CN110459638A - A kind of IBC battery and preparation method thereof of Topcon passivation - Google Patents
A kind of IBC battery and preparation method thereof of Topcon passivation Download PDFInfo
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- CN110459638A CN110459638A CN201910486634.5A CN201910486634A CN110459638A CN 110459638 A CN110459638 A CN 110459638A CN 201910486634 A CN201910486634 A CN 201910486634A CN 110459638 A CN110459638 A CN 110459638A
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- 238000002161 passivation Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229920005591 polysilicon Polymers 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000007667 floating Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
It is an object of the invention to disclose a kind of IBC battery and preparation method thereof of Topcon passivation, it includes n type single crystal silicon matrix, front surface P+ doped layer and antireflection layer are disposed in the front of the n type single crystal silicon matrix, the back side of the n type single crystal silicon matrix is provided with silica tunnel layer, the back side of the silica tunnel layer is respectively arranged with N-type polycrystalline silicon doped layer and p-type polysilicon doped layer, the N-type polycrystalline silicon doped layer back side is connected with negative electrode, and the p-type polysilicon doped layer back side is connected with positive electrode；Compared with prior art, by using floating junction (FFE) structure in front surface, the lateral transport channel of few son is formed in front surface, the recombination rate of the few son of battery surface is reduced, reduces the difficulty of practical preparation process；Topcon passivating structure is overleaf formed using ultra-thin silicon dioxide layer and doped polysilicon layer, cell backside can be reduced and lack sub- recombination rate, open-circuit voltage is promoted, and then promote battery conversion efficiency, achieves the object of the present invention.
Description
Technical field
The present invention relates to a kind of IBC battery and preparation method thereof, in particular to the IBC battery of a kind of Topcon passivation and
Preparation method.
Background technique
With the development of economy, social progress, people propose increasingly higher demands to the energy, and solar energy is the mankind
Inexhaustible renewable energy.Solar energy is developed and utilized, the pollution to environment can be greatly reduced, while being people
Class provides sufficient energy, and relative to other new energy such as wind energy, geothermal energy and tide energy, solar energy is high with availability, provides
The advantages that source distribution is extensive and safe and reliable, becomes most promising one of the energy.
Interdigitation back contacts (IBC) solar cell is one of highest industrialization solar cell of current transfer efficiency, the electricity
Pond is using N-shaped monocrystalline silicon as substrate, and p-n junction and metal electrode are all placed in cell backside with interdigital shape, and front hides without electrode
Light, and absorption of the battery to light is improved by surface wool manufacturing and increase antireflection layer, obtain very high short circuit current
And photoelectric conversion efficiency.
The technical solution of existing IBC battery are as follows: cleaning and texturing is carried out to silicon wafer first, then battery front surface is subtracted
Secondly reflection and Passivation Treatment are respectively formed p-type emitter and N-type back surface field (BSF) by mask technique in cell backside,
Finally in cell backside silk-screen printing anode and cathode, cell piece is finally made by high temperature sintering.Wherein cell backside is blunt
Change is realized using silicon nitride or silica, is not superimposed Topcon passivating structure, the passivation effect of cell backside is general, secretly
Saturation current is larger.
It is accordingly required in particular to which a kind of IBC battery and preparation method thereof of Topcon passivation, above-mentioned existing to solve
Problem.
Summary of the invention
The purpose of the present invention is to provide a kind of IBC batteries and preparation method thereof of Topcon passivation, for the prior art
Deficiency, be effectively improved the inactivating performance of cell backside, promote the open-circuit voltage of battery, and it is compound both to have reduced the few son of front surface
Rate also reduces the preparation process difficulty of cell backside emitter and back surface field.
Technical problem solved by the invention can be realized using following technical scheme:
In a first aspect, the present invention provides a kind of IBC battery of Topcon passivation, which is characterized in that it includes n type single crystal silicon
Matrix is disposed with front surface P+ doped layer and antireflection layer in the front of the n type single crystal silicon matrix, in the N-type list
The back side of crystal silicon matrix is provided with silica tunnel layer, and the back side of the silica tunnel layer is respectively arranged with N-type polycrystalline
Silicon doped layer and p-type polysilicon doped layer, the N type doped layer of polysilicon back side are connected with negative electrode, the p-type polysilicon
The doped layer back side is connected with positive electrode.
In one embodiment of the invention, the front surface P+ doped layer with a thickness of 0.1-0.4 μm, sheet resistance after doping
For 100-160 Ω cm.
In one embodiment of the invention, the antireflection layer with a thickness of 60-80nm, refractive index 1.8-2.5.
In one embodiment of the invention, the silica tunnel layer with a thickness of 1-3nm.
In one embodiment of the invention, the N-type polycrystalline silicon doped layer with a thickness of 0.1-0.5 μm, spread rear
Resistance is 80-130 Ω cm, and width is 500-800 μm.
In one embodiment of the invention, the p-type polysilicon doped layer with a thickness of 0.1-0.5 μm, spread rear
Resistance is 80-130 Ω cm, and width is 700-1000 μm.
Second aspect, the present invention provide a kind of preparation method of the IBC battery of Topcon passivation, which is characterized in that including
Following steps:
S1, select n type single crystal silicon piece as matrix, and carry out two-sided making herbs into wool processing, n type single crystal silicon piece with a thickness of 140-
180 μm, resistivity is 1-10 Ω/；
S2, boron diffusion, diffusion temperature 800-1100 are carried out to n type single crystal silicon piece front using low-voltage high-temperature diffusion furnace
DEG C, diffusion time is 10-50 minutes, and the square resistance of P+ doped layer is 100-160 Ω/ after diffusion, and junction depth is 0.1-0.4 μ
m；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using LPCVD equipment n type single crystal silicon piece backside deposition boron-doping polysilicon layer；
S5, using PECVD device in n type single crystal silicon piece front and back sides silicon nitride film, film thickness 40-80nm, refractive index
For 1.8-2.5；
S6, laser slotting is carried out using silicon nitride layer of the laser slotting equipment to N-type region；
S7, using LPCVD equipment n type single crystal silicon piece backside deposition p-doped polysilicon layer；
S8, annealing activation is adulterated at a temperature of 700-1000 DEG C boron and phosphorus；
S9, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece, forms positive electrode and negative electrode；
S10, it is put into sintering furnace and is sintered, sintering temperature is 700-1000 DEG C, is made to obtain the IBC of Topcon passivation
Battery.
The IBC battery and preparation method thereof of Topcon passivation of the invention, compared with prior art, by being adopted in front surface
With floating junction (FFE) structure, the lateral transport channel of few son is formed in front surface, reduces the recombination rate of the few son of battery surface, together
When FFE structure the dimension scale of back side emitter pole and back surface field is required lower, back surface field is settable wider, reduces
The difficulty of practical preparation process；Topcon passivating structure is overleaf formed using ultra-thin silicon dioxide layer and doped polysilicon layer,
Cell backside can be reduced and lack sub- recombination rate, open-circuit voltage is promoted, and then promote battery conversion efficiency, achieve the object of the present invention.
The features of the present invention sees the detailed description of the drawings of the present case and following preferable embodiment and obtains clearly
Solution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the IBC battery that Topcon of the invention is passivated；
Fig. 2 is the flow diagram for the IBC battery preparation method that Topcon of the invention is passivated.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Embodiment
As shown in Figure 1, the IBC battery that Topcon of the invention is passivated, it includes n type single crystal silicon matrix 1, in N-type monocrystalline
The front of silicon substrate 1 is disposed with front surface P+ doped layer 2 and antireflection layer 3, is arranged at the back side of N type single crystal silicon substrate 1
There is silica tunnel layer 4, the back side of silica tunnel layer 4 is respectively arranged with N-type polycrystalline silicon doped layer 5 and p-type polysilicon
Doped layer 6,5 back side of N-type polycrystalline silicon doped layer are connected with negative electrode 8, and 6 back side of p-type polysilicon doped layer is connected with positive electrode 7.
In the present embodiment, front surface P+ doped layer 2 with a thickness of 0.1-0.4 μm, after doping sheet resistance be 100-160 Ω
cm.Antireflection layer 3 with a thickness of 60-80nm, refractive index 1.8-2.5.Silica tunnel layer 4 with a thickness of 1-3nm.
In the present embodiment, N-type polycrystalline silicon doped layer 5 with a thickness of 0.1-0.5 μm, after diffusion sheet resistance be 80-130 Ω
Cm, width are 500-800 μm.P-type polysilicon doped layer 6 with a thickness of 0.1-0.5 μm, after diffusion sheet resistance be 80-130 Ω cm,
Width is 700-1000 μm.
As shown in Fig. 2, the preparation method for the IBC battery that Topcon of the invention is passivated, includes the following steps:
S1, select n type single crystal silicon piece as matrix, and carry out two-sided making herbs into wool processing, n type single crystal silicon piece with a thickness of 140-
180 μm, resistivity is 1-10 Ω/；
S2, boron diffusion, diffusion temperature 800-1100 are carried out to n type single crystal silicon piece front using low-voltage high-temperature diffusion furnace
DEG C, diffusion time is 10-50 minutes, and the square resistance of P+ doped layer is 100-160 Ω/ after diffusion, and junction depth is 0.1-0.4 μ
m；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using LPCVD equipment n type single crystal silicon piece backside deposition boron-doping polysilicon layer；
S5, using PECVD device in n type single crystal silicon piece front and back sides silicon nitride film, film thickness 40-80nm, refractive index
For 1.8-2.5；
S6, laser slotting is carried out using silicon nitride layer of the laser slotting equipment to N-type region；
S7, using LPCVD equipment n type single crystal silicon piece backside deposition p-doped polysilicon layer；
S8, annealing activation is adulterated at a temperature of 700-1000 DEG C boron and phosphorus；
S9, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece, forms positive electrode and negative electrode；
S10, it is put into sintering furnace and is sintered, sintering temperature is 700-1000 DEG C, is made to obtain the IBC of Topcon passivation
Battery.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (7)
1. a kind of IBC battery of Topcon passivation, which is characterized in that it includes n type single crystal silicon matrix, in the n type single crystal silicon
The front of matrix is disposed with front surface P+ doped layer and antireflection layer, is provided at the back side of the n type single crystal silicon matrix
The back side of silica tunnel layer, the silica tunnel layer is respectively arranged with N-type polycrystalline silicon doped layer and p-type polysilicon is mixed
Diamicton, the N-type polycrystalline silicon doped layer back side are connected with negative electrode, and the p-type polysilicon doped layer back side is connected with positive electrode.
2. the IBC battery of Topcon passivation as described in claim 1, which is characterized in that the thickness of the front surface P+ doped layer
Degree is 0.1-0.4 μm, and sheet resistance is 100-160 Ω cm after doping.
3. the IBC battery of Topcon as described in claim 1 passivation, which is characterized in that the antireflection layer with a thickness of 60-
80nm, refractive index 1.8-2.5.
4. the IBC battery of Topcon passivation as described in claim 1, which is characterized in that the thickness of the silica tunnel layer
Degree is 1-3nm.
5. the IBC battery of Topcon passivation as described in claim 1, which is characterized in that the thickness of the N-type polycrystalline silicon doped layer
Degree is 0.1-0.5 μm, and sheet resistance is 80-130 Ω cm after diffusion, and width is 500-800 μm.
6. the IBC battery of Topcon passivation as described in claim 1, which is characterized in that the thickness of the p-type polysilicon doped layer
Degree is 0.1-0.5 μm, and sheet resistance is 80-130 Ω cm after diffusion, and width is 700-1000 μm.
7. a kind of preparation method of the IBC battery of Topcon passivation, which comprises the steps of:
S1, select n type single crystal silicon piece as matrix, and carry out two-sided making herbs into wool processing, n type single crystal silicon piece with a thickness of 140-180 μ
M, resistivity are 1-10 Ω/；
S2, boron diffusion is carried out to n type single crystal silicon piece front using low-voltage high-temperature diffusion furnace, diffusion temperature is 800-1100 DEG C, is expanded
Dissipating the time is 10-50 minutes, and the square resistance of P+ doped layer is 100-160 Ω/ after diffusion, and junction depth is 0.1-0.4 μm；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using LPCVD equipment n type single crystal silicon piece backside deposition boron-doping polysilicon layer；
S5, using PECVD device in n type single crystal silicon piece front and back sides silicon nitride film, film thickness 40-80nm, refractive index is
1.8-2.5；
S6, laser slotting is carried out using silicon nitride layer of the laser slotting equipment to N-type region；
S7, using LPCVD equipment n type single crystal silicon piece backside deposition p-doped polysilicon layer；
S8, annealing activation is adulterated at a temperature of 700-1000 DEG C boron and phosphorus；
S9, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece, forms positive electrode and negative electrode；
S10, it is put into sintering furnace and is sintered, sintering temperature is 700-1000 DEG C, is made to obtain the IBC battery of Topcon passivation.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
| CN114464686A (en) * | 2021-12-28 | 2022-05-10 | 浙江爱旭太阳能科技有限公司 | Novel tunneling passivation contact structure battery and preparation method thereof |
| CN115020532A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of TBC (thermal conductive barrier coating) battery |
| CN115084314A (en) * | 2022-06-10 | 2022-09-20 | 英利能源发展有限公司 | IBC solar cell preparation method of TOPCon passivation contact structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999175A (en) * | 2008-04-09 | 2011-03-30 | 应用材料股份有限公司 | Simplified back contact for polysilicon emitter solar cells |
| CN104009118A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Method for preparing efficient N-type crystalline silicon grooving buried contact battery |
| CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
| CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
| CN106449383A (en) * | 2016-09-28 | 2017-02-22 | 北京金晟阳光科技有限公司 | Planar continuous boron expanding method |
| WO2017155393A1 (en) * | 2016-03-07 | 2017-09-14 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
| CN108649079A (en) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | Finger-like with passivation contact structures intersects back contacts solar cell and preparation method thereof |
-
2019
- 2019-06-05 CN CN201910486634.5A patent/CN110459638A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999175A (en) * | 2008-04-09 | 2011-03-30 | 应用材料股份有限公司 | Simplified back contact for polysilicon emitter solar cells |
| CN104009118A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Method for preparing efficient N-type crystalline silicon grooving buried contact battery |
| CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
| CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
| WO2017155393A1 (en) * | 2016-03-07 | 2017-09-14 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
| CN106449383A (en) * | 2016-09-28 | 2017-02-22 | 北京金晟阳光科技有限公司 | Planar continuous boron expanding method |
| CN108649079A (en) * | 2018-07-11 | 2018-10-12 | 泰州隆基乐叶光伏科技有限公司 | Finger-like with passivation contact structures intersects back contacts solar cell and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN113659033A (en) * | 2021-07-08 | 2021-11-16 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact solar cell |
| CN114464686A (en) * | 2021-12-28 | 2022-05-10 | 浙江爱旭太阳能科技有限公司 | Novel tunneling passivation contact structure battery and preparation method thereof |
| CN115020532A (en) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | Preparation method of TBC (thermal conductive barrier coating) battery |
| CN115020532B (en) * | 2022-04-30 | 2023-12-22 | 常州时创能源股份有限公司 | Preparation method of TBC battery |
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