CN103337552A - Solar cell making method having low surface doping concentration emitter electrode structure - Google Patents
Solar cell making method having low surface doping concentration emitter electrode structure Download PDFInfo
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- CN103337552A CN103337552A CN2013102113885A CN201310211388A CN103337552A CN 103337552 A CN103337552 A CN 103337552A CN 2013102113885 A CN2013102113885 A CN 2013102113885A CN 201310211388 A CN201310211388 A CN 201310211388A CN 103337552 A CN103337552 A CN 103337552A
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Abstract
The invention relates to a solar cell making method having a low surface doping concentration emitter electrode structure. The method comprises steps that: (1), emitter electrode making is carried out on a surface of a silicon chip after texturing; (2), circumferential etching and phosphorosilicate glass removal are sequentially carried out on the silicon chip acquired in the step (1); (3) high sheet resistance emitter electrode making is carried out on the silicon chip acquired in the step (2); and (4), steps of silicon nitride membrane deposition, front-back electrode silkscreen printing and aluminum backing and sintering on the silicon chip acquired in the step (3) are sequentially carried out. According to the solar cell making method, the emitter electrode structure capable of forming low surface doping concentration is mainly provided, so removal of a dead layer emitter electrode area from a surface of a cell and control of the doping concentration structure after diffusion can be effectively realized, uniformity of diffusion sheet resistance and lifetime of minority carriers are improved, moreover, the solar cell making method can improve short wave response of the cell, reduce a dark current, improve an open-circuit voltage of the cell and be applicable to industrialization production.
Description
Technical field
The present invention relates to the solar cell manufacture technology field, be specifically related to a kind of method for manufacturing solar battery with low surface doping concentration emitter structure.
Background technology
In various solar cells, crystal silicon cell is always in occupation of most important status.In recent years, crystal-silicon solar cell raise the efficiency and reduce cost aspect obtained great achievement and progress, further improved its superiority in following photovoltaic industry.
Emitter is as the core component of solar cell, and its surface doping concentration will directly influence the transformation efficiency of solar cell.Solar cell has two requirements to emitter: 1. doping content can not be too high, and 2. surface concentration can not be low excessively.
At present, the emitter of conventional diffusion way making can't be taken into account above two kinds of requirements simultaneously.Usually, if doping content can not be too high, auger recombination can increase greatly, and the minority carrier that forms in the emitter region is easy to compound, causes short wave response to descend; If reduction surface concentration, junction depth also can shoal, sheet resistance is higher, and the resistance of emitter must strengthen, thereby has increased in the emitter region resistance to the gate line electrode flow currents, in follow-up electrode sintering process, increase the probability that PN junction burns, reduced the battery yield.
Summary of the invention
The method for manufacturing solar battery with low surface doping concentration emitter structure that provides at the problems referred to above is provided, adopts this method can effectively improve the electricity conversion of battery.
The technical scheme that method for manufacturing solar battery with low surface doping concentration emitter structure of the present invention adopts, step comprises:
(1) silicon chip after the making herbs into wool is carried out the surface and make emitter;
(2) step (1) gained silicon chip is carried out peripheral etching, phosphorosilicate glass removal;
(3) step (2) gained silicon chip being carried out the high square resistance emitter makes;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and back of the body aluminium, sintering step.
The emitter junction depth is the 0.1-0.5 micron in the step (1), and side's resistance is 50-75ohm/sq.
Preferably, the emitter junction depth is 0.4 micron in the step (1), and side's resistance is 55ohm/sq.
The high square resistance emitter is that silicon chip is inserted sodium acetate, HF and HNO in the step (3)
3Mixed liquor in make, etching time 60-1000s makes the resistance of emitter side, back and is 70-100ohm/sq.The mixeding liquid temperature of described sodium acetate, NaOH and isopropyl alcohol is 50-100 ℃, and the mass fraction of sodium acetate is 0.01-1%, and the mass fraction of NaOH is 0.1-10%, and the mass fraction of isopropyl alcohol is 1-20%.
Preferably, the mixeding liquid temperature of described sodium acetate, NaOH and isopropyl alcohol is 65 ℃, and the mass fraction of sodium acetate is that the mass fraction of 0.01%, NaOH is 2.5%, and the mass fraction of isopropyl alcohol is 5.6%.
Described silicon chip is monocrystalline silicon, polysilicon or quasi-monocrystalline silicon; Be preferably and be monocrystalline silicon or quasi-monocrystalline silicon.
The invention has the beneficial effects as follows: the invention provides the method for manufacturing solar battery with low surface doping concentration emitter structure, can effectively remove dead layer emitter region and the control diffusion back doping content structure of battery surface, improve minority carrier lifetime; Adding sodium acetate in the corrosion process is to react more stable, improves the uniformity of diffusion side's resistance.In addition, the present invention can also improve the short wave response of battery, reduces dark current, improves the open circuit voltage of battery, and the present invention not only is fit to various crystal silicon cells, and can effectively improve the conversion efficiency of solar cell, is applicable to commercial Application.
Description of drawings:
Figure 1 shows that diffusing, doping schematic diagram of the present invention.
Among the figure, 1. P atom, 2. heavy doping emitter, 3. light dope emitter, 4. silicon chip.
Embodiment:
In order to understand the present invention better, below in conjunction with example technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1:
Select monocrystalline silicon piece; Silicon chip 4 is through conventional cleaning and making herbs into wool, silicon chip 4 is put into diffusion furnace carry out P atom 1 deposition, make 0.4 micron of junction depth, after removing through peripheral etching, phosphorosilicate glass, put into resistance 55 ohm/sq in side's the mixed liquor of sodium acetate, NaOH and isopropyl alcohol, solution temperature is 65 ℃, the mass fraction of sodium acetate is 0.01%, the mass fraction of NaOH is 2.5%, the mass fraction of isopropyl alcohol is to carry out the 600s corrosion in 5.6% the solution, remove heavy doping emitter 2, make the resistance of emitter side, back and be 80ohm/sq, the surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering more successively, obtain the finished product solar battery sheet.The battery sheet of the embodiment of the invention 1 gained battery sheet and prior art is compared, and the result is as follows:
The unit for electrical property parameters of table 1 solar battery sheet
| ? | Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current |
| The technology of the present invention | 4.463 | 0.6361 | 8.868 | 79.11 | 18.34% | 0.075 |
| Prior art | 4.440 | 0.6337 | 8.863 | 79.06 | 18.25% | 0.318 |
Embodiment 2:
Select polysilicon chip; Silicon chip 1 is through conventional cleaning and making herbs into wool, silicon chip 1 is put into diffusion furnace carry out P atom 1 deposition, make 0.3 micron of junction depth, after removing through peripheral etching, phosphorosilicate glass, put into resistance 70 ohm/sq in side's the mixed liquor of sodium acetate, NaOH and isopropyl alcohol, solution temperature is 90 ℃, the mass fraction of sodium acetate is 0.04%, the mass fraction of NaOH is 0.5%, the mass fraction of isopropyl alcohol is to carry out the 120s corrosion in 2.0% the solution, remove heavy doping emitter 2, make the resistance of emitter side, back and be 80ohm/sq, the surface is light dope emitter 3; Make silicon nitride film, silk screen printing, sintering more successively, obtain the finished product solar battery sheet.The battery sheet of the embodiment of the invention 2 gained battery sheets and prior art is compared, and the result is as follows:
The unit for electrical property parameters of table 2 solar battery sheet
| ? | Power | Open circuit voltage | Short circuit current | Fill factor, curve factor | Transformation efficiency | Leakage current |
| The technology of the present invention | 4.206 | 0.6246 | 8.546 | 78.80 | 17.28% | 0.217 |
| Prior art | 4.191 | 0.6231 | 8.540 | 78.76 | 17.22% | 0.423 |
As can be seen, the solar cell that the present invention makes can reduce its dark current from embodiment, improves the open circuit voltage of battery, and can effectively improve the conversion efficiency of solar cell.
Claims (8)
1. have the method for manufacturing solar battery of low surface doping concentration emitter structure, step comprises:
(1) silicon chip after the making herbs into wool is carried out the surface and make emitter;
(2) step (1) gained silicon chip is carried out peripheral etching, phosphorosilicate glass removal;
(3) step (2) gained silicon chip being carried out the high square resistance emitter makes;
(4) step (3) gained silicon chip is carried out successively again silicon nitride film, silk-screen positive and negative electrode and back of the body aluminium, sintering step.
2. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 1 is characterized in that: the emitter junction depth is the 0.1-0.5 micron in the step (1), and side's resistance is 50-75ohm/sq.
3. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 2 is characterized in that: the emitter junction depth is 0.4 micron in the step (1), and side's resistance is 55ohm/sq.
4. the manufacture method of a kind of high square resistance solar cell according to claim 1, it is characterized in that: the high square resistance emitter is silicon chip to be inserted in the mixed liquor of sodium acetate, NaOH and isopropyl alcohol make in the step (3), etching time 60-1000s makes the resistance of emitter side, back and is 70-100ohm/sq.
5. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 4, it is characterized in that: the mixeding liquid temperature of described sodium acetate, NaOH and isopropyl alcohol is 50-100 ℃, the mass fraction of sodium acetate is 0.01-1%, the mass fraction of NaOH is 0.1-10%, and the mass fraction of isopropyl alcohol is 1-20%.
6. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 5, it is characterized in that: the mixeding liquid temperature of described sodium acetate, NaOH and isopropyl alcohol is 65 ℃, the mass fraction of sodium acetate is 0.01%, the mass fraction of NaOH is 2.5%, and the mass fraction of isopropyl alcohol is 5.6%.
7. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 1, it is characterized in that: described silicon chip is monocrystalline silicon, polysilicon or quasi-monocrystalline silicon.
8. the method for manufacturing solar battery with low surface doping concentration emitter structure according to claim 7, it is characterized in that: described silicon chip is preferably and is monocrystalline silicon or quasi-monocrystalline silicon.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338480A (en) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive |
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| CN102612735A (en) * | 2009-10-26 | 2012-07-25 | 新南创新私人有限公司 | Improved metallization method for silicon solar cells |
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| CN102709403A (en) * | 2012-07-04 | 2012-10-03 | 中利腾晖光伏科技有限公司 | Maskless etch-back method applicable to selective emitter solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107338480A (en) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive |
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