CN103280492B - A kind of manufacture method of high square resistance solar cell - Google Patents
A kind of manufacture method of high square resistance solar cell Download PDFInfo
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- CN103280492B CN103280492B CN201310211981.XA CN201310211981A CN103280492B CN 103280492 B CN103280492 B CN 103280492B CN 201310211981 A CN201310211981 A CN 201310211981A CN 103280492 B CN103280492 B CN 103280492B
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Abstract
The present invention relates to a kind of manufacture method of high square resistance solar cell.It specifically has the following steps: the silicon chip surface after making herbs into wool is made emitter by (1); (2) step (1) gained silicon chip is carried out successively periphery etching, phosphorosilicate glass is removed; (3) step (2) gained silicon chip is carried out the making of high square resistance emitter; (4) step (3) gained silicon chip is adopted successively again silicon nitride film, silk-screen positive and negative electrode and the back of the body aluminium, sintering.The preparation method of the high square resistance crystal silicon solar cell sheet that the present invention proposes, mainly provide a kind of emitter structure that can form low surface dopant concentration, effectively can remove the dead layer emitter region of battery surface and control the rear doping content structure of diffusion, improving uniformity and the minority carrier lifetime of diffused sheet resistance; In addition, the present invention can also improve the short wave response of battery, reduces dark current, improves the open circuit voltage of battery, and is suitable for suitability for industrialized production.
Description
Technical field
The present invention relates to solar cell manufacture technology field, be specifically related to a kind of manufacture method of high square resistance solar cell.
Background technology
In various solar cell, crystal silicon cell is always in occupation of most important status.In recent years, in crystal-silicon solar cell is raised the efficiency and reduced costs, achieve great achievement and progress, further increase its superiority in following photovoltaic industry.
Emitter is as the core component of solar cell, and its surface dopant concentration will directly affect the transformation efficiency of solar cell.Solar cell has two requirements to emitter: 1. doping content can not be too high, and 2. surface concentration can not be too low.
At present, the emitter that conventional diffusion way makes cannot take into account above two kinds of requirements simultaneously.Usually, if doping content can not be too high, auger recombination can increase greatly, and the minority carrier formed in emitter region is easy to compound, causes short wave response to decline; If reduction surface concentration, junction depth also can shoal, sheet resistance is higher, and the resistance of emitter must strengthen, thus adds the resistance to gate line electrode flow currents in emitter region, in follow-up electrode sintering process, add the probability that PN junction burns, reduce battery yield.
Summary of the invention
The manufacture method of a kind of high square resistance solar cell provided for the problems referred to above is provided, adopts the method effectively can improve the electricity conversion of battery.
The technical scheme of the manufacture method employing of a kind of high square resistance solar cell of the present invention, step comprises:
(1) silicon chip after making herbs into wool is carried out surface and make emitter;
(2) step (1) gained silicon chip is carried out periphery etching, phosphorosilicate glass is removed;
(3) step (2) gained silicon chip is carried out the making of high square resistance emitter;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and the back of the body aluminium, sintering step.
In step (1), emitter junction depth is 0.1-0.5 micron, and sheet resistance is 50-75ohm/sq.、
Preferably, in step (1), emitter junction depth is 0.4 micron, and sheet resistance is 55ohm/sq.
In step (3), high square resistance emitter is that silicon chip is inserted phosphoric acid, HF and HNO
3mixed liquor in make, etching time 50-500s, make after emitter sheet resistance be 70-100ohm/sq.Described phosphoric acid, HF and HNO
3mixeding liquid temperature be 0-30 DEG C, the mass fraction of phosphoric acid is the mass fraction of 0.01-1%, HF is 1-10%, HNO
3mass fraction be 5-30%.
Preferably, described phosphoric acid, HF and HNO
3mixeding liquid temperature be 15 DEG C, the mass fraction of phosphoric acid is the mass fraction of 0.05%, HF is 3.6%, HNO
3mass fraction be 12.5%.
Described silicon chip is monocrystalline silicon, polysilicon or quasi-monocrystalline silicon; Be preferably polysilicon or quasi-monocrystalline silicon.
The invention has the beneficial effects as follows: the invention provides a kind of emitter structure that can form low surface dopant concentration, effectively can remove the dead layer emitter region of battery surface and control the rear doping content structure of diffusion, improve minority carrier lifetime; Adding phosphoric acid in corrosion process is react more stable, improves the uniformity of diffused sheet resistance.In addition, the present invention can also improve the short wave response of battery, reduces dark current, improves the open circuit voltage of battery, and the present invention is not only applicable to various crystal silicon cell, and effectively can improve the conversion efficiency of solar cell, is applicable to commercial Application.
accompanying drawing illustrates:
Figure 1 shows that diffusing, doping schematic diagram of the present invention.
In figure, 1.P atom, 2. heavy doping emitter, 3. light dope emitter, 4. silicon chip.
embodiment:
In order to understand the present invention better, below in conjunction with example, technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1:
Select monocrystalline silicon piece; Silicon chip 4 is through conventional cleaning and making herbs into wool, and silicon chip 4 is put into diffusion furnace and carry out P atom 1 and deposit, make junction depth 0.4 micron, sheet resistance 55ohm/sq puts into phosphoric acid, HF and HNO through periphery etching, phosphorosilicate glass after removing
3mixed liquor in, solution temperature is 15 DEG C, and to be 0.05%, HF mass fraction be the mass fraction of phosphoric acid 3.6%, HNO
3mass fraction is carry out 360s corrosion in the solution of 12.5%, removes heavy doping emitter 2, and after making, emitter sheet resistance is 80ohm/sq, and surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering successively again, obtain finished product solar battery sheet.Compared by the cell piece of the embodiment of the present invention 1 gained cell piece and prior art, result is as follows:
The unit for electrical property parameters of table 1 solar battery sheet
| Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current | |
| The technology of the present invention | 4.454 | 0.6355 | 8.858 | 79.12 | 18.30% | 0.173 |
| Prior art | 4.440 | 0.6337 | 8.863 | 79.06 | 18.25% | 0.318 |
Embodiment 2:
Select polysilicon chip; Silicon chip 4 is through conventional cleaning and making herbs into wool, and silicon chip 4 is put into diffusion furnace and carry out P atom 1 and deposit, make junction depth 0.3 micron, sheet resistance 70ohm/sq puts into phosphoric acid, HF and HNO through periphery etching, phosphorosilicate glass after removing
3mixed liquor in, solution temperature is 5 DEG C, and to be 0.3%, HF mass fraction be the mass fraction of phosphoric acid 7.0%, HNO
3mass fraction is carry out 100s corrosion in the solution of 21.6%, removes heavy doping emitter 2, and after making, emitter sheet resistance is 80ohm/sq, and surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering successively again, obtain finished product solar battery sheet.Compared by the cell piece of the embodiment of the present invention 2 gained cell piece and prior art, result is as follows:
The unit for electrical property parameters of table 2 solar battery sheet
| Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current | |
| The technology of the present invention | 4.213 | 0.6256 | 8.546 | 78.80 | 17.31% | 0.306 |
| Prior art | 4.191 | 0.6231 | 8.540 | 78.76 | 17.22% | 0.423 |
As can be seen from embodiment, the solar cell that the present invention makes can reduce its dark current, improves the open circuit voltage of battery, and effectively can improve the conversion efficiency of solar cell.
Claims (1)
1. a manufacture method for high square resistance solar cell, step comprises:
(1) silicon chip after making herbs into wool is carried out surface and make emitter;
(2) step (1) gained silicon chip is carried out periphery etching, phosphorosilicate glass is removed;
(3) step (2) gained silicon chip is carried out the making of high square resistance emitter;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and the back of the body aluminium, sintering step;
In step (1), emitter junction depth is 0.4 micron, and sheet resistance is 55ohm/sq;
In step (3), high square resistance emitter is that silicon chip is inserted phosphoric acid, HF and HNO
3mixed liquor in make, etching time 50-500s, make after emitter sheet resistance be 70-100ohm/sq;
Described phosphoric acid, HF and HNO
3mixeding liquid temperature be 15 DEG C, the mass fraction of phosphoric acid is the mass fraction of 0.05%, HF is 3.6%, HNO
3mass fraction be 12.5%;
Described silicon chip is polysilicon or quasi-monocrystalline silicon.
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| CN103280492B true CN103280492B (en) | 2015-12-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103337552A (en) * | 2013-05-31 | 2013-10-02 | 山东力诺太阳能电力股份有限公司 | Solar cell making method having low surface doping concentration emitter electrode structure |
| CN105226111A (en) * | 2015-09-01 | 2016-01-06 | 浙江晶科能源有限公司 | A kind of preparation method of solar cell emitter |
| CN108075011A (en) * | 2016-11-10 | 2018-05-25 | 中国电子科技集团公司第四十八研究所 | The preparation method of resistance dense-grid solar cell |
| CN111668347B (en) * | 2020-07-10 | 2022-08-09 | 西安交通大学 | Preparation method of surface pn crystal silicon-based solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103022174A (en) * | 2012-11-07 | 2013-04-03 | 浙江晶科能源有限公司 | Metal penetrated back emitter crystalline silicon solar cell based on n-type silicon chip and preparation method thereof |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102776515A (en) * | 2012-08-08 | 2012-11-14 | 泰通(泰州)工业有限公司 | Wet etching process for improving emitter square resistance |
| CN103022174A (en) * | 2012-11-07 | 2013-04-03 | 浙江晶科能源有限公司 | Metal penetrated back emitter crystalline silicon solar cell based on n-type silicon chip and preparation method thereof |
| CN103094418A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Solar cell preparation method |
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