CN110257907A - A kind of polycrystalline ingot furnace of layered temperature control - Google Patents
A kind of polycrystalline ingot furnace of layered temperature control Download PDFInfo
- Publication number
- CN110257907A CN110257907A CN201910707552.9A CN201910707552A CN110257907A CN 110257907 A CN110257907 A CN 110257907A CN 201910707552 A CN201910707552 A CN 201910707552A CN 110257907 A CN110257907 A CN 110257907A
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- Prior art keywords
- heater
- side heater
- temperature control
- polycrystalline ingot
- cooling bench
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of polycrystalline ingot furnaces of layered temperature control, including furnace body, the cooling bench set on the bottom of furnace body, to place silicon material and the heater between the furnace interior and the cooling bench periphery；The heater includes set on the cooling bench circumference and multiple side heaters along furnace body short transverse setting and the top heater above the side heater and the cooling bench；Multiple side heaters are separately connected different power supply modules in order to control the heating temperature of any side heater respectively.The polycrystalline ingot furnace of above-mentioned layered temperature control can it is more accurate adjustment furnace body in thermal field temperature gradient, the speed of production of accurate control polycrystal silicon ingot, it is slow and reduce the dislocation multiplication of silicon ingot middle and upper part to solve silicon ingot later period long brilliant speed, improve middle and upper part silicon ingot at crystalloid amount and battery conversion efficiency.
Description
Technical field
The present invention relates to photovoltaic field, in particular to a kind of polycrystalline ingot furnace of layered temperature control.
Background technique
During the polycrystalline cast ingot of solar energy industry, the crucible for filling high-purity silicon material can be put into polycrystalline ingot furnace, be led to
Heater electrified regulation is crossed, silicon material is made all to be fused into melted silicon.Then, it by opening popular or promoting side heat-insulation cage, drops
Low condensing platen temperature reduces melted silicon temperature in crucible indirectly simultaneously, and then starts crystal nucleation and growth.
The heater of polycrystalline ingot furnace is typically distributed on the surrounding of crucible at present, the top of crucible and side totally five faces into
Row heating is provided with individual a set of graphite heater there are also table below crucible simultaneously and is independently controlled, formed
The thermal field structure of six faces heating.These crucible tops, side or the heater of bottom generally use graphite or carbon-to-carbon material, adopt
It is heated with plate or tubulose.Most side heaters are mostly single layer structure in current ingot furnace, it is difficult to be utilized
Side heater adjusts temperature of thermal field gradient, is unfavorable for the long brilliant speed control of long crystalline substance process in casting ingot process, directly affects ingot casting
Efficiency and ingot quality.
Therefore, how accurately to control the temperature gradient in polycrystalline ingot furnace and then control long brilliant speed, improve into crystalloid amount
As those skilled in the art's technical issues that need to address.
Summary of the invention
The object of the present invention is to provide a kind of polycrystalline ingot furnace of layered temperature control, which can accurately adjust heat
Field temperature gradient, the long brilliant speed of control silicon ingot, is improved into crystalloid amount and battery conversion efficiency.
To achieve the above object, the present invention provides a kind of polycrystalline ingot furnace of layered temperature control, including furnace body, is set to the furnace
Body bottom, the cooling bench to place silicon material and the heater between the furnace interior and the cooling bench periphery；
The heater includes adding set on the cooling bench circumference and along multiple sides of furnace body short transverse setting
Hot device and the top heater above the side heater and the cooling bench；
Multiple side heaters are separately connected different power supply modules in order to control any side respectively and add
The heating temperature of hot device.
Optionally, the side heater includes the first side heater of the lower circumference set on the cooling bench and is set to
The second side heater above first side heater；
The power supply module includes the first power supply module and the described second side of connection for connecting first side heater
Portion's heater connects the second power supply module.
Optionally, the heating sheet of the same side of first side heater and second side heater is located at same
In perpendicular.
It optionally, further include the first temperature sensor for connecting first side heater, connection second side
The second temperature sensor of heater and the tip temperature sensor for connecting the top heater.
Optionally, the top heater is concatenated with second side heater.
It optionally, further include the supplying power at top module for connecting the top heater.
Optionally, first side heater, second side heater and the top heater are graphite
Heater.
It optionally, further include third side heater above second side heater and connection described the
The third power supply module and third temperature sensor of three side heaters.
Optionally, the heat-insulation cage to heat-insulation and heat-preservation is equipped between the heater and the furnace body.
Optionally, the cooling bench is circumferentially with crucible guard boards component.
Relative to above-mentioned background technique, the polycrystalline ingot furnace of layered temperature control provided by the present invention includes furnace body, in furnace body
Bottom be equipped with cooling bench, cooling bench be used to place the crucible equipped with silicon material, between cooling bench and furnace body be equipped be used to silicon material
Heat the heater so that melting silicon materials.The heater includes multiple side heaters and the setting side that cooling bench circumference is arranged in
Top heater above portion's heater and cooling bench.Wherein, multiple side heaters along furnace body short transverse setting and it is more
A heater is connected to different power supply modules.
Multiple side heaters are set by the short transverse along furnace body, each side heater is by individually powering
Module for power supply can control multiple side heaters to be in identical heating temperature or power when carrying out heating fusing to silicon material
Silicon material is heated, when silicon material is long brilliant, can control different side heaters to be in different heating temperatures, to control
The temperature gradient of thermal field is built and is most suitable for the long brilliant temperature gradient of silicon material, and long brilliant speed and crystal growth quality are improved.And after ingot casting
Phase can improve long brilliant driving force (temperature difference), avoid silicon by increasing the heating temperature difference between neighbouring side heater
The dislocation increment of ingot middle and upper part, improves the crystal quality of silicon wafer, and then improve the transfer efficiency of silicon wafer battery.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the polycrystalline ingot furnace of layered temperature control provided by the embodiment of the present invention.
Wherein:
1- crucible guard boards component, 2- heat-insulation cage, the first side heater of 3-, the first temperature sensor of 4-, the second side 5-
Heater, 6- second temperature sensor, 7- top heater, 8- tip temperature sensor, 9- furnace body.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make those skilled in the art more fully understand the present invention program, with reference to the accompanying drawing and it is embodied
The present invention is described in further detail for mode.
Referring to FIG. 1, Fig. 1 is the schematic diagram of the polycrystalline ingot furnace of layered temperature control provided by the embodiment of the present invention.
The polycrystalline ingot furnace of layered temperature control provided by the present invention includes furnace body 9 and is arranged inside furnace body 9 for placing
The cooling bench of silicon material and the long crystalline substance of silicon material for melting；The setting of furnace body 9 and cooling bench can refer to existing polycrystalline ingot furnace.Furnace body
It is equipped between 9 and cooling bench and the heater that the crucible of silicon material is heated is filled to placement on cooling bench.The heater includes top
Portion's heater 7 and multiple side heaters that cooling bench periphery is set, it is total by top heater 7 and multiple side heaters
With the heating for completing silicon material.
Wherein, multiple side heaters are arranged along the short transverse higher slice of furnace body 9, and multiple side heaters connect respectively
Connect different power supply modules；In other words, the corresponding power supply module of a side heater, can be by changing a power supply mould
The supply current or voltage of block change the heating power and heating temperature of a side heater.When multiple power supply modules are arranged not
With supply current or voltage when, corresponding multiple side heaters are at different heating temperatures, consequently facilitating accurate control
System forms the long brilliant temperature gradient of suitable silicon ingot.
Furthermore, it is understood that silicon ingot long brilliant speed and quality are determined by the Temperature Distribution in furnace body 9, and silicon ingot is long brilliant cooling
It is long straight up brilliant above platform, long crystalline substance speed and is determined at crystalloid amount by the temperature gradient of vertical direction, passes through the multiple sides of setting
Portion's heater, and multiple side heaters are powered using different power supply modules, it can be exactly by each power supply of control
The supply current or voltage of module improve to be accurately controlled temperature gradient and grow brilliant speed and at crystalloid amount, avoid the ingot casting later period
Long crystalline substance slows down the middle and upper part dislocation increment for leading to silicon ingot, and then improves crystal quality and battery conversion efficiency.
The polycrystalline ingot furnace of layered temperature control provided by the present invention is carried out more in the following with reference to the drawings and specific embodiments
Detailed introduction.
In a kind of specific embodiment provided by the present invention, referring to FIG. 1, the number of side heater is specially two
It is a, be respectively arranged in the first side heater 3 of the lower layer of cooling bench circumference and be arranged in cooling bench circumference upper layer namely
Second side heater 5 of 3 top of the first side heater.The periphery of cooling bench is equipped with crucible guard boards component 1, prevents from filling silicon
The crucible of material slides from cooling bench, and the prior effect of crucible guard boards component 1 is then that lateral support is provided for crucible, prevents earthenware
Crucible is damaged in heated condition load-bearing；Crucible guard boards component 1 is fixed on cooling bench by bolt and nut using graphite plate.Heater
Periphery and furnace body 9 inner circumferential between then be equipped with heat-insulation and heat-preservation heat-insulation cage 2, heat-insulation cage 2 use stainless steel frame and carbon fiber
Hard felt at.
Corresponding with the setting of above-mentioned side heater, the first side heater 3 is connected with the first power supply module, passes through
One power supply module is powered to the first side heater 3 while the current or voltage by changing the first power supply module can be adjusted the
The heating temperature of one side heater 3；Second side heater 5 is connected with the second power supply module, by changing the second power supply mould
Block is powered to the second side heater 5 while the current or voltage by changing the second power supply module adjusts the second side heater
5 heating temperature.
On the whole, the first side heater 3 and the second side heater 5 along furnace body 9 short transverse it is setting up and down
The circumference of cooling bench, by controlling the heating temperature of the first side heater 3 and the heating temperature of the second side heater 5 respectively
The temperature gradient of vertical direction in furnace body 9 is controlled, in order to when crystal is grown straight up along cooling bench, vertical direction
Temperature gradient provides enough power for crystal growth.First side heater 3 and the second side heater 5 and traditional heating
Device structure is similar, and the heating sheet for generalling use graphite flake or carbon-carbon material is formed by connecting, and the first side heater 3 and second
Side heater 5 is equipped with individual electrode, by respective electrode and electrode connecting rod be separately connected the first power supply module and
Second power supply module.First power supply module and the second power supply module are preferably using the transformer for being connected to power grid.
To optimize above-described embodiment, the heating sheet position of any side of the first side heater 3 and the second side heater 5
In in same perpendicular；For example, when the first side heater 3 is the tube-in-tube structure of square, the heating of the second side
Device 5 is also the tube-in-tube structure of square, and heating sheet and the first side heater on the four direction of the second side heater 5
Heating sheet on 3 four direction is completely in same perpendicular；This ensure that the first side heater 3 and second side
Portion's heater 5 is equidistant apart from cooling bench central axes, convenient for maintaining the identical of heating temperature.Certainly, the first side is heated
Device 3 and the second side heater 5 can also be in different perpendiculars, can need to carry out flexible setting according to practical heating.
To optimize above-described embodiment, the first side heater 3 is connected with the first temperature sensor 4, the second side heater 5
It is connected with second temperature sensor 6, the first side is detected by the first temperature sensor 4 and second temperature sensor 6 respectively and is added
The heating temperature of hot device 3 and the second side heater 5, convenient for the first power supply module and the second power supply module adjustment heated current or
Voltage.At the same time, top heater 7 is additionally provided with the tip temperature sensor 8 of detection 7 heating temperature of top heater.First
Temperature sensor 4, second temperature sensor 6 and tip temperature sensor 8 generally use thermocouple temperature sensor, can also basis
Need to select the temperature sensor of other models, as long as the heating temperature of each heater can be accurately reflected.
In the above-described embodiments, top heater 7 can be with the side heater namely the second side heater 5 of the top
It is connected in series, convenient for controlling identical heated current, namely by the second power supply simultaneously to the second side heater 5 and top
Heater 7 is powered, while adjusting the heating temperature of the second side heater 5 and top heater 7；Top heater 7 can be with
It is connected in parallel with the second side heater 5, convenient for controlling identical operating voltage；Certainly, top heater 7 can also individually be set
Independent supplying power at top module is set, consequently facilitating the temperature gradient in more flexible accurate adjustment furnace body 9, supplying power at top module
Setting can refer to the first power supply module, the second power supply module and the prior art.
On the basis of the above embodiments, third side heater can also be added and connect the of third side heater
Three power supply modules and third temperature sensor, third temperature sensor are used to detect the heating temperature of third side heater, the
Three power supply modules are then used to power to third side heater and heat by adjusting supply current or voltage adjustment third side
The heating temperature of device.Third side heater, third power supply module and third temperature sensor can refer to above-described embodiment progress
Setting.
Generally speaking, no matter how many a side heaters are used, the total height of side heater keeps being basically unchanged substantially.
Namely when the total height of side heater is set as 300 millimeters, when using two side heaters, the heating of any one side
The height of device is 150 millimeters, and when using three side heaters, the height of any one side heater may be configured as 100
Millimeter.Certain gap is set, but gap should not be too large again, general control is at 5~40 millimeters between adjacent side heater.
Obviously, more side heaters and power supply module are more accurate to the control of temperature gradient in furnace body 9, thus more
Be conducive to improve long brilliant speed crystal quality；On the other hand, more power supply modules then will increase the polycrystalline casting of layered temperature control again
The complexity of ingot furnace apparatus cost and control mechanism.In general, using two layers of temperature control namely two side heaters
Crystalloid amount can be effectively improved into, improve long brilliant speed, and help to solve equipment cost.Above-mentioned first side heater 3,
Two side heaters 5 and top heater 7 generally use graphite material or carbon-carbon material is made.
It should be noted that in the present specification, such as first and second etc relational terms are used merely to one
Entity is distinguished with other several entities, and without necessarily requiring or implying between these entities, there are any this actual
Relationship or sequence.
The polycrystalline ingot furnace of layered temperature control provided by the present invention is described in detail above.Tool used herein
Principle and implementation of the present invention are described for body example, the above embodiments are only used to help understand this hair
Bright method and its core concept.It should be pointed out that for those skilled in the art, not departing from the present invention
, can be with several improvements and modifications are made to the present invention under the premise of principle, these improvement and modification also fall into right of the present invention
It is required that protection scope in.
Claims (10)
1. a kind of polycrystalline ingot furnace of layered temperature control, which is characterized in that including furnace body (9), be set to the furnace body (9) bottom, use
With the heater placing the cooling bench of silicon material and being set between the furnace body (9) inside and the cooling bench periphery；
The heater includes heating set on the cooling bench circumference and along multiple sides of the furnace body (9) short transverse setting
Device and the top heater (7) above the side heater and the cooling bench；
Multiple side heaters are separately connected different power supply modules in order to control any side heater respectively
Heating temperature.
2. the polycrystalline ingot furnace of layered temperature control according to claim 1, which is characterized in that the side heater includes setting
In the lower circumference of the cooling bench the first side heater (3) and be set to first side heater (3) above second
Side heater (5)；
The power supply module includes the first power supply module and connection second side for connecting first side heater (3)
Heater (5) connects the second power supply module.
3. the polycrystalline ingot furnace of layered temperature control according to claim 2, which is characterized in that first side heater
(3) it is located in the same vertical plane with the heating sheet of the same side of second side heater (5).
4. the polycrystalline ingot furnace of layered temperature control according to claim 3, which is characterized in that further include connection first side
The first temperature sensor (4) of portion's heater (3), connection second side heater (5) second temperature sensor (6) and
Connect the tip temperature sensor (8) of the top heater (7).
5. the polycrystalline ingot furnace of layered temperature control according to claim 4, which is characterized in that the top heater (7) with
Second side heater (5) concatenation.
6. the polycrystalline ingot furnace of layered temperature control according to claim 4, which is characterized in that further include connecting the top to add
The supplying power at top module of hot device (7).
7. the polycrystalline ingot furnace of layered temperature control according to claim 6, which is characterized in that first side heater
(3), second side heater (5) and the top heater (7) are graphite heater.
8. according to the polycrystalline ingot furnace of the described in any item layered temperature controls of claim 2 to 7, which is characterized in that further include being set to
The third power supply of third side heater and the connection third side heater above second side heater (5)
Module and third temperature sensor.
9. the polycrystalline ingot furnace of layered temperature control according to claim 8, which is characterized in that the heater and the furnace body
(9) heat-insulation cage (2) to heat-insulation and heat-preservation is equipped between.
10. the polycrystalline ingot furnace of layered temperature control according to claim 9, which is characterized in that the circumferential direction of the cooling bench is set
There is crucible guard boards component (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910707552.9A CN110257907A (en) | 2019-08-01 | 2019-08-01 | A kind of polycrystalline ingot furnace of layered temperature control |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910707552.9A CN110257907A (en) | 2019-08-01 | 2019-08-01 | A kind of polycrystalline ingot furnace of layered temperature control |
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| CN110257907A true CN110257907A (en) | 2019-09-20 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202989351U (en) * | 2012-09-19 | 2013-06-12 | 杭州慧翔电液技术开发有限公司 | Ingot furnace thermal field structure based on multiple heaters |
| CN107523867A (en) * | 2017-10-16 | 2017-12-29 | 镇江环太硅科技有限公司 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
| CN109208067A (en) * | 2017-07-05 | 2019-01-15 | 奥特斯维能源（太仓）有限公司 | A kind of quasi- monocrystalline ingot casting heating thermal field structure |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
-
2019
- 2019-08-01 CN CN201910707552.9A patent/CN110257907A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202989351U (en) * | 2012-09-19 | 2013-06-12 | 杭州慧翔电液技术开发有限公司 | Ingot furnace thermal field structure based on multiple heaters |
| CN109208067A (en) * | 2017-07-05 | 2019-01-15 | 奥特斯维能源（太仓）有限公司 | A kind of quasi- monocrystalline ingot casting heating thermal field structure |
| CN107523867A (en) * | 2017-10-16 | 2017-12-29 | 镇江环太硅科技有限公司 | A kind of layer-stepping side heater of polycrystalline silicon ingot or purifying furnace |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
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Application publication date: 20190920 |