CN110459638A - A kind of IBC battery and preparation method thereof of Topcon passivation - Google Patents
A kind of IBC battery and preparation method thereof of Topcon passivation Download PDFInfo
- Publication number
- CN110459638A CN110459638A CN201910486634.5A CN201910486634A CN110459638A CN 110459638 A CN110459638 A CN 110459638A CN 201910486634 A CN201910486634 A CN 201910486634A CN 110459638 A CN110459638 A CN 110459638A
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- crystal silicon
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- 238000002161 passivation Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229920005591 polysilicon Polymers 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000007667 floating Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910486634.5A CN110459638A (en) | 2019-06-05 | 2019-06-05 | A kind of IBC battery and preparation method thereof of Topcon passivation |
Applications Claiming Priority (1)
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CN201910486634.5A CN110459638A (en) | 2019-06-05 | 2019-06-05 | A kind of IBC battery and preparation method thereof of Topcon passivation |
Publications (1)
Publication Number | Publication Date |
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CN110459638A true CN110459638A (en) | 2019-11-15 |
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CN201910486634.5A Pending CN110459638A (en) | 2019-06-05 | 2019-06-05 | A kind of IBC battery and preparation method thereof of Topcon passivation |
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CN (1) | CN110459638A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
CN114464686A (en) * | 2021-12-28 | 2022-05-10 | 浙江爱旭太阳能科技有限公司 | Novel tunneling passivation contact structure battery and preparation method thereof |
CN115020532A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of TBC (thermal conductive barrier coating) battery |
CN115084314A (en) * | 2022-06-10 | 2022-09-20 | 英利能源发展有限公司 | IBC solar cell preparation method of TOPCon passivation contact structure |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101999175A (en) * | 2008-04-09 | 2011-03-30 | 应用材料股份有限公司 | Simplified back contact for polysilicon emitter solar cells |
CN104009118A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | Method for preparing efficient N-type crystalline silicon grooving buried contact battery |
CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
CN106449383A (en) * | 2016-09-28 | 2017-02-22 | 北京金晟阳光科技有限公司 | Planar continuous boron expanding method |
WO2017155393A1 (en) * | 2016-03-07 | 2017-09-14 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
CN108649079A (en) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | Finger-like with passivation contact structures intersects back contacts solar cell and preparation method thereof |
-
2019
- 2019-06-05 CN CN201910486634.5A patent/CN110459638A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101999175A (en) * | 2008-04-09 | 2011-03-30 | 应用材料股份有限公司 | Simplified back contact for polysilicon emitter solar cells |
CN104009118A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | Method for preparing efficient N-type crystalline silicon grooving buried contact battery |
CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
WO2017155393A1 (en) * | 2016-03-07 | 2017-09-14 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
CN106449383A (en) * | 2016-09-28 | 2017-02-22 | 北京金晟阳光科技有限公司 | Planar continuous boron expanding method |
CN108649079A (en) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | Finger-like with passivation contact structures intersects back contacts solar cell and preparation method thereof |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
CN114464686A (en) * | 2021-12-28 | 2022-05-10 | 浙江爱旭太阳能科技有限公司 | Novel tunneling passivation contact structure battery and preparation method thereof |
CN114464686B (en) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | Novel tunneling passivation contact structure battery and preparation method thereof |
CN115020532A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of TBC (thermal conductive barrier coating) battery |
CN115020532B (en) * | 2022-04-30 | 2023-12-22 | 常州时创能源股份有限公司 | Preparation method of TBC battery |
CN115084314A (en) * | 2022-06-10 | 2022-09-20 | 英利能源发展有限公司 | IBC solar cell preparation method of TOPCon passivation contact structure |
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Effective date of registration: 20200819 Address after: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co.,Ltd. Applicant after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant after: Huanghe Hydropower Development Co., Ltd. Address before: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Applicant before: Huanghe Hydropower Development Co., Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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Application publication date: 20191115 |