CN207811932U - A kind of Edge Heating device of quasi- G7 ingot castings thermal field - Google Patents

A kind of Edge Heating device of quasi- G7 ingot castings thermal field Download PDF

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Publication number
CN207811932U
CN207811932U CN201721801239.4U CN201721801239U CN207811932U CN 207811932 U CN207811932 U CN 207811932U CN 201721801239 U CN201721801239 U CN 201721801239U CN 207811932 U CN207811932 U CN 207811932U
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CN
China
Prior art keywords
heating device
thermal field
quasi
ingot
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201721801239.4U
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Chinese (zh)
Inventor
董朝龙
张泽兴
黄林
雷杰
张小东
洪炳华
漆龙武
张胜强
康秀娥
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JIANGXI SORNID HI-TECH Co Ltd
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JIANGXI SORNID HI-TECH Co Ltd
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Priority to CN201721801239.4U priority Critical patent/CN207811932U/en
Application granted granted Critical
Publication of CN207811932U publication Critical patent/CN207811932U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

A kind of Edge Heating device of quasi- G7 ingot castings thermal field, including the ingot furnace that internal diameter is 1830mm, thermal insulating steel cage is equipped in the ingot furnace, thermal field attemperator made of carbon felt material thermal insulation board is installed on thermal insulating steel cage, heating device is installed on the inside of thermal field attemperator, the heating device includes multiple side heaters and side angle heater, is connected two-by-two by corner connection sheet between side heaters and side angle heater, and the heating device is connected to electrode supply by graphite arm heating plate.The Edge Heating device of the utility model can promote crystal growth quality, reduce the primary dislocation of crystal, silica-base material minority carrier life time be improved, to improve silicon chip photoelectric conversion efficiency.

Description

A kind of Edge Heating device of quasi- G7 ingot castings thermal field
Technical field
The utility model is related to a kind of Edge Heating devices of quasi- G7 ingot castings thermal field.
Background technology
Photovoltaic generation is so that sunlight is mapped on silicon materials using interface, to which luminous energy is directly translated into electric energy A kind of technology.The developing history of short duration relative to the mankind, solar energy are that a kind of inexhaustible, nexhaustible huge energy is next Source, meanwhile, relative to traditional energy, solar energy has many advantages, such as persistence, spatter property and flexibility, and without dirt in conversion process Dye, noiseless not only directly can provide electric energy for compact electric apparatus, but also can generate electricity by way of merging two or more grid systems, answer without exploitation and transportational process It is wider with range.However as industry development, continually there is new competitor to enter this industry, make the competition of photovoltaic industry It is abnormal cruel.As the source of photovoltaic generation material manufacture, polycrystalline cast ingot is also required to continuous technological innovation to adapt to industry hair Open up paces.So in existing ingot furnace Equipment Foundations, undergo technological transformation, produce the crystal ingot of larger size and high quality at For a kind of future trend.
But after crystal ingot larger, it is desirable that heater assembly increases and is heated evenly to crystal ingot thermal exposure, common Heating devices heat surface radiation amount is insufficient, especially relatively low to silicon ingot side angle position thermal exposure, be easy to cause crystal ingot occur crystallite, The bad phenomenons such as high dislocation, edge containment concentration are high, minority carrier life time is low.
Utility model content
Its purpose of the utility model, which is that, provides a kind of Edge Heating device of quasi- G7 ingot castings thermal field, solves common Heating devices heat surface radiation amount it is insufficient, it is especially relatively low to silicon ingot side angle position thermal exposure, be easy to cause crystal ingot occur it is micro- The bad phenomenons such as brilliant, high dislocation, edge containment concentration are high, minority carrier life time is low.
It adopts the technical scheme that, a kind of Edge Heating device of quasi- G7 ingot castings thermal field, wraps to achieve the above object The ingot furnace that internal diameter is 1830mm is included, thermal insulating steel cage is equipped in the ingot furnace, the heat preservation of carbon felt material is installed on thermal insulating steel cage Thermal field attemperator made of plate, thermal field attemperator inside are equipped with heating device, and the heating device includes multiple sides Heater and side angle heater, are connected between side heaters and side angle heater by corner connection sheet two-by-two, the heating Device is connected to electrode supply by graphite arm heating plate.
Advantageous effect
The utility model has the following advantages compared with prior art.
The utility model has the advantages that improving quasi- G7 crystal ingots side angle region and other regional temperature uneven phenomenons, reduce Crystal ingot transverse temperature gradient, being conducive to, which improves edge containment, gathers and crystallite, reduces the generation of the primary dislocation of crystal, improves crystal Minority carrier life time you, to improve silicon chip photoelectric conversion efficiency.
Description of the drawings
Below in conjunction with attached drawing, the utility model is described in further detail.
Fig. 1 is the structural schematic diagram of the utility model;
Fig. 2 is connecting flange structure schematic diagram in the utility model;
Fig. 3 is side angle heater structure schematic diagram in the utility model;
Fig. 4 is corner connection sheet structural schematic diagram in the utility model.
Specific implementation mode
The present apparatus includes the ingot furnace 1 that internal diameter is 1830mm, as Figure 1-Figure 4, thermal insulating steel is equipped in the ingot furnace 1 Cage 2 is equipped with thermal field attemperator 3 made of carbon felt material thermal insulation board, the 3 inside installation of thermal field attemperator on thermal insulating steel cage 2 It includes multiple side heaters 5 and side angle heater 7 to have heating device 8, the heating device 8, and side heaters 5 and side angle add It is connected two-by-two by corner connection sheet 6 between hot device 7, the heating device 8 is connected to electrode electricity by graphite arm heating plate 4 Source.
The side heaters 5 and side angle heater 7 are 4 pieces, between every piece of side heaters 5 and side angle heater 7 It is connected with each other by corner connection sheet 6, corner connection sheet 6 is 8 pieces.
4 pieces of side heaters 5 are the curvilinear structures of identical appearance, wherein 3 pieces of upper setting installation graphite arms The length range of the trepanning of heating plate 4, side heaters 5 is 750-850mm, altitude range 300-350mm.
4 pieces of side angle heaters 7 are identical arch bridge-type structure, and the length range of side angle heater 7 is 300- 400mm, altitude range 300-350mm.
The corner connection sheet 6 is the structure of dog-ear ranging from 130-140 degree.
The utility model is directed at the special designing of four side heaters structures in G7 ingot furnace thermal fields, and to four side angles Position Design is U-shaped Novel heating structure, and entire heating device is connected using eight corner connection sheets, the edge of all designs Heating device selects high-purity isostatic pressing formed graphite material.By installing novel special Edge Heating device inside thermal field, can make Crystal ingot longitudinal temperature gradient, which increases, is conducive to induction high-quality crystal initial stage forming core and later stage length crystalline substance, while can reduce crystal ingot transverse direction Conducive to improving, edge containment gathers temperature gradient and crystallite is formed.For ingot furnace thermal field performance, heater is rationally matched Set most important to improving crystal defect, the Edge Heating device of the utility model can promote crystal growth quality, reduce brilliant The primary dislocation of body improves silica-base material minority carrier life time, to improve silicon chip photoelectric conversion efficiency.

Claims (5)

1. a kind of Edge Heating device of quasi- G7 ingot castings thermal field, including internal diameter are the ingot furnace of 1830mm(1), feature exists In the ingot furnace(1)It is interior to be equipped with thermal insulating steel cage(2), thermal insulating steel cage(2)On thermal field made of carbon felt material thermal insulation board is installed Attemperator(3), thermal field attemperator(3)Inside is equipped with heating device(8), the heating device(8)Including multiple sides Heater(5)With side angle heater(7), side heaters(5)With side angle heater(7)Between pass through corner connection sheet(6)Two Two are connected, the heating device(8)Pass through graphite arm heating plate(4)It is connected to electrode supply.
2. a kind of Edge Heating device of quasi- G7 ingot castings thermal field according to claim 1, which is characterized in that the side Heater(5)With side angle heater(7)It is 4 pieces, every piece of side heaters(5)With side angle heater(7)Between pass through corner Connection sheet(6)It is connected with each other, corner connection sheet(6)It is 8 pieces.
3. a kind of Edge Heating device of quasi- G7 ingot castings thermal field according to claim 1 or 2, which is characterized in that described 4 pieces of side heaters(5)For the curvilinear structures of identical appearance, graphite arm heating plate is installed in 3 pieces of upper settings wherein(4)'s Trepanning, side heaters(5)Length range be 750-850mm, altitude range 300-350mm.
4. a kind of Edge Heating device of quasi- G7 ingot castings thermal field according to claim 1 or 2, which is characterized in that described 4 pieces of side angle heaters(7)For identical arch bridge-type structure, side angle heater(7)Length range be 300-400mm, height model It encloses for 300-350mm.
5. a kind of Edge Heating device of quasi- G7 ingot castings thermal field according to claim 1 or 2, which is characterized in that described Corner connection sheet(6)For the structure of dog-ear ranging from 130-140 degree.
CN201721801239.4U 2017-12-21 2017-12-21 A kind of Edge Heating device of quasi- G7 ingot castings thermal field Expired - Fee Related CN207811932U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721801239.4U CN207811932U (en) 2017-12-21 2017-12-21 A kind of Edge Heating device of quasi- G7 ingot castings thermal field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721801239.4U CN207811932U (en) 2017-12-21 2017-12-21 A kind of Edge Heating device of quasi- G7 ingot castings thermal field

Publications (1)

Publication Number Publication Date
CN207811932U true CN207811932U (en) 2018-09-04

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CN201721801239.4U Expired - Fee Related CN207811932U (en) 2017-12-21 2017-12-21 A kind of Edge Heating device of quasi- G7 ingot castings thermal field

Country Status (1)

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CN (1) CN207811932U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107829136A (en) * 2017-12-21 2018-03-23 江西旭阳雷迪高科技股份有限公司 A kind of Edge Heating system of quasi- G7 ingot castings thermal field

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107829136A (en) * 2017-12-21 2018-03-23 江西旭阳雷迪高科技股份有限公司 A kind of Edge Heating system of quasi- G7 ingot castings thermal field

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180904

Termination date: 20211221

CF01 Termination of patent right due to non-payment of annual fee