CN203065166U - Novel polycrystalline silicon ingot impurity removal device - Google Patents
Novel polycrystalline silicon ingot impurity removal device Download PDFInfo
- Publication number
- CN203065166U CN203065166U CN 201320011783 CN201320011783U CN203065166U CN 203065166 U CN203065166 U CN 203065166U CN 201320011783 CN201320011783 CN 201320011783 CN 201320011783 U CN201320011783 U CN 201320011783U CN 203065166 U CN203065166 U CN 203065166U
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- silicon ingot
- polycrystalline silicon
- impurity removal
- insulation cage
- furnace body
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Abstract
The utility model relates to a novel polycrystalline silicon ingot impurity removal device which comprises a vacuum furnace body, a heat insulation cage, an exhaust pipe and a hose, wherein a slow exhaust port is arranged at the top of the vacuum furnace body; the heat insulation cage is arranged in the vacuum furnace body; a heat retaining panel is arranged at the inner side of the heat insulation cage; one end of the exhaust pipe is fixed at the top of the heat insulation cage through a graphite bolt and the other end is connected with the slow exhaust port; and the slow exhaust port and the hose are connected with each other through an adapter. According to the novel polycrystalline silicon ingot impurity removal device provided by the utility model, the exhaust pipe is arranged to promote the flow of the heat in the thermal field, so that the impurity removal in the silicon ingot is accelerated to a certain extent and the novel polycrystalline silicon ingot impurity removal device is suitable for the impurity removal of large silicon ingots.
Description
Technical field
The utility model relates to a kind of polycrystalline silicon production device, is specifically related to a kind of New Polycrystalline silicon ingot casting impurity removing device, belongs to crystal silicon ingot furnace thermal field technical field.
Background technology
At present, world's photovoltaic industry is positioned at the first place of generation of electricity by new energy growth rate of market with 20% ~ 30% annual growth high speed development.Expect the year two thousand thirty photovoltaic generation and will account for more than 30% of total amount of world generating.Chinese as silicon chip, the big producing country of battery sheet and assembly, its assembly production capacity is near 50% of Gross World Product, though be the first in the world on total amount, but the performance at the battery sheet does not have great advantage, and it is not high to be mainly reflected in battery sheet optoelectronic transformation efficiency, and capability and performance is on the low side.And in the silicon chip foreign matter content higher be to influence silicon chip minority carrier life time principal element on the low side, particularly carbon content not only influences minority carrier life time, and section has bigger negative impact to the later process line side of cuing open and line.
In the prior art, the impurity-removing method of polycrystalline silicon ingot casting mainly adopts directional solidification method, namely by promoting heat-insulation cage or decline heat insulation bottom board, reaches the effect of cooling and impurities removal.For little side's ingot, the impurity that its corresponding temperature of thermal field gradient and hot-fluid melt in the silicon eliminating has reasonable effect.And at present for controlling cost, enhance production capacities, silicon ingot requires to do bigger and bigger, and is also more and more higher to the requirement of its thermal field, adopts original mode often not reach desirable product quality.
Therefore, for solving the problems of the technologies described above, necessaryly provide a kind of structure improved New Polycrystalline silicon ingot casting impurity removing device that has.
The utility model content
For addressing the above problem, the purpose of this utility model be to provide a kind of simple in structure, impurity elimination is effective and be suitable for the New Polycrystalline silicon ingot casting impurity removing device of big silicon ingot impurity elimination.
For achieving the above object, the technical scheme that the utility model is taked is: a kind of New Polycrystalline silicon ingot casting impurity removing device, and it comprises vacuum furnace body, heat-insulation cage, extraction pipe and flexible pipe; Wherein, the top of described vacuum furnace body is provided with one and takes out mouth slowly; Described heat-insulation cage is arranged in the vacuum furnace body, and its installed inside has warming plate; Described extraction pipe one end is bolted to the top of heat-insulation cage by a graphite, and the other end mouthful is connected with taking out slowly; Described taking out slowly between mouth and the flexible pipe connects by an adapter.
New Polycrystalline silicon ingot casting impurity removing device of the present utility model further is set to: described extraction pipe is the extraction pipe of graphite material.
New Polycrystalline silicon ingot casting impurity removing device of the present utility model further is set to: described adapter is the adapter of stainless steel.
New Polycrystalline silicon ingot casting impurity removing device of the present utility model also is set to: a side of described adapter is provided with a coolant intake, and opposite side is provided with a cooling water outlet.
Compared with prior art, the utlity model has following beneficial effect: New Polycrystalline silicon ingot casting impurity removing device of the present utility model is by arranging extraction pipe, promote the heat flow of thermal field inside, to a certain degree accelerate the impurities removal of silicon ingot inside, and be suitable for big silicon ingot impurity elimination.
Description of drawings
Fig. 1 is the sectional view of New Polycrystalline silicon ingot casting impurity removing device of the present utility model.
Fig. 2 is the sectional view of the adapter of New Polycrystalline silicon ingot casting impurity removing device of the present utility model.
Embodiment
See also shown in Figure of description 1 and the accompanying drawing 2, the utility model is a kind of New Polycrystalline silicon ingot casting impurity removing device, and it is made up of several parts such as vacuum furnace body 1, heat-insulation cage 2, extraction pipe 3 and flexible pipes 4.
Wherein, the top of described vacuum furnace body 1 is provided with one and takes out mouth 11 slowly.
Described heat-insulation cage 2 is arranged in the vacuum furnace body 1, and its installed inside has warming plate 5.
Described extraction pipe 3 one ends are fixed on the top of heat-insulation cage 2 by a graphite bolt 6, the other end with take out mouthfuls 11 slowly and be connected.This extraction pipe 3 is the extraction pipe 3 of graphite material.
Described taking out slowly between mouth 11 and the flexible pipe 4 connects by an adapter 7.This adapter 7 is the adapter 7 of stainless steel.Side in described adapter 7 is provided with a coolant intake 71, and opposite side is provided with a cooling water outlet 72.This adapter 7 is by water quench, and the high-temperature gas of avoiding releasing slowly exerts an influence to pipeline.
Described flexible pipe 4 is connected to by flow proportion valve (not shown) and vacuumizes unit (not shown).Described extraction pipe 3, take out mouthfuls 11 slowly, adapter 7 and flexible pipe 4 form a picking device.
In order to guarantee to produce active and effective effect to impurities removal, do not influence the thermograde of thermal field again, the control process of New Polycrystalline silicon ingot casting impurity removing device of the present utility model is as follows: in the heating phase, close the flow proportion valve of bleeding in the top, namely extraction pipe 3 is not bled.Enter the fusion stage, the proportional valve aperture is transferred to 20%, guarantee certain flow velocity, can promote hot-fluid and the impurities removal of thermal field inside, aperture is little, can not produce a very large impact thermal field temperature inside field, guarantees the normal fusing of silicon material.In the long brilliant stage, control promotes heat-insulation cage 2 or reduces and protect warming plate 5, realizes the rational temperature gradient, adjusts flow proportional valve opening to 100% simultaneously.Behind long brilliant the end, close the flow proportional valve opening to finishing.
By being detected, the foreign matter content that increases top picking device the experiment silicon ingot of doing and the experiment silicon ingot silicon chip that does not add the top picking device shows that the experiment silicon chip top carbon content that increases the top picking device reduces 5-10ppma.Concrete experimental result is as shown in the table:
Above embodiment only is the preferred embodiment of this creation, not in order to limiting this creation, all in this creation spirit and principle within make any modification, be equal to replacement, improvement etc., all should be included within the protection domain of this creation.
Claims (4)
1. a New Polycrystalline silicon ingot casting impurity removing device is characterized in that: comprise vacuum furnace body, heat-insulation cage, extraction pipe and flexible pipe; Wherein, the top of described vacuum furnace body is provided with one and takes out mouth slowly; Described heat-insulation cage is arranged in the vacuum furnace body, and its installed inside has warming plate; Described extraction pipe one end is bolted to the top of heat-insulation cage by a graphite, and the other end mouthful is connected with taking out slowly; Described taking out slowly between mouth and the flexible pipe connects by an adapter.
2. New Polycrystalline silicon ingot casting impurity removing device as claimed in claim 1, it is characterized in that: described extraction pipe is the extraction pipe of graphite material.
3. New Polycrystalline silicon ingot casting impurity removing device as claimed in claim 1, it is characterized in that: described adapter is the adapter of stainless steel.
4. New Polycrystalline silicon ingot casting impurity removing device as claimed in claim 1, it is characterized in that: a side of described adapter is provided with a coolant intake, and opposite side is provided with a cooling water outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320011783 CN203065166U (en) | 2013-01-10 | 2013-01-10 | Novel polycrystalline silicon ingot impurity removal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320011783 CN203065166U (en) | 2013-01-10 | 2013-01-10 | Novel polycrystalline silicon ingot impurity removal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203065166U true CN203065166U (en) | 2013-07-17 |
Family
ID=48763980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320011783 Expired - Fee Related CN203065166U (en) | 2013-01-10 | 2013-01-10 | Novel polycrystalline silicon ingot impurity removal device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203065166U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526290A (en) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon cast ingot |
| CN105648525A (en) * | 2014-11-17 | 2016-06-08 | 镇江荣德新能源科技有限公司 | A polycrystal furnace used for a polycrystalline silicon directional solidification process |
-
2013
- 2013-01-10 CN CN 201320011783 patent/CN203065166U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526290A (en) * | 2013-10-24 | 2014-01-22 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon cast ingot |
| CN105648525A (en) * | 2014-11-17 | 2016-06-08 | 镇江荣德新能源科技有限公司 | A polycrystal furnace used for a polycrystalline silicon directional solidification process |
| CN105648525B (en) * | 2014-11-17 | 2018-07-10 | 镇江荣德新能源科技有限公司 | For the polycrystalline furnace of polysilicon directional freezing technique |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130717 Termination date: 20200110 |