CN106449800B - Passivation contact structures of selective polysilicon membrane and preparation method thereof - Google Patents
Passivation contact structures of selective polysilicon membrane and preparation method thereof Download PDFInfo
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- CN106449800B CN106449800B CN201611117510.2A CN201611117510A CN106449800B CN 106449800 B CN106449800 B CN 106449800B CN 201611117510 A CN201611117510 A CN 201611117510A CN 106449800 B CN106449800 B CN 106449800B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 84
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 70
- 239000012528 membrane Substances 0.000 title claims abstract description 67
- 238000002161 passivation Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 7
- 229910003978 SiClx Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000003854 Surface Print Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of passivation contact structures of selective polysilicon membrane, a layer thickness < 2 nm silicon dioxide layer is prepared in surface of crystalline silicon, doped polycrystalline silicon film is prepared in silica layer surface, the doped polycrystalline silicon film has first thickness in no Metal contact regions, there are Metal contact regions that there is second thickness, and first thickness is less than second thickness, forms metal electrode in the second thickness region surface of polysilicon membrane.Meanwhile the invention also discloses a kind of methods of passivation contact structures for preparing above-mentioned selective polysilicon membrane.The present invention enables traditional screen printing technique to be effectively bonded together with passivation contact technique, and contact technique will be passivated by, which being conducive to, pushes volume production to, meanwhile, effectively improve the efficiency of solar cell.
Description
Technical field
The present invention relates to the blunt of a kind of passivation contact structures of solar cell more particularly to a kind of selective polysilicon membrane
Change contact structures and preparation method thereof, belongs to solar cell preparation technical field.
Background technique
In recent years, passivation contact technique has received widespread attention in crystal-silicon solar cell field, wherein Germany is not bright
Grace standing grain expense solar energy system Research Institute goes out the passivation contact solar cell that efficiency reaches 25.1%, and passivation contact uses tunnel
Silicon dioxide layer is worn, and the polysilicon membrane being superimposed upon in tunnelling silicon dioxide layer.The passivation contacts solar cell using true
Empty vapour deposition method prepares metal electrode, can not also be mass produced in a short time.
Summary of the invention
The present invention provides a kind of choosing for the technical issues of in the prior art, passivation contact technique can not be mass produced
Passivation contact structures of selecting property polysilicon membrane and preparation method thereof further increase the efficiency of solar cell, and passivation is contacted
Technology pushes volume production to.
For this purpose, the present invention adopts the following technical scheme:
The passivation contact structures of selective polysilicon membrane are prepared with a layer thickness < 2 nm dioxy in surface of crystalline silicon
SiClx layer prepares doped polycrystalline silicon film in silica layer surface, and the doped polycrystalline silicon film is in no Metal contact regions
With first thickness, there are Metal contact regions that there is second thickness, and first thickness is less than second thickness, in polysilicon membrane
Second thickness region surface formed metal electrode.
Further, the first thickness is 5-2000 nm, and the second thickness is 30-70000 nm.
Another aspect of the present invention provides a kind of preparation method of the passivation contact structures of selective polysilicon membrane, packet
Containing following steps:
S1: Wafer Cleaning:
S2: thermal oxidation technology perhaps hot nitric acid oxidation process or ozonation technology the preparation of Surface Oxygen SiClx: are used
Form thickness < 2 nm silicon dioxide layer；
S3: polysilicon membrane preparation: Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor is used
) or plasma reinforced chemical vapour deposition method (Plasma Enhanced Chemical Vapor Deposition:LPCVD
Deposition:PECVD) deposited polycrystalline silicon thin film, polysilicon membrane with a thickness of 30-70000 nm；
S4: the preparation of polysilicon membrane surface exposure mask: the printing mask on above-mentioned polysilicon membrane；
S5: the etching of polysilicon membrane: the polysilicon membrane thickness of no masked areas is thinned to using the method for etching
5-2000 nm forms first thickness region；
S6: removal mask layer, the polysilicon membrane region that the lower section of mask layer does not etch are second thickness region；
S7: it prepares electrode: the technology of silk-screen printing is used above prepares metal electrode, metal for the polysilicon membrane of etching
Electrode print is on second thickness region.
Further, in step s3, the polysilicon membrane can be doped polycrystalline silicon film in situ, or this
It levies polysilicon membrane and then needs subsequent doping if intrinsic polysilicon film.
Further, in step s 5, the etching technics is in chemical etching, plasma etching or Mechanical lithography
One or more combination.
Further, in the step s 7, the material of the electrode can be silver paste, one kind of aluminium paste, silver-colored aluminium paste, copper slurry
Or multiple combinations.
The invention has the following beneficial effects:
Since most of commercialized crystal-silicon solar cell uses screen printing technique to prepare electrode at present, it will
It is the approach for fast implementing passivation contact process industrialization that screen printing technique and passivation contact technique, which combine,.And current silk screen
The metal of printing, such as silver paste, it is deeper in the sintering depth of silicon face, it is easy to destroy to be passivated contacting film, such as polysilicon membrane,
The effect of passivation contact will be destroyed in this case.The present invention in Metal contact regions and nonmetallic contact area by setting
The polysilicon membrane for counting different-thickness makes the preparation region of metal electrode have thicker polysilicon membrane, effectively prevents
Metal electrode destroys the effect of passivation contact；Traditional screen printing technique is set to be effectively combined with passivation contact technique
Together.On the other hand, since absorption of the polysilicon membrane to light is larger, if its thickness is too thick to will lead to solar cell electric current damage
Lose it is excessive, therefore, the present invention in polysilicon membrane non-metallic regions have relatively thin thickness, can be effectively prevented the sun electricity
The current loss in pond.To sum up, the present invention, which is conducive to that contact technique will be passivated, pushes volume production to, meanwhile, effectively improve solar cell
Efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the flow diagram of 2-4 of the embodiment of the present invention；
In figure, 1 is silicon substrate；2 be silicon dioxide layer；3 be doped polycrystalline silicon film；3a is doped polycrystalline silicon film
First thickness region, 3b are the second thickness regions of doped polycrystalline silicon film；4 be metal electrode.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, present invention is further described in detail, the present invention in prior art phase
Same part will refer to the prior art.
Embodiment 1
As shown in Figure 1, the passivation contact structures of selectivity polysilicon membrane provided by the invention, on the surface of crystalline silicon 1
It is prepared with layer of silicon dioxide layer 2, thickness < 2 nm of silicon dioxide layer 2 prepare doped polycrystalline on the surface of silicon dioxide layer 2
Silicon thin film 3, doped polycrystalline silicon film 3 in different regions there is different thickness specifically to have in no Metal contact regions
First thickness 3a is having Metal contact regions to have second thickness 3b, and first thickness 3a is less than second thickness 3b, first thickness
Range be 5-2000 nm, the range of second thickness is 30-70000 nm；In the second thickness region surface of polysilicon membrane
Form metal electrode 4.
Embodiment 2
As shown in Fig. 2, the preparation method of the passivation contact structures of the selective polysilicon membrane of the present embodiment, comprising as follows
Step:
S1: Wafer Cleaning:
S2: the silicon dioxide layer with a thickness of 1.5 nm the preparation of Surface Oxygen SiClx: is prepared using thermal oxidation technology；
S3: phosphorus doping or boron doped polysilicon membrane preparation: is deposited using Low Pressure Chemical Vapor Deposition (LPCVD)
Polysilicon membrane, the polysilicon membrane with a thickness of 200 nm；
S4: in the polysilicon membrane surface printing exposure mask；
S5: the etching of polysilicon membrane: HF/HNO3 solution etches polysilicon membrane is used, its thickness is made to be reduced to 70
Nm forms first thickness region；
S6: removal mask layer, the polysilicon membrane region that the lower section of mask layer does not etch are second thickness region；
S7: it prepares electrode: the technology of silk-screen printing is used above prepares metal electrode, metal for the polysilicon membrane of etching
For electrode print on second thickness region, metal electrode uses silver electrode.
Embodiment 3
As shown in Fig. 2, the preparation method of the passivation contact structures of the selective polysilicon membrane of the present embodiment, comprising as follows
Step:
S1: Wafer Cleaning:
S2: the silicon dioxide layer with a thickness of 1.3nm the preparation of Surface Oxygen SiClx: is prepared using hot nitric acid process；
S3: phosphorus doping or boron doped polysilicon membrane preparation: is deposited using Low Pressure Chemical Vapor Deposition (LPCVD)
Polysilicon membrane, the polysilicon membrane with a thickness of 100 nm；
S4: in the polysilicon membrane surface printing exposure mask；
S5: the etching of polysilicon membrane: HF/HNO3 solution etches polysilicon membrane is used, its thickness is made to be reduced to 50
Nm forms first thickness region；
S6: removal mask layer, the polysilicon membrane region that the lower section of mask layer does not etch are second thickness region；
S7: it prepares electrode: the technology of silk-screen printing is used above prepares metal electrode, metal for the polysilicon membrane of etching
Electrode print is on second thickness region, and metal electrode is using silver-colored aluminium electrode.
Embodiment 4
As shown in Fig. 2, the preparation method of the passivation contact structures of the selective polysilicon membrane of the present embodiment, comprising as follows
Step:
S1: Wafer Cleaning:
S2: the silicon dioxide layer with a thickness of 1.2nm the preparation of Surface Oxygen SiClx: is prepared using ozonation technology；
S3: polysilicon membrane preparation: using plasma reinforced chemical vapour deposition method (PECVD) deposition phosphorus doping or
Boron doped polysilicon membrane, the polysilicon membrane with a thickness of 100 nm；
S4: in the polysilicon membrane surface printing exposure mask；
S5: the etching of polysilicon membrane: Mechanical lithography method etches polycrystalline silicon thin film is used, its thickness is reduced to
60nm forms first thickness region；
S6: removal mask layer, the polysilicon membrane region that the lower section of mask layer does not etch are second thickness region；
S7: it prepares electrode: the technology of silk-screen printing is used above prepares metal electrode, metal for the polysilicon membrane of etching
For electrode print on second thickness region, metal electrode uses aluminium electrode.
Claims (5)
1. the passivation contact structures of selective polysilicon membrane, are prepared with a layer thickness < 2nm silica in surface of crystalline silicon
Layer, prepares doped polycrystalline silicon film in silica layer surface, the doped polycrystalline silicon film has in no Metal contact regions
First thickness is having Metal contact regions to have second thickness, and first thickness is less than second thickness, the of polysilicon membrane
Two thickness area surfaces form metal electrode, and the first thickness is 5-2000nm, and the second thickness is 30-70000nm.
2. a kind of method for the passivation contact structures for preparing selective polysilicon membrane described in claim 1, includes following step
It is rapid:
SI: Wafer Cleaning；
S2: the preparation of Surface Oxygen SiClx: using thermal oxidation technology, perhaps hot nitric acid oxidation process or ozonation technology are formed
Thickness < 2mn silicon dioxide layer；
S3: it polysilicon membrane preparation: is deposited using Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method
Polysilicon membrane, polysilicon membrane with a thickness of 30-70000nm；
S4: the preparation of polysilicon membrane surface exposure mask: the printing mask on above-mentioned polysilicon membrane；
S5: the polysilicon membrane thickness of no masked areas the etching of polysilicon membrane: is thinned to by 5- using the method for etching
2000nm forms first thickness region；
S6: removal mask layer, the polysilicon membrane region that the lower section of mask layer does not etch are second thickness region；
S7: it makes each electrode: the technology of silk-screen printing is used above prepares metal electrode, metal electrode for the polysilicon membrane of etching
It is printed on second thickness region.
3. preparation method according to claim 2, it is characterised in that: in step s3, the polysilicon membrane can be
Doped polycrystalline silicon film in situ, or intrinsic polysilicon film then needs subsequent doping if intrinsic polysilicon film.
4. preparation method according to claim 2, it is characterised in that: in step s 5, the etching technics is that chemistry is carved
The combination of one or more of erosion, plasma etching or Mechanical lithography.
5. preparation method according to claim 2, it is characterised in that: in the step s 7, the material of the electrode can be
One kind or multiple combinations of silver paste, aluminium paste, silver-colored aluminium paste, copper slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611117510.2A CN106449800B (en) | 2016-12-07 | 2016-12-07 | Passivation contact structures of selective polysilicon membrane and preparation method thereof |
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| CN201611117510.2A CN106449800B (en) | 2016-12-07 | 2016-12-07 | Passivation contact structures of selective polysilicon membrane and preparation method thereof |
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| CN106449800A CN106449800A (en) | 2017-02-22 |
| CN106449800B true CN106449800B (en) | 2019-04-05 |
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| EP4002487A1 (en) * | 2020-11-19 | 2022-05-25 | Jinko Green Energy (Shanghai) Management Co., Ltd | Solar cell and method for producing same |
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| EP4002487A1 (en) * | 2020-11-19 | 2022-05-25 | Jinko Green Energy (Shanghai) Management Co., Ltd | Solar cell and method for producing same |
| EP4099400A1 (en) * | 2020-11-19 | 2022-12-07 | Jinko Green Energy (Shanghai) Management Co., Ltd | Solar cell and method for producing same |
| EP4235816A3 (en) * | 2020-11-19 | 2023-10-25 | Jinko Green Energy (Shanghai) Management Co., Ltd. | Solar cell and method for producing same |
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