CN105870217B - Improved diffusion technology of polycrystalline solar cell - Google Patents
Improved diffusion technology of polycrystalline solar cell Download PDFInfo
- Publication number
- CN105870217B CN105870217B CN201610330027.6A CN201610330027A CN105870217B CN 105870217 B CN105870217 B CN 105870217B CN 201610330027 A CN201610330027 A CN 201610330027A CN 105870217 B CN105870217 B CN 105870217B
- Authority
- CN
- China
- Prior art keywords
- oxygen
- nitrogen
- flow
- diffusion furnace
- big
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 91
- 238000005516 engineering process Methods 0.000 title abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 260
- 229910052757 nitrogen Inorganic materials 0.000 claims description 130
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 85
- 239000001301 oxygen Substances 0.000 claims description 85
- 229910052760 oxygen Inorganic materials 0.000 claims description 85
- 239000007789 gas Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000010792 warming Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides an improved diffusion technology of a polycrystalline solar cell, belongs to the technical field of solar cells and solves the technical problems of generally lower solar cell conversion efficiency with the adoption of a one-step diffusion method and the like in the prior art. The improved diffusion technology of the polycrystalline solar cell comprises steps as follows: A, low-temperature deposition; B, variable-temperature deposition; C, high-temperature deposition; D, warming; E, high-temperature diffusion; F, cooling. The polycrystalline solar cell prepared with the technology has the advantages of low encapsulating loss and high cell conversion ratio.
Description
Technical field
The invention belongs to technical field of solar batteries, is related to a kind of diffusion technique of improved polycrystalline solar cell.
Background technology
The production process of conventional polysilicon solar cell is mainly：Making herbs into wool, diffusion, wet etching, PE plated films, drying, printing
Back surface field, drying, printing backplane, printing positive pole, sintering and testing, sorting.Diffusing procedure directly affects opening for polycrystalline solar cell
Road voltage, its major influence factors are diffusing surface doping content, and surface dopant concentration height can cause heavy doping effect.Heavy doping
Effect can cause energy gap to shrink, and affect intrinsic carrier concentration, affect Effective Doping concentration and reduce minority carrier life time.In silicon
In crystal, because heavy doping can cause the change of band structure, formed so-called " magnetic tape trailer " at the edge of energy band.Energy gap is received
Contracting inevitably results in the loss of open-circuit voltage, ultimately results in the reduction of efficiency.Heavy doping in addition can make the Effective Doping of front surface
Concentration reduces by two orders of magnitude, therefore, the open-circuit voltage at the area surface of top is reduced, and in the microns of front surface area 0.1
In the range of, the closer to surface, Effective Doping concentration is also lower, forms a decline electric field.This species impoverishment electric field prevents few son empty
Move toward P-N boundary direction in cave.This is a kind of reason that heavy doping solar cell Zhong Ding areas surface produces " dead layer "." dead layer "
The recombination rate at place is very high, can significantly reduce the life-span of carrier.In order to obtain optimal battery performance, it is necessary to select
Appropriate diffusion top area doping content is selected, makes this concentration be unlikely to the electric field that brings about its decline.
In actual production process, the conversion efficiency using the solar cell of step diffusion method of the prior art is universal
It is low.
The content of the invention
First purpose of the present invention is there are the problems referred to above for existing technology, it is proposed that a kind of polycrystalline sun electricity
Pond, the polycrystalline solar cell have encapsulation loss it is low the characteristics of.
First purpose of the present invention can be realized by following technical proposal：A kind of polycrystalline solar cell, it include be in
The body of tabular, the side of the body is positive pole, and the opposite side of the body is negative pole, and 4 masters are evenly equipped with the positive pole
Grid and 90 thin grid, the main grid is vertically arranged with thin grid and they are electrically connected, it is characterised in that between every main grid
Spacing is 35-42 millimeters, and the width of the main grid is 0.8-1.2 millimeters, and the thin grid spacing is 1.4-2.0 millimeters, described
The width of thin grid is 0.035-0.045 millimeter.
Using above structure, using the close grid design of 4 main grids and 90 thin grid so that finished product open-circuit voltage is more than conventional
Brilliant solar cell is high, while, it is to avoid because diffused sheet resistance is lifted, caused series resistance rises, and the energy in package assembling
Reduce encapsulation loss.
Described main grid is uniformly arranged by some sections of main grid section longitudinal arrangements.
The length of each main grid section is 7-11 millimeters.
The length of the thin grid is 152-158 millimeters.
Second object of the present invention is there are the problems referred to above for existing technology, it is proposed that a kind of improved polycrystalline is too
The diffusion technique in positive electricity pond, the characteristics of the diffusion technique has polycrystalline solar cell high conversion rate.
Second object of the present invention can be realized by following technical proposal：A kind of expansion of improved polycrystalline solar cell
Day labor skill, the technique is comprised the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature keeps 6-12 at 750-790 DEG C in diffusion furnace
Minute, the mixed gas of big nitrogen, oxygen and little nitrogen, the big nitrogen and oxygen volume are passed through into diffusion furnace in the time range
Than for 16:1, the volume ratio of both the little nitrogen and big nitrogen and oxygen mixed gas is 12:100；
B, alternating temperature deposition：Temperature in diffusion furnace was promoted to into 800-820 DEG C in 6-10 minutes, in the time range
The interior mixed gas that big nitrogen, oxygen and little nitrogen are passed through into diffusion furnace, the big nitrogen is 18 with oxygen volume ratio:1, the little nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 14:100；
C, high temperature deposition：The insulation of 1-4 minutes is carried out at 825-835 DEG C, is passed through greatly into diffusion furnace during this
The mixed gas of nitrogen, oxygen and little nitrogen, the big nitrogen is 15 with oxygen volume ratio:1, both the little nitrogen and big nitrogen and oxygen are mixed
The volume ratio for closing gas is 12:100；
D, intensification：The temperature in diffusion furnace will be risen to into 845 DEG C in 8-10 minutes, led to into diffusion furnace in temperature-rise period
Enter big nitrogen；
E, high temperature knot：After stablizing when in diffusion furnace in 850 DEG C of temperature, it was passed through into diffusion furnace in 10-14 minutes
The mixed gas of big nitrogen and oxygen, the oxygen accounts for 36%-the 38% of above-mentioned mixed gas volume；
F, cooling：The temperature in diffusion furnace is down to into 770 DEG C in 12-14 minutes, is led to into diffusion furnace during this
Enter the mixed gas of big nitrogen, oxygen, the oxygen accounts for 34%-the 36% of above-mentioned mixed gas volume.
Gas flow rate constant in the diffusion furnace.
Gas in the diffusion furnace is passed through flow for 7L/min -10L/min.
The little nitrogen flow is 2L/min~2.8L/min, and the flow of the oxygen is 0.4L/min~0.8L/min, institute
The flow for stating big nitrogen is 7.2L/min~7.7L/min.
Little nitrogen flow described in step A is 2L/min, and the flow of the oxygen is 0.4L/min, the stream of the big nitrogen
Measure as 7.3L/min.
Little nitrogen flow described in step B is 2.8L/min, and the flow of the oxygen is 0.7L/min, the big nitrogen
Flow is 7.5L/min.
Little nitrogen flow described in step C is 2.5L/min, and the flow of the oxygen is 0.6L/min, the big nitrogen
Flow is 7.3L/min.
The square resistance of the body is 93-97 Ω/.
Using process above so that in the case where cost is not increased, the conversion efficiency of polycrystalline solar cell can be improved.
Compared with prior art, the present invention has advantages below：
The present invention is designed using the close grid of 4 main grids and 90 thin grid so that finished product open-circuit voltage is than the conventional polycrystalline sun
Battery is high, while, it is to avoid because diffused sheet resistance is lifted, caused series resistance rises, and can reduce envelope in package assembling
Dress loss, encapsulation loss is low；Using the diffusion technique, comparing a constant temperature deposit and spread can be in the case where cost not be increased
The polycrystalline solar cell for making production obtains high conversion efficiency, polycrystalline solar cell high conversion rate.
Description of the drawings
Fig. 1 is the planar structure schematic diagram of this polycrystalline solar cell.
The step of Fig. 2 is the diffusion technique of this improved polycrystalline solar cell schematic diagram.
In figure, 1, body；2nd, main grid；3rd, thin grid.
Specific embodiment
The following is the specific embodiment of the present invention and combine accompanying drawing, technical scheme is further described,
But the present invention is not limited to these embodiments.
Embodiment one：
As shown in figure 1, this polycrystalline solar cell, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 4 main grids 2 and 90 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 35 millimeters, the width of main grid 2 is 0.8 millimeter, and the spacing of thin grid 3 is 1.4 millimeters, thin grid 3
Width be 0.035 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 7 millis
Rice；The length of thin grid 3 is 152 millimeters.
As shown in Fig. 2 the diffusion technique of this improved polycrystalline solar cell, the technique is comprised the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 6 minutes at 750 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in time range into diffusion furnace, big nitrogen is 16 with oxygen volume ratio:1, little nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 12:100；Little nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.4L/min, the flow of big nitrogen is 7.3L/min；
B, alternating temperature deposition：Temperature in diffusion furnace was promoted to into 800 DEG C in 6 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in stove, big nitrogen is 18 with oxygen volume ratio:1, both little nitrogen and big nitrogen and oxygen
The volume ratio of mixed gas is 14:100；Little nitrogen flow is 2.8L/min in step B, and the flow of oxygen is 0.7L/min, big nitrogen
Flow be 7.5L/min；
C, high temperature deposition：The insulation of 1 minute is carried out at 825 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of little nitrogen, big nitrogen is 15 with oxygen volume ratio:1, the volume ratio of both little nitrogen and big nitrogen and oxygen mixed gas is
12:100；Little nitrogen flow is 2.5L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7.3L/min；
D, intensification：The temperature in diffusion furnace will be risen to into 845 DEG C in 8 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：After stablizing when in diffusion furnace in 850 DEG C of temperature, big nitrogen was passed through into diffusion furnace in 10 minutes
With the mixed gas of oxygen, oxygen accounts for the 36% of mixed gas volume；
F, cooling：The temperature in diffusion furnace is down to into 770 DEG C in 12 minutes, is passed through greatly into diffusion furnace during this
The mixed gas of nitrogen, oxygen, oxygen accounts for the 34% of mixed gas volume.
Gas flow rate constant in diffusion furnace；Gas in diffusion furnace is passed through flow for 7L/min -10L/min；Little nitrogen stream
Measure as 2L/min~2.8L/min, the flow of oxygen is 0.4L/min~0.8L/min, the flow of big nitrogen be 7.2L/min~
7.7L/min。
The square resistance of body is 93 Ω/.
Following table is electrical property number of the polycrystalline solar cell with conventional polycrystalline solar cell for listing the embodiment of the present invention one
According to：
The present invention adopts multi-temperature platform alternating temperature depositing high temperature knot technique, and prints the printing of the positive pole in anode process
Figure is designed using the close grid of 4 main grids and 90 thin grid so that finished product open-circuit voltage 2mv higher than conventional polycrystalline solar cell,
Simultaneously, it is to avoid because diffused sheet resistance is lifted, caused series resistance rises, its average high conversion efficiency of polycrystalline solar cell
In conventional polycrystalline solar cell, and the caused encapsulation loss due to short-wave absorption loss can be reduced in package assembling.
Embodiment two：
As shown in figure 1, this polycrystalline solar cell, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 4 main grids 2 and 90 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 42 millimeters, the width of main grid 2 is 1.2 millimeters, and the spacing of thin grid 3 is 2.0 millimeters, thin grid 3
Width be 0.045 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 11 millis
Rice；The length of thin grid 3 is 158 millimeters.
As shown in Fig. 2 the diffusion technique of this improved polycrystalline solar cell, the technique is comprised the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 12 minutes at 790 DEG C in diffusion furnace,
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in the time range into diffusion furnace, big nitrogen is 16 with oxygen volume ratio:1, it is little
The volume ratio of both nitrogen and big nitrogen and oxygen mixed gas is 12:100；In step A little nitrogen flow be 2L/min, the flow of oxygen
For 0.4L/min, the flow of big nitrogen is 7.3L/min；
B, alternating temperature deposition：Temperature in diffusion furnace was promoted to into 820 DEG C in 10 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in stove, big nitrogen is 18 with oxygen volume ratio:1, both little nitrogen and big nitrogen and oxygen
The volume ratio of mixed gas is 14:100；Little nitrogen flow is 2.8L/min in step B, and the flow of oxygen is 0.7L/min, big nitrogen
Flow be 7.5L/min；
C, high temperature deposition：The insulation of 4 minutes is carried out at 835 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of little nitrogen, big nitrogen is 15 with oxygen volume ratio:1, the volume ratio of both little nitrogen and big nitrogen and oxygen mixed gas is
12:100；Little nitrogen flow is 2.5L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7.3L/min；
D, intensification：The temperature in diffusion furnace will be risen to into 845 DEG C in 10 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：After stablizing when in diffusion furnace in 850 DEG C of temperature, big nitrogen was passed through into diffusion furnace in 14 minutes
With the mixed gas of oxygen, oxygen accounts for the 38% of mixed gas volume；
F, cooling：The temperature in diffusion furnace is down to into 770 DEG C in 14 minutes, is passed through greatly into diffusion furnace during this
The mixed gas of nitrogen, oxygen, oxygen accounts for the 36% of mixed gas volume.
Gas flow rate constant in diffusion furnace；Gas in diffusion furnace is passed through flow for 7L/min -10L/min；Little nitrogen stream
Measure as 2L/min~2.8L/min, the flow of oxygen is 0.4L/min~0.8L/min, the flow of big nitrogen be 7.2L/min~
7.7L/min。
The square resistance of body is 97 Ω/.
Following table is electrical property number of the polycrystalline solar cell with conventional polycrystalline solar cell for listing the embodiment of the present invention two
According to：
Embodiment three：
As shown in figure 1, this polycrystalline solar cell, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 4 main grids 2 and 90 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 38 millimeters, the width of main grid 2 is 1.0 millimeters, and the spacing of thin grid 3 is 1.7 millimeters, thin grid 3
Width be 0.04 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 9 millis
Rice；The length of thin grid 3 is 155 millimeters.
As shown in Fig. 2 the diffusion technique of this improved polycrystalline solar cell, the technique is comprised the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 9 minutes at 770 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in time range into diffusion furnace, big nitrogen is 16 with oxygen volume ratio:1, little nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 12:100；Little nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.4L/min, the flow of big nitrogen is 7.3L/min；
B, alternating temperature deposition：Temperature in diffusion furnace was promoted to into 810 DEG C in 8 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and little nitrogen are passed through in stove, big nitrogen is 18 with oxygen volume ratio:1, both little nitrogen and big nitrogen and oxygen
The volume ratio of mixed gas is 14:100；Little nitrogen flow is 2.8L/min in step B, and the flow of oxygen is 0.7L/min, big nitrogen
Flow be 7.5L/min；
C, high temperature deposition：The insulation of 2 minutes is carried out at 830 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of little nitrogen, big nitrogen is 15 with oxygen volume ratio:1, the volume ratio of both little nitrogen and big nitrogen and oxygen mixed gas is
12:100；Little nitrogen flow is 2.5L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7.3L/min；
D, intensification：The temperature in diffusion furnace will be risen to into 845 DEG C in 9 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：After stablizing when in diffusion furnace in 850 DEG C of temperature, big nitrogen was passed through into diffusion furnace in 12 minutes
With the mixed gas of oxygen, oxygen accounts for the 37% of mixed gas volume；
F, cooling：The temperature in diffusion furnace is down to into 770 DEG C in 13 minutes, is passed through greatly into diffusion furnace during this
The mixed gas of nitrogen, oxygen, oxygen accounts for the 35% of mixed gas volume.
Gas flow rate constant in diffusion furnace；Gas in diffusion furnace is passed through flow for 7L/min -10L/min；Little nitrogen stream
Measure as 2L/min~2.8L/min, the flow of oxygen is 0.4L/min~0.8L/min, the flow of big nitrogen be 7.2L/min~
7.7L/min。
The square resistance of body is 95 Ω/.
Following table is electrical property number of the polycrystalline solar cell with conventional polycrystalline solar cell for listing the embodiment of the present invention three
According to：
Drawn by above example, the inventive method makes the square resistance of silicon chip control to match 4 masters in 93-97 Ω/
Grid and 90 thin grid positive pole half tones, comparing constant temperature deposit and spread can make the polycrystalline of production in the case where cost is not increased
Solar cell obtains high conversion efficiency.
Specific embodiment described herein is only explanation for example spiritual to the present invention.Technology neck belonging to of the invention
The technical staff in domain can be made various modifications to described specific embodiment or supplement or replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (4)
1. the diffusion technique of improved polycrystalline solar cell, the technique is comprised the following steps：A, low temperature depositing：Body is inserted general
In logical diffusion furnace, temperature is kept for 12 minutes at 790 DEG C in diffusion furnace, and big nitrogen, oxygen were passed through into diffusion furnace in 12 minutes
With the mixed gas of little nitrogen, big nitrogen is 16 with oxygen volume ratio:1, the volume of little nitrogen：The body of both big nitrogen and oxygen mixed gas
Product=12:100；Little nitrogen flow is 2L/min in step A, and the flow of oxygen is 0.4L/min, and the flow of big nitrogen is 7.3L/min；
B, alternating temperature deposition：Temperature in diffusion furnace was promoted to into 820 DEG C in 10 minutes, was passed through into diffusion furnace in 10 minutes
The mixed gas of big nitrogen, oxygen and little nitrogen, big nitrogen is 18 with oxygen volume ratio:1, the volume of little nitrogen：Big nitrogen is mixed with both oxygen
Close volume=14 of gas:100；Little nitrogen flow is 2.8L/min in step B, and the flow of oxygen is 0.7L/min, the stream of big nitrogen
Measure as 7.5L/min；
C, high temperature deposition：The insulation of 4 minutes is carried out at 835 DEG C, big nitrogen, oxygen and little nitrogen are passed through into diffusion furnace during this
Mixed gas, big nitrogen and oxygen volume ratio are 15:1, the volume of the little nitrogen：The volume of both big nitrogen and oxygen mixed gas
Than=12:100；Little nitrogen flow is 2.5L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7.3L/
min；
D, intensification：The temperature in diffusion furnace will be risen to into 845 DEG C in 10 minutes, big nitrogen is passed through into diffusion furnace in temperature-rise period；
E, high temperature knot：After stablizing when in diffusion furnace in 850 DEG C of temperature, big nitrogen and oxygen were passed through into diffusion furnace in 14 minutes
The mixed gas of gas, oxygen accounts for the 38% of mixed gas volume；
F, cooling：The temperature in diffusion furnace is down to into 770 DEG C in 14 minutes, be passed through into diffusion furnace during this big nitrogen,
The mixed gas of oxygen, oxygen accounts for the 36% of mixed gas volume.
2. the diffusion technique of improved polycrystalline solar cell according to claim 1, it is characterised in that in the diffusion furnace
Gas flow rate constant.
3. the diffusion technique of improved polycrystalline solar cell according to claim 2, it is characterised in that in the diffusion furnace
Gas be passed through flow for 7L/min -10L/min.
4. the diffusion technique of improved polycrystalline solar cell according to claim 3, it is characterised in that the little nitrogen flow
For 2L/min~2.8L/min, the flow of the oxygen is 0.4L/min~0.8L/min, and the flow of the big nitrogen is 7.2L/
Min~7.7L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610330027.6A CN105870217B (en) | 2015-01-12 | 2015-01-12 | Improved diffusion technology of polycrystalline solar cell |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510014909.7A CN104538467B (en) | 2015-01-12 | 2015-01-12 | A kind of polycrystalline solar cell and diffusion technique thereof |
| CN201610330027.6A CN105870217B (en) | 2015-01-12 | 2015-01-12 | Improved diffusion technology of polycrystalline solar cell |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014909.7A Division CN104538467B (en) | 2015-01-12 | 2015-01-12 | A kind of polycrystalline solar cell and diffusion technique thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105870217A CN105870217A (en) | 2016-08-17 |
| CN105870217B true CN105870217B (en) | 2017-05-17 |
Family
ID=52853966
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014909.7A Active CN104538467B (en) | 2015-01-12 | 2015-01-12 | A kind of polycrystalline solar cell and diffusion technique thereof |
| CN201610330027.6A Active CN105870217B (en) | 2015-01-12 | 2015-01-12 | Improved diffusion technology of polycrystalline solar cell |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014909.7A Active CN104538467B (en) | 2015-01-12 | 2015-01-12 | A kind of polycrystalline solar cell and diffusion technique thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN104538467B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098805A (en) * | 2016-06-16 | 2016-11-09 | 浙江光隆能源科技股份有限公司 | A kind of four main grid polycrystalline solar cell and diffusion techniques thereof |
| CN106206267A (en) * | 2016-07-26 | 2016-12-07 | 润峰电力有限公司 | A kind of crystal silicon chip method for diffusing high sheet resistance |
| CN110137307B (en) * | 2019-05-13 | 2021-10-22 | 浙江贝盛光伏股份有限公司 | High-uniformity shallow junction diffusion process in low-pressure environment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263153A (en) * | 2010-05-27 | 2011-11-30 | 宁波百事德太阳能科技有限公司 | Improved diffusion method of solar cells |
| CN102383198A (en) * | 2011-10-12 | 2012-03-21 | 润峰电力有限公司 | Three-step variable-temperature diffusion process for silicon cell |
| CN102509703A (en) * | 2012-01-06 | 2012-06-20 | 浙江金贝能源科技有限公司 | Diffusing method for solar panels |
| CN103618023A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | High sheet resistance diffusion process |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5351100B2 (en) * | 2010-07-02 | 2013-11-27 | 株式会社ノリタケカンパニーリミテド | Conductive paste composition for solar cell |
| CN202231019U (en) * | 2011-09-14 | 2012-05-23 | 江阴鑫辉太阳能有限公司 | Tri-gate electrode of solar cell |
| CN102610668A (en) * | 2012-03-15 | 2012-07-25 | 晶澳（扬州）太阳能科技有限公司 | Improved electrode structure of solar cell |
-
2015
- 2015-01-12 CN CN201510014909.7A patent/CN104538467B/en active Active
- 2015-01-12 CN CN201610330027.6A patent/CN105870217B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263153A (en) * | 2010-05-27 | 2011-11-30 | 宁波百事德太阳能科技有限公司 | Improved diffusion method of solar cells |
| CN102383198A (en) * | 2011-10-12 | 2012-03-21 | 润峰电力有限公司 | Three-step variable-temperature diffusion process for silicon cell |
| CN102509703A (en) * | 2012-01-06 | 2012-06-20 | 浙江金贝能源科技有限公司 | Diffusing method for solar panels |
| CN103618023A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | High sheet resistance diffusion process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105870217A (en) | 2016-08-17 |
| CN104538467B (en) | 2016-08-24 |
| CN104538467A (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102820383B (en) | Spread method of polycrystalline silicon solar cell | |
| CN102766908B (en) | The Boron diffusion method of crystal silicon solar energy battery | |
| CN106057980B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN104505424B (en) | A kind of devices and methods therefor reducing solaode photo attenuation | |
| CN105895738A (en) | Passivated contact N-type solar cell, preparation method, assembly and system | |
| CN106711239A (en) | Preparation method of PERC solar battery and PERC solar battery | |
| CN104716232B (en) | A kind of solaode emitter stage dopant profiles method | |
| CN102810599B (en) | Phosphorous diffusion method of polycrystalline silicon solar cell | |
| CN105870217B (en) | Improved diffusion technology of polycrystalline solar cell | |
| CN207529942U (en) | A kind of solar energy hetero-junction solar cell | |
| CN105280484A (en) | Diffusion technique of crystal-silicon efficient high-sheet-resistance battery piece | |
| CN103050581A (en) | Diffusion technology for laser doping selectivity emitter junction | |
| CN107293617A (en) | A kind of high-efficiency low-cost solar battery diffusion technology | |
| CN204966525U (en) | Improve volume production device of photic decay of P type crystal silicon battery fast | |
| CN105957904B (en) | The diffusion technique of improved solar battery sheet | |
| CN103094417B (en) | The method for manufacturing solar battery of the emitter structure of low high low doping concentration | |
| CN106340567B (en) | A kind of Liang Bu TongYuans technique that pressure is opened applied to solar cell lifting | |
| CN102758256B (en) | Phosphorus diffusion method for crystal silicon wafer | |
| CN204668282U (en) | A kind of high-temperature low-pressure disperser | |
| CN103199152A (en) | Phosphorus diffusion method of crystal silicon slice | |
| CN107785458A (en) | It is a kind of to realize the deep crystalline silicon diffusion technique for tying low surface concentration | |
| CN102376783A (en) | Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof | |
| CN104752564A (en) | Novel diffusion process capable of increasing polysilicon open-circuit voltage | |
| CN105762066B (en) | The diffusion technique of polycrystalline solar cell | |
| CN106098805A (en) | A kind of four main grid polycrystalline solar cell and diffusion techniques thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |