CN108987505A - A kind of solar battery and preparation method thereof - Google Patents
A kind of solar battery and preparation method thereof Download PDFInfo
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- CN108987505A CN108987505A CN201810855742.0A CN201810855742A CN108987505A CN 108987505 A CN108987505 A CN 108987505A CN 201810855742 A CN201810855742 A CN 201810855742A CN 108987505 A CN108987505 A CN 108987505A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 111
- 238000002161 passivation Methods 0.000 claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229920005591 polysilicon Polymers 0.000 claims abstract description 72
- 239000012528 membrane Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
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- 239000010408 film Substances 0.000 claims description 48
- 230000012010 growth Effects 0.000 claims description 28
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052698 phosphorus Inorganic materials 0.000 claims description 24
- 239000011574 phosphorus Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
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- 239000010936 titanium Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 130
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 238000005468 ion implantation Methods 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 238000005234 chemical deposition Methods 0.000 description 13
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- 238000010438 heat treatment Methods 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 238000006385 ozonation reaction Methods 0.000 description 1
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of solar batteries, including silicon substrate, selective doping region is equipped in the silicon substrate, the selective doping region includes doped region and undoped region, the surface in the selective doping region is equipped with passivation dielectric layer, the passivation dielectric layer is equipped with polysilicon membrane, and Metal contact electrode is equipped on the polysilicon membrane and at position corresponding with the doped region.The battery is adulterated by the part that the silicon substrate to metal contact lower section carries out selectivity, can effectively reduce the problem of damage of the Metal contact regions to ultra-thin passivation dielectric layer, can more bring into play its electric property.The invention also discloses the preparation methods of above-mentioned solar battery.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of solar battery and preparation method thereof.
Background technique
For crystal silicon solar energy battery to obtain high efficiency, crystalline silicon matrix surface must have good passivation that will lack
The recombination-rate surface of number carriers is controlled to minimum, higher opens pressure, electric current and fill factor to obtain.Silicon face passivation
Conventional means mainly using the single-layer or multi-layers dielectric-coating structure such as silica, silicon nitride, silicon oxynitride, aluminium oxide pass through by
The dangling bonds concentration on silicon substrate surface reduces to inhibit recombination-rate surface.But in order to draw electric current, metal electrode is necessary
It is contacted across passivation dielectric film with silicon substrate surface, passivating film can not cause minority carrier to avoid ground by partial destruction at this time
In the compound of Metal contact regions, the open-circuit voltage of battery is dragged down.Therefore, under conditions of the electric current for not influencing battery exports
It is one of the fundamental means for improving crystal silicon solar energy battery transfer efficiency that metal contact area, which is minimized,.
In recent years, passivation contact was gradually carried out application in crystal-silicon solar cell field, basic skills be by
Passivation is separated with electrical contact, grows one layer of ultra-thin oxide layer using at the back side of silicon substrate, and one layer is prepared in oxide layer
Buffer layer of the polysilicon membrane of doping as metal electrical contact, using tunnel-effect electronics pass through super thin oxide layer enter it is heavily doped
Then miscellaneous polysilicon membrane is collected into external circuit by metal electrode, still, large-scale industrial production all uses silk-screen printing silver paste
Or silver-colored aluminum slurry, then metal electrical contact is realized by the method for high temperature sintering.In high-temperature sintering process, metal paste can be worn
Saturating polysilicon membrane is damaged to a certain extent effect to the oxide layer between silicon substrate and polysilicon membrane, and effect is passivated to it
Tab phenolphthaleinum causes certain influence, and open-circuit voltage is caused to reduce.
Technical solution disclosed in patent document CN205564789U, CN205564790U, CN205564764U etc. is
The preparation passivation contact structures on undoped silicon substrate, after printing-sintering metal electrode, the open-circuit voltage of actual measurement (open by electrode
Road voltage, Terminal Voc) it is 5mV~10mV lower than virtual open-circuit voltage (junction voltage, Implied Voc), and solar energy
The transformation efficiency of battery is also affected.
Summary of the invention
The first purpose of this invention is to provide a kind of solar battery, which passes through to below Metal contact electrode
Silicon substrate carry out selectivity part doping, can effectively reduce Metal contact electrode region to passivation dielectric layer (usually
For ultra-thin passivation dielectric layer) damage, so as to improve its electric property.
Second object of the present invention, which also resides in, provides the preparation method of above-mentioned passivation contact solar cell, this method energy
Above-mentioned solar battery is enough prepared, and due to good therefore at low cost with prior art compatibility.
Above-mentioned first purpose of the invention is achieved through the following technical solutions: a kind of solar battery, including
Silicon substrate, is equipped with selective doping region in the silicon substrate, and the selective doping region includes doped region and undoped
Region, the surface in the selective doping region are equipped with passivation dielectric layer, and the passivation dielectric layer is equipped with polysilicon membrane,
Metal contact electrode is equipped on the polysilicon membrane and at position corresponding with the doped region.
The present invention passes through the shape of the Metal contact electrode and silicon substrate local doped region domain that will be used for derived current
It is completely corresponding, while guaranteeing not having the possibility that metal is contacted with silicon substrate on undoped region.Therefore, even if high temperature sintering has
May cause metal to damage ultra-thin passivation dielectric layer, will not open-circuit voltage, fill factor and transfer efficiency to battery make
At too much influence.
Preferably, the polysilicon membrane is doped polycrystalline silicon film, in the doped region and doped polycrystalline silicon film
Doped chemical it is identical, the doped chemical be boron or phosphorus.
Preferably, the doping concentration of doped chemical is 1.0E in the doped region18atoms/cm3~1.0E20atoms/
cm3, doping depth is 0.1~2 μm.
As a preferred embodiment of the present invention, the doped region and undoped region alternate and are distributed in
In the silicon substrate.
Preferably, the passivation dielectric layer is silica SiO2, titanium dioxide TiO2With silicon oxynitride SiOxN1-xIn one
Kind monofilm or several stack membranes.
Preferably, the passivation dielectric layer with a thickness of 0.5nm~2.5nm.
Preferably, the polysilicon membrane (Poly-Si) with a thickness of 5nm~500nm.
Herein, the polysilicon membrane of doping can conduction do metal contact.
Further, passivation layer is additionally provided on the polysilicon membrane, the Metal contact electrode is located at the passivation layer
It is upper and at the doped region opposite position.
Preferably, the passivation layer is silicon nitride film.
In its deposition process, passivation layer can further be passivated polysilicon membrane and silicon substrate surface, improve entire blunt
Change the performance of contact.
The passivation contact formed using aforesaid way can be located at the front of the solar battery, can also be located at described
The back side of solar battery.
Above-mentioned second purpose of the invention is achieved through the following technical solutions: one kind of above-mentioned solar battery
Preferred preparation method, comprising the following steps:
S1, silicon substrate is chosen, ion implanting or local laser is carried out to the selective doping region on silicon substrate after cleaning
Doping forms doped region and undoped region；
After S2, cleaning, passivation dielectric layer is prepared on the surface in selective doping region；
S3, the deposited polycrystalline silicon thin film on the surface of passivation dielectric layer；
S4, it is doped and anneals on polysilicon membrane surface, form doped polycrystalline silicon film；
In the oxide layer of doped polycrystalline silicon film surface growth after S5, removal annealing；
S6, setting Metal contact electrode at the doped region position is corresponded on doped polycrystalline silicon film surface.
Further, step S6 has additional passivation layer on doped polycrystalline silicon film surface, corresponding in passivation layer surface
Metal contact electrode is set at the doped region position.
The preferred preparation method of another of above-mentioned solar battery, comprising the following steps:
S1, silicon substrate is chosen, ion implanting, annealing activation note is carried out to the selective doping region on silicon substrate after cleaning
Enter atoms at suitable temperatures doping, forms doped region and undoped region；
S2, the oxide layer for removing surface, prepare passivation dielectric layer on the surface in selective doping region；
S3, the deposited polycrystalline silicon thin film on the surface of passivation dielectric layer；
S4, it is doped and anneals on polysilicon membrane surface, form doped polycrystalline silicon film；
In the oxide layer of doped polycrystalline silicon film surface growth after S5, removal annealing；
S6, setting Metal contact electrode at the doped region position is corresponded on doped polycrystalline silicon film surface.
Further, step S6 has additional passivation layer on doped polycrystalline silicon film surface, corresponding in passivation layer surface
Metal contact electrode is set at the doped region position.
Foreign atom in step S1 is just able to achieve so-called true doping after must requiring high annealing heat treatment, and
Here after ion implantation, after first once being annealed, at this moment the doped layer is just realized and is really adulterated, and is not had after direct ion injection
Have and anneal immediately, there is no really doping is realized, the subsequent doping also needed to polysilicon carries out annealing heat-treatment, right in this way
The doping being lightly doped before is redistributed again, realizes lower surface concentration and deeper junction depth, such effect meeting
More preferably.
I.e. the present invention needs to carry out high annealing to the foreign atom after ion implanting to be just able to achieve doping, such as step (1)
Doping can be realized by high annealing immediately after intermediate ion injection, it can also be high together after the doping of subsequent polysilicon membrane
Temperature annealing, while realizing the doping being lightly doped with the polysilicon membrane in step (4) in step (1), while when high annealing,
It will form oxide layer, before carrying out next step, need to remove.
In the preparation method of above-mentioned solar battery:
Preferably, selective local doping is preferably carried out on silicon substrate surface using ion implantation in step S1, it can also
To realize selective local doping using local laser doping method.
Using ion implantation when silicon substrate carries out the part doping of selectivity, ion implantation apparatus itself can use certainly
The mask plate (mask) of band is once injected, and realizes the doping of regional area.
Using ion implantation when silicon substrate carries out the part doping of selectivity, it can also be and prepared in non-metallic regions
Exposure mask (mask) such as silica of part, is once injected, then exposure mask is removed.
When being adulterated using local laser, preferably first grown on silicon substrate surface using low pressure gas phase deposition (APCVD) equipment
One layer of phosphorosilicate glass (PSG) or Pyrex (BSG)；Laser scanning is recycled to carry out the phosphorus (P) or boron of selectivity to silicon substrate
(B) it adulterates.
Step S2 using low temperature boiler tube oxidation technology, nitric acid oxidation process, ozonation technology, ALD, CVD (such as PECVD,
LPCVD) ultra-thin passivation dielectric layer is prepared on the surface of silicon wafer after cleaning.
Low Pressure Chemical Vapor Deposition (LPCVD) or plasma are preferably used in step S3 on the surface of passivation dielectric layer
Enhance chemical vapour deposition technique (PECVD) deposited polycrystalline silicon thin film.
Doped polycrystalline silicon film is preferably realized using ion implantation in step S4.
It will preferably be removed after annealing in the oxide layer of polysilicon membrane layer surface growth using chemical solutions such as HF in step S5
It goes.
Preferably using tubular type or board-like plasma reinforced chemical vapour deposition method (PECVD) in polysilicon membrane in step S6
Layer surface deposited silicon nitride layer.
Metal contact electrode is preferably arranged in the top of silicon substrate doped region using screen printing mode in step S6.
Compared with prior art, the present invention has the advantage that
(1) present invention is to silicon substrate using local doped structure, and doping concentration can be lower, and doped chemical and more
The doped chemical of polycrystal silicon film can be identical, the silicon substrate locally doping passivation contact battery can using only to metal electrode
The silicon substrate of contact lower section carries out selective local doping, can effectively prevent Ag etc. as the invasion of the metallic element of electrode,
Damage of the metal contact to the damage of ultra-thin passivation dielectric layer and to whole passivating structure is significantly reduced, battery is improved
Virtual fill factor PFF, also reduce metal composite rate, while also reducing the whole electricity of silicon substrate to a certain extent
Resistance, therefore open-circuit voltage, fill factor and transfer efficiency can be improved；
(2) the passivation contact structures in the present invention are capable of providing superior field passivation and surface passivation, and carrier can
To reach metal electrode by selectively tunnelling layer etc., thus open-circuit voltage with higher, fill factor and turn
Change efficiency.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.
Fig. 1 is the structural schematic diagram of solar battery in embodiment 1；
Fig. 2 is the structural schematic diagram of solar battery in embodiment 2-6；
Fig. 3 be embodiment 2, in 4-5 the preparation method of solar battery flow chart；
Fig. 4 is the ion implanting schematic diagram that exposure mask is had in embodiment 2 and embodiment 4；
Fig. 5 is the body dopant distribution schematic diagram in embodiment 2 and embodiment 4 below ultra-thin passivation dielectric layer；
Fig. 6 is the phosphorus doping ECV curve of 2 matrix different zones of embodiment；
Fig. 7 is the flow chart of the preparation method of the solar battery in embodiment 3；
Appended drawing reference in figure respectively indicates:
1, silicon substrate；
2, selective doping region；
21, doped region；
22, undoped region；
3, passivation dielectric layer；
4, polysilicon membrane；
5, Metal contact electrode；
6, passivation layer.
Specific embodiment
Embodiment 1
As shown in Figure 1, solar battery provided in this embodiment, including silicon substrate 1, selectivity is equipped in silicon substrate 1 and is mixed
Miscellaneous region 2, selective doping region 2 include doped region 21 and undoped region 22, are set on the surface in selective doping region 2
There is passivation dielectric layer 3, passivation dielectric layer 3 is equipped with polysilicon membrane 4, on polysilicon membrane 4 and right with doped region 21
Metal contact electrode 5 is equipped at the position answered.
Polysilicon membrane 4 is doped polycrystalline silicon film, the doped chemical phase in doped region 21 and doped polycrystalline silicon film
Together, doped chemical is phosphorus.
The doping concentration of doped chemical is 1.0E in doped region 2118atoms/cm3~1.0E20atoms/cm3, doping is deeply
Degree is 0.1~2 μm.
Doped region 21 and undoped region 22, which alternate, to be distributed in the silicon substrate 1.
Passivation dielectric layer 3 is silica, with a thickness of 1.5nm.
Polysilicon membrane 4 with a thickness of 100nm.
Passivation contact is located at the back side of solar battery.
The preparation method of the solar battery, this method are ultra-thin blunt based on one layer of low pressure chemical deposition (LPCVD) preparation
Change dielectric layer (SiO2), the regioselectivity doping of silicon substrate and the layer polysilicon film doping above it carry out ion implanting phosphorus
(P)。
The preparation method of the solar battery, specifically includes the following steps:
A, after cleaning to silicon wafer, the mask plate (mask) carried using ion implantation apparatus itself is disposably infused
Enter, phosphorus (P) dopant dose is 1E15atoms/cm2；
B, low pressure chemical deposition (LPCVD) passivation dielectric layer: using growth in situ in low pressure chemical deposition (LPCVD) equipment
3 (the SiO of passivation dielectric layer of 1.5nm2)；
C, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer 3, in same equipment
In, it is 620 DEG C of growths, one layer of 100nm polysilicon membrane 4 in temperature；
D, phosphorus (P) injection, dopant dose 4E polysilicon doping: are carried out using ion implantation apparatus15atoms/cm2；
E, it anneals: doping phosphorus (P) being activated using 850 DEG C of temperature, forms doped polycrystalline silicon film, while this high temperature
It also achieves and crystallization and thermal treatment has been carried out to the polysilicon membrane of LPCVD growth, further promote the performance of the film；
F, oxide layer removes: will be removed after annealing in the oxidation of doped polycrystalline silicon film surface growth by HF chemical solution
It goes；
G, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on the doping of silicon substrate
On the doped polycrystalline silicon film of overlying regions, i.e., setting metal at doped region position is corresponded on doped polycrystalline silicon film surface
Contact electrode.
Embodiment 2
As shown in Fig. 2, solar battery provided in this embodiment, including silicon substrate 1, selectivity is equipped in silicon substrate 1 and is mixed
Miscellaneous region 2, selective doping region 2 include doped region 21 and undoped region 22, are set on the surface in selective doping region 2
There is passivation dielectric layer 3, passivation dielectric layer 3 is equipped with polysilicon membrane 4, passivation layer 6 is additionally provided on polysilicon membrane 4, blunt
Change on layer 6 and is equipped with Metal contact electrode 5 at position corresponding with doped region 21.
Polysilicon membrane 4 is doped polycrystalline silicon film, the doped chemical phase in doped region 21 and doped polycrystalline silicon film
Together, doped chemical is phosphorus.
The doping concentration of doped chemical is 1.0E in doped region 2118atoms/cm3~1.0E20atoms/cm3, doping is deeply
Degree is 0.1~2 μm.
Doped region 21 and undoped region 22 alternate and are distributed parallelly in silicon substrate 1.
Passivation dielectric layer 3 is silica, with a thickness of 1.5nm.
Polysilicon membrane 4 with a thickness of 100nm.
Passivation contact is located at the back side of solar battery.
The preparation method of the solar battery, this method are ultra-thin blunt based on one layer of low pressure chemical deposition (LPCVD) preparation
Change dielectric layer (SiO2), the regioselectivity doping of silicon substrate and the layer polysilicon film doping above it carry out ion implanting phosphorus
(P)。
As shown in figure 3, the preparation method of the solar battery, specifically includes the following steps:
A, after being cleaned to silicon wafer, as shown in figure 4, primary using the mask plate (mask) that ion implantation apparatus itself carries
Property injected, phosphorus (P) dopant dose be 1E15atoms/cm2, the distribution of shapes figure entirely injected is as shown in Figure 5；
B, low pressure chemical deposition (LPCVD) passivation dielectric layer: using growth in situ in low pressure chemical deposition (LPCVD) equipment
Passivation dielectric layer (the SiO of 1.5nm2)；
C, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer, in same equipment
In, it is 620 DEG C of growths, one layer of 100nm polysilicon membrane in temperature；
D, phosphorus (P) injection, dopant dose 4E polysilicon doping: are carried out using ion implantation apparatus15atoms/cm2；
E, it anneals: doping phosphorus (P) being activated using 850 DEG C of temperature, form doped polycrystalline silicon film, the dense region of height
Phosphorus doping ECV curve as shown in fig. 6, simultaneously this high temperature also achieve to LPCVD growth polysilicon membrane carried out crystallization
Heat treatment, further promotes the performance of the film；
F, oxide layer removes: will be removed after annealing in the oxidation of doped polycrystalline silicon film surface growth by HF chemical solution
It goes；
G, passivation layer is prepared: by board-like plasma reinforced chemical vapour deposition method (PECVD) in doped polycrystalline silicon film
One layer of 80nm passivation layer (silicon nitride layer) of upper regrowth；
H, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on the doping of silicon substrate
On the passivation layer (silicon nitride layer) of overlying regions, i.e., Metal contact electrode be located on passivation layer and with doped region opposite position
Place.
Comparative example 1
Compared with the structure of the solar battery of embodiment 1, difference only exists the structure of the solar battery of comparative example 1
In not comprising doped region 21 in the structure of the solar battery of comparative example 1.
The preparation method of comparative example and the difference of the preparation method of embodiment 1 are only that, do not include step A.
The solar cell properties parameter of embodiment 1 and comparative example 1 is measured, as a result as shown in table 1 below.Wherein need
It is noted that the data of comparative example 1 and embodiment in table 1 are relativity, i.e., it is basic data, comparison with comparative example 1
The data of example 1 are uniformly set to 0.
The comparison of the various performance parameters of 1 comparative example of table and embodiment 1
| Battery structure | Open-circuit voltage Voc (mV) | Fill factor FF (%) | Transfer efficiency Eff. (%) |
| Comparative example 1 | 0.00 | 0.00 | 0.00 |
| Embodiment 1 | 0.900 | 0.21 | 0.10 |
As it can be seen from table 1 being opened compared with the solar battery of comparative example 1 using the solar battery in embodiment 1
Road voltage, fill factor, transfer efficiency are promoted.The reason is that because the introducing of doped region 21, changes solar energy
The field distribution form of cell matrix is conducive to doped region 21 and generates concentration effect to electric field in advance, so that itself and gold
Belong to contact electrode 5 and forms be more good matching.
Embodiment 3
The structural reference embodiment 2 of the solar battery of the present embodiment.
The preparation method of the solar battery, this method are to prepare one layer of super thin oxide layer (SiO based on chemical oxidation2),
The doping of silicon substrate below is to inject after annealing by phosphorus to realize, entire processing step need respectively to silicon substrate with it is more
Polycrystal silicon film doping is annealed respectively.
As shown in fig. 7, the preparation method of the solar battery, specifically includes the following steps:
A, silicon substrate 1 is chosen, after cleaning, the mask plate (mask) carried using ion implantation apparatus itself is disposably infused
Enter, phosphorus (P) dopant dose is 1E15atoms/cm2；
B, it anneals: furnace anneal activation being carried out to doping phosphorus (P) using 900 DEG C of temperature, formation doped region 21 and non-mix
Miscellaneous region 22；
C, low temperature boiler tube growth of passivation dielectric layer: after the oxide layer for removing above-mentioned annealing process growth, using chemicals
Nitric acid oxidation grows the silica of one layer of 1.0nm；
D, it prepares polysilicon membrane: depositing one layer in 630 DEG C of plasma reinforced chemical vapour deposition method (PECVD) equipment
70nm polysilicon membrane；
E, phosphorus (P) injection, dopant dose 3E polysilicon doping: are carried out using ion implantation apparatus15atoms/cm2；
F, it anneals: doping phosphorus (P) being activated using 875 DEG C of temperature, while this high temperature is also achieved and grown to LPCVD
Polysilicon membrane carried out crystallization and thermal treatment, further promote the performance of the film；
G, oxide layer removes: will be removed after annealing in the oxidation of polysilicon surface growth by HF chemical solution；
H, prepare passivation layer: by tubular type plasma reinforced chemical vapour deposition method (PECVD) on polysilicon membrane again
Grow one layer of 70nm passivation layer (silicon nitride layer)；
I, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on the doping of silicon substrate
On the passivation layer (silicon nitride layer) of overlying regions, i.e., Metal contact electrode be located on passivation layer and with doped region opposite position
Place.
Embodiment 4
The structural reference embodiment 2 of solar battery in the present embodiment.
Unlike the first embodiment:
Doped region 21 is identical with the doped chemical in doped polycrystalline silicon film, and doped chemical is boron.
Passivation dielectric layer 3 is ultrathin silicon oxynitride, with a thickness of 1.8nm.
Polysilicon membrane 4 with a thickness of 120nm.
The boron implantation dosage of silicon substrate is 5E14atoms/cm2, the boron doping dosage of polysilicon membrane is 3E15atoms/
cm2。
The preparation method of the solar battery, this method are to prepare one layer of ultra-thin nitrogen based on low pressure chemical deposition (LPCVD)
Silica (SiOxN1-x), the regioselectivity doping of silicon substrate and the layer polysilicon film doping above it carry out ion implanting
Boron (B).
As shown in figure 3, the preparation method for the passivation contact solar cell that the matrix locally adulterates, comprising the following steps:
A, after being cleaned to silicon wafer, as shown in figure 4, primary using the mask plate (mask) that ion implantation apparatus itself carries
Property injected, boron (B) dopant dose be 5E14atoms/cm2, the distribution of shapes figure entirely injected is as shown in Figure 5；
B, low pressure chemical deposition (LPCVD) oxide layer: using growth in situ in low pressure chemical deposition (LPCVD) equipment
Ultrathin silicon oxynitride (the SiO of 1.8nmxN1-x)；
C, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer, in same equipment
In, it is 610 DEG C of growths, one layer of 120nm polysilicon membrane in temperature；
D, boron (B) injection, dopant dose 3E polysilicon doping: are carried out using ion implantation apparatus15atoms/cm2；
E, it anneals: doping boron (B) being activated using 1050 DEG C of temperature, while this high temperature is also achieved to LPCVD life
Long polysilicon membrane carries out crystallization and thermal treatment, further promotes the performance of the film；
F, oxide layer removes: will be removed after annealing in the oxidation of polysilicon surface growth by HF chemical solution；
G, prepare passivation layer: by tubular type plasma reinforced chemical vapour deposition method (PECVD) on polysilicon membrane again
Grow one layer of 80nm passivation layer (silicon nitride layer)；
H, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on the doping of silicon substrate
On the passivation layer (silicon nitride layer) of overlying regions, i.e., Metal contact electrode be located on passivation layer and with doped region opposite position
Place.
Embodiment 5
The structural reference embodiment 2 of solar battery in the present embodiment.
Unlike the first embodiment:
Local doped region domain 21 is identical with the doped chemical in doped polycrystalline silicon film 4, and doped chemical is boron.
Passivation dielectric layer 3 is ultra-thin silica (SiO2) and titanium oxide (TiO2) stack membrane, with a thickness of 1.0nm.
Polysilicon membrane 4 with a thickness of 120nm.
The boron implantation dosage of silicon substrate 1 is 8E14atoms/cm2。
The preparation method of the solar battery, this method are to prepare one layer of ultra-thin silica based on atomic deposition (ALD)
(SiO2) and titanium dioxide (TiO2) stack membrane, silicon substrate regioselectivity doping and its above layer polysilicon film mixes
Miscellaneous progress boron ion implantation (B).
As shown in figure 3, the matrix locally adulterates the preparation method of passivation contact solar cell, comprising the following steps:
A, after cleaning to silicon wafer, the mask plate (mask) carried using ion implantation apparatus itself is disposably infused
Enter, boron (B) dopant dose is 8E14atoms/cm2；
B, atomic deposition (ALD) passivation dielectric layer: using one layer of 1.0nm of growth in situ in atomic deposition (ALD) equipment
Silica (SiO2) and titanium oxide (TiO2) lamination passivation dielectric layer；
C, polysilicon membrane is prepared: after low pressure chemical deposition (LPCVD) growth of passivation dielectric layer, in same equipment
In, it is 610 DEG C of growths, one layer of 120nm polysilicon membrane in temperature；
D, 4E boron doping: is injected to the polysilicon membrane of entire surface first15atoms/cm2Boron impurities (B)；
E, it anneals: doping boron (B) being activated using 1000 DEG C of temperature, while this high temperature is also achieved to LPCVD life
Long polysilicon membrane carries out crystallization and thermal treatment, further promotes the performance of the film；
F, oxide layer removes: will be removed after annealing in the oxidation of polysilicon surface growth by HF chemical solution；
G, prepare passivation layer: by tubular type plasma reinforced chemical vapour deposition method (PECVD) on polysilicon membrane again
Grow one layer of 40nm passivation layer (silicon nitride layer)；
H, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on the doping of silicon substrate
On the passivation layer (silicon nitride layer) of overlying regions, i.e., Metal contact electrode be located on passivation layer and with doped region opposite position
Place.
Embodiment 6
The structural reference embodiment 2 of solar battery in the present embodiment.
The preparation method of the solar battery, this method are to prepare one layer of super thin oxide layer based on furnace oxidation
(SiO2), the part doping of silicon substrate is main to adulterate realization by local laser.
The preparation method of the solar battery, comprising the following steps:
A, after cleaning to silicon wafer, one layer of phosphorus is grown using low pressure gas phase deposition (APCVD) equipment on silicon substrate surface
Silica glass (PSG)；
B, it laser: is adulterated using the phosphorus (P) that laser scanning carries out selectivity to silicon substrate；
C, low temperature boiler tube growth of passivation dielectric layer: after the oxide layer for removing above-mentioned silicon substrate surface, using chemicals nitre
Acid oxidase grows the silica of one layer of 1.0nm；
D, it prepares polysilicon membrane: depositing one layer in 630 DEG C of plasma reinforced chemical vapour deposition method (PECVD) equipment
70nm polysilicon membrane；
E, phosphorus (P) injection, dopant dose 3E polysilicon doping: are carried out using ion implantation apparatus15atoms/cm2；
F, it anneals: doping phosphorus (P) being activated using 875 DEG C of temperature, while this high temperature is also achieved and grown to LPCVD
Polysilicon membrane carried out crystallization and thermal treatment, further promote the performance of the film；
G, oxide layer removes: will be removed after annealing in the oxide layer of doped polycrystalline silicon film surface growth by HF chemical solution
It goes；
H, silicon nitride is prepared: by tubular type plasma reinforced chemical vapour deposition method (PECVD) in doped polycrystalline silicon film
One layer of 70nm silicon nitride layer of upper regrowth；
I, it prepares electrode: realizing that metal contacts by the way of silk-screen printing, metal is all printed on silicon substrate and locally mixes
On the silicon nitride of miscellaneous overlying regions.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included in protection scope of the present invention.
Claims (10)
1. a kind of solar battery, including silicon substrate (1), it is characterized in that: being equipped with selective doping region in the silicon substrate (1)
(2), the selective doping region (2) includes doped region (21) and undoped region (22), the selective doping region
(2) surface is equipped with passivation dielectric layer (3), and the passivation dielectric layer (3) is equipped with polysilicon membrane (4), in the polycrystalline
Metal contact electrode (5) are equipped on silicon thin film (4) and at position corresponding with the doped region (21).
2. solar battery according to claim 1, it is characterized in that: the polysilicon membrane (4) is that DOPOS doped polycrystalline silicon is thin
Film, the doped region (21) is identical with the doped chemical in doped polycrystalline silicon film, and the doped chemical is boron or phosphorus.
3. solar battery according to claim 1, it is characterized in that: in the doped region (21) doped chemical doping
Concentration is 1.0E18atoms/cm3~1.0E20atoms/cm3, doping depth is 0.1~2 μm.
4. solar battery according to claim 1, it is characterized in that: the doped region (21) and undoped region (22)
It alternates and is distributed in the silicon substrate (1).
5. solar battery according to claim 1, it is characterized in that: the passivation dielectric layer (3) is silica, dioxy
Change a kind of monofilm or several stack membranes in titanium and silicon oxynitride.
6. solar battery according to claim 5, it is characterized in that: the passivation dielectric layer (3) with a thickness of 0.5nm~
2.5nm。
7. solar battery according to claim 1, it is characterized in that: the polysilicon membrane (4) with a thickness of 5nm~
500nm。
8. solar battery according to claim 1-7, it is characterized in that: also being set on the polysilicon membrane (4)
Have passivation layer (6), the Metal contact electrode (5) is located on the passivation layer (6) and corresponding with the doped region (21)
At position.
9. the preparation method of solar battery described in claim 1, it is characterized in that the following steps are included:
S1, silicon substrate (1) is chosen, ion implanting or laser is carried out to the selective doping region (2) on silicon substrate (1) after cleaning
Part doping, forms doped region (21) and undoped region (22)；
After S2, cleaning, passivation dielectric layer (3) are prepared on the surface of selective doping region (2)；
S3, deposited polycrystalline silicon thin film (4) on the surface of passivation dielectric layer (3)；
S4, it is doped and anneals on polysilicon membrane (4) surface, form doped polycrystalline silicon film；
In the oxide layer of doped polycrystalline silicon film surface growth after S5, removal annealing；
S6, setting Metal contact electrode (5) at the doped region (21) position is corresponded on doped polycrystalline silicon film surface.
10. the preparation method of passivation contact solar cell described in claim 1, it is characterized in that the following steps are included:
S1, silicon substrate (1) is chosen, ion implanting, annealing is carried out to the selective doping region (2) on silicon substrate (1) after cleaning
Activation injection atoms at suitable temperatures doping, forms doped region (21) and undoped region (22)；
S2, the oxide layer for removing surface, prepare passivation dielectric layer (3) on the surface of selective doping region (2)；
S3, deposited polycrystalline silicon thin film (4) on the surface of passivation dielectric layer (3)；
S4, it is doped and anneals on polysilicon membrane (4) surface, form doped polycrystalline silicon film；
In the oxide layer of doped polycrystalline silicon film surface growth after S5, removal annealing；
S6, setting Metal contact electrode (5) at the doped region (21) position is corresponded on doped polycrystalline silicon film surface.
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