CN101916797A - Polysilicon selective emitter solar cell manufacture process - Google Patents
Polysilicon selective emitter solar cell manufacture process Download PDFInfo
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- CN101916797A CN101916797A CN2010102264665A CN201010226466A CN101916797A CN 101916797 A CN101916797 A CN 101916797A CN 2010102264665 A CN2010102264665 A CN 2010102264665A CN 201010226466 A CN201010226466 A CN 201010226466A CN 101916797 A CN101916797 A CN 101916797A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a polysilicon selective emitter solar cell manufacture process, which comprises the steps of: carrying out surface damage removal, etching treatment and diffusion knotting on a polycrystalline silicon wafer; carrying out screen printing on an emitting layer with etching-back blocking slurry according to a metallization pattern area and prebaking; carrying out local wet chemical etching back after phosphorosilicate glass removal is carried out on local wafer with etching-back blocking slurry printed on the metallization area; removing the etching-back blocking slurry; carrying out pn junction isolation while removing the phosphorosilicate glass; depositing an SiNx or SiO2/SiNx film on the surface and carrying out surface passivation; and printing a back surface electrode and an aluminum back surface field to form a front surface metallization electrode, and sintering to form a finished product of the polysilicon selective emitter solar cell. In the invention, a mixed solution of hydrofluoric acid and nitric acid is adopted for etching back, porous silicon is not generated on the surface after etching back, and the surface topography is not changed; and because only one high temperature process is needed, the invention has simple process, high production efficiency and low energy consumption and is applicable to large-scale industrial production.
Description
Technical field:
The present invention relates to a kind of polysilicon selective emitter solar cell manufacture process.
Background technology:
The developing direction of solar cell is low-cost, high efficiency, and selective emitting electrode structure is to be hopeful to realize one of high efficiency method most in the p-n junction crystal-silicon solar cell production technology.
Selectivity diffusion solar cell main feature is a metallized area phosphorus high-concentration dopant, light area phosphorus low concentration doping, purpose is to improve the surface passivation quality under the prerequisite that does not reduce golden half contact quality, reduce surface recombination and emission layer is compound, improve the photo response of blue wave band, improve battery performance.Selectivity diffusion solar cell has good gold half ohmic contact; The dense diffusion region of metallized area junction depth is big, and metal impurities is difficult for entering depletion region formation deep energy level in the sintering process, and reverse leakage is little, the parallel resistance height; The high recombination region that metallizes separates with the light area, and charge carrier is compound low; The light area doping content is low, and short wave response is good, the short-circuit current density height; Laterally field action is obvious before the height knot, helps advantages such as photo-generated carrier collection.
High efficiency selective emitter solar battery method both domestic and external, as the diffusion barrier masking process, etch mask after the oxidation, diffusion back etch areas can form highly doped dark diffusion region, carries out diffuseing to form the second time low-doped shallow diffusion region behind the removal mask.But this complex technical process, the cost height, the multistep heat treatment process has a strong impact on quality of materials, does not meet to make solar cell high efficiency and double requirements cheaply, can't application in large-scale industrialization is produced.
Summary of the invention:
The object of the present invention is to provide a kind of technology simple, the production efficiency height, the technology that is suitable for large-scale industrialization production is simple, and hear rate is low, and the production efficiency height is suitable for large-scale industrialization production.
Technical solution of the present invention is:
A kind of polysilicon selective emitter solar cell manufacture process is characterized in that: comprise the following steps: successively
(1) polysilicon chip is carried out the surface and go damage, making herbs into wool to handle, spread the system knot then;
(2) on emission layer, eat-back and stop slurry and prebake according to the silk screen printing of metallization pattern zone;
(3) above-mentioned metallized area has been printed eat-back local removal of the silicon chip that stops slurry and carry out local wet chemistry behind the phosphorosilicate glass and eat-back;
(4) removal is eat-back and is stopped slurry;
(5) phosphorosilicate glass is removed in the isolation of pn knot simultaneously; Surface deposition SiNx or SiO2/SiNx film carry out surface passivation; Republish backplate, printing aluminium back of the body field forms the front metal polarizing electrode, is sintered into polycrystalline selective emitter solar battery finished product.
Described metallized area has been printed eat-back local removal of the silicon chip that stops slurry and carried out local wet chemistry behind the phosphorosilicate glass and eat-back.
The method of employing 50%-100% alcohol combination of ultrasound deionized water overflow is removed to eat-back and is stopped slurry.
The present invention is eat-back at metallization pattern zone silk-screen and is adopted local wet chemistry etch-back technics after stopping slurry, eat-back back formation metallized area and have higher relatively surperficial phosphorus concentration, the zone has lower surperficial phosphorus concentration between the metallized area, eat-back the mixed liquor that adopts hydrofluoric acid and nitric acid, eat-backing the rear surface does not have the porous silicon generation, and surface topography is constant; Because pyroprocess for once, technology is simple, the production efficiency height, and energy consumption is low, is suitable for large-scale industrialization production.
Description of drawings:
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is the final solar battery structure schematic cross-section of the present invention.
Fig. 2 is the continuous processing step schematic cross-section of structure solar cell shown in Figure 1 to Fig. 6.
Among the figure: 1. polysilicon chip, 2. low phosphorus doped region, 3. high concentration phosphorus doped region, 4. surface passivated membrane, 5. front metal polarizing electrode, 6. back surface field and backplate are 7. eat-back and are stopped slurry.
Embodiment:
A kind of polysilicon selective emitter solar cell that adopts wet chemistry to eat-back as shown in Figure 1, comprise that diffusion system knot forms low phosphorus doped region 2 on polysilicon chip 1 and the silicon chip 1, and the high local concentrations phosphorus doping district 3 below the front-side metallization electrode zone 5.
The solar cell continuous processing step schematic cross-section of employing technology of the present invention such as Fig. 2 are to Fig. 6;
Concrete steps are as described below:
After polysilicon chip goes to damage making herbs into wool (conventional method), diffusion system knot (conventional method) in tubular diffusion furnace, as shown in Figure 2, low phosphorus doped region 2 and high concentration phosphorus doped region 3 are finished in same step diffusion process.On emitter, eat-back and stop slurry and prebake, as shown in Figure 3 according to 5 silk screen printings of front-side metallization graphics field.Above-mentioned metallized area printed eat-back the silicon chip that stops slurry and adopt local removal of room temperature condition to carry out local wet chemistry behind the phosphorosilicate glass and eat-back, eat-back the no porous silicon generation in back, surface topography is constant, as shown in Figure 4.The method of employing 50%-100% alcohol combination of ultrasound deionized water overflow is removed to eat-back and is stopped slurry part 7 under the room temperature, as shown in Figure 5.Phosphoric residue silex glass (conventional method) is removed in the isolation of pn knot simultaneously, and surface deposition SiNx or SiO2/SiNx film carry out surface passivation (conventional method), as shown in Figure 6.The printed back electrode, printing aluminium back of the body field, 3 form front metal polarizing electrodes (conventional method) in the zone, sinter (conventional method) into and are polycrystalline selective emitter solar battery finished product.
Claims (3)
1. a polysilicon selective emitter solar cell manufacture process is characterized in that: comprise the following steps: successively
(1) polysilicon chip is carried out the surface and go damage, making herbs into wool to handle, spread the system knot then;
(2) on emission layer, eat-back and stop slurry and prebake according to the silk screen printing of metallization pattern zone;
(3) above-mentioned metallized area has been printed eat-back local removal of the silicon chip that stops slurry and carry out local wet chemistry behind the phosphorosilicate glass and eat-back;
(4) removal is eat-back and is stopped slurry;
(5) phosphorosilicate glass is removed in the isolation of pn knot simultaneously; Surface deposition SiNx or SiO2/SiNx film carry out surface passivation; Republish backplate, printing aluminium back of the body field forms the front metal polarizing electrode, is sintered into polycrystalline selective emitter solar battery finished product.
2. polysilicon selective emitter solar cell manufacture process according to claim 1 is characterized in that: described metallized area has been printed eat-back local removal of the silicon chip that stops slurry and carried out local wet chemistry behind the phosphorosilicate glass and eat-back.
3. polysilicon selective emitter solar cell manufacture process according to claim 1 and 2 is characterized in that: the method for employing 50%-100% alcohol combination of ultrasound deionized water overflow is removed to eat-back and is stopped slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010102264665A CN101916797A (en) | 2010-07-14 | 2010-07-14 | Polysilicon selective emitter solar cell manufacture process |
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| CN2010102264665A CN101916797A (en) | 2010-07-14 | 2010-07-14 | Polysilicon selective emitter solar cell manufacture process |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709403A (en) * | 2012-07-04 | 2012-10-03 | 中利腾晖光伏科技有限公司 | Maskless etch-back method applicable to selective emitter solar cell |
| CN102709387A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Etching process for selective transmission electrode |
| CN104934500A (en) * | 2015-05-18 | 2015-09-23 | 润峰电力有限公司 | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter |
| RU2662254C1 (en) * | 2017-06-13 | 2018-07-25 | федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный университет имени С.А. Есенина" | Method of manufacture of semiconductor structure containing a p-n junction under porous silicon film for implementation of a photoelectric converter |
| CN108899376A (en) * | 2018-07-03 | 2018-11-27 | 浙江晶科能源有限公司 | A kind of production method of solar battery and its selective emitting electrode structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1732138A2 (en) * | 2005-06-06 | 2006-12-13 | Universität Konstanz | Method for making planar contacts to semiconductor components with decreased deformation, corresponding device and apparatus for making the same |
| EP1890338A1 (en) * | 2006-08-19 | 2008-02-20 | Universität Konstanz | Method of texturing silicon wafer for fabricating solar cells |
| CN101743640A (en) * | 2007-07-26 | 2010-06-16 | 康斯坦茨大学 | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell |
-
2010
- 2010-07-14 CN CN2010102264665A patent/CN101916797A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1732138A2 (en) * | 2005-06-06 | 2006-12-13 | Universität Konstanz | Method for making planar contacts to semiconductor components with decreased deformation, corresponding device and apparatus for making the same |
| EP1890338A1 (en) * | 2006-08-19 | 2008-02-20 | Universität Konstanz | Method of texturing silicon wafer for fabricating solar cells |
| CN101743640A (en) * | 2007-07-26 | 2010-06-16 | 康斯坦茨大学 | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709387A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Etching process for selective transmission electrode |
| CN102709387B (en) * | 2012-05-08 | 2015-06-17 | 常州天合光能有限公司 | Etching process for selective transmission electrode |
| CN102709403A (en) * | 2012-07-04 | 2012-10-03 | 中利腾晖光伏科技有限公司 | Maskless etch-back method applicable to selective emitter solar cell |
| CN102709403B (en) * | 2012-07-04 | 2015-09-09 | 中利腾晖光伏科技有限公司 | Be applicable to selective emitter solar battery without mask etch back process |
| CN104934500A (en) * | 2015-05-18 | 2015-09-23 | 润峰电力有限公司 | Method for preparing back-surface passivation crystalline silicon solar cell with selective emitter |
| RU2662254C1 (en) * | 2017-06-13 | 2018-07-25 | федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный университет имени С.А. Есенина" | Method of manufacture of semiconductor structure containing a p-n junction under porous silicon film for implementation of a photoelectric converter |
| CN108899376A (en) * | 2018-07-03 | 2018-11-27 | 浙江晶科能源有限公司 | A kind of production method of solar battery and its selective emitting electrode structure |
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Application publication date: 20101215 |