CN106449800A - Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof - Google Patents
Passivation contact structure of selective polycrystalline silicon thin film and preparation method thereof Download PDFInfo
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- CN106449800A CN106449800A CN201611117510.2A CN201611117510A CN106449800A CN 106449800 A CN106449800 A CN 106449800A CN 201611117510 A CN201611117510 A CN 201611117510A CN 106449800 A CN106449800 A CN 106449800A
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- polysilicon membrane
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 85
- 238000002161 passivation Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims description 64
- 239000012528 membrane Substances 0.000 claims description 61
- 238000005530 etching Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000006385 ozonation reaction Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000003854 Surface Print Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a passivation contact structure of a selective polycrystalline silicon thin film. A preparation method comprises the following steps: preparing one silicon dioxide layer with the thickness of less than 2nm on the surface of crystalline silicon, preparing a doped polycrystalline silicon thin film on the surface of the silicon dioxide layer, wherein the doped polycrystalline silicon thin film has a first thickness in a nonmetallic contact region and a second thickness in a metallic contact region, and the first thickness is less than the second thickness, and then forming a metal electrode on the surface of the second thickness region of the polycrystalline silicon thin film. Meanwhile, the invention also discloses a method for preparing the passivation contact structure of the selective polycrystalline silicon thin film. The passivation contact structure of the selective polycrystalline silicon thin film has the advantages that the traditional screen printing technology can be effectively combined with a passivation contact technology, the passivation contact technology can be beneficially popularized to mass production, and efficiency of a solar cell is effectively improved.
Description
Technical field
The present invention relates to a kind of passivation contact structures of solar cell, more particularly, to a kind of selectivity polysilicon membrane blunt
Change contact structures and preparation method thereof, belong to solar cell preparing technical field.
Background technology
In recent years, passivation contact technique is of great interest in crystal-silicon solar cell field, and wherein Germany is not bright
Grace standing grain takes solar energy system Research Institute and goes out the passivation contact solar cell that efficiency reaches 25.1%, and its passivation contact adopts tunnel
Wear silicon dioxide layer, and be superimposed upon the polysilicon membrane in tunnelling silicon dioxide layer.This passivation contact solar cell is using true
Empty vapour deposition method prepares metal electrode, in a short time also cannot large-scale production.
Content of the invention
The present invention be directed to prior art in, passivation contact technique cannot large-scale production technical problem, a kind of selectivity is provided
Passivation contact structures of polysilicon membrane and preparation method thereof, improve the efficiency of solar cell further, will be passivated contact technique
Push volume production to.
For this reason, the present invention adopts the following technical scheme that：
The passivation contact structures of selectivity polysilicon membrane, have a layer thickness in surface of crystalline silicon preparation<The silicon dioxide of 2 nm
Layer, prepares doped polycrystalline silicon film in silicon dioxide layer surface, described doped polycrystalline silicon film has in no Metal contact regions
First thickness, there being Metal contact regions to have second thickness, and first thickness is less than second thickness, the of polysilicon membrane
Two thickness area surfaces form metal electrode.
Further, described first thickness is 5-2000 nm, and described second thickness is 30-70000 nm.
Another aspect of the present invention, provides a kind of preparation method of the passivation contact structures of selectivity polysilicon membrane, bag
Containing following steps：
S1：Wafer Cleaning：
S2：Prepared by Surface Oxygen SiClx：Using thermal oxidation technology, or hot nitric acid oxidation process, or ozonation technology is formed
Thickness<The silicon dioxide layer of 2 nm；
S3：Prepared by polysilicon membrane：Using Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor
Deposition:) or plasma reinforced chemical vapour deposition method (Plasma Enhanced Chemical Vapor LPCVD
Deposition:PECVD) deposited polycrystalline silicon thin film, the thickness of polysilicon membrane is 30-70000 nm；
S4：The preparation of polysilicon membrane surface mask：Printing mask on above-mentioned polysilicon membrane；
S5：The etching of polysilicon membrane：The polysilicon membrane thickness of no masked areas is thinned to 5- by the method using etching
2000 nm, form first thickness region；
S6：Remove mask layer, the polysilicon membrane region that the lower section of mask layer does not etch is second thickness region；
S7：Prepare electrode：The technology that polysilicon membrane for etching is used above silk screen printing prepares metal electrode, metal electrode
It is printed on second thickness region.
Further, in step s3, described polysilicon membrane can be original position doped polycrystalline silicon film or basis
Levy polysilicon membrane, if intrinsic polysilicon thin film, then need subsequently to adulterate.
Further, in step s 5, described etching technics is in chemical etching, plasma etching or Mechanical lithography
One or more combinations.
Further, in the step s 7, the material of described electrode can be silver paste, aluminium paste, silver-colored aluminium paste, one kind of copper slurry
Or multiple combination.
The present invention has the advantages that：
Because most of at present business-like crystal-silicon solar cell prepares electrode using screen printing technique, therefore, by silk screen
It is the quick approach realizing passivation contact process industrialization that printing technology and passivation contact technique combine.And current silk screen printing
Metal, such as silver paste, deeper in the sintering depth of silicon face, be easy to destroy passivation contact thin film, such as polysilicon membrane, at this
The effect of passivation contact will be destroyed in the case of kind.The present invention passes through to design not in Metal contact regions and nonmetallic contact area
The polysilicon membrane of stack pile, makes the preparation region of metal electrode have thicker polysilicon membrane, effectively prevent metal
The effect of electrode breakages passivation contact；Traditional screen printing technique is enable to be effectively combined one with passivation contact technique
Rise.On the other hand, because polysilicon membrane is larger to the absorption of light, if its thickness is too thick will lead to solar cell current loss
Excessive, therefore, the polysilicon membrane in the present invention has relatively thin thickness in non-metallic regions, can be effectively prevented solar cell
Current loss.To sum up, the present invention is conducive to pushing passivation contact technique to volume production, meanwhile, effectively improves solar cell
Efficiency.
Brief description
Fig. 1 is the structural representation of the embodiment of the present invention 1；
Fig. 2 is the schematic flow sheet of embodiment of the present invention 2-4；
In figure, 1 is silicon substrate；2 is silicon dioxide layer；3 is doped polycrystalline silicon film；3a is the first of doped polycrystalline silicon film
Thickness area, 3b is the second thickness region of doped polycrystalline silicon film；4 is metal electrode.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail, with prior art phase in the present invention
Same part will be with reference to prior art.
Embodiment 1
As shown in figure 1, the passivation contact structures of the selectivity polysilicon membrane of present invention offer, in the preparation of the surface of crystalline silicon 1
There are layer of silicon dioxide layer 2, the thickness of silicon dioxide layer 2<2 nm, prepare DOPOS doped polycrystalline silicon on the surface of silicon dioxide layer 2 thin
Film 3, doped polycrystalline silicon film 3 has different thickness in different regions, specifically, has first in no Metal contact regions
Thickness 3a, there being Metal contact regions to have second thickness 3b, and first thickness 3a is less than second thickness 3b, the model of first thickness
Enclose for 5-2000 nm, the scope of second thickness is 30-70000 nm；Formed in the second thickness region surface of polysilicon membrane
Metal electrode 4.
Embodiment 2
As shown in Fig. 2 the preparation method of the passivation contact structures of the selectivity polysilicon membrane of the present embodiment, comprise to walk as follows
Suddenly：
S1：Wafer Cleaning：
S2：Prepared by Surface Oxygen SiClx：The silicon dioxide layer that thickness is 1.5 nm is prepared using thermal oxidation technology；
S3：Prepared by polysilicon membrane：Phosphorus doping or boron doped polycrystalline are deposited using Low Pressure Chemical Vapor Deposition (LPCVD)
Silicon thin film, the thickness of this polysilicon membrane is 200 nm；
S4：In this polysilicon membrane surface printing mask；
S5：The etching of polysilicon membrane：Using HF/HNO3 solution etches polysilicon membrane so as to thickness is reduced to 70 nm, shape
Become first thickness region；
S6：Remove mask layer, the polysilicon membrane region that the lower section of mask layer does not etch is second thickness region；
S7：Prepare electrode：The technology that polysilicon membrane for etching is used above silk screen printing prepares metal electrode, metal electrode
It is printed on second thickness region, metal electrode adopts silver electrode.
Embodiment 3
As shown in Fig. 2 the preparation method of the passivation contact structures of the selectivity polysilicon membrane of the present embodiment, comprise to walk as follows
Suddenly：
S1：Wafer Cleaning：
S2：Prepared by Surface Oxygen SiClx：The silicon dioxide layer that thickness is 1.3nm is prepared using hot nitric acid process；
S3：Prepared by polysilicon membrane：Phosphorus doping or boron doped polycrystalline are deposited using Low Pressure Chemical Vapor Deposition (LPCVD)
Silicon thin film, the thickness of this polysilicon membrane is 100 nm；
S4：In this polysilicon membrane surface printing mask；
S5：The etching of polysilicon membrane：Using HF/HNO3 solution etches polysilicon membrane so as to thickness is reduced to 50 nm, shape
Become first thickness region；
S6：Remove mask layer, the polysilicon membrane region that the lower section of mask layer does not etch is second thickness region；
S7：Prepare electrode：The technology that polysilicon membrane for etching is used above silk screen printing prepares metal electrode, metal electrode
It is printed on second thickness region, metal electrode is using silver-colored aluminium electrode.
Embodiment 4
As shown in Fig. 2 the preparation method of the passivation contact structures of the selectivity polysilicon membrane of the present embodiment, comprise to walk as follows
Suddenly：
S1：Wafer Cleaning：
S2：Prepared by Surface Oxygen SiClx：The silicon dioxide layer that thickness is 1.2nm is prepared using ozonation technology；
S3：Prepared by polysilicon membrane：Phosphorus doping is deposited using plasma reinforced chemical vapour deposition method (PECVD) or boron is mixed
Miscellaneous polysilicon membrane, the thickness of this polysilicon membrane is 100 nm；
S4：In this polysilicon membrane surface printing mask；
S5：The etching of polysilicon membrane：Using Mechanical lithography method etches polycrystalline silicon thin film so as to thickness is reduced to 60nm, shape
Become first thickness region；
S6：Remove mask layer, the polysilicon membrane region that the lower section of mask layer does not etch is second thickness region；
S7：Prepare electrode：The technology that polysilicon membrane for etching is used above silk screen printing prepares metal electrode, metal electrode
It is printed on second thickness region, metal electrode adopts aluminium electrode.
Claims (6)
1. the passivation contact structures of selectivity polysilicon membrane, have a layer thickness in surface of crystalline silicon preparation<The titanium dioxide of 2 nm
Silicon layer, prepares doped polycrystalline silicon film in silicon dioxide layer surface, and described doped polycrystalline silicon film has in no Metal contact regions
There is first thickness, there being Metal contact regions to have second thickness, and first thickness is less than second thickness, in polysilicon membrane
Second thickness region surface forms metal electrode.
2. selectivity polysilicon membrane according to claim 1 passivation contact structures it is characterised in that：Described first is thick
Spend for 5-2000 nm, described second thickness is 30-70000 nm.
3. a kind of method of the passivation contact structures preparing the arbitrary described selectivity polysilicon membrane of claim 1-2, comprises
Following steps：
S1：Wafer Cleaning：
S2：Prepared by Surface Oxygen SiClx：Using thermal oxidation technology, or hot nitric acid oxidation process, or ozonation technology is formed
Thickness<The silicon dioxide layer of 2 nm；
S3：Prepared by polysilicon membrane：Using Low Pressure Chemical Vapor Deposition (Low Pressure Chemical Vapor
Deposition:) or plasma reinforced chemical vapour deposition method (Plasma Enhanced Chemical Vapor LPCVD
Deposition:PECVD) deposited polycrystalline silicon thin film, the thickness of polysilicon membrane is 30-70000 nm；
S4：The preparation of polysilicon membrane surface mask：Printing mask on above-mentioned polysilicon membrane；
S5：The etching of polysilicon membrane：The polysilicon membrane thickness of no masked areas is thinned to 5- by the method using etching
2000 nm, form first thickness region；
S6：Remove mask layer, the polysilicon membrane region that the lower section of mask layer does not etch is second thickness region；
S7：Prepare electrode：The technology that polysilicon membrane for etching is used above silk screen printing prepares metal electrode, metal electrode
It is printed on second thickness region.
4. preparation method according to claim 3 it is characterised in that：In step s3, described polysilicon membrane can be
Original position doped polycrystalline silicon film or intrinsic polysilicon thin film, if intrinsic polysilicon thin film, then need subsequently to adulterate.
5. preparation method according to claim 3 it is characterised in that：In step s 5, described etching technics is that chemistry is carved
One of erosion, plasma etching or Mechanical lithography or multiple combination.
6. preparation method according to claim 3 it is characterised in that：In the step s 7, the material of described electrode can be
Or silver paste, aluminium paste, silver-colored aluminium paste, one kind multiple combination of copper slurry.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611117510.2A CN106449800B (en) | 2016-12-07 | 2016-12-07 | Passivation contact structures of selective polysilicon membrane and preparation method thereof |
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| CN201611117510.2A CN106449800B (en) | 2016-12-07 | 2016-12-07 | Passivation contact structures of selective polysilicon membrane and preparation method thereof |
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| CN107275432A (en) * | 2017-08-04 | 2017-10-20 | 常州天合光能有限公司 | A kind of crystal silicon solar energy battery and preparation method thereof |
| CN107331733A (en) * | 2017-08-02 | 2017-11-07 | 浙江晶科能源有限公司 | A kind of preparation method of one side polysilicon |
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| CN108447918A (en) * | 2018-03-29 | 2018-08-24 | 晶澳（扬州）太阳能科技有限公司 | A kind of doped structure and preparation method thereof of passivation contact polysilicon membrane |
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| CN109713082A (en) * | 2018-12-29 | 2019-05-03 | 浙江晶科能源有限公司 | The passivating method of polycrystalline silicon membrane in a kind of solar cell |
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| CN110098279A (en) * | 2018-01-30 | 2019-08-06 | 上海凯世通半导体股份有限公司 | The production method of solar battery |
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| CN110838528A (en) * | 2019-10-29 | 2020-02-25 | 协鑫集成科技股份有限公司 | Post-doped N-type contact passivation battery |
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| CN112786738A (en) * | 2021-01-28 | 2021-05-11 | 晶澳太阳能有限公司 | Solar cell and preparation method thereof |
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| CN114709294A (en) * | 2022-05-31 | 2022-07-05 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| US11450775B2 (en) | 2020-11-19 | 2022-09-20 | Jinko Green Energy (shanghai) Management Co., Ltd. | Solar cell and method for producing same |
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| WO2023284771A1 (en) * | 2021-07-14 | 2023-01-19 | 天合光能股份有限公司 | Selective passivated contact cell and preparation method therefor |
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