CN105957904B - The diffusion technique of improved solar battery sheet - Google Patents
The diffusion technique of improved solar battery sheet Download PDFInfo
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- CN105957904B CN105957904B CN201610322851.7A CN201610322851A CN105957904B CN 105957904 B CN105957904 B CN 105957904B CN 201610322851 A CN201610322851 A CN 201610322851A CN 105957904 B CN105957904 B CN 105957904B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 256
- 229910052757 nitrogen Inorganic materials 0.000 claims description 128
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 84
- 239000001301 oxygen Substances 0.000 claims description 84
- 229910052760 oxygen Inorganic materials 0.000 claims description 84
- 239000007789 gas Substances 0.000 claims description 61
- 238000009413 insulation Methods 0.000 claims description 5
- 230000006641 stabilisation Effects 0.000 claims description 5
- 238000011105 stabilization Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of diffusion technique of improved solar battery sheet, belong to technical field of solar batteries.It solves the universal technical problem such as relatively low of conversion efficiency of the solar cell of step diffusion method of the prior art.The diffusion technique of this improved solar battery sheet, the technique comprise the following steps：A, low temperature depositing；B, alternating temperature deposits；C, high temperature deposition；D, heat up；E, high temperature knot；F, cool down.The solar battery sheet made using this diffusion technique has the advantages of low encapsulation loss, solar battery sheet high conversion rate.
Description
The present invention is to belong to application number：201510014375.8 applying date 2015-01-12 patent name：A kind of solar energy
The divisional application of the patent of invention of cell piece and its diffusion technique.
Technical field
The invention belongs to technical field of solar batteries, is related to a kind of diffusion technique of improved solar battery sheet.
Background technology
The production process of conventional polysilicon solar cell is mainly：Making herbs into wool, diffusion, wet etching, PE plated films, drying, printing
Back surface field, drying, printing backplane, printing positive pole, sintering and testing, sorting.Diffusing procedure directly affects opening for polycrystalline solar cell
Road voltage, its major influence factors are diffusing surface doping concentration, and surface dopant concentration height can cause heavy doping effect.Heavy doping
Effect can cause energy gap to be shunk, and influence intrinsic carrier concentration, influence Effective Doping concentration and reduce minority carrier life time.In silicon
In crystal, because heavy doping can cause the change of band structure, formed so-called " magnetic tape trailer " at the edge of energy band.Energy gap is received
Contracting inevitably results in the loss of open-circuit voltage, ultimately results in the reduction of efficiency.Other heavy doping can make the Effective Doping on preceding surface
Concentration reduces by two orders of magnitude, therefore, reduces the open-circuit voltage at the area surface of top, and in the microns of front surface area 0.1
In the range of, closer to surface, Effective Doping concentration is also lower, forms a decline electric field.This species impoverishment electric field prevents few son empty
Moved toward P-N boundary direction in cave.This is a kind of reason that heavy doping solar cell Zhong Ding areas surface produces " dead layer "." dead layer "
The recombination rate at place is very high, can significantly reduce the life-span of carrier.In order to obtain optimal battery performance, it is necessary to select
Appropriate diffusion top area doping concentration is selected, this concentration is unlikely to the electric field that brings about its decline.
In actual production process, the conversion efficiency using the solar cell of step diffusion method of the prior art is universal
It is relatively low.
The content of the invention
First purpose of the present invention is above mentioned problem be present for existing technology, it is proposed that a kind of solar cell
Piece, the solar battery sheet have the characteristics of encapsulation loss is low.
First purpose of the present invention can be realized by following technical proposal：A kind of solar battery sheet, it is including being in
The body of tabular, the side of the body is positive pole, and the opposite side of the body is negative pole, and 3 masters are evenly equipped with the positive pole
Grid and 96 thin grid, the main grid is vertically arranged with thin grid and they are electrically connected, it is characterised in that between every main grid
Spacing is 50-55 millimeters, and the width of the main grid is 1.2-1.5 millimeters, and the thin grid spacing is 1.2-1.8 millimeters, described
The width of thin grid is 0.03-0.04 millimeter.
Using above structure, designed using the close grid of 3 main grids and 96 thin grid so that finished product open-circuit voltage is than routine too
Positive energy cell piece is high, meanwhile, avoid the series resistance caused by diffused sheet resistance is lifted and rise, and the energy in package assembling
Reduce encapsulation loss.
Described main grid is uniformly arranged by some sections of main grid section longitudinal arrangements.
The length of each main grid section is 8-10 millimeters.
The length of the thin grid is 150-160 millimeters.
Second object of the present invention is above mentioned problem be present for existing technology, it is proposed that a kind of improved solar energy
The diffusion technique of cell piece, the diffusion technique have the characteristics of solar battery sheet high conversion rate.
Second object of the present invention can be realized by following technical proposal：A kind of expansion of improved solar battery sheet
Day labor skill, the technique comprise the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature keeps 5-10 at 760-800 DEG C in diffusion furnace
Minute, the mixed gas of big nitrogen, oxygen and small nitrogen, the big nitrogen and oxygen volume are passed through into diffusion furnace in the time range
Than for 15:1, the volume ratio of small nitrogen and both big nitrogen and the oxygen mixed gas is 10:100；
B, alternating temperature deposits：Temperature in diffusion furnace was promoted to 815-825 DEG C in 6-9 minutes, in the time range
The interior mixed gas that big nitrogen, oxygen and small nitrogen are passed through into diffusion furnace, the big nitrogen are 15 with oxygen volume ratio:1, the small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 12:100；
C, high temperature deposition：The insulation of 2-5 minutes is carried out at 815-825 DEG C, is passed through into diffusion furnace during this big
The mixed gas of nitrogen, oxygen and small nitrogen, the big nitrogen are 15 with oxygen volume ratio:1, the small nitrogen and both big nitrogen and oxygen are mixed
The volume ratio for closing gas is 11:100；
D, heat up：The temperature in diffusion furnace will be risen to 835 DEG C in 10-12 minutes, led in temperature-rise period into diffusion furnace
Enter big nitrogen；
E, high temperature knot：When in diffusion furnace in 835 DEG C of temperature after stabilization, it was passed through in 10-12 minutes into diffusion furnace
The mixed gas of big nitrogen and oxygen, the oxygen account for 32%-the 36% of above-mentioned mixed gas volume；
F, cool down：The temperature in diffusion furnace is down to 790 DEG C in 10-15 minutes, led into diffusion furnace during this
Enter the mixed gas of big nitrogen, oxygen, the oxygen accounts for 32%-the 36% of above-mentioned mixed gas volume.
Gas flow rate constant in the diffusion furnace.
It is 8L/min -11L/min that gas in the diffusion furnace, which is passed through flow,.
The small nitrogen flow is 2L/min~2.5L/min, and the flow of the oxygen is 0.5L/min~0.8L/min, institute
The flow for stating big nitrogen is 7L/min~7.7L/minL/min.
Small nitrogen flow described in the step A is 2L/min, and the flow of the oxygen is 0.6L/min, the stream of the big nitrogen
Measure as 7L/min.
Small nitrogen flow described in the step B is 2.5L/min, and the flow of the oxygen is 0.6L/min, the big nitrogen
Flow is 7L/min.
Small nitrogen flow described in the step C is 2.2L/min, and the flow of the oxygen is 0.6L/min, the big nitrogen
Flow is 7L/min.
The square resistance of the body is 92-98 Ω/.
Using process above so that in the case where not increasing cost, the conversion efficiency of solar battery sheet can be improved.
Compared with prior art, the present invention has advantages below：
The present invention is using the design of the close grid of 3 main grids and 96 thin grid so that finished product open-circuit voltage is than conventional solar-electricity
Pond piece is high, meanwhile, avoid the series resistance caused by diffused sheet resistance is lifted and rise, and envelope can be reduced in package assembling
Dress loss, encapsulation loss are low；Using the diffusion technique, compared to one time constant temperature deposit and spread can be in the case where not increasing cost
The solar battery sheet of production is set to obtain high conversion efficiency, solar battery sheet high conversion rate.
Brief description of the drawings
Fig. 1 is the planar structure schematic diagram of this solar battery sheet.
Fig. 2 is the step schematic diagram of the diffusion technique of this improved solar battery sheet.
In figure, 1, body；2nd, main grid；3rd, thin grid.
Embodiment
It is the specific embodiment of the present invention and with reference to accompanying drawing below, technical scheme is further described,
But the present invention is not limited to these embodiments.
Embodiment one：
As shown in figure 1, this solar battery sheet, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 3 main grids 2 and 96 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 50 millimeters, and the width of main grid 2 is 1.2 millimeters, and the thin spacing of grid 3 is 1.2 millimeters, thin grid 3
Width be 0.03 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 8 millis
Rice；The length of thin grid 3 is 150 millimeters.
As shown in Fig. 2 the diffusion technique of this improved solar battery sheet, the technique comprise the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 5 minutes at 760 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in time range into diffusion furnace, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.6L/min, the flow of big nitrogen is 7L/min；
B, alternating temperature deposits：Temperature in diffusion furnace was promoted to 815 DEG C in 6 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in stove, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition：Carry out the insulation of 2 minutes at 815 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen are 15 with oxygen volume ratio:1, the volume ratio of both small nitrogen and big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, heat up：The temperature in diffusion furnace will be risen to 835 DEG C in 10 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：When in diffusion furnace in 835 DEG C of temperature after stabilization, big nitrogen was passed through into diffusion furnace in 10 minutes
With the mixed gas of oxygen, oxygen accounts for the 32% of mixed gas volume；
F, cool down：The temperature in diffusion furnace is down to 790 DEG C in 10 minutes, is passed through into diffusion furnace during this big
The mixed gas of nitrogen, oxygen, oxygen account for the 32% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Measure as 2L/min~2.5L/min, the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of body is 92 Ω/.
Following table is to list electrical property number of the solar battery sheet with conventional solar battery sheet of the embodiment of the present invention one
According to：
The present invention uses multi-temperature platform alternating temperature depositing high temperature knot technique, and prints the printing of the positive pole in anode process
Figure is using the design of the close grid of 3 main grids and 96 thin grid so that and finished product open-circuit voltage is higher 2mv than conventional solar battery sheet,
Meanwhile avoid the series resistance caused by diffused sheet resistance is lifted and rise, the average high conversion efficiency of its solar battery sheet
In conventional solar battery sheet, and it can be reduced in package assembling and encapsulate loss caused by short-wave absorption loses.
Embodiment two：
As shown in figure 1, this solar battery sheet, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 3 main grids 2 and 96 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 55 millimeters, and the width of main grid 2 is 1.5 millimeters, and the thin spacing of grid 3 is 1.8 millimeters, thin grid 3
Width be 0.04 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 10 millis
Rice；The length of thin grid 3 is 160 millimeters.
As shown in Fig. 2 the diffusion technique of this improved solar battery sheet, the technique comprise the following steps：
A, low temperature depositing：Body to be inserted in common diffusion furnace, temperature is kept for 10 minutes at 800 DEG C in diffusion furnace,
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in the time range into diffusion furnace, big nitrogen is 15 with oxygen volume ratio:1, it is small
The volume ratio of nitrogen and both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, the flow of oxygen
For 0.6L/min, the flow of big nitrogen is 7L/min；
B, alternating temperature deposits：Temperature in diffusion furnace was promoted to 825 DEG C in 9 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in stove, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition：Carry out the insulation of 5 minutes at 825 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen are 15 with oxygen volume ratio:1, the volume ratio of both small nitrogen and big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, heat up：The temperature in diffusion furnace will be risen to 835 DEG C in 12 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：When in diffusion furnace in 835 DEG C of temperature after stabilization, big nitrogen was passed through into diffusion furnace in 12 minutes
With the mixed gas of oxygen, oxygen accounts for the 36% of mixed gas volume；
F, cool down：The temperature in diffusion furnace is down to 790 DEG C in 15 minutes, is passed through into diffusion furnace during this big
The mixed gas of nitrogen, oxygen, oxygen account for the 36% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Measure as 2L/min~2.5L/min, the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of body is 98 Ω/.
Following table is to list electrical property number of the solar battery sheet with conventional solar battery sheet of the embodiment of the present invention two
According to：
Embodiment three：
As shown in figure 1, this solar battery sheet, it includes plate-like body 1, and the side of body 1 is positive pole, body 1
Opposite side be negative pole, 3 main grids 2 and 96 thin grid 3 are evenly equipped with positive pole, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
Connect, the spacing between every main grid 2 is 50-52 millimeters, and the width of main grid 2 is 1.3 millimeters, and the thin spacing of grid 3 is 1.5 millimeters, carefully
The width of grid 3 is 0.035 millimeter.
As shown in figure 1, main grid 2 is uniformly arranged by some sections of main grid section longitudinal arrangements；The length of each main grid section is 9 millis
Rice；The length of thin grid 3 is 155 millimeters.
As shown in Fig. 2 the diffusion technique of this improved solar battery sheet, the technique comprise the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 7 minutes at 780 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in time range into diffusion furnace, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.6L/min, the flow of big nitrogen is 7L/min；
B, alternating temperature deposits：Temperature in diffusion furnace was promoted to 820 DEG C in 7 minutes, to diffusion in the time range
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in stove, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition：Carry out the insulation of 3 minutes at 820 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen are 15 with oxygen volume ratio:1, the volume ratio of both small nitrogen and big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, heat up：The temperature in diffusion furnace will be risen to 835 DEG C in 11 minutes, be passed through greatly into diffusion furnace in temperature-rise period
Nitrogen；
E, high temperature knot：When in diffusion furnace in 835 DEG C of temperature after stabilization, big nitrogen was passed through into diffusion furnace in 11 minutes
With the mixed gas of oxygen, oxygen accounts for the 34% of mixed gas volume；
F, cool down：The temperature in diffusion furnace is down to 790 DEG C in 12 minutes, is passed through into diffusion furnace during this big
The mixed gas of nitrogen, oxygen, oxygen account for the 34% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Measure as 2L/min~2.5L/min, the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of body is 95 Ω/.
Following table is to list electrical property number of the solar battery sheet with conventional solar battery sheet of the embodiment of the present invention three
According to：
Drawn by above example, the inventive method makes the square resistance of silicon chip control in 92-98 Ω/ 3 masters of matching
Grid and 96 thin grid positive pole half tone, compared to one time constant temperature deposit and spread can make the sun of production in the case where not increasing cost
Can the high conversion efficiency of cell piece acquisition.
Specific embodiment described herein is only to spirit explanation for example of the invention.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (3)
1. the diffusion technique of improved solar battery sheet, the technique comprises the following steps：
A, low temperature depositing：Body is inserted in common diffusion furnace, temperature is kept for 10 minutes at 800 DEG C in diffusion furnace, at this
Between the mixed gas of big nitrogen, oxygen and small nitrogen is passed through in scope into diffusion furnace, big nitrogen is 15 with oxygen volume ratio:1, small nitrogen and
The volume ratio of big both nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.6L/min, the flow of big nitrogen is 7L/min；
B, alternating temperature deposits：Temperature in diffusion furnace was promoted to 825 DEG C in 9 minutes, in the time range into diffusion furnace
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through, big nitrogen is 15 with oxygen volume ratio:1, both small nitrogen and big nitrogen and oxygen mix
The volume ratio of gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, the stream of big nitrogen
Measure as 7L/min；
C, high temperature deposition：The insulation of 5 minutes is carried out at 825 DEG C, big nitrogen, oxygen and small nitrogen are passed through into diffusion furnace during this
Mixed gas, big nitrogen and oxygen volume ratio are 15:1, the volume ratio of small nitrogen and both big nitrogen and oxygen mixed gas is 11:
100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, heat up：The temperature in diffusion furnace will be risen to 835 DEG C in 12 minutes, be passed through big nitrogen in temperature-rise period into diffusion furnace；
E, high temperature knot：When in diffusion furnace in 835 DEG C of temperature after stabilization, big nitrogen and oxygen were passed through into diffusion furnace in 12 minutes
The mixed gas of gas, oxygen account for the 36% of mixed gas volume；
F, cool down：The temperature in diffusion furnace is down to 790 DEG C in 15 minutes, be passed through into diffusion furnace during this big nitrogen,
The mixed gas of oxygen, oxygen account for the 36% of mixed gas volume.
2. the diffusion technique of improved solar battery sheet according to claim 1, it is characterised in that in the diffusion furnace
Gas flow rate constant.
3. the diffusion technique of improved solar battery sheet according to claim 2, it is characterised in that in the diffusion furnace
Gas to be passed through flow be 8L/min -11L/min.
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