CN103280492A - Method for manufacturing high-sheet-resistance solar cells - Google Patents
Method for manufacturing high-sheet-resistance solar cells Download PDFInfo
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- CN103280492A CN103280492A CN201310211981XA CN201310211981A CN103280492A CN 103280492 A CN103280492 A CN 103280492A CN 201310211981X A CN201310211981X A CN 201310211981XA CN 201310211981 A CN201310211981 A CN 201310211981A CN 103280492 A CN103280492 A CN 103280492A
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Abstract
The invention relates to a method for manufacturing a high-sheet-resistance solar cell. The method for manufacturing the high-sheet-resistance solar cell particularly comprises the following steps that (1) emitters are manufactured on the surfaces of flocked silicon slices, (2) etching peripherally and removing phosphorosilicate glass are sequentially conducted on the silicon slices obtained from the step (1), (3) high-sheet-resistance emitter manufacture is conducted on the silicon slices obtained from the step (2), and (4) depositing silicon nitride films, screen printing a front electrode, a back electrode and back aluminum , sintering are again sequentially conducted on the silicon slices obtained from the step (3). According to the method for manufacturing the high-sheet-resistance solar cells, an emitter structure which can form low surface doping concentration is mainly provided, a dead-layer emitter area on the surface of the solar cell can be effectively removed, a diffused doping concentration structure can be controlled, uniformity of diffusion sheet resistance is improved, and the service life of minority carriers is prolonged. Besides, short-wave response of the solar cell is further improved, dark current is reduced, open-circuit voltage of the solar cell can be improved, and the method is suitable for industrialized production.
Description
Technical field
The present invention relates to the solar cell manufacture technology field, be specifically related to a kind of manufacture method of high square resistance solar cell.
Background technology
In various solar cells, crystal silicon cell is always in occupation of most important status.In recent years, crystal-silicon solar cell raise the efficiency and reduce cost aspect obtained great achievement and progress, further improved its superiority in following photovoltaic industry.
Emitter is as the core component of solar cell, and its surface doping concentration will directly influence the transformation efficiency of solar cell.Solar cell has two requirements to emitter: 1. doping content can not be too high, and 2. surface concentration can not be low excessively.
At present, the emitter of conventional diffusion way making can't be taken into account above two kinds of requirements simultaneously.Usually, if doping content can not be too high, auger recombination can increase greatly, and the minority carrier that forms in the emitter region is easy to compound, causes short wave response to descend; If reduction surface concentration, junction depth also can shoal, sheet resistance is higher, and the resistance of emitter must strengthen, thereby has increased in the emitter region resistance to the gate line electrode flow currents, in follow-up electrode sintering process, increase the probability that PN junction burns, reduced the battery yield.
Summary of the invention
The manufacture method of a kind of high square resistance solar cell of providing at the problems referred to above is provided, adopts this method can effectively improve the electricity conversion of battery.
The technical scheme that the manufacture method of a kind of high square resistance solar cell of the present invention adopts, step comprises:
(1) silicon chip after the making herbs into wool is carried out the surface and make emitter;
(2) step (1) gained silicon chip is carried out peripheral etching, phosphorosilicate glass removal;
(3) step (2) gained silicon chip being carried out the high square resistance emitter makes;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and back of the body aluminium, sintering step.
The emitter junction depth is the 0.1-0.5 micron in the step (1), and side's resistance is 50-75ohm/sq.、
Preferably, the emitter junction depth is 0.4 micron in the step (1), and side's resistance is 55ohm/sq.
The high square resistance emitter is that silicon chip is inserted phosphoric acid, HF and HNO in the step (3)
3Mixed liquor in make, etching time 50-500s makes the resistance of emitter side, back and is 70-100ohm/sq.Described phosphoric acid, HF and HNO
3Mixeding liquid temperature be 0-30 ℃, the mass fraction of phosphoric acid is 0.01-1%, the mass fraction of HF is 1-10%, HNO
3Mass fraction be 5-30%.
Preferably, described phosphoric acid, HF and HNO
3Mixeding liquid temperature be 15 ℃, the mass fraction of phosphoric acid is that the mass fraction of 0.05%, HF is 3.6%, HNO
3Mass fraction be 12.5%.
Described silicon chip is monocrystalline silicon, polysilicon or quasi-monocrystalline silicon; Be preferably polysilicon or quasi-monocrystalline silicon.
The invention has the beneficial effects as follows: the invention provides a kind of emitter structure that can form low surface doping concentration, can effectively remove dead layer emitter region and the control diffusion back doping content structure of battery surface, improved minority carrier lifetime; Adding phosphoric acid in the corrosion process is to react more stable, improves the uniformity of diffusion side's resistance.In addition, the present invention can also improve the short wave response of battery, reduces dark current, improves the open circuit voltage of battery, and the present invention not only is fit to various crystal silicon cells, and can effectively improve the conversion efficiency of solar cell, is applicable to commercial Application.
Description of drawings:
Figure 1 shows that diffusing, doping schematic diagram of the present invention.
Among the figure, 1. P atom, 2. heavy doping emitter, 3. light dope emitter, 4. silicon chip.
Embodiment:
In order to understand the present invention better, below in conjunction with example technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1:
Select monocrystalline silicon piece; Silicon chip 4 is put into diffusion furnace with silicon chip 4 and is carried out P atom 1 deposition through conventional cleaning and making herbs into wool, makes 0.4 micron of junction depth, and resistance 55 ohm/sq in side's put into phosphoric acid, HF and HNO through peripheral etching, phosphorosilicate glass after removing
3Mixed liquor in, solution temperature is 15 ℃, the mass fraction of phosphoric acid is that 0.05%, HF mass fraction is 3.6%, HNO
3Mass fraction is to carry out the 360s corrosion in 12.5% the solution, removes heavy doping emitter 2, makes the resistance of emitter side, back and is 80ohm/sq, and the surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering more successively, obtain the finished product solar battery sheet.The battery sheet of the embodiment of the invention 1 gained battery sheet and prior art is compared, and the result is as follows:
The unit for electrical property parameters of table 1 solar battery sheet
| ? | Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current |
| The technology of the present invention | 4.454 | 0.6355 | 8.858 | 79.12 | 18.30% | 0.173 |
| Prior art | 4.440 | 0.6337 | 8.863 | 79.06 | 18.25% | 0.318 |
Embodiment 2:
Select polysilicon chip; Silicon chip 4 is put into diffusion furnace with silicon chip 4 and is carried out P atom 1 deposition through conventional cleaning and making herbs into wool, makes 0.3 micron of junction depth, and resistance 70 ohm/sq in side's put into phosphoric acid, HF and HNO through peripheral etching, phosphorosilicate glass after removing
3Mixed liquor in, solution temperature is 5 ℃, the mass fraction of phosphoric acid is that 0.3%, HF mass fraction is 7.0%, HNO
3Mass fraction is to carry out the 100s corrosion in 21.6% the solution, removes heavy doping emitter 2, makes the resistance of emitter side, back and is 80ohm/sq, and the surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering more successively, obtain the finished product solar battery sheet.The battery sheet of the embodiment of the invention 2 gained battery sheets and prior art is compared, and the result is as follows:
The unit for electrical property parameters of table 2 solar battery sheet
| ? | Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current |
| The technology of the present invention | 4.213 | 0.6256 | 8.546 | 78.80 | 17.31% | 0.306 |
| Prior art | 4.191 | 0.6231 | 8.540 | 78.76 | 17.22% | 0.423 |
As can be seen, the solar cell that the present invention makes can reduce its dark current from embodiment, improves the open circuit voltage of battery, and can effectively improve the conversion efficiency of solar cell.
Claims (8)
1. the manufacture method of a high square resistance solar cell, step comprises:
(1) silicon chip after the making herbs into wool is carried out the surface and make emitter;
(2) step (1) gained silicon chip is carried out peripheral etching, phosphorosilicate glass removal;
(3) step (2) gained silicon chip being carried out the high square resistance emitter makes;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and back of the body aluminium, sintering step.
2. the manufacture method of a kind of high square resistance solar cell according to claim 1 is characterized in that: the emitter junction depth is the 0.1-0.5 micron in the step (1), and side's resistance is 50-75ohm/sq.
3. the manufacture method of a kind of high square resistance solar cell according to claim 2 is characterized in that: the emitter junction depth is 0.4 micron in the step (1), and side's resistance is 55ohm/sq.
4. the manufacture method of a kind of high square resistance solar cell according to claim 1 is characterized in that: the high square resistance emitter is that silicon chip is inserted phosphoric acid, HF and HNO in the step (3)
3Mixed liquor in make, etching time 50-500s makes the resistance of emitter side, back and is 70-100ohm/sq.
5. the manufacture method of a kind of high square resistance solar cell according to claim 4 is characterized in that: described phosphoric acid, HF and HNO
3Mixeding liquid temperature be 0-30 ℃, the mass fraction of phosphoric acid is 0.01-1%, the mass fraction of HF is 1-10%, HNO
3Mass fraction be 5-30%.
6. the manufacture method of a kind of high square resistance solar cell according to claim 5 is characterized in that: described phosphoric acid, HF and HNO
3Mixeding liquid temperature be 15 ℃, the mass fraction of phosphoric acid is that the mass fraction of 0.05%, HF is 3.6%, HNO
3Mass fraction be 12.5%.
7. the manufacture method of a kind of high square resistance solar cell according to claim 1, it is characterized in that: described silicon chip is monocrystalline silicon, polysilicon or quasi-monocrystalline silicon.
8. the manufacture method of a kind of high square resistance solar cell according to claim 7, it is characterized in that: described silicon chip is polysilicon or quasi-monocrystalline silicon.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN105226111A (en) * | 2015-09-01 | 2016-01-06 | 浙江晶科能源有限公司 | A kind of preparation method of solar cell emitter |
| CN108075011A (en) * | 2016-11-10 | 2018-05-25 | 中国电子科技集团公司第四十八研究所 | The preparation method of resistance dense-grid solar cell |
| CN111668347A (en) * | 2020-07-10 | 2020-09-15 | 西安交通大学 | Preparation method of surface pn crystal silicon-based solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103022174A (en) * | 2012-11-07 | 2013-04-03 | 浙江晶科能源有限公司 | Metal penetrated back emitter crystalline silicon solar cell based on n-type silicon chip and preparation method thereof |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103022174A (en) * | 2012-11-07 | 2013-04-03 | 浙江晶科能源有限公司 | Metal penetrated back emitter crystalline silicon solar cell based on n-type silicon chip and preparation method thereof |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN105226111A (en) * | 2015-09-01 | 2016-01-06 | 浙江晶科能源有限公司 | A kind of preparation method of solar cell emitter |
| CN108075011A (en) * | 2016-11-10 | 2018-05-25 | 中国电子科技集团公司第四十八研究所 | The preparation method of resistance dense-grid solar cell |
| CN111668347A (en) * | 2020-07-10 | 2020-09-15 | 西安交通大学 | Preparation method of surface pn crystal silicon-based solar cell |
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