CN105895738A - Passivated contact N-type solar cell, preparation method, assembly and system - Google Patents
Passivated contact N-type solar cell, preparation method, assembly and system Download PDFInfo
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- CN105895738A CN105895738A CN201610265381.5A CN201610265381A CN105895738A CN 105895738 A CN105895738 A CN 105895738A CN 201610265381 A CN201610265381 A CN 201610265381A CN 105895738 A CN105895738 A CN 105895738A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 74
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 230000005641 tunneling Effects 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 238000002161 passivation Methods 0.000 claims description 76
- 239000011159 matrix material Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 20
- 229910052906 cristobalite Inorganic materials 0.000 claims description 20
- 229910052682 stishovite Inorganic materials 0.000 claims description 20
- 229910052905 tridymite Inorganic materials 0.000 claims description 20
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000006385 ozonation reaction Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000008199 coating composition Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- -1 phosphonium ion Chemical class 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052710 silicon Inorganic materials 0.000 abstract description 30
- 239000010703 silicon Substances 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a passivated contact N-type solar cell, a preparation method, an assembly and a system. The preparation method for a passivated contact N-type solar cell includes the steps of conducting doping treatment for the front surface of an N-type crystalline silicon substrate to form a p+ doped region; preparing a tunneling oxide layer on the back surface of the N-type crystalline silicon substrate, then preparing a phosphorus-containing amorphous silicon layer or phosphorus-containing polysilicon layer on the tunneling oxide layer, and then conducting annealing; and after preparation of passivated anti-reflection film and a passivated film, printing and sintering metal slurry to obtain a front electrode and a back electrode. The beneficial effects of the invention lie in that the tunneling oxide layer can provide the silicon substrate with an excellent surface passivated effect and achieve selective tunneling of carriers, the n+ doped polysilicon layer can effectively transmit the carriers for the metal electrode on the back surface to collect, the back metal electrode does not destroy the passivated layer on the surface of the crystalline silicon substrate, and thus thereby open-circuit voltage of the cell can be greatly increased.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly to one passivation contact N-type solaode
And preparation method and assembly, system.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electrical energy, and its key index is light
Photoelectric transformation efficiency.Many factors can affect photoelectric transformation efficiency, and wherein the passivation quality on silicon substrate surface is one
Individual more crucial factor.Passivation quality is good, and the recombination-rate surface of silicon substrate is low, just can obtain higher
Open-circuit voltage and short circuit current, so the surface passivation of solaode is always in the weight of design and optimization it
Weight.The most common passivating method is at silicon substrate superficial growth passivating film, and common passivating film has SiO2、
SiNx、SiOxNy、Al2O3Deng.On the other hand, in order to collect the electric current that battery produces, it is necessary at silicon substrate
Upper making metal electrode.These metal electrodes need to form Ohmic contact through passivating film and silicon substrate, thus
Inevitably destroy the passivating film below metal electrode.Be in the silicon substrate below metal electrode not only without
Method is passivated, also as there is the highest being combined with directly contacting of metal.Use point contact electrode or class
Can only alleviate to a certain extent like method but this problem cannot be eradicated.
As a example by N-type solaode, the structure of common N-type solaode is p+/N/n+ structure,
Wherein back surface is n+ type doped layer, and it typically uses SiNxOr SiO2/SiNxAs passivation layer, then
Use is burnt type silver slurry and is penetrated passivation layer and silicon formation Ohmic contact.Wherein back metal electrode accounts for face, the back side
Long-pending 5%-8%, this means that and is not covered by a passivation layer more than the silicon face of 5% area, and these
All there is serious metal composite in region.A kind of metal electrode and silicon substrate can be allowed to form good contact,
The novel battery of the integrity of passivating film can be kept again, be the development trend of area of solar cell.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of passivation contact N-type solar-electricity
Pond and preparation method and assembly, system.The preparation method of described passivation contact N-type solaode, can
To keep allowing while passivating film integrity metal electrode and silicon substrate form good contact, thus significantly
Improve the open-circuit voltage of N-type cell, short circuit current and final conversion efficiency, simultaneously and between existing technique
Compatible preferably.
A kind of preparation method being passivated contact N-type solaode that the present invention provides, its technical scheme is:
A kind of preparation method being passivated contact N-type solaode, comprises the following steps:
(1), the front surface of N-type crystalline silicon matrix is doped process, formation p+ doped region；
(2), prepare tunnel oxide at the back surface of N-type crystalline silicon matrix, be prepared by tunnel oxide
Phosphorous amorphous silicon layer or phosphorous polysilicon layer, then make annealing treatment；
(3), prepare passivated reflection reducing membrane at the front surface of N-type crystalline silicon matrix and prepare passivating film at back surface,
Back surface type metal slurry at N-type crystalline silicon matrix forms backplate, at N-type crystalline silicon matrix
Front surface type metal slurry forms front electrode, completes the system of passivation contact N-type solaode after sintering
Standby.
Wherein, in step (1), the method that the front surface of N-type crystalline silicon matrix is doped process is:
Select N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool process；N-type crystalline silicon
The resistivity of matrix is 0.5～15 Ω cm；Then N-type crystalline silicon matrix is put in industrial diffusion furnace system
Matte carries out boron and diffuses to form the p+ doped region of front surface, and boron source uses Boron tribromide, and diffusion temperature is
900-1000 DEG C, the time is 60-180 minute, and the sheet resistance value after boron diffusion is 40-100 Ω/sqr.
Wherein, in step (2), prepare the method for tunneling oxide layer be nitric acid oxidation method, high-temperature thermal oxidation method,
Dry type Ozonation or wet type Ozonation；Described nitric acid oxidation method uses mass concentration to be 40～68%
Salpeter solution, reaction temperature is room temperature, and the time is 5-20min；Described wet type Ozonation is for go
Being passed through ozone in ionized water so that ozone concentration reaches 20-50ppm, reaction temperature is 30-50 DEG C, the time
For 5-20min.
Wherein, in step (2), the method preparing phosphorous polysilicon layer on tunnel oxide is by N-type
Crystalline silicon matrix is put in LPCVD equipment, uses phosphine as doped source, grows on tunnel oxide
Phosphorous polysilicon layer；Or N-type crystalline silicon matrix is put in LPCVD equipment, first at its back surface
Growth intrinsically polysilicon layer, then uses ion implantation device, is injected by phosphonium ion in this polysilicon layer and obtain
Phosphorous polysilicon layer.Wherein, in step (2), the method carrying out making annealing treatment is by N-type crystalline silicon base
Body is put into and is carried out high annealing in annealing furnace, and annealing temperature is 800-950 DEG C, phosphorous amorphous silicon layer or phosphorous many
Crystal silicon layer forms n+ doped polysilicon layer after annealing.
Wherein, in step (3), the preparation method of backplate is: at the back of the body table of N-type crystalline silicon matrix
Face uses silver slurry printed back electrode and dries, and the preparation method of front electrode is: in N-type crystalline silicon
The front surface of matrix uses to be mixed aluminum paste printing front electrode and dries.
Wherein, in step (3), the peak temperature of sintering is 850-950 DEG C
Present invention also offers a kind of passivation contact N-type solaode, including N-type crystalline silicon matrix, institute
The front surface stating N-type crystalline silicon matrix includes p+ doped region the most from inside to outside, front surface passivated reflection reducing
Film and front electrode；The back surface of described N-type crystalline silicon matrix include tunnel oxide the most from inside to outside,
N+ doped polysilicon layer, back surface passivation film and backplate.
Wherein, the thickness of described n+ doped polysilicon layer is more than 100nm.
Wherein, the thickness of described tunnel oxide is 0.5-5nm；Described tunneling oxide layer is SiO2Layer.
Wherein, described backplate is silver backplate, and described front electrode is aerdentalloy front electrode.
Wherein, described passivated reflection reducing membrane is SiO2、SiNxOr Al2O3In deielectric-coating, one or more, described
Passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of described passivated reflection reducing membrane is
70～110nm；The thickness of described passivating film is for being not less than 20nm.
Wherein, described backplate includes back side main grid and back side pair grid, described back side main grid and the described back side
Secondary grid constitute H type grid line, wherein back side main grid width 0.5-3mm, spaced set 3-6 root, back side pair grid
Wide 20-60 μm.Described front electrode includes front main grid and front pair grid, described front main grid and described just
Face pair grid constitute H type grid line, wherein front main grid width 0.5-3mm, spaced set 3-6 root, and front is secondary
Grid width 20-60 μm.
Present invention also offers a kind of passivation contact N-type solar module, including setting the most successively
The front layer material put, encapsulating material, passivation contact N-type solaode, encapsulating material, backsheet,
Described passivation contact N-type solaode is above-mentioned a kind of passivation contact N-type solaode.
Present invention also offers a kind of passivation contact N-type solar cell system, including more than one series connection
Passivation contact N-type solar module, described passivation contact N-type solar module is above-mentioned one
Plant passivation contact N-type solar module.
The enforcement of the present invention includes techniques below effect:
The technological merit of the present invention is mainly reflected in: (1) N-type crystalline silicon matrix back surface is coated with one layer of SiO2
As tunnel oxide, this tunnel oxide can provide excellent surface passivation effect to silicon substrate, simultaneously
N+ doped polysilicon layer above tunnel oxide can be that silicon substrate provides preferable field passivation effect, based on
The passivation contact N-type solaode of this present invention has higher open-circuit voltage and short circuit current；(2) back of the body
Face metal electrode the most directly contacts with matrix silicon, compared to existing technology, does not the most destroy silicon substrate surface
Passivation effect, also reduce the compound of metal and silicon interface；(3) metal electrode and n+ doped polysilicon layer
Between be Ohmic contact, and carry out carrier by tunnel oxide between n+ doped polysilicon layer and silicon substrate
Transmission, so the fill factor, curve factor of battery can't reduce；(4) the biggest to the technique of existing N-type cell
The change of amplitude, is also not changed in including method for metallising and slurry, and battery outward appearance and existing N-type cell do not have
There is any difference.On the basis of existing N-type cell production line, it is only necessary to increasing a LPCVD can be complete
The making of cost passivation contact N-type solaode.For Zong He, the present invention can significantly improve N-type electricity
The open-circuit voltage in pond, short circuit current and final conversion efficiency, the compatibility simultaneously and between existing technique is relatively
Good.
Accompanying drawing explanation
Fig. 1 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step one
Battery structure schematic cross-section.
Fig. 2 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step 3
Battery structure schematic cross-section.
Fig. 3 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step 4
Battery structure schematic cross-section.
Fig. 4 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step 6
Battery structure schematic cross-section.
Fig. 5 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step 7
Battery structure schematic cross-section.
Fig. 6 is that the embodiment of the present invention a kind of is passivated in the preparation method of contact N-type solaode after step 8
Battery structure schematic cross-section.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that retouched
The embodiment stated is intended merely to facilitate the understanding of the present invention, and it does not play any restriction effect.
Embodiment 1
See shown in Fig. 1～Fig. 6, a kind of preparation method being passivated contact N-type solaode of the present embodiment,
Mainly comprise the steps that
(1), the N-type crystalline silicon matrix 10 of 156mm × 156mm is selected, and to N-type crystalline silicon matrix
The front surface of 10 is made making herbs into wool and is processed；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably
1～5 Ω cm；The thickness of N-type crystalline silicon matrix 10 is 50～300 μm, preferably 80～200 μm；Complete this step
Battery structure after Zhou is as shown in Figure 1.
(2) the N-type crystalline silicon matrix 10 after, step (1) being processed is put in industrial diffusion furnace system
Matte carries out boron and diffuses to form the p+ doped region 12 in front, and boron source uses Boron tribromide, and diffusion temperature is
900-1000 DEG C, the time is 60-180 minute.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably 50-70 Ω/
sqr。
(3), the N-type crystalline silicon matrix 10 after boron diffusion is put in etching cleaning machine, remove the back side
The Pyrex layer in diffused layer of boron and front.Complete the battery structure after this step as shown in Figure 2.
(4), the N-type crystalline silicon matrix 10 back surface one layer of tunnel oxide of growth after step (3) processes
Layer 15, during work photo-generated carrier can penetrate tunnel oxide 15 formed conduct, tunnel in the present embodiment
Wearing oxide layer 15 is SiO2Layer.The method of growth tunnel oxide 15 has nitric acid oxidation method, high-temperature thermal oxidation
Method, dry type Ozonation or wet type Ozonation.The present embodiment uses nitric acid oxidation method, and N-type is brilliant
Body silicon substrate 10 is put in the salpeter solution that mass concentration is 68%, and reaction temperature is that room temperature (can be
10～40 DEG C, preferably 20～30 DEG C), the time is 5-20min, and the thickness obtaining tunnel oxide 15 is 0.5-5nm.
Complete the battery structure after this step as shown in Figure 3.
(5), the N-type crystalline silicon matrix 10 after step (4) processes puts into LPCVD equipment (low pressure
Chemical gaseous phase deposits) in, use phosphine as doped source, the tunnel oxide 15 of its back surface grows
Phosphorous polysilicon layer, the thickness of phosphorous polysilicon layer is more than 100nm.The present embodiment can also use
APCVD or PECVD device prepare phosphorous amorphous silicon layer on tunnel oxide.
(6), the N-type crystalline silicon matrix 10 after step (5) processes is put into and is carried out high temperature in annealing furnace and move back
Fire.Annealing temperature is 800-950 DEG C.Phosphorous polysilicon layer or phosphorous amorphous silicon layer form n+ after annealing
Doped polysilicon layer 16.Complete the battery structure after this step as shown in Figure 4.
(7), the front surface growth of passivation antireflective film of the N-type crystalline silicon matrix 10 after step (6) processes
14, at the back surface growth of passivation film 18 of N-type crystalline silicon matrix 10.Passivated reflection reducing membrane 14 is SiO2、
SiNxOr Al2O3In deielectric-coating one or more, its thickness is 70～110nm.The passivating film 18 of back surface
It is SiO2And SiNxThe composite dielectric film of deielectric-coating composition, its thickness is for being not less than 20nm.Complete this step
After battery structure as shown in Figure 5.
(8), the back surface at N-type crystalline silicon matrix 10 uses silver slurry printed back electrode 22 and dries
Dry, the front surface at N-type crystalline silicon matrix 10 uses to be mixed aluminum paste printing front electrode 20 and dries.
Silver is starched and is mixed aluminum paste and all uses model conventional in existing N-type cell technique.Complete the battery after this step
Structure is as shown in Figure 6.
(9) the N-type crystalline silicon matrix 10 after, step (8) being processed transmits and burns into belt sintering stove
Knot, sintering peak temperature is 850-950 DEG C, i.e. completes the preparation of passivation contact N-type solaode.
Embodiment 2
(1), the N-type crystalline silicon matrix 10 of 156mm × 156mm is selected, and to N-type crystalline silicon matrix
The front surface of 10 is made making herbs into wool and is processed；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably
1～5 Ω cm；The thickness of N-type crystalline silicon matrix 10 is 50～300 μm, preferably 80～200 μm；Complete this step
Battery structure after Zhou is as shown in Figure 1.
(2) the N-type crystalline silicon matrix 10 after, step (1) being processed is put in industrial diffusion furnace system
Matte carries out boron and diffuses to form the p+ doped region 12 in front, and boron source uses Boron tribromide, and diffusion temperature is
900-1000 DEG C, the time is 60-180 minute.Sheet resistance value after boron diffusion is 40-100 Ω/sqr, preferably
50-70Ω/sqr。
(3), the N-type crystalline silicon matrix 10 after boron diffusion is put in etching cleaning machine, remove the back side
The Pyrex layer in diffused layer of boron and front.Complete the battery structure after this step as shown in Figure 2.
(4), the N-type crystalline silicon matrix 10 back surface one layer of tunnel oxide of growth after step (3) processes
Layer 15, during work photo-generated carrier can penetrate tunnel oxide 15 formed conduct, tunnel in the present embodiment
Wearing oxide layer 15 is SiO2Layer.The method of growth tunnel oxide 15 has nitric acid oxidation method, high-temperature thermal oxidation
Method, dry type Ozonation and wet type Ozonation.The present embodiment uses wet type Ozonation, by N
Type crystalline silicon matrix 10 is put in deionized water, is passed through ozone the most in deionized water so that ozone concentration
Reaching 20-50ppm, reaction temperature 30-50 DEG C, the time is 5-20min, the tunnel oxide 15 of growth
Thickness is 0.5-5nm.Complete the battery structure after this step as shown in Figure 3.
(5), the N-type crystalline silicon matrix 10 after step (4) processes puts into LPCVD equipment (low pressure
Chemical gaseous phase deposits) in, growing intrinsically polysilicon layer at its back surface, the thickness of polysilicon layer is for being more than
100nm.Then use ion implantation device, phosphonium ion is injected in this polysilicon layer.
(6), the N-type crystalline silicon matrix 10 after step (5) processes is put into and is carried out high temperature in annealing furnace and move back
Fire.Annealing temperature is 800-950 DEG C.Being filled with the polysilicon layer of phosphonium ion, to form n+ doping after annealing many
Crystal silicon layer 16.Complete the battery structure after this step as shown in Figure 4.
(7), the front surface growth of passivation antireflective film of the N-type crystalline silicon matrix 10 after step (6) processes
14, at the back surface growth of passivation film 18 of N-type crystalline silicon matrix 10.Passivated reflection reducing membrane 14 is SiO2、
SiNxOr Al2O3In deielectric-coating one or more, its thickness is 70～110nm.The passivating film 18 of back surface
It is SiO2And SiNxThe composite dielectric film of deielectric-coating composition, its thickness is for being not less than 20nm.Complete this step
After battery structure as shown in Figure 5.
(8), the back surface at N-type crystalline silicon matrix 10 uses silver slurry printed back electrode 22 and dries
Dry, the front surface at N-type crystalline silicon matrix 10 uses to be mixed aluminum paste printing front electrode 20 and dries.
Silver is starched and is mixed aluminum paste and all uses model conventional in existing N-type cell technique.Complete the battery after this step
Structure is as shown in Figure 6.
(9) the N-type crystalline silicon matrix 10 after, step (8) being processed transmits and burns into belt sintering stove
Knot, sintering peak temperature is 850-950 DEG C, i.e. completes the preparation of passivation contact N-type solaode.
The technological merit of the present embodiment is mainly reflected in: (1) N-type crystalline silicon matrix back surface is coated with one layer
SiO2As tunnel oxide, this tunnel oxide can provide excellent surface passivation effect to silicon substrate,
N+ doped polysilicon layer above tunnel oxide can be that silicon substrate provides preferable field passivation effect simultaneously,
Passivation contact N-type solaode based on this present invention has higher open-circuit voltage and short circuit current；(2)
Back metal electrode the most directly contacts with matrix silicon, compared to existing technology, does not the most destroy silica-based body surface
The passivation effect in face, also reduces the compound of metal and silicon interface；(3) metal electrode and n+ DOPOS doped polycrystalline silicon
It is Ohmic contact between Ceng, and carries out current-carrying by tunnel oxide between n+ doped polysilicon layer and silicon substrate
The transmission of son, so the fill factor, curve factor of battery can't reduce；(4) technique of existing N-type cell is not had
Significantly change, be also not changed in including method for metallising and slurry, battery outward appearance and existing N-type cell
There is no any difference.On the basis of existing N-type cell production line, it is only necessary to increase a LPCVD
Complete the making of this passivation contact N-type solaode.For Zong He, the present invention can significantly improve N-type
The open-circuit voltage of battery, short circuit current and final conversion efficiency, the compatibility simultaneously and between existing technique
Preferably.
The present embodiment additionally provides a kind of passivation contact N-type solaode, including N-type crystalline silicon matrix
10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 the most from inside to outside, front surface
Passivated reflection reducing membrane 14 and front electrode 20；The back surface of N-type crystalline silicon matrix 10 includes the most from inside to outside
Tunnel oxide 15, n+ doped polysilicon layer 16, back surface passivation film 18 and backplate 22.N+ mixes
The thickness of miscellaneous polysilicon layer 16 is more than 100nm.The thickness of tunnel oxide 15 is 0.5-5nm；Tunnel oxygen
Changing layer 15 is SiO2Layer.During work photo-generated carrier can penetrate tunnel oxide 15 formed conduct, this
N-type crystalline silicon matrix 10 back surface of embodiment is coated with one layer of SiO2As tunnel oxide, this tunnelling
Oxide layer can provide excellent surface passivation effect, simultaneously the n+ doping above tunnel oxide to silicon substrate
Polysilicon layer can be that silicon substrate provides preferable field passivation effect, passivation based on this present invention contact N-type
Solaode has higher open-circuit voltage and short circuit current；Back metal electrode is the most straight with matrix silicon
Contact, compared to existing technology, does not the most destroy the passivation effect on silicon substrate surface, also reduce metal and
Being combined of silicon interface.
Preferably, backplate 22 is silver backplate, and front electrode 20 is aerdentalloy front electrode.
Passivated reflection reducing membrane 12 is SiO2、SiNxOr Al2O3In deielectric-coating one or more, passivating film 18 is SiO2
And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of passivated reflection reducing membrane is 70～110nm；Passivating film
Thickness is for being not less than 20nm.Backplate 22 includes back side main grid and back side pair grid (not shown),
Back side main grid and back side pair grid constitute H type grid line, wherein back side main grid width 0.5-3mm, spaced set 3-6
Root, back side pair grid width 20-60 μm.Front electrode 20 includes front main grid and front pair grid (not shown),
Front main grid and front pair grid constitute H type grid line, wherein front main grid width 0.5-3mm, spaced set 3-6
Root, front pair grid width 20-60 μm.
The present embodiment additionally provides a kind of passivation contact N-type solar module, including from top to bottom connecting
Front layer material, encapsulating material, passivation contact N-type solaode, encapsulating material, backsheet, blunt
Changing contact N-type solaode is above-mentioned a kind of passivation contact N-type solaode.The present embodiment blunt
The structure and working principle changing contact N-type solar module uses technology well known in the art, and this
The improvement of the passivation contact N-type solar module of bright offer only relates to the above-mentioned passivation contact N-type sun
Other parts are not modified by energy battery.Therefore this specification only to passivation contact N-type solaode and
Its preparation method is described in detail, miscellaneous part and the operation principle to passivation contact N-type solar module
Here repeat no more.Those skilled in the art, in the content basis that this specification describes, can realize this
Bright passivation contact N-type solar module.
The present embodiment additionally provides a kind of passivation contact N-type solar cell system, connects including more than one
Passivation contact N-type solar module, passivation contact N-type solar module be above-mentioned one
Passivation contact N-type solar module.The knot of the passivation contact N-type solar cell system of the present embodiment
Structure and operation principle use technology well known in the art, and the passivation contact N-type solar-electricity that the present invention provides
The improvement of cell system only relates to above-mentioned passivation contact N-type solaode, is not modified other parts.
Therefore passivation contact N-type solaode and preparation method thereof is only described in detail by this specification, to passivation contact
Miscellaneous part and the operation principle of N-type solar cell system repeat no more here.Those skilled in the art exist
In the content basis that this specification describes, the passivation contact N-type solar cell system of the present invention can be realized.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than to this
The restriction of invention protection domain, although having made to explain to the present invention with reference to preferred embodiment, this area
It is to be appreciated by one skilled in the art that technical scheme can be modified or equivalent,
Spirit and scope without deviating from technical solution of the present invention.
Claims (14)
1. the preparation method being passivated contact N-type solaode, it is characterised in that: comprise the following steps:
(1), the front surface of N-type crystalline silicon matrix is doped process, formation p+ doped region；
(2), prepare tunnel oxide at the back surface of N-type crystalline silicon matrix, tunnel oxide is prepared phosphorous amorphous silicon layer or phosphorous polysilicon layer, then makes annealing treatment；
(3), the front surface at N-type crystalline silicon matrix is prepared passivated reflection reducing membrane and prepares passivating film at back surface, back surface type metal slurry at N-type crystalline silicon matrix forms backplate, front surface type metal slurry at N-type crystalline silicon matrix forms front electrode, completes the preparation of passivation contact N-type solaode after sintering.
A kind of preparation method being passivated contact N-type solaode the most according to claim 1, it is characterized in that: in step (1), the method that the front surface of N-type crystalline silicon matrix is doped process is: select N-type crystalline silicon matrix, and the front surface of N-type crystalline silicon matrix is made making herbs into wool processes；The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm；Then N-type crystalline silicon matrix is put in industrial diffusion furnace and making herbs into wool face is carried out boron diffuse to form the p+ doped region of front surface, boron source uses Boron tribromide, diffusion temperature is 900-1000 DEG C, and the time is 60-180 minute, and the sheet resistance value after boron diffusion is 40-100 Ω/sqr.
A kind of preparation method being passivated contact N-type solaode the most according to claim 1, it is characterized in that: in step (2), the method preparing tunneling oxide layer is nitric acid oxidation method, high-temperature thermal oxidation method, dry type Ozonation or wet type Ozonation；The salpeter solution that described nitric acid oxidation method uses mass concentration to be 40～68%, the response time is 5-20min；Described wet type Ozonation is for being passed through ozone in deionized water so that ozone concentration reaches 20-50ppm, and reaction temperature is 30-50 DEG C, and the time is 5-20min.
A kind of preparation method being passivated contact N-type solaode the most according to claim 1, it is characterized in that: in step (2), the method preparing phosphorous polysilicon layer on tunnel oxide is to put in LPCVD equipment by N-type crystalline silicon matrix, use phosphine as doped source, tunnel oxide grows phosphorous polysilicon layer；Or N-type crystalline silicon matrix is put in LPCVD equipment, first grow intrinsically polysilicon layer at its back surface, then use ion implantation device, phosphonium ion is injected this polysilicon layer obtains phosphorous polysilicon layer.
A kind of preparation method being passivated contact N-type solaode the most according to claim 1, it is characterized in that: in step (2), the method carrying out making annealing treatment is to put into N-type crystalline silicon matrix to carry out high annealing in annealing furnace, annealing temperature is 800-950 DEG C, and phosphorous amorphous silicon layer or phosphorous polysilicon layer form n+ doped polysilicon layer after annealing.
6. according to the arbitrary described a kind of preparation method being passivated contact N-type solaode of Claims 1 to 5, it is characterized in that: in step (3), the preparation method of backplate is: the back surface at N-type crystalline silicon matrix uses silver slurry printed back electrode and dries, and the preparation method of front electrode is: the front surface at N-type crystalline silicon matrix uses to be mixed aluminum paste printing front electrode and dries.
7. according to the arbitrary described a kind of preparation method being passivated contact N-type solaode of Claims 1 to 5, it is characterised in that: in step (3), the peak temperature of sintering is 850-950 DEG C.
8. a passivation contact N-type solaode, it is characterised in that: include that N-type crystalline silicon matrix, the front surface of described N-type crystalline silicon matrix include p+ doped region the most from inside to outside, front surface passivated reflection reducing membrane and front electrode；The back surface of described N-type crystalline silicon matrix includes tunnel oxide the most from inside to outside, n+ doped polysilicon layer, back surface passivation film and backplate.
A kind of passivation contact N-type solaode the most according to claim 8, it is characterised in that: the thickness of described n+ doped polysilicon layer is more than 100nm.
A kind of passivation contact N-type solaode the most according to claim 8, it is characterised in that: the thickness of described tunnel oxide is 0.5-5nm；Described tunneling oxide layer is SiO2Layer.
11. according to Claim 8～10 arbitrary described a kind of passivation contact N-type solaodes, it is characterised in that: described backplate is silver backplate, and described front electrode is aerdentalloy front electrode.
12. a kind of passivation contact N-type solaodes according to claim 8, it is characterised in that: described passivated reflection reducing membrane is SiO2、SiNxOr Al2O3In deielectric-coating one or more, described passivating film is SiO2And SiNxThe composite dielectric film of deielectric-coating composition；The thickness of described passivated reflection reducing membrane is 70～110nm；The thickness of described passivating film is for being not less than 20nm.
13. 1 kinds of passivation contact N-type solar modules, including the front layer material from top to bottom set gradually, encapsulating material, passivation contact N-type solaode, encapsulating material, backsheet, it is characterised in that: described passivation contact N-type solaode is the arbitrary described a kind of passivation contact N-type solaode of claim 8-12.
14. 1 kinds of passivation contact N-type solar cell systems, passivation contact N-type solar module including more than one series connection, it is characterised in that: described passivation contact N-type solar module is a kind of passivation contact N-type solar module described in claim 13.
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