CN208183109U - A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting - Google Patents
A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting Download PDFInfo
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- CN208183109U CN208183109U CN201820058526.9U CN201820058526U CN208183109U CN 208183109 U CN208183109 U CN 208183109U CN 201820058526 U CN201820058526 U CN 201820058526U CN 208183109 U CN208183109 U CN 208183109U
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- octagon
- periphery
- silica crucible
- insulating layer
- silicon ingot
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 238000005266 casting Methods 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 238000010276 construction Methods 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims abstract description 20
- 239000002210 silicon-based material Substances 0.000 claims abstract description 14
- 239000007770 graphite material Substances 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 2
- 238000010248 power generation Methods 0.000 abstract description 11
- 238000005265 energy consumption Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model relates to a kind of manufacturing equipments of octagon polycrystalline silicon ingot casting, including furnace shell, in the inside of the furnace shell, setting is used for the silica crucible of built-in silicon material, guard board structure is coated in the periphery of the silica crucible, in the periphery of the guard board structure and top, heating mechanism is set, insulation construction is respectively arranged in the heating structure periphery and top, bottom, the insulation construction and heating structure combine to form thermal field, and multiple electrodes are connect through the furnace shell, insulation construction and with the heating structure.The utility model structure is simple, it is easy to use, it can make to improve yield 40% in ingot furnace equipment using the utility model, and greatly improve heating efficiency, reduce by 40% or more energy consumption of unit product, effect in terms of two above can lead to solar cell power generation cost and decline to a great extent, and make outstanding contributions for solar power generation cheap internet access.
Description
Technical field
The utility model relates to area of solar cell more particularly to a kind of eight sides applied to solar cell industry chain
The manufacturing equipment of conformal polysilicon ingot casting.
Background technique
With the gradually exhaustion of fossil energy, and irreversible pollution, the positive accelerated development in countries in the world are caused to environment
Renewable energy, it is desirable to be restructured the use of energy by renewable energy, maintain sustainable development.In new renewable energy,
Solar energy becomes the focus that people pay attention to as most potential new energy, with its exclusive advantage.Polycrystalline silicon ingot casting is too
Important basic link in positive energy battery industry chain, it is that advanced directional solidification technique is used in polycrystalline silicon ingot or purifying furnace, will
Condensation-crystallization is oriented into silicon ingot by special process after high-purity silicon material high temperature melting, (silicon wafer specification is using evolution slice
After 156*156mm), it could be used to produce solar battery sheet.How in the polycrystalline silicon ingot casting stage high quality, bottom cost produced
Polycrystal silicon ingot, to improve polysilicon solar cell transformation efficiency, and reduce cost and realize cheap internet access have extremely
Important role is closed, therefore, the method for polycrystalline silicon ingot casting (i.e. the manufacture of silicon ingot) is current those skilled in that art's research
Hot spot.
Existing silicon ingot production technology is to install rectangular thermal field in circular ingot furnace to utilize rectangular silica crucible cast silicon
Ingot, the silicon ingot produced are square.The technological process of production are as follows: high-purity silicon material is fitted into high-purity silica pot, is loaded onto pair
(because the maximum temperature of silicon ingot production is up to 1560 DEG C, and silica crucible exists for graphite protective plate that silica crucible plays a protective role
Can start to soften after 1280 DEG C, need graphite protective plate clamping to keep original shape), then be placed into ingot furnace together, it passes through
Cross vacuumize, heat, melting, crystallizing, annealing, cooling down and etc. after, complete the manufacture of entire silicon ingot.On the one hand, at present in the world
There are about 10000 or so ingot furnaces to use, wherein about 7000 in China, basic size has been formed, it is impossible to big again
Scale updates, therefore the production capacity of silicon ingot is limited in existing equipment.And rectangular thermal field is installed in circular ingot furnace, space benefit
It is not high with rate, it is only capable of using the silica crucible of 880*880*480mm, charge being about 550kg, 25 156*156mm can be outputed
Square rod, the weight that can be sliced is only 350kg or so, and corresponding final generator installation amount is about 6MW/.On the other hand, ingot furnace
For clearance-type high-temperature service, require heat to 1560 DEG C or so, be a kind of production equipment of high energy consumption, existing ingot casting form due to
Space utilization rate is low, causes the thermal efficiency low, calculates by charging 550kg, heating power 165kW at present, the thermal efficiency (silicon ingot
Heat required for physics, chemical change occurs in production process divided by heat consumed in whole process) it is only 65% left side
The right side, energy consumption of unit product reach 8.5kW.hr, result in this way solar cell industry have in this link higher electricity consumption at
This, is unfavorable for the cheap internet access of solar power generation, causes to hinder to the development of this renewable new energy of solar power generation.Thirdly
Aspect, the crucible for loading high-purity silicon material is high purity quartz material, and this material has a small amount of oxygen atom at high temperature and is diffused into silicon
In ingot, and it is brought into the cell piece of later period production, and oxygen atom is harmful element in cell piece, is to cause photo attenuation
(Light Induced Degradation, LID) main cause, oxygen atom are former to displacement boron under the action of excess
For sub quickly diffusion bond at boron oxygen complex, this boron oxygen complex is a kind of metastable state defect, forms complex centre, can have
The excess that generates in effect capture and compound solar battery under light illumination, thus significantly reduce minority carrier lifetime and
Shorten minority carrierdiffusion length, ultimately causes the decaying of solar cell photoelectric transfer efficiency.The side of silicon ingot four corners
Stick faces horizontal and vertical two silica crucible faces simultaneously, is influenced maximum by oxygen atom diffusion, is minimum in entire silicon ingot
Imitate position, need to reduce it class use, this reduces the generating efficiencies in whole later period, improve indirectly power generation at
This.
Utility model content
The applicant is directed to above-mentioned existing issue, has carried out Improvement, provides a kind of system of octagon polycrystalline silicon ingot casting
Manufacturing apparatus compares square quartz crucible high stability, and stress is more uniform, and high temperature deformation amount is small, the holding to shape
Better effect.
Technical solution used by the utility model is as follows:
A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting, including furnace shell, in the inside of the furnace shell, setting is for built-in
The silica crucible of silicon material coats guard board structure in the periphery of the silica crucible, sets in the periphery of the guard board structure and top
Heating mechanism is set, is respectively arranged insulation construction, the insulation construction and heating knot in the heating structure periphery and top, bottom
Structure combines to form thermal field, and multiple electrodes are connect through the furnace shell, insulation construction and with the heating structure.
As a further improvement of the above technical scheme:
The heating structure includes the top heater for being set to silica crucible top, further includes being set to outside guard board structure
The side heater in week also connects corner heater by screw nut assembly between each side heater adjacent each other,
Each side heater, corner heater are enclosed octagon heating structure；
The insulation construction includes the side insulating layer for being set to heating structure periphery, at the top of the side insulating layer
Insulating layer in covering, the side insulating layer bottom covering under insulating layer, the upper insulating layer, side insulating layer and under
Insulating layer combines to form octagon insulation construction；
The guard board structure includes the side guard plate and angle backplate enclosed along silica crucible periphery, and the angle backplate is by screw rod spiral shell
Female component is fixed between adjacent two blocks of side guard plates, and the angle backplate connects to form octagon guard board structure with side guard plate；
The silica crucible is octagon silica crucible；
The side guard plate, angle backplate are made of graphite material.
The beneficial effects of the utility model are as follows:
The utility model structure is simple, easy to use, can make to improve yield in ingot furnace equipment using the utility model
40%, and heating efficiency is greatly improved, 40% or more energy consumption of unit product is reduced, the effect in terms of two above can lead to the sun
Energy cell power generation cost declines to a great extent, and makes outstanding contributions for solar power generation cheap internet access.Compared with existing square silicon ingot,
Octagon silicon ingot is influenced to be substantially reduced in the square rod of four corners by oxygen atom diffusion, is reduced the photic of later period cell piece and is declined
Subtract, improves the efficiency of solar battery.
Detailed description of the invention
Fig. 1 is the main view of the utility model.
Fig. 2 is the top view of the utility model.
Fig. 3 is the structural schematic diagram of the octagon silicon ingot of the utility model manufacture.
Wherein: 101, electrode；102, furnace shell；103, side heater；104, side guard plate；105, side insulating layer；106,
Top heater；107, silica crucible；108, silicon material；109, corner heater；110, screw nut assembly；111, angle backplate；
112, upper insulating layer；113, lower insulating layer；201, silicon ingot.
Specific embodiment
Illustrate specific embodiment of the present utility model below.As shown in Figure 1 and Figure 2, a kind of octagon polycrystalline silicon ingot casting
Manufacturing equipment includes furnace shell 102, and in the inside of furnace shell 102, setting is used for the silica crucible 107 of built-in silicon material 108, in quartzy earthenware
The periphery of crucible 107 coats guard board structure, heating mechanism is arranged in the periphery of guard board structure and top, on heating structure periphery and top
Portion, bottom are respectively arranged insulation construction, and insulation construction and heating structure combine to form thermal field, and multiple electrodes 101 run through furnace shell
102, it insulation construction and is connect with heating structure.
As shown in Figure 1 and Figure 2, heating structure includes the top heater 106 for being set to 107 top of silica crucible, further includes
It is set to the side heater 103 of guard board structure periphery, also passes through screw rod spiral shell between each side heater 103 adjacent each other
Female component 110 connects corner heater 109, and each side heater 103, corner heater 109 are enclosed octagon heating knot
Structure；Side heater 103 and corner heater 109 are 4 in the utility model, be can guarantee in octagon silica crucible
Silicon material uniformly absorbs heat and radiates in entire production process, guarantees the quality of octagon silicon ingot 201.
As shown in Figure 1 and Figure 2, above-mentioned insulation construction includes the side insulating layer 105 for being set to heating structure periphery, in side
The top of face insulating layer 105 covers upper insulating layer 112, the insulating layer 113 under the covering of the bottom of side insulating layer 105, upper heat preservation
Layer 112, side insulating layer 105 and the combination of lower insulating layer 113 form octagon insulation construction.The hot spoke of octagon insulation construction
It penetrates effect and is much higher than existing quadrilateral structure, greatly improve the thermal efficiency.
As shown in Figure 1 and Figure 2, above-mentioned guard board structure includes that the side guard plate 104 enclosed along 107 periphery of silica crucible and angle are protected
Plate 111, angle backplate 111 are fixed between adjacent two blocks of side guard plates 104 by screw nut assembly 110, angle backplate 111 and side guard plate
104 connections form octagon guard board structure.Side guard plate 104, angle backplate 111 are made of graphite material.The arrangement energy of each backplate
Guarantee the shape at high temperature of octagon silica crucible 107, and its can by the importing of even heat, to going out silica crucible.
As shown in Figure 1 and Figure 2, above-mentioned silica crucible 107 is octagon silica crucible, and charge reaches 1100kg, than existing
The charge of square silica crucible doubles, and the production technology period after charge increase was increased to by original 60 hours
85 hours, calculating was got off, and practical production capacity promotes 40% or more, and every furnace increases to 45 square rod (such as Fig. 3 by 25 original square rods
It is shown), corresponding final generator installation amount is promoted by 6MW/ to about 9MW/.Based on the market retention of 10000 ingot furnaces
It calculates, the installation amount of about 30GW can be increased, be equivalent to the installation amount of 6 half Fukushima nuclear power stations.Moreover, because improving ingot furnace
The heat radiation of space utilization rate and all directions shape thermal field is better than square thermal field, and the thermal efficiency can be substantially improved to 85% or more, produce
Product energy consumption is reduced to 5kW.hr/kg, and 40% or more energy consumption reduction is right this reduces the electric cost of silicon ingot production link
Larger contribution is made that in the cost for reducing entire solar cell industry chain, conducive to the cheap internet access of solar power generation.
The manufacturing process for carrying out octagon polycrystalline silicon ingot casting using above equipment is as follows:
Step 1: silicon material is fitted into octagon silica crucible, muti-piece then is coated in the periphery of octagon silica crucible
Side guard plate and angle backplate, each side guard plate and angle backplate are enclosed octagon guard board structure；
Step 2: then the octagon silica crucible with octagon guard board structure is put into octagon insulation construction
Ingot furnace in；
Step 3: carrying out being evacuated to 1Pa to ingot furnace inside；
Step 4: carrying out being heated to 1175 DEG C to the silicon material inside silica crucible by electrode, heating structure, the heating side
Formula takes power control mode, and steam and impurity in silicon material are excluded by heating.
Step 5: being heated to sufficiently melting to the silicon material inside silica crucible by electrode, heating structure, heating temperature
Degree is 1540 DEG C；
Step 6: the silicon material sufficiently after fusing cools down and enters crystal growth phase, the speed of crystallization is 0.8cm/h,
In the step, cooling from bottom gradually up, make crystallization be also since bottom gradually up.
Step 7: the silicon ingot after crystallization is annealed by ingot furnace, annealing temperature is 1100 DEG C, eliminates silicon by annealing
Stress in ingot.
It comes out of the stove step 8: the silicon ingot that annealing is completed finally is cooled to 400 DEG C or less.
As shown in figure 3, manufactured octagon silicon ingot 201 can cut out 45 square rods having a size of 156*156mm, due to not having
There is the square rod in 4 corners, greatly reduce the quantity that the oxygen atom in silica crucible is diffused into square rod, reduces later period institute
The photo attenuation of the cell piece of production effectively promotes the transfer efficiency of cell piece, reduces solar power generation industrial chain indirectly
Cost.
The utility model structure is simple, easy to use, can make to improve yield in ingot furnace equipment using the utility model
40%, and heating efficiency is greatly improved, 40% or more energy consumption of unit product is reduced, the effect in terms of two above can lead to the sun
Energy cell power generation cost declines to a great extent, and makes outstanding contributions for solar power generation cheap internet access.Compared with existing square silicon ingot,
Octagon silicon ingot is influenced to be substantially reduced in the square rod of four corners by oxygen atom diffusion, is reduced the photic of later period cell piece and is declined
Subtract, improves the efficiency of solar battery.
Above description is the explanation to the utility model, is not the restriction to utility model, defined by the utility model
Range is referring to claim, and without prejudice to the basic structure of the utility model, the utility model can make any shape
The modification of formula.
Claims (4)
1. a kind of manufacturing equipment of octagon polycrystalline silicon ingot casting, it is characterised in that: including furnace shell (102), in the furnace shell (102)
Inside setting be used for built-in silicon material (108) silica crucible (107), the silica crucible (107) periphery coat backplate
Heating structure is arranged in the periphery of the guard board structure and top in structure, distinguishes in the heating structure periphery and top, bottom
Arrange that insulation construction, the insulation construction and heating structure combine to form thermal field, multiple electrodes (101) run through the furnace shell
(102), it insulation construction and is connect with the heating structure；
The heating structure includes the top heater (106) for being set to silica crucible (107) top, further includes being set to backplate
The side heater (103) of structure periphery also passes through screw nut assembly between each side heater (103) adjacent each other
(110) corner heater (109) are connected, each side heater (103), corner heater (109) are enclosed octagon heating
Structure；
The guard board structure includes the side guard plate (104) and angle backplate (111) enclosed along silica crucible (107) periphery, the angle
Backplate (111) is fixed between adjacent two blocks of side guard plates (104) by screw nut assembly (110), the angle backplate (111) and side
Backplate (104) connection forms octagon guard board structure.
2. the manufacturing equipment of octagon polycrystalline silicon ingot casting as described in claim 1, it is characterised in that: the insulation construction includes
It is set to the side insulating layer (105) of heating structure periphery, covers upper insulating layer at the top of the side insulating layer (105)
(112), the insulating layer (113) under the covering of the bottom of the side insulating layer (105), the upper insulating layer (112), side heat preservation
Layer (105) and lower insulating layer (113) combination form octagon insulation construction.
3. the manufacturing equipment of octagon polycrystalline silicon ingot casting as described in claim 1, it is characterised in that: the silica crucible
It (107) is octagon silica crucible.
4. the manufacturing equipment of octagon polycrystalline silicon ingot casting as described in claim 1, it is characterised in that: the side guard plate (104),
Angle backplate (111) is made of graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820058526.9U CN208183109U (en) | 2018-01-12 | 2018-01-12 | A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820058526.9U CN208183109U (en) | 2018-01-12 | 2018-01-12 | A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting |
Publications (1)
| Publication Number | Publication Date |
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| CN208183109U true CN208183109U (en) | 2018-12-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820058526.9U Expired - Fee Related CN208183109U (en) | 2018-01-12 | 2018-01-12 | A kind of manufacturing equipment of octagon polycrystalline silicon ingot casting |
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| CN (1) | CN208183109U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108004589A (en) * | 2018-01-12 | 2018-05-08 | 无锡惠郡科技有限公司 | A kind of manufacture method and its manufacturing equipment of octagon polycrystalline silicon ingot casting |
| CN110387579A (en) * | 2019-08-05 | 2019-10-29 | 江苏协鑫硅材料科技发展有限公司 | A kind of method and casting single crystal silicon ingot using octagon ingot casting thermal field casting single crystal |
| CN114045553A (en) * | 2021-02-23 | 2022-02-15 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot furnace, ingot crystalline silicon and preparation method thereof |
-
2018
- 2018-01-12 CN CN201820058526.9U patent/CN208183109U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108004589A (en) * | 2018-01-12 | 2018-05-08 | 无锡惠郡科技有限公司 | A kind of manufacture method and its manufacturing equipment of octagon polycrystalline silicon ingot casting |
| CN110387579A (en) * | 2019-08-05 | 2019-10-29 | 江苏协鑫硅材料科技发展有限公司 | A kind of method and casting single crystal silicon ingot using octagon ingot casting thermal field casting single crystal |
| CN114045553A (en) * | 2021-02-23 | 2022-02-15 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot furnace, ingot crystalline silicon and preparation method thereof |
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Granted publication date: 20181204 |