CN104505424A - Device reducing light degradation of solar cell and method thereof - Google Patents
Device reducing light degradation of solar cell and method thereof Download PDFInfo
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- CN104505424A CN104505424A CN201410407578.9A CN201410407578A CN104505424A CN 104505424 A CN104505424 A CN 104505424A CN 201410407578 A CN201410407578 A CN 201410407578A CN 104505424 A CN104505424 A CN 104505424A
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- cell piece
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 230000015556 catabolic process Effects 0.000 title abstract 2
- 238000006731 degradation reaction Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000005286 illumination Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 210000000481 breast Anatomy 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010835 comparative analysis Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- SRCJDTOFMBRRBY-UHFFFAOYSA-N boron indium Chemical compound [B].[In] SRCJDTOFMBRRBY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a device reducing light degradation of a solar cell and a method thereof. The device is simple in structure and is easy to product in volume. The device comprises a thermostat, a left conducting plate, a right conducting plate, and a plurality of insulating support rods. The insulating support rods are installed in the thermostat. Two ends of the insulating support rod are respectively disposed on the left side surface and the right side surface of the thermostat. The left conducting plate and the right conducting plate are disposed in the thermostat and are installed on the insulating support rods. A constant current DC power supply is connected between the left conducting plate and the right conducting plate. A first voltmeter is connected with the left conducting plate and the right conducting plate. The middle of the internal of the thermostat is also provided with two pieces of sheet metal. A second voltmeter is connected between the two pieces of sheet metal. Beneficial effects of the device are that production technology of a production line is not changed, devices and equipment which are very expensive and occupy large land are not needed, original electrical performance and efficiency of a cell piece are not changed, the device is simple in structure, easy in mass production, obvious in effect, little in power consumption, high in yield, and high in reliability.
Description
Technical field
The present invention relates to field of photovoltaic technology, refer in particular to a kind of devices and methods therefor reducing solar cell photo attenuation.
Background technology
Replace traditional energy generation technology as one, " photovoltaic " is considered to one of the most promising New Energy Industry.In the last few years, the photovoltaic industry extensive development based on crystal silicon solar batteries, photovoltaic products had been used to each place, industry-by-industry.But along with the development of industry, the raising of demand, in photovoltaic products production process, many problems also annoying people in the industry always.Such as: the photo attenuation phenomenon of solar cell, assembly all cannot be well solved always in industrialization is produced.Current main product with boron doped crystal silicon solar batteries, silicon chip is mainly with traditional vertical pulling (CZ) single crystal process, in crystal silicon chip production process, introduce the foreign ion such as oxygen, iron, make solar cell in During Illumination, produce boron-oxygen complex, cause battery minority carrier life time to reduce, photoelectric conversion efficiency declines to a great extent, and principle is as follows:
As described above, traditional battery, component process to solve photo attenuation phenomenon, and current solar cell photo attenuation of avoiding mainly contains following several method:
(1) in traditional C Z single crystal process, increase Magnetic control, become the crystal-pulling of magnetic control vertical pulling (MCZ) method, reduce the oxygen content in silicon body;
(2) district is utilized to melt the crystal-pulling of (FZ) technology;
(3) p type single crystal silicon is prepared with the element substitution such as gallium, indium boron;
(4) the n type single crystal silicon solar cell of phosphorus doping is prepared.
Although well-known above four kinds of methods can reduce or avoid solar cell photo attenuation phenomenon, affect by the factor such as cost, market, these methods also cannot be promoted.MCZ crystal-pulling cost is high, certainly will increase photovoltaic products manufacture, application cost; FZ technique is mainly used in some high-end semiconductor applications at present, and technique, equipment cost are high; Overall application cannot be obtained in field of solar energy; The element such as gallium, indium can avoid light decay phenomenon, but the segregation coefficient of these elements in silicon is low, and the P-type silicon sheet rate of finished products of the composite demand prepared is low; The N-type silicon solar cell of phosphorus doping can avoid photo attenuation phenomenon due to it, enjoys light to note, but preparation N-type solar cell needs thoroughly to change current conventional batteries production technology.
Chinese patent Authorization Notice No.: CN201450015U, authorized announcement date on May 5th, 2010, disclose a kind of device improving crystal silicon solar cell sheet light induced attenuation characteristic, comprise thermal-insulating body and cell piece conveyer belt, the active section of cell piece conveyer belt is horizontal through thermal-insulating body; Evenly some illumination lamps and air jet pipe is laid, the some heater elements of even laying below thermal-insulating body inside, cell piece conveyer belt active section above thermal-insulating body inside, cell piece conveyer belt active section.This device adopts the method for heating illumination to implement process to crystal silicon solar cell sheet.Electrical property attenuation problem can be solved under the prerequisite not damaging other performances of crystal silicon solar cell sheet, make the efficiency of cell piece remain on a higher level.The weak point of this utility model is, adopt its effect of this device not obviously, power consumption is higher, output is not high.
Summary of the invention
There is above-mentioned deficiency to overcome in prior art in the present invention, provides a kind of structure simple and be easy to the devices and methods therefor of the minimizing solar cell photo attenuation of mass production.
To achieve these goals, the present invention is by the following technical solutions:
A kind of device reducing solar cell photo attenuation, comprise insulating box, left conductive plate, right conductive plate and some insulating support rods, described insulating box is an openable cuboid of upper cover, described insulating support rod is arranged on the inside of insulating box, the two ends of described insulating support rod are placed in the left and right sides of insulating box respectively, described left conductive plate and right conductive plate to be placed in insulating box and to be arranged on insulating support rod, described left conductive plate and right conductive plate are placed in the left and right sides of insulating box respectively and parallel with left and right side, constant-current dc power supply is connected with between described left conductive plate and right conductive plate, the first voltmeter is connected with between described left conductive plate and right conductive plate, described insulating box bosom is also provided with two panels sheet metal, the second voltmeter is connected with between described two panels sheet metal.
In the present invention, some cell pieces to be placed in insulating box and to be placed between left conductive plate and right conductive plate, between the sheet of cell piece and sheet just, negative series connection contact, the two panels sheet metal connected by second voltmeter is clipped in the middle a cell piece two sides, and make left conductive plate, right conductive plate, cell piece and sheet metal form good contact, make cell piece through constant-current dc power supply Injection Current outside, and reprocessing is carried out in the uniform temperature environment at insulating box place, the boron oxygen complex of cell piece is reduced, oxonium ion reconfigures, complex forever loses power of regeneration, thus reach minimizing cell light induced attenuation phenomenon.The present invention does not change product line production technology, does not need very expensive, that floor space is large appliance arrangement, does not change the original electrical property of cell piece and efficiency, simple possible, with low cost, is easy to mass production.
As preferably, described left conductive plate and right conductive plate are equipped with a conductive plate push rod, the left and right sides that described conductive plate push rod leads to insulating box are outside.By regulating the relative position of left conductive plate and right conductive plate, meeting the locational requirement of cell piece between left conductive plate and right conductive plate, ensureing the reliability of this device.
As preferably, described left conductive plate and right conductive plate symmetrical.
As preferably, described left conductive plate and right conductive plate are all slidably connected at insulating support rod, and described insulating support rod is distributed in the edge of left conductive plate and right conductive plate.
As preferably, described insulating box covers and is arranged with the pore that two lead to insulating box inside.
Reduce a method for solar cell photo attenuation, concrete operation step is as follows:
(1) between the left conductive plate and right conductive plate of insulating box, place the cell piece group of one group of same shelves of conversion efficiency, the sheet of cell piece contacts with positive and negative series connection between sheet, the two panels sheet metal connected by second voltmeter is clipped in the middle a cell piece two sides, fixing left conductive plate and right conductive plate position, make left conductive plate, right conductive plate, cell piece and sheet metal form good contact;
(2) cover the upper cover of insulating box, the temperature of setting insulating box, allows whole casing preheating, and passes into nitrogen simultaneously, not oxidized in processing procedure for the protection of cell piece metal electrode;
(3) after preheating, lead to DC Forward Current to cell piece group, meanwhile, insulating box is heated up, is warmed up to certain value;
(4) under the condition of step (3), cell piece process 1-15min, observes the change in voltage of the first voltmeter, the second voltmeter simultaneously, records the second voltmeter curve over time, until the second voltmeter is in stable state;
(5) deenergization, stops heating, continues to keep logical nitrogen, for accelerating the cooling of insulating box and cell piece;
(6) electrical performance of cell crossed of test processes, and package assembling, carry out illumination under packaged assembly is placed sunlight, the quantity of illumination is 60KWh/m
2, then test suite photo attenuation situation.
As preferably, in step (2), the temperature of setting insulating box is 70-80 DEG C, allows whole casing preheating 3-5min.
As preferably, in step (3), the current density range leading to DC Forward Current to cell piece group is 2-20mA/cm
2, the temperature setting range that insulating box heats up is 120-150 DEG C.
The invention has the beneficial effects as follows: do not change and produce line production technology, do not need very expensive, that floor space is large appliance arrangement, do not change the original electrical property of cell piece and efficiency, structure is simple, and be easy to mass production, successful, power consumption is few, and output is high, and reliability is high.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the cross-sectional view at AA place in Fig. 1.
In figure: 1. upper strata, 2. lower floor, 3. intermediate layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As Fig. 1, in embodiment described in Fig. 2, a kind of device reducing solar cell photo attenuation, comprise insulating box, left conductive plate, right conductive plate and 9 insulating support rods, insulating box is that a upper cover can be opened, side is 200mm*200mm, length is the cuboid of 400mm, the material of main part of insulating box is resistant to elevated temperatures insulating material, insulating box can be heated to 300 DEG C, insulating support rod is arranged on the inside of insulating box, insulating support rod by insulation high-temperature-resistant and the material that can bear certain pressure be made, the two ends of insulating support rod are placed in the left and right sides of insulating box respectively, the area of left conductive plate and right conductive plate is 170mm*170mm, left conductive plate and right conductive plate to be placed in insulating box and to be arranged on insulating support rod, left conductive plate and right conductive plate are placed in the left and right sides of insulating box respectively and parallel with the left and right side of insulating box, left conductive plate and right conductive plate symmetrical in insulating box, left conductive plate and right conductive plate are all slidably connected at insulating support rod, insulating support rod is distributed in the edge of left conductive plate and right conductive plate, the distribution of 9 insulating support rods is respectively: the edge bottom of left conductive plate and right conductive plate 5, middle 2 and 2, top, the solid region that 9 insulating support rods and left conductive plate and right conductive plate surround is cell piece put area, the parallel left conductive plate of cell piece and right conductive plate, vertically be placed on the insulating support rod of bottom, the cross section of solid region is for be highly greater than 156mm, width is greater than the rectangular shape of 156mm, constant-current dc power supply is connected with between left conductive plate and right conductive plate, the first voltmeter is connected with between left conductive plate and right conductive plate, insulating box bosom is also provided with two panels sheet metal, the second voltmeter is connected with between two panels sheet metal, left conductive plate and right conductive plate are equipped with a conductive plate push rod, the left and right sides that conductive plate push rod leads to insulating box are outside, and conductive plate push rod material therefor is insulation high-temperature-resistant material, insulating box covers and is arranged with the pore that two lead to insulating box inside.
Based on the method for the minimizing solar cell photo attenuation that said apparatus adopts, concrete operation step is as follows:
(1) in the left conductive plate of insulating box and the middle cell piece group of placing one group of same shelves of conversion efficiency of right conductive plate, sheet in cell piece group contacts with positive and negative series connection between sheet, the two panels sheet metal connected by second voltmeter is clipped in the middle a cell piece two sides, left conductive plate and right conductive plate position is fixed by conductive plate push rod, make left conductive plate, right conductive plate, cell piece and sheet metal form good contact, can reach 100 by placing battery plate number with the device of the present invention's design;
(2) cover the upper cover of insulating box, the temperature of setting insulating box is 70-80 DEG C, allows the casing preheating 3-5min of whole insulating box, and passes into nitrogen simultaneously, and the metal electrode for the protection of cell piece is not oxidized in processing procedure;
(3) after preheating, DC Forward Current is led to cell piece group, current density range 2-20mA/cm
2(the size setting current value by individual cell piece), meanwhile, heated up by insulating box, temperature setting range is 120-150 DEG C;
(4) under the condition of step (3), cell piece process 1-15min, observes the change in voltage of the first voltmeter, the second voltmeter simultaneously, records the second voltmeter curve over time, until the second voltmeter is in stable state;
(5) deenergization, stops heating, continues to keep logical nitrogen, for accelerating casing and the cell piece cooling of insulating box;
(6) electrical performance of cell crossed of test processes, and package assembling, carry out illumination under packaged assembly is placed sunlight, the quantity of illumination is 60KWh/m2, then test suite photo attenuation situation.
Embodiment 1: be 19.0% by 100 conversion efficiencies, the length of side is that (cell piece area is 238.95cm for the single crystal battery sheet of 156mm
2), be placed in insulating box, fixing left conductive plate and right conductive plate, turn on the electricity, cover the upper cover of insulating box; Before energising, the temperature of setting insulating box is 70 DEG C and carries out preheating 3min, and starts to pass into N simultaneously
2; Preheating is complete, opening power, passes into the direct current of forward to cell piece, and current density is 3mA/cm
2, the temperature of insulating box is set in 125 DEG C of process simultaneously, keeps logical N
2; Observe the change of the first voltmeter, the second voltmeter, record the second voltmeter and be worth over time, until the second voltmeter is stablized; Treat that cell piece cools, take out its electrical property of cell slice test, contrast electrical property before treatment and efficiency situation; The cell piece processed is carried out component package, selects one group of cell piece also component package of not carrying out that process, same conversion efficiency gear simultaneously, in contrast, by two block assemblies illumination 60KWh/m under sunlight simultaneously
2, test suite photo attenuation situation; Comparative analysis, the cell piece processed, component power light decay within 1%, and contrasts assembly power attenuation and reaches 3%.
(cell piece area is 238.95cm to the single crystal battery sheet that 100 conversion efficiencies are 19.2% by embodiment 2: according to the method described in embodiment 1, the length of side is 156mm
2) process in the same way, the cell piece processed is carried out component package, selects one group of cell piece also component package of not carrying out that process, same conversion efficiency gear simultaneously, in contrast, by two block assemblies illumination 60KWh/m under sunlight simultaneously
2, test suite photo attenuation situation; Comparative analysis, the cell piece processed, component power light decay within 1%, and contrasts assembly power attenuation and reaches 3.5%.
Embodiment 3: the electric current factor passed into when considering cell piece process is on the impact of result, and on the basis of embodiment 1, changing the current density size passed into is 2mA/cm
2and 20mA/cm
2divide two groups to carry out, other condition is constant, and often group selects the single crystal battery sheet that 100 conversion efficiencies are 19.0%, the length of side is 156mm to test, and in Battery disposal process, analyzes the situation of change of the first voltmeter, the second voltmeter; Same in test battery electrical property and the efficiency of being disposed, and carry out component package, 60KWh/m
2sunlight illumination, contrast light decay result.Basically identical with the result in embodiment 1.
Embodiment 4: when considering cell piece process, temperature factor is on the impact of result, on the basis of embodiment 1, change temperature is 120 DEG C, 150 DEG C points two groups and carries out, other condition is constant, often group selects the single crystal battery sheet that 100 conversion efficiencies are 19.0%, the length of side is 156mm to test, in Battery disposal process, analyze U
1, U
2situation of change; Same in test battery electrical property and the efficiency of being disposed, and carry out component package, 60KWh/m
2sunlight illumination, contrast light decay result.Basically identical with the result in embodiment 1.
Embodiment 5: according to the scheme described in embodiment 1 and condition, (cell piece area is 243.36cm to select 100 conversion efficiencies are 17.6%, the length of side is 156mm polycrystalline cell piece
2) test; Carry out 60KWh/m equally
2illumination, obviously reduce through the polycrystalline cell piece assembly light decay processed.
Claims (8)
1. one kind is reduced the device of solar cell photo attenuation, it is characterized in that, comprise insulating box, left conductive plate, right conductive plate and some insulating support rods, described insulating box is an openable cuboid of upper cover, described insulating support rod is arranged on the inside of insulating box, the two ends of described insulating support rod are placed in the left and right sides of insulating box respectively, described left conductive plate and right conductive plate to be placed in insulating box and to be arranged on insulating support rod, described left conductive plate and right conductive plate are placed in the left and right sides of insulating box respectively and parallel with left and right side, crossing current DC power supply is connected with between described left conductive plate and right conductive plate, the first voltmeter is connected with between described left conductive plate and right conductive plate, described insulating box bosom is also provided with two panels sheet metal, the second voltmeter is connected with between described two panels sheet metal.
2. a kind of device reducing solar cell photo attenuation according to claim 1, is characterized in that, described left conductive plate and right conductive plate are equipped with a conductive plate push rod, and the left and right sides that described conductive plate push rod leads to insulating box are outside.
3. a kind of device reducing solar cell photo attenuation according to claim 1 and 2, is characterized in that, described left conductive plate and right conductive plate symmetrical.
4. a kind of device reducing solar cell photo attenuation according to claim 1 and 2, it is characterized in that, described left conductive plate and right conductive plate are all slidably connected at insulating support rod, and described insulating support rod is distributed in the edge of left conductive plate and right conductive plate.
5. a kind of device reducing solar cell photo attenuation according to claim 1 and 2, is characterized in that, described insulating box covers and is arranged with the pore that two lead to insulating box inside.
6. reduce a method for solar cell photo attenuation, it is characterized in that, concrete operation step is as follows:
(1) between the left conductive plate and right conductive plate of insulating box, place the cell piece group of one group of same shelves of conversion efficiency, the sheet of cell piece contacts with positive and negative series connection between sheet, the two panels sheet metal connected by second voltmeter is clipped in the middle a cell piece two sides, fixing left conductive plate and right conductive plate position, make left conductive plate, right conductive plate, cell piece and sheet metal form good contact;
(2) cover the upper cover of insulating box, the temperature of setting insulating box, allow the casing preheating of whole insulating box, and pass into nitrogen simultaneously, not oxidized in processing procedure for the protection of cell piece metal electrode;
(3) after preheating, lead to DC Forward Current to cell piece group, meanwhile, insulating box is heated up, is warmed up to certain value;
(4) under the condition of step (3), cell piece process 1-15min, observes the change in voltage of the first voltmeter, the second voltmeter simultaneously, records the second voltmeter curve over time, until the second voltmeter is in stable state;
(5) deenergization, stops heating, continues to keep logical nitrogen, for the cooling of the casing and cell piece that accelerate insulating box;
(6) electrical performance of cell crossed of test processes, and package assembling, carry out illumination under packaged assembly is placed sunlight, the quantity of illumination is 60KWh/m
2, then test suite photo attenuation situation.
7. a kind of method reducing solar cell photo attenuation according to claim 6, is characterized in that, in step (2), the temperature of setting insulating box is 70-80 DEG C, allows whole casing preheating 3-5min.
8. a kind of method reducing solar cell photo attenuation according to claim 6, is characterized in that, in step (3), the current density range leading to DC Forward Current to cell piece group is 2-20mA/cm
2, the temperature setting range that insulating box heats up is 120-150 DEG C.
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| CN201410407578.9A CN104505424B (en) | 2014-08-18 | 2014-08-18 | A kind of devices and methods therefor reducing solaode photo attenuation |
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|---|---|---|---|
| CN201410407578.9A CN104505424B (en) | 2014-08-18 | 2014-08-18 | A kind of devices and methods therefor reducing solaode photo attenuation |
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| CN104505424B CN104505424B (en) | 2016-10-05 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105140347A (en) * | 2015-09-21 | 2015-12-09 | 中节能太阳能科技（镇江）有限公司 | Mass-production apparatus capable of fast improving photoinduced degradation of a P-type crystalline silicon cell and using method thereof |
| CN105552173A (en) * | 2016-02-19 | 2016-05-04 | 常州天合光能有限公司 | Method and device for eliminating light-induced degradation of B-doped crystal silicon solar cell |
| CN105789382A (en) * | 2016-05-20 | 2016-07-20 | 浙江晶科能源有限公司 | Method for improving light degradation of boron-doped crystalline silicon solar cell |
| CN106601868A (en) * | 2016-12-05 | 2017-04-26 | 湖南红太阳光电科技有限公司 | Solar cell anti-light-decay method and anti-light-decay annealing furnace |
| CN106784134A (en) * | 2016-11-25 | 2017-05-31 | 罗雷 | A kind of device for improving crystal silicon solar battery photo attenuation |
| CN108141174A (en) * | 2016-06-21 | 2018-06-08 | 松下知识产权经营株式会社 | The method of operation of solar cell system and solar cell system |
| CN108306612A (en) * | 2017-12-20 | 2018-07-20 | 华为技术有限公司 | A kind of photovoltaic module decaying restorative procedure in photovoltaic plant and device |
| WO2018192229A1 (en) * | 2017-04-19 | 2018-10-25 | 常州时创能源科技有限公司 | Testing method for resistance of crystalline silicon solar cell to light-induced degradation |
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| EP3716472A4 (en) * | 2017-12-20 | 2020-09-30 | Huawei Technologies Co., Ltd. | Degradation recovery method and apparatus for photovoltaic module in photovoltaic power station |
| CN108306612A (en) * | 2017-12-20 | 2018-07-20 | 华为技术有限公司 | A kind of photovoltaic module decaying restorative procedure in photovoltaic plant and device |
| US11329600B2 (en) | 2017-12-20 | 2022-05-10 | Huawei Digital Power Technologies Co., Ltd. | Method and apparatus for rectifying degradation of photovoltaic module in photovoltaic power station |
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| CN108899392A (en) * | 2018-06-22 | 2018-11-27 | 江苏微导纳米装备科技有限公司 | A kind of method of the electrical pumping optimization process time of determining monocrystalline silicon battery |
| CN110634995A (en) * | 2019-09-26 | 2019-12-31 | 苏州腾晖光伏技术有限公司 | Preparation method of low-light-attenuation passivation contact solar cell |
| CN110634995B (en) * | 2019-09-26 | 2022-03-04 | 苏州腾晖光伏技术有限公司 | Preparation method of low-light-attenuation passivation contact solar cell |
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