CN107829136A - A kind of Edge Heating system of quasi- G7 ingot castings thermal field - Google Patents
A kind of Edge Heating system of quasi- G7 ingot castings thermal field Download PDFInfo
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- CN107829136A CN107829136A CN201711391671.5A CN201711391671A CN107829136A CN 107829136 A CN107829136 A CN 107829136A CN 201711391671 A CN201711391671 A CN 201711391671A CN 107829136 A CN107829136 A CN 107829136A
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- Prior art keywords
- heater
- thermal field
- quasi
- ingot
- thermal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Resistance Heating (AREA)
Abstract
A kind of Edge Heating system of quasi- G7 ingot castings thermal field, including the ingot furnace that internal diameter is 1830mm, thermal insulating steel cage is provided with the ingot furnace, thermal field attemperator made of carbon felt material thermal insulation board is installed on thermal insulating steel cage, heater is installed on the inside of thermal field attemperator, the heater includes multiple side heaters and side angle heater, is connected two-by-two by corner connection sheet between side heaters and side angle heater, and the heater connects electrode supply by graphite arm heating plate.The Edge Heating device of the present invention can lift crystal growth quality, reduce the primary dislocation of crystal, silica-base material minority carrier life time be improved, so as to improve silicon chip photoelectric transformation efficiency.
Description
Technical field
The present invention relates to a kind of Edge Heating system of quasi- G7 ingot castings thermal field.
Background technology
Photovoltaic generation is sunshine is mapped on silicon materials using interface, so as to which luminous energy is directly translated into electric energy
A kind of technology.Relative to the developing history that the mankind are of short duration, solar energy is that a kind of inexhaustible, nexhaustible huge energy is come
Source, meanwhile, relative to traditional energy, solar energy has the advantages that persistence, spatter property and flexibility, and without dirt in conversion process
Dye, noiseless, without exploitation and transportation, both electric energy directly can be provided for compact electric apparatus, can be generated electricity by way of merging two or more grid systems again, should
It is wider with scope.However as industry development, continually there is new competitor to enter this industry, make the competition of photovoltaic industry
It is abnormal cruel.As the source of photovoltaic generation material manufacture, polycrystalline cast ingot is also required to continuous technological innovation to adapt to industry hair
Open up paces.So in existing ingot furnace Equipment Foundations, undergo technological transformation, the crystal ingot of production more large scale and high quality into
For a kind of future trend.
But after crystal ingot larger, it is desirable to heater assembly increases and is heated evenly to crystal ingot thermal exposure, common
Heating devices heat surface radiation amount deficiency, it is especially relatively low to silicon ingot side angle position thermal exposure, easily cause crystal ingot occur crystallite,
The bad phenomenons such as high dislocation, edge containment concentration are high, minority carrier life time is low.
The content of the invention
Its purpose of the invention, which is that, provides a kind of Edge Heating system of quasi- G7 ingot castings thermal field, solves common add
Thermal heating surface amount of radiation deficiency, it is especially relatively low to silicon ingot side angle position thermal exposure, easily cause crystal ingot and crystallite, height occur
The bad phenomenons such as dislocation, edge containment concentration are high, minority carrier life time is low.
Adopt the technical scheme that, a kind of Edge Heating system of quasi- G7 ingot castings thermal field, wrap to achieve the above object
The ingot furnace that internal diameter is 1830mm is included, thermal insulating steel cage is provided with the ingot furnace, the insulation of carbon felt material is installed on thermal insulating steel cage
Thermal field attemperator made of plate, thermal field attemperator inner side are provided with heater, and the heater includes multiple sides
Heater and side angle heater, are connected two-by-two between side heaters and side angle heater by corner connection sheet, the heating
Device connects electrode supply by graphite arm heating plate.
Beneficial effect
The present invention has advantages below compared with prior art.
It is an advantage of the invention that improving quasi- G7 crystal ingots side angle region and other regional temperature uneven phenomenons, crystal ingot is reduced
Transverse Temperature Gradient, being advantageous to, which improves edge containment, gathers and crystallite, reduces the generation of the primary dislocation of crystal, improves the few son of crystal
Life-span you, so as to improve silicon chip photoelectric transformation efficiency.
Brief description of the drawings
Below in conjunction with accompanying drawing, the invention will be further described.
Fig. 1 is the structural representation of the present invention；
Fig. 2 is connecting flange structure schematic diagram in the present invention；
Fig. 3 is side angle heater structure schematic diagram in the present invention；
Fig. 4 is corner connection sheet structural representation in the present invention.
Embodiment
The system includes the ingot furnace 1 that internal diameter is 1830mm, as Figure 1-Figure 4, thermal insulating steel is provided with the ingot furnace 1
Cage 2, thermal field attemperator 3 made of carbon felt material thermal insulation board is provided with thermal insulating steel cage 2, and the inner side of thermal field attemperator 3 is installed
There is heater 8, the heater 8 includes multiple side heaters 5 and side angle heater 7, and side heaters 5 and side angle add
It is connected two-by-two by corner connection sheet 6 between hot device 7, the heater 8 connects electrode electricity by graphite arm heating plate 4
Source.
The side heaters 5 and side angle heater 7 are 4 pieces, between every piece of side heaters 5 and side angle heater 7
It is connected with each other by corner connection sheet 6, corner connection sheet 6 is 8 pieces.
4 pieces of described side heaters 5 are the curvilinear structures of identical appearance, and 3 pieces of upper set install graphite arm wherein
The perforate of heating plate 4, the length range of side heaters 5 is 750-850mm, altitude range 300-350mm.
4 pieces of described side angle heaters 7 are identical arch bridge-type structure, and the length range of side angle heater 7 is 300-
400mm, altitude range 300-350mm.
The corner connection sheet 6 is the structure that knuckle scope is 130-140 degree.
The particular design of four side heaters structures in present invention alignment G7 ingot furnace thermal fields, and to four side angle positions
U-shaped Novel heating structure is designed as, whole heater is connected using eight corner connection sheets, the Edge Heating of all designs
Device selects high-purity isostatic pressing formed graphite material.By installing new special Edge Heating device inside thermal field, crystal ingot can be made
Longitudinal temperature gradient increase is beneficial to induction high-quality crystal forming core at initial stage and later stage length is brilliant, while can reduce crystal ingot transverse temperature
Beneficial to improving, edge containment gathers gradient and crystallite is formed.For ingot furnace thermal field performance, the reasonable disposition pair of heater
It is most important to improve crystal defect, Edge Heating device of the invention can lift crystal growth quality, reduce the primary position of crystal
Mistake, silica-base material minority carrier life time is improved, so as to improve silicon chip photoelectric transformation efficiency.
Claims (5)
1. a kind of Edge Heating system of quasi- G7 ingot castings thermal field, including the ingot furnace that internal diameter is 1830mm（1）, its feature exists
In the ingot furnace（1）It is interior to be provided with thermal insulating steel cage（2）, thermal insulating steel cage（2）On thermal field made of carbon felt material thermal insulation board is installed
Attemperator（3）, thermal field attemperator（3）Inner side is provided with heater（8）, the heater（8）Including multiple sides
Heater（5）With side angle heater（7）, side heaters（5）With side angle heater（7）Between pass through corner connection sheet（6）Two
Two are connected, the heater（8）Pass through graphite arm heating plate（4）Connect electrode supply.
A kind of 2. Edge Heating system of quasi- G7 ingot castings thermal field according to claim 1, it is characterised in that the side
Heater（5）With side angle heater（7）It is 4 pieces, every piece of side heaters（5）With side angle heater（7）Between pass through corner
Connection sheet（6）It is connected with each other, corner connection sheet（6）For 8 pieces.
3. the Edge Heating system of a kind of quasi- G7 ingot castings thermal field according to claim 1 or 2, it is characterised in that described
4 pieces of side heaters（5）For the curvilinear structures of identical appearance, graphite arm heating plate is installed in 3 pieces of upper settings wherein（4）'s
Perforate, side heaters（5）Length range be 750-850mm, altitude range 300-350mm.
4. the Edge Heating system of a kind of quasi- G7 ingot castings thermal field according to claim 1 or 2, it is characterised in that described
4 pieces of side angle heaters（7）For identical arch bridge-type structure, side angle heater（7）Length range be 300-400mm, height model
Enclose for 300-350mm.
5. the Edge Heating system of a kind of quasi- G7 ingot castings thermal field according to claim 1 or 2, it is characterised in that described
Corner connection sheet（6）For the structure that knuckle scope is 130-140 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711391671.5A CN107829136A (en) | 2017-12-21 | 2017-12-21 | A kind of Edge Heating system of quasi- G7 ingot castings thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711391671.5A CN107829136A (en) | 2017-12-21 | 2017-12-21 | A kind of Edge Heating system of quasi- G7 ingot castings thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107829136A true CN107829136A (en) | 2018-03-23 |
Family
ID=61645240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711391671.5A Pending CN107829136A (en) | 2017-12-21 | 2017-12-21 | A kind of Edge Heating system of quasi- G7 ingot castings thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107829136A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105780108A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Method for modifying G5 polycrystal ingot furnace into G6 polycrstal ingot furnace |
| CN105803526A (en) * | 2016-05-17 | 2016-07-27 | 江西旭阳雷迪高科技股份有限公司 | Polycrystal ingot furnace thermal field |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207811932U (en) * | 2017-12-21 | 2018-09-04 | 江西旭阳雷迪高科技股份有限公司 | A kind of Edge Heating device of quasi- G7 ingot castings thermal field |
-
2017
- 2017-12-21 CN CN201711391671.5A patent/CN107829136A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105780108A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Method for modifying G5 polycrystal ingot furnace into G6 polycrstal ingot furnace |
| CN105803526A (en) * | 2016-05-17 | 2016-07-27 | 江西旭阳雷迪高科技股份有限公司 | Polycrystal ingot furnace thermal field |
| CN106702485A (en) * | 2017-03-14 | 2017-05-24 | 晶科能源有限公司 | Polycrystal ingot furnace |
| CN207811932U (en) * | 2017-12-21 | 2018-09-04 | 江西旭阳雷迪高科技股份有限公司 | A kind of Edge Heating device of quasi- G7 ingot castings thermal field |
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Application publication date: 20180323 |