CN204825127U - Liquid in succession reinforced polycrystalline silicon casting unit - Google Patents
Liquid in succession reinforced polycrystalline silicon casting unit Download PDFInfo
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- CN204825127U CN204825127U CN201520533216.4U CN201520533216U CN204825127U CN 204825127 U CN204825127 U CN 204825127U CN 201520533216 U CN201520533216 U CN 201520533216U CN 204825127 U CN204825127 U CN 204825127U
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- ingot casting
- silicon
- furnace chamber
- liquid
- melting pot
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- 238000005266 casting Methods 0.000 title claims abstract description 84
- 239000007788 liquid Substances 0.000 title claims abstract description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 97
- 239000010703 silicon Substances 0.000 claims abstract description 97
- 239000002210 silicon-based material Substances 0.000 claims abstract description 61
- 238000002844 melting Methods 0.000 claims abstract description 32
- 230000008018 melting Effects 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 238000010257 thawing Methods 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 239000000155 melt Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 14
- 230000006698 induction Effects 0.000 claims description 5
- 238000004321 preservation Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010309 melting process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model discloses a liquid in succession reinforced polycrystalline silicon casting unit, melt the oven chamber including the silicon material, both ends were equipped with workbin and ingot casting oven chamber respectively about the silicon material melted the oven chamber, silicon material melt the oven chamber with indoor heat preservation felt and the ingot casting oven chamber heat preservation felt of being equipped with respectively of ingot furnace, be equipped with in the heat preservation felt with workbin matched with melting pot is located the melting pot with evenly be equipped with a plurality of heaters in the space between the heat preservation felt, the melting pot with it is connected to move the pipe through the silicon liquid stream between the ingot casting oven chamber, both ends were equipped with silicon liquid flow control pole and silicon liquid sprinkler respectively about the silicon liquid stream moved the pipe, the silicon liquid stream moves intraductal relevant position and is equipped with silicon liquid flow control valve, is located silicon liquid sprinkler below be equipped with on the ingot casting oven chamber with silicon liquid sprinkler matched with ingot casting crucible backplate, be equipped with the ingot casting crucible in the ingot casting crucible backplate.
Description
Technical field
The utility model relates to photovoltaic polycrystalline cast ingot field, specifically, relates to a kind of liquid continuous charging polysilicon ingot casting equipment.
Background technology
Demand for the energy since human society enters industrial civilization is growing, and along with technical progress and population growth, mankind's energy demand exponentially level increases.In the past about 200 years industrialization society evolution in, the energy of the mankind mainly comes from the non-renewable fossil energy such as oil, coal and Sweet natural gas.In recent years, the drawback of fossil energy progressively shows, the such as finiteness of fossil energy resource causes the reserves of fossil energy to be about to be exhausted by the mankind in coming few decades, and in addition, the negative impact being difficult to reverse also has been shone in the extensive use of fossil energy to human environment.Under the energy background of our times, the mankind start the alternative energy of development and utilization, and therefore the emerging renewable energy source such as sun power, wind energy becomes the focus that the mankind pay close attention to.Solar energy power generating, the sustainability of its energy and to advantages such as the friendly of environment, in fast development in recent ten years in this century, cost of electricity-generating moves closer to the electric power that traditional fossil energy produces, and can reduce costs further future at visible, obtain status more competitive than traditional energy at energy field.
Current solar energy power generating mainly uses crystal silicon solar battery component to transfer sunlight to electric energy, crystal silicon solar energy battery has polysilicon and silicon single crystal two kinds by substrate, and wherein polysilicon occupies position of mainstream owing to having lower production cost, higher production efficiency and suitable battery efficiency on photovoltaic market.Photovoltaic production of polysilicon uses directional solidification technique, and after chunk polysilicon is loaded into polycrystalline crucible, heating and melting, then directional freeze obtains casting polycrystalline silicon ingot.Along with the progress of polycrystalline cast ingot technology, the polycrystalline furnace size of suitability for industrialized production progressively develops into the G6 size of current main-stream from G4, the polycrystalline furnace of following G7, G8 size may become main flow.Along with the increase of polycrystalline furnace size, charge amount also develops into the 850Kg of G6 from the 250Kg of G4, and expecting G8 charge amount can reach more than 1500Kg, along with the increase of charge amount, needs the thawing time more grown, larger crucible.Due to the increase of charge amount, the danger of leaking silicon also improves greatly.
So, the thermal radiation loss in silicon material heating and melting process can be reduced when developing a kind of use, energy consumption is low, production efficiency is high, with short production cycle, security is high, improve polycrystalline crucible service efficiency, improve silicon ingot resistivity distribution homogeneity, reduce the polysilicon ingot casting equipment by the oxygen carbon introduced in crucible and atmosphere or metals content impurity, reduction production cost and good product quality in silicon crystal, just become the problem that insider needs solution badly.
Utility model content
For the problem in correlation technique, the utility model proposes a kind of liquid continuous charging polysilicon ingot casting equipment, can reduce the thermal radiation loss in silicon material heating and melting process during use, and energy consumption is low, production efficiency is high, with short production cycle, security is high, improve polycrystalline crucible service efficiency, improve silicon ingot resistivity distribution homogeneity, reduce in silicon crystal by the oxygen carbon introduced in crucible and atmosphere or metals content impurity, reduction production cost and good product quality.
For realizing above-mentioned technical purpose, the technical solution of the utility model is achieved in that
A kind of liquid continuous charging polysilicon ingot casting equipment, comprise silicon material and melt furnace chamber, described silicon material melts the upper and lower two ends of furnace chamber and is respectively equipped with hopper and ingot casting furnace chamber, described silicon material melts furnace chamber and described ingot furnace indoor are respectively equipped with insulation quilt and ingot casting furnace chamber insulation quilt, the melting pot matched with described hopper is provided with in described insulation quilt, some well heaters are evenly provided with in space between described melting pot and described insulation quilt, be connected by silicon liquid flow duct between described melting pot with described ingot casting furnace chamber, the upper and lower two ends of described silicon liquid flow duct are respectively equipped with silicon flow quantity control lever and silicon liquid flusher, in described silicon liquid flow duct, corresponding position is provided with silicon liquid-flow controlling valve, the described ingot casting furnace chamber be positioned at below described silicon liquid flusher is provided with the ingot casting crucible backplate matched with described silicon liquid flusher, ingot casting crucible is provided with in described ingot casting crucible backplate, some ingot furnace chamber heaters are evenly provided with in space between described ingot casting crucible backplate and described ingot casting furnace chamber insulation quilt.
Further, described hopper comprises solid state si material torage tank, described solid state si material torage tank is connected by pipe connecting with between described melting pot, and described pipe connecting and described solid state si material torage tank junction and described pipe connecting and described melting pot junction are equipped with feeding valve.
Further, described hopper comprises silicon charge bar box for feeding odd, silicon charge bar pay-off is provided with in described silicon charge bar box for feeding odd, wherein, described silicon charge bar pay-off one end extends in described melting pot, and the described silicon charge bar pay-off being positioned at described silicon material thawing furnace chamber and described silicon charge bar box for feeding odd junction is provided with and melts furnace chamber opening-closing valve.
Further, described melting pot outside side wall is equipped with crucible guard boards.
Further, described well heater comprises resistance heater and induction heater.
The beneficial effects of the utility model: the thermal radiation loss in silicon material heating and melting process can be reduced, energy consumption is low, production efficiency is high, with short production cycle, security is high, improve polycrystalline crucible service efficiency, improve silicon ingot resistivity distribution homogeneity, reduce in silicon crystal by the oxygen carbon introduced in crucible and atmosphere or metals content impurity, reduction production cost and good product quality.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation one of the liquid continuous charging polysilicon ingot casting equipment according to the utility model embodiment;
Fig. 2 is the structural representation two of the liquid continuous charging polysilicon ingot casting equipment according to the utility model embodiment;
Fig. 3 is the structural representation three of the liquid continuous charging polysilicon ingot casting equipment according to the utility model embodiment.
In figure:
1, solid state si material torage tank; 2, feeding valve; 3, resistance heater; 4, silicon material melts furnace chamber; 5, insulation quilt; 6, well heater; 7, crucible guard boards; 8, melting pot; 9, silicon flow quantity control lever; 10, silicon liquid flow duct; 11, silicon liquid-flow controlling valve; 12, silicon liquid flusher; 13, ingot furnace chamber heater; 14, ingot casting crucible backplate; 15, ingot casting furnace chamber insulation quilt; 16, ingot casting furnace chamber; 17, pipe connecting; 18, hopper; 19, silicon charge bar box for feeding odd; 20, silicon charge bar pay-off; 21, furnace chamber opening-closing valve is melted; 22, induction heater.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, other embodiments all that those of ordinary skill in the art obtain, all belong to the scope of the utility model protection.
As Figure 1-3, the liquid continuous charging polysilicon ingot casting equipment of one according to embodiment of the present utility model, comprise silicon material and melt furnace chamber 4, described silicon material melts furnace chamber about 4 two ends and is respectively equipped with hopper 18 and ingot casting furnace chamber 16, insulation quilt 5 and ingot casting furnace chamber insulation quilt 15 is respectively equipped with in described silicon material thawing furnace chamber 4 and described ingot casting furnace chamber 16, the melting pot 8 matched with described hopper 18 is provided with in described insulation quilt 5, some well heaters 6 are evenly provided with in space between described melting pot 8 and described insulation quilt 5, be connected by silicon liquid flow duct 10 between described melting pot 8 with described ingot casting furnace chamber 16, described silicon liquid flow duct about 10 two ends are respectively equipped with silicon flow quantity control lever 9 and silicon liquid flusher 12, in described silicon liquid flow duct 10, corresponding position is provided with silicon liquid-flow controlling valve 11, the described ingot casting furnace chamber 16 be positioned at below described silicon liquid flusher 12 is provided with the ingot casting crucible backplate 14 matched with described silicon liquid flusher 12, ingot casting crucible is provided with in described ingot casting crucible backplate 14, some ingot furnace chamber heaters 13 are evenly provided with in space between described ingot casting crucible backplate 14 and described ingot casting furnace chamber insulation quilt 15.
In one embodiment, described hopper 18 comprises solid state si material torage tank 1, described solid state si material torage tank 1 is connected by pipe connecting 17 with between described melting pot 8, and described pipe connecting 17 is equipped with feeding valve 2 with described solid state si material torage tank 1 junction and described pipe connecting 17 with described melting pot 8 junction.
In one embodiment, described hopper 18 comprises silicon charge bar box for feeding odd 19, silicon charge bar pay-off 20 is provided with in described silicon charge bar box for feeding odd 19, wherein, described silicon charge bar pay-off 20 one end extends in described melting pot 8, and the described silicon charge bar pay-off 20 being positioned at described silicon material thawing furnace chamber 4 and described silicon charge bar box for feeding odd 19 junction is provided with and melts furnace chamber opening-closing valve 21.
In one embodiment, described melting pot 8 outside side wall is equipped with crucible guard boards 7.
In one embodiment, described well heater 6 comprises resistance heater 3 and induction heater 22.
Conveniently understand technique scheme of the present utility model, below by way of in concrete use-pattern, technique scheme of the present utility model is described in detail.
When specifically using, embodiment one: load ingot casting crucible (G6 in described ingot casting furnace chamber 16, G7 or G8) and described ingot casting crucible backplate 14, crucible is built with a certain amount of silicon material, silicon material shape is any, charge amount is between 0-500Kg, be less than the specified charge amount of crucible, the described melting pot 8 that described silicon material melts in furnace chamber 4 loads 0-80Kg silicon material, 10-200Kg silicon material is loaded in described solid state si material torage tank 1, system vacuumizes, logical argon gas, open heating system in described ingot casting furnace chamber 16 and described silicon material thawing furnace chamber 4, silicon material in each furnace chamber of heating and melting, the valve of feeding described in heat-processed 2 is closed, described silicon liquid flow duct 10 controls to be in closing condition by described silicon liquid-flow controlling valve 11 or described silicon flow quantity control lever 9, in described ingot casting furnace chamber 16 material or long brilliant process, after in described silicon material thawing furnace chamber 4, silicon material has all melted, open described silicon material and melt the described silicon liquid-flow controlling valve 11 of the described silicon liquid flow duct 10 in furnace chamber 4 or described silicon flow quantity control lever 9, silicon liquid is made to flow into described ingot casting furnace chamber 16 with certain flow velocity.After in the crucible of described ingot casting furnace chamber 16, silicon material all melts, the brilliant technique of follow-up length is started according to casting ingot process, the liquid-state silicon material that described silicon material melts in furnace chamber 4 simultaneously flows in the crucible of described ingot casting furnace chamber 16 with certain flow velocity by described silicon liquid flusher 12, and the ingot casting stage simultaneously in described ingot casting furnace chamber 16 is undertaken by technique.Silicon material at regular intervals in (10-60 minute) described solid state si material torage tank 1 can quantitatively be added to described silicon material by described feeding valve 2 and be melted by heating and melting in furnace chamber 4, and each solid state si material supplements about about 5-50Kg.After silicon material in described solid state si material torage tank 1 exhausts, carry out hand-fed to it, total hand-fed number of times is depending on ingot casting gross weight.Stop reinforced after reaching setting silicon material total amount.After a certain amount of silicon material all joins described silicon material thawing furnace chamber 4, stop solid-state charging.The described resistance heater 3 in described silicon material thawing furnace chamber 4 and described induction heater 22 is closed after silicon material all flows into described ingot casting furnace chamber 16 in described silicon material thawing furnace chamber 4, and close the described silicon liquid-flow controlling valve 11 of described silicon liquid flow duct 10 or described silicon flow quantity control lever 9, in described ingot casting furnace chamber 16, long brilliant step is undertaken by technique, until technique terminates;
Embodiment two:
Load ingot casting crucible (G6, G7 or G8) and described ingot casting crucible backplate 14 in described ingot casting furnace chamber 16, crucible is built with a certain amount of silicon material, and silicon material shape is any, and charge amount, between 0-500Kg, is less than the specified charge amount of crucible.The described melting pot 8 that described silicon material melts in furnace chamber 4 loads 0-80Kg silicon material, and described silicon charge bar box for feeding odd 19 loads a polysilicon charge bar, and system vacuumizes, logical argon gas.Open heating system in described ingot casting furnace chamber 16 and described silicon material thawing furnace chamber 4, silicon material in each furnace chamber of heating and melting, the valve of feeding described in heat-processed 2 is closed, described silicon liquid flow duct 10 controls to be in closing condition by described silicon liquid-flow controlling valve 11 or described silicon flow quantity control lever 9, in described ingot casting furnace chamber 16 material or long brilliant process, after in described silicon material thawing furnace chamber 4, silicon material has all melted, open described silicon material and melt the described silicon liquid-flow controlling valve 11 of the described silicon liquid flow duct 10 in furnace chamber 4 or described silicon flow quantity control lever 9, silicon liquid is made to flow into described ingot casting furnace chamber 16 with certain flow velocity.After in the crucible of described ingot casting furnace chamber 16, silicon material all melts, the brilliant technique of follow-up length is started according to casting ingot process, the liquid-state silicon material that described silicon material melts in furnace chamber 4 simultaneously flows in the crucible of described ingot casting furnace chamber 16 with certain flow velocity by described silicon liquid flusher 12, and the ingot casting stage simultaneously in described ingot casting furnace chamber 16 is undertaken by technique.Load a polysilicon charge bar changes in weight according to described silicon charge bar box for feeding odd 19 and progressively polysilicon charge bar is sent into described silicon material thawing furnace chamber 4, until close to having melted completely, a small amount of for residue silicon rod is put into described melting pot 8.Close described thawing furnace chamber opening-closing valve 21, another root polysilicon charge bar is put into described silicon charge bar box for feeding odd 19, repeats above-mentioned material process.Total charging times is depending on ingot casting gross weight.Stop reinforced after reaching setting silicon material total amount.After a certain amount of silicon material all joins the thawing of described silicon material thawing furnace chamber 4, stop the reinforced of silicon charge bar.Melt silicon material in furnace chamber 4 at described silicon material and all flow into the rear described well heater 6 of closing in described silicon material thawing furnace chamber 4 of described ingot casting furnace chamber 16, and close the described silicon liquid-flow controlling valve 11 of described silicon liquid flow duct 10 or described silicon flow quantity control lever 9, in described ingot casting furnace chamber 16, long brilliant step is undertaken by technique, until technique terminates.
In sum, by means of technique scheme of the present utility model, by the effect of silicon liquid flow duct 10 and silicon liquid-flow controlling valve 11 and some well heaters, the thermal radiation loss in silicon material heating and melting process can be reduced, energy consumption is low, production efficiency is high, with short production cycle, security is high, improve polycrystalline crucible service efficiency, improve silicon ingot resistivity distribution homogeneity, reduce in silicon crystal by the oxygen carbon introduced in crucible and atmosphere or metals content impurity, reduction production cost and good product quality.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (5)
1. a liquid continuous charging polysilicon ingot casting equipment, it is characterized in that, comprise silicon material and melt furnace chamber (4), described silicon material melts furnace chamber (4) and is respectively equipped with hopper (18) and ingot casting furnace chamber (16) in two ends up and down, insulation quilt (5) and ingot casting furnace chamber insulation quilt (15) is respectively equipped with in described silicon material thawing furnace chamber (4) and described ingot casting furnace chamber (16), the melting pot (8) matched with described hopper (18) is provided with in described insulation quilt (5), the space be positioned between described melting pot (8) and described insulation quilt (5) is evenly provided with some well heaters (6), be connected by silicon liquid flow duct (10) between described melting pot (8) with described ingot casting furnace chamber (16), described silicon liquid flow duct (10) is respectively equipped with silicon flow quantity control lever (9) and silicon liquid flusher (12) in two ends up and down, the interior corresponding position of described silicon liquid flow duct (10) is provided with silicon liquid-flow controlling valve (11), the described ingot casting furnace chamber (16) being positioned at described silicon liquid flusher (12) below is provided with the ingot casting crucible backplate (14) matched with described silicon liquid flusher (12), ingot casting crucible is provided with in described ingot casting crucible backplate (14), the space be positioned between described ingot casting crucible backplate (14) and described ingot casting furnace chamber insulation quilt (15) is evenly provided with some ingot furnace chamber heaters (13).
2. liquid continuous charging polysilicon ingot casting equipment according to claim 1, it is characterized in that, described hopper (18) comprises solid state si material torage tank (1), described solid state si material torage tank (1) is connected by pipe connecting (17) with between described melting pot (8), and described pipe connecting (17) is equipped with feeding valve (2) with described solid state si material torage tank (1) junction and described pipe connecting (17) with described melting pot (8) junction.
3. liquid continuous charging polysilicon ingot casting equipment according to claim 1, it is characterized in that, described hopper (18) comprises silicon charge bar box for feeding odd (19), silicon charge bar pay-off (20) is provided with in described silicon charge bar box for feeding odd (19), wherein, described silicon charge bar pay-off (20) one end extends in described melting pot (8), and the described silicon charge bar pay-off (20) being positioned at described silicon material thawing furnace chamber (4) and described silicon charge bar box for feeding odd (19) junction is provided with melts furnace chamber opening-closing valve (21).
4. liquid continuous charging polysilicon ingot casting equipment according to claim 1, is characterized in that, described melting pot (8) outside side wall is equipped with crucible guard boards (7).
5. liquid continuous charging polysilicon ingot casting equipment according to claim 1, is characterized in that, described well heater (6) comprises resistance heater (3) and induction heater (22).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520533216.4U CN204825127U (en) | 2015-07-21 | 2015-07-21 | Liquid in succession reinforced polycrystalline silicon casting unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520533216.4U CN204825127U (en) | 2015-07-21 | 2015-07-21 | Liquid in succession reinforced polycrystalline silicon casting unit |
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| CN204825127U true CN204825127U (en) | 2015-12-02 |
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| CN201520533216.4U Expired - Fee Related CN204825127U (en) | 2015-07-21 | 2015-07-21 | Liquid in succession reinforced polycrystalline silicon casting unit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
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2015
- 2015-07-21 CN CN201520533216.4U patent/CN204825127U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105063747A (en) * | 2015-07-21 | 2015-11-18 | 李剑 | Liquid continuous feeding polysilicon casting equipment and production method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 |