CN106024599B - The diffusion technique of solar battery sheet - Google Patents
The diffusion technique of solar battery sheet Download PDFInfo
- Publication number
- CN106024599B CN106024599B CN201610318096.5A CN201610318096A CN106024599B CN 106024599 B CN106024599 B CN 106024599B CN 201610318096 A CN201610318096 A CN 201610318096A CN 106024599 B CN106024599 B CN 106024599B
- Authority
- CN
- China
- Prior art keywords
- nitrogen
- oxygen
- big
- flow
- diffusion furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 260
- 229910052757 nitrogen Inorganic materials 0.000 claims description 130
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 85
- 239000001301 oxygen Substances 0.000 claims description 85
- 229910052760 oxygen Inorganic materials 0.000 claims description 85
- 239000007789 gas Substances 0.000 claims description 59
- 238000004321 preservation Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of diffusion techniques of solar battery sheet, belong to technical field of solar batteries.It solves the universal technical problems such as relatively low of transfer efficiency of the solar battery of step diffusion method in the prior art.The diffusion technique of this solar battery sheet, the technique is the following steps are included: A, low temperature depositing；B, alternating temperature deposits；C, high temperature deposition；D, it heats up；E, high temperature knot；F, cooling.Have the advantages that low, solar battery sheet high conversion rate is lost in encapsulation using the solar battery sheet that this diffusion technique is made.
Description
The present invention is to belong to application number: 201510014375.8, a kind of applying date 2015-01-12 patent name: solar energy
The divisional application of the patent of invention of cell piece and its diffusion technique.
Technical field
The invention belongs to technical field of solar batteries, are related to a kind of diffusion technique of solar battery sheet.
Background technique
The production process of conventional polysilicon solar cell is main are as follows: making herbs into wool, diffusion, wet etching, PE plated film, drying, printing
Back surface field, drying, printing backplane, printing anode, sintering and testing, sorting.Diffusing procedure directly affects opening for polycrystalline solar cell
Road voltage, major influence factors are diffusing surface doping concentration, and surface dopant concentration height can cause heavy doping effect.Heavy doping
Effect can cause forbidden bandwidth to be shunk, and influence intrinsic carrier concentration, influence Effective Doping concentration and reduce minority carrier life time.In silicon
In crystal, since heavy doping can cause the variation of band structure, so-called " magnetic tape trailer " is formed at the edge of energy band.Forbidden bandwidth is received
Contracting inevitably results in the loss of open-circuit voltage, eventually leads to the reduction of efficiency.In addition heavy doping can make the Effective Doping of front surface
Concentration reduces by two orders of magnitude, therefore, reduces the open-circuit voltage at the area surface of top, and in 0.1 microns of front surface area
In range, closer to surface, Effective Doping concentration is also lower, forms a decline electric field.This species impoverishment electric field prevents few son empty
Cave is mobile toward P-N boundary direction.This is a kind of reason that the heavy doping area solar cell Zhong Ding surface generates " dead layer "." dead layer "
The recombination rate at place is very high, can significantly reduce the service life of carrier.In order to obtain optimal battery performance, it is necessary to select
Diffusion top appropriate area's doping concentration is selected, this concentration is made to be unlikely to the electric field that brings about its decline.
In the actual production process, the transfer efficiency using the solar battery of step diffusion method in the prior art is universal
It is relatively low.
Summary of the invention
The first purpose of this invention is the presence of the above problem in view of the prior art, proposes a kind of solar battery
Piece, the solar battery sheet have the characteristics that encapsulation loss is low.
The first purpose of this invention can be realized by the following technical scheme: a kind of solar battery sheet, it includes being in
The ontology of plate, the side of the ontology are anode, and the other side of the ontology is cathode, are evenly equipped with 3 masters on the anode
Grid and 96 thin grid, the main grid is vertically arranged with thin grid and they are electrically connected, which is characterized in that between every main grid
Spacing is 50-55 millimeters, and the width of the main grid is 1.2-1.5 millimeters, and the thin grid spacing is 1.2-1.8 millimeters, described
The width of thin grid is 0.03-0.04 millimeter.
Using the above structure, it is designed using the close grid of 3 main grids and 96 thin grid, so that finished product open-circuit voltage is too than routine
Positive energy cell piece is high, meanwhile, it avoids series resistance caused by being promoted due to diffused sheet resistance and rises, and the energy in package assembling
Reduce encapsulation loss.
The main grid is uniformly arranged by several segments main grid section longitudinal arrangement.
The length of each main grid section is 8-10 millimeters.
The length of the thin grid is 150-160 millimeters.
Second object of the present invention is the presence of the above problem in view of the prior art, proposes a kind of solar battery sheet
Diffusion technique, which has the characteristics that solar battery sheet high conversion rate.
Second object of the present invention can be realized by the following technical scheme: a kind of diffusion work of solar battery sheet
Skill, the technique the following steps are included:
A, low temperature depositing: ontology being placed in common diffusion furnace, and temperature keeps 5-10 at 760-800 DEG C in diffusion furnace
Minute, the mixed gas of big nitrogen, oxygen and small nitrogen, the big nitrogen and oxygen volume are passed through into diffusion furnace within this time range
Than for 15:1, the volume ratio of the small nitrogen and both big nitrogen and oxygen mixed gas is 10:100；
B, alternating temperature deposits: the temperature in diffusion furnace being promoted to 815-825 DEG C in 6-9 minutes, in the time range
The interior mixed gas that big nitrogen, oxygen and small nitrogen are passed through into diffusion furnace, the big nitrogen and oxygen volume ratio are 15:1, the small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 12:100；
C, high temperature deposition: carrying out heat preservation in 2-5 minutes at 815-825 DEG C, this is passed through into diffusion furnace big in the process
The mixed gas of nitrogen, oxygen and small nitrogen, the big nitrogen and oxygen volume ratio are 15:1, and the small nitrogen and both big nitrogen and oxygen are mixed
The volume ratio for closing gas is 11:100；
D, it heats up: the temperature in diffusion furnace will be risen to 835 DEG C in 10-12 minutes, led in temperature-rise period into diffusion furnace
Enter big nitrogen；
E, it high temperature knot: after stablizing after in diffusion furnace in 835 DEG C of temperature when, is passed through in 10-12 minutes into diffusion furnace
The mixed gas of big nitrogen and oxygen, the oxygen account for 32%-the 36% of above-mentioned mixed gas volume；
F, cooling: being down to 790 DEG C for the temperature in diffusion furnace in 10-15 minutes, this leads into diffusion furnace in the process
Enter the mixed gas of big nitrogen, oxygen, the oxygen accounts for 32%-the 36% of above-mentioned mixed gas volume.
Gas flow rate constant in the diffusion furnace.
It is 8L/min -11L/min that gas in the diffusion furnace, which is passed through flow,.
The small nitrogen flow is 2L/min~2.5L/min, and the flow of the oxygen is 0.5L/min~0.8L/min, institute
The flow for stating big nitrogen is 7L/min~7.7L/minL/min.
Small nitrogen flow described in the step A is 2L/min, and the flow of the oxygen is 0.6L/min, the stream of the big nitrogen
Amount is 7L/min.
Small nitrogen flow described in the step B is 2.5L/min, and the flow of the oxygen is 0.6L/min, the big nitrogen
Flow is 7L/min.
Small nitrogen flow described in the step C is 2.2L/min, and the flow of the oxygen is 0.6L/min, the big nitrogen
Flow is 7L/min.
The square resistance of the ontology is 92-98 Ω/.
Process above is used, so that the transfer efficiency of solar battery sheet can be improved in the case where not increasing cost.
Compared with prior art, the invention has the following advantages that
The present invention is using the design of the close grid of 3 main grids and 96 thin grid, so that finished product open-circuit voltage is than conventional solar-electricity
Pond piece is high, meanwhile, it avoids series resistance caused by being promoted due to diffused sheet resistance and rises, and envelope can be reduced in package assembling
Dress loss, encapsulation loss are low；Using the diffusion technique, compared to one time constant temperature deposit and spread can be in the case where not increasing cost
The solar battery sheet of production is set to obtain high transfer efficiency, solar battery sheet high conversion rate.
Detailed description of the invention
Fig. 1 is the planar structure schematic diagram of this solar battery sheet.
Fig. 2 is the step schematic diagram of the diffusion technique of this solar battery sheet.
In figure, 1, ontology；2, main grid；3, thin grid.
Specific embodiment
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described,
However, the present invention is not limited to these examples.
Embodiment one:
As shown in Figure 1, this solar battery sheet, it includes plate-like ontology 1, and the side of ontology 1 is anode, ontology 1
The other side be cathode, the thin grid 3 of 3 main grids 2 and 96 are evenly equipped on anode, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
It connects, the spacing between every main grid 2 is 50 millimeters, and the width of main grid 2 is 1.2 millimeters, and thin 3 spacing of grid is 1.2 millimeters, thin grid 3
Width be 0.03 millimeter.
As shown in Figure 1, main grid 2 is uniformly arranged by several segments main grid section longitudinal arrangement；The length of each main grid section is 8 millis
Rice；The length of thin grid 3 is 150 millimeters.
As shown in Fig. 2, the diffusion technique of this solar battery sheet, the technique the following steps are included:
A, low temperature depositing: ontology being placed in common diffusion furnace, and temperature is kept for 5 minutes at 760 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in time range into diffusion furnace, big nitrogen and oxygen volume ratio are 15:1, small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.6L/min, the flow of big nitrogen are 7L/min；
B, alternating temperature deposits: the temperature in diffusion furnace being promoted to 815 DEG C in 6 minutes, within this time range to diffusion
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in furnace, big nitrogen and oxygen volume ratio are 15:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition: carrying out heat preservation in 2 minutes at 815 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen and oxygen volume ratio are 15:1, and the volume ratio of small nitrogen and both big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, it heats up: the temperature in diffusion furnace will be risen to 835 DEG C in 10 minutes, be passed through in temperature-rise period into diffusion furnace big
Nitrogen；
E, after stablizing after in diffusion furnace in 835 DEG C of temperature when, big nitrogen high temperature knot: is passed through into diffusion furnace in 10 minutes
With the mixed gas of oxygen, oxygen accounts for the 32% of mixed gas volume；
F, cooling: being down to 790 DEG C for the temperature in diffusion furnace in 10 minutes, this is passed through into diffusion furnace big in the process
The mixed gas of nitrogen, oxygen, oxygen account for the 32% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Amount is 2L/min~2.5L/min, and the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of ontology is 92 Ω/.
Following table is the electrical property number for listing the solar battery sheet and conventional solar battery sheet of the embodiment of the present invention one
According to:
The present invention uses multi-temperature platform alternating temperature depositing high temperature knot technique, and prints the anode printing in anode process
Figure is using the design of the close grid of 3 main grids and 96 thin grid, so that finished product open-circuit voltage is 2mv higher than conventional solar battery sheet,
Meanwhile avoid promoted due to diffused sheet resistance caused by series resistance rise, solar battery sheet is averaged high conversion efficiency
Loss is encapsulated in conventional solar battery sheet, and caused by capable of reducing in package assembling due to short-wave absorption loss.
Embodiment two:
As shown in Figure 1, this solar battery sheet, it includes plate-like ontology 1, and the side of ontology 1 is anode, ontology 1
The other side be cathode, the thin grid 3 of 3 main grids 2 and 96 are evenly equipped on anode, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
It connects, the spacing between every main grid 2 is 55 millimeters, and the width of main grid 2 is 1.5 millimeters, and thin 3 spacing of grid is 1.8 millimeters, thin grid 3
Width be 0.04 millimeter.
As shown in Figure 1, main grid 2 is uniformly arranged by several segments main grid section longitudinal arrangement；The length of each main grid section is 10 millis
Rice；The length of thin grid 3 is 160 millimeters.
As shown in Fig. 2, the diffusion technique of this solar battery sheet, the technique the following steps are included:
A, low temperature depositing: ontology being placed in common diffusion furnace, and temperature is kept for 10 minutes at 800 DEG C in diffusion furnace,
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in the time range into diffusion furnace, big nitrogen and oxygen volume ratio are 15:1, small
The volume ratio of nitrogen and both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min, the flow of oxygen in step A
For 0.6L/min, the flow of big nitrogen is 7L/min；
B, alternating temperature deposits: the temperature in diffusion furnace being promoted to 825 DEG C in 9 minutes, within this time range to diffusion
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in furnace, big nitrogen and oxygen volume ratio are 15:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition: carrying out heat preservation in 5 minutes at 825 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen and oxygen volume ratio are 15:1, and the volume ratio of small nitrogen and both big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, it heats up: the temperature in diffusion furnace will be risen to 835 DEG C in 12 minutes, be passed through in temperature-rise period into diffusion furnace big
Nitrogen；
E, after stablizing after in diffusion furnace in 835 DEG C of temperature when, big nitrogen high temperature knot: is passed through into diffusion furnace in 12 minutes
With the mixed gas of oxygen, oxygen accounts for the 36% of mixed gas volume；
F, cooling: being down to 790 DEG C for the temperature in diffusion furnace in 15 minutes, this is passed through into diffusion furnace big in the process
The mixed gas of nitrogen, oxygen, oxygen account for the 36% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Amount is 2L/min~2.5L/min, and the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of ontology is 98 Ω/.
Following table is the electrical property number for listing the solar battery sheet and conventional solar battery sheet of the embodiment of the present invention two
According to:
Embodiment three:
As shown in Figure 1, this solar battery sheet, it includes plate-like ontology 1, and the side of ontology 1 is anode, ontology 1
The other side be cathode, the thin grid 3 of 3 main grids 2 and 96 are evenly equipped on anode, main grid 2 is vertically arranged with thin grid 3 and they are electrically connected
It connects, the spacing between every main grid 2 is 50-52 millimeters, and the width of main grid 2 is 1.3 millimeters, and thin 3 spacing of grid is 1.5 millimeters, carefully
The width of grid 3 is 0.035 millimeter.
As shown in Figure 1, main grid 2 is uniformly arranged by several segments main grid section longitudinal arrangement；The length of each main grid section is 9 millis
Rice；The length of thin grid 3 is 155 millimeters.
As shown in Fig. 2, the diffusion technique of this solar battery sheet, the technique the following steps are included:
A, low temperature depositing: ontology being placed in common diffusion furnace, and temperature is kept for 7 minutes at 780 DEG C in diffusion furnace, at this
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in time range into diffusion furnace, big nitrogen and oxygen volume ratio are 15:1, small nitrogen
Volume ratio with both big nitrogen and oxygen mixed gas is 10:100；Small nitrogen flow is 2L/min in step A, and the flow of oxygen is
0.6L/min, the flow of big nitrogen are 7L/min；
B, alternating temperature deposits: the temperature in diffusion furnace being promoted to 820 DEG C in 7 minutes, within this time range to diffusion
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in furnace, big nitrogen and oxygen volume ratio are 15:1, small nitrogen and both big nitrogen and oxygen
The volume ratio of mixed gas is 12:100；Small nitrogen flow is 2.5L/min in step B, and the flow of oxygen is 0.6L/min, big nitrogen
Flow be 7L/min；
C, high temperature deposition: carrying out heat preservation in 3 minutes at 820 DEG C, be passed through into diffusion furnace during this big nitrogen, oxygen and
The mixed gas of small nitrogen, big nitrogen and oxygen volume ratio are 15:1, and the volume ratio of small nitrogen and both big nitrogen and oxygen mixed gas is
11:100；Small nitrogen flow is 2.2L/min in step C, and the flow of oxygen is 0.6L/min, and the flow of big nitrogen is 7L/min；
D, it heats up: the temperature in diffusion furnace will be risen to 835 DEG C in 11 minutes, be passed through in temperature-rise period into diffusion furnace big
Nitrogen；
E, after stablizing after in diffusion furnace in 835 DEG C of temperature when, big nitrogen high temperature knot: is passed through into diffusion furnace in 11 minutes
With the mixed gas of oxygen, oxygen accounts for the 34% of mixed gas volume；
F, cooling: being down to 790 DEG C for the temperature in diffusion furnace in 12 minutes, this is passed through into diffusion furnace big in the process
The mixed gas of nitrogen, oxygen, oxygen account for the 34% of mixed gas volume.
Gas flow rate constant in diffusion furnace；It is 8L/min -11L/min that gas in diffusion furnace, which is passed through flow,；Small nitrogen stream
Amount is 2L/min~2.5L/min, and the flow of oxygen is 0.5L/min~0.8L/min, and the flow of big nitrogen is 7L/min~7.7L/
minL/min。
The square resistance of ontology is 95 Ω/.
Following table is the electrical property number for listing the solar battery sheet and conventional solar battery sheet of the embodiment of the present invention three
According to:
It is obtained by above example, the method for the present invention controls the square resistance of silicon wafer in 92-98 Ω/ 3 masters of matching
Grid and 96 thin grid anode halftone, compared to one time constant temperature deposit and spread can make the sun of production in the case where not increasing cost
Energy cell piece obtains high transfer efficiency.
Specific embodiment described herein is only an example for the spirit of the invention.The neck of technology belonging to the present invention
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (2)
1. the diffusion technique of solar battery sheet, the technique the following steps are included:
A, low temperature depositing: ontology being placed in common diffusion furnace, and temperature is kept for 7 minutes at 780 DEG C in diffusion furnace, in the time
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in range into diffusion furnace, big nitrogen and oxygen volume ratio are 15:1, the small nitrogen
Volume: volume=10:100 of big both nitrogen and oxygen mixed gas；Small nitrogen flow is 2L/min, the stream of oxygen in step A
Amount is 0.6L/min, and the flow of big nitrogen is 7L/min；
B, alternating temperature deposit: the temperature in diffusion furnace is promoted to 815-825 DEG C in 6-9 minutes, within this time range to
The mixed gas of big nitrogen, oxygen and small nitrogen is passed through in diffusion furnace, the big nitrogen and oxygen volume ratio are 15:1, the body of the small nitrogen
Product: volume=12:100 of big both nitrogen and oxygen mixed gas；
C, high temperature deposition: carrying out heat preservation in 2-5 minutes at 815-825 DEG C, this is passed through big nitrogen, oxygen into diffusion furnace in the process
The mixed gas of gas and small nitrogen, the big nitrogen and oxygen volume ratio are 15:1, and the volume of the small nitrogen: big both nitrogen and oxygen are mixed
Close volume ratio=11:100 of gas；
D, it heats up: the temperature in diffusion furnace will be risen to 835 DEG C in 10-12 minutes, be passed through in temperature-rise period into diffusion furnace big
Nitrogen；
E, after stablizing after in diffusion furnace in 835 DEG C of temperature when, big nitrogen high temperature knot: is passed through into diffusion furnace in 10-12 minutes
With the mixed gas of oxygen, the oxygen accounts for 32%-the 36% of above-mentioned mixed gas volume；
F, cooling: being down to 790 DEG C for the temperature in diffusion furnace in 10-15 minutes, this is passed through into diffusion furnace big in the process
The mixed gas of nitrogen, oxygen, the oxygen account for 32%-the 36% of above-mentioned mixed gas volume.
2. the diffusion technique of solar battery sheet according to claim 1, which is characterized in that small described in the step A
Nitrogen flow is 2L/min, and the flow of the oxygen is 0.6L/min, and the flow of the big nitrogen is 7L/min；Institute in the step B
Stating small nitrogen flow is 2.5L/min, and the flow of the oxygen is 0.6L/min, and the flow of the big nitrogen is 7L/min；The step
Small nitrogen flow described in C is 2.2L/min, and the flow of the oxygen is 0.6L/min, and the flow of the big nitrogen is 7L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318096.5A CN106024599B (en) | 2015-01-12 | 2015-01-12 | The diffusion technique of solar battery sheet |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318096.5A CN106024599B (en) | 2015-01-12 | 2015-01-12 | The diffusion technique of solar battery sheet |
| CN201510014375.8A CN104617163B (en) | 2015-01-12 | 2015-01-12 | A kind of solar battery sheet and diffusion technique thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014375.8A Division CN104617163B (en) | 2015-01-12 | 2015-01-12 | A kind of solar battery sheet and diffusion technique thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024599A CN106024599A (en) | 2016-10-12 |
| CN106024599B true CN106024599B (en) | 2018-12-04 |
Family
ID=53151520
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014375.8A Active CN104617163B (en) | 2015-01-12 | 2015-01-12 | A kind of solar battery sheet and diffusion technique thereof |
| CN201610318096.5A Active CN106024599B (en) | 2015-01-12 | 2015-01-12 | The diffusion technique of solar battery sheet |
| CN201610322851.7A Active CN105957904B (en) | 2015-01-12 | 2015-01-12 | The diffusion technique of improved solar battery sheet |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510014375.8A Active CN104617163B (en) | 2015-01-12 | 2015-01-12 | A kind of solar battery sheet and diffusion technique thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610322851.7A Active CN105957904B (en) | 2015-01-12 | 2015-01-12 | The diffusion technique of improved solar battery sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN104617163B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206267A (en) * | 2016-07-26 | 2016-12-07 | 润峰电力有限公司 | A kind of crystal silicon chip method for diffusing high sheet resistance |
| CN107195706A (en) * | 2017-06-23 | 2017-09-22 | 浙江光隆能源科技股份有限公司 | The process for etching and diffusion technique of a kind of diamond wire solar battery sheet |
| CN109545899A (en) * | 2018-12-03 | 2019-03-29 | 江苏中宇光伏科技有限公司 | A kind of solar battery sheet production nitrogen envelope technique |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4121928B2 (en) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | Manufacturing method of solar cell |
| CN102738257A (en) * | 2012-06-15 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Low-cost efficient solar cell electrode grid line structure |
| WO2012145864A1 (en) * | 2011-04-29 | 2012-11-01 | 无锡尚德太阳能电力有限公司 | Solar cell, solar cell assembly, and manufacturing methods thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8574950B2 (en) * | 2009-10-30 | 2013-11-05 | International Business Machines Corporation | Electrically contactable grids manufacture |
| CN102254991B (en) * | 2011-06-30 | 2014-02-05 | 浚鑫科技股份有限公司 | Crystalline silicon solar cell and diffusion method thereof |
| CN102383198B (en) * | 2011-10-12 | 2014-01-15 | 润峰电力有限公司 | Three-step variable-temperature diffusion process for silicon cell |
| CN102691107A (en) * | 2012-06-11 | 2012-09-26 | 上海超日(洛阳)太阳能有限公司 | Diffusion process for solar battery preparation |
-
2015
- 2015-01-12 CN CN201510014375.8A patent/CN104617163B/en active Active
- 2015-01-12 CN CN201610318096.5A patent/CN106024599B/en active Active
- 2015-01-12 CN CN201610322851.7A patent/CN105957904B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4121928B2 (en) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | Manufacturing method of solar cell |
| WO2012145864A1 (en) * | 2011-04-29 | 2012-11-01 | 无锡尚德太阳能电力有限公司 | Solar cell, solar cell assembly, and manufacturing methods thereof |
| CN102738257A (en) * | 2012-06-15 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Low-cost efficient solar cell electrode grid line structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106024599A (en) | 2016-10-12 |
| CN105957904A (en) | 2016-09-21 |
| CN104617163A (en) | 2015-05-13 |
| CN105957904B (en) | 2017-11-28 |
| CN104617163B (en) | 2016-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102820383B (en) | Spread method of polycrystalline silicon solar cell | |
| CN106057980B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN102383198B (en) | Three-step variable-temperature diffusion process for silicon cell | |
| CN105280484B (en) | A kind of diffusion technique of crystalline silicon high-efficiency high sheet resistance battery piece | |
| CN107946405B (en) | A kind of production method being passivated contact solar cell | |
| CN106024599B (en) | The diffusion technique of solar battery sheet | |
| WO2013044611A1 (en) | Solar cell sheet and heat treatment process thereof | |
| CN103715308A (en) | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell | |
| CN107293617A (en) | A kind of high-efficiency low-cost solar battery diffusion technology | |
| CN102332491A (en) | Method for rapidly sintering solar wafer | |
| CN105702805B (en) | The laser enhancing hydrogen passivation method of efficient passivation low price silicon materials defect and impurity and application | |
| CN103094417B (en) | The method for manufacturing solar battery of the emitter structure of low high low doping concentration | |
| CN204966525U (en) | Improve volume production device of photic decay of P type crystal silicon battery fast | |
| CN106340567B (en) | A kind of Liang Bu TongYuans technique that pressure is opened applied to solar cell lifting | |
| CN105870217B (en) | Improved diffusion technology of polycrystalline solar cell | |
| CN105308757B (en) | For reducing the method deteriorated caused by the excess carriers in silicon substrate | |
| CN109860312B (en) | Boron diffusion back passivation process for P-type crystalline silicon solar cell | |
| CN204668282U (en) | A kind of high-temperature low-pressure disperser | |
| CN104752564A (en) | Novel diffusion process capable of increasing polysilicon open-circuit voltage | |
| CN103280492A (en) | Method for manufacturing high-sheet-resistance solar cells | |
| CN105762066B (en) | The diffusion technique of polycrystalline solar cell | |
| CN203976978U (en) | A kind of novel diffusion furnace | |
| CN103515486A (en) | Method for preparing backside point contact solar battery through plate type PECVD | |
| CN106098805A (en) | A kind of four main grid polycrystalline solar cell and diffusion techniques thereof | |
| CN108511563A (en) | A kind of production method of PN junction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |