CN208219008U - Single crystal furnace heater - Google Patents
Single crystal furnace heater Download PDFInfo
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- CN208219008U CN208219008U CN201820630638.7U CN201820630638U CN208219008U CN 208219008 U CN208219008 U CN 208219008U CN 201820630638 U CN201820630638 U CN 201820630638U CN 208219008 U CN208219008 U CN 208219008U
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Abstract
The utility model discloses a kind of single crystal furnace heaters, are related to monocrystalline silicon Preparation equipment technical field, main purpose is to provide a kind of influence by decrease melt convection to crystal-pulling, to improve the single crystal furnace heater of monocrystalline quality.A kind of main technical schemes of the utility model are as follows: single crystal furnace heater, it include: ontology, ontology includes the first heated wall and the second heated wall, and the top of the second heated wall is arranged in the first heated wall, wherein, the thickness of the second heated wall is thicker than the thickness of the first heated wall；Connecting pin, connecting pin is connected to the second heated wall, for connecting bolt, by the way that ontology is divided into the first heated wall and the second heated wall, and the thickness of the second heated wall is thicker than the thickness of the first heated wall, changes the temperature gradient of solution, to reduce the convection intensity of silicon melt, influence of the silicon melt convection current to crystal-pulling is reduced, and then improves the quality and quality of monocrystalline.The utility model is mainly for the preparation of monocrystalline silicon.
Description
Technical field
The utility model relates to monocrystalline silicon Preparation equipment technical field more particularly to a kind of single crystal furnace heaters.
Background technique
With the rapid development of society, photovoltaic art obtains the attention of more and more people, and monocrystalline silicon becomes solar energy
The main material of solar panel.During making monocrystalline silicon, need to heat silicon material by single crystal growing furnace, and in single crystal growing furnace
Heater is the origin of heat in single crystal growing furnace, with the increase of the requirement of size and quality to monocrystalline, along with reducing cost
Demand, increase crystal pulling inventory have become imperative settling mode, it is common practice to increase single crystal growing furnace and crucible
Size, still, with the increase of the size of single crystal growing furnace and crucible, melt convection can also be further enhanced, to seriously affect
The process of crystal-pulling reduces the quality and quality of monocrystalline.
Utility model content
In view of this, the utility model embodiment provides a kind of single crystal furnace heater, main purpose is to provide one kind and passes through
Weaken influence of the melt convection to crystal-pulling, to improve the single crystal furnace heater of monocrystalline quality.
In order to achieve the above objectives, the utility model mainly provides the following technical solutions:
The utility model embodiment provides a kind of single crystal furnace heater, comprising:
Ontology, the ontology include the first heated wall and the second heated wall, and first heated wall is arranged described second
The top of heated wall, wherein the thickness of second heated wall is thicker than the thickness of first heated wall；
Connecting pin, the connecting pin is connected to second heated wall, for connecting bolt.
Further, the thickness ratio of first heated wall and second heated wall is 1 to 2.
Further, the height ratio of first heated wall and second heated wall is 7 to 4.
Further, the ontology further includes connection wall, and connection wall setting is in first heated wall and described the
Between two heated walls, for connecting first heated wall and second heated wall.
Further, the connection wall has opposite first side and second side, the first side and described the
One heated wall is connected, and the second side is connected with second heated wall, wherein the first side and described first
The thickness of heated wall is identical, and the second side is identical as the thickness of second heated wall.
Further, first heated wall, second heated wall and the connection wall are an integral molding structure.
Further, the connection wall also has third side, and the third side is arranged in the first side and institute
It states between second side, and is located at the inside of the ontology, the third side is cambered surface.
Further, the third side is arc angling face.
Further, the connecting pin includes interconnecting piece and sole, and one end of the interconnecting piece is removably connected to described
Second heated wall, the other end are fixedly connected on the sole, and the sole has opposite the 4th side and the 5th side, in institute
It states the 4th side and the first connecting hole is set, the second connecting hole, first connecting hole and described the are set in the 5th side
Two connecting holes are interconnected, wherein the diameter of first connecting hole is greater than the diameter of second connecting hole.
Further, the interconnecting piece is an integral molding structure with the sole.
Compared with prior art, the utility model has the following technical effect that
In technical solution provided by the embodiment of the utility model, ontology include the first heated wall and the second heated wall, first
The top of the second heated wall is arranged in heated wall, wherein the thickness of the second heated wall is thicker than the thickness of the first heated wall；Connecting pin
It is connected to the second heated wall, for connecting bolt, compared with the existing technology, increases the size of single crystal growing furnace and crucible, still, with
The increase of the size of single crystal growing furnace and crucible, melt convection can also further enhance, to seriously affect the process of crystal-pulling, drop
The low quality and quality of monocrystalline, in the utility model, by the way that ontology is divided into the first heated wall and the second heated wall, and
The thickness of two heated walls is thicker than the thickness of the first heated wall, changes the temperature gradient of solution, to reduce pair of silicon melt
Intensity of flow reduces influence of the silicon melt convection current to crystal-pulling, and then improves the quality and quality of monocrystalline.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of monocrystalline silicon heater provided by the embodiment of the utility model；
Fig. 2 is the enlarged structure schematic diagram in Fig. 1 at A.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples.
As shown in Figure 1, ontology 1, ontology 1 includes the first heated wall 11 and the second heated wall 12, the setting of the first heated wall 11
On the top of the second heated wall 12, wherein the thickness of the second heated wall 12 is thicker than the thickness of the first heated wall 11；
Connecting pin 2, connecting pin 2 is connected to the second heated wall 12, for connecting bolt.
In technical solution provided by the embodiment of the utility model, ontology 1 includes the first heated wall 11 and the second heated wall 12,
The top of the second heated wall 12 is arranged in first heated wall 11, wherein the thickness of the second heated wall 12 is thicker than the first heated wall 11
Thickness；Connecting pin 2 is connected to the second heated wall 12, for connecting bolt, compared with the existing technology, increases single crystal growing furnace and crucible
Size, still, with the increase of the size of single crystal growing furnace and crucible, melt convection can also be further enhanced, to seriously affect
The process of crystal-pulling, reduces the quality and quality of monocrystalline, in the utility model, by dividing ontology 1 for the first heated wall
11 and second heated wall 12, and the thickness of the second heated wall 12 is thicker than the thickness of the first heated wall 11, changes the temperature of solution
It spends gradient and reduces influence of the silicon melt convection current to crystal-pulling, and then improve to reduce the convection intensity of silicon melt
The quality and quality of monocrystalline.
The effect of above-mentioned ontology 1 is heating crucible, and ontology 1 includes the first heated wall 11 and the second heated wall 12, and first adds
The top of the second heated wall 12 is arranged in hot wall 11, wherein and the thickness of the second heated wall 12 is thicker than the thickness of the first heated wall 11,
That is, ontology 1 uses the heterogeneous texture of upper-thin-lower-thick, the upper of the second heated wall 12 is arranged in the first heated wall 11
Portion, and the thickness of the second heated wall 12 is made to be thicker than the thickness of the first heated wall 11, connecting pin 2 is connected to the second heated wall 12,
For connecting bolt, specifically, connecting pin 2 is connected with the electrode bolts in single crystal growing furnace, electric energy is reached by motor bolt to be added
Hot device, makes heater generate heat, since the first heated wall 11 is different with the thickness of the second heated wall 12, the thickness of the second heated wall 12
It is thicker than the thickness of the first heated wall 11, so that the heat radiation that crucible bottom is subject to is smaller, reduces the intensity of melt convection, into
And reach the technical effect of the quality and quality that improve silicon crystal.
Further, the thickness ratio of the first heated wall 11 and the second heated wall 12 is 1 to 2.In the present embodiment, further limit
The thickness for having determined the first heated wall 11 and the second heated wall 12, by the thickness of the first heated wall 11 and the second heated wall 12 than being arranged
It is 1 to 2, is found through experiments that, it, can be to greatest extent when the thickness ratio of the first heated wall 11 and the second heated wall 12 is 1 to 2
Reduction melt convection intensity, further reach improve silicon crystal quality and quality technical effect.
Further, the height ratio of the first heated wall 11 and the second heated wall 12 is 7 to 4.In the present embodiment, further limit
The height for having determined the first heated wall 11 and the second heated wall 12 sets the height of the first heated wall 11 and the second heated wall 12 to
7 to 4, the size of crucible increases with the increase of the height of heated wall, by improving the first heated wall 11 and the second heated wall
12 height can effectively improve the production efficiency of silicon crystal, be obtained by experiment, when the first heated wall 11 and the second heating
When the height ratio of wall 12 is 7 to 4, the intensity of melt convection in crucible can be further decreased, the matter of silicon crystal is further increased
Amount and quality.
Further, as shown in Figure 1, ontology 1 further includes connection wall 13, the setting of connection wall 13 is in the first heated wall 11 and the
Between two heated walls 12, for connecting the first heated wall 11 and the second heated wall 12.In the present embodiment, ontology is further defined
1, the effect of connection wall 13 is that the first heated wall 11 of connection and the second heated wall 12, connection wall 13 play excessive effect, makes the
One heated wall 11 and the second heated wall 12 must connect more smoothly.
Further, as shown in Fig. 2, connection wall 13 has opposite first side 131 and second side 132, the first side
Face 131 is connected with the first heated wall 11, and second side 132 is connected with the second heated wall 12, wherein first side 131 with
The thickness of first heated wall 11 is identical, and second side 132 is identical as the thickness of the second heated wall 12.In the present embodiment, further
Define that connection wall 13, first side 131 are connected with the first heated wall 11, second side 132 is connected with the second heated wall 12
It connects, wherein first side 131 is identical as the thickness of the first heated wall 11, the thickness phase of second side 132 and the second heated wall 12
Together, that is to say, that the thickness of two sides of connection wall 13 is different, connect the first connection wall 13 and the second heated wall 12 must more
It is smooth, it is therefore an objective to avoid the safety that single crystal furnace heater is improved the phenomenon that striking sparks on ontology 1.
Further, the first heated wall 11, the second heated wall 12 and connection wall 13 are an integral molding structure.The present embodiment
In, ontology 1 is further defined, the setting of the first heated wall 11, the second heated wall 12 and connection wall 13 is an integral molding structure,
First heated wall 11, the second heated wall 12 and connection wall 13 can obtain integrally formed ontology 1 in such a way that mold pours,
It can also in other way, as long as the first heated wall 11, the second heated wall 12 and connection wall 13 are an integral molding structure i.e.
Can, ontology 1 generallys use graphite material, and graphite material can obtain integrally formed ontology 1 in such a way that mold pours, into
And reach the technical effect for facilitating processing ontology 1.
Further, as shown in Fig. 2, connection wall 13 also has third side 133, third side 133 is arranged in the first side
Between face 131 and second side 132, and it is located at the inside of ontology 1, third side 133 is cambered surface.In the present embodiment, into one
Step defines connection wall 13, and third side 133 is arranged between first side 131 and second side 132, and is located at ontology 1
Inside, third side 133 be cambered surface, so that the connection of the first connection wall 13 and the second heated wall 12 is formed round and smooth
Third side 133, avoid the safety that single crystal furnace heater is further increased the phenomenon that striking sparks on ontology 1.
Further, third side 133 is arc angling face.In the present embodiment, third side 133 is further defined,
Make 133 arc angling face of third side, that is to say, that the position that the first heated wall 11 is connected with connection wall 13 is circular arc
Angle, the position that the second heated wall 12 is connected with connection wall 13 is also arc chord angle, and the first heated wall 11 is enabled to pass through third
Side 133 is excessively to the second heated wall 12, and in junction of first heated wall 11 with connection wall 13 and the first heated wall
11 and the junction of connection wall 13 be all not in corner angle, to avoid further increasing the phenomenon that striking sparks on ontology 1
The safety of single crystal furnace heater.
Further, connecting pin 2 includes interconnecting piece 21 and sole 22, and one end of interconnecting piece 21 is removably connected to second and adds
Hot wall 12, the other end are fixedly connected on sole 22, and sole 22 has opposite the 4th side 221 and the 5th side 222, the 4th
The first connecting hole 223 is arranged in side 221, the second connecting hole 224 is arranged in the 5th side 222, the first connecting hole 223 and second connects
It connects hole 224 to be interconnected, wherein the diameter of the first connecting hole 223 is greater than the diameter of the second connecting hole 224.In the present embodiment, into
One step defines connecting pin 2, is arranged the first connecting hole 223 and the second connecting hole 224 on connecting pin 2, the first connecting hole 223 with
Second connecting hole 224 is interconnected, wherein the diameter of the first connecting hole 223 is greater than the diameter of the second connecting hole 224, single crystal growing furnace
When the bolt that heater is connect with graphite electrode is attached, the screw rod of bolt is placed in the second connecting hole 224, bolt
Nut can be placed in the first connecting hole 223, makes the top of nut lower than first side 131, improves under crucible crucible position
Space is dropped, the raw material quantity of secondary batching is increased, and then has reached the technical effect for improving the production efficiency of monocrystalline silicon.
Further, interconnecting piece 21 is an integral molding structure with sole 22.In the present embodiment, connecting pin is further defined
2, interconnecting piece 21 is attached with sole 22 by integrally formed mode, that is to say, that interconnecting piece 21 becomes with sole 22
One entirety can be formed between interconnecting piece 21 and sole 22 by mold one-time-concreting, can also by other one at
The mode of type forms integrated formed structure, and interconnecting piece 21 and the setting of sole 22 are integrally formed structures, can be improved connection
The intensity and service life of foot 2, and then reach the technical effect for reducing cost.
Above description is only a specific implementation of the present invention, but the protection scope of the utility model is not limited to
In this, anyone skilled in the art within the technical scope disclosed by the utility model, can readily occur in variation
Or replacement, it should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should be with the power
Subject to the protection scope that benefit requires.
Claims (10)
1. a kind of single crystal furnace heater characterized by comprising
Ontology, the ontology include the first heated wall and the second heated wall, and the first heated wall setting is in second heating
The top of wall, wherein the thickness of second heated wall is thicker than the thickness of first heated wall；
Connecting pin, the connecting pin is connected to second heated wall, for connecting bolt.
2. single crystal furnace heater according to claim 1, which is characterized in that
The thickness ratio of first heated wall and second heated wall is 1 to 2.
3. single crystal furnace heater according to claim 2, which is characterized in that
The height ratio of first heated wall and second heated wall is 7 to 4.
4. single crystal furnace heater according to any one of claims 1 to 3, which is characterized in that
The ontology further includes connection wall, and the connection wall is arranged between first heated wall and second heated wall,
For connecting first heated wall and second heated wall.
5. single crystal furnace heater according to claim 4, which is characterized in that
The connection wall has opposite first side and second side, and the first side is connected with first heated wall
It connects, the second side is connected with second heated wall, wherein the thickness of the first side and first heated wall
Identical, the second side is identical as the thickness of second heated wall.
6. single crystal furnace heater according to claim 4, which is characterized in that
First heated wall, second heated wall and the connection wall are an integral molding structure.
7. single crystal furnace heater according to claim 5, which is characterized in that
The connection wall also has a third side, the third side setting the first side and the second side it
Between, and it is located at the inside of the ontology, the third side is cambered surface.
8. single crystal furnace heater according to claim 7, which is characterized in that
The third side is arc angling face.
9. single crystal furnace heater according to any one of claims 1 to 3, which is characterized in that
The connecting pin includes interconnecting piece and sole, and one end of the interconnecting piece is removably connected to second heated wall, separately
One end is fixedly connected on the sole, and the sole has opposite the 4th side and the 5th side, sets in the 4th side
The first connecting hole is set, the second connecting hole is set in the 5th side, first connecting hole and second connecting hole are mutual
Connection, wherein the diameter of first connecting hole is greater than the diameter of second connecting hole.
10. single crystal furnace heater according to claim 9, which is characterized in that
The interconnecting piece is an integral molding structure with the sole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820630638.7U CN208219008U (en) | 2018-04-28 | 2018-04-28 | Single crystal furnace heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820630638.7U CN208219008U (en) | 2018-04-28 | 2018-04-28 | Single crystal furnace heater |
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| Publication Number | Publication Date |
|---|---|
| CN208219008U true CN208219008U (en) | 2018-12-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820630638.7U Active CN208219008U (en) | 2018-04-28 | 2018-04-28 | Single crystal furnace heater |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109837593A (en) * | 2019-03-29 | 2019-06-04 | 徐州晶睿半导体装备科技有限公司 | Heater and single crystal growing furnace with it |
| CN114487000A (en) * | 2021-12-09 | 2022-05-13 | 清华大学 | Transient short hot wire method-based sub-supercritical fluid thermal conductivity testing device |
-
2018
- 2018-04-28 CN CN201820630638.7U patent/CN208219008U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109837593A (en) * | 2019-03-29 | 2019-06-04 | 徐州晶睿半导体装备科技有限公司 | Heater and single crystal growing furnace with it |
| CN114487000A (en) * | 2021-12-09 | 2022-05-13 | 清华大学 | Transient short hot wire method-based sub-supercritical fluid thermal conductivity testing device |
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