type ingot furnace |
| CN111945222A (en) * | 2020-08-14 | 2020-11-17 | 刘穗 | Ingot furnace with tail gas treatment function |
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Application publication date: 20171229 |
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