CN204779921U - Novel polycrystalline silicon side layering heating device - Google Patents
Novel polycrystalline silicon side layering heating device Download PDFInfo
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- CN204779921U CN204779921U CN201520379493.4U CN201520379493U CN204779921U CN 204779921 U CN204779921 U CN 204779921U CN 201520379493 U CN201520379493 U CN 201520379493U CN 204779921 U CN204779921 U CN 204779921U
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- well heater
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Abstract
The utility model relates to a novel polycrystalline silicon side layering heating device, it includes that copper electrode, top heater, side go up heater in graphite connecting block, the side, the lower heater that inclines, connecting block, end heater and time copper electrode all around, wherein, the bottom connection of going up the copper electrode is fixed with the top heater, heater connection is gone up with top heater connection, bottom with the side in graphite connecting block upper end in the side, side heater down is located upward heater below of side, heater, side adopt respectively at the both ends of heater down in the side the connecting block is fixed all around, end heater is located the side below of heater down to set up relatively with a heater, the copper electrode is connected to on the end heater down. The utility model discloses an it is low that novel polycrystalline silicon side layering heating device has the energy consumption, and thermal field reasonable in design is applicable to a great deal of advantages such as the high -quality silicon bulk production of jumbo size.
Description
[technical field]
The utility model relates to a kind of component devices of ingot furnace, is specifically related to a kind of Novel polycrystalline silicon side leveled heating device, belongs to production of polysilicon equipment technical field.
[background technology]
Along with country's continuing to increase New Energy Industry support, the Cost Problems of photovoltaic generation more and more receives publicity.The solar module of current main flow is mainly made by polysilicon, and the first procedure of polycrystalline silicon battery plate--the cost of ingot casting accounts for 20% ~ 25% of total cost, therefore control its cost and seem particularly important, the high-efficiency polycrystalline ingot of large gauge addresses this problem most effective means exactly.
Single ingot weight of the present market mainstream is between 500KG ~ 800KG, can cut quantity is that 5x5,6x6(industry is commonly called as G5, G6), adopt 4 or 5 graphite heater heating, by promoting heat-insulation cage or falling heat insulation bottom board mode to cool, there is silicon ingot larger, it is more difficult that thermal field controls, and the overstepping the bounds of propriety cloth of thermoisopleth is unequal, the problems such as cell piece transformation efficiency is not high.
Therefore, for solving the problems of the technologies described above, necessaryly provide a kind of Novel polycrystalline silicon side leveled heating device, to overcome described defect of the prior art.
[utility model content]
For solving the problem, it is low that the purpose of this utility model is to provide a kind of energy consumption, and thermal field is reasonable in design, is applicable to the Novel polycrystalline silicon side leveled heating device that large size high-quality silicon ingot is produced.
For achieving the above object, the technical scheme that the utility model is taked is: a kind of Novel polycrystalline silicon side leveled heating device, and it comprises well heater, surrounding contiguous block, end well heater and lower copper electrode under joining of graphite block on copper electrode, heater top, side, side upper heater, side; Wherein, the bottom of described upper copper electrode is fixedly connected with described heater top; On described side, joining of graphite block upper end is connected with heater top, and bottom is connected with side upper heater; Under described side, well heater is positioned at below the upper heater of side; Under described side upper heater, side, the two ends of well heater adopt described surrounding contiguous block to fix respectively; Well heater of the described end is positioned at the below of well heater under side, and and heater top be oppositely arranged; Described lower copper electrode is connected on end well heater.
Novel polycrystalline silicon side of the present utility model leveled heating device is set to further: be built-in with water-cooled tube in described upper copper electrode and lower copper electrode.
Novel polycrystalline silicon side of the present utility model leveled heating device is set to further: described heater top and side upper heater adopt one group of Power supply; Under described side, well heater adopts another group Power supply; Well heater of the described end adopts one group of Power supply again.
Novel polycrystalline silicon side of the present utility model leveled heating device is set to further: on described heater top, side, under joining of graphite block, side upper heater, side, well heater, surrounding contiguous block, end well heater all adopt graphite R6500 to make.
Compared with prior art, the utility model has following beneficial effect:
1. output is large, and single ingot output can reach 1200kg, (existing main flow silicon ingot weight 800kg);
2. saving energy, per kilogram current consumption at 6 degree of electricity/kg, (existing main flow current consumption per kilogram more than 7 degree);
3. the thermal field design optimized, on the crystal growing technology basis of original six heating systems, optimize side heater and control, make overall thermal field thermoisopleth more straight, crystal growth is more vertical, and grain size is more even.
[accompanying drawing explanation]
Fig. 1 is the structural representation of Novel polycrystalline silicon side of the present utility model leveled heating device.
Fig. 2 is the structural representation after Novel polycrystalline silicon side of the present utility model leveled heating device is installed on ingot furnace.
[embodiment]
Refer to shown in Figure of description 1 and accompanying drawing 2, the utility model is a kind of Novel polycrystalline silicon side leveled heating device, and it is made up of a few parts such as well heater 4, surrounding contiguous block 7, end well heater 8 and lower copper electrodes 9 under joining of graphite block 5, side upper heater 3, side on upper copper electrode 1, heater top 6, side.
Wherein, the bottom of described upper copper electrode 1 is fixedly connected with described heater top 6.
On described side, joining of graphite block 5 upper end is connected with heater top 6, and bottom is connected with side upper heater 3.
Under described side, well heater 4 is positioned at below side upper heater 3.Under described side upper heater 3, side, the two ends of well heater 4 adopt described surrounding contiguous block 7 to fix respectively.
Well heater of the described end 8 is positioned at the below of well heater 4 under side, and and heater top 6 be oppositely arranged.
Described lower copper electrode 9 is connected on end well heater 8.Mainly play the effect of transmitting low-voltage, high-current in described upper copper electrode 1 and lower copper electrode 9, be built-in with water-cooled tube 2 in it, water-cooled tube 2 is for the heating of cooling electrode.
Further, described heater top 6 and side upper heater 3 adopt one group of power supply (not shown) power supply; Under described side, well heater 4 adopts another group Power supply (not shown); Well heater of the described end 8 adopts one group of power supply (not shown) power supply again.
On described heater top 6, side, under joining of graphite block 5, side upper heater 3, side, well heater 4, surrounding contiguous block 7, end well heater 8 all adopt graphite R6500 to make.
Ingot casting process is divided into heating, fusing, and long brilliant, annealing, cools 5 stages.In the heating and melting stage, six heating of Novel polycrystalline silicon side of the present utility model leveled heating device, use temperature controls.Enter the long brilliant stage, close bottom heater 8 operating power, use well heater 4 under heater top 6, side upper heater 3 and side, heater top 6 and side upper heater 3 use temperature control, lower well heater 4 uses power to control, and turns down set value of the power gradually along with growing brilliant process.Annealing stage, under heater top 6, side upper heater 3 and side, well heater 4 use temperature controls, and bottom heater 8 uses power to control.Cooling stages, closes institute's having heaters.
The design feature of Novel polycrystalline silicon side of the present utility model leveled heating device is as follows:
1. adopt layer-stepping side heater, on the basis of original six heating, upper and lower hierarchical control is realized to side heater.
2. pair long brilliant technique is optimized again, retains and promotes heat-insulation cage and pull plate technology, by arranging the power ratio under side upper heater and side between well heater in long brilliant process, realizes the control to crystal growth.
Above embodiment is only the preferred embodiment of this creation, and not in order to limit this creation, any amendment made within all spirit in this creation and principle, equivalent replacement, improvement etc., within the protection domain that all should be included in this creation.
Claims (4)
1. a Novel polycrystalline silicon side leveled heating device, is characterized in that: comprise well heater, surrounding contiguous block, end well heater and lower copper electrode under joining of graphite block on copper electrode, heater top, side, side upper heater, side; Wherein, the bottom of described upper copper electrode is fixedly connected with described heater top; On described side, joining of graphite block upper end is connected with heater top, and bottom is connected with side upper heater; Under described side, well heater is positioned at below the upper heater of side; Under described side upper heater, side, the two ends of well heater adopt described surrounding contiguous block to fix respectively; Well heater of the described end is positioned at the below of well heater under side, and and heater top be oppositely arranged; Described lower copper electrode is connected on end well heater.
2. Novel polycrystalline silicon side as claimed in claim 1 leveled heating device, is characterized in that: be built-in with water-cooled tube in described upper copper electrode and lower copper electrode.
3. Novel polycrystalline silicon side as claimed in claim 1 leveled heating device, is characterized in that: described heater top and side upper heater adopt one group of Power supply; Under described side, well heater adopts another group Power supply; Well heater of the described end adopts one group of Power supply again.
4. Novel polycrystalline silicon side as claimed in claim 1 leveled heating device, is characterized in that: on described heater top, side, under joining of graphite block, side upper heater, side, well heater, surrounding contiguous block, end well heater all adopt graphite R6500 to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520379493.4U CN204779921U (en) | 2015-06-04 | 2015-06-04 | Novel polycrystalline silicon side layering heating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520379493.4U CN204779921U (en) | 2015-06-04 | 2015-06-04 | Novel polycrystalline silicon side layering heating device |
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| CN204779921U true CN204779921U (en) | 2015-11-18 |
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| CN201520379493.4U Active CN204779921U (en) | 2015-06-04 | 2015-06-04 | Novel polycrystalline silicon side layering heating device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087045A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting ingot casting melt and crystal growing technology |
| CN106119956A (en) * | 2016-08-19 | 2016-11-16 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting casting ingot method |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
| CN108588825A (en) * | 2018-07-06 | 2018-09-28 | 浙江精功科技股份有限公司 | A kind of moveable ingot furnace of side heater and its casting ingot process |
| CN108866622A (en) * | 2018-07-31 | 2018-11-23 | 宜昌南玻硅材料有限公司 | The heating system and its operation method of polycrystalline ingot furnace |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
-
2015
- 2015-06-04 CN CN201520379493.4U patent/CN204779921U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087045A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting ingot casting melt and crystal growing technology |
| CN106119956A (en) * | 2016-08-19 | 2016-11-16 | 西安华晶电子技术股份有限公司 | A kind of polysilicon fritting casting ingot method |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN108221048A (en) * | 2018-04-10 | 2018-06-29 | 江苏高照新能源发展有限公司 | A kind of layering snakelike polycrystalline silicon ingot casting graphite side heater |
| CN108588825A (en) * | 2018-07-06 | 2018-09-28 | 浙江精功科技股份有限公司 | A kind of moveable ingot furnace of side heater and its casting ingot process |
| CN108588825B (en) * | 2018-07-06 | 2024-03-15 | 浙江精工集成科技股份有限公司 | Ingot furnace with movable side heater and ingot casting process thereof |
| CN108866622A (en) * | 2018-07-31 | 2018-11-23 | 宜昌南玻硅材料有限公司 | The heating system and its operation method of polycrystalline ingot furnace |
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
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Address after: 1809 Jianhu Road, Keqiao District, Shaoxing City, Zhejiang Province Patentee after: Zhejiang Jinggong Integrated Technology Co.,Ltd. Address before: 1809 Jianhu Road, Keqiao District, Shaoxing City, Zhejiang Province Patentee before: ZHEJIANG JINGGONG SCIENCE & TECHNOLOGY Co.,Ltd. |